CN102633227B - Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure - Google Patents
Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure Download PDFInfo
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- CN102633227B CN102633227B CN201210071296.7A CN201210071296A CN102633227B CN 102633227 B CN102633227 B CN 102633227B CN 201210071296 A CN201210071296 A CN 201210071296A CN 102633227 B CN102633227 B CN 102633227B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000013016 damping Methods 0.000 claims description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 238000013461 design Methods 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
A film pressure damp adjustable device for an MEMS (micro-electromechanical system) inertial sensor structure mainly comprises a damp cap, a bonding substrate, a silicon dioxide layer, a silicon nitride layer, a bonding metal layer, resistor anodes, resistor cathodes, an upper pole plate electrode, a lower pole plate electrode, a fixed base, a silicon elastic film, a concave cavity, an upper pole plate metal layer, a lower pole plate metal layer, an upper pole plate metal layer outgoing line, a lower pole plate metal layer outgoing line, annular resistors, annular resistor anode outgoing lines and annular resistor cathode outgoing lines. The two heating annular resistors and a pair of static metal pole plates are arranged on the bonding substrate, and the film pressure damp factor of a device to be adjusted can be decreased or increased by one to two orders of magnitude so as to realize modulation of the Q value of the MEMS sensor after packaging. The film pressure damp adjustable device is compact and ingenious in structural design, convenient in operation, rapid in response and high in adjustable precision.
Description
Technical field
The present invention relates to the press-filming damping tunable arrangement after a kind of MEMS inertial sensor is manufactured, belong to micro electronmechanical field of sensing technologies.
Background technology
Sensor is the front end of signal acquisition in current information technology, technology of Internet of things field, is bringing into play effect important as " eyes ".MEMS sensor with small size, micro-power consumption, low cost, can integrated powerful advantages attracting the demand of All Around The World.Technically, the external fully reinforced commercial product that formed, be applied to the high-tech sectors such as mobile phone, automobile, electronic game, Long-distance Control, intelligent building, robot, navigation, guidance, and domestic weak foundation does not have industrialization, most of product dependence on import, but its MEMS inertial sensor product to part high performance index is abroad embargoed, be badly in need of because of national defense safety, develop in the urgent need to independent development.
It is domestic that to be mainly reflected in processing consideration in the technical bottleneck aspect MEMS sensor relatively backward, be difficult to ensure design accuracy, and manufacture after product encapsulation technology lack, can not meet index request, cause that device reliability is low, poor stability, finally be presented as that precision is not high, durability is not strong.Therefore, under this technical conditions, for the crucial MEMS inertia device of small lot of independent development, as after once accelerometer, gyro sensor package complete, characteristic is shaped, and index is defective can only scrap, and causes yield rate low, processing cost increases severely, and under existing condition, cannot meet urgent need.This technology away from index, proposes a kind of improved device for properties of product after the manufacture of China MEMS inertial sensor just, to reach the object that regulates sensor performance, solves the sensor accuracy problem causing because of process conditions deficiency by regulating system damping.Can also solve sensor of the same race because of the different demands that regulate device performance of working environment, to reach similar multiplex object simultaneously.
The formation of damping designs, makes and encapsulate whole process, to the dynamic performance parameter of device, as response time, Frequency Response, sensitivity, the linearity, noise etc. have a great impact through device.Along with the microminiaturization of sensor, its characteristic size has reached micron dimension, the skin effect of structure is presented as the dominant mechanism factor of damping, make the effect of surface damp power far exceed body force, determine the damping characteristic of system, so by controlling fluid damping to ensure the performance indications of MEMS inertia device, improve its designed capacity, the development of carrying out the MEMS inertia device with independent intellectual property right had great importance.
Summary of the invention
Goal of the invention
Object of the present invention is exactly the deficiency for background technology, designs a kind of press-filming damping tunable arrangement of MEMS device, obtains damping demand farthest to meet different MEMS devices in different operating environment, makes the detection data of MEMS device accurately, reliably.
