CN102640314A - Coupling structure and method of forming such - Google Patents
Coupling structure and method of forming such Download PDFInfo
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- CN102640314A CN102640314A CN2010800552276A CN201080055227A CN102640314A CN 102640314 A CN102640314 A CN 102640314A CN 2010800552276 A CN2010800552276 A CN 2010800552276A CN 201080055227 A CN201080055227 A CN 201080055227A CN 102640314 A CN102640314 A CN 102640314A
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- 230000008878 coupling Effects 0.000 title abstract description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
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- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
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- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
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- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/10—Adjustable resistors adjustable by mechanical pressure or force
- H01C10/103—Adjustable resistors adjustable by mechanical pressure or force by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator
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Abstract
A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiff ener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.
Description
Technical field
Present invention relates in general to IC-components, and more specifically, relate to the coupled structure that is used for the stress that piezoelectric produces is coupled to the device that is formed at integrated circuit.
Background technology
Complementary field-effect transist (FET) is supported the current criterion calculation machine architecture (computer architecture) that in logic (logic) and storage (memory), uses (CMOS).FET utilizes high raceway groove (channel) mobility (mobility) to come with the few electron current (few-carrier current) of electrostatic means control.But aspect the current and following device scale, the limitation in the successful technology of this height just displays.
More particularly, in the difficulty aspect the scalable property (scalability) owing to short-channel effect and few dopant fluctuation effect (few-dopant fluctuation effect) produce.HfO
2The mobility that gate oxide short channel scheme causes clock speed is constantly slowed down limits (Moore's Law bi-directional scaling (scaling) becomes negative).Wherein grid capacitance corresponding to gate area but wherein electric current (cause speed～l/L corresponding to channel width/channel length
2) disadvantageous FET geometry mean that FET is the device of relative high impedance.Therefore, the application examples of " high power consumption (power hungry) " as the PCM memory is programmed, is driven long circuit or for inactive circuit block powered-down in need desirably not large-area FET.
In CMOS, setting up sandwich construction is that expectation is still very complicated, because need all FET in monocrystalline silicon, to form.Wherein directly photoetching process (the straightforward lithographic process) new technology that can set up sandwich construction can be opened the new application of far reaching, for example high power capacity multilayer memory and for reducing logic and the combination of storage on the varying level that line length optimizes.
Summary of the invention
In an illustrative embodiments; The coupled structure that is used for the stress that piezoelectric produces is coupled to the actuation device (actutated device) of integrated circuit comprises: be formed on firm (rigid) rigid body (stiffener) structure around piezoelectricity (PE) material and the said actuation device, said actuation device comprises having pressure drag (PR) material that depends on the resistance that is applied to the pressure on it; With the buffer structure that is formed on said PE material and PR material soft (soft) on every side; Said buffer structure is arranged between said PE and PR material and the said rigid body structure; Wherein for said PE and the substrate formed thereon of PR material; Said rigid body structure is clamped (clamp) said PE and PR material; And wherein said soft buffer structure allows the freedom of said PE material with respect to said PR material movement, will be coupled to said PR material to change the resistance of said PR material by the stress that the voltage that applies to said PE material produces thus.
In another embodiment; Be used for the coupled structure that the stress that piezoelectric produces is coupled in piezoelectric effect transistor (PET) device that is formed on integrated circuit is comprised: be formed on PET device firm rigid body structure on every side; Said PET device further comprises piezoelectricity (PE) material that is arranged between first and second electrodes and is arranged on pressure drag (PR) material between said second electrode and the third electrode; Wherein said first electrode comprises gate terminal; Said second electrode comprises public (common) terminal; And said third electrode comprises lead-out terminal, make through by said PE material to said PR material applied pressure, the resistance of said PR material depends on crosses over the voltage that said PE material applies; With the soft buffer structure that is formed on around the said PET device; Said buffer structure is arranged between said PE and PR material and the said rigid body structure; Wherein for said PE and the substrate formed thereon of PR material; Said rigid body structure is clamped said PE and PR material; And wherein said soft buffer structure allows the freedom of said PE material with respect to said PR material movement, will be coupled to said PR material to change the resistance of said PR material by the stress that the voltage that applies to said PE material produces thus.
