CN102634756A - Preparation method of cadmium telluride target - Google Patents
Preparation method of cadmium telluride target Download PDFInfo
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- CN102634756A CN102634756A CN2012101156959A CN201210115695A CN102634756A CN 102634756 A CN102634756 A CN 102634756A CN 2012101156959 A CN2012101156959 A CN 2012101156959A CN 201210115695 A CN201210115695 A CN 201210115695A CN 102634756 A CN102634756 A CN 102634756A
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- cadmium telluride
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- cadmium
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- telluride target
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Abstract
The invention discloses a preparation method of a cadmium telluride target, comprising the following steps of: carrying out cold-pressing molding on a cadmium telluride material to prepare the cadmium telluride target; sintering and cooling the cadmium telluride target, wherein in the sintering step, firstly introducing inert gas and heating the target to 80-150 DEG C, then preserving the heat for 50-70 minutes, and finally, gradually raising the temperature in 4 hours to 780-880 DEG C and preserving the heat for 3-5 hours. The cadmium telluride target prepared by using the method can be directly sputtered and can work without pre-sputtering; and meanwhile, the partial discharging phenomenon does not happen. The preparation method can be widely applied to scientific researches and industrial production.
Description
Technical field
The invention belongs to cadmium telluride diaphragm solar battery preparation technology, be specifically related to the making method of cadmium telluride target.
Background technology
At present; Cadmium telluride diaphragm solar battery more and more receives users' favor; In the preparation technology of cadmium telluride diaphragm solar battery; The making of cadmium telluride target is its key point, and existing making method mainly comprises near space subliming method, physical vapor conveying method, high vacuum vapor deposition method and magnetron sputtering method etc., the following shortcoming of cadmium telluride target ubiquity that adopts aforesaid method to make:
(1) can't sputter under sputtering condition or through sputtering target material in advance for a long time, could the sputter success, if after turn-offing shielding power supply,, also to pass through the process of preparatory sputtering target material could work through the cooling of certain hour sputter coating again;
(2) in the process of sputtering target material, target causes this place the perforation phenomenon to occur easily in shelf depreciation.
Summary of the invention
To above-mentioned deficiency, the present invention provides a kind of making method of cadmium telluride target, and the cadmium telluride target that makes through this making method not only need not to get final product on-line operation through preparatory sputtering target material, the phenomenon of shelf depreciation also can not occur.
The present invention realizes through such technical scheme: a kind of making method of cadmium telluride target, and this making method comprises the steps: the first step, and the cadmium telluride material is carried out cold-press moulding, is made into the cadmium telluride target; In second step, cadmium cadmium target is carried out sintering: cadmium cadmium target is put into heating unit, feed rare gas element, this rare gas element includes but not limited to nitrogen, argon gas, behind the several minutes, target is heated to 80～150 ℃, is incubated 50～70 minutes; In 4 hours, be warming up to 780～880 ℃ gradually then, be incubated 3～5 hours again; In the 3rd step, be cooled to normal temperature.
Further be in above-mentioned first step, to adopt special mould that the cadmium telluride material is formed; This special mould can adopt die steel to make, and comprises the top die tool, presses down mould and charging mould, wherein; The charging mould is provided with 2～7 ° of inclination angles with the joining place that presses down mould, preferably also guarantees when cadmium telluride material press forming, also to form unified inclination angle simultaneously, helps the target demoulding like this; Can prevent that also breaking from appearring in target or stratified phenomenon, guarantee that the target knockout course carries out smoothly.
Said heating unit can adopt commercial muffle furnace as heating source; The present invention adopts homemade quartz tube type process furnace, and quartz is shelved plate to its structure, ventilate quartzy box, insulating sheath, thermofin and ventpipe in order to set gradually from inner chamber to skin, wherein; The set inside of insulating sheath has heater strip; Ventpipe passes thermofin with the quartzy box of ventilation and stretch in the heating space that becomes of the quartzy box-like of ventilation, so that feed rare gas element, thereby in the quartzy box of ventilating, forms atmosphere of inert gases; Why adopting quartzy material, just do not consider its resistant to elevated temperatures character, also is in order to prevent the introducing of impurity simultaneously.
Further improvement as technique scheme; The quartzy box of said ventilation comprises two portions; Comprise quartz cover part and ventilation quartz cover position, these two portions leave louver at joining place, so that the smooth discharge of gas; This ventilates quartzy box in manufacture craft of the present invention, uses as sintering box.
In above-mentioned second step, under oxygen-free environment in 4 hours with cadmium telluride target even heating to 810 ℃, promptly in this process, the omnidistance feeding that rare gas element is all arranged.
