CN102629581A - TFT array substrate, liquid crystal display panel method for manufacturing the array substrate - Google Patents

TFT array substrate, liquid crystal display panel method for manufacturing the array substrate Download PDF

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CN102629581A
CN102629581A CN2011103050259A CN201110305025A CN102629581A CN 102629581 A CN102629581 A CN 102629581A CN 2011103050259 A CN2011103050259 A CN 2011103050259A CN 201110305025 A CN201110305025 A CN 201110305025A CN 102629581 A CN102629581 A CN 102629581A
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China
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array substrate
active layer
photoresist
layer
tft array
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CN2011103050259A
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Chinese (zh)
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王世君
薛艳娜
陈小川
黎蔚
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北京京东方光电科技有限公司
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Priority to CN2011103050259A priority Critical patent/CN102629581A/en
Publication of CN102629581A publication Critical patent/CN102629581A/en

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Abstract

The invention, which relates to the liquid crystal display panel manufacturing field, discloses a thin film transistor (TFT) array substrate, a liquid crystal display panel method for manufacturing the array substrate, so that toppling of a space can be prevented and a display effect of a liquid crystal panel is improved. The method for manufacturing a TFT array substrate comprises the following steps that: an active layer is coated on a substrate provided with a gate line, a gate electrode and a gate insulating layer; a data metal layer is coated on the active layer and a data line, a source electrode, a drain electrode, a semiconductor active layer and a groove on the semiconductor active layer above the gate line are obtained by processing according to a composition process; a protective layer is formed on the data line, the source electrode and the drain electrode; and a pixel electrode layer connected with the drain electrode is formed on the protective layer. According to the invention, the TFT array substrate, the liquid crystal display panel the method for manufacturing the array substrate are applied to manufacturing of the liquid crystal display panel.

Description

TFT阵列基板、液晶显示面板及阵列基板制造方法 The TFT array substrate, the liquid crystal display panel and a method of manufacturing an array substrate

技术领域 FIELD

[0001] 本发明涉及液晶显示面板制造领域,尤其涉及一种TFT阵列基板、液晶显示面板及阵列基板制造方法。 [0001] The present invention relates to the field of manufacturing liquid crystal display panel, particularly to a method of manufacturing a panel array and a TFT array substrate for substrate, the liquid crystal display.

背景技术 Background technique

[0002] 目前TFT-LCD(Thin Film Transistor-Liquid Crystal Display,薄膜场效应晶体管液晶显示器)的液晶显示面板,是由对盒成型的上下两块玻璃基板以及在其中间填充的液晶层构成。 [0002] It TFT-LCD (Thin Film Transistor-Liquid Crystal Display, thin film transistor liquid crystal display) of the liquid crystal display panel is constituted by two upper and lower glass substrates of the cassette and in which the liquid crystal forming interlayer filling.

[0003] 为了控制盒厚,一般采用隔垫物进行支撑,其中,隔垫物主要放置在TFT阵列基板的非透光区域中。 [0003] In order to control the cell thickness, the general supporting spacers, wherein the spacers are placed mainly in the non-transparent region of the TFT array substrate.

[0004] 在隔垫物放置后,当液晶面板受到外力挤压时,位于TFT阵列基板上的隔垫物容易倾倒,倾倒后容易触碰到TFT阵列基板上的取向膜或掺入到液晶层中,进而影响了液晶面板的显示效果。 [0004] After the spacer is placed, when the liquid crystal panel is pressed by an external force, is located on the TFT array substrate easily falls spacers, after pour easily touch the alignment film on the TFT array substrate or incorporated into the liquid crystal layer in turn affect the display effect of a liquid crystal panel.

发明内容 SUMMARY

[0005] 本发明提供一种TFT阵列基板、液晶显示面板及阵列基板制造方法,能够防止隔垫物倾倒,提高了液晶面板的显示效果。 [0005] The present invention provides a TFT array substrate, an array substrate and a method of manufacturing a liquid crystal display panel, the spacer can be prevented poured, improving the display effect of a liquid crystal panel.

