CN102636109A - Laser interferometer for recombination current modulation semiconductor - Google Patents
Laser interferometer for recombination current modulation semiconductor Download PDFInfo
- Publication number
- CN102636109A CN102636109A CN2012101097946A CN201210109794A CN102636109A CN 102636109 A CN102636109 A CN 102636109A CN 2012101097946 A CN2012101097946 A CN 2012101097946A CN 201210109794 A CN201210109794 A CN 201210109794A CN 102636109 A CN102636109 A CN 102636109A
- Authority
- CN
- China
- Prior art keywords
- links
- input end
- multiplier
- output terminal
- driving power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a laser interferometer for a recombination current modulation semiconductor, which is suitable for measuring the distance. The structure of the laser interferometer comprises a light source, an isolator, an optical fiber coupler, a collimator, a photoelectric detector, a beam splitter, a reference mirror, a signal processor and a feedback controller, wherein the light source is provided with a driving power source and a temperature controller; and a driving power supply provides two sinusoidal modulating current with different frequencies to control the light source. The photoelectric detector converts a received interference signal into an electric signal to be input into the signal processor, so that the distance to be measured can be computed. The feedback controller is connected with the photoelectric detector, and the high-frequency modulating depth is locked by the feedback control. Compared with the prior art, the interferometer provided by the invention is simple and compact in structure, so that the double-sinusoidal phase modulation can be realized due to the recombination current; and the work parameter is locked by means of the feedback control, so that the stability of the system can be enhanced, the measurement precision can be improved, and the real-time measurement can be realized.
Description
Technical field
The present invention relates to the semiconductor laser interference appearance, particularly a kind of recombination current Modulating Diode Laser interferometer.
Background technology
Range observation is an important technology in test and measuring field.In recent years, along with scientific research and industrial development, increasingly high requirement has been proposed for it.Interfere measurement technique is because have advantages such as high resolving power, high precision, noncontact, non-damage by broad research.The sinusoidal phase modulation interference technique is a kind of interfere measurement technique of international forward position; Semiconductor laser sinusoidal phase modulation interferometer has that volume is little, compact conformation, simple, the measuring accuracy advantages of higher of phase modulation (PM); Receive researchist's attention in recent years, obtained very great development in the range observation field.
Measurement range based on the semiconductor laser sinusoidal phase modulation interferometer of heterodyne detection is less, when measurement range surpasses a wavelength, will cause phase ambiguity.Can enlarge measurement range through the synthetic wavelength interference technique; But semiconductor laser interference appearance complex structure based on the synthetic wavelength technology; Need two of uses or above semiconductor laser as light source; In order to reduce the measuring error that external disturbance is introduced, need to use the phase drift of reference interferometer compensating interferometer signal in addition.In order to enlarge measurement range; O.Sasaki etc. have proposed a kind of pair of sinusoidal phase modulation semiconductor laser interference appearance (formerly technological [1]: " Double sinusoidal phase-modulating laser diode interferometer for distance measurement "; Appl.Opt.30; 3617-3621,1991).This interferometer utilizes low-frequency current modulation and high frequency PZT modulation to realize two sinusoidal phase modulation, has enlarged measurement range.Because the hesitation of PZT and the influence of mechanical vibration, measurement range only expands 10 μ m to, and precision is lower; This external pelivimetry can not be carried out in real time.T.Suzuki etc. have proposed a kind of pair of sinusoidal phase modulation distributed Bragg reflection laser (formerly technological [2]: " Double sinusoidal phase-modulating distributed-Bragg-reflector laser-diode interferometer for distance measurement "; Appl.Opt.42; 60-66; 2002), this interferometer utilizes recombination current to realize two sinusoidal phase modulation, in the measurement range of 1mm, has realized the measuring accuracy of 1.6 μ m; Because the influence of laser optical modulation; The expansion of measurement range and the raising of precision all are restricted, and the system stability of this interferometer is lower, can not measure in real time simultaneously.
Summary of the invention
The objective of the invention is provides a kind of recombination current Modulating Diode Laser interferometer in order to overcome the above-mentioned deficiency of technology formerly.The characteristics that this interferometer has is simple and compact for structure, stability high, measuring accuracy is high and can measure in real time.
