CN205786303U - A kind of condenser type infrared gas sensor based on MEMS - Google Patents

A kind of condenser type infrared gas sensor based on MEMS Download PDF

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Publication number
CN205786303U
CN205786303U CN201620455500.9U CN201620455500U CN205786303U CN 205786303 U CN205786303 U CN 205786303U CN 201620455500 U CN201620455500 U CN 201620455500U CN 205786303 U CN205786303 U CN 205786303U
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infrared
mems
air chamber
optical filter
signal
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顾芳
孙亚飞
张加宏
李敏
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Nanjing University of Information Science and Technology
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Nanjing University of Information Science and Technology
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Abstract

A kind of condenser type infrared gas sensor based on MEMS, this sensor is arranged in an array manner, measures CO, CH by the change of infrared light intensity under relative analysis specific wavelength4、SO2Concentration, and use electric capacity as sensing element.In addition, solar radiation detection technique suffers from significance at monitoring synoptic climate situation, prediction future weather, agricultural production, solar energy development etc., the loss of atmospheric ozone layer, the solar ultraviolet being irradiated to ground strengthens so that people increasingly pay close attention to the change of solar radiation.The sensor of this utility model design, also with a convenient system, may be used for solar radiation quantity detection.This utility model uses electric capacity as sensing element, and temperature drift is low, precision is high.

Description

A kind of based on MEMS Condenser type infrared gas sensor
Technical field
This utility model belongs to microelectromechanical systems (MEMS) sensor design technical field, is specifically related to a kind of condenser type infrared gas sensor based on MEMS.
Background technology
Gas detection technology is more and more extensive in the range of application of daily life and production, is specifically focused on the aspects such as mine exploration, air monitoring, chemical industry monitoring, wastewater treatment equipment.Mine exploration includes exploring stone oil and gas, transporting, store and refine, all can produce the most inflammable and toxic gas, so gas detecting is often applied in occasions such as exploration drilling, production platform, coal gas terminals.Nowadays air pollution is serious, and gas detection technology can monitor the air quality index of environment for human survival timely and accurately, and provides urban air pollution situation to forecast;Chemical plant is one of user of gas detection devices maximum, in its production process, can produce inflammability miscellaneous and poisonous gas, so gas detection technology is often used in process island, laboratory etc.;Wastewater treatment equipment is typical in a lot of cities and small towns, and containing toxic gas in sewage, it can be controlled by gas detection technology.
Current gas detection technology depends on gas sensor to be carried out, and gas sensor can be roughly divided into semiconductor gas sensor, electrochemical gas sensor, solid-state electrolyte gas sensor, catalytic combustion method gas sensor, optical gas sensor etc. according to gas sensitive and operation principle difference.Semiconductor gas sensor have with low cost, be simple to manufacture, the advantage such as highly sensitive, fast response time, life-span length, and circuit low to humidity sensitive are simple, but it must at high temperature work, poor stability, power are high;Electrochemical gas sensor is divided into primary cell type and the controlled potential electrolysis formula of needs power supply being not required to power supply, many toxic gas and oxygen can be detected, major advantage is the high sensitivity of gas and good selectivity, and weak point is that the life-span is short, generally 2 years.Solid electrolyte gas sensor is a kind of gas sensor between quasiconductor and electrochemistry, and its selectivity and sensitivity are all higher than quasiconductor, and last a long time, therefore, it is possible to be applied to a lot of aspect, its shortcoming is in response to overlong time.Catalytic combustion type sensor belongs to high-temperature gas sensors, advantage is that simple in construction, manufacturing cost are low, sensor output is not affected by steam, the humiture of environment is affected insensitive, its shortcoming is that life-span ratio is relatively low, operating temperature higher (internal up to 700 DEG C~800 DEG C), detects indicated value error bigger under anaerobic environment.Optical type gas sensor is mainly based on infrared absorption type, owing to gas with various is different to infrared waves degree of absorption, is the most all to carry out detected gas concentration by measurement infrared absorption wavelength.
