CN102637613A - 一种粗铝丝引线键合的实现方法 - Google Patents

一种粗铝丝引线键合的实现方法 Download PDF

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CN102637613A
CN102637613A CN2012101417766A CN201210141776A CN102637613A CN 102637613 A CN102637613 A CN 102637613A CN 2012101417766 A CN2012101417766 A CN 2012101417766A CN 201210141776 A CN201210141776 A CN 201210141776A CN 102637613 A CN102637613 A CN 102637613A
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layer thickness
aluminum layer
average dissolution
time
bonding
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CN102637613B (zh
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李科
蔡少峰
陈凤甫
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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Abstract

本发明涉及半导体封装技术领域，特别是一种粗铝丝引线键合的实现方法，该方法包括：劈刀的设计优化、芯片表面铝层厚度检测、键合工艺参数的优化匹配、键合强度检测四个重要的操作关键点；因粗铝丝不易氧化，生产工艺简化，可明显降低成本，同时具有接触电阻小，器件功耗低，键合强度高等优点，采用85%的磷酸溶液检查芯片铝层厚度，确保粗铝丝引线键合时铝层厚度满足大于5.0μm的要求，避免作业过程中出现弹坑；工艺参数上采用初始功率压力，再根据实际情况调整，避免弹坑的产生；采用克力计测量焊线的拉断力以判断焊接强度是否达标；本发明既能明显降低成本和降低器件功耗，又能提高产品的可靠性。

