CN102534518B - Backboard fabricating method - Google Patents
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- CN102534518B CN102534518B CN 201110452048 CN201110452048A CN102534518B CN 102534518 B CN102534518 B CN 102534518B CN 201110452048 CN201110452048 CN 201110452048 CN 201110452048 A CN201110452048 A CN 201110452048A CN 102534518 B CN102534518 B CN 102534518B
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Abstract
The invention discloses a backboard fabricating method, comprising the following steps of: providing a backboard casting piece; forging the backboard casting piece at a temperature of 800-1000 DEG C so as to form a backboard blank; and processing the backboard blank so as to form a backboard. According to the backboard fabricating method disclosed by the invention, the backboard with a finer and more uniform inner organization structure can be obtained, so that the backboard is prevented from distortion and deformation. On one hand, a deviation between each part of a target and a silicon wafer substrate is reduced, and the quality of a coating film is improved; and on the other hand, the service life of a sputtering target assembly is prolonged.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular to the making method of backboard.
Background technology
In large-scale integrated circuit fabrication process of modern times, magnetron sputtering with its sputtering raste height, the substrate temperature rise is low, film-Ji bonding force is good etc., and advantage becomes the most excellent substrate coating technology.
In the magnetron sputtering membrane process, target material assembly constitutes by the target that meets sputtering performance with certain intensity was combined, was had to described target backboard.Described backboard not only is assembled in the sputter base station at described target material assembly and plays a supporting role, and it has the effect of conduction heat, is used for the heat radiation of magnetron sputtering technique target.In the magnetron sputtering membrane process, the target material assembly Working environment is comparatively harsh.Target material assembly is in the bigger magnetic field of high temperature, high-voltage electric field and magneticstrength, and positive 10
-9Under the high vacuum environment of Pa, be subjected to various high energy ion bombardments, cause target generation sputter, and the target atom of the neutrality that sputters or molecule deposition form film at substrate.The backboard of target material assembly in the process of sputter is because crystal grain rises big and crystal grain is inhomogeneous, cause the backboard torsional deformation, deviation between directly causing on the one hand at the bottom of target each several part and the silicon wafer-based, make the abnormal parameters of plated film, influence the follow-up unicircuit quality of making, can influence the work-ing life of sputtering target material on the other hand.
Therefore, need come the crystal grain of even refinement backboard by forging technology when making backboard, target material assembly is used this backboard can improve service efficiency and work-ing life.But, forge the method for crystal grain of the even refinement backboard of technology at present is that all right ripe.Be example with the brass backboard, contain a certain amount of zinc element in the brass backboard, zinc is bcc metals, and backboard is prone to the phenomenon of warm fragility in the process of forging; Simultaneously, be distributed on the crystal boundary owing to also exist lead, bismuth detrimental impurity and the backboard metallic copper of trace to form the low melting point eutectic film in the brass backboard, forge the phenomenon that easily produces intergranular failure in the process.
Therefore, be necessary to propose a kind of making method of new backboard, with the crystal grain of the backboard that overcomes prior art equal defective of even not enough refinement inadequately.
Summary of the invention
The object of the present invention is to provide a kind of making method of backboard, to obtain all backboards of even enough refinements of internal organizational structure, prevent the backboard torsional deformation.
For solving above-mentioned topic, the making method of a kind of backboard of the present invention is characterized in that, comprising:
The backboard foundry goods is provided;
At 800 ℃～1000 ℃, described backboard foundry goods is forged, form the backboard blank;
Described backboard blank is handled, formed backboard.
Optionally, described forging comprises five stages, be respectively the fs forge, subordinate phase forges, the phase III forges, the quadravalence section forges with five-stage and forges.
Optionally, before the described fs forges, the described fs forges and described subordinate phase forge between, the described phase III forges and described quadravalence section forge between, described quadravalence section forges and described five-stage is heat-treated between forging.
