CN102646790A - Non-volatile memory - Google Patents
Non-volatile memory Download PDFInfo
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- CN102646790A CN102646790A CN2011100419083A CN201110041908A CN102646790A CN 102646790 A CN102646790 A CN 102646790A CN 2011100419083 A CN2011100419083 A CN 2011100419083A CN 201110041908 A CN201110041908 A CN 201110041908A CN 102646790 A CN102646790 A CN 102646790A
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- volatility memorizer
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Abstract
The invention discloses a non-volatile memory, which comprises a lower conductive layer, a resistance transition layer arranged on the lower conductive layer, an oxygen-shortage buffer layer arranged on the resistance transition layer and an upper conductive layer arranged on the oxygen-shortage buffer layer.
Description
Technical field
Present invention is directed to a kind of memory component, particularly relevant for a kind of resistance-type non-volatility memorizer.
Background technology
Non-volatility memorizer in the market is a main flow with flash memory (Flash Memory) still, but shortcomings such as it has that operating voltage is big, service speed slow, data preservation property difference will limit the flash memory development in future.In addition, under the trend of element micro processing procedure, effect is satisfied in wearing of thin excessively gate pole oxidation layer, will cause data preservation property not good, also is the problem of current serious.
At present existing many new-type non-volatility memorizer materials and element comprise magnetic memory (MRAM), Ovonics unified memory (OUM) and resistance-type memory (RRAM) etc. just by in the positive research and development.Wherein the resistance-type non-volatility memorizer have that power consumption is low, operating voltage is low, write the time of erasing short, durability degree is long, memory time is long, non-destructive reads, multimode store, the element processing procedure simply reaches advantages such as micro property.People such as Baek utilize the embolism hearth electrode to go to reduce the resistance value variation [I.G.Baek et al., in Tech.Dig.of IEDM (2005)] of two stable states; People such as Kim utilize resilient coating iridium dioxide (IrO
2) go to improve the resistance value variation of two stable states, and can remove the danger [D.C.Kim et al., Appl.Phys.Lett., 88,232106 (2006)] that writes failure.
Problems such as transition stability is not good often take place in traditional resistance-type non-volatility memorizer, limit its application at non-volatile memory component.Aspect in addition; The structure of resistance-type memory has two kinds: a transistor (transistor) and the combination (1T1R) of a resistive element and the combination (1D1R) of a diode (diode) and a resistive element; Wherein but the 1D1R resistance-type memory has micro to the advantage than small components, but the resistive element of need a kind of monolateral resistance transitions of coupling (unipolar resistive switchingbehavior) just can be reached the function of 1D1R resistance-type memory.Therefore, need the non-volatility memorizer of a kind of monolateral resistance transition (unipolar resistive switching behavior) operation, it has high durability degree, high stability, making is easy and low cost and other advantages.
Summary of the invention
One embodiment of the invention provide a kind of non-volatility memorizer, comprise a lower conductiving layer; One resistance transition layer is arranged on the above-mentioned lower conductiving layer; One oxygen lacks resilient coating, is arranged on the above-mentioned resistance transition layer; And conductive layer on, be arranged at above-mentioned oxygen and lack on the resilient coating.
For making the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphicly, elaborates as follows:
Description of drawings
Fig. 1 a is the generalized section of the non-volatility memorizer of the embodiment of the invention.
Fig. 1 b is the generalized section of the non-volatility memorizer of comparative example.
Fig. 2 a is the electric current and voltage measurement of the non-volatility memorizer of the embodiment of the invention.
Fig. 2 b is the electric current and voltage measurement of the non-volatility memorizer of comparative example.
Fig. 3 a is the durability degree resolution chart of the non-volatility memorizer of the embodiment of the invention.
The durability degree resolution chart of the non-volatility memorizer of Fig. 3 b comparative example.
Fig. 4 is the storage power test of the non-volatility memorizer of the embodiment of the invention.
Fig. 5 is the non-destructive read test of the non-volatility memorizer of the embodiment of the invention.
Fig. 6 is the potential pulse durability degree resolution chart of the non-volatility memorizer of the embodiment of the invention.