Technical solution of the present invention is following:
A kind of recombination current Modulating Diode Laser interferometer; Comprise the light source that has temperature controller, isolator, fiber coupler, collimating apparatus, beam splitter, reference mirror, first photodetector, second photodetector, signal processor and the feedback controller that are driven by driving power, its characteristics are:
Described driving power input port links to each other with the feedback controller output port, and first output port links to each other with light source, and second output port links to each other with the 3rd input port of signal processor; Described driving power is that light source provides DC driven electric current and simple sinusoidal alternating current;
Light beam by light emitted is divided into two-beam through isolator and through fiber coupler: a branch of light is through outgoing behind the collimating device collimation; Through being radiated at respectively on object under test and the reference mirror after the beam splitter beam splitting; By the light of object under test surface reflection and by the light of reference mirror reflection again through after beam splitter and the collimating apparatus, pass through described fiber coupler again by first photodetector; Another Shu Guang is surveyed by second photodetector;
The first input end mouth of described signal processor links to each other with the output terminal of first photodetector; Second input port links to each other with the output terminal of second photodetector; The 3rd input port links to each other with second output port of driving power, and output port links to each other with the input port of described feedback controller; The output terminal of this feedback controller links to each other with described driving power input port.
The structure of described signal processor is: the first input end mouth of signal processor links to each other with the input end of second input port with first divider, and the output terminal of first divider links to each other with the first input end of the 3rd multiplier with the 4th multiplier respectively; The 3rd input port of signal processor links to each other with the input end of the 3rd multiplier first input end and frequency multiplier respectively; The output terminal of described the 3rd multiplier links to each other with the input end of first low-pass filter, and the output terminal of this first low-pass filter links to each other with the input end of the 5th multiplier and the first input end of second divider simultaneously; After connecting with first single-chip microcomputer, described the 5th multiplier inserts the first input end of subtracter;
The output terminal of described frequency multiplier links to each other with second input end of the 4th multiplier; The output terminal of the 4th multiplier links to each other with the input end of second low-pass filter; The output terminal of this second low-pass filter links to each other with second input end of the 6th multiplier input and second divider simultaneously
After connecting with second singlechip, the output terminal of described the 6th multiplier inserts second input end of subtracter, incoming memory after described second divider is connected with the 3rd single-chip microcomputer, the 4th single-chip microcomputer; The output of described subtracter inserts feedback controller through output port.
The structure of described feedback controller comprises: by input end to output terminal is integrator, the 7th multiplier and second adder successively.
The structure of described driving power comprises: direct supply, low frequency crystal oscillator, high frequency crystal oscillator, first multiplier, second multiplier and first adder; The input port of described driving power links to each other with the input end of second multiplier; Direct supply links to each other with the first input end of first adder; Low frequency crystal oscillator links to each other with second input end of first adder with first multiplier series connection back; Described high frequency crystal oscillator links to each other with second input end of second multiplier; First output terminal of this second multiplier links to each other with the 3rd input end of first adder, and first output terminal of first adder links to each other with described light source first input end, and second output port of second multiplier links to each other with the 3rd input end of signal processor.
Described first single-chip microcomputer, second singlechip and the 4th single-chip microcomputer have the function of maximal value found the solution and minimum value.
Described the 3rd single-chip microcomputer has the function of carrying out arithmetic and finding the solution arctan function.
The present invention has been owing to adopted technique scheme, with compared with techniques formerly, has the following advantages and good effect:
1, with formerly the technology [1] compare, recombination current Modulating Diode Laser interferometer structure of the present invention is simple, utilizes the compounded sine electric current to realize two sinusoidal phase modulation, has enlarged measurement range.
2, compare with technology [2] formerly, recombination current Modulating Diode Laser interferometer of the present invention has been eliminated the influence of light source intensity modulation through the signal synchronous collection method, has enlarged measurement range, has improved measuring accuracy.
3, compare with technology [1,2] formerly, recombination current Modulating Diode Laser interferometer of the present invention has improved system stability through feedback control system real-time lock running parameter, has realized real-time measurement.
Description of drawings
Fig. 1 is the structural representation of recombination current Modulating Diode Laser interferometer of the present invention.
Fig. 2 is the structural representation of driving power of the present invention.
Fig. 3 is the structural representation of signal processor of the present invention.
Fig. 4 is the structural representation of feedback controller of the present invention.
