CN111321361A - Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material - Google Patents
Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material Download PDFInfo
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- CN111321361A CN111321361A CN201811532361.5A CN201811532361A CN111321361A CN 111321361 A CN111321361 A CN 111321361A CN 201811532361 A CN201811532361 A CN 201811532361A CN 111321361 A CN111321361 A CN 111321361A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/08—Making alloys containing metallic or non-metallic fibres or filaments by contacting the fibres or filaments with molten metal, e.g. by infiltrating the fibres or filaments placed in a mould
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
A manufacturing method of a copper-chromium-nickel-silicon alloy back plate for a sputtering target comprises the following steps: providing an alloy melt; carrying out a casting process on the alloy melt to form an alloy ingot; and carrying out a solution treatment process on the alloy ingot, wherein the temperature of the solution treatment process is 980-1020 ℃, and the time is 1-2 h. After the provided alloy solution is cast to form an alloy ingot, the solution treatment process enables the excess phase in the alloy solution to be fully and quickly dissolved, so that the subsequent process is guaranteed, and simultaneously the hardness and the conductivity of the formed alloy meet the requirements.
Description
Technical Field
The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a copper-chromium-nickel-silicon alloy back plate for a sputtering target material.
Background
In the magnetron sputtering, electrons collide with argon atoms in the process of accelerating to fly to a substrate under the action of an electric field to ionize a large amount of argon atoms and electrons, the electrons fly to the substrate, the argon ions accelerate to bombard a target on a target component on a sputtering base station under the action of the electric field, a large amount of target atoms are sputtered, neutral target atoms (or molecules) are deposited on a substrate to form a film, and the purpose of coating the surface of the substrate is finally achieved.
The target material is composed of a target blank according with sputtering performance and a back plate welded with the target blank. The back plate plays a supporting role in the target material and has the effect of conducting heat.
In the magnetron sputtering process of the large-scale integrated circuit, a copper material with high strength, heat conductivity and electric conductivity is required to be used as a back plate material and is arranged on a sputtering machine table, and the target can be effectively sputtered under the action of high vacuum, a magnetic field and an electric field. The alloy manufactured in the prior art has low strength and insufficient hardness, and cannot meet the requirements of back plate materials.
Therefore, a manufacturing method is urgently needed to make the hardness of the manufactured alloy material meet the requirement.
Disclosure of Invention
The invention solves the problems that the alloy manufactured in the prior art has lower strength and insufficient hardness.
To solve the above problems, the present invention provides a method comprising: providing an alloy melt; carrying out a casting process on the alloy melt to form an alloy ingot; and carrying out a solution treatment process on the alloy ingot, wherein the temperature of the solution treatment process is 980-1020 ℃, and the time is 1-2 h.
Optionally, after the solution treatment is performed on the alloy ingot, the method further includes the steps of: and carrying out an aging treatment process on the alloy ingot.
Optionally, the temperature of the aging treatment process is 470-490 ℃, and the time is 3-5 h.
Optionally, after the alloy ingot is subjected to solution treatment and before the alloy ingot after the solution treatment is subjected to aging treatment, the method further includes the steps of: and carrying out water cooling treatment on the alloy ingot, wherein the water cooling treatment time is 1-10 seconds.
Optionally, before providing the alloy melt, providing metallic copper, nickel, copper-chromium alloy and a silicon block, and melting the metallic copper, nickel, copper-chromium alloy and silicon block to form the alloy melt.
Optionally, melting the metal copper, nickel, copper-chromium alloy and silicon block includes: putting the metal copper into smelting equipment, filling inert gas, and heating to 1100-1200 ℃ to form molten copper; adding the metallic nickel into the copper melt, stirring, simultaneously heating to 1400 ℃ and 1500 ℃, and preserving heat for 10-30min to form a copper-nickel alloy melt; adding the silicon block into the copper-nickel alloy melt, stirring, and keeping the temperature for 10-30min to form copper-nickel-silicon alloy melt; and adding the copper-chromium alloy into the copper-nickel-silicon alloy melt, stirring, and keeping the temperature for 10-30min to form an alloy melt.
Optionally, after providing the alloy melt, the method further includes: and carrying out degassing treatment on the alloy melt.
