CN102651425A - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
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- CN102651425A CN102651425A CN2011100509997A CN201110050999A CN102651425A CN 102651425 A CN102651425 A CN 102651425A CN 2011100509997 A CN2011100509997 A CN 2011100509997A CN 201110050999 A CN201110050999 A CN 201110050999A CN 102651425 A CN102651425 A CN 102651425A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for manufacturing a solar cell. The method comprises the following steps of: performing ion implantation on a first surface of a substrate to form a first doped layer; performing ion implantation on a second surface of the substrate to form a second doped layer; performing an annealing process on a structure formed by the substrate, the first doped layer and the second doped layer; forming a first passivation layer on the first doped layer and forming a second passivation layer on the second doped layer through the annealing process; forming a third passivation layer on the first passivation layer which is formed through the annealing process; forming a fourth passivation layer on the second passivation layer which is formed through the annealing process; and forming conductive electrodes on the third passivation layer and the fourth passivation layer respectively.
Description
Technical field
The invention relates to a kind of manufacturing approach of electrooptical device, and particularly relevant for a kind of manufacturing approach of solar cell.
Background technology
The doping way of conventional solar cell is for adopting diffusion process, connects face to form p-n among admixture is mixed substrate, and this p-n connects face and receiving to produce moving of electron hole pair under the light situation, and then in substrate, produces electric current to reach the purpose of opto-electronic conversion.For example, if solar cell adopts p type substrate, when the diffusion process of solar cell, place high temperature furnace pipe to carry out n type phosphorous diffusion program p type substrate, so that p type substrate is mixed n type admixture.
Yet in the high temperature phosphorous diffusion process; Can form unnecessary silicic acid phosphorus glass (Phospho-SilicateGlass; PSG); And after diffusion process, whole p type substrate can be coated by one deck n type admixture, and this n type admixture may cause between the solar cell positive and negative electrode and produce short circuit phenomenon.In order to remove the unnecessary silicic acid phosphorus glass of substrate surface and to avoid the phenomenon that is short-circuited between the positive and negative electrode; Usually also need see through phosphorus glass and remove (Phospho-Silicate Glass Etching; PGE) mode is removed phosphorus glass, and uses laser, plasma or chemical etching mode to carry out isolated (Edge Isolation) program in edge of substrate.
Hence one can see that, adopts after diffusion process mixes required admixture extra the carrying out of still needing, complicated process such as for example phosphorus glass is removed and substrate edges is isolated at the substrate of solar cell.Therefore, still have on the processing procedure of the doping way of conventional solar cell and improve the space of simplifying, and become an important topic.
Summary of the invention
The method that a purpose of the present invention is to provide a kind of solar cell to make is to solve on the known solar cells processing procedure comparatively complicated problems.
An execution mode of the present invention is that a kind of manufacturing approach of solar cell is being provided, and it is following to comprise step: the first surface to substrate carries out implanting ions to form first doped layer; Second surface to substrate carries out implanting ions to form second doped layer; The formed structure of substrate, first doped layer and second doped layer is carried out cycle of annealing, and through cycle of annealing form first passivation layer on first doped layer with form second passivation layer on second doped layer; In on formed first passivation layer behind the cycle of annealing, forming the 3rd passivation layer; In on formed second passivation layer behind the cycle of annealing, forming the 4th passivation layer; And respectively at forming conductive electrode on the 3rd passivation layer and the 4th passivation layer.
According to one embodiment of the invention, also be contained in and carry out before the implanting ions, utilize etching mode that the first surface and the second surface of substrate are made roughened.
According to another embodiment of the present invention, wherein substrate is a p type substrate, and first surface is to see through to carry out implanting ions and implant n type admixture, and second surface is to see through to carry out implanting ions and implant p+ type admixture.
According to further embodiment of this invention, wherein substrate is a n type substrate, and first surface is to see through to carry out implanting ions and implant p type admixture, and second surface is to see through to carry out implanting ions and implant n+ type admixture.