Embodiment
Below in conjunction with instance and accompanying drawing the present invention is further specified, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the structural representation of recombination current Modulating Diode Laser interferometer of the present invention.Visible by figure; Recombination current Modulating Diode Laser interferometer of the present invention; Comprise the light source that has temperature controller 23 that drives by driving power 1, isolator 4, fiber coupler 5, collimating apparatus 6, beam splitter 7, reference mirror 9, first photodetector 10, second photodetector 11, signal processor 12 and feedback controller 13
Described driving power 1 input port 1a links to each other with feedback controller 13 output ports, and the first output port 1b links to each other with light source 3, and the second output port 1c links to each other with the 3rd input port 12c of signal processor 12; Described driving power 1 provides DC driven electric current and simple sinusoidal alternating current for light source 3;
Be divided into two-beam by light source 3 emitted light beams through isolator 4 and through fiber coupler 5: a branch of light is through outgoing behind collimating apparatus 6 collimations; Through being radiated at respectively after beam splitter 7 beam splitting on object under test 8 and the reference mirror 9; By the light of object under test 8 surface reflections and by the light of reference mirror 9 reflections again through after beam splitter 7 and the collimating apparatus 6, pass through described fiber coupler 5 again by first photodetector 10; Another Shu Guang is surveyed by second photodetector 11;
The first input end mouth 12a of described signal processor 12 links to each other with the output terminal of first photodetector 10; The second input port 12b links to each other with the output terminal of second photodetector 11; The 3rd input port 12c links to each other with the second output port 1c of driving power 1, and output port 12d links to each other with the input port of described feedback controller 13; The output terminal of this feedback controller 13 links to each other with described driving power 1 input port 1a.
Fig. 2 is the structural representation of driving power of the present invention.Visible by figure, the structure of driving power 1 of the present invention comprises: direct supply 101, low frequency crystal oscillator 102, high frequency crystal oscillator 103, first multiplier 104, second multiplier 105 and first adder 106; The input port 1a of described driving power 1 links to each other with the input end of second multiplier 105; Direct supply 101 links to each other with the first input end of first adder 106; Low frequency crystal oscillator 102 links to each other with second input end of first adder 106 with first multiplier, 104 series connection backs; Described high frequency crystal oscillator 103 links to each other with second input end of second multiplier 105; First output terminal of this second multiplier 105 links to each other with the 3rd input end of first adder 106, and the first output terminal 1b of first adder 106 links to each other with described light source 3 first input ends, and the second output port 1c of second multiplier 105 links to each other with the 3rd input end of signal processor 12.
Fig. 3 is the structural representation of signal processor of the present invention.Visible by figure; The structure of signal processor 12 of the present invention is: the first input end mouth 12a of signal processor 12 links to each other with the input end of first divider 1201 with the second input port 12b, and the output terminal of first divider 1021 links to each other with the first input end of the 3rd multiplier 1202 and the 4th multiplier 1207 respectively; The 3rd input port 12c of signal processor 12 links to each other with the input end of the 3rd multiplier 1202 first input ends and frequency multiplier 1206 respectively; The output terminal of described the 3rd multiplier 1202 links to each other with the input end of first low-pass filter 1203, and the output terminal of this first low-pass filter 1203 links to each other with the input end of the 5th multiplier 1204 and the first input end of second divider 1212 simultaneously; After connecting with first single-chip microcomputer 1205, described the 5th multiplier 1204 inserts the first input end of subtracter 1211;
The output terminal of described frequency multiplier 1206 links to each other with second input end of the 4th multiplier 1207; The output terminal of the 4th multiplier 1207 links to each other with the input end of second low-pass filter 1208; The output terminal of this second low-pass filter 1208 links to each other with second input end of the 6th multiplier 1209 input ends and second divider 1212 simultaneously; Second input end of subtracter 1211 is inserted in the output terminal of described the 6th multiplier 1209 back of connecting with second singlechip 1210, the described second divider 1212 back incoming memory 1215 of connecting with the 3rd single-chip microcomputer 1213, the 4th single-chip microcomputer 1214; The output of described subtracter 1211 inserts feedback controller 13 through output port 12d.
Fig. 4 is the structural representation of feedback controller of the present invention.The structure of feedback controller 13 of the present invention comprises: by input end to output terminal is integrator 1301, the 7th multiplier 1302 and second adder 1303 successively.
