CN102655169A - Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device - Google Patents
Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device Download PDFInfo
- Publication number
- CN102655169A CN102655169A CN2012101165549A CN201210116554A CN102655169A CN 102655169 A CN102655169 A CN 102655169A CN 2012101165549 A CN2012101165549 A CN 2012101165549A CN 201210116554 A CN201210116554 A CN 201210116554A CN 102655169 A CN102655169 A CN 102655169A
- Authority
- CN
- China
- Prior art keywords
- area
- zone
- substrate
- conduction type
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to a semiconductor device, in particular relates to a semiconductor device with overvoltage protection and a two-way polarity device based on the semiconductor device. The semiconductor device is implemented by the following technical scheme: the semiconductor device comprises a substrate, first areas and second areas, wherein the upper part of each first area is at least provided with one second area; a first opening area is formed between the adjacent first areas on the substrate; each first opening area is provided with a third area which is used for connecting the substrate and the adjacent first areas and is of a second conduction type; the lower part of the substrate is provided with a fourth area which is of the second conduction type; a first insulating layer is arranged above the third area, extends along the two sides corresponding to the third area and covers a part of the first area; the second area and the first area are respectively connected with a first metal contact; and the fourth area is connected with a second metal contact. The semiconductor device has the advantages that the overcurrent performance is higher and the reliability of the device is improved.
Description
Technical field
The present invention relates to semiconductor device, particularly a kind of semiconductor device with overvoltage protection reaches the two-way polarity device based on this device.
Background technology
Known invention multilayered semiconductor protection device; In the regional place of the intersection adjacent cathodes of negative electrode base and anode base; Placed a low puncture voltage zone, be similar to a trigger, and this trigger extension is connected across on two bases; U.S. Patent number like L.R. Avery is 5; 072,273 patent is announced the low trigger voltage semiconductor protection device, and the conduction mode of this device is superior to relying on the method for PN junction puncture voltage between anode base and the negative electrode base; Solved because the defective of semi-conducting material itself can't make breakdown threshold voltage on the whole border of PN junction between said base, reach the problem of uniformity, but also limited the total overcurrent ability to bear of this kind protection device simultaneously.
As shown in Figure 1, multilayered semiconductor overvoltage protector of the prior art is made up of following: N type substrate 1, p type island region territory 2, P+ zone 1, N+ zone 1, N+ zone 25, N+ zone 36, P+ zone 27, connect P+ zone 1 and N+ zone 1 Metal Contact 1, is connected the Metal Contact 29 of N+ zone 36 and P+ regional 27; When between Metal Contact 1 and Metal Contact 29, adding bias voltage; Metal Contact 1 is negative with respect to Metal Contact 29; PN junction between between N type substrate 1 and the p type island region territory 2 and N+ zone 25 and the p type island region territory 2 is reverse biased; Because the potential gradient of PN junction is higher than the potential gradient of PN junction between N type substrate 1 and the p type island region territory 2 between N+ zone 25 and the p type island region territory 2, PN junction punctures the at first PN junction formation between N+ zone 25 and p type island region territory 2 of required electric field strength; The breakdown current of the PN junction between N+ zone 25 and the p type island region territory 2 increases; Cause increasing from the part N+ zone 1 of P+ zone one 3 distal-most end and the electrical potential difference between the p type island region territory 2; Until the PN junction potential barrier at this place is enough low can be to electronics from N+ zone 1 to p type island region territory 2 till; And then these electronics are collected by back-biased PN junction between N type substrate 1 and the p type island region territory 2, make the negative electrical charge that occurs at N type substrate 1 be the gathering shape, thereby reduce the barrier height of PN junction between N type substrate 1 and the P+ zone 27; Make the hole flow into N type substrate 1 from P+ zone 27; These holes can be collected by PN junction between N type substrate 1 and the p type island region territory 2, thereby further cause electronics to flow out from N+ zone 1, and this positive feedback mechanism finally causes this multilayer device to get into the conducting state of low-resistance.