Optionally, described heat treated temperature is 800 ℃～1000 ℃.
Optionally, the described fs forges to compression forges, be of a size of after the described fs forges the fs forge before size 1/3rd to 1/2nd, form the fs to forge intermediate;
Described subordinate phase forges to stretching forges, and is of a size of subordinate phase before described subordinate phase forges and forges 1/3rd to 1/2nd of back size, forms subordinate phase and forges intermediate;
The described phase III forges to compression forges, be of a size of after the described phase III forges the phase III forge before size 1/3rd to 1/2nd, form the phase III to forge intermediate;
Described quadravalence section forges to stretching forges, and is of a size of the quadravalence section before described quadravalence section forges and forges 1/3rd to 1/2nd of back size, forms the quadravalence section and forges intermediate;
Described five-stage forges to compression forges, and is of a size of five-stage after described five-stage forges and forges 1/3rd to 1/2nd of preceding size, forms the backboard blank.
Optionally, with described fs section hit mesosome clockwise upset 80 degree～100 degree forge and form second and forge intermediate, with described subordinate phase forge intermediate clockwise upset 80 degree～100 degree forge and form the 3rd and forge intermediate, the described phase III is forged intermediate turns over 80 degree～100 degree clockwise and forge and form the 4th and forge intermediate.
Optionally, with described fs section hit mesosome counterclockwise upset 80 degree～100 degree forge and form second and forge intermediate, with described subordinate phase forge intermediate counterclockwise upset 80 degree～100 degree forge and form the 3rd and forge intermediate, with the described phase III forge intermediate counterclockwise upset 80 degree～100 degree forge and form the 4th and forge intermediate.
Optionally, described time that forges of forging in each stage is 2min～3min.
Optionally, the described pressure that forges that forges is 300 tons～850 tons each stage.
Optionally, describedly described backboard blank is treated to solid solution aging handles.
Optionally, described solid solution aging is handled and is carried out suddenly in two steps, is respectively first step and second step, and the temperature of described first step is 500 ℃～800 ℃, and insulation 2h～4h, and the temperature of described second step is 200 ℃～500 ℃, and insulation 1h～3h.
Optionally, the method that forms described backboard foundry goods is handled for the metal materials and parts being carried out the fusion foundry goods.
Optionally, described metal materials and parts are copper alloy, aluminium alloy or are hardness, electroconductibility and the similar metal or alloy of copper.
Optionally, the temperature of described fusion foundry goods processing is 800 ℃～1000 ℃.
Compared with prior art, technical solution of the present invention has the following advantages:
(1) 800 ℃～1000 ℃ forge can be with the easier close grain that is broken for of the column crystal of backboard foundry goods, can better repair the pore of above-mentioned backboard foundry goods inside, and then make its internal structure by the loose consolidation that becomes, can access more all backboards of even enough refinements (grain size is 100 μ m～200 μ m) of internal organizational structure, prevent the backboard torsional deformation.Deviation between reducing on the one hand at the bottom of target each several part and the silicon wafer-based, the quality of raising plated film, the work-ing life of improving the sputtering target material assembly on the other hand.
(2) forge fs in the step forge, the phase III forges with five-stage forges to compression and forge, subordinate phase forges to forge to stretching with the quadravalence section and forges, the process that forges forges for compression and stretching forges and hockets, can make backboard foundry goods and each forge intermediate distortion maximization, can also maximized refinement forge the crystal grain of intermediate with even backboard foundry goods and each.
(3) forge in the step and to forge intermediate, second with first and forge intermediate, the 3rd and forge intermediate and the 4th and forge intermediate 80 degree～100 degree that overturn clockwise or counterclockwise successively and forge, can be on all directions better refinement backboard foundry goods and each stage forge the crystal grain of intermediate, and better homogenizing backboard foundry goods and each stage forge the crystal grain of intermediate.