In another execution mode, the method that is formed for the stress that piezoelectric produces is coupled to the coupled structure in piezoelectric effect transistor (PET) device of integrated circuit comprises: first deposition of in substrate, carrying out firm rigid body structural material; Form the lower electrode of said PET device; On first deposit of said lower electrode and said firm rigid body structural material, carry out second deposition of said firm rigid body structural material; Carry out first deposition of soft buffer structure material in second deposit of said firm rigid body structural material and on the top at said lower electrode; Form piezoelectricity (PE) material of said PET device in first deposit of said soft buffer structure material and on the top at said lower electrode; Carry out second deposition of said soft buffer structure material in the 3rd deposition of carrying out said firm rigid body structural material on second deposit of said firm rigid body structural material with on first deposit of said soft buffer structure material; On said PE material, form the public electrode of said PET device; Carry out the 3rd deposition of said soft buffer structure material in the 4th deposition of carrying out said firm rigid body structural material on the 3rd deposit of said firm rigid body structural material with on second deposit of said soft buffer structure material and said public electrode; Form pressure drag (PR) material of said PET device in the 3rd deposit of said soft buffer structure material and on the top at said public electrode; On the 3rd deposit of the 4th deposit of said firm rigid body structural material, said soft buffer structure material and said PR material, carry out the 5th deposition of said firm rigid body structural material; With on said PR material, form top electrodes.
Description of drawings
Reference example property accompanying drawing, wherein components identical is carried out mark in the same manner in following a few width of cloth figure:
Fig. 1 (a) and 1 (b) are the sketch mapes that is suitable for according to exemplary piezoelectric effect transistor (PET) device of embodiment of the present invention use;
Fig. 2 is the figure of explanation pressure to the electrical resistance property of selenizing samarium (SmSe);
Fig. 3 (a) explains the molecular structure of the photoconductive derivatives of porphyrin that is called as ZnODEP;
Fig. 3 (b) explains that photoelectric current is with the figure of variable in distance between the compression period of ZnODEP film;
Fig. 4 is the schematic cross section according to another execution mode of the PET device of embodiment of the present invention, and said PET device has PCM or the PR coupled structure partly that is used for the stress that piezoelectric produces is coupled to said PET device;
Fig. 5 (a)～5 (c) explains the mechanics software pressure simulation for the PET device of Fig. 4 and coupled structure;
Fig. 6 is the more detailed view that the simulated pressure in the PR material distributes;
Fig. 7 is the dependent figure of explanation pressure to PCM or PR material thickness;
Fig. 8 (a) and 8 (b) are the cross-sectional views of mechanical model that explanation is used for the stress that piezoelectricity produces is coupled to the C shape coupled structure of PR layer;
Fig. 9 (a)～9 (l) is the cross-sectional view of illustrative methods of formation PET device and the relevant coupled structure of explanation further execution mode according to the present invention;
Figure 10 (a)～10 (e) is the cross sectional top view that the exemplary sidewall of the rigid body structure of explanation further execution mode according to the present invention is arranged; With
Figure 11 (a)～11 (f) explains the top cap layer (capping layer) of the sidewall arrangement top of the rigid body structure that is arranged in Figure 10 (a)～10 (e).
Embodiment
Herein disclosed is the coupled structure that is used for the stress that piezoelectric produces is coupled to the actuation device that is formed on integrated circuit.In the exemplary embodiment, such actuation device can be for example by the device that forms because of the material that presents phase transformation or resistance variations to its stress that applies that is derived from piezoelectric.An instantiation of actuation device can be the nonvolatile memory that combines phase-change material (PCM), and wherein the piezoelectric effect transistor has the pressure drag material that drives through voltage-controlled piezoelectric.
Piezoelectricity (PE) material depends on the polarity of crossing over the voltage that it applied and expands or shrink.Pressure drag (PR) material is pressure-sensitive, because depend on its compression, it can have high or low resistance.For example, with PE material and PR material with the expansion that allows the PE material with shrink with the mode the PR material being compressed and reduce pressure and put the sensitive switch (sensitive switch) that (juxtaposition) causes wherein can controlling through the voltage that changes the said PE material of leap the resistance in the said PR material.More particularly, three terminal devices (one of them terminal is connected to the thin metal layer between PE and PR, and another is connected to distally and the 3rd distally that is connected to PR of PE) form the crystal tubular switch (switch) that can be used for logic and memory function.Hereinafter, this device is called piezoelectric effect transistor or PET.
For the expected performance of the device that obtains this Piezoelectric Driving, should be coupled to PR/PCM effectively through apply the stress that little voltage produces to said PE material, to cause the resistance variations of its desired.In brief, disclose coupled structure and the correlation technique that forms coupled structure, wherein said coupled structure has combined the firm rigid body structure of high modulus material.Said high modulus material be formed on around the PET device and substrate (like silicon) and PE/PR (or PCM) lamination on, and soft (low modulus) material or air gap (air gap) are arranged between said rigid body and the said PET device.In operation, for said substrate (said PET is formed in the said substrate), said rigid body structure is clamped said PET device, with the PE that retrains said PET device and the total deformation of PR material.In addition, the said soft material or the air gap that are arranged between said PET device and the said rigid body give the freedom of said PE material with respect to other device material motion.Like this, the stress that is produced by the voltage that applies to said PE material can be used to drive PCM or pressure drag material effectively to obtain high-performance.The exemplary high modulus material that can be used for said rigid body comprises silicon nitride (SiN) and tungsten (W), and the exemplary low-modulus material that is used for buffering area can comprise low-k materials such as SiCOH, or can comprise air gap.