Saying on the whole, infrared gas sensor has the advantages such as length in service life, cost performance height, good stability compared with other classification gas sensors, but infrared gas sensor in the market generally exists temperature drift problems.The electrical parameter that can cause transistor or inductive reactance etc. during variation of ambient temperature changes, and causes the instability of quiescent point, makes circuit dynamic parameter unstable and causes error, and even resulting in circuit cannot normally work.On the other hand, these traditional sensors be difficult to integrated, cost is the highest, causing cannot perfect market.So market more needs technology maturation, with low cost, more practical gas sensor, condenser type infrared gas sensor based on MEMS is exactly a kind of sensor technology that disclosure satisfy that above-mentioned requirements, and its advantage is that volume is little, low in energy consumption, performance is good, fast response time.
Utility model content
This utility model for deficiency of the prior art, solves that temperature drift is serious, function singleness, is difficult to problem integrated, that cost is high, it is provided that a kind of condenser type infrared gas sensor based on MEMS.
For achieving the above object, this utility model is by the following technical solutions:
A kind of condenser type infrared gas sensor based on MEMS, it is characterised in that including: DC source, sensing probe, signal conditioning circuit and the signal processing circuit being sequentially connected with;Described sensing probe includes MEMS infrared light supply, air chamber to be measured, reference air chamber, infrared filtering chip arrays and Infrared Detection Array;Described air chamber to be measured and reference air chamber form bilateral symmetry, sidewall is provided with insulation and thermal insulation plate, top all connects with MEMS infrared light supply, bottom all connects with infrared filtering chip arrays, wherein said air chamber to be measured is provided with air inlet and venthole, for communicating with gaseous environment to be measured, described reference air chamber is enclosed construction, interior Feng Youyi atmospheric pressure, calibrating gas without gas to be measured;Described MEMS infrared light supply is after it is energized by DC source, to air chamber to be measured and reference air chamber irradiating infrared light, infrared light is each passed through air chamber to be measured and reference air chamber, by infrared filtering chip arrays outgoing, the infrared light of outgoing is detected by Infrared Detection Array, send detectable signal to signal conditioning circuit to nurse one's health, then export data through signal processing circuit.
For optimizing technique scheme, the concrete measure taked also includes:
Described MEMS infrared light supply is integrated polysilicon resistance bar on a silicon substrate.
Described MEMS infrared light supply includes that fixed structure and rotational structure, described fixed structure are fixedly mounted on reference plenum roof, and described rotational structure is rotatably installed in plenum roof to be measured by swingle.
Described Infrared Detection Array is arranged on bottom infrared filtering chip arrays, Infrared Detection Array includes sealed air-space, charge valve, boron-doping electrode and inductance capacitance, multiple sealed air-space is formed between boron-doping electrode and infrared filtering chip arrays, sealed air-space is controlled the turnover of gas by charge valve, sealed air-space is entered from the infrared light of infrared filtering chip arrays outgoing, by the GAS ABSORPTION in sealed air-space, it is heated so that sealed air-space expands, thus extrude boron-doping electrode and deform upon so that the inductance capacitance size connected with boron-doping electrode changes.
Described infrared filtering chip arrays is made up of the filter arrays being embedded in light heat-insulating shield, and described optical filter includes CO optical filter, CH4Optical filter and SO2Optical filter, is respectively used to absorb at CO, CH4And SO2The light of the infrared absorption peak wave band of gas, described CO optical filter, CH4Optical filter and SO2Optical filter corresponds respectively to different sealed air-spaces, infrared light through after air chamber to be measured and reference air chamber respectively from CO optical filter, CH4Optical filter and SO2Optical filter outgoing, enters corresponding each sealed air-space.
Described signal conditioning circuit includes signal amplifier, traffic filter and the power amplifier being sequentially connected with, and also includes the optical coupling isolator for interference signal carries out isolation processing.
Described signal processing circuit includes ADC transducer, signal isolator, single-chip microcomputer, LDO linear power supply and USB, the signal nursed one's health through signal conditioning circuit is converted to digital signal by ADC transducer, single-chip microcomputer is inputted through signal isolator, and exporting final data by USB interface, described LDO linear power supply is for powering to signal isolator and single-chip microcomputer.
Described signal isolator includes optical coupling isolator and magnetic coupling isolator.