(4) adopt two steps that described backboard blank is carried out solid solution aging and handle, namely first step is backboard blank heating to 500 ℃～800 ℃, and insulation 2h～4h.Backboard blank heating to 200 after second step is handled first step ℃～500 ℃, and insulation 1h～3h, thereby can better form the hardness that unidirectional sosoloid increases backboard, hardness can reach more than the 100HV, can also obtain the less and uniform backboard of grain structure of crystalline-granular texture, grain-size is 100 μ m～200 μ m.
Description of drawings
Fig. 1 is the schematic flow sheet of the backboard making method of the embodiment of the invention;
Fig. 2 to Fig. 8 is the synoptic diagram according to flow process shown in Figure 1.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Just as described in the background section, the backboard that prior art is made, the torsional deformation phenomenon has appearred in the inhomogeneous and not enough refinement of interior tissue.In order to overcome above-mentioned defective, the invention provides a kind of making method of backboard, changed the internal organizational structure of backboard, make the weave construction refinement and evenly more of backboard.
The embodiment of the invention provides a kind of making method of backboard, as shown in Figure 1, comprising:
Step S11 provides the metal materials and parts;
Step S12 carries out the fusion foundry goods to described metal materials and parts and handles, and forms the backboard foundry goods;
Step S13 forges described backboard foundry goods, forms the backboard blank;
Step S14 carries out solid solution aging to described backboard blank and handles, and forms backboard.
Below in conjunction with accompanying drawing the method shown in above-mentioned Fig. 1 is elaborated.
At first performing step S11 provides the metal materials and parts.
The materials and parts of metal described in the present embodiment can be copper alloy or aluminium alloy.In other embodiments, described metal materials and parts can also be tungstenalloy, titanium alloy, perhaps can also be the similar alloy of hardness, electroconductibility and copper.
In actual applications, the metal materials and parts can be the parts after cutting off from ingot metal, the shape of metal materials and parts, according to the actual requirement of applied environment, sputtering equipment, can be in right cylinder, rectangular parallelepiped, annular, cone or other analogous shapes (comprising regular shape and irregularly shaped) any.
Then performing step S12 carries out the fusion foundry goods to described metal materials and parts and handles, and forms the backboard foundry goods.
Be example with the copper alloy, described metal materials and parts be placed on carry out fusion in the vacuum melting furnace that melt temperature is 800 ℃～1000 ℃.If temperature is less than 800 ℃, the metal materials and parts can not fusion; If temperature greater than 1000 ℃, easily causes the waste of energy.And in the process of molten metal materials and parts, also need described vacuum melting furnace is bled, to reduce the probability that gas in the described vacuum melting furnace and brass fused solution react, therefore in fusion, bleed, make that hydrogen and/or the oxygen in the described vacuum melting furnace is controlled in admissible scope.
In addition, if the metal materials and parts are aluminium alloy, for guaranteeing the quality of fusion, in described vacuum melting furnace, add protium and boron.Wherein, boron (for example boron trichloride) can be used for removing nitride, carbide and oxide compound from molten aluminum liquid, improves aluminium backboard casting quality.
With being cooled behind the molten metal materials and parts liquid inflow mold and tentatively being frozen into certain thickness backboard foundry goods, cooled off by for example types of cooling such as water spray or spraying steam more then, make the backboard foundry goods solidify fully and moulding.In the present embodiment, as shown in Figure 2, described backboard foundry goods A is right cylinder, and its diameter range is 170mm～210mm, height H
aScope is 300mm～400mm, and preferable diameter is 200mm, preferred height H
aBe 300mm.
Step S13 forges described backboard foundry goods, forms the backboard blank;
The step that forges in the present embodiment mainly is in order to eliminate casting flaws such as the inner original cast structure of backboard foundry goods is loose, optimize the heterogeneous microstructure of backboard foundry goods inside, the column crystal of backboard foundry goods is broken for close grain, repair the pore of above-mentioned backboard foundry goods inside, and then make its internal structure by the loose consolidation that becomes.