Before describing said coupled structure in more detail, the exemplary PET device that is suitable for according to the embodiment of the present invention use is discussed at first.
At first with reference to figure 1 (a) and 1 (b), wherein shown respectively sketch map with n-type structure and the PET device 100 of p-type structure demonstration, with and three terminal symbolic notations.Said PET device 100 characterizes (Fig. 1) through sandwich; Wherein PE material 102 is clipped between the pair of electrodes, and first electrode of said pair of electrodes representes that second electrode of PE electrode 104 or " grid " (control) terminal and said pair of electrodes representes public electrode 106.In addition, PR material 108 is clipped between public electrode 106 and the third electrode, and said third electrode is represented output electrode 110.
In three terminals that in Fig. 1 (a) and 1 (b), show, the 5 layers of PET device 100; Output electrode 110 comprises that metal level (for example; The about 10-20 nanometer of thickness (nm)); Said metal level is used as such conductor: have only PR material 108 to be in " ON (opening) " or low resistance state, significant electric current can pass through said conductor.Public electrode 106 comprises another metal level, and it is that appropriateness is flexible, with PE material 102 applied pressures of transmission by its below.This intermediate metal layer is as transistorized public terminal.Said PE electrode or gate electrode 104 comprise another metal level (for example, the about 10-20nm of thickness), apply program voltage through said another metal level to PE layer 102.Therefore, in conductor/PE/ conductor/PR/ conductor sandwich, each conductor electrode also provides the barrier layer of the diffusion of the said PE/PR material of opposing.As also shown in Fig. 1 (a) and 1 (b) ,+/-mark describe be: the electricity of supposing said PR is led with pressure and is increased, and is applied to the piezoelectric polarization of PE layer 102 in order to make said PR layer 108 be in low resistance " ON " state.(polarity adjustment poling) is set up the signal of (set) said PE layer to the response of the voltage of crossing over it (expand or shrink) in the step in polarization during processing.About the formation of the n-type PET (Fig. 1 (a)) relative, through with the polarization reversal of piezoelectricity and with the driving stage sex reversal with p-type PET (Fig. 1 (b)).
In general, the exemplary height of PET device 100 is about 35-120nm, on the x-y plane, has the size of about 45-90nm.In addition, but PET device 100 is bi-directional scaling (scalable), and does not have the many problems relevant with conventional FET bi-directional scaling.For example, the conveying of charge carrier strengthens through the favourable geometry of said PET, because electric current laterally flows through thin raceway groove film (rather than as among the FET, longitudinally flowing through).In addition, there is not short-channel effect, because the influence that input is not exported through public electrode.Because said PET do not have the uneven problem of dopant, thus its to compare with FET be more insensitive to impurity/geometry, this is owing to short mean free path and the effective shielding that is caused by the high density charge carrier.Said PET should have and the performance of FET similar performance (as described in more detail below) in theory, and allows ON impedance low under very little yardstick.
Piezoelectricity (PE) and pressure drag (PR) material
Fig. 2 be explanation pressure to the figure of the electrical resistance property of selenizing samarium (SmSe), said selenizing samarium is a suitable example of the PR material that can in said PET device, use.As can find out that SmSe is a semiconductor, and under the pressure of about 4GPa, is transformed into the metal phase continuously under normal pressure, and have significantly big conductivity variations (about 5 one magnitude), even also be like this at about 2GPa.Though embodiment of the present invention can advantageously be utilized the continuous conductivity variations with respect to pressure of SmSe type material, consider that also discontinuous transition material also can be used in the said PR layer in the PET device.The instance of back one type is presented among Fig. 3 (a), and its explanation is called the molecular structure of the photoconductive derivatives of porphyrin of ZnODEP.Fig. 3 (b) explains that photoelectric current is with the figure of variable in distance between the compression period of ZnODEP film.
Expectation use continuous transition material for example SmSe pressurizeing and their rate of transformation can be basically through velocity of sound control reversiblely, and because their material degeneration (degradation) that circulation causes should be minimum.But also to have the use of material of continuous transformation be effective in expection.The experience insulator includes but not limited to other instances of the possible PR material of metallic transition under applied pressure: EuNiO
3, Ni (S, Se)
2, six side BaTiO
3-δ, InSb and (2,5DM-DCNQI)
2Cu.
About the suitable PE material of being considered that in disclosed PET device execution mode, uses, known piezoelectric comprises: piezoelectric modulus (d for example
33) be positioned at lead zirconate titanate (PZT), strontium doping lead zirconate titanate (PSZT), PSN-PMN-PNN-PSZT, PZNT 91/9 and PMNT70/30 [the Y. J.Yamashita and the Y.Hosono of about 200-1500pm/V scope; Jap.J.Appl.Phys.43,6679-6682 (2004)].