It is thus clear that turn on process betides the edge in N+ zone 1, the current density of the PN junction between p type island region territory 2 and the N+ zone 1 will reach the critical value that can bear of semi-conducting material easily and comparatively fast, thus fragile device.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor device with overvoltage protection, it has higher overcurrent performance, has improved the reliability of device.
Above-mentioned technical purpose of the present invention is achieved through following technical scheme: have the semiconductor device of overvoltage protection, it comprises:
The substrate that is first conduction type,
Be located at least two first areas that are second conduction type on said substrate top,
Be located at the second area that is first conduction type on top, said first area;
The top of each first area is provided with a second area at least; Said substrate forms first open area between adjacent first area; Each place, first open area all is provided with the 3rd zone that is second conduction type that connects said substrate and adjacent first area;
The bottom of said substrate is provided with the 4th zone that is second conduction type; Top, said the 3rd zone is provided with first insulating barrier, and said first insulating barrier extends and the first area, cover part along the both sides in corresponding the 3rd zone; Second area and first area all are connected with first Metal Contact; Said the 4th zone is connected with second Metal Contact.
In turn on process; Because puncture voltage can flow into two adjacent first areas simultaneously through the 3rd zone; Thereby strengthen the electrical potential difference at the second area edge in these two first areas simultaneously; Thereby relative background technology, the present invention has higher overcurrent capability, has improved the reliability of device.
The present invention also aims to provide a kind of two-way polar semiconductor device with overvoltage protection, it comprises:
The substrate that is first conduction type,
Be located at least two first areas that are second conduction type on said substrate top,
Be located at least two the 5th zones that are second conduction type of said substrate bottom,
Be located at the second area that is first conduction type on top, said first area,
Be located at the 6th zone that is first conduction type of said the 5th regional bottom;
The top of each first area is provided with a second area at least; The bottom in each the 5th zone is provided with one the 6th zone at least;
Said substrate forms first open area between adjacent first area; Each place, first open area all is provided with the 3rd zone that is second conduction type that connects said substrate and adjacent first area;
Said substrate forms second open area between adjacent the 5th zone; Each place, second open area all is provided with a SECTOR-SEVEN territory that is second conduction type that connects said substrate and adjacent the 5th zone;
Top, said the 3rd zone is provided with first insulating barrier, and said corresponding first insulating barrier extends and the first area, cover part along the both sides in corresponding the 3rd zone;
The below in said SECTOR-SEVEN territory is provided with second insulating barrier, and said corresponding second insulating barrier extends and the 5th zone, cover part along the both sides in corresponding SECTOR-SEVEN territory;
Second area and first area all are connected with first Metal Contact; The 5th zone all is connected with the 3rd Metal Contact with the 6th zone.
In sum, the present invention has following beneficial effect: the present invention has higher overcurrent capability in turn on process, thereby has improved the device reliability of operation, has also improved useful life.
Description of drawings
Fig. 1 is the background technology structural representation;
Fig. 2 is embodiment 1 structural representation;
Fig. 3 is embodiment 2 structural representations.
Among the figure, 1, N type substrate, 2, the p type island region territory, 3, P+ zone one, 4, N+ zone one; 5, N+ zone two, 6, N+ zone three, 7, P+ zone two, 8, Metal Contact one, 9, Metal Contact two; 10, substrate, 11, the first area, 12, first open area, 13, second area, the 14, the 3rd zone; 15, the 4th zone, 16, first insulating barrier, 17, first Metal Contact, 18, second Metal Contact, the 19, the 5th zone; 20, the 6th zone, 21, second open area, 22, the SECTOR-SEVEN territory, 23, second insulating barrier, the 24, the 3rd Metal Contact.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explain.
This specific embodiment only is to explanation of the present invention; It is not a limitation of the present invention; Those skilled in the art can make the modification that does not have creative contribution to present embodiment as required after reading this specification, but as long as in claim scope of the present invention, all receive the protection of Patent Law.