Forge described in the present embodiment and comprise forging of five stages, be respectively the fs to forge to five-stage and forge, wherein, before described forging of per stage, all heat-treat.Be specially:
The backboard foundry goods is carried out carrying out after the thermal treatment first time fs forge, form the fs to forge intermediate.
Describedly carry out the thermal treatment first time and comprise: described backboard foundry goods A is placed thermal treatment unit; in described thermal treatment unit, can charge into controlled atmosphere or protective atmosphere; rare gas element for example, temperature is heated to 800 ℃～1000 ℃, and insulation is heated evenly to its inside.If Heating temperature is less than 800 ℃, backboard foundry goods A is not heated fully, hardness ratio is big and can't forge technology or be easy to generate crackle when it is forged, if Heating temperature is greater than 1000 ℃, can cause the waste of heat energy on the one hand, the backboard foundry goods is too soft on the other hand, also is not easy to forge technology.
In conjunction with Fig. 2 and Fig. 3, the backboard foundry goods A after the thermal treatment first time is carried out the fs forge, form the fs to forge intermediate B.The described fs forges to forging the end face A1 of backboard foundry goods A, and namely the fs forges the height H into compression backboard foundry goods A
a, when its minimizing 1/3rd or two/for the moment, the fs forges end of processing, and the pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is generally 2min～3min, and the formation fs forges intermediate B.It is too big to forge pressure, easily exceeds the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then backboard foundry goods A cools off and is difficult for forging; The time that forges is too short, and then the deflection of backboard foundry goods A is not enough.In the present embodiment, the fs forges intermediate B and is similarly right cylinder, its height H
bBe backboard foundry goods height H
a1/3rd to 1/2nd, be preferably 1/3rd.In the present embodiment, it is 230mm～280mm that the fs forges the intermediate B diameter, height H
bBe 100mm～200mm, diameter is preferably 280mm, height H
b(subscript) is preferably 100mm.
Then, will forge intermediate B the fs and carry out the thermal treatment second time, specifically can be with reference to the thermal treatment first time.Fs after the thermal treatment second time is forged clockwise upset 80 degree～100 of intermediate B to be spent, present embodiment is preferably 90 degree, then, in conjunction with Fig. 3 and Fig. 4, the side B2 that the described fs is forged intermediate B carries out subordinate phase and forges, it is stretched, and the side length that will forge intermediate B the fs (is the height H that forges intermediate the fs
b) be stretched to the length C that subordinate phase forges intermediate C
aIn time, finish, and this moment, subordinate phase forged the length C of intermediate C
aForge the height H of intermediate B for the fs
bTwice to three times.The pressure that forges that the above-mentioned stage forges process is 300 tons～750 tons, and the time of forging is 2min～3min.Form subordinate phase and forge intermediate C.It is too big to forge pressure, easily exceeds the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then the fs forges the intermediate B cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate B not enough the fs.It is rectangular parallelepiped that described subordinate phase forges intermediate C.In the present embodiment, subordinate phase forges the length C of intermediate C
aBe 200mm～600mm, width C
bWith height C
cBe 130mm～170mm all, in the present embodiment, subordinate phase forges the length C of intermediate C
aForge the height H of intermediate B for the fs
bBe preferably three times, subordinate phase forges the length C of intermediate C
aBe preferably 300mm, width C
bWith height C
cAll be preferably 150mm.
