CN102632669A - Fluoride thin film backplane with light reflection function - Google Patents
Fluoride thin film backplane with light reflection function Download PDFInfo
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- CN102632669A CN102632669A CN2012101449216A CN201210144921A CN102632669A CN 102632669 A CN102632669 A CN 102632669A CN 2012101449216 A CN2012101449216 A CN 2012101449216A CN 201210144921 A CN201210144921 A CN 201210144921A CN 102632669 A CN102632669 A CN 102632669A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a fluoride thin film backplane with light reflection function, belonging to the technical field of a backplane. The backplane is provided with a PU (Polyurethane) pouring layer, a light reflection layer, a PET (polyethylene terephthalate) layer, an adhesive layer and a high-fluoride combined crystal thin film layer from top to bottom in sequence; the PET layer is connected with the PU pouring layer through the light reflection layer; the PET layer is connected with the high-fluoride combined crystal thin film layer by thermal fusion of the adhesive layer; and the fluoride content in the high-fluoride combined crystal thin film layer is 76%. According to the fluoride thin film backplane with the light reflection function, the backplane is composed of the PU pouring layer, the light reflection layer, the PET layer, the adhesive layer and the high-fluoride combined crystal thin film layer; wherein the backplane is strong in adhesive firmness, good in light reflection performance and short in time for preparation technology; in addition, the fire resistance, the weather resistance, the reliability and waterproofness of the backplane are improved; the energy consumption is reduced; the electricity generating efficiency of photovoltaic modules is improved by more than 1%; the fire resistance is improved from HB level to be V2 level; and the peel strength is improved from 40 N/cm to be 60-110 N/cm.
Description
Technical field
The invention belongs to the backplane technology field, be specifically related to the generating of a kind of good flame resistance, photovoltaic module and render a service the plain film backboard of high fluorine with light reflection function.
Background technology
The backboard that uses at present, much all by EVA, PE material 145 ℃ of conditions, obtain through hot pressing 15min cast, encapsulation; Wafer is fragile like this, energy consumption big and production efficiency is low, be prone to fluctuation; Generating efficiency is low, does not have the light reflection function, and be 8 years service life.
Summary of the invention
To the problems referred to above that exist in the prior art, the object of the present invention is to provide a kind of good flame resistance, photovoltaic module generating to render a service the plain film backboard of high fluorine with light reflection function.
Described a kind of plain film backboard of fluorine with light reflection function; It is characterized in that described backboard is equipped with PU pouring layer, reflection layer, pet layer, adhesive linkage and high fluorine synthetic thin layer from top to bottom successively; Described pet layer is connected through reflection layer with the PU pouring layer; Described pet layer is connected through the adhesive linkage heat fusing with high fluorine synthetic thin layer, and fluorine content is 76% in the described high fluorine synthetic thin layer.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that described pet layer thickness is 250-300 μ m.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that the adhesive linkage that described adhesive linkage obtains for the monomer by THV irradiation grafting band function, and its thickness is 3-6 μ m, and the monomer of described band function is acrylic acid or maleic anhydride.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that described pet layer and high fluorine synthetic thin layer are bonding at 100-120 ℃ of heat fusing through adhesive linkage, and the described bonding time is 3-5min.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that the film of described high fluorine synthetic thin layer for being obtained by FEP, PFA and THV synthetic, and its thickness is 28-35 μ m.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that described reflection layer for added the reflecting layer that plate-like titanium dioxide and zinc oxide prepare by polyacrylic acid, and its thickness is 3-6 μ m.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that described PU cast layer thickness is 2-3 μ m.
Described a kind of plain film backboard of fluorine with light reflection function, the percent grafting that it is characterized in that described irradiation grafting is 1.0%-1.5%.
Described a kind of plain film backboard of fluorine with light reflection function is characterized in that described FEP, PFA and THV ratio of weight and number are 100:10-20:10-20.
Described a kind of plain film backboard of fluorine with light reflection function; The addition that it is characterized in that said plate-like titanium dioxide and zinc oxide is the 15-25% of polyacrylic acid, plate-like titanium dioxide and zinc oxide gross mass, and wherein the mass percent of titanium dioxide and zinc oxide is 60%-80%:20%-40%.