PET with coupled structure
With reference now to Fig. 4,, wherein shown have relevant coupled structure, totally with the schematic cross section of another execution mode of the PET device of 400 expressions.For simplicity, come comfortable Fig. 1 (a) in follow-up figure, to use with the identical Reference numeral of the middle PET element of describing of 1 (b).Notice that the cross-sectional area of the PR element 108 in illustrated execution mode is less than the cross-sectional area of PE element 102.As also shown in Fig. 4, PET device (comprising PE element 102, PR element 108 and electrode 104,106,110) is formed on substrate 401 for example on the silicon.For illustrative purposes, also shown insulation layer 402 (silicon dioxide (SiO for example
2)).
But, though should be noted that the illustrative embodiments of describing silicon base has been described, also can utilize other substrate, as long as the manufacturing of said PET device and relevant coupled structure and traditional CMOS last part technology (back-end-of-line) method compatibility.Though said manufacturing also can with traditional CMOS FEOL (front-end-of-line) method (being in the execution mode of silicon for example) compatibility in illustrated wherein substrate 401; But again; Be different from use under the situation of substrate of silicon, such device can selectively only use the manufacturing of CMOS last part technology method.
Like what further show among Fig. 4, said PET device is comprised by high Young's modulus (E) material (silicon nitride (Si for example
3N
4) or tungsten (W)) coupled structure of the rigid body structure 404 that forms surrounds.In the exemplary embodiment, the high Young's modulus material can be about 60 gigapascals (GPa) or bigger, and more particularly is about 100 GPa or bigger.The value that this of E is high has relatively guaranteed the displacement bimorph of PE element 102 is transferred to PR element 108, rather than is transferred to surrounding medium such as insulation layer 402 or substrate 401.Soft (low Young's modulus) storeroom parting 406 is set, perhaps air gap alternatively between rigid body structure 404 and said PET device.In the exemplary embodiment, soft spacer material 406 has about 20GPa or littler and more particularly about 10GPa or littler low Young's modulus.Such material can be for example SiCOH.
In operation, for substrate 401 (said PET is formed in the said substrate), rigid body structure 404 is clamped said PET device, with the PE that retrains said PET device respectively and the total deformation of PR material 102,108.In addition, the soft storeroom parting 406 or the air gap that are arranged between said PET device and the rigid body structure 404 give the freedom of said PE material 102 with respect to other device material motion.
For simplicity, only consider the z component of stress/strain and electric field, and the end face and the bottom surface of device 400 is that rigidity is installed among hypothesis Fig. 4, then because the field E of the leap PE element 102 on the z direction
zThe pressure rising P of the leap PR element 108 that causes
PRProvide by following expression:
E wherein
zBe the electric field on the z direction, E representes the Young's modulus (E of point element
PROr E
PE), t representes the thickness (t that is parallel to the z axle of point element
PROr t
PE), A representes the surface area (A perpendicular to the z axle of point element
PROr A
PE), and d
33The zz component of representing the piezoelectric coupling coefficient of said PE material.Usage example property value E
PR=E
PE≈ 40GPa, t
PR/ t
PR≈ 1/5, area compare A
PR/ A
PE≈ 1/4, d
33The rational electric field of=0.6nm/V and 0.02V/nm, said pressure rises to about 1GPa.In the PE thickness t
PEUnder the situation of=50nm, the voltage that applies will be about 1 volt.As will find out from the more detailed simulation of following discussion, use d
33The piezoelectric of=0.37nm/V can reach 0.6GPa (driving voltage 1.6V), uses d
33The PE material of=0.94nm/V for example PSN-PMN-PNN-PSZT will be increased to 1.5GPa in proportion.On the contrary, use organic PR material such as ZnODEP, pressure that only need about 0.22GPa, and the low-power operation under the low driving pressure that reaches 0.24V is possible.
The simulation of pressure unit (pressure cell)
With reference now to Fig. 5 (a),, the exemplary PET configuration with relevant coupled apparatus 400 is used for using from ANSYS, and the engineering simulation software of Inc carries out mechanical simulation.Be presented at exemplary distance among Fig. 5 (a) in nanometer.Again; Except PET unit (cell) 5 layers of structure itself, model configuration 400 also comprises silicon base 401, surround soft spacer material (like the soft material of SiCOH or other process compatible) buffer structure 406 of said unit, surround said transistorized at the silicon nitride in the substrate 401 (SiN) folder (clamp) or cover (yoke) rigid body structure 404 and the silicon dioxide (SiO in SiN rigid body structure 404
2) district 402.The simulation material that is used for three metal levels 104,106,110 of said cellular construction is a tungsten, and the simulation material that is used for PE material 102 is d
33The lead zirconate titanate of=0.37nm/V (PZT-5A).Said size is by t
PE=80nm, t
PR=l0nm, A
PE=3600nm
2, A
PR=400nm
2Limit.