Embodiment 1: a kind of semiconductor device with overvoltage protection, and as shown in Figure 2, it comprises:
The substrate 10 that is first conduction type,
Be located at least two first areas 11 that are second conduction type on said substrate 10 tops,
Be located at the second area that is first conduction type 13 on 11 tops, said first area;
The top of each first area 11 is provided with a second area 13 at least; Said substrate 10 forms first open area 12 between adjacent first area 11; Each 12 place, first open area all is provided with the 3rd zone 14 that is second conduction type that connects said substrate 10 and adjacent first area 11;
The bottom of said substrate 10 is provided with the 4th zone 15 that is second conduction type; The said the 3rd regional 14 tops are provided with first insulating barrier 16, and said first insulating barrier 16 extends and first area, cover part 11 along the both sides in corresponding the 3rd zone 14; Second area 13 all is connected with first Metal Contact 17 with first area 11; Said the 4th zone 15 is connected with second Metal Contact 18.
Said first conduction type is the N type, and said second conduction type is the P type.
When between first Metal Contact 17 and second Metal Contact 18, adding bias voltage, first Metal Contact 17 is negative with respect to second Metal Contact 18; PN junction between PN junction between substrate 10 and the first area 11, first area 11 and the 3rd zone 14 is reverse biased; Because the electric-force gradient of the PN junction between first area 11 and the 3rd zone 14 is higher than the electric-force gradient of PN junction between substrate 10 and the first area 11; So puncture the PN junction that at first betides between first area 11 and the 3rd zone 14; Along with the increase of breakdown current, cause the electrical potential difference between second area 13 and the first area 11 to increase, when the PN junction is here reduced to when enough hanging down; Electronics is from second area 13 entering first areas 11; These electronics are collected by back-biased PN junction between substrate 10 and the first area 11, and these electronics are the gathering shape at substrate 10, thereby reduce the barrier height of PN junction between the substrate 10 and the 4th regional 15; Thereby make the hole flow into substrate 10 from the 4th zone 15; Make these holes collected by the PN junction between substrate 10 and the first area 11, thereby further cause electronics to flow out from second area 13, this positive feedback mechanism finally causes present embodiment to get into the low-resistance conducting state.
In turn on process; Because puncture voltage can flow into two adjacent first areas 11 that are positioned at 12 both sides, corresponding first open area simultaneously through the 3rd zone 14; Thereby strengthen the electrical potential difference at second area 13 edges in these two first areas 11 simultaneously, thereby make present embodiment have higher overcurrent capability.
Present embodiment can adopt common technology, as: photoetching, ion injection, diffusion, vacuum and plasma process preparation, can also adopt semiconductor planar technology simultaneously, also can adopt the preparation of semiconductor single face and/or two-sided mesa technique.
Embodiment 2: a kind of two-way polar semiconductor device with overvoltage protection, and as shown in Figure 3, it comprises:
The substrate 10 that is first conduction type,
Be located at least two first areas 11 that are second conduction type on said substrate 10 tops,
Be located at least two the 5th zones 19 that are second conduction type of said substrate 10 bottoms,
Be located at the second area that is first conduction type 13 on 11 tops, said first area,
Be located at the 6th zone 20 that is first conduction type of the said the 5th regional 19 bottoms;
The top of each first area 11 is provided with a second area 13 at least; The bottom in each the 5th zone 19 is provided with one the 6th zone 20 at least;
Said substrate 10 forms first open area 12 between adjacent first area 11; Each 12 place, first open area all is provided with the 3rd zone 14 that is second conduction type that connects said substrate 10 and adjacent first area 11;
Said substrate 10 forms second open area 21 between adjacent the 5th zone 19; Each 21 place, second open area all is provided with a SECTOR-SEVEN territory 22 that is second conduction type that connects said substrate 10 and adjacent the 5th zone 19;
The said the 3rd regional 14 tops are provided with first insulating barrier 16, and said corresponding first insulating barrier 16 extends and first area, cover part 11 along the both sides in corresponding the 3rd zone 14;
The below in said SECTOR-SEVEN territory 22 is provided with second insulating barrier 23, and said corresponding second insulating barrier 23 extends along the both sides in corresponding SECTOR-SEVEN territory 22 and the 5th zone 19, cover part;
Said first conduction type is the N type, and said second conduction type is the P type.