Described first single-chip microcomputer 1205, second singlechip 1210 and the 4th single-chip microcomputer 1214 have the function of maximal value found the solution and minimum value.
Described the 3rd single-chip microcomputer 1213 has the function of carrying out arithmetic and finding the solution arctan function.
The temperature of the described light source 3 of said temperature controller 2 controls only changes the temperature of light source in ± 0.01 ℃ scope.
Behind light source 3 injection currents, its wavelength and intensity are expressed as respectively:
λ(t)＝λ
0+β
0I
m(t)，
g(t)＝β′[I
0+I
m(t)]，
Wherein: λ
0Be the centre wavelength of light source, β
0Be the wavelength of the light source variation factor with drive current, β ' is the variation factor of the light intensity of light source with drive current, I
0Be the direct current biasing that the direct supply in the driving power provides, I
m(t) the compounded sine alternating current that provides for driving power; The sinusoidal signal that this compounded sine alternating current is provided by low frequency crystal oscillator in the driving power and high frequency crystal oscillator is respectively after first multiplier and second multiplier amplify; Produce through first adder stack back, it can be expressed as again:
I
m(t)＝a
ccosω
ct+a
bcosω
bt，
Wherein: ω
cThe angular frequency of the high frequency sinusoidal signal that provides for higher-order of oscillation crystal, ω
bThe angular frequency of the low frequency sinusoidal signal that provides for the low-frequency oscillation crystal, a
cAnd a
bBe respectively driving power the amplitude of high frequency simple sinusoidal alternating current and low frequency simple sinusoidal alternating current is provided.
First photodetector, 10 detected interference signal S
D(t) can be expressed as:
S
D(t)＝g(t)[S
0+S
1cos(z
ccosω
ct+z
bcosω
bt+α)]
＝β′[I
0+I
m(t)][S
0+S
1cos(z
ccosω
ct+z
bcosω
bt+α)]’
Wherein: S
0And S
1Be respectively when not considering intensity modulation, direct current and the alternating component of interference signal item S (t),
With
Be the corresponding high and low frequency sinusoidal phase modulation degree of depth of interference signal S (t); α=(4 π/λ
0) phase place of l for being determined by the initial distance l between collimating apparatus and the object under test.
Second photodetector, 11 detected signals are optical intensity modulation signal g (t).
As shown in Figure 3, interference signal S
D(t) with optical intensity modulation signal g (t) through the be eliminated interference signal of intensity modulation of first divider 1201:
Wherein:
J
n(z
c) be z
cN rank Bessel's function.The output of first low-pass filter 1203 and second low-pass filter 1208 is respectively interference signal S (t) about ω
cSingle order and second order frequency component:
Wherein: LPF [X] is the low-pass filter function of X.P
1(t) and P
2(t) getting into first single-chip microcomputer 1205 after in the 5th multiplier 1204 and the 6th multiplier 1209, carrying out square operation respectively obtains with second singlechip 1210:
G
1(t)＝MAX[P
1 2(t)]＝S
1 2J
1 2(z
c)
G
2(t)＝MAX[P
2 2(t)]＝S
1 2J
2 2(z
c)’
Wherein, MAX [X] is the max function of X.G
1(t) and G
2(t) obtain differential signal through subtracter 1211: G
D(t)=G
1(t)-G
2(t), G
D(t) be connected into feedback controller 13 through output port 12d, make differential signal G through feedback controller 13
D(t)=0, promptly | J
1(z
c) |=| J
2(z
c) |, at this moment, the high frequency sinusoidal phase modulation degree of depth is locked to z
c=2.63.
Simultaneously, signal P
1(t) and P
2(t) be connected into the 3rd single-chip microcomputer 1213 through second divider 1212, obtain:
Signal
carries out max min through the 4th single-chip microcomputer 1214 and finds the solution with additive operation and can obtain displacement to be measured:
Wherein, MIN [X] is the minimum value of X.
Since through feedback control system 13 real-time locks running parameter, the stability of system is improved, and can in a big way, realize the high precision range observation.