A kind of based on MEMS the condenser type infrared gas sensor that the utility model proposes, on the one hand, the amount of radiation of fixing MEMS infrared light supply, by causing after measuring gas heat absorption expansion, sensor chip capacitance variations is counter pushes away gas concentration;On the other hand, remove heating resistor stripe radiation appliance, directly accept solar radiation and irradiate, seal gas heat absorption expand that the capacitance variations that causes is counter pushes away amount of radiation size by measuring.
As can be seen from the above technical solutions, this utility model has the advantages that
(1) utilize the infrared absorption spectra analysis gas concentration of gas, the means of infrared spectrum analysis are combined with MEMS technology, there is the features such as fast response time, highly sensitive, life-span length, volume are little;
(2) taking the form of array, the intensity difference of relative analysis multiple characteristic wavelength infrared light calculates the concentration of multiple gases, and integration degree is high;
(3) using reference air chamber structure, utilize series capacitance as sensing element, effectively inhibit the impact that the change of temperature brings, measurement result is the most accurate, and application series capacitance, alleviates the very complicated of connection;
(4) technique is simple, low cost, compatible with CMOS technology, can by the detection of signal, nurse one's health and process circuit and integrate, coincidence senser miniaturization, array, intelligentized development trend;
(5) in solar radiation context of detection, simple in construction, it is easy to operation, effectively realize measuring in real time.
Accompanying drawing explanation
Fig. 1 is the longitudinal sectional view of this utility model sensing probe.
Fig. 2 is the partial schematic diagram of this utility model sensing probe.
Fig. 3 is the schematic diagram of this utility model signal conditioning circuit and signal processing circuit.
Fig. 4 is preparation flow figure of the present utility model.
Reference is as follows: MEMS infrared light supply 1, fixed structure 11, rotational structure 12, swingle 13, air chamber to be measured 2, air inlet 21, venthole 22, reference air chamber 3, insulation and thermal insulation plate 4, infrared filtering chip arrays 5, every light heat-insulating shield 51, optical filter 52, Infrared Detection Array 6, sealed air-space 61, charge valve 62, silicon substrate 63, boron-doping electrode 64, trace layer 65, lead-in wire 66, aluminum electrode 67, glass substrate 68.
Detailed description of the invention
Describe this utility model below in conjunction with the accompanying drawings in detail.
A kind of based on MEMS the condenser type infrared gas sensor that the utility model proposes, including the DC source being sequentially connected with, sensing probe, signal conditioning circuit and signal processing circuit.
As it is shown in figure 1, sensing probe includes MEMS infrared light supply 1, air chamber to be measured 2, reference air chamber 3, infrared filtering chip arrays 5 and Infrared Detection Array 6.MEMS infrared light supply 1 can be integrated in the polysilicon resistance bar on silicon substrate, and after resistor stripe passes to electric current, owing to temperature raises, to external radiation wide range infrared light, its wave-length coverage, in 1 ~ 20 μm, meets the instrument needs to infrared light wave-length coverage.Air chamber 2 to be measured and reference air chamber 3 are symmetrical structure, and size is identical, and structure is similar, and sidewall is made up of insulation and thermal insulation plate 4, and air chamber 2 the most to be measured is open architecture, and front end is provided with air inlet 21, and back is provided with venthole 22, is communicated with gaseous environment to be measured by air inlet/outlet;Reference air chamber 3 is enclosed construction, the calibrating gas of interior one atmospheric pressure of envelope, without gas componant to be measured in calibrating gas.MEMS infrared light supply 1 is arranged on the top of two air chambers, the infrared light supply participating in air chamber 3 correspondence is fixed structure 11, the infrared light supply of air chamber 2 correspondence to be measured is rotational structure 12, can be rotated around fixed structure 11 by swingle 13, and air chamber 2 to be measured plays an effect opened and closed.Infrared filtering chip arrays 5 is separately mounted to the bottom of two air chambers, directly the MEMS infrared light supply 1 to top.