Technical scheme
Primary structure of the present invention by: damper cap, bonded substrate, silicon dioxide layer, silicon nitride layer, bonding metal layer, resistance positive pole, resistance negative pole, top crown electrode, bottom crown electrode, fixed pedestal, silicon elastic film, cavity, top crown metal level, bottom crown metal level, top crown metal level lead-out wire, bottom crown metal level lead-out wire, ring resistance, ring resistance positive outside wire, ring resistance negative outside wire form, in bonded substrate 2 doped with huge ring resistance 21, 22, ring resistance 21, 22 surrounding and the middle section enclosing are deposited with silicon dioxide layer 3, on the silicon dioxide layer 3 of bonded substrate 2 middle sections, be manufactured with bottom crown metal level 18, on the silicon dioxide layer 3 of bonded substrate 2 peripheral regions, be deposited with silicon nitride layer 54, on the silicon dioxide layer 3 of the lower area of bonded substrate 2, be manufactured with ring resistance positive pole 6, 8, ring resistance negative pole 7, 9, bottom crown electrode 11, on the silicon nitride layer 4 of peripheral regions, be deposited with bonding metal layer 5, on the silicon dioxide layer 3 of the central area between bottom crown electrode 11 and ring resistance negative pole 9, be deposited with silicon nitride layer 4, on silicon nitride silicon 4, be deposited with top crown electrode 10, ring resistance 21, 22 two ends are respectively by ring resistance positive outside wire 22, 24, ring resistance negative outside wire 23, 25 are incorporated into ring resistance positive pole 6, 8, ring resistance negative pole 7, 9, bottom crown metal level 18 is connected with bottom crown electrode 11 by bottom crown metal level lead-out wire 19, on bonding metal layer 5, airtight bonding has bonding cap 1, the inner side processing rear formation silicon elastic film 13 of cavity 14 and the housing pedestal 12 of bonding cap 1, the inwall of cavity 14 is deposited with top crown metal level 15, the lower surface of housing pedestal 12 be deposited with bonding metal layer 16, in cavity 14 after bonding cap 1 and the firm bonding of bonded substrate 2, be sealed with dilatancy gas.
Described bonding metal layer 5,16, top crown metal level 15, bottom crown metal level 18, structural material is consistent, by 2 layers of metals composition, is provided with titanium layer 28, i.e. Ti layer on silicon substrate 27 tops, is provided with gold layer, i.e. Au layer on titanium layer 29 tops.
Operation principle
Be produced on ring resistance in bonded substrate and heat the gas that makes to be encapsulated in cavity and be heated and expand, cause silicon elastic film distortion to skin protuberance, and then change the distance between device to be adjusted and silicon elastic film, can make like this press-filming damping of device to be adjusted become large; The bottom crown electrode being produced in bonded substrate produces electrostatic force with the top crown electrode that is produced on cavity inner side in the situation that switching on, cause silicon elastic film distortion depression to the inside, and then change the distance of device to be adjusted between silicon elastic film, can make like this press-filming damping of device to be adjusted diminish.
Beneficial effect
The present invention has obvious advance compared with background technology, this device adopts global design, taking bonded substrate as carrier, in bonded substrate, be manufactured with 2 groups of ring resistances and be incorporated into the side of bonded substrate by resistance electrode lead-out wire, on the silicon dioxide insulating layer of bonded substrate, be manufactured with bottom crown metal electrode, on the inwall of cavity, be manufactured with top crown metal electrode, top crown metal electrode is incorporated into the side of bonded substrate by the bonding metal layer of the lower surface of fixed pedestal, this apparatus structure compactness, ingenious, change the distance of device under test between silicon elastic film by the heating of 2 groups of ring resistances and the electrostatic attraction of 1 pair of upper bottom crown, can make the press-filming damping coefficient of device to be adjusted reduce or increase 1-2 the order of magnitude, easy to operate, response rapidly, adjustable accuracy is high, it is very good MEMS device damping tunable arrangement.
Brief description of the drawings
Fig. 1 overall structure figure
Fig. 2 damper cap plane structure chart
Fig. 3 damper cap is along the sectional view of A-A hatching
Fig. 4 bonded substrate three-dimensional structure diagram
Fig. 5 bonded substrate plane structure chart
Fig. 6 bonded substrate is along the sectional view of B-B hatching
Fig. 7 bonded substrate is along the sectional view of C-C hatching
Fig. 8 controllable damp device expansion structure figure
Fig. 9 controllable damp device pinned sheepshank composition
Figure 10 bonding metal layer structure chart
Shown in figure, list of numerals is as follows:
1, damper cap, 2, bonded substrate, 3, silicon dioxide layer, 4, silicon nitride layer, 5, bonding metal layer, 6, resistance positive pole, 7, resistance negative pole, 8, resistance positive pole, 9, resistance negative pole, 10, top crown electrode, 11, bottom crown electrode, 12, fixed pedestal, 13, silicon elastic film, 14, cavity, 15, top crown metal level, 16, bonding metal layer, 17, silicon dioxide layer, 18, bottom crown metal level, 19, bottom crown metal level lead-out wire, 20, ring resistance, 21, ring resistance, 22, ring resistance positive outside wire, 23, ring resistance negative outside wire, 24, ring resistance positive outside wire, 25, ring resistance negative outside wire, 26, device to be adjusted, 27, layer-of-substrate silicon, 28, titanium layer, 29, gold layer.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention will be further described:
Figure 1 shows that overall structure figure, taking bonded substrate 2 as carrier, in bonded substrate 2, be deposited with silicon dioxide layer 3, silicon nitride layer 4, bonding metal layer 5, on bonding metal layer 5, bonding has damper cap 1, on the silicon dioxide layer 3 of bonded substrate 2 lower areas, be manufactured with respectively from left to right ring resistance positive pole 6,8, bottom crown electrode 11, silicon nitride layer 4, ring resistance negative pole 9,7, between bottom crown electrode 11 and ring resistance negative pole 9, on silicon nitride layer 4, have top crown electrode 10.