In above-mentioned second step, soaking time is preferably 1 hour for the first time.
In above-mentioned second step, all processes all are under oxygen-free environment, to carry out, and promptly in all heating and insulating process, from start to finish have rare gas element to feed always.
The invention provides a kind of making method of cadmium telluride target, comprise cold-press moulding, sintering and refrigerative step, formed complete compacting and the sintering process of a cover; Wherein, special shaping dies and heating unit is provided also, thereby the cadmium telluride target can not break or layering when the demoulding; The cadmium telluride target that makes through this making method need not can carry out work through preparatory sputter; Save the process of preparatory sputter, practiced thrift production cost and time, simultaneously; The phenomenon of shelf depreciation can not appear in this cadmium telluride target yet in sputtering technology; Effectively overcome the drawback of cadmium telluride target local perforations in the existing technology, the making of this making method square shaped large size cadmium telluride target is useful especially, has satisfied scientific research and need of industrial production simultaneously.
Description of drawings
Fig. 1 is the sectional view of used special mould in the first step of the present invention.
Fig. 2 is the structure diagram of the used quartz tube type process furnace of the present invention.
Embodiment
In order to be expressly understood the object of the invention, technical scheme and beneficial effect more; Below in conjunction with accompanying drawing the present invention is done further explanation; But protection scope of the present invention is not limited in following examples; Should not be construed as the restriction to protection domain of the present invention, anyone unsubstantiality of on technical scheme provided by the invention basis, making adjustment all falls within protection scope of the present invention.
Embodiment 1: as depicted in figs. 1 and 2, a kind of making method of cadmium telluride target comprises the steps:
The first step; Cadmium telluride material 4 is carried out cold-press moulding; Be made into cadmium telluride target 11: adopt special mould that cadmium telluride material 4 is formed, make cadmium cadmium target 11, this special mould comprises top die tool 1, presses down mould 2 and charging mould 3; Wherein, charging mould 3 is provided with 2～7 ° of inclination angles with the joining place that presses down mould 2.
In second step, cadmium cadmium target 11 is carried out sintering: cadmium cadmium target 11 is put into heating unit, feed the rare gas element several minutes, when estimating that air is all discharged, evenly target is heated to 80～150 ℃, be incubated 50～70 minutes; Under oxygen-free environment, be warming up to 780～880 ℃ in 4 hours gradually then, be incubated 3～5 hours again; Above-mentioned heating unit is the quartz tube type process furnace; Its structure is shelved plate 12, the quartzy box of ventilation 5, insulating sheath 6, thermofin 7 and ventpipe 8 for set gradually quartz from inner chamber to skin; Wherein, The set inside of insulating sheath 6 has heater strip 9, and ventpipe 8 passes thermofin 7 and the quartzy box 5 of ventilation and stretches in the heating space of quartzy box 5 formation of ventilation, so that feed rare gas element; The quartzy box 5 of said ventilation comprises two portions, comprises quartz cover part 5-1 and ventilation quartz cover part 5-2, and these two portions leave louver 10 at joining place.
In the 3rd step, normal temperature is cooled to room temperature.
Embodiment 2: as depicted in figs. 1 and 2, a kind of making method of cadmium telluride target comprises the steps:
The first step adopts the above-mentioned special mould of this case that cadmium telluride material 4 is carried out cold-press moulding, is made into cadmium telluride target 11: with the above-mentioned mould of packing into of the Powdered cadmium telluride material 4 about 100 orders; It should be noted that; Make this moment pulverous cadmium telluride material 4 smooth and even as far as possible, so that cadmium telluride target 11 consistent in density everywhere, after pressing pressure reaches desirable value; Pressurize 1 to 3 minute; The demoulding then and since charging mould 3 with press down mould 2 and have 2 to 7 ° of inclination angles at joining place, can guarantee therefore when the demoulding because on the cadmium telluride target 11 that overdraft occurs can offsetting wherein a part of pressure when uneven; Can realize the smooth demoulding, can not occur breaking or demixing phenomenon.
In second step, cadmium cadmium target 11 is carried out sintering: the cadmium cadmium target 11 that makes in the first step is placed on quartz shelves on the plate 12, put into the quartzy box 5 of ventilation then; After feeding argon gas or nitrogen are discharged the air in the quartzy box; Begin heating, after target is heated to 100 ℃, be incubated 1 hour; And then in oxygen-free environment, be warming up to 820 ℃ in 4 hours gradually, be incubated 4 hours again.
The 3rd step stopped heating, was cooled to normal temperature gradually.