Nitride rigid body structure 404 has formed firm framework, make the electricity of PE material 102 cause displacement by Coupling with Mechanics to PR material 108 (and mainly concentrating) towards PR material 108.Tungsten forms conductive electrode (lead-in wire does not show), and also is that mechanics is firm, and low K buffer structure 406 (being soft material) does not significantly hinder the operation displacement.
Fig. 5 (b) shows the stress distribution of model configuration 400 when 1.6V being applied to PE material 102 (the gained electric field is 0.02V/nm).Notice that the contraction of PE element 102 (tension force) causes the expansion (negative pressure) of PR element 108, vice versa.To find out that from Fig. 5 (b) PE material 102 is in its lateral expansion (because its Poisson's ratio), and since the expansion that its voltage is induced exert pressure in its top side and bottom side.Because to a certain degree power is concentrated, as among Fig. 5 (b) and reflected in the pressure legend of Fig. 5 (c) that maximum pressure is in PR material 108.
Fig. 6 is the more detailed view that the simulated pressure in PR material 108 distributes.As will notice, it is therein that pressure looks quite even, and be about 0.6GPa.Fig. 7 is the dependent figure of this pressure of explanation to PR (PCM) material thickness (it is not crucial).If this result is converted (scale) in proportion to d
33The PE material of=0.94nm/V then obtains the pressure of the 1.5GPA in acceptable scope (regime).
Clamp usefulness (clamping) rigid body structure 404 about being used for what the stress that piezoelectricity produces was coupled to the PR layer, the simple mechanics models that helps further to understand the operation of this pressure unit is presented among Fig. 8 (a).Said model is only considered compression stress/strain.The parameter that is used for said model comprises: F=power, L=length, A=area, Y=Young's modulus, u=displacement, k=rigidity (stiffness), E=electric field and σ=stress.Coefficient/subscript of in said model, using comprises: f=framework/clip, c=PR, e=(piezoelectric element).Mechanics basis following formula like the C-clamp of demonstration among Figure 15 (a):
(equation 2)
(equation 3)
d
33E
3L
e＝u
e+u
c+u
f
(equation 4)
(equation 5)
If stress σ in being directed against said PR material
cThe denominator of expression formula of equation 5 in second rise two can temporarily ignore, then the pressure in the said PR material multiply by piezoelectricity the area of PCM is compared A
e/ A
c(above-described power concentrator effect).Second relative mechanical response of describing piezoelectricity and PR element, and the mechanical response effect of the 3rd describe environment (being modeled as the C clip).In the horizontal arm of clip, have curvature effect, it is left in the basket at this.In order in said PR material, to reach high strain (σ
c/ Y
c) (strain is that the dimensionless that drives the ability of phase transformation is measured), expectation be said PR material with respect to piezoelectricity and environment be that soft, concentrator area compares A
e/ A
cBe big, piezoelectricity thick and said environment has " sturdy (robust) " aspect ratio (wide to height) than PR material, sample then is opposite (high to wide).Fig. 8 (b) has explained similar analysis, only between piezoelectric element and PR material, inserts hard (like tungsten) T shape power concentrator.At power concentrator area big so that emitting in this activation configuration significantly under the situation of the risk of flexural deformation (distortion) such as this, the structure of the type can be expectation.In this example, the stress that applies to said PR material is according to following formula:
Therefore,, this power concentrator is made firm, said PR material is made little and/or made said piezoelectric element big in order to maximize the stress in the PR material.
Physical implementation and manufacturing
Fig. 9 (a)～9 (l) is that explanation forms the cross-sectional view like the illustrative methods of the PET device described among Fig. 4 and coupled structure.Illustrative methods described herein and existing C MOS process technology are compatible fully.Shown in Fig. 9 (a), substrate 401 (like silicon) has insulating barrier formed thereon 402 (like SiO
2), follow by rigid body material 404 (like SiN) (will form the final rigid body structure of said PET device) first the deposition.In Fig. 9 (b), with the part of said rigid body material 404 with photolithographicallpatterned (with planography way, lithographically) patterning and remove position with the lower electrode that limits said PET device.More particularly; Fig. 9 (b) has explained the diffusion impervious layer 902 (like Ti/TiN) that is formed on the insulating barrier 402, follow by the deposition of electrode metal (like W, Cu) and/or plating (plating) and as chemico-mechanical polishing as known in the art (CMP) to form lower electrode 104.
Then shown in Fig. 9 (c), second deposition of SiN rigid body material 404 covers lower electrode 104, to roughly with the corresponding thickness of height of the PE material of said PET device.Shown in Fig. 9 (d), use patterning step the part of said rigid body material is opened to the top of lower electrode 104 downwards, be deposition and CMP afterwards with the soft buffer structure material 406 that surrounds said PET unit.Again, in the exemplary embodiment, said soft buffer structure material is SiCOH, although for example also can use air gap.Shown in Fig. 9 (e), use another patterning step to open buffer structure material 406 then, be used to form another diffusion impervious layer 904 and the PE material (like PSZT) on it.