Optionally, providing a carbon tube and magnesium metal particles, extending the carbon tube into the bottom of the alloy melt, wherein the addition amount of the magnesium metal particles is 10-20g per 500kg, standing for 20-30min, and degassing.
Optionally, in the degassing treatment process of the alloy melt, the method further includes: and reducing the temperature of the alloy melt to 1300-1400 ℃.
Optionally, the casting speed of the alloy melt is 380-400kg per minute.
Optionally, before the solution treatment process of the alloy ingot, the method further includes: and forging the alloy ingot.
Optionally, before the forging process of the alloy ingot, the forging process further includes: and carrying out a heat treatment process on the alloy ingot.
The temperature of the heat treatment process is 850-950 ℃.
Compared with the prior art, the technical scheme of the invention has the following advantages:
after the provided alloy melt is cast to form an alloy ingot, the alloy ingot is subjected to solution treatment to ensure the hardness performance of the alloy ingot, the temperature of the solution treatment is controlled to be 980-1020 ℃, and the time is 1-2 h, so that the excessive phase in the alloy melt is fully and quickly dissolved, and the hardness and the conductivity of the formed alloy are ensured to meet the requirements.
Drawings
Fig. 1 to fig. 4 are schematic diagrams of a part of steps of a manufacturing method according to an embodiment.
Detailed Description
Conventionally, a metal alloy melt is cast into an alloy ingot, then forging treatment is performed, and the forged metal alloy ingot is subjected to solution aging treatment.
The inventor analyzes and researches to find that in the alloy material manufactured by the process, the solution treatment process is to heat the alloy to a high-temperature single-phase region for keeping constant temperature, so that the excess phase is fully dissolved in the solid solution and then quickly cooled to obtain the heat treatment process material of the supersaturated solid solution, so that carbides and strengthening phases with fine particles and uniform distribution are precipitated again during aging treatment, and simultaneously, the stress generated by cold and hot processing is eliminated, so that the alloy is recrystallized, and the proper grain size is obtained, and the high-temperature resistance of the alloy is ensured; therefore, the control of the solution treatment process determines the hardness, strength and grain size of the produced alloy.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to fig. 4 are schematic diagrams of a part of steps of a manufacturing method according to an embodiment.
Referring to fig. 1, an alloy melt 200 is provided, wherein the alloy melt 200 is a copper alloy melt.
In this embodiment, before providing the alloy melt 200, metal copper, metal nickel, silicon blocks and metal chromium are provided, and the metal copper, the metal nickel, the metal chromium and the metal chromium are melted to form the alloy melt 200. In this embodiment, a melting device 100 is provided, where the melting device 100 may be a crucible furnace, specifically, the metal copper is loaded into a crucible of an induction furnace, inert gas 10 is filled, and the temperature is raised to 1100-1200 ℃ to form a molten copper; adding the metallic nickel into the copper melt, stirring, simultaneously heating to 1400-1500 ℃, and preserving heat for 10-30min to form a copper-nickel alloy melt; adding the silicon block into the copper-nickel alloy melt, stirring, and keeping the temperature for 10-30min to form copper-nickel-silicon alloy melt; and adding the metal chromium into the copper-nickel-silicon alloy melt, stirring, and keeping the temperature for 10-30min to form an alloy melt.
In this embodiment, the metal copper is first put into the melting equipment 100, specifically, the metal copper is a copper electrolytic sheet, the melting point of copper is 1080 ℃, the temperature inside the melting equipment 100 is heated to 1100 ℃ to 1200 ℃, stirring is performed for 10min to 30min to accelerate melting of the metal copper, when the metal copper is melted, the melting is more sufficient when the temperature is higher, but when the temperature exceeds 1200 ℃, the copper melt is vaporized due to too high temperature, and the energy is consumed very much when the temperature is too high, which is not economical; when the temperature is lower than 1100 ℃, the melting point of the metal copper cannot be reached, or the melting speed is too slow, and the melting is insufficient.
Further, adding the metallic nickel into the copper melt, and stirring for 10min-30min to ensure that the metallic nickel is fully and uniformly melted in the copper melt, wherein the melting point of the metallic nickel is 1453 ℃, and in order to ensure that the metallic nickel is completely melted, the temperature in the smelting equipment 100 is raised to 1400 ℃ -1500 ℃.