Claims (7)
1. the making method of a cadmium telluride target, it is characterized in that: this making method comprises the steps:
The first step is carried out cold-press moulding to the cadmium telluride material, is made into the cadmium telluride target;
In second step, cadmium cadmium target is carried out sintering: cadmium cadmium target is put into heating unit, feed rare gas element, target is heated to 80～150 ℃, be incubated 50～70 minutes; In 4 hours, be warming up to 780～880 ℃ gradually then, be incubated 3～5 hours again;
In the 3rd step, be cooled to normal temperature.
2. cadmium telluride target making method as claimed in claim 1; It is characterized in that: in the above-mentioned the first step; Adopt special mould that the cadmium telluride material is formed; This special mould comprises the top die tool, presses down mould and charging mould, and wherein, the charging mould is provided with 2～7 ° of inclination angles with the joining place that presses down mould.
3. cadmium telluride target making method as claimed in claim 1; It is characterized in that: said heating unit is the quartz tube type process furnace; Quartz is shelved plate to its structure, ventilate quartzy box, insulating sheath, thermofin and ventpipe in order to set gradually from inner chamber to skin, and wherein, the set inside of insulating sheath has heater strip; Ventpipe passes thermofin with the quartzy box of ventilation and stretch in the heating space that becomes of the quartzy box-like of ventilation, so that the feeding rare gas element.
4. cadmium telluride target making method as claimed in claim 3 is characterized in that: the quartzy box of said ventilation comprises two portions, comprises quartz cover part and ventilation quartz cover position, and these two portions leave louver at joining place.
5. like each described cadmium telluride target making method in the claim 1～4, it is characterized in that: in above-mentioned second step, under oxygen-free environment in 4 hours with cadmium telluride target even heating to 810 ℃.
6. like each described cadmium telluride target making method in the claim 1～4, it is characterized in that: in above-mentioned second step, soaking time is 1 hour for the first time.
7. like each described cadmium telluride target making method in the claim 1～4, it is characterized in that: in above-mentioned second step, all processes all are under oxygen-free environment, to carry out.
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| CN2012101156959A CN102634756B (en) | 2012-04-19 | 2012-04-19 | Preparation method of cadmium telluride target |
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| CN2012101156959A CN102634756B (en) | 2012-04-19 | 2012-04-19 | Preparation method of cadmium telluride target |
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| CN102634756A true CN102634756A (en) | 2012-08-15 |
| CN102634756B CN102634756B (en) | 2013-08-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805788A (en) * | 2017-11-08 | 2018-03-16 | 清远先导材料有限公司 | The preparation method of zinc telluridse target |
| CN110127633A (en) * | 2019-06-25 | 2019-08-16 | 先导薄膜材料（广东）有限公司 | A kind of cadmium telluride target and preparation method thereof |
| CN114195518A (en) * | 2021-11-11 | 2022-03-18 | 深圳市众诚达应用材料科技有限公司 | Zinc telluride target, preparation method and thin-film solar cell thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102203954A (en) * | 2008-10-31 | 2011-09-28 | Aqt太阳能公司 | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
| CN102400004A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Manufacturing methods of tungsten-titanium alloy target billet and target material |
-
2012
- 2012-04-19 CN CN2012101156959A patent/CN102634756B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102203954A (en) * | 2008-10-31 | 2011-09-28 | Aqt太阳能公司 | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
| CN102400004A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Manufacturing methods of tungsten-titanium alloy target billet and target material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805788A (en) * | 2017-11-08 | 2018-03-16 | 清远先导材料有限公司 | The preparation method of zinc telluridse target |
| CN110127633A (en) * | 2019-06-25 | 2019-08-16 | 先导薄膜材料（广东）有限公司 | A kind of cadmium telluride target and preparation method thereof |
| CN114195518A (en) * | 2021-11-11 | 2022-03-18 | 深圳市众诚达应用材料科技有限公司 | Zinc telluride target, preparation method and thin-film solar cell thereof |
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| CN102634756B (en) | 2013-08-28 |
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Owner name: CNBM (CHENGDU) OPTOELECTRONIC MATERIALS CO., LTD. Free format text: FORMER NAME: CHENGDU COE APOLLO SOLAR CO., LTD. |
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Address after: 610200 Sichuan city of Chengdu province Shuangliu Southwest Airport Economic Development Zone off three road No. 485 Patentee after: CNBM (CHENGDU) OPTOELECTRONIC MATERIAL CO., LTD. Address before: 610200 Sichuan city of Chengdu province Shuangliu Southwest Airport Economic Development Zone off three road No. 485 Patentee before: Chengdu COE Apollo Solar Co., Ltd. |