MEMS infrared light supply 1 is the outside irradiating infrared light of meeting after DC source passes to electric current, respectively enters air chamber 2 to be measured and reference air chamber 3.After infrared light is each passed through air chamber 2 to be measured and reference air chamber 3, by entering in an array manner in sealed air-space 61 after infrared filtering chip arrays 5.The exit end of infrared filtering chip arrays 5 is corresponding with sealed air-space 61 respectively.Optical filter bottom air chamber 2 to be measured is identical with the optical filter bottom reference air chamber 3, and corresponding several different optical filters in same air chamber, filter arrays as shown in Figure 2, from front end to rear end, first row is CO optical filter, and second row is CH4Optical filter, the 3rd row is SO2Optical filter, CO optical filter have chosen CO absworption peak 4.65 μm at infrared band, CH4Optical filter have chosen CH4At two absworption peak 2.4 μm, 3.3 μm of infrared band, SO2Optical filter have chosen SO2Two absworption peak 7.45 μm, 8.7 μm in infrared band.Wherein, the corresponding sealed air-space of the exit end of CO optical filter, CH4Optical filter exit end a corresponding sealed air-space, SO jointly2An optical filter exit end corresponding sealed air-space jointly.
As CO, CH of measuring known variable concentrations4、SO2During gas (gas for demarcating), the rotational structure 12 at air chamber 2 top to be measured is closed, sensor is positioned in known gas and switches on power, pass through air inlet/outlet, making to be full of in air chamber 2 to be measured gas to be measured, the infrared light that MEMS infrared light supply 1 sends passes air chamber 2 to be measured, is absorbed by the mixed gas in air chamber 2 to be measured when through air chamber 2 to be measured, light intensity is changed, and at CO, CH4、SO2The absworption peak wave band light intensity change of gas is particularly evident, enter in each corresponding sealed air-space 61 after optical filter 52 outgoing by different absorbing wavelength, by the corresponding GAS ABSORPTION in sealed air-space 61, it is heated and sealed air-space 61 can be made to expand, thus bottom crush seal air cavity 61, make its boron-doping electrode 64 deform upon, cause the size of the inductance capacitance being in series with it to change.
As shown in Figure 3, signal condition is carried out by amplifying the circuit such as filtering, and capacitance signal is converted to digital signal by ADC transducer, accepted by single-chip microcomputer again and process, and export final data by USB interface, in order to eliminate the impact of the undesirable element that power supply is unstable, modulus signal interferes, signal isolator uses optical coupling isolator and ADuM5401 magnetic coupling isolator to carry out disturbing the isolation processing of signal.The infrared light that MEMS infrared light supply 1 sends passes air chamber 2 to be measured, owing to reference air chamber 3 entirety is to seal, it it is the calibrating gas of an atmospheric pressure inside it, without gas to be measured, it shines the light intensity in sealed air-space 61 and will not change, and the change that its series capacitance occurs also is the most constant, by circuit is carried out signal condition, and capacitance signal is converted to digital signal by ADC transducer, this signal contains the common-mode signal measuring environment, the impact of such as ambient temperature.Wherein, a/d converter can use AD7745, and single-chip microcomputer can use STM32.
The digital signal contrast that the digital signal obtained by air chamber 2 to be measured and reference air chamber 3 obtain, obtains eliminating the size of the digital signal change of the common-mode signal impacts such as temperature drift, obtains about CO, CH according to the size of digital signal change after difference processing4、SO2Matched curve relation between gas concentration (marked gas) and digital signal change size.
When carrying out the detection of unknown gas concentration, calibrated sensor is positioned in gas to be measured and switches on power, pass through air inlet/outlet, make air chamber 2 to be measured is full of gas to be measured, the infrared light that MEMS infrared light supply 1 sends passes air chamber 2 to be measured, by the GAS ABSORPTION in air chamber 2 to be measured when through air chamber 2 to be measured, then enter in sealed air-space 61, by corresponding CO, CH in sealed air-space 61 by after infrared filtering chip arrays 5 outgoing4、SO2GAS ABSORPTION, it is heated and sealed air-space can be made to expand, thus bottom crush seal air cavity, make boron-doping electrode deform upon, the size causing the inductance capacitance being in series with it changes, signal condition is carried out by signal conditioning circuit, and capacitance signal is converted to digital signal by ADC transducer, then calculate the concentration of gas in air chamber 2 to be measured according to the size of digital signal change.