The conduction mode of present embodiment and embodiment 1 are similar, and can realize two-way admittance.
Present embodiment can adopt common technology, as: photoetching, ion injection, diffusion, vacuum and plasma process preparation, can also adopt semiconductor planar technology simultaneously, also can adopt the preparation of semiconductor single face and/or two-sided mesa technique.
Claims (2)
1. semiconductor device with overvoltage protection is characterized in that it comprises:
The substrate (10) that is first conduction type,
Be located at least two first areas (11) that are second conduction type on said substrate (10) top,
Be located at the second area that is first conduction type (13) on top, said first area (11);
The top of each first area (11) is provided with a second area (13) at least; Said substrate (10) forms first open area (12) between adjacent first area (11); The 3rd zone (14) that is second conduction type that connects said substrate (10) and adjacent first area (11) is located all to be provided with in each first open area (12);
The bottom of said substrate (10) is provided with the 4th zone (15) that is second conduction type; Top, said the 3rd zone (14) is provided with first insulating barrier (16), and said corresponding first insulating barrier (16) extends and first area, cover part (11) along the both sides of corresponding the 3rd zone (14); Second area (13) all is connected with first Metal Contact (17) with first area (11); Said the 4th zone (15) is connected with second Metal Contact (18).
2. two-way polar semiconductor device with overvoltage protection is characterized in that it comprises:
The substrate (10) that is first conduction type,
Be located at least two first areas (11) that are second conduction type on said substrate (10) top,
Be located at least two the 5th zones (19) that are second conduction type of said substrate (10) bottom,
Be located at the second area that is first conduction type (13) on top, said first area (11),
Be located at the 6th zone (20) that is first conduction type of bottom, said the 5th zone (19);
The top of each first area (11) is provided with a second area (13) at least; The bottom in each the 5th zone (19) is provided with one the 6th zone (20) at least;
Said substrate (10) forms first open area (12) between adjacent first area (11); The 3rd zone (14) that is second conduction type that connects said substrate (10) and adjacent first area (11) is located all to be provided with in each first open area (12);
Said substrate (10) forms second open area (21) between adjacent the 5th zone (19); A SECTOR-SEVEN territory (22) that is second conduction type that connects said substrate (10) and adjacent the 5th zone (19) is located all to be provided with in each second open area (21);
Top, said the 3rd zone (14) is provided with first insulating barrier (16), and said corresponding first insulating barrier (16) extends and first area, cover part (11) along the both sides of corresponding the 3rd zone (14);
The below in said SECTOR-SEVEN territory (22) is provided with second insulating barrier (23), and said corresponding second insulating barrier (23) extends and the 5th zone, cover part (19) along the both sides of corresponding SECTOR-SEVEN territory (22);
Second area (13) all is connected with first Metal Contact (17) with first area (11); The 5th zone (19) all is connected with the 3rd Metal Contact (24) with the 6th zone (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210116554.9A CN102655169B (en) | 2012-04-20 | 2012-04-20 | Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210116554.9A CN102655169B (en) | 2012-04-20 | 2012-04-20 | Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102655169A true CN102655169A (en) | 2012-09-05 |
| CN102655169B CN102655169B (en) | 2014-07-23 |
Family
ID=46730764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210116554.9A Active CN102655169B (en) | 2012-04-20 | 2012-04-20 | Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102655169B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
| US5502317A (en) * | 1993-07-14 | 1996-03-26 | Texas Instruments Incorporated | Silicon controlled rectifier and method for forming the same |