Damper cap 1 and bonded substrate 2 are silicon materials, and thickness is about 400 μ m.The upper surface of damper cap 1 adopts open by design, is convenient to effectively and the assembling of device 26 to be adjusted.
Fig. 2,3 is depicted as the structure chart of damper cap, the huge region processing in center of damper cap 1 has cavity 14, and peripheral regions is housing pedestal 12, and top is silicon elastic film 13, the madial wall of cavity 14 is deposited with top crown metal level 15, and the lower surface of housing pedestal 12 is processed with bonding metal layer 16.
Cavity 14 adopts silicon wet etching to form, and silicon elastic film 13 adopts silicon face heavy doping self-stopping technology etching to form, and top crown metal level 15 and bonding metal layer 16 are identical material structure, and unified deposit forms.
Fig. 4, 5, 6, 7 is the structure chart of bonded substrate, in bonded substrate 2, be manufactured with ring resistance 19, 20, ring resistance 19, 20 rectangular areas of enclosing are deposited with silicon dioxide layer 17, ring resistance 19, 20 peripheral regions is deposited with silicon dioxide layer 3 successively, silicon nitride layer 4, bonding metal layer 5, on the silicon dioxide layer 17 of central area, be deposited with bottom crown metal level 18, on the silicon dioxide layer 3 of bonded substrate 2 lower areas, be manufactured with successively from left to right ring resistance positive pole 6, 8, bottom crown electrode 11, silicon nitride layer 4, ring resistance negative pole 9, 7, between bottom crown electrode 11 and ring resistance negative pole 9, on silicon nitride layer 4, there is top crown electrode 10, ring resistance 21, 22 two ends are respectively by ring resistance positive outside wire 22, 24, ring resistance negative outside wire 23, 25 are incorporated into ring resistance positive pole 6, 8, ring resistance negative pole 7, 9, bottom crown metal level 18 is connected with bottom crown electrode 11 by bottom crown metal level lead-out wire 19.
The planform of ring resistance 19,20 and number can change, increase or reduce according to the difference of designing requirement and working environment.
Bottom crown electrode 11 and ring resistance positive pole 6,8, ring resistance negative pole 9,7 structural materials are identical, but thickness difference, and ring resistance positive pole 6,8, ring resistance negative pole 9,7, for the thick electrode that adds after electroplating, facilitate wire bonds.
Fig. 8,9 is the work structuring figure of press-filming damping tunable arrangement, ring resistance 19,20 energisings in bonded substrate 2 produce heat, when gases are heated, they expand to make encapsulation in cavity 14, volume increases and promotes silicon elastic film 13 and outwards swell, to increase the press-filming damping of device 26 to be adjusted by reducing distance between device 26 to be adjusted and silicon elastic film 13; Top crown electrode 15 energising of the bottom crown electrode 18 in bonded substrate 2 and cavity 14 inwalls produces electrostatic force, and silicon elastic film 13 is caved inward, to reduce the press-filming damping of device 26 to be adjusted by increasing distance between device 26 to be adjusted and silicon elastic film 13.
Figure 10 is the structure chart of bonding metal layer, and its structural material is consistent, and structure sheaf is made up of 2 layers of metallic diaphragm, variable thickness, and on semiconductor silicon material substrate layer 27, the ground floor of growth is titanium layer 28, the second layer is gold layer 29.
The structural material of bonding metal layer 5,16 is identical, and bonding adopts low temperature and pressure mode, makes the gold layer 29 surperficial gold atom on bonding metal layer 5,16 form firm bonding through the other side under the effect of temperature and pressure.