Gas sensor the most of the present utility model is also equipped with the function of solar radiation measurement.By the rotational structure 12 of air chamber 2 correspondence to be measured by swingle 13 rotated away, and by sensor just to sunlight so that sunlight can shine directly on infrared filtering chip arrays 5, includes CO, CH in solar radiation4、SO2Gas absorption spectra, due to CO, CH in sealed air-space 614、SO2Gas content is constant, solar radiation quantity is different, corresponding spectrum is expanded also different by the rotating jet flow after each GAS ABSORPTION, and then cause boron-doping electrode 64 deformation different, the size of final inductance capacitance there is also notable difference, and so capacitance size according to calibrated gas sensor can measure the size of solar radiation quantity.The size accuracy utilizing three kinds of gas with various to carry out comprehensively measuring and calculating solar radiation quantity in this utility model is higher, and stability is more preferable, and additionally reference air chamber 3 can also reject the interference of the common-mode signals such as ambient temperature so that final solar radiation quantity measurement accuracy is higher.
As shown in Figure 4, the preparation method of condenser type infrared gas sensor based on MEMS, comprise the following steps:
Step one: clean p type single crystal silicon substrate, then go out one layer of SiO at the equal thermal oxide growth of its end face and bottom surface2, as shown in Figure 4 (a);
Step 2: at bottom surface SiO2Photoresist is coated in the Part I region on layer surface, then does wet etching with HF solution, and the SiO at uncoated photoresist position is removed in drift2, as shown in Figure 4 (b);
Step 3: carry out boron ion implanting at exposed silicon substrate position, injecting the degree of depth is 0.5 ~ 1.5 μm, forms doping dense borosilicate layer, i.e. boron-doping electrode 64, as shown in Figure 4 (c);
Step 4: at end face SiO2Photoresist is coated in the Part II region on layer surface, and Part II region is vertically opposite with Part I region answers, and removes the SiO at uncoated photoresist position by RIE reactive ion etching method2, then by the alkaline hydrogen exposed P-type silicon out of potassium oxide caustic anisotropic etch, until boron-doping electrode 64 i.e. stops corrosion, obtain multiple silicon hole that the degree of depth is 0.25 ~ 0.35mm, then remove residue photoresist, the SiO to two ends, end face left and right residual2Layer punches, the corresponding hole in each silicon hole, accesses charge valve 62, for being filled with and seal different detected gas, as shown in Fig. 4 (d);
Step 5: etching glass substrate 68, top surface of glass after etching is coated photoresist, is formed litho pattern, at litho pattern surface aluminium coat thin film, use stripping technology (Lift-off), remove photoresist and unwanted aluminum thin film, form aluminum electrode 67, as shown in Fig. 4 (e);
Step 6: go between at aluminum electrode 67, and the trace layer 65 from the two ends, end face left and right being arranged on glass substrate 68 draws, again by together with relative with the bottom surface of silicon substrate 63 for the end face of the glass substrate 68 with aluminum electrode 67 obtained in step 5 being bonded to, form plate condenser, would be embedded with optical filter 52 every light heat-insulating shield 51 is relative with silicon substrate 63 end face be bonded to together with, form sealed air-space 61, sealed air-space 61 is inflated, sealed air-space corresponding to CO optical filter is filled with CO gas, corresponding CH4The sealed air-space of optical filter is filled with CH4Gas, corresponding SO2The sealed air-space of optical filter is filled with SO2Gas, as shown in Fig. 4 (f).
Below being only preferred implementation of the present utility model, protection domain of the present utility model is not limited merely to above-described embodiment, and all technical schemes belonged under this utility model thinking belong to protection domain of the present utility model.It should be pointed out that, for those skilled in the art, without departing from the some improvements and modifications under this utility model principle premise, should be regarded as protection domain of the present utility model.

Claims (8)

1. a condenser type infrared gas sensor based on MEMS, it is characterised in that including: DC source, sensing probe, signal conditioning circuit and the signal processing circuit being sequentially connected with;Described sensing probe includes MEMS infrared light supply (1), air chamber to be measured (2), reference air chamber (3), infrared filtering chip arrays (5) and Infrared Detection Array (6);Described air chamber to be measured (2) and reference air chamber (3) form bilateral symmetry, sidewall is provided with insulation and thermal insulation plate (4), top all connects with MEMS infrared light supply (1), bottom all connects with infrared filtering chip arrays (5), wherein said air chamber to be measured (2) is provided with air inlet (21) and venthole (22), for communicating with gaseous environment to be measured, described reference air chamber (3) is enclosed construction, interior Feng Youyi atmospheric pressure, calibrating gas without gas to be measured;Described MEMS infrared light supply (1) is after it is energized by DC source, to air chamber to be measured (2) and reference air chamber (3) irradiating infrared light, infrared light is each passed through air chamber to be measured (2) and reference air chamber (3), by infrared filtering chip arrays (5) outgoing, the infrared light of outgoing is detected by Infrared Detection Array (6), send detectable signal to signal conditioning circuit to nurse one's health, then export data through signal processing circuit.