[0006] 为达到上述目的,本发明采用如下技术方案: [0006] To achieve the above object, the present invention adopts the following technical solution:

[0007] 一种TFT阵列基板的制造方法,包括: [0007] A method of manufacturing a TFT array substrate, comprising:

[0008] 在形成有栅线、栅极、栅绝缘层的基板上涂布有源层; [0008] In forming the gate line, the gate, the active layer coated on a substrate a gate insulating layer;

[0009] 在所述有源层上涂布数据金属层,通过构图工艺处理得到数据线、源极、漏极、半导体有源层和位于所述栅线上方的半导体有源层上的凹槽; Grooves on the semiconductor active layer [0009] data in the coating metal layer on the active layer, the data lines obtained by a patterning process, the source electrode, the drain electrode, the semiconductor active layer, and the gate line side ;

[0010] 在所述数据线、源极、漏极上形成保护层; [0010] In the data line, source electrode, the drain electrode is formed on the protective layer;

[0011] 在所述保护层上形成与所述漏极连接的像素电极层。 [0011] The pixel electrode layer is formed and connected to the drain electrode on the protective layer.

[0012] 一种TFT阵列基板,包括:基板,和位于所述基板上的栅线、栅极、栅绝缘层、半导体有源层、数据线、源极、漏极、保护层,以及位于所述保护层上方的与所述漏极连接的像素电极层,所述栅线上方的半导体有源层上设有凹槽。 [0012] A TFT array substrate, comprising: a substrate, and the gate line located on the substrate, a gate electrode, a gate insulating layer, a semiconductor active layer, a data line, a source, a drain, a protective layer, and is located in the said pixel electrode connected to the drain electrode layer over the protective layer, the semiconductor active layer provided with a groove on the side of the gate line.

[0013] 一种液晶显示面板,包括对合成形的TFT阵列基板和彩膜基板,所述TFT阵列基板为上述的TFT阵列基板,其中,所述TFT阵列基板和所述彩膜基板之间的隔垫物位于所述TFT阵列基板的半导体有源层形成的凹槽内。 [0013] A liquid crystal display panel comprising between a synthetic form of a TFT array substrate and the color filter substrate, a TFT array substrate of the TFT array substrate as described above, wherein the TFT array substrate and the color filter substrate the semiconductor active layer within the groove is located in the spacer formed on the TFT array substrate.

[0014] 本发明提供的TFT阵列基板、液晶显示面板和TFT阵列基板制造方法,利用形成数据线、源极、漏极的构图工艺,同时在栅线上方的半导体有源层上形成凹槽,以便将TFT阵列基板和彩膜基板之间的隔垫物放置于该凹槽内,达到防止隔垫物倾倒的目的,提高液晶面板显示效果。 [0014] The present invention provides a TFT array substrate, the liquid crystal display panel and a method of manufacturing the TFT array substrate by forming a data line, a source, a drain of the patterning process, while forming a recess in the semiconductor active layer on the gate line side, so as spacers between the TFT array substrate and the color filter substrate is placed in the recess, the purpose of preventing septum was poured, the liquid crystal panel to improve the display effect.

附图说明[0015] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。 BRIEF DESCRIPTION [0015] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, the accompanying drawings for describing the embodiments or the prior art described in the introduction required simply Apparently, the following the drawings are merely described some embodiments of the present invention, those of ordinary skill in the art is concerned, without creative efforts, we can derive from these drawings other drawings.

[0016] 图I为本发明实施例一提供的TFT阵列基板的一个像素区域结构示意图;[0017] 图2为图I沿AA向的剖视结构示意图; [0016] Figure I a schematic view of a pixel region of the TFT array substrate structure of the invention according to a first embodiment of the present; [0017] FIG. 2 is a schematic sectional structure taken along line AA of Figure I;

[0018] 图3为本发明实施例二提供的TFT阵列基板的制造方法流程示意图; [0018] FIG. 3 is a schematic flowchart of a method of manufacturing the TFT array substrate according to a second embodiment of the invention;

[0019] 图4为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S301后的TFT阵列基板结构示意图; [0019] FIG. 4 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention, the step S301 is completed;

[0020] 图5为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S302后的TFT阵列基板结构示意图; [0020] FIG. 5 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention, the step S302 is completed;