The main element symbol description:
500～non-volatility memorizer;
200～substrate;
202～insulating barrier;
204～titanium film;
206～platinum film;
207～lower conductiving layer;
208～resistance transition layer;
209～double-deck sull structure;
210～oxygen lacks resilient coating;
212～upward conductive layers;
Embodiment
Embodiment of the invention system provides a kind of non-volatility memorizer, and it utilizes the change of resistance value to reach storage effect.The non-volatility memorizer system of the embodiment of the invention adopts noble metal as hearth electrode, and zirconium dioxide (ZrO afterwards grows up
2) film is as resistance transition layer, the zirconium dioxide (CaO:ZrO of growth doping calcium oxide on resistance transition layer again
2) lack resilient coating as oxygen, to form double-deck sull structure; And utilize reactive metal to change memory film inner oxygen condition and distribution thereof as top electrode.The durability degree of element and stability when the method can significantly promote monolateral operation.
Fig. 1 a system is the generalized section of the non-volatility memorizer 500 of one embodiment of the invention.The non-volatility memorizer 500 of one embodiment of the invention is to be arranged on the substrate 200.The main element of non-volatility memorizer 500 comprises an insulating barrier 202, is arranged on the substrate 200.One lower conductiving layer 207 is arranged on the insulating barrier 202.One resistance transition layer 208 is arranged on the lower conductiving layer 207.One oxygen lacks resilient coating (oxygen vacancy barrier layer) 210, is arranged on the resistance transition layer 208.Conductive layer 212 on one, are located at oxygen and lack on the resilient coating 210.In an embodiment of the present invention, resistance transition layer 208 is the double-deck sull structure 209 of common formation non-volatility memorizer 500 with the scarce resilient coating 210 of the oxygen on it.
In one embodiment of this invention, substrate 200 can comprise silicon substrate.Insulating barrier 202 can comprise silica membrane, and its thickness can be between between the 100nm to 500nm.Lower conductiving layer 207 can be two metal layers and stacks the composite bed that forms with as hearth electrode; Shown in Fig. 1 a; Lower conductiving layer 207 can comprise a titanium (Titanium of lower floor; Ti) film 204 and upper strata platinum (Platinum, Pt) film 206, the thickness of above-mentioned lower conductiving layer 207 can be between between the 10nm to 1000nm.Resistance transition layer 208 can comprise zirconium dioxide (ZrO
2) film, its thickness can be between between the 10nm to 1000nm.Oxygen lacks resilient coating 210 and can be the zirconium dioxide film with a metal oxide admixture, and wherein the metal oxide admixture comprises calcium oxide (CaO), magnesia (MgO), yittrium oxide (Y
2O
3) or combinations thereof, and the thickness of the scarce resilient coating 210 of oxygen can be between between the 1nm to 1000nm.The last conductive layer 212 that comprises titanium (Ti) film can be used as top electrode, and its thickness can be between between the 10nm to 1000nm.
Then will further specify the manufacturing approach of the non-volatility memorizer 500 of one embodiment of the invention.At first, a substrate 200 is provided, a silicon substrate for example, and it is carried out RCA (Radio Corporation of America) manufacturing process for cleaning.Afterwards, high temperature furnace pipe processing procedure capable of using, the silica membrane of on silicon substrate 200, growing up be as insulating barrier 202, and insulating barrier 202 is to be used for leakage current between isolated and the substrate 200.Then, electron beam vacuum evaporation capable of using (E-beam evaporation) or sputtering method (sputtering) form one deck titanium film 204 on insulating barrier 202.Similarly; Utilize another time electron beam vacuum evaporation (E-beam evaporation) or sputtering method (sputtering); On titanium film 204, form one deck platinum film 206, above-mentioned titanium film 204 is to form a lower conductiving layer 207 (can be considered hearth electrode 207) with platinum film 206.Then, AC magnetic controlled sputtering method capable of using (RF magnetron sputtering), a zirconium dioxide (ZrO grows up on platinum film 206
2) film is as resistance transition layer 208.In an embodiment of the present invention, for example, the growth temperature of the resistance transition layer 208 of zirconium dioxide film is about 2.63W/cm for being about 200 ℃, electricity slurry power density
2, operating pressure is about 10mTorr, gas flow is about 18sccm (argon gas (Ar): oxygen (O
2)=12: 6).