With reference now to Fig. 9 (f),, the 3rd deposition of SiN rigid body material 404 is set up roughly corresponding with the thickness of the public electrode that is used for said PET device other height.As also shown in Fig. 9 (f), then will this other SiN patterning and open deposition and the CMP that above PE material 102, carries out other soft buffer structure material 406 to allow.Then, shown in Fig. 9 (g), the part of soft buffer structure material 406 and SiN rigid body material 104 is carried out patterning and removed to promote another diffusion impervious layer 906 and the deposition and/or the plating that are used for the metal of public electrode 106.
Continue to 9 (h), the 4th deposition of SiN rigid body material 404 is set up roughly the corresponding other height of thickness with the PR phase-change material of said PET device.As also shown in Fig. 9 (h), then will this other SiN patterning and open to allow above said public electrode 106, to carry out the deposition and the CMP of other soft buffer structure material 406.At this some place, can carry out patterning step then to be formed for contacting the through hole of bottom electrode 104 and public electrode 106.Like what in Fig. 9 (i), specify, barrier layer 908 formed with bottom electrode 104 with conductive stud (stud) (for example, the through hole of W filling) 910 contact with public electrode 106.Then,, use another patterning step, on public electrode 106, form barrier layer 912 and PR element 108 subsequently in the top part of soft buffer structure material 406, to limit opening like what show among Fig. 9 (j).PR element 108 can comprise the lamination of material (like SmSe, SmS etc.).PR element 108 or metal/PR lamination can comprise that also the middle lining (liner layer) (like Ti) for said PR material adheres to guarantee good mechanical.This PR material was shown as planarization in Fig. 9 (j) before formation contacts with its top.
In Fig. 9 (k), deposit another diffusion impervious layer 912 and with its patterning with contact PR element 108 and public and lower electrode double-screw bolt 910.At last, shown in Fig. 9 (1), five deposition of SiN rigid body material 404 on diffusion impervious layer 912 set up roughly corresponding with the thickness of the top electrodes that is used for said PET device other height.Then will this other SiN patterning and open deposition and CMP with the metal of the electrode 914 of the top electrodes 110 that allows to form said PET device and contact double-screw bolt 910.Light from this, can continue additional C MOS device fabrication as known in the art.
For example, describe in further detail and explain, can form cap layer (showing in Fig. 9 (1)) on the said device as following.Under expectation air gap or the situation of vacuum as said padded coaming, then can such cap layer be got through one or more access holes (access hole), feasible can be with said soft buffer structure material 406 etchings come out (etch out).In this case, said soft buffer structure material 406 will constitute expendable material.
Though said rigid body structure can have the sidewall that surrounds said PET device fully in the exemplary embodiment, also considers other replacement scheme.For example, Figure 10 (a) is the cross sectional top view that the sidewall of the rigid body structure 404 of surrounding PET device 100 and soft buffer structure 406 fully is described.On the contrary, Figure 10 (b) explains the sidewall arrangement that substitutes, and wherein PET device 100 is surrounded by the sidewall sections ground of rigid body structure 406 in its three side with soft buffer structure 406.In another embodiment, Figure 10 (c) and 10 (d) have described in its both sides by the PET device 100 and soft buffer structure 406 of the encirclement of the sidewall sections ground of rigid body structure 406.In the another execution mode of further considering, Figure 10 (e) is depicted in the PET device 100 and soft buffer structure 406 that the one of which side is surrounded by the sidewall sections ground of rigid body structure 406.Should further be noted that,, also can consider other sidewall shape, comprise for example rectangle, circle, ellipse etc. though the execution mode of Figure 10 (a) is illustrated as square structure substantially with the sidewall of rigid body structure 404.
Use air to replace SiCOH to be used under the situation of buffer structure 106 in for example expectation, Figure 11 (a)～11 (e) explains various cap layers/opening selection of arranging about the sidewall of Figure 10 (a)～10 (e) respectively.The top cap layer 1102 of relative high modulus material (like SiN or other suitable dielectric) is set on the sidewall of rigid body structure 404.In addition, in top cap, form one or more openings 1104 with the etching that allows expendable material with remove.To be noted that said opening is not directly on (center) of the said structure corresponding with the position of said PET device part, to form.In Figure 11 (f), for example wherein for example the material of SiCOH keep in the execution mode as said buffer structure material, cap layer 1102 is kept perfectly.