According to yet another embodiment of the invention, wherein the 3rd passivation layer and the 4th passivation layer are to see through a chemical vapour deposition (CVD) mode to form.
Another embodiment of the present invention is that a kind of manufacturing approach of solar cell is being provided, and it is following to comprise step: the first surface to substrate carries out implanting ions to form first doped layer; Second surface to substrate carries out implanting ions to form second doped layer; The formed structure of substrate, first doped layer and second doped layer is carried out cycle of annealing, and through cycle of annealing form first passivation layer on first doped layer with form second passivation layer on second doped layer; In on formed first passivation layer behind the cycle of annealing, forming the 3rd passivation layer; And respectively at the 3rd passivation layer and through forming conductive electrode on formed second passivation layer behind the cycle of annealing.
According to one embodiment of the invention, also be contained in and carry out before the implanting ions, utilize etching mode that the first surface of substrate is made roughened.
According to another embodiment of the present invention, wherein substrate is a p type substrate, and first surface is to see through to carry out implanting ions and implant n type admixture, and second surface is to see through to carry out implanting ions and implant p+ type admixture.
According to further embodiment of this invention, wherein substrate is a n type substrate, and first surface is to see through to carry out implanting ions and implant p type admixture, and second surface is to see through to carry out implanting ions and implant n+ type admixture.
According to yet another embodiment of the invention, wherein the 3rd passivation layer is to see through a chemical vapour deposition (CVD) mode to form.
Using advantage of the present invention is to utilize the implanting ions mode to implant required impurity, mix impurity via the cycle of annealing activation again after, can accomplish the solar cell substrate dopping process.Above-mentioned implanting ions mode also can be reduced in the conventional solar cell substrate dopping process; For example, remove the isolated step of phosphorus glass and substrate edges, thereby simplified the processing procedure that mixes; And in the cycle of annealing that carries out implanting ions with carry out chemical vapour deposition (CVD) after each self-forming passivation layer; And can under less fabrication steps, obtain dual layer passivation layer structure, make the manufacture process of whole solar cell be able to simplify, and then quicken production procedure.
Description of drawings
For letting above and other objects of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Figure 1A～Fig. 1 I illustrates the structural representation of making flow process according to the solar cell of an embodiment of the present invention;
Fig. 2 is the method for manufacturing solar battery flow chart that illustrates according to an embodiment of the present invention;
Fig. 3 A～Fig. 3 H illustrates the structural representation of making flow process according to the solar cell of another execution mode of the present invention;
Fig. 4 is the method for manufacturing solar battery flow chart that illustrates according to another execution mode of the present invention.
[primary clustering symbol description]
110: substrate 310: substrate
120: first surface 320: first surface
130: second surface 330: second surface
340: the first doped layers of 140: the first doped layers
350: the second doped layers of 150: the second doped layers
360: the first passivation layers of 160: the first passivation layers
361: the three passivation layers of 161: the three passivation layers
370: the second passivation layers of 170: the second passivation layers
380: the first electrodes of 171: the four passivation layers
390: the second electrodes of 180: the first electrodes
Electrode 391 in 190: the second: back layer
210～280: step 410～470: step
Embodiment
Below will and be described in detail and clearly demonstrate spirit of the present invention with accompanying drawing; Has common knowledge the knowledgeable under any in the technical field after understanding preferred embodiment of the present invention; When can be by the technology of teachings of the present invention, change and modification, it does not break away from spirit of the present invention and scope.
Figure 1A～Fig. 1 I illustrates the structural representation of making flow process according to the solar cell of an embodiment of the present invention, and Fig. 2 is the method for manufacturing solar battery flow chart that illustrates according to an embodiment of the present invention.Please consult Figure 1A～Fig. 1 I and Fig. 2 simultaneously.