Next be the generation type that the oxygen of describing the non-volatility memorizer 500 of the embodiment of the invention lacks resilient coating 210.AC magnetic controlled sputtering method capable of using, the oxygen of on resistance transition layer 208, growing up lacks resilient coating 210, and it can comprise the zirconium dioxide film with metal oxide admixture, the zirconium dioxide (CaO:ZrO of the calcium oxide that for example mixes
2) film.In an embodiment of the present invention, the oxygen growth temperature that lacks resilient coating 210 is about 200 ℃, electricity slurry power density and is about 2.63W/cm
2, operating pressure is about 10mTorr, gas flow is about 18sccm (argon gas (Ar): oxygen (O
2)=12: 6).In other embodiment of the present invention, the metal oxide admixture that oxygen lacks resilient coating 210 can comprise magnesia (MgO), yittrium oxide (Y
2O
3) or combinations thereof.
At last, electron beam evaporation plating method capable of using and by the area of metal light shield definition top electrode with form the position, to lack the platinum/titanium metal thin film of growing up on the resilient coating 210 in oxygen as last conductive layer 212 (can be considered top electrode 212).Through after the above-mentioned processing procedure, form the non-volatility memorizer 500 of one embodiment of the invention.
Fig. 1 b system is the generalized section of the non-volatility memorizer 600 of comparative example.The oxygen that the non-volatility memorizer 600 that the non-volatility memorizer 600 of comparative example and not existing together of the non-volatility memorizer 500 of one embodiment of the invention are merely comparative example does not have the zirconium dioxide film of doping calcium oxide lacks resilient coating 208; Therefore; The top electrode 212 of the non-volatility memorizer 600 of comparative example is directly grown up on resistance transition layer 208, and all the other elements all non-volatility memorizer 500 with one embodiment of the invention are identical.
Fig. 2 a is the electric current and voltage measurement of the non-volatility memorizer 500 of one embodiment of the invention.Shown in Fig. 2 a; When the non-volatility memorizer 500 to the embodiment of the invention is just applying (bearing) Dc bias; Electric current can increase and increase along with voltage, and when electric current rises to cut-off current (5mA), its bias voltage is for forming voltage (forming voltage); Usually need bigger bias voltage, this moment is by reset condition (original state; O-state) be transformed into low resistance state (low resistance state; LRS, or can be described as ON-state).Then; When the non-volatility memorizer 500 of the embodiment of the invention is bestowed the voltage of erasing (turn-off voltage) of negative bias; Element current begins to descend during pact-12V; The rapid current value originally that drops to of electric current when-2V, this moment low resistance state the electric current transition to high resistance state (high resistance state; HRS, or can be described as OFF-state).Then; To the non-volatility memorizer 500 of the embodiment of the invention bestow negative bias write voltage (turn-onvoltage) time; Electric current can increase and increase along with voltage; Arrive current limitation value (5mA) during pact-3V, this moment, high resistance state was converted to low resistance state, and this repeatedly repetitive operation of resistance transfer characteristic.That is our size that can utilize control to bestow bias voltage makes conversion that the non-volatility memorizer 500 of the embodiment of the invention has a resistance to reach storage purpose; Under no additional power source supply; High low resistance state all can be kept its storage attitude, can be used for the application of non-volatility memorizer.It should be noted that; Shown in Fig. 2 a; Non-volatility memorizer 500 its voltages of erasing (turn-off voltage) of the embodiment of the invention are about-1.5V, are about-3V and write voltage (turn-on voltage), are negative value voltage; Characteristic with monolateral resistance transition (unipolar resistive switching behavior) is fit to the resistance-type non-volatility memorizer that matched diodes (diode) is formed 1D1R.
Fig. 2 b is the electric current and voltage measurement of the non-volatility memorizer 600 of comparative example.This element is bestowed erasing during voltage of negative bias, and element current begins to descend during pact-14V, the rapid current value originally that drops to of electric current when-2V, this moment low resistance state the electric current transition to high resistance state; To this element bestow negative bias write voltage the time, electric current can increase and increase along with voltage, arrives current limitation value (5mA) during pact-3V, high resistance state is converted to low resistance state at this moment, and this resistance transfer characteristic can repetitive operation.Show that by the result non-volatility memorizer 600 of comparative example and the non-volatility memorizer 500 of the embodiment of the invention have similar current-voltage characteristic, so non-volatility memorizer 600 also has the characteristic of monolateral resistance transition.But show that through the durability degree test non-volatility memorizer 500 with the scarce resilient coating of oxygen has more outstanding durability degree characteristic, above-mentioned durability degree test result is 3a to 6 figure and the relevant narration of stating after being shown in.