Then, subordinate phase is forged intermediate C carry out thermal treatment for the third time, specifically can be with reference to the thermal treatment first time.Subordinate phase after the thermal treatment is for the third time forged intermediate C continue 80 degree of upset clockwise～100 degree, present embodiment is preferably 90 degree, foursquare the C1 that described subordinate phase is forged intermediate C in conjunction with Fig. 4 and Fig. 5 carries out the phase III and forges, and subordinate phase forged the length C of intermediate C
aBe compressed to the height D that the phase III forges intermediate D
cIn time, finish, and phase III this moment forges the height D of intermediate D
cIt is the length C that subordinate phase forges intermediate C
a1/3rd to 1/2nd, the pressure that forges in above-mentioned stage is 300 tons～750 tons, the time of forging is 2min～3min, forms the phase III to forge intermediate D.It is too big to forge pressure, easily exceeds the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then subordinate phase forges intermediate C cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate C not enough for subordinate phase.It is square (comprising the first side D1 and the second side D2) that the described phase III forges intermediate D.In the present embodiment, the phase III forges the height D of intermediate D
c, length D
aAnd width D
bAll be 66mm～300mm.Phase III forges the height D of intermediate D
cBe preferably the length C that subordinate phase forges intermediate C
a1/3rd, be 100mm.
In other embodiments, as shown in Figure 6, the phase III forges intermediate and also can be rectangular parallelepiped D ' (comprise the first side D1 ' and the second side D2 ', the described first side D1 ' is rectangle, and the second side D2 ' is square).In the present embodiment, the phase III forges the height D of intermediate D '
c' be 66mm～300mm, length D
a' and width D
b' be 170mm～220mm.Phase III forges the height D of intermediate D '
c' be preferably the length C that subordinate phase forges intermediate C
a1/3rd, be 100mm, length D
a' and width D
b' be preferably 200mm.
Then, will forge intermediate D the phase III and carry out the 4th thermal treatment, specifically can be with reference to the thermal treatment first time.Phase III after the 4th thermal treatment is forged intermediate D continue 80 degree of upset clockwise～100 degree, present embodiment is preferably 90 degree, in conjunction with Fig. 5, Fig. 6 and Fig. 7, the first side D1 (also can be D1 ') that the described phase III is forged intermediate D carries out the quadravalence section and forges, and makes square D (also can be rectangular parallelepiped D ') height D
c(or D
c') direction stretches, i.e. the 3rd height D that forges intermediate
c(or D
c') be stretched to the length E that the quadravalence section forges intermediate E
aIn time, finish, and the pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is 2min～3min, forms the quadravalence section and forges intermediate E.It is too big to forge pressure, easily exceeds the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then the phase III forges intermediate D cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate D not enough the phase III.It is rectangular parallelepiped that described quadravalence section forges intermediate E, and to forge intermediate C measure-alike with subordinate phase.Described quadravalence section forges the length E of intermediate E
aForge the height D of intermediate D with the phase III
c(or D
c') ratio be 3: 1～2: 1, in the present embodiment, the quadravalence section forges the length E of intermediate
aBe 200mm～600mm, width E
bWith height E
cAll be 130mm～170mm.The length Ea and the 3rd that the quadravalence section forges intermediate E forges the height D of intermediate D
c(or D
c') ratio be preferably 3: 1, the quadravalence section forges the length E of intermediate E
aBe preferably 300mm, width E
bWith height E
cBe preferably 150mm.
Then, the quadravalence section is forged intermediate E carry out the 5th thermal treatment, specifically can be with reference to the thermal treatment first time.In conjunction with Fig. 7 and Fig. 8, the first side E1 that the quadravalence section after the 5th thermal treatment is forged intermediate E forges, and makes the quadravalence section forge the height E of middle E
cCompression forms backboard blank F, and described backboard blank is right cylinder, the latter's height H f and the former height E
cBetween ratio be 1: 3～1: 2, then five-stage forges end.The pressure that forges in above-mentioned stage is 300 tons～750 tons, and the time of forging is 2min～3min.It is too big to forge pressure, easily exceeds the elastic limit of backboard foundry goods; It is too little to forge pressure, makes to forge increased frequency, lowers efficiency, and makes that the time that forges is elongated, and then the quadravalence section forges the intermediate E cooling and is difficult for forging; The time that forges is too short, and then to forge the deflection of intermediate E not enough for the quadravalence section.In the present embodiment, the diameter of backboard blank F is 530mm～580mm, height H
fBe 39mm～85mm, the height H of backboard blank F
fThe height E of E in the middle of forging with the quadravalence section
cBetween ratio be preferably 1: 3, diameter is preferably 550mm, height H
fBe preferably 50mm, the production dimensional requirement of above-mentioned size conforms backboard blank.