Claims (2)
1. a MEMS inertial sensor structure press-filming damping tunable arrangement, is characterized in that: primary structure is made up of damper cap, bonded substrate, silicon dioxide layer, silicon nitride layer, bonding metal layer, resistance positive pole, resistance negative pole, top crown electrode, bottom crown electrode, fixed pedestal, silicon elastic film, cavity, top crown metal level, bottom crown metal level, top crown metal level lead-out wire, bottom crown metal level lead-out wire, ring resistance, ring resistance positive outside wire, ring resistance negative outside wire, upper doped with huge ring resistance (19 in bonded substrate (2), 20), ring resistance (19, 20) surrounding and the middle section enclosing are deposited with silicon dioxide layer (3), on the silicon dioxide layer (3) of bonded substrate (2) middle section, be manufactured with bottom crown metal level (18), on the silicon dioxide layer (3) of bonded substrate (2) peripheral regions, be deposited with silicon nitride layer (4), on the silicon dioxide layer (3) of the lower area of bonded substrate (2), be manufactured with ring resistance positive pole (6, 8), ring resistance negative pole (7, 9) bottom crown electrode (11), on the silicon nitride layer (4) of peripheral regions, be deposited with bonding metal layer (5), on the silicon dioxide layer (3) of the central area between bottom crown electrode (11) and ring resistance negative pole (9), be deposited with silicon nitride layer (4), on silicon nitride layer (4), be deposited with top crown electrode (10), ring resistance (19, 20) two ends are respectively by ring resistance positive outside wire (22, 24) ring resistance negative outside wire (23, 25) be incorporated into ring resistance positive pole (6, 8), ring resistance negative pole (7, 9), bottom crown metal level (18) is connected with bottom crown electrode (11) by bottom crown metal level lead-out wire (19), the upper airtight bonding of bonding metal layer (5) has damper cap (1), after the inner side processing cavity (14) of damper cap (1), form silicon elastic film (13) and housing pedestal (12), the inwall of cavity (14) is deposited with top crown metal level (15), the lower surface of housing pedestal (12) be deposited with bonding metal layer (16), in cavity (14) after the firm bonding of damper cap (1) and bonded substrate (2), be sealed with dilatancy gas.
2. MEMS inertial sensor structure press-filming damping tunable arrangement according to claim 1, it is characterized in that, described bonding metal layer (5,16), top crown metal level (15), bottom crown metal level (18), structural material is consistent, form by double layer of metal, be provided with titanium layer (28), i.e. Ti layer on silicon substrate 27 tops, be provided with gold layer, i.e. Au layer on titanium layer (28) top.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210071296.7A CN102633227B (en) | 2012-03-16 | 2012-03-16 | Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure |
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| CN201210071296.7A CN102633227B (en) | 2012-03-16 | 2012-03-16 | Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure |
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| CN102633227A CN102633227A (en) | 2012-08-15 |
| CN102633227B true CN102633227B (en) | 2014-07-23 |
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| CN102798387B (en) * | 2012-09-07 | 2016-03-02 | 中北大学 | The huge piezoresistive effect microthrust test of a kind of SOI base |
| CN111757226B (en) * | 2020-06-19 | 2022-01-14 | 歌尔微电子有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
| CN111818434B (en) * | 2020-06-30 | 2022-03-25 | 歌尔微电子有限公司 | MEMS sensor and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457319A (en) * | 2001-02-12 | 2003-11-19 | （株）英特利智微 | Gyroscope and fabrication method thereof |
| CN101334415A (en) * | 2008-07-22 | 2008-12-31 | 上海电力学院 | Microfluid drive and control method for MEMS hermetic cavity electricity-solid-micro- airflow coupling analysis |
| CN101625372A (en) * | 2009-08-19 | 2010-01-13 | 北京大学 | Micro machine differential capacitance accelerometer with symmetrical structure |
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| JP3310154B2 (en) * | 1996-02-23 | 2002-07-29 | 富士電機株式会社 | Semiconductor type acceleration sensor and method of manufacturing the same |
| US20100059911A1 (en) * | 2008-09-05 | 2010-03-11 | Honeywell International Inc. | Adjustable gas damping vibration and shock isolation system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457319A (en) * | 2001-02-12 | 2003-11-19 | （株）英特利智微 | Gyroscope and fabrication method thereof |
| CN101334415A (en) * | 2008-07-22 | 2008-12-31 | 上海电力学院 | Microfluid drive and control method for MEMS hermetic cavity electricity-solid-micro- airflow coupling analysis |
| CN101625372A (en) * | 2009-08-19 | 2010-01-13 | 北京大学 | Micro machine differential capacitance accelerometer with symmetrical structure |
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| Title |
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| JP特开平9-232594A 1997.09.05 |
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Inventor after: Li Mengwei Inventor after: Cui Min Inventor after: Wang Li Inventor after: Liu Jun Inventor after: Wang Zengyue Inventor after: Chu Weihang Inventor after: Du Kang Inventor after: Bai Xiaoxiao Inventor after: Wang Qi Inventor after: Li Xiguang Inventor before: Liu Jun Inventor before: Wang Li Inventor before: Du Kang Inventor before: Li Mengwei Inventor before: Li Xiguang |
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