Further, adding a silicon block, specifically a silicon block, into the copper-nickel melt, and fully stirring for 10min to 30min to melt the metal silicon and uniformly mix the metal silicon with the copper-nickel alloy melt to form the copper-nickel-silicon alloy melt.
Further, adding the copper-chromium alloy into the copper-nickel-silicon alloy melt, and stirring for 10-30min to melt and uniformly mix the copper-chromium alloy in the copper-nickel-silicon alloy. It should be noted that, because the melting point of pure chromium metal is relatively high, up to 1800 ℃, when adding the chromium metal simple substance to melt, the temperature needs to be further raised, which results in energy waste due to a large amount of energy consumption. In this embodiment, the chromium-copper alloy is added, wherein the content of chromium metal is 5% to 20%. After the steps, the copper-chromium alloy is stirred to be fully melted without raising the temperature in the smelting equipment 100 to over 1800 ℃, so that the energy consumption is greatly reduced, the energy is saved, and the cost is reduced.
In other embodiments, after the metal copper is loaded into the smelting equipment 100, inert gas 10 is filled, and the temperature is raised to 1100-1200 ℃ to form molten copper; adding the silicon block into the copper melt, stirring, simultaneously heating to 1400-1500 ℃, and preserving heat for 10-30min to form a copper-silicon alloy melt; adding the metallic nickel into the copper-silicon alloy melt, stirring, and keeping the temperature for 10-30min to form copper-silicon-nickel alloy melt; and adding the copper-chromium alloy into the copper-silicon-nickel alloy melt, wherein the chromium content in the copper-chromium alloy is 5% -20%, stirring, and keeping the temperature for 10min-30min to form an alloy melt 200.
In this embodiment, after the metal copper is put into the smelting equipment 100, an inert gas 10, specifically, argon gas, is filled into the smelting equipment 100. The purpose is to prevent oxygen or impurity gas in the smelting equipment 100 from entering to oxidize the internal alloy melt 200, and also prevent other impurities from entering into the alloy melt 200, so that the smelting equipment 100 is filled with inert gas 10 to play a role in protection.
In other embodiments, after the metallic copper is placed in the melting facility 100, nitrogen gas is charged into the melting facility 100. Nitrogen is chemically inert and difficult to react with other substances, and can be used as a protective gas like inert gas.
In this embodiment, the obtained copper-chromium-nickel-silicon alloy melt is subjected to a degassing treatment process, so that the alloy melt 200 is free of impurities and oxygen, and the temperature is reduced to 1350 ℃ to 1400 ℃ while standing for 20min to 30 min.
In this embodiment, the degassing process includes providing a carbon tube 12 and magnesium metal particles 11, inserting the carbon tube 12 into the bottom of the alloy melt 200, adding 10-20g of the magnesium metal particles 11 per 500kg, and standing for 20-30 min. And degassing by using high-purity magnesium metal particles, and discharging oxygen, hydrogen and other impurities in the alloy melt 200 out of the alloy melt, so that the internal defects of the finally obtained alloy ingot are reduced, and the conductivity of the alloy ingot is improved. When more than 20g of magnesium metal particles 11 are added into every 500kg of alloy melt after degassing, the magnesium is excessive, so that waste is caused; when the amount of the magnesium metal particles 11 is less than 10g per 500kg of the alloy melt, oxygen and other impurities in the alloy melt 200 cannot be sufficiently removed, resulting in defects in the formed alloy ingot.
In the degassing treatment of the alloy melt, the temperature of the alloy melt 200 is reduced to 1300-1400 ℃ while the alloy melt is kept still, and after the temperature and the time reach standards, the alloy melt is cast to form an alloy ingot 201 (refer to fig. 3).
Specifically, referring to fig. 2, a funnel 21, an ingot mold 20 and a pouring gate are provided, and the alloy melt 200 is poured into the funnel 21 and poured into the ingot mold 20 through the pouring gate; the distance between the bottom of the pouring gate and the top of the liquid level is maintained, so that the pouring gate is prevented from contacting the alloy melt entering the ingot mold 20 in the pouring process, and therefore, impurities or air are prevented from being added into the alloy melt 200 in the pouring process, oxidation occurs or impurities are prevented from being contacted, and the purity of the interior of the alloy melt 200 is prevented from being influenced.