Be the concrete parameter of an embodiment of recombination current modulation semiconductor interferometer of the present invention below:
The crystal oscillator frequency of low frequency crystal oscillator 102 is 100Hz, and the crystal oscillator frequency of high frequency crystal oscillator 103 is 5kHz, and the low frequency sinusoidal current amplitude that driving power 1 provides is 10mA, and the initial high frequency sinusoidal current amplitude that provides is 1mA.Light source 3 is the semiconductor laser of 1310nm for wavelength, and peak power output is 10mW.The cutoff frequency of first simulation low-pass filter 1203 and second low-pass filter 1208 is 2.2kHz.During measurement, feedback controller 13 is locked to 2.63 through regulating high frequency sinusoidal current amplitude with the high frequency sinusoidal phase modulation degree of depth.At this moment, can try to achieve testing distance l through signal processor 12.
Since utilize recombination current to realize two sinusoidal phase modulation, interferometer structure compact of the present invention, and, strengthened system stability through FEEDBACK CONTROL locking running parameter, and the realization distance is measured in real time in the scope of 50mm again, and measuring accuracy is 1 μ m.
Claims (6)
1. recombination current Modulating Diode Laser interferometer; Comprise the light source that has temperature controller (2) (3), isolator (4), fiber coupler (5), collimating apparatus (6), beam splitter (7), reference mirror (9), first photodetector (10), second photodetector (11), signal processor (12) and the feedback controller (13) that drive by driving power (1), it is characterized in that:
Described driving power (1) input port (1a) links to each other with feedback controller (13) output port, and first output port (1b) links to each other with light source (3), and second output port (1c) links to each other with the 3rd input port (12c) of signal processor (12); Described driving power (1) provides DC driven electric current and simple sinusoidal alternating current for light source (3);
Be divided into two-beam by light source (3) emitted light beams through isolator (4) and through fiber coupler (5): a branch of light is through outgoing behind collimating apparatus (6) collimation; Through being radiated at respectively on object under test (8) and the reference mirror (9) after beam splitter (7) beam splitting; By the light of object under test (8) surface reflection and by the light of reference mirror (9) reflection again through after beam splitter (7) and the collimating apparatus (6), pass through described fiber coupler (5) again by first photodetector (10); Another Shu Guang is surveyed by second photodetector (11);
The first input end mouth (12a) of described signal processor (12) links to each other with the output terminal of first photodetector (10); Second input port (12b) links to each other with the output terminal of second photodetector (11); The 3rd input port (12c) links to each other with second output port (1c) of driving power (1), and output port (12d) links to each other with the input port of described feedback controller (13); The output terminal of this feedback controller (13) links to each other with described driving power (1) input port (1a).
2. recombination current Modulating Diode Laser interferometer according to claim 1; The structure that it is characterized in that described signal processor (12) is: the first input end mouth (12a) of signal processor (12) links to each other with the input end of second input port (12b) with first divider (1201), and the output terminal of first divider (1021) links to each other with the first input end of the 3rd multiplier (1202) with the 4th multiplier (1207) respectively; The 3rd input port (12c) of signal processor (12) links to each other with the input end of the 3rd multiplier (1202) first input end and frequency multiplier (1206) respectively; The output terminal of described the 3rd multiplier (1202) links to each other with the input end of first low-pass filter (1203), and the output terminal of this first low-pass filter (1203) links to each other with the input end of the 5th multiplier (1204) and the first input end of second divider (1212) simultaneously; After connecting with first single-chip microcomputer (1205), described the 5th multiplier (1204) inserts the first input end of subtracter (1211);
The output terminal of described frequency multiplier (1206) links to each other with second input end of the 4th multiplier (1207); The output terminal of the 4th multiplier (1207) links to each other with the input end of second low-pass filter (1208); The output terminal of this second low-pass filter (1208) links to each other with second input end of the 6th multiplier (1209) input end and second divider (1212) simultaneously
After connecting with second singlechip (1210), the output terminal of described the 6th multiplier (1209) inserts second input end of subtracter (1211), incoming memory (1215) after described second divider (1212) is connected with the 3rd single-chip microcomputer (1213), the 4th single-chip microcomputer (1214); The output of described subtracter (1211) inserts feedback controller (13) through output port (12d).
3. recombination current Modulating Diode Laser interferometer according to claim 1 is characterized in that the structure of described feedback controller (13) comprising: by input end to output terminal is integrator (1301), the 7th multiplier (1302) and second adder (1303) successively.