Before forging in each stage, carry out heat treatment step, can change the backboard foundry goods and forge the weave construction of the inside of intermediate with each, make backboard foundry goods and each forge intermediate and eliminate stress and softened, improve its plasticity, make that finally the internal organizational structure of backboard blank is even.
Subordinate phase in the present embodiment forge to the quadravalence section forge make in the process backboard foundry goods overturn clockwise successively 80 the degree～100 the degree, form respectively that subordinate phase forges intermediate, the phase III forges intermediate and the quadravalence section forges intermediate, all forge on all directions of backboard foundry goods, the better crystal grain of refinement backboard foundry goods, and the better crystal grain of homogenizing backboard foundry goods.In other embodiments, also can to the backboard foundry goods overturn counterclockwise successively 80 the degree～100 the degree.
In this enforcement forge fs in the step forge, the phase III forges forges to compression forges with five-stage, is of a size of 1/3rd to 1/2nd of size before forging after described compression forges; Subordinate phase forges to forge to stretching with the quadravalence section and forges, being of a size of before described stretching forges stretches forges 1/3rd to 1/2nd of back size, can make backboard foundry goods and each forge intermediate distortion maximization, can also maximized refinement forge the crystal grain of intermediate with even backboard foundry goods and each.If deflection is too little, then backboard foundry goods and each deformability that forges intermediate are not enough, thereby miss one's aim; If deflection is too big, make that then forging technology is difficult to control.
Forge described in the present embodiment and can adopt air hammer (Air Hammer) to finish, it is known for those skilled in the art, so do not repeat them here.In other embodiments, described forging also can be flat-die forging, die forging, jumping-up, extruding, die forging, closed die forging and enclosed upsetting etc.
Then, performing step S14 carries out solid solution aging to described backboard blank and handles, and forms backboard;
It is that alloy is heated to the unidirectional district's insulation of high temperature certain hour that solid solution aging is handled, and forms unidirectional sosoloid, and cooling then is to obtain the thermal treatment process of saturated solid solution.Solution treatment in the present embodiment need divide two steps to carry out.
At first, the backboard blank is heated to 500 ℃～800 ℃ in heating unit, is incubated 2h～4h then.
Then, continue the backboard blank is heated to 200 ℃～500 ℃ in heating unit, be incubated 1h～3h then.
Divide two steps to carry out solution treatment, on the one hand can be so that the crystal grain of backboard blank be not easy to grow up, the better effects if of backboard blank uniform crystal particlesization and refinement, can obtain the less and uniform backboard of grain structure of crystalline-granular texture, grain-size is 100 μ m～200 μ m, thereby another aspect can better form the hardness that unidirectional sosoloid increases backboard, and hardness can reach more than the 100HV.Need to prove if there is not this operation, if or solid solution aging handle and to be regardless of that above-mentioned two steps are carried out then the hardness of backboard can be below 100HV.
Then, in air, described betrayal blank is cooled to normal temperature, forms backboard.
Adopt the making method of backboard of the present invention, following advantage arranged:
(1) 800 ℃～1000 ℃ forge can be with the easier close grain that is broken for of the column crystal of backboard foundry goods, can better repair the pore of above-mentioned backboard foundry goods inside, and then make its internal structure by the loose consolidation that becomes, can access more all backboards of even enough refinements (grain size is 100 μ m～200 μ m) of internal organizational structure, prevent the backboard torsional deformation.Deviation between reducing on the one hand at the bottom of target each several part and the silicon wafer-based, the quality of raising plated film, the work-ing life of improving the sputtering target material assembly on the other hand.