The non-volatility memorizer 500 of the embodiment of the invention resistance transition mechanism system be described below.Shown in Fig. 1 a; The zirconium dioxide resistance transition layer 208 of the non-volatility memorizer 500 of the embodiment of the invention is the double-deck sull structure 209 of common formation with the scarce resilient coating 210 of the oxygen on it; Wherein the scarce resilient coating 210 of oxygen for example can be the zirconium dioxide film with metal oxide admixture, comprises calcium oxide (CaO), magnesia (MgO), yittrium oxide (Y
2O
3) metal oxide admixture system as the stabilizer (stabilizer) of zirconium dioxide; Cube crystalline substance (cubic) of high temperature mutually and does not take place to change mutually with variations in temperature and the variation of volume produces rhegma so that the crystalline state of zirconium dioxide can maintain when cooling; Thereby can promote the electric and mechanical property that oxygen lacks resilient coating; On the other hand, these admixtures can be adjusted the concentration that control zirconium dioxide oxygen lacks the room, make it have preferable ionic conductivity and excellent mechanical strength.For example for the metal oxide admixture of calcium oxide (CaO) can provide oxygen-containing vacancy (oxygen vacancy), its defect chemistry reaction equation (1) is:
Every doping one is ear calcium oxide (CaO) not, just makes an ear oxygen-containing vacancy not.Therefore, the oxonium ion that the oxygen of the embodiment of the invention lacks in the resilient coating 210 can spread by above-mentioned oxygen-containing vacancy, thereby can obtain good ionic conductivity.
Fig. 3 a is durability degree test (endurance test) figure of the non-volatility memorizer 500 of the embodiment of the invention.Above-mentioned durability degree test condition gives ground connection (GND) for the lower conductiving layer 207 that the last conductive layer 212 to non-volatility memorizer 500 gives bias voltage and non-volatility memorizer 500; High resistance state (HRS wherein; Be listed as OFF-state in the drawings) and low resistance state (LRS; Be listed as ON-state in the drawings) current values under-continuous transition operating condition that the 0.3V bias voltage reads all; The non-volatility memorizer 500 of the embodiment of the invention is under the continuous transition operation that surpasses more than 400 times; The resistance ratio of high resistance state and low resistance state is still possessed 100 times, and its demonstration has the embodiment of the invention and has the non-volatility memorizer 500 that oxygen lacks resilient coating and have outstanding durability degree characteristic.
The durability degree resolution chart of the non-volatility memorizer 600 of Fig. 3 b comparative example.Above-mentioned durability degree measuring condition is identical with the described measuring condition of Fig. 3 a.Shown in Fig. 3 b, the non-volatility memorizer 600 of comparative example is under 12 times continuous transition operation, and high resistance state (HRS is listed as OFF-state in the drawings) is still possessed 100 times with the resistance ratio of low resistance state (LRS is listed as ON-state in the drawings).But can obviously find out by 3a and 3b figure; The transition number of times of the non-volatility memorizer 500 of the embodiment of the invention has more more than 35 times compared to the non-volatility memorizer 600 of comparative example, so the oxygen of the zirconium dioxide film with doping calcium oxide of the embodiment of the invention lacks durability degree and stability that the non-volatility memorizer 500 of resilient coating can significantly increase monolateral operation.
Fig. 4 is the storage power test of the non-volatility memorizer 500 of the embodiment of the invention; It also utilizes-erase voltage and the-3V of 1.5V write voltage with non-volatility memorizer 500 transition to low resistance memory state and high resistance memory state respectively; Read low resistance memory state (LRS with-0.3V voltage afterwards; Be listed as ON-state in the drawings) and high resistance memory state (HRS; Be listed as OFF-state in the drawings) the current values of two storage attitudes, placing 1 * 10
6After second, still can correctly read data and not have any storage characteristics deterioration generation, and the resistance ratio between high resistance memory state and the low resistance memory state is all greater than 1000 times.