4. recombination current Modulating Diode Laser interferometer according to claim 1 is characterized in that the structure of described driving power (1) comprising: direct supply (101), low frequency crystal oscillator (102), high frequency crystal oscillator (103), first multiplier (104), second multiplier (105) and first adder (106); The input port (1a) of described driving power (1) links to each other with the input end of second multiplier (105); Direct supply (101) links to each other with the first input end of first adder (106); Low frequency crystal oscillator (102) links to each other with second input end of first adder (106) with first multiplier (104) series connection back; Described high frequency crystal oscillator (103) links to each other with second input end of second multiplier (105); First output terminal of this second multiplier (105) links to each other with the 3rd input end of first adder (106); First output terminal (1b) of first adder (106) links to each other with described light source (3) first input end, and second output port (1c) of second multiplier (105) links to each other with the 3rd input end of signal processor (12).
5. recombination current Modulating Diode Laser interferometer according to claim 1 is characterized in that described first single-chip microcomputer (1205), second singlechip (1210) and the 4th single-chip microcomputer (1214) have the function of maximal value found the solution and minimum value.
6. recombination current Modulating Diode Laser interferometer according to claim 1 is characterized in that described the 3rd single-chip microcomputer (1213) has the function of carrying out arithmetic and finding the solution arctan function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210109794.6A CN102636109B (en) | 2012-04-13 | 2012-04-13 | Laser interferometer for recombination current modulation semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210109794.6A CN102636109B (en) | 2012-04-13 | 2012-04-13 | Laser interferometer for recombination current modulation semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102636109A true CN102636109A (en) | 2012-08-15 |
| CN102636109B CN102636109B (en) | 2014-08-13 |
Family
ID=46620599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210109794.6A Active CN102636109B (en) | 2012-04-13 | 2012-04-13 | Laser interferometer for recombination current modulation semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102636109B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102797457A (en) * | 2012-08-21 | 2012-11-28 | 成都宏天电传工程有限公司 | Device and method for precisely calculating well depth based on polarized light |
| CN103543125A (en) * | 2013-10-21 | 2014-01-29 | 山西大学 | All-optical gas detection method and device based on Michelson interference principle |
| CN106289053A (en) * | 2016-09-12 | 2017-01-04 | 哈尔滨工程大学 | A kind of phase carrier laser interference signal in orthogonal synthesis type closed loop demodulation method |
| CN112577923A (en) * | 2019-09-30 | 2021-03-30 | 西门子股份公司 | Method for measuring concentration of gas component in measurement gas and gas analyzer |
| CN113865742A (en) * | 2021-08-20 | 2021-12-31 | 北京工业大学 | Method and device for measuring temperature of inner side of coated film of cavity surface of semiconductor laser based on detection optical fiber |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1335482A (en) * | 2001-08-27 | 2002-02-13 | 中国科学院上海光学精密机械研究所 | All-optical fiber and large range displacement measurer |
| CN1384331A (en) * | 2002-06-14 | 2002-12-11 | 中国科学院上海光学精密机械研究所 | Full-fiber nanometer-precision microdisplacement and microvibration interference measuring instrument |
| CN1384332A (en) * | 2002-06-14 | 2002-12-11 | 中国科学院上海光学精密机械研究所 | Double-wavelength nanometer-precision real-time interferometer |
| CN201032490Y (en) * | 2007-03-29 | 2008-03-05 | 中国科学院上海光学精密机械研究所 | Coherent laser ranger capable of obtaining target location information |
-
2012
- 2012-04-13 CN CN201210109794.6A patent/CN102636109B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1335482A (en) * | 2001-08-27 | 2002-02-13 | 中国科学院上海光学精密机械研究所 | All-optical fiber and large range displacement measurer |
| CN1384331A (en) * | 2002-06-14 | 2002-12-11 | 中国科学院上海光学精密机械研究所 | Full-fiber nanometer-precision microdisplacement and microvibration interference measuring instrument |
| CN1384332A (en) * | 2002-06-14 | 2002-12-11 | 中国科学院上海光学精密机械研究所 | Double-wavelength nanometer-precision real-time interferometer |
| CN201032490Y (en) * | 2007-03-29 | 2008-03-05 | 中国科学院上海光学精密机械研究所 | Coherent laser ranger capable of obtaining target location information |