In step 210, utilize etching mode that the first surface 120 of the substrate 110 of Figure 1A is made roughened (Textured Process) with second surface 130, and become structure shown in Figure 1B.The roughened of above-mentioned first surface 120 and second surface 130 can be simultaneously or separates and carry out, and more can only carry out the roughened of first surface 120 or second surface 130 according to the demand in the practical application.After above-mentioned roughened, produce scattering and multipath reflection in the time of can being incident in this rough surface through light, so that longer light travel path to be provided, to increase the number that photon gets into substrate 110, and then form more electron hole.The etching mode of above-mentioned roughened can be wet etching (Wet Etching) or dry-etching method (Dry Etching).
In step 220, the first surface 120 of substrate 110 is carried out implanting ions to form first doped layer 140, see also Fig. 1 C.For example; When substrate 110 is p section bar matter; Utilize the implanting ions mode; With the first surface 120 of n type dopant ion implantation substrate 110, make substrate 110 at first doped layer 140 that forms the n type near the part of first surface 120, connect face between the substrate 110 and first doped layer 140 and form p-n.Likewise; When substrate 110 is n section bar matter; Utilize the implanting ions mode; With the first surface 120 of p type dopant ion implantation substrate 110, make substrate 110 at first doped layer 140 that forms the p type near the part of first surface 120, connect face between the substrate 110 and first doped layer 140 and form p-n.
In step 230, the second surface 130 of substrate 110 is carried out implanting ions to form second doped layer 150, see also Fig. 1 D.For example; When substrate 110 is p section bar matter; Utilize the implanting ions mode; With the second surface 130 of p+ type dopant ion implantation substrate 110, make substrate 110 at second doped layer 150 that forms the p+ type near the part of second surface 130, and the p-p+ that the p-n in formation and the step 220 connects in the face of claiming connect face between the substrate 110 and second doped layer 150.Likewise; When substrate 110 is n section bar matter; Utilize the implanting ions mode; With the second surface 130 of n+ type dopant ion implantation substrate 110, make substrate 110 at second doped layer 150 that forms the n+ type near the part of second surface 130, and the n-n+ that the p-n in formation and the step 220 connects in the face of claiming connect face between the substrate 110 and second doped layer 150.
Then in step 240, substrate 110, first doped layer 140 and second doped layer, 150 formed structures are carried out cycle of annealing.The mode of annealing can be that (Rapid Thermal Annealing, RTA), but the ion that its activation is implanted is repaired the cloth that implanting ions caused and planted damage (also be called lattice and disorder, Lattice Disorder) for the annealing of traditional boiler tube or rapid thermal annealing.Therefore; Aforesaid substrate 110, first doped layer 140 and second doped layer, 150 formed structures are after carrying out cycle of annealing; Its dopant ion can activation and also the cloth of dopant ion plant to damage and be able to repaired; And reach the purpose that substrate 110 mixes, and form simultaneously first passivation layer 160 on first doped layer 140 with form second passivation layer 170 on second doped layer 150, see also Fig. 1 E.Wherein, first passivation layer 160 and second passivation layer 170 for through behind the above-mentioned cycle of annealing on first doped layer 140 and second doped layer 150 formed oxide layer (Oxide Layer).
See also Fig. 1 F, in step 250, on formed first passivation layer 160 behind the cycle of annealing, forming the 3rd passivation layer 161, make win passivation layer 160 and the 3rd passivation layer 161 formation dual layer passivation layer structure.Above-mentioned the 3rd passivation layer 161 can see through chemical vapour deposition (CVD) mode (for example: with the plasma-assisted chemical depositional mode) and form; And the material of the 3rd passivation layer 161 can be nitride (Nitride) or oxide (Oxide); The formation of above-mentioned passivation layer can reduce the reflection that incident light gets into first doped layer 140 by external environment, to increase the photoelectric conversion efficiency of solar cell.
See also Fig. 1 G, in step 260,, make second passivation layer 170 and the 4th passivation layer 171 form dual layer passivation layer structure on formed second passivation layer 170 behind the cycle of annealing, forming the 4th passivation layer 171.The mode that above-mentioned the 4th passivation layer 171 forms is identical or similar with above-mentioned the 3rd passivation layer 161, and the formation of above-mentioned passivation layer can reduce the reflection that incident light gets into second doped layer 150 by external environment, to increase the photoelectric conversion efficiency of solar cell.