In this embodiment, in the casting process of the alloy solution 200, the speed is controlled to be 380-400 kg/min. In the casting process, the alloy melt 200 is ensured to fluctuate slowly as much as possible, the possibility of introducing impurities or oxygen into the alloy melt 200 in the casting process is reduced, the possibility of oxidation is reduced, in the casting process, the alloy melt entering the ingot mold 20 is ensured to be solidified fully and uniformly as much as possible, the casting speed is ensured not to be too high, the speed of the casting process is not more than 400kg per minute, when the temperature of the alloy melt is reduced and solidified when the temperature of the alloy melt exceeds 400kg per minute, the volume is correspondingly reduced during solidification due to thermal expansion and cold contraction, and if the casting speed is too high, gaps are generated when the difference of volume reduction is in contact with the alloy melt which is cast in, so that defects are generated in the formed alloy; in addition, in order to ensure the efficiency of the whole smelting process and shorten the process time as much as possible, the casting speed is ensured to be not less than 380kg per minute.
In this embodiment, the obtained alloy ingot 201 is subjected to skinning and head and tail removing treatment, that is, irregular parts and oxide layers on the surface of the obtained alloy ingot 201 are removed, so as to ensure the conductivity of the alloy ingot 201.
In this embodiment, the alloy ingot 201 is forged, and in the forging process, the alloy ingot 201 is subjected to a drawing and upsetting process for 2 to 3 times, so that the deformation amount during each drawing and upsetting process is 70% to 80%, and the internal crystal grains of the alloy ingot 201 are sufficiently refined and uniform.
The larger the deformation in each drawing and upsetting process, the better the effect, but when the total deformation exceeds 80%, the alloy ingot 201 cannot bear too large deformation and cracks, and when the total deformation is less than 70%, the effect is not obvious, the process time is prolonged, and the efficiency is reduced.
And carrying out a heat treatment process on the forged alloy ingot 201 at the temperature of 850-950 ℃. The method aims to further release stress among crystal grains in the alloy ingot 201, reduce brittleness of the alloy ingot 201, reduce possibility of cracking of the alloy ingot 201 in a subsequent processing process and improve conductivity of the alloy ingot 201. When the heat treatment process temperature is higher than 950 ℃, the grain size in the alloy ingot 201 grows up, the grain size in the alloy ingot 201 is uneven, and the internal defect of the alloy ingot 201 is caused, and when the heat treatment process temperature is lower than 850 ℃, the time for eliminating the internal stress of the alloy ingot 201 is longer, the time is wasted, and the efficiency is reduced.
Referring to FIG. 4, the alloy ingot is subjected to a solution treatment process, wherein the temperature of the solution treatment process is 980-1020 ℃, and the time is 1-2 h. Providing a solution treatment container 101, controlling the temperature of the solution treatment container 101 to be 980-1020 ℃, wherein the solution treatment process can fully and quickly dissolve the excess phase in the alloy melt 200, the higher the temperature is, the higher the solid solubility of the alloy ingot 201 is, the higher the diffusion speed is, and the required time is short, but when the temperature exceeds 1020 ℃, the alloy ingot 201 generates an overburning phenomenon, so that the surface of the alloy ingot has large-area defects; when the temperature is lower than 980 ℃, the solid solution speed is slow, so that the efficiency of the process is reduced, and the temperature can not reach the solid solution curve, so that the hardness and the conductivity of the alloy ingot 201 after aging can not meet the requirements.
In this embodiment, after the alloy ingot 201 is subjected to solution treatment, the alloy ingot 201 is immediately subjected to water cooling treatment for 1 to 10 seconds, and then the alloy ingot 201 is subjected to an aging treatment process. The strength and the hardness can be obviously changed along with the time, the hardness and the strength of the alloy ingot can be increased after aging, the temperature of the aging treatment process is 470-490 ℃, and the time is 3-5 h. In the aging process, the heating temperature and the heat preservation time of the aging process must be strictly controlled to obtain a relatively ideal strengthening effect.