Non-Patent Citations (1)
| Title |
|---|
| 李中梁等: "消除正弦相位调制干涉仪中光强调制影响的全光纤干涉仪", 《中国激光》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102797457A (en) * | 2012-08-21 | 2012-11-28 | 成都宏天电传工程有限公司 | Device and method for precisely calculating well depth based on polarized light |
| CN102797457B (en) * | 2012-08-21 | 2015-08-26 | 四川宏华电气有限责任公司 | A kind of device and method based on polarised light accurate Calculation well depth |
| CN103543125A (en) * | 2013-10-21 | 2014-01-29 | 山西大学 | All-optical gas detection method and device based on Michelson interference principle |
| CN106289053A (en) * | 2016-09-12 | 2017-01-04 | 哈尔滨工程大学 | A kind of phase carrier laser interference signal in orthogonal synthesis type closed loop demodulation method |
| CN112577923A (en) * | 2019-09-30 | 2021-03-30 | 西门子股份公司 | Method for measuring concentration of gas component in measurement gas and gas analyzer |
| CN113865742A (en) * | 2021-08-20 | 2021-12-31 | 北京工业大学 | Method and device for measuring temperature of inner side of coated film of cavity surface of semiconductor laser based on detection optical fiber |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102636109B (en) | 2014-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10162245B2 (en) | Distributed acoustic sensing system based on delayed optical hybrid phase demodulator | |
| CN110411335A (en) | Differential type sinusoidal phase modulation laser interference surface nanometer-displacement device and method | |
| CN102636109B (en) | Laser interferometer for recombination current modulation semiconductor | |
| CN107576285B (en) | Laser mixes micro angle measurement system and measurement method certainly | |
| CN108801476B (en) | A kind of optical-fiber type adaptive equalization homodyne measuring system measuring time-varying phase signal | |
| CN110672137B (en) | Interference type optical fiber vibration sensing system based on wavelength division multiplexing and microwave photon technology | |
| CN109357672B (en) | Two-way optical carrier microwave resonance system based on circulator structure and method for detecting angular velocity of two-way optical carrier microwave resonance system | |
| CN104914444A (en) | Long-distance laser heterodyne interference range-finding structure | |
| US11874113B2 (en) | Bidirectional optical-carrying microwave resonance system based on circulator structure and method for detecting angular velocity by said system | |
| CN100363728C (en) | Laser feed-back wave plate measuring apparatus | |
| Lu et al. | All-fiber self-mixing interferometer based on DFB laser and phase modulating technique | |
| CN102269627B (en) | Method and device for detecting and controlling phase shift based on alternating current small-phase modulation | |
| CN101738160B (en) | Double light source sinusoidal phase-modulation displacement measurement interferometer | |
| CN105300274B (en) | A kind of heterodyne interferometry system convenient for adjusting splitting ratio | |
| CN115752416A (en) | Resonant fiber optic gyroscope for detecting angular velocity signals | |
| Li et al. | Investigation and cancellation of residual amplitude modulation in fiber electro-optic modulator based frequency modulation gas sensing technique | |
| US4749277A (en) | Methods of and apparatus for measuring the frequency response of optical detectors | |
| Dong et al. | Quadrature phase detection based on phase shift of self-mixing interferometer for real-time displacement measurement | |
| CN109084884B (en) | Homodyne laser vibration measurement device and vibration detection method thereof | |
| Slagmolen et al. | Frequency stability of spatial mode interference (tilt) locking | |
| CN108007307B (en) | Optical fiber measuring method and measuring device | |
| CN110319940A (en) | The laser fiber interferometer diagnostic system of high-density plasma density measure | |
| CN108732580A (en) | A kind of absolute distance measurement system and measurement method based on phase method Yu composite wave regular way | |
| Chawah et al. | Real time and adaptive Kalman filter for joint nanometric displacement estimation, parameters tracking and drift correction of EFFPI sensor systems | |
| CN107765090B (en) | Phase sequence calibration method for 3x3 coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211112 Address after: 311421 No. 328, Daqiao South Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Institute of Optics and precision machinery Address before: 201800 P.O. Box 800-211, Jiading District, Shanghai Patentee before: Shanghai Institute of Optics and precision machinery, Chinese Academy of Sciences |