Description

一种粗铝丝引线键合的实现方法
技术领域
本发明涉及半导体封装技术领域，尤其是涉及半导体器件封装中使用粗铝丝引线键合的大功率肖特基、快恢复以及IGBT的实现方法。
背景技术
金丝和铜丝引线键合是电子工业中应用最广泛的引线键合技术，但金丝和铜丝受成本和焊接工艺限制无法满足大功率器件、模块及IGBT等产品的键合技术要求。
随着半导体行业的发展，封装器件的功率大大的提高，以适应市场的需求。器件功率的提高涉及到内引线的耐压能力和电流通量，半导体封装行业首先就采用了粗铝线来代替之前使用的金线、铜线。金线键合工艺虽已经非常的成熟，但其成本昂贵，同时我们在执行大功率器件封装时，使用的内引线线径一般都在500μm及以上，相对换算成50μm的金线，我们得同时焊接15条才能满足器件的封装要求，成本提高几倍、几十倍不等，相信没有任何一家封测企业是能够接受的。目前半导体行业铝线焊接其铝线直径只能做到500μm以下，而我司通过研究能够焊接500μm-1000μm的铝线。对于铜线工艺，在金线的基础上能够节省一定的成本，但其在键合的过程中要求的条件比较复杂，因铜线在执行键合时，需要保护气体的保护，提高成本，增加工艺的难度。铜线焊接前需要电流烧结一个铜球，一旦铜球氧化，很容易在芯片铝层上留下弹坑，对产品的质量带来影响，也使产品的可靠性大打折扣。同时类似于金线，1000μm的粗铝线要用50μm的铜线焊接也需要25条以上，在执行芯片焊接时，更容易给芯片带来不利的影响，针对以上金线、铜线的利弊，我们提出一种500μm-1000μm以上粗铝线键合的实现方法，即能满足大功率器件对封装工艺的要求，同事也克服了金线、铜线的弊端，同时降低产品的功耗，提高产品可靠性，给半导体封装行业带来一大利益。
发明内容
本发明所要解决的技术问题是针对上述现有技术现状而提出一种粗铝丝引线键合的实现方法，以降低成本，提高键合焊线力学、电学性能，增强键合强度、减小产品键合接触电阻、降低器件功耗和半导体产品可靠性。
本发明解决上述技术问题所才用的技术方案为：
一种粗铝丝引线键合的实现方法，其特征在于如下操作条件：
（1）劈刀的选取
劈刀的设计优化
因铝丝延展性较好，在生产线的作业过程中，扯丝时易造成脱焊，无法连续作业，必须按粗铝丝线径设计规格相匹配的劈刀，在配合设备组装的的切刀切线，使之保证生产线顺利作业。劈刀有几个部位需要进行修改，包括T尺寸、BL尺寸、ER&BF尺寸、H尺寸、W尺寸、VGW尺寸；另外劈刀材料的选择和表面光洁度的选择，保证劈刀有足够的强度来完成焊接过程而不易损耗；还有通过调节切刀与劈刀之间的距离，从而改变一焊尾丝和二焊尾丝的长短，确保一焊和二焊焊点的焊接强度；
本发明在粗铝丝引线键合作业时采用如下规格的劈刀：
T：1000μm-1800μm、BL：510μm-1060μm、ER&BF：250μm-500μm、
H：750μm-1500μm、W：1000μm-2000μm、VGW：548μm-1093μm；
（2）芯片表面铝层厚度检测
弹坑：压焊时输出能量过大，使芯片焊区铝垫受损而留下小洞。
具体试验方法为：将压焊完成的芯片放在浓度为20%-40%是NaOH溶液中，常温浸泡4小时，然后取出用清水冲洗，再用滤纸吸干水分，放在高倍显微镜下观察，会发现压焊区有针孔大小的小洞，颜色呈彩色。
失铝：压焊时输出能量过大，使芯片焊区铝垫撕裂。检验方法同弹坑，检验后芯片铝层会有脱落现象，颜色呈黑色。
制造大圆片时，因为蒸铝工艺上的问题或出于成本表的考虑会导致一批大圆片出现压焊区铝层结合不致密或太薄，当压焊时，劈刀在铝垫上摩擦就比较容易将铝垫撕裂（产生失铝）或留下空洞（产生弹坑），导致产品失效。
将芯片放置在纯度大于85%的磷酸溶液中，根据铝层的溶解时间与标准样本的对比，计算得到芯片表面铝层的厚度；检测出来的芯片表面铝层厚度大于5μm时，才使用粗铝线引线键合。
（3）关键工艺参数的优化匹配
因为粗铝线焊接时要求的功率压力较大，又考虑到芯片铝层厚度的关系，在执行粗铝丝引线键合的时候会遇到类似于弹坑等情况，解决此类问题遵循下面的原则。
先调整参数是一焊焊点打不粘，然后逐步增加功率，压力以及压焊时间，直到焊点和焊点拉力达到工艺要求为止。同时不能过分追求过大的拉力，而追求焊点拉力的CPK值。实际生产中，不同线径的粗铝丝焊点和焊点拉力的工艺要求也不尽相同。
在粗铝丝引线键合过程中，因粗铝丝不易氧化，生产工艺得到简化，在常温下进行焊接作业，且不需要任何保护气体等保护焊线的措施。
铝层厚度大于5.0μm，粗铝丝Φ500μm~1000μm，优化后的工艺参数：
一焊时间：3-9 ms；一焊功率：5-10 W；一焊压力：4-10.5N；
二焊时间：3-9 ms；二焊功率：5-10.5 W；二焊压力：4.5-11 N；                  
本发明即按照优化后的工艺参数，进行芯片与粗铝丝引线键和的操作。
（4）键合强度检测
为进一步保障产品的可靠性，增加焊线拉断力的检测手段，通过测量焊线的拉断力检测一焊和二焊的焊接强度，具体拉力规定如下：
Φ500um粗铝丝的焊点拉力≥700g；Φ800um粗铝丝的焊点拉力≥775g；
Φ600um粗铝丝的焊点拉力≥725g；Φ900um粗铝丝的焊点拉力≥800g；
Φ700um粗铝丝的焊点拉力≥750g；Φ1000um粗铝丝的焊点拉力≥825g；
本发明选用粗铝线键合具有很多优势：