(2) forge fs in the step forge, the phase III forges with five-stage forges to compression and forge, subordinate phase forges to forge to stretching with the quadravalence section and forges, the process that forges forges for compression and stretching forges and hockets, can make backboard foundry goods and each forge intermediate distortion maximization, can also maximized refinement forge the crystal grain of intermediate with even backboard foundry goods and each.
(3) forge in the step and to forge intermediate, second with first and forge intermediate, the 3rd and forge intermediate and the 4th and forge intermediate 80 degree～100 degree that overturn clockwise or counterclockwise successively and forge, can be on all directions better refinement backboard foundry goods and each stage forge the crystal grain of intermediate, and better homogenizing backboard foundry goods and each stage forge the crystal grain of intermediate.
(4) adopt two steps that described backboard blank is carried out solid solution aging and handle, namely first step is backboard blank heating to 500 ℃～800 ℃, and insulation 2h～4h.Backboard blank heating to 200 after second step is handled first step ℃～500 ℃, and insulation 1h～3h, thereby can better form the hardness that unidirectional sosoloid increases backboard, hardness can reach more than the 100HV, can also obtain the less and uniform backboard of grain structure of crystalline-granular texture, grain-size is 100 μ m～200 μ m.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (7)
1. the making method of a backboard is characterized in that, comprising:
The backboard foundry goods is provided, the method that forms described backboard foundry goods is: the metal materials and parts are put into vacuum melting furnace carry out the processing of fusion foundry goods, described metal materials and parts are copper alloy or aluminium alloy, when the metal materials and parts are copper alloy, in described vacuum melting furnace, bleed, when the metal materials and parts are aluminium alloy, in described vacuum melting furnace, add protium and boron;
At 800 ℃～1000 ℃, described backboard foundry goods is forged, form the backboard blank, described forging comprises five stages, being respectively the fs forges, subordinate phase forges, phase III forges, the quadravalence section forges with five-stage and forges, forming the fs respectively forges intermediate, subordinate phase forges intermediate, phase III forges intermediate, the quadravalence section forges intermediate and backboard blank, with the described fs forge intermediate clockwise upset 80 degree～100 degree forge and form subordinate phase and forge intermediate, with described subordinate phase forge intermediate clockwise upset 80 degree～100 degree forge and form the phase III and forge intermediate, the described phase III is forged intermediate turns over 80 degree～100 degree clockwise and forges and form the quadravalence section and forge intermediate, perhaps
With the described fs forge intermediate counterclockwise upset 80 degree～100 degree forge and form subordinate phase and forge intermediate, with described subordinate phase forge intermediate counterclockwise upset 80 degree～100 degree forge and form the phase III and forge intermediate, with the described phase III forge intermediate counterclockwise upset 80 degree～100 degree forge and form the quadravalence section and forge intermediate
The described time that forges that each stage forges is 2min～3min, and the described pressure that forges that each stage forges is 300 tons～850 tons;
Described backboard blank is handled, formed backboard.
2. the making method of backboard as claimed in claim 1, it is characterized in that, before the described fs forges, the described fs forges and described subordinate phase forge between, the described phase III forges and described quadravalence section forge between, described quadravalence section forges and described five-stage is heat-treated between forging.
3. the making method of backboard as claimed in claim 2 is characterized in that, described heat treated temperature is 800 ℃～1000 ℃.
4. the making method of backboard as claimed in claim 1, it is characterized in that, the described fs forges to compression forges, be of a size of after the described fs forges the fs forge before size 1/3rd to 1/2nd, form the fs to forge intermediate;
Described subordinate phase forges to stretching forges, and is of a size of subordinate phase before described subordinate phase forges and forges 1/3rd to 1/2nd of back size, forms subordinate phase and forges intermediate;
The described phase III forges to compression forges, be of a size of after the described phase III forges the phase III forge before size 1/3rd to 1/2nd, form the phase III to forge intermediate;
Described quadravalence section forges to stretching forges, and is of a size of the quadravalence section before described quadravalence section forges and forges 1/3rd to 1/2nd of back size, forms the quadravalence section and forges intermediate;
Described five-stage forges to compression forges, and is of a size of five-stage after described five-stage forges and forges 1/3rd to 1/2nd of preceding size, forms the backboard blank.