In step 270, form conductive electrode 180 and 190 respectively on the 3rd passivation layer 161 and the 4th passivation layer 171, see also Fig. 1 H.Above-mentioned conductive electrode is capable of using to be formed like the screen painting (Screen Printing) or (Plating) mode of plating.With the screen painting is example, and its mode is that (for example: the silver slurry) half tone or the metallic plate through tool circuit pattern (Pattern) is printed on the 3rd passivation layer 161, through drying procedure paste hardened, to form first electrode 180 again with paste.Then, paste is printed on the 4th passivation layer 171 according to aforesaid way, through drying procedure paste is hardened again, to form second electrode 190.So just accomplish the printing of first electrode 180 and 190 two kinds of conductive electrodes of second electrode.Be noted that the order of above-mentioned formation first electrode 180 and second electrode 190 can be exchanged each other, does not exceed with above-mentioned.
The continue manufacturing of above-mentioned conductive electrode 180 and 190 of step 280; Shown in Fig. 1 I, in this step, see through high temperature sintering (Firing) program, remove the organic principle of paste; And let first electrode 180 be able to penetrate the 3rd passivation layer 161 and first passivation layer 160; And the top layer of infiltrating first doped layer 140 forms ohmic contact (Ohmic Contact), and second electrode 190 is able to penetrate the 4th passivation layer 171 and second passivation layer 170 simultaneously, and infiltrates the top layer formation ohmic contact of second doped layer 150; The electric current that makes win electrode 180 and second electrode 190 be able to the electron hole is produced is derived, and accomplishes the fabrication schedule of double-sided solar battery.Therefore, above-mentioned double-sided solar battery is not increasing under the fabrication schedule step, makes solar cell two-sided have dual layer passivation layer structure simultaneously.
Fig. 3 A～Fig. 3 H illustrates the structural representation of making flow process according to the solar cell of another execution mode of the present invention, and Fig. 4 is the method for manufacturing solar battery flow chart that illustrates according to another execution mode of the present invention.Please consult Fig. 3 A～Fig. 3 H and Fig. 4 simultaneously.
In step 410, utilize etching mode that the first surface 320 of the substrate 310 of Fig. 3 A is made roughened, and become structure shown in Fig. 3 B.The roughened on aforesaid substrate surface 310 also can be according to the demand in the practical application, simultaneously or separately carry out first surface 320 and (or) roughened of second surface 330, and do not exceed with above-mentioned.After above-mentioned roughened, produce scattering and multipath reflection in the time of can being incident in this rough surface through light, so that longer light travel path to be provided, to increase the number that photon gets into substrate 310, and then form more electron hole.The etching mode of above-mentioned roughened can be wet etching or dry-etching method.
In step 420, the first surface 320 of substrate 310 is carried out implanting ions to form first doped layer 340, see also Fig. 3 C.For example; When substrate 310 is p section bar matter; Utilize the implanting ions mode; With the first surface 320 of n type dopant ion implantation substrate 310, make substrate 310 at first doped layer 340 that forms the n type near the part of first surface 320, connect face between the substrate 310 and first doped layer 340 and form p-n.Likewise; When substrate 310 is n section bar matter; Utilize the implanting ions mode; With the first surface 320 of p type dopant ion implantation substrate 310, make substrate 310 at first doped layer 340 that forms the p type near the part of first surface 320, connect face between the substrate 310 and first doped layer 340 and form p-n.
In step 430, the second surface 330 of substrate 310 is carried out implanting ions to form second doped layer 350, see also Fig. 3 D.For example; When substrate 310 is p section bar matter; Utilize the implanting ions mode; With the second surface 330 of p+ type dopant ion implantation substrate 310, make substrate 310 at second doped layer 350 that forms the p+ type near the part of second surface 330, and the p-p+ that the p-n in formation and the step 420 connects in the face of claiming connect face between the substrate 310 and second doped layer 350.Likewise; When substrate 310 is n section bar matter; Utilize the implanting ions mode; With the second surface 330 of n+ type dopant ion implantation substrate 310, make substrate 310 at second doped layer 350 that forms the n+ type near the part of second surface 330, and the n-n+ that the p-n in formation and the step 420 connects in the face of claiming connect face between the substrate 310 and second doped layer 350.