（1）价格优势：引线键合的各种铝丝其成本只有同线径金丝的1/20；(2)焊接设备优势：由于铜丝硬度大，需要烧球等工艺，还需要氮氢混合气保护，铜丝在烧球过程又易氧化；而铝线焊接设备相对简化许多；（3）电学性能和热学性能比较：大线径的铝线能承载更大的电流；（4）机械性能比较：粗铝线相对比较铜线拉力大；（5）焊点接触强度及可靠性比较：Al/Al界面的金属间扩散效果优于Au/Al或Cu/Al。
由于铝线成本和工艺等诸多优势，目前20mil以下的铝线键合技术已经普及，随着肖特基、快恢复、IGBT等功率器件功率和模块化要求越来越高，对键合铝线电流及其功率要求相应增加，同时粗铝线焊接存在很多技术难点导致无法推广使用。目前大功率产品只能用多根小铝线焊接替代粗铝线，这样多次焊接芯片应力无法释放，产品可靠性存在一定隐患，多线焊接对芯片尺寸要求较大，焊接生产效率也打折扣。若20mil以上的粗铝线键合能够推广使用，大功率半导体产品效率、成本、可靠性优势更加明显，粗铝线在大功率器件封装上的普及面将更广泛。
焊接20mil-40mil的粗铝线键合要求封装技术的发展，特别是焊接面积较大的功率器件封装中，铝丝引线键合具有很多优势：(1)铝丝引线键合在常温下就可进行作业，同时铝丝引线键合前不用烧球，不用保护气体，可明显降低生产成本，简化作业手法；(2)在焊接面积较大的功率器件中使用直径更大的铝丝，可承载更大的电流；(3)对于金或铜引线键合到铝金属化焊盘，其接口组织的显微结构显示，Au/Al或Cu/Al接口的金属间因扩散速率不同形成的化合物，降低了焊点力学性能和电学性能，因此，铝丝引线键合的可靠性要高于金丝引线键合和铜丝引线键合，这是半导体产品可靠性上的一大优势。
与现有技术相比，本发明的优点在于：
与现行的金丝引线或铜丝引线键合技术相比，不仅可以降低成本，而且因为没有脆性金属化合物形成，大大提高了键合的强度，采用铝丝键合新工艺不但能降低器件制造成本，而且其互连强度比金丝或铜丝都还要好。因而，在今后的微电子封装发展中，特别是焊接面积较大的功率器件封装中，铝丝引线键合会成为主流技术。铝丝与传统的芯片上铝金属化焊区的键合，可减低成本，同时粗铝丝因其键合面大，大大降低了焊点电阻，使功率器件VF降低，提高可靠性。
附图说明
图1是采用本发明进行粗铝丝焊接的示意图；
附图标记说明：1- 劈刀；2- 切刀；3- 线弧拱高；4- 一焊焊点；5- 切点；6- 一焊尾丝长度；7- 扯丝高度
图2是本发明的劈刀正面和侧面外观图；
图3是本发明的劈刀头部放大的正面图；
图4是本发明的劈刀头部放大的纵向局部剖视图；
图5是本发明的劈刀头部放大的俯视图；
图6是本发明的劈刀头部放大的立体图；
图7是本发明的试验流程图；
图8是本发明的焊线拉断力测量示意图。
具体实施方式
以下结合附图实施例对发明作进一步详细描述。
按照图1进行焊接时，采用本发明进行粗铝丝引线键合的实现方法，其操作条件如下：
（一）劈刀的选取
因铝丝延展性较好，在生产线的作业过程中，扯丝时易造成脱焊，无法连续作业，必须按粗铝丝线径设计规格相匹配的劈刀，在配合设备组装的的切刀切线，使之保证生产线顺利作业。劈刀有几个部位需要进行修改，包括T尺寸、BL尺寸、ER&BF尺寸、H尺寸、W尺寸、VGW尺寸；另外劈刀材料的选择和表面光洁度的选择，保证劈刀有足够的强度来完成焊接过程而不易损耗；还有通过调节切刀与劈刀之间的距离，从而改变一焊尾丝和二焊尾丝的长短，确保一焊和二焊焊点的焊接强度；
本发明在粗铝丝引线键合作业时采用如下规格的劈刀：
T：1000μm-1800μm、BL：510μm-1060μm、ER&BF：250μm-500μm、
H：750μm-1500μm、W：1000μm-2000μm、VGW：548μm-1093μm；
粗铝丝引线建合劈刀的外形具体尺寸，如图2-6所示。
优化后的20mil-30mil粗铝丝引线键合劈刀关键尺寸列表如下：
Figure 2012101417766100002DEST_PATH_IMAGE001
（二）芯片表面铝层厚度的检测
如图7所示，该检测试验流程如下：
一、准备
检测试验器具（150ml小烧杯、500ml大烧杯各一个，100℃温度计2支，小电炉一台，纯度大于85%的磷酸溶液，及秒表一只）。在框架两端分别装上3-5个同型号待测芯片，按照芯片型号对装有芯片的框架进行标记归类。
二、烧水
将50ml左右的磷酸溶液倒入干净的小烧杯中，打开电炉电源，将装有300ml自来水的大烧杯放在电炉上加热，同时将装有磷酸溶液的小烧杯放在大烧杯中（注意不要让大烧杯中的自来水流入小烧杯）；
分别在两烧杯中放入温度计，观察温度的变化情况，待到大烧杯中水温达到65℃时关掉电炉电源，轻轻摇动小烧杯，同时观察小烧杯中温度计读数，当达到60℃以上时就可以将粘片完成的框架放入磷酸溶液中；
三、溶解
将粘片完成的框架放入磷酸溶液中后，确保框架上的芯片至少有一颗完全浸没在溶液中，用秒表开始计时，观察芯片表面气泡产生以及小烧杯中温度计读数，若温度超过65℃，则要将小烧杯提出大烧杯，控制其温度在60℃-65℃之间，当观察到芯片表面有部分颜色变暗，这表明芯片表面铝层即将溶解完毕，准备记录溶解时间，待芯片白色铝层褪尽，表面无气泡产生时，表明溶解完毕，按下秒表停止键，记录下整个溶解过程所用的时间；
四、试验解释并处理数据
将所有芯片的试验完成并记录下溶解数据后，关掉电炉，收拾器具（用过的磷酸溶液妥善保存，可重复利用），把记录下来的溶解数据和附表一上的数据对比，确定其铝层厚度；
若未能确定，则先确定厚度范围，再根据该范围的平均溶解速度计算其铝层厚度值；
计算公式：铝层厚度=（溶解时间-最临近标准样本溶解时间）*该范围平均溶解速度+该标准样本厚度。
 