5. the making method of backboard as claimed in claim 1 is characterized in that, describedly described backboard blank is treated to solid solution aging handles.
6. the making method of backboard as claimed in claim 5, it is characterized in that, described solid solution aging is handled and is carried out suddenly in two steps, be respectively first step and second step, the temperature of described first step is 500 ℃～800 ℃, and insulation 2h～4h, the temperature of described second step is 200 ℃～500 ℃, and insulation 1h～3h.
7. the making method of backboard as claimed in claim 1 is characterized in that, the temperature that described fusion foundry goods is handled is 800 ℃～1000 ℃.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104668897B (en) * | 2013-12-03 | 2017-06-30 | 宁波江丰电子材料股份有限公司 | The forming method of backboard |
| CN105586551B (en) * | 2014-10-21 | 2019-05-10 | 宁波江丰电子材料股份有限公司 | The heat treatment method of backboard |
| CN105624622B (en) * | 2014-11-26 | 2018-02-09 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| JP2016198816A (en) * | 2015-04-14 | 2016-12-01 | トヨタ自動車株式会社 | Processing treatment method of casting |
| CN106521430A (en) * | 2015-09-09 | 2017-03-22 | 宁波江丰电子材料股份有限公司 | Production technology of tantalum aluminum target |
| CN107841715A (en) * | 2016-09-20 | 2018-03-27 | 宁波江丰电子材料股份有限公司 | The preparation method of backboard |
| JP6649245B2 (en) * | 2016-12-28 | 2020-02-19 | 株式会社コベルコ科研 | Repair method of backing plate for sputtering target and repaired backing plate |
| CN111321361A (en) * | 2018-12-14 | 2020-06-23 | 宁波江丰电子材料股份有限公司 | Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material |
| CN111378943A (en) * | 2018-12-29 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target alloy back plate |
| CN111644738A (en) * | 2020-06-04 | 2020-09-11 | 宁波江丰电子材料股份有限公司 | Aluminum target material assembly and welding method for reducing deformation of back plate in aluminum target material assembly |
| CN112170753B (en) * | 2020-08-27 | 2022-05-31 | 金嘉品（昆山）金属工业有限公司 | Semiconductor copper back target processing method |
| CN112475802B (en) * | 2020-11-19 | 2023-02-03 | 宁波江丰电子材料股份有限公司 | Method for assembling aluminum target and aluminum alloy back plate |
| CN112779483A (en) * | 2020-12-24 | 2021-05-11 | 徐州捷图机械有限公司 | Treatment method for internal porosity of aluminum alloy |
| CN114000072A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Heat treatment method of copper back plate |
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| CN1425792A (en) * | 2002-09-02 | 2003-06-25 | 上海大学 | Composite heat processing and forming method for reinforced aluminium alloy |
| WO2005094280A2 (en) * | 2004-03-31 | 2005-10-13 | Honeywell International Inc. | High-strength backing plates, target assemblies, and methods of forming high-strength backing plates and target assemblies |
| CN1834281A (en) * | 2005-12-06 | 2006-09-20 | 北京有色金属研究总院 | Two-stage forced solution treatment method for high strength deformed aluminum alloy |
| JP5464352B2 (en) * | 2010-03-05 | 2014-04-09 | 三菱マテリアル株式会社 | Method for producing high purity copper processed material having uniform and fine crystal structure |
| CN102002656B (en) * | 2010-11-10 | 2012-04-25 | 中南大学 | Method for refining precipitation or dispersion strengthening type block copper alloy crystal grains |
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