In this example, the aging temperature was 480 ℃ and the holding time was 3 hours.
In other embodiments, the aging process is performed at 470 ℃ for 5 hours.
In other embodiments, the aging process is carried out at 490 ℃ for 3 hours.
In this embodiment, the alloy ingot 201 after the aging treatment is taken out and naturally cooled in the air to fix the hardness of the alloy ingot 201.
Machining the alloy ingot 201 after the process, removing oxide skin on the surface of the alloy ingot 201 to form a back plate material, detecting the performances of the back plate material such as hardness, conductivity, internal defects, grain size and the like, and then welding the back plate material and a target blank to form a qualified target material.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (13)
1. A manufacturing method of a copper-chromium-nickel-silicon alloy back plate for a sputtering target is characterized by comprising the following steps:
providing an alloy melt;
carrying out a casting process on the alloy melt to form an alloy ingot;
and carrying out a solution treatment process on the alloy ingot, wherein the temperature of the solution treatment process is 980-1020 ℃, and the time is 1-2 h.
2. The method of claim 1, wherein after solution treating the alloy ingot, further comprising the steps of: and carrying out an aging treatment process on the alloy ingot.
3. The method of claim 2, wherein the aging process is performed at 470-490 ℃ for 3-5 hours.
4. The method according to claim 2, wherein after the solution treatment of the alloy ingot and before the aging treatment of the alloy ingot after the solution treatment, the method further comprises the steps of: and carrying out water cooling treatment on the alloy ingot, wherein the water cooling treatment time is 1-10 seconds.
5. The method of claim 1, wherein prior to providing the alloy melt, providing metallic copper, metallic nickel, copper-chromium alloy and silicon block, and melting the metallic copper, metallic nickel, copper-chromium alloy and silicon block to form the alloy melt.
6. The method of claim 5, wherein melting the copper metal, nickel metal, copper-chromium alloy, and silicon mass comprises:
putting the metal copper into smelting equipment, filling inert gas, and heating to 1100-1200 ℃ to form molten copper;
adding the metallic nickel into the copper melt, stirring, simultaneously heating to 1400 ℃ and 1500 ℃, and preserving heat for 10-30min to form a copper-nickel alloy melt;
adding the silicon block into the copper-nickel alloy melt, stirring, and keeping the temperature for 10-30min to form copper-nickel-silicon alloy melt;
and adding the copper-chromium alloy into the copper-nickel-silicon alloy melt, stirring, and keeping the temperature for 10-30min to form an alloy melt.
7. The method of claim 1, wherein after providing the alloy melt, further comprising: and carrying out degassing treatment on the alloy melt.
8. The method according to claim 7, wherein carbon tubes and magnesium metal particles are provided, the carbon tubes are inserted into the bottom of the alloy melt, the magnesium metal particles are added in an amount of 10-20g per 500kg, and the mixture is left for 20-30min to perform degassing treatment.
9. The method of claim 7, wherein the degassing of the alloy melt further comprises: and reducing the temperature of the alloy melt to 1300-1400 ℃.
10. The method as claimed in claim 1, wherein the casting speed of the alloy melt is 380-400 kg/min.
11. The method of claim 1, wherein prior to subjecting the alloy ingot to the solution treatment process, further comprising: and forging the alloy ingot.
12. The method of claim 11, wherein prior to subjecting the alloy ingot to the forging process, further comprising: and carrying out a heat treatment process on the alloy ingot.
13. The method of claim 12, wherein the heat treatment process temperature is 850 ℃ to 950 ℃.
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| CN116875782A (en) * | 2023-07-10 | 2023-10-13 | 宁波江丰电子材料股份有限公司 | Copper-chromium-nickel-silicon alloy backboard and processing method and application thereof |
| CN116926485A (en) * | 2023-08-08 | 2023-10-24 | 宁波江丰电子材料股份有限公司 | Copper-chromium-nickel alloy backboard and preparation method and application thereof |
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| CN116875782A (en) * | 2023-07-10 | 2023-10-13 | 宁波江丰电子材料股份有限公司 | Copper-chromium-nickel-silicon alloy backboard and processing method and application thereof |
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