五、芯片表面铝层厚度检测采用的标准样本，如下表所示：
Figure 512001DEST_PATH_IMAGE002
（三）关键工艺参数的优化匹配
先调整参数是一焊焊点打不粘，然后逐步增加功率，压力以及压焊时间，直到焊点和焊点拉力达到工艺要求为止。同时不能过分追求过大的拉力，而追求焊点拉力的CPK值。实际批量生产过程中，不同线径的粗铝丝焊点和焊点拉力的工艺要求也不尽相同。下面的键合强度检测我们会详细说到。
 
不同线径铝丝对焊点要求为：
焊点的宽度 =（1.2-1.5）×线径；焊点的长度 =（2.0-2.5）×线径。
优化后的工艺参数列表如下：
Figure 354055DEST_PATH_IMAGE003
（四）键合强度检测方法
采用克力计测量焊线的拉断力来判断焊点与焊点之间的键合强度，以保证其能够满足后工序的工艺要求和提供产品的可靠性和使用寿命。
检测的具体实施方法如下，参见图8操作：
Φ500um粗铝丝的焊点拉力≥700g；Φ800um粗铝丝的焊点拉力≥775g；
Φ600um粗铝丝的焊点拉力≥725g；Φ900um粗铝丝的焊点拉力≥800g；
Φ700um粗铝丝的焊点拉力≥750g；Φ1000um粗铝丝的焊点拉力≥825g。
    在进行芯片与粗铝丝引线键合时，即是按照上述优化匹配后的参数和键合强度检测方法执行的。

Claims (4)