A kind of condenser type infrared gas sensor based on MEMS, it is characterised in that: described MEMS infrared light supply (1) is integrated polysilicon resistance bar on a silicon substrate.
A kind of condenser type infrared gas sensor based on MEMS, it is characterized in that: described MEMS infrared light supply (1) includes fixed structure (11) and rotational structure (12), described fixed structure (11) is fixedly mounted on reference air chamber (9) top, and described rotational structure (12) is rotatably installed in air chamber to be measured (2) top by swingle (13).
nullA kind of condenser type infrared gas sensor based on MEMS,It is characterized in that: described Infrared Detection Array (6) is arranged on infrared filtering chip arrays (5) bottom,Infrared Detection Array (6) includes sealed air-space (61)、Charge valve (62)、Boron-doping electrode (64) and inductance capacitance,Multiple sealed air-space (61) is formed between boron-doping electrode (64) and infrared filtering chip arrays (5),Sealed air-space (61) is controlled the turnover of gas by charge valve (62),Sealed air-space (61) is entered from the infrared light of infrared filtering chip arrays (5) outgoing,By the GAS ABSORPTION in sealed air-space (61),It is heated so that sealed air-space (61) expands,Thus extrude boron-doping electrode (64) and deform upon,The inductance capacitance size connected with boron-doping electrode (64) is changed.
A kind of condenser type infrared gas sensor based on MEMS, it is characterized in that: described infrared filtering chip arrays (5) is made up of optical filter (52) array being embedded in light heat-insulating shield (51), and described optical filter (52) includes CO optical filter, CH4Optical filter and SO2Optical filter, is respectively used to absorb at CO, CH4And SO2The light of the infrared absorption peak wave band of gas, described CO optical filter, CH4Optical filter and SO2Optical filter corresponds respectively to different sealed air-spaces (61), infrared light through after air chamber to be measured (2) and reference air chamber (3) respectively from CO optical filter, CH4Optical filter and SO2Optical filter outgoing, enters corresponding each sealed air-space (61).
A kind of condenser type infrared gas sensor based on MEMS, it is characterized in that: described signal conditioning circuit includes signal amplifier, traffic filter and the power amplifier being sequentially connected with, also including the optical coupling isolator for interference signal being carried out isolation processing.
A kind of condenser type infrared gas sensor based on MEMS, it is characterized in that: described signal processing circuit includes ADC transducer, signal isolator, single-chip microcomputer, LDO linear power supply and USB, the signal nursed one's health through signal conditioning circuit is converted to digital signal by ADC transducer, single-chip microcomputer is inputted through signal isolator, and exporting final data by USB interface, described LDO linear power supply is for powering to signal isolator and single-chip microcomputer.
A kind of condenser type infrared gas sensor based on MEMS, it is characterised in that: described signal isolator includes optical coupling isolator and magnetic coupling isolator.
CN201620455500.9U 2016-05-18 2016-05-18 A kind of condenser type infrared gas sensor based on MEMS Expired - Fee Related CN205786303U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105823749A (en) * 2016-05-18 2016-08-03 南京信息工程大学 Capacitor type infrared gas sensor based on MEMS and preparing method of capacitor type infrared gas sensor
CN112649386A (en) * 2019-10-11 2021-04-13 迈来芯科技有限公司 Gas sensor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105823749A (en) * 2016-05-18 2016-08-03 南京信息工程大学 Capacitor type infrared gas sensor based on MEMS and preparing method of capacitor type infrared gas sensor
CN105823749B (en) * 2016-05-18 2019-04-23 南京信息工程大学 A kind of condenser type infrared gas sensor based on MEMS
CN112649386A (en) * 2019-10-11 2021-04-13 迈来芯科技有限公司 Gas sensor device and method of manufacturing the same

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