Figure 5 embodiment of the invention a non-volatile memory 500 to read a non-destructive test, the first use of the use-1.5V-3V for erasing voltage and writing voltage pulse, respectively, the non-volatile memory 500 transitions to a low Resistance to the high resistance memory state, then the voltage of-0.3V to continuously read the low resistance memory state (LRS, shown in the figure is ON-state) to the high resistance memory state (HRS, shown in the figure is OFF- state) of the two-state resistance value of the storage state, either at room temperature (in the figure shown as RT) or under high temperature condition of 150 ℃ in a continuous read past 10000 second case, the present embodiment of the invention a non- The volatile memory 500 stores a low resistance state to the high resistance 800 times greater than the remain discrimination, without generating any storage characteristics deteriorate.
Fig. 6 is the potential pulse durability degree resolution chart of the non-volatility memorizer 500 of the embodiment of the invention, and it is in order to the durability degree of test non-volatility memorizer under high speed (short pulse time) operation.The test condition of pulse durability degree writes potential pulse for the top electrode of non-volatility memorizer 500 is bestowed one; Its pulse duration with highly be respectively 50ns and-6V; Therefore; The store status of non-volatility memorizer 500 is converted to low resistance state by high resistance state (HRS is listed as OFF-state in the drawings).Then, again the top electrode of non-volatility memorizer 500 is bestowed the potential pulse of erasing, its pulse duration with highly be respectively 50ns and-4V, the store status that meaning is about to non-volatility memorizer 500 is converted to high resistance state by low resistance state.Process as shown in Figure 6 is above-mentioned write with the application of erase voltage pulses condition under the durability degree test result show that the non-volatility memorizer 500 of the embodiment of the invention can surpass 200 times in continued operation, and have the resistance transition characteristic of (50ns) at a high speed.
As previously mentioned, the metal oxide admixture that the oxygen of the embodiment of the invention lacks resilient coating 210 is as stabilizer (stabilizer) and oxygen-containing vacancy is provided, and the metal oxide admixture is relevant with temperature and pressure in the solubility system that oxygen lacks in the resilient coating 210.With regard to the position that improves ionic conductivity, stabilizer can dissolve fully, and produces low concentration defective (oxygen vacancy), promptly is unlikely between defective in the interactional scope, and oxygen-containing vacancy concentration is higher, and ionic conductivity better.Therefore, oxygen lacks the ionic conductivity that the content of metal oxide admixture in the resilient coating 210 can change itself, thereby can influence the reliability of non-volatility memorizer 500.
The oxygen of the content with different metal oxides admixture of the 1st table embodiment of the invention lacks the reliability test result of the non-volatility memorizer 500 of resilient coating 210.
The non-volatility memorizer 500 that shows at the 1st tabular is the zirconium dioxide (CaO:ZrO that uses the doping calcium oxide
2) film lacks resilient coating 210 as oxygen.Shown in the 1st table result, the content of metal oxide admixture all is superior to existing non-volatility memorizer (0mol%) between the durability degree that the oxygen between the ear concentration 1 to 2mol% not lacks resilient coating 210.And have ear concentration not is that to lack resilient coating 210 be as comparative example for the oxygen of the metal oxide admixture of 2.8mol%.
The non-volatility memorizer 500 of the embodiment of the invention is to utilize noble metal as bottom electrode; Follow-up growth zirconium dioxide film is as resistance transition layer; And utilize the zirconium dioxide film of doping calcium oxide (CaO) to lack resilient coating (oxygenvacancy barrier layer), the zirconium dioxide (CaO:ZrO of the calcium oxide that wherein mixes as oxygen
2) but the oxygen that constitutes of the film content that lacks resilient coating mat calcium oxide regulates and control the concentration of its oxygen-containing vacancy (oxygen vacancy) (the defect chemistry reaction equation of the zirconium dioxide of doping calcium oxide does
, the interpolation calcium oxide also can add magnesia (MgO) or yittrium oxide (Y except that regulating and control
2O
3) reach.And utilize the reactive metal titanium to be used as top electrode; The oxygen (oxygen getter) that is prone to capture in the oxide because of titanium can change memory film inner oxygen condition and distribution thereof; Can component resistance transition characteristic be confined to oxygen and lack near the resilient coating, and the variation that comes control operation parameter (operational parameters) is in extremely narrow scope.The method can significantly promote the durability degree and stability of monolateral operation compared to the resistance-type non-volatile memory component that uses other kind of structure, and the double-deck stacking structure of this kind is more suitable in the application of resistance-type non-volatility memorizer.