Though described the present invention, it will be understood by those skilled in the art that and to carry out various changes and can its key element substituted with equivalent and do not deviate from scope of the present invention with reference to preferred implementation.In addition, many improvement can be carried out so that concrete situation or material adapt to instruction of the present invention and do not deviate from its essential scope.Therefore, intention is, the invention is not restricted to the disclosed specific implementations of optimal mode considered as being used for embodiment of the present invention, but the present invention includes all execution modes within the scope of the appended claims.
Claims (27)
1. be used for the stress that piezoelectric produces is coupled to the coupled structure of the actuation device of integrated circuit, said structure comprises:
Be formed on piezoelectricity (PE) material and said actuation device firm rigid body structure on every side, said actuation device comprises having pressure drag (PR) material that depends on the resistance that is applied to the pressure on it; With
Be formed on said PE material and PR material soft buffer structure on every side; Said buffer structure is arranged between said PE and PR material and the said rigid body structure; Wherein for said PE and the substrate formed thereon of PR material; Said rigid body structure is clamped said PE and PR material; And wherein said soft buffer structure allows the freedom of said PE material with respect to said PR material movement, will be coupled to said PR material to change the resistance of said PR material by the stress that the voltage that applies to said PE material produces thus.
2. the coupled structure of claim 1, wherein said rigid body structure comprise the material with about 60GPa or bigger Young's modulus.
3. the coupled structure of claim 1, wherein said rigid body structure comprise the material with about 100GPa or bigger Young's modulus.
4. claim 1,2 or 3 coupled structure, wherein said rigid body structural material is selected from silicon nitride and tungsten.
5. each coupled structure of aforementioned claim, wherein said buffer structure comprises the material with about 20GPa or littler Young's modulus.
6. each coupled structure of aforementioned claim, wherein said buffer structure comprises the material with about 10GPa or littler Young's modulus.
7. each coupled structure of aforementioned claim, wherein said buffer structure material is selected from SiCOH and air gap.
8. each coupled structure of aforementioned claim, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material fully.
9. each coupled structure among the claim 1-8, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material in its three side.
10. each coupled structure among the claim 1-8, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material in its both sides.
11. each coupled structure among the claim 1-8, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material in the one of which side.
12. be used for the stress that piezoelectric produces is coupled to the coupled structure in piezoelectric effect transistor (PET) device that is formed on integrated circuit, said structure comprises:
Be formed on said PET device firm rigid body structure on every side; Said PET device further comprises piezoelectricity (PE) material that is arranged between first and second electrodes and is arranged on pressure drag (PR) material between said second electrode and the third electrode; Wherein said first electrode comprises gate terminal; Said second electrode comprises public terminal; And said third electrode comprises lead-out terminal, makes to pass through said PE material to said PR material applied pressure, and the resistance of said PR material depends on crosses over the voltage that said PE material applies; With
Be formed on said PET device soft buffer structure on every side; Said buffer structure is arranged between said PE and PR material and the said rigid body structure; Wherein for said PE and the substrate formed thereon of PR material; Said rigid body structure is clamped said PE and PR material; And wherein said soft buffer structure allows the freedom of said PE material with respect to said PR material movement, will be coupled to said PR material to change the resistance of said PR material by the stress that the voltage that applies to said PE material produces thus.
13. the coupled structure of claim 12, wherein said rigid body structure comprise the material with about 60GPa or bigger Young's modulus.
14. the coupled structure of claim 13, wherein said rigid body structure comprise the material with about 100GPa or bigger Young's modulus.
15. the coupled structure of claim 14, wherein said rigid body structural material is selected from silicon nitride and tungsten.
16. claim 12,13,14 or 15 coupled structure, wherein said buffer structure comprises the material with about 20GPa or littler Young's modulus.
17. each coupled structure among the claim 12-16, wherein said buffer structure comprises the material with about 10GPa or littler Young's modulus.
18. each coupled structure among the claim 12-17, wherein said buffer structure material is selected from SiCOH and air gap.
19. each coupled structure among the claim 12-18, the vertical sidewall of wherein said rigid body structure are surrounded said buffer structure, said PE material and said PR material fully.
20. each coupled structure among the claim 12-19, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material in its three side.
21. each coupled structure among the claim 12-20, the vertical sidewall of wherein said rigid body structure are surrounded said buffer structure, said PE material and said PR material in its both sides.
22. each coupled structure among the claim 12-21, the vertical sidewall of wherein said rigid body structure surrounds said buffer structure, said PE material and said PR material in the one of which side.