Then in step 440, substrate 310, first doped layer 340 and second doped layer, 350 formed structures are carried out cycle of annealing.The mode of annealing can be traditional boiler tube annealing or rapid thermal annealing, but the ion that its activation is implanted is repaired the cloth that implanting ions caused and planted damage.Therefore; Aforesaid substrate 310, first doped layer 340 and second doped layer, 350 formed structures are after carrying out cycle of annealing; Its dopant ion can activation and also the cloth of dopant ion plant to damage and be able to repaired; And reach the purpose that substrate 310 mixes, and form simultaneously first passivation layer 360 on first doped layer 340 with form second passivation layer 370 on second doped layer 350, see also Fig. 3 E.Wherein, first passivation layer 360 and second passivation layer 370 for through behind the above-mentioned cycle of annealing on first doped layer 340 and second doped layer 350 formed oxide layer.
See also Fig. 3 F, in step 450, on formed first passivation layer 360 behind the cycle of annealing, forming the 3rd passivation layer 361, make win passivation layer 360 and the 3rd passivation layer 361 formation dual layer passivation layer structure.Above-mentioned the 3rd passivation layer 361 can see through chemical vapour deposition (CVD) mode (for example: with the plasma-assisted chemical depositional mode) and form; And the material of the 3rd passivation layer 361 can be nitride or oxide; The formation of above-mentioned passivation layer can reduce the reflection that incident light gets into first doped layer 340 by external environment, to increase the photoelectric conversion efficiency of solar cell.
In step 460, form conductive electrode 380 and 390 respectively in the 3rd passivation layer 361 and on formed second passivation layer 370 behind the cycle of annealing, see also Fig. 3 G.Above-mentioned conductive electrode is capable of using to be formed like screen painting or plating mode.With the screen painting is example, and its mode is that (for example: the silver slurry) half tone or the metallic plate through the tool circuit pattern is printed on the 3rd passivation layer 361, through drying procedure paste hardened, to form first electrode 380 again with paste.Then, paste is printed on second passivation layer 370 according to aforesaid way, through drying procedure paste is hardened again, to form second electrode 390.Then, again (for example: aluminium paste) coat on whole second passivation layer 370, through drying procedure metal material is hardened again, to form back layer 391 with metal material.So just accomplish the printing of first electrode 380 and 390 two kinds of conductive electrodes of second electrode.Be noted that the order of above-mentioned formation first electrode 380 and second electrode 390 can be exchanged each other, does not exceed with above-mentioned.
The continue manufacturing of above-mentioned conductive electrode 380 and 390 of step 470; Shown in Fig. 3 H, in this step, see through the high temperature sintering program, remove the organic principle of paste; And let first electrode 380 be able to penetrate the 3rd passivation layer 361 and first passivation layer 360; And the top layer of infiltrating first doped layer 340 forms ohmic contact, and second electrode 390 is able to penetrate second passivation layer 370 simultaneously, and the top layer of infiltrating second doped layer 350 forms ohmic contact; The electric current that makes win electrode 380 and second electrode 390 be able to the electron hole is produced is derived, and accomplishes the fabrication schedule of solar cell.Therefore, above-mentioned solar cell is not increasing under the fabrication schedule step, makes solar cell have dual layer passivation layer structure.
Above-mentioned steps and description of drawings are to use in order to disclose feature description of the present invention; Not detailed descriptionthe with depict the detail section of whole solar cell manufacturing process; Mentioned step in this execution mode except that chatting bright its order person especially, all can be adjusted order before and after it according to actual needs; Even can carry out simultaneously simultaneously or partly, and do not exceed with above-mentioned.