| EP0624906B1 (en) * | 1993-05-13 | 2001-08-08 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrated structure circuit for the protection of power devices against overvoltages |
| US20020149059A1 (en) * | 2001-02-02 | 2002-10-17 | Ming-Dou Ker | ESD protection design with turn-on restraining method and structures |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
| CN202585416U (en) * | 2012-04-20 | 2012-12-05 | 谢可勋 | Semiconductor device with overvoltage protection and bidirectional polarity device based on device |
-
2012
- 2012-04-20 CN CN201210116554.9A patent/CN102655169B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
| EP0624906B1 (en) * | 1993-05-13 | 2001-08-08 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrated structure circuit for the protection of power devices against overvoltages |
| US5502317A (en) * | 1993-07-14 | 1996-03-26 | Texas Instruments Incorporated | Silicon controlled rectifier and method for forming the same |
| US20020149059A1 (en) * | 2001-02-02 | 2002-10-17 | Ming-Dou Ker | ESD protection design with turn-on restraining method and structures |
| US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
| CN202585416U (en) * | 2012-04-20 | 2012-12-05 | 谢可勋 | Semiconductor device with overvoltage protection and bidirectional polarity device based on device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102655169B (en) | 2014-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1967868B (en) | Semiconductor device and method of manufacturing the same | |
| CN102347356B (en) | Semiconductor device having switching element and free wheel diode and method for controlling the same | |
| CN105556668B (en) | Semiconductor device | |
| CN108389900B (en) | SOI LIGBT with short-circuit anode of groove grid | |
| US10580885B1 (en) | Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems | |
| CN107293579A (en) | A kind of superjunction IGBT with low conduction voltage drop | |
| CN106133889A (en) | Semiconductor device | |
| CN104871312A (en) | Semiconductor device | |
| CN104995737B (en) | Semiconductor device | |
| JP5410133B2 (en) | Semiconductor device and control method thereof | |
| CN113451400A (en) | Trench gate reverse conducting type IGBT device | |
| JPWO2011080928A1 (en) | Semiconductor device and power conversion device using the same | |
| CN105552109B (en) | A kind of short circuit anode landscape insulation bar double-pole-type transistor | |
| CN207637805U (en) | Vertical channel semiconductor devices | |
| CN105489644A (en) | IGBT device and fabrication method thereof | |
| JP2011176244A (en) | Semiconductor device | |
| JP2011134998A (en) | Semiconductor device | |
| CN205231070U (en) | IGBT device | |
| CN202394974U (en) | Bidirectional SCR ESD protection circuit of lower trigger voltage | |
| CN202585416U (en) | Semiconductor device with overvoltage protection and bidirectional polarity device based on device | |
| CN105830221A (en) | Reverse-conducting semiconductor device | |
| CN102263126B (en) | Short-circuit Thyristor | |
| JP2018182240A (en) | Semiconductor switching element and method of manufacturing the same | |
| CN102655169B (en) | Semiconductor device with overvoltage protection and two-way polarity device based on semiconductor device | |
| CN102683396B (en) | There is the semiconductor device of overvoltage protection and the two-way polarity device based on this device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee after: ZHEJIANG MJ TECHNOLOGYCO.,LTD. Patentee after: Xie Kexun Address before: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee before: ZHEJIANG MEIJING TECHNOLOGY Co.,Ltd. Patentee before: Xie Kexun |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190918 Address after: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Patentee after: Bengbu HRABERO Intellectual Property Service Co.,Ltd. Address before: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee before: ZHEJIANG MJ TECHNOLOGYCO.,LTD. Patentee before: Xie Kexun |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221031 Address after: 257000 Lijin Economic Development Zone, Dongying City, Shandong Province Patentee after: SHANDONG DADONGLIAN PETROLEUM EQUIPMENT Co.,Ltd. Address before: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Patentee before: Bengbu HRABERO Intellectual Property Service Co.,Ltd. |