Through adopting above-mentioned technology, compared with prior art, beneficial effect of the present invention is following:
1) high fluorine synthetic thin layer of the present invention by ratio of weight and number be 100:10-20:10-20 FEP, PFA and THV altogether synthetic obtain; Its fluorine content reaches 76%, can improve the waterproof rate, good energy-conserving effect; And fire resistance enhancing, weatherability, good reliability, reach service life more than 25 years;
2) adhesive linkage of the present invention is obtained by the monomer of THV irradiation grafting band function; Its percent grafting is 1%-1.5%; Through this adhesive linkage, heat fusing 3-5min can bond together original high fluorine synthetic thin layer and the pet layer that is difficult for connecting closely under 100-120 ℃ of condition, and planarization is good;
3) reflection layer of the present invention is for being added the reflecting layer that high plate-like titanium dioxide of refraction coefficient and zinc oxide pigment prepare by polyacrylic resin; Through in material, being added to inorganic plate-like titanium dioxide and zinc oxide; Reflecting properties is good; Its flexibility is good, bonding excellent in efficiency, and whole film backboard planarization is good;
4) the present invention obtains having the plain film backboard of fluorine of light reflection function through adopting above-mentioned technology, is made up of PU pouring layer, reflection layer, pet layer, adhesive linkage and high fluorine synthetic thin layer; Wherein pet layer and PU pouring layer are bonding by reflection layer, and pet layer is connected by adhesive linkage with high fluorine synthetic thin layer, and its bonding fastness is strong; Light reflective is strong, and preparation technology's time is short, and has improved its anti-flammability, weatherability, reliability and water proofing property; Energy consumption reduces; The photovoltaic module generating efficiency improves more than 1%, and anti-flammability is brought up to the V2 level by the HB level, and peel strength is brought up to 60-110N/cm by 40N/cm.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Among the figure: 1-PU pouring layer, 2-reflection layer, 3-PET layer, 4-adhesive linkage, the high fluorine synthetic of 5-thin layer.
The specific embodiment
Below in conjunction with Figure of description the present invention is done further description:
A kind of plain film backboard of fluorine as shown in Figure 1 with light reflection function; Described backboard is equipped with PU pouring layer 1, reflection layer 2, pet layer 3, adhesive linkage 4 and high fluorine synthetic thin layer 5 from top to bottom successively; Described pet layer 3 is connected through reflection layer 2 with PU pouring layer 1, and described pet layer 3 is connected through adhesive linkage 4 heat fusings with high fluorine synthetic thin layer 5, and fluorine content is 76% in the described high fluorine synthetic thin layer 5; Described PU pouring layer 1 thickness is 2-3 μ m; PU pouring layer 1 of the present invention is fast with bonding times such as battery sheet, anters, and for 2-3min gets final product, shrinkage factor is little.
The adhesive linkage that described adhesive linkage 4 obtains for the monomer by THV irradiation grafting band function; Its thickness is 3-6 μ m; The percent grafting of irradiation grafting is 1.0%-1.5%, and the monomer of described band function is acrylic acid or maleic anhydride, through this adhesive linkage 4; Heat fusing 3-5min makes the original high fluorine synthetic thin layer 5 that is difficult for connecting can bond together closely with pet layer 5 under 100-120 ℃ of condition, and planarization is good.
Described high fluorine synthetic thin layer 5 is obtained by FEP, PFA and the THV synthetic of the 100:10-20:10-20 that ratio of weight and number is; Its thickness is 28-35 μ m; In the implementation process of the present invention; The ratio of weight and number of FEP, PFA and THV is following several kinds of 100:10:10,100:10:20,100:20:10,100:20:20,100:15:15 or other other ratios in the 100:10-20:10-20 scope in the used high fluorine synthetic thin layer 5, all can obtain same effect.
Described reflection layer 2 is for being added the reflecting layer that plate-like titanium dioxide and zinc oxide prepare by polyacrylic acid; Its thickness is 3-6 μ m; The addition of said plate-like titanium dioxide and zinc oxide is the 15-25% of polyacrylic acid, plate-like titanium dioxide and zinc oxide gross mass, and wherein the mass percent of titanium dioxide and zinc oxide is 60%-80%:20%-40%.
The present invention passes through to adopt above-mentioned technology, the plain film backboard of fluorine that is suitable for pouring into a mould encapsulation that obtains, and its fire resistance is good, brings up to V2 level (with the UL94 standard) by the HB level; Peel strength improves, and brings up to 60-110N/cm by 40N/cm, and cohesives such as PU pouring layer and battery sheet, anter are good, and the time is fast; Be 2-3min, shrinkage factor is little, and weatherability and reliability improve; The photovoltaic module generating efficiency improves more than 1%, 25 years service life, thus improved economic benefit.
Claims (10)
1. plain film backboard of the fluorine with light reflection function; It is characterized in that described backboard is equipped with PU pouring layer (1), reflection layer (2), pet layer (3), adhesive linkage (4) and high fluorine synthetic thin layer (5) from top to bottom successively; Described pet layer (3) is connected through reflection layer (2) with PU pouring layer (1); Described pet layer (3) is connected through adhesive linkage (4) heat fusing with high fluorine synthetic thin layer (5), and fluorine content is 76% in the described high fluorine synthetic thin layer (5).
2. a kind of plain film backboard of fluorine with light reflection function according to claim 1 is characterized in that described pet layer (3) thickness is 250-300 μ m.
3. a kind of plain film backboard of fluorine according to claim 1 with light reflection function; It is characterized in that the adhesive linkage that described adhesive linkage (4) obtains for the monomer by THV irradiation grafting band function; Its thickness is 3-6 μ m, and the monomer of described band function is acrylic acid or maleic anhydride.