In sum, use the present invention and have the advantage of simplifying the solar cell processing procedure.The present invention utilizes the implanting ions mode to implant required impurity, mix impurity via the cycle of annealing activation again after, can accomplish the solar cell substrate dopping process.Above-mentioned implanting ions mode more can be reduced in the conventional solar cell substrate dopping process; For example, remove the isolated step of phosphorus glass and substrate edges, thereby simplified the processing procedure that mixes; And in the cycle of annealing that carries out implanting ions with carry out chemical vapour deposition (CVD) after each self-forming passivation layer; And can under less fabrication steps, obtain dual layer passivation layer structure, make the manufacture process of whole solar cell be able to simplify, and then quicken production procedure.
Though the present invention discloses as above with execution mode; Right its is not in order to limit the present invention; Anyly be familiar with this art; Do not breaking away from the spirit and scope of the present invention, when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (10)
1. the manufacturing approach of a solar cell is characterized in that, comprises:
First surface to a substrate carries out implanting ions, to form one first doped layer;
Second surface to this substrate carries out implanting ions, to form one second doped layer;
This substrate, this first doped layer and the formed structure of this second doped layer are carried out a cycle of annealing, and through this cycle of annealing form one first passivation layer on this first doped layer with form one second passivation layer on this second doped layer;
Form one the 3rd passivation layer on formed this first passivation layer behind this cycle of annealing;
Form one the 4th passivation layer on formed this second passivation layer behind this cycle of annealing; And
Form conductive electrode respectively on the 3rd passivation layer and the 4th passivation layer.
2. the manufacturing approach of solar cell according to claim 1 is characterized in that, also is contained in to carry out before the implanting ions, utilizes etching mode that this first surface and this second surface of this substrate are made roughened.
3. the manufacturing approach of solar cell according to claim 1 is characterized in that, this substrate is a p type substrate, and this first surface is to see through to carry out implanting ions and implant n type admixture, and this second surface is to see through to carry out implanting ions and implant p+ type admixture.
4. the manufacturing approach of solar cell according to claim 1 is characterized in that, this substrate is a n type substrate, and this first surface is to see through to carry out implanting ions and implant p type admixture, and this second surface is to see through to carry out implanting ions and implant n+ type admixture.
5. the manufacturing approach of solar cell according to claim 1 is characterized in that, the 3rd passivation layer and the 4th passivation layer are to see through a chemical vapour deposition (CVD) mode to form.
6. the manufacturing approach of a solar cell is characterized in that, comprises:
First surface to a substrate carries out implanting ions, to form one first doped layer;
Second surface to this substrate carries out implanting ions, to form one second doped layer;
This substrate, this first doped layer and the formed structure of this second doped layer are carried out a cycle of annealing, and through this cycle of annealing form one first passivation layer on this first doped layer with form one second passivation layer on this second doped layer;
Form one the 3rd passivation layer on formed this first passivation layer behind this cycle of annealing; And
Form conductive electrode respectively in the 3rd passivation layer and on formed this second passivation layer behind this cycle of annealing.
7. the manufacturing approach of solar cell according to claim 6 is characterized in that, also is contained in to carry out before the implanting ions, utilizes etching mode that this first surface of this substrate is made roughened.
8. the manufacturing approach of solar cell according to claim 6 is characterized in that, this substrate is a p type substrate, and this first surface is to see through to carry out implanting ions and implant n type admixture, and this second surface is to see through to carry out implanting ions and implant p+ type admixture.
9. the manufacturing approach of solar cell according to claim 6 is characterized in that, this substrate is a n type substrate, and this first surface is to see through to carry out implanting ions and implant p type admixture, and this second surface is to see through to carry out implanting ions and implant p+ type admixture.
10. the manufacturing approach of solar cell according to claim 6 is characterized in that, the 3rd passivation layer is to see through a chemical vapour deposition (CVD) mode to form.
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| CN105702797A (en) * | 2014-11-27 | 2016-06-22 | 上海晶玺电子科技有限公司 | Manufacturing method of double-face battery |
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| CN102651425B (en) | 2015-02-25 |
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