Though the present invention discloses as above with various embodiment; So it is not in order to limit scope of the present invention; Any person of ordinary skill in the field; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention when with claim scope of the present invention the person of being defined be as the criterion.
Claims (10)
1. a non-volatility memorizer is characterized in that, described non-volatility memorizer comprises:
One lower conductiving layer;
One resistance transition layer is arranged on the described lower conductiving layer;
One oxygen lacks resilient coating, is arranged on the described resistance transition layer; And
Conductive layer on one is arranged at described oxygen and lacks on the resilient coating.
2. non-volatility memorizer as claimed in claim 1 is characterized in that, described non-volatility memorizer more comprises:
One substrate is arranged at the below of described lower conductiving layer; And
One insulating barrier is arranged between described lower conductiving layer and the described substrate.
3. non-volatility memorizer as claimed in claim 1 is characterized in that, described lower conductiving layer is a platinum.
4. non-volatility memorizer as claimed in claim 1 is characterized in that, the described conductive layer of going up comprises titanium, titanium nitride or combinations thereof.
5. non-volatility memorizer as claimed in claim 2 is characterized in that, described insulating barrier is a silica membrane.
6. non-volatility memorizer as claimed in claim 1 is characterized in that, described resistance transition layer is the zirconium dioxide film.
7. non-volatility memorizer as claimed in claim 1 is characterized in that, described oxygen lacks resilient coating and comprises the zirconium dioxide film with a metal oxide admixture.
8. non-volatility memorizer as claimed in claim 7 is characterized in that, described metal oxide admixture comprises calcium oxide, magnesia, yittrium oxide or combinations thereof.
9. non-volatility memorizer as claimed in claim 7 is characterized in that the content of described metal oxide admixture is between between the 1mol% to 2mol%.
10. non-volatility memorizer as claimed in claim 1; It is characterized in that, when described non-volatility memorizer is applied a formation voltage, can in described resistance transition layer, form a conductive path; Make described non-volatility memorizer be transformed into a low resistance state from a reset condition; And wherein erase voltage during, can interrupt the described conductive path of described resistance transition layer, make described non-volatility memorizer be transformed into a high resistance state from described low resistance state in described non-volatility memorizer when applying one; Wherein said formation voltage and the described voltage of erasing are all negative value, belong to monolateral resistance transition.
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| CN103904212A (en) * | 2012-12-26 | 2014-07-02 | 华邦电子股份有限公司 | Non-volatile memory |
| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN109920908A (en) * | 2017-12-13 | 2019-06-21 | 北京有色金属研究总院 | A kind of resistance-variable storing device and preparation method thereof with ultra-thin changing function layer |
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| US20020084480A1 (en) * | 2000-08-31 | 2002-07-04 | Cem Basceri | Top electrode in a strongly oxidizing environment |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904212A (en) * | 2012-12-26 | 2014-07-02 | 华邦电子股份有限公司 | Non-volatile memory |
| CN103904212B (en) * | 2012-12-26 | 2016-08-10 | 华邦电子股份有限公司 | Non-volatility memorizer |
| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN106098932B (en) * | 2016-06-16 | 2019-01-15 | 北京大学 | A kind of linearly gradual memristor and preparation method thereof |
| CN109920908A (en) * | 2017-12-13 | 2019-06-21 | 北京有色金属研究总院 | A kind of resistance-variable storing device and preparation method thereof with ultra-thin changing function layer |
| CN109920908B (en) * | 2017-12-13 | 2023-07-11 | 有研工程技术研究院有限公司 | Resistive random access memory with ultrathin conversion function layer and preparation method thereof |
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| CN102646790B (en) | 2014-06-04 |
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