1.一种粗铝丝引线键合的实现方法，其特征在于如下操作条件：
（1）劈刀的选取
在粗铝丝引线键合作业时采用如下规格的劈刀：
T：1000μm-1800μm、BL：510μm-1060μm、ER&BF：250μm-500μm、
H：750μm-1500μm、W：1000μm-2000μm、VGW：548μm-1093μm；
（2）芯片表面铝层厚度检测
将芯片放置在纯度大于85%的磷酸溶液中，根据铝层的溶解时间与标准样本的对比，计算得到芯片表面铝层的厚度；检测出来的芯片表面铝层厚度大于5μm时，使用粗铝线引线键合；
（3）关键工艺参数的优化匹配
粗铝丝Φ500μm~1000μm，优化后的工艺参数：
一焊时间：3-9 ms；一焊功率：5-10 W；一焊压力：4-10.5N；
二焊时间：3-9 ms；二焊功率：5-10.5 W；二焊压力：4.5-11 N；
（4）键合强度检测
采用克力计测量焊线的拉断力进行判断焊接强度是否满足后工序工艺要求，测量时拉点选择在整个焊线的中间部位；
按照优化后的工艺参数，进行芯片与粗铝丝引线键合的操作。
2.根据权利要求1所述的实现方法，其特征在于：所述的芯片表面铝层厚度检测采用的标准样本为：
铝层厚度1.4μm、平均溶解时间155s、时间范围145-165s、平均溶解速度90A/s
铝层厚度1.5μm、平均溶解时间175s、时间范围165-185s、平均溶解速度86A/s
铝层厚度1.7μm、平均溶解时间205s、时间范围195-210s、平均溶解速度83A/s
铝层厚度2.4μm、平均溶解时间265s、时间范围230-285s、平均溶解速度91A/s
铝层厚度3.4μm、平均溶解时间510s、时间范围480-560s、平均溶解速度67A/s
铝层厚度3.6μm、平均溶解时间555s、时间范围540-590s、平均溶解速度61A/s
铝层厚度3.7μm、平均溶解时间605s、时间范围580-620s、平均溶解速度61A/s
铝层厚度4.1μm、平均溶解时间625s、时间范围595-650s、平均溶解速度68A/s
铝层厚度4.2μm、平均溶解时间690s、时间范围625-715s、平均溶解速度61A/s
铝层厚度4.5μm、平均溶解时间830s、时间范围780-860s、平均溶解速度54A/s
铝层厚度5.1μm、平均溶解时间910s、时间范围855-965s、平均溶解速度56A/s
铝层厚度5.3μm、平均溶解时间1025s、时间范围930-1075s、平均溶解速度50A/s
铝层厚度5.6μm、平均溶解时间1090s、时间范围990-1145s、平均溶解速度51A/s。
3.根据权利要求1所述的实现方法，其特征在于：所述的芯片表面铝层厚度检测包括如下步骤：
（1）将50ml的磷酸溶液倒入干净的150ml的烧杯中，打开电炉电源，将装有300ml自来水的500ml的烧杯放在电炉上加热，然后将所述150ml的烧杯放入所述500ml的烧杯中，分别在两烧杯中放入温度计，观察温度的变化情况，待到500ml烧杯中的水温达到65℃时，关掉电炉电源，轻轻摇动150ml烧杯，同时观察150ml烧杯中温度计读数，当达到60℃以上时将粘片完成的框架放入150ml烧杯的磷酸溶液中；
（2）将粘片完成的框架放入磷酸溶液中后，确保框架上的芯片至少有一颗完全浸没在磷酸溶液中，然后用秒表开始计时，观察芯片表面气泡产生以及150ml烧杯中温度计的读数，若温度超过65℃，则要将150ml烧杯从500ml烧杯中提出来，并控制150ml烧杯的温度在60℃-65℃之间，当观察到芯片表面有部分颜色变暗，这表明芯片表面铝层即将溶解完毕，准备记录溶解时间，待芯片白色铝层褪尽，表面无气泡产生时，表明溶解完毕，按下秒表停止键，记录下整个溶解过程所用的时间；
（3）记录下溶解时间，再根据铝层厚度检测标准样本对比数据，确定其铝层厚度；若未能确定，则先确定厚度范围，再根据该范围的平均溶解速度计算其铝层厚度值；计算公式：铝层厚度=（溶解时间-最临近标准样本溶解时间）*该范围平均溶解速度+该标准样本厚度。
4.根据权利要求1所述的实现方法，其特征在于：所述键合强度检测中的焊线拉断力规定原则为：
Φ500um粗铝丝的焊点拉力≥700g；Φ800um粗铝丝的焊点拉力≥775g；
Φ600um粗铝丝的焊点拉力≥725g；Φ900um粗铝丝的焊点拉力≥800g；
Φ700um粗铝丝的焊点拉力≥750g；Φ1000um粗铝丝的焊点拉力≥825g。
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