4. a kind of plain film backboard of fluorine according to claim 1 with light reflection function; It is characterized in that described pet layer (3) and high fluorine synthetic thin layer (5) are bonding at 100-120 ℃ of heat fusing through adhesive linkage (4), the described bonding time is 3-5min.
5. a kind of plain film backboard of fluorine with light reflection function according to claim 1 is characterized in that the film of described high fluorine synthetic thin layer (5) for being obtained by FEP, PFA and THV synthetic, and its thickness is 28-35 μ m.
6. a kind of plain film backboard of fluorine with light reflection function according to claim 1 is characterized in that described reflection layer (2) for added the reflecting layer that plate-like titanium dioxide and zinc oxide prepare by polyacrylic acid, and its thickness is 3-6 μ m.
7. a kind of plain film backboard of fluorine with light reflection function according to claim 1 is characterized in that described PU pouring layer (1) thickness is 2-3 μ m.
8. a kind of plain film backboard of fluorine with light reflection function according to claim 3, the percent grafting that it is characterized in that described irradiation grafting is 1.0%-1.5%.
9. a kind of plain film backboard of fluorine with light reflection function according to claim 5 is characterized in that described FEP, PFA and THV ratio of weight and number are 100:10-20:10-20.
10. a kind of plain film backboard of fluorine according to claim 6 with light reflection function; The addition that it is characterized in that said plate-like titanium dioxide and zinc oxide is the 15-25% of polyacrylic acid, plate-like titanium dioxide and zinc oxide gross mass, and wherein the mass percent of titanium dioxide and zinc oxide is 60%-80%:20%-40%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210144921.6A CN102632669B (en) | 2012-05-11 | 2012-05-11 | Fluoride thin film backplane with light reflection function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210144921.6A CN102632669B (en) | 2012-05-11 | 2012-05-11 | Fluoride thin film backplane with light reflection function |
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| CN102632669A true CN102632669A (en) | 2012-08-15 |
| CN102632669B CN102632669B (en) | 2014-10-08 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102945879A (en) * | 2012-12-10 | 2013-02-27 | 江苏金瑞晨新材料有限公司 | High-transparency light photovoltaic module and preparation method thereof |
| CN105977347A (en) * | 2016-07-27 | 2016-09-28 | 无锡中洁能源技术有限公司 | High-reflective-coating solar backboard manufacturing process |
| CN106024948A (en) * | 2016-07-26 | 2016-10-12 | 无锡中洁能源技术有限公司 | High-reflectivity solar backboard |
| CN106129164A (en) * | 2016-07-26 | 2016-11-16 | 无锡中洁能源技术有限公司 | A kind of high reflectance solar energy backboard |
| CN106206851A (en) * | 2016-08-27 | 2016-12-07 | 无锡中洁能源技术有限公司 | A kind of production technology of application type solar energy backboard |
| CN106218155A (en) * | 2016-07-25 | 2016-12-14 | 无锡中洁能源技术有限公司 | A kind of solar energy backboard with high barrier |
| CN106328762A (en) * | 2016-08-27 | 2017-01-11 | 无锡中洁能源技术有限公司 | Process for producing self-cooling solar back plate |
| CN110466236A (en) * | 2018-05-10 | 2019-11-19 | 无锡莱恩科技有限公司 | A kind of solar cell backboard manufacturing method and manufacture system |
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| US20090274912A1 (en) * | 2006-04-21 | 2009-11-05 | Arkema France | Multilayer structure having a grafted polyvinylidene fluoride blend layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945879A (en) * | 2012-12-10 | 2013-02-27 | 江苏金瑞晨新材料有限公司 | High-transparency light photovoltaic module and preparation method thereof |
| CN102945879B (en) * | 2012-12-10 | 2016-05-04 | 江苏金瑞晨新材料有限公司 | A kind of high printing opacity lighting photovoltaic module and preparation method thereof |
| CN106218155A (en) * | 2016-07-25 | 2016-12-14 | 无锡中洁能源技术有限公司 | A kind of solar energy backboard with high barrier |
| CN106024948A (en) * | 2016-07-26 | 2016-10-12 | 无锡中洁能源技术有限公司 | High-reflectivity solar backboard |
| CN106129164A (en) * | 2016-07-26 | 2016-11-16 | 无锡中洁能源技术有限公司 | A kind of high reflectance solar energy backboard |
| CN105977347A (en) * | 2016-07-27 | 2016-09-28 | 无锡中洁能源技术有限公司 | High-reflective-coating solar backboard manufacturing process |
| CN106206851A (en) * | 2016-08-27 | 2016-12-07 | 无锡中洁能源技术有限公司 | A kind of production technology of application type solar energy backboard |
| CN106328762A (en) * | 2016-08-27 | 2017-01-11 | 无锡中洁能源技术有限公司 | Process for producing self-cooling solar back plate |
| CN110466236A (en) * | 2018-05-10 | 2019-11-19 | 无锡莱恩科技有限公司 | A kind of solar cell backboard manufacturing method and manufacture system |
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| Publication number | Publication date |
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| CN102632669B (en) | 2014-10-08 |
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