23. be formed for the stress that piezoelectric produces is coupled to the method for the coupled structure in piezoelectric effect transistor (PET) device of integrated circuit, said method comprises:
In substrate, carry out first deposition of firm rigid body structural material;
Form the lower electrode of said PET device;
On first deposit of said lower electrode and said firm rigid body structural material, carry out second deposition of said firm rigid body structural material;
Carry out first deposition of soft buffer structure material in second deposit of said firm rigid body structural material and on the top at said lower electrode;
Form piezoelectricity (PE) material of said PET device in first deposit of said soft buffer structure material and on the top at said lower electrode;
Carry out second deposition of said soft buffer structure material in the 3rd deposition of carrying out said firm rigid body structural material on second deposit of said firm rigid body structural material with on first deposit of said soft buffer structure material;
On said PE material, form the public electrode of said PET device;
Carry out the 3rd deposition of said soft buffer structure material in the 4th deposition of carrying out said firm rigid body structural material on the 3rd deposit of said firm rigid body structural material with on second deposit of said soft buffer structure material and said public electrode;
Form pressure drag (PR) material of said PET device in the 3rd deposit of said soft buffer structure material and on the top at said public electrode;
On the 3rd deposit of the 4th deposit of said firm rigid body structural material, said soft buffer structure material and said PR material, carry out the 5th deposition of said firm rigid body structural material; With
On said PR material, form top electrodes.
24. the method for claim 23, wherein said rigid body structural material comprise the material with about 100GPa or bigger Young's modulus.
25. the method for claim 23 or 24, wherein said firm rigid body structural material comprises silicon nitride.
26. claim 23,24 or 25 method, wherein said soft buffer structure material comprises the material with about 10GPa or littler Young's modulus.
27. the method for claim 26, wherein said soft buffer structure material comprises SiCOH.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/632,154 US8247947B2 (en) | 2009-12-07 | 2009-12-07 | Coupling piezoelectric material generated stresses to devices formed in integrated circuits |
| US12/632,154 | 2009-12-07 | ||
| PCT/EP2010/068872 WO2011069920A1 (en) | 2009-12-07 | 2010-12-03 | Coupling structure and method of forming such |
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| CN102640314A true CN102640314A (en) | 2012-08-15 |
| CN102640314B CN102640314B (en) | 2014-05-07 |
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| US (2) | US8247947B2 (en) |
| CN (1) | CN102640314B (en) |
| DE (1) | DE112010004700B4 (en) |
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| WO (1) | WO2011069920A1 (en) |
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| CN106814912A (en) * | 2017-01-17 | 2017-06-09 | 京东方科技集团股份有限公司 | A kind of pressure touch sensor, display device and its driving method |
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| US9058868B2 (en) | 2012-12-19 | 2015-06-16 | International Business Machines Corporation | Piezoelectronic memory |
| US9941472B2 (en) | 2014-03-10 | 2018-04-10 | International Business Machines Corporation | Piezoelectronic device with novel force amplification |
| JP6140885B2 (en) * | 2014-03-14 | 2017-06-07 | 国立研究開発法人科学技術振興機構 | Transistors and electronic circuits using piezoresistors as channels |
| US9251884B2 (en) * | 2014-03-24 | 2016-02-02 | International Business Machines Corporation | Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence |
| US9425381B2 (en) * | 2014-08-26 | 2016-08-23 | International Business Machines Corporation | Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers |
| US9472368B2 (en) | 2014-10-31 | 2016-10-18 | International Business Machines Corporation | Piezoelectronic switch device for RF applications |
| US9287489B1 (en) * | 2014-10-31 | 2016-03-15 | International Business Machines Corporation | Piezoelectronic transistor with co-planar common and gate electrodes |
| US9263664B1 (en) | 2014-10-31 | 2016-02-16 | International Business Machines Corporation | Integrating a piezoresistive element in a piezoelectronic transistor |
| US9293687B1 (en) | 2014-10-31 | 2016-03-22 | International Business Machines Corporation | Passivation and alignment of piezoelectronic transistor piezoresistor |
| US9461236B1 (en) * | 2015-05-22 | 2016-10-04 | Rockwell Collins, Inc. | Self-neutralized piezoelectric transistor |
| US10153421B1 (en) * | 2016-02-09 | 2018-12-11 | Rockwell Collins, Inc. | Piezoelectric transistors with intrinsic anti-parallel diodes |
| US10332753B2 (en) * | 2017-01-13 | 2019-06-25 | International Business Machines Corporation | Wet etching of samarium selenium for piezoelectric processing |
| US10573482B2 (en) | 2017-01-30 | 2020-02-25 | International Business Machines Corporation | Piezoelectric vacuum transistor |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2485749A (en) | 2012-05-23 |
| GB2485749B (en) | 2012-10-03 |
| US8405279B2 (en) | 2013-03-26 |
| GB201205373D0 (en) | 2012-05-09 |
| US8247947B2 (en) | 2012-08-21 |
| US20110133603A1 (en) | 2011-06-09 |
| GB2485749A8 (en) | 2012-09-12 |
| WO2011069920A1 (en) | 2011-06-16 |
| CN102640314B (en) | 2014-05-07 |
| DE112010004700B4 (en) | 2015-10-22 |
| DE112010004700T5 (en) | 2012-10-31 |
| US20120270353A1 (en) | 2012-10-25 |
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