[0021] 图6为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S303后的TFT阵列基板结构示意图; [0021] FIG. 6 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention is completed step S303;

[0022] 图7为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S304后的TFT阵列基板结构示意图; [0022] FIG. 7 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention is completed step S304;

[0023] 图8为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S305后的TFT阵列基板结构示意图; [0023] Figure 8 a schematic view of the TFT array substrate structure after S305 TFT array substrate manufacturing method according to a second embodiment of the present invention, the step is completed;

[0024] 图9为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S306后的TFT阵列基板结构示意图; [0024] FIG. 9 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention is completed step S306;

[0025] 图10为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S307后的TFT阵列基板结构示意图; [0025] FIG 10 a schematic view of the TFT array substrate structure after S307 TFT array substrate manufacturing method according to a second embodiment of the present invention, the step is completed;

[0026] 图11为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S308后的TFT阵列基板结构示意图; [0026] FIG 11 a schematic view of the TFT array substrate structure after S308 TFT array substrate manufacturing method according to a second embodiment of the present invention, the step is completed;

[0027] 图12为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S309后的TFT阵列基板结构示意图; [0027] FIG. 12 is a schematic structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention is completed step S309;

[0028] 图13为本发明实施例二提供的TFT阵列基板的制造方法中完成步骤S310后的TFT阵列基板结构示意图; [0028] FIG 13 a schematic view of the structure of the TFT array substrate manufacturing method of the TFT array substrate according to a second embodiment of the present invention is completed step S310;

[0029] 图14为本发明实施例三提供的液晶显示面板的结构示意图。 [0029] FIG 14 a schematic view of a liquid crystal structure according to a third embodiment of a display panel of the present invention.

具体实施方式 Detailed ways

[0030] 下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。 [0030] below in conjunction with the present invention in the accompanying drawings, technical solutions of embodiments of the present invention are clearly and completely described, obviously, the described embodiments are merely part of embodiments of the present invention, but not all embodiments example. 基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments of ordinary skill in the art without any creative effort shall fall within the scope of the present invention.

[0031] 实施例一 [0031] Example a

[0032] 本发明实施例提供的TFT阵列基板,如图I、图2所示,图I为TFT阵列基板的一个像素区域的结构示意图俯视图,图2为图I所示的TFT阵列基板沿AA向的剖视图。 [0032] The TFT array substrate according to an embodiment of the present invention, FIG. I, Figure 2, Figure I is a structure of one pixel region of the TFT array substrate is a schematic plan view, FIG. 2 is a TFT array substrate shown in Figure I taken along AA to the cross-sectional view.

[0033] 该TFT阵列基板包括:基板10 ;形成于基板10上的栅线11和栅极12 ;形成于栅线11和栅极12上的栅绝缘层20 ;形成于栅绝缘层20上方的半导体有源层21,形成于半导体有源层21上方的源极13、漏极14、数据线15 ;位于栅线11上方的半导体有源层21上具有凹槽18 ;此外,在数据线15、源极13、漏极14上方还形成有保护层19 ;在由数据线15和栅线11交叉围成的区域中形成有像素电极16。 [0033] The TFT array substrate comprising: a substrate 10; formed on the gate line 11 on the substrate 10 and the gate 12; 11 is formed on the gate line and the gate 12 of the gate insulating layer 20; formed on the gate insulating layer 20 over the the semiconductor active layer 21 is formed over the semiconductor active layer 21 source electrode 13, drain electrode 14, the data line 15; 21 has a groove 18 on the semiconductor active layer 11 positioned above the gate lines; in addition, the data line 15 , source electrode 13, drain electrode 14 is also formed above the protective layer 19; formed surrounded by the data line 15 and gate line 11 crossing at the pixel electrode 16 region. 该像素电极16可以通过过孔17与漏极14相连,栅极12、源极13、漏极14、半导体有源层21构成TFT。 The pixel electrode 16 may be connected through a via 14 and the drain electrode 17, gate electrode 12, source electrode 13, drain electrode 14, the semiconductor active layer 21 constituting the TFT.

[0034] 本发明实施例提供的TFT阵列基板,位于栅线11上方的半导体有源层21上具有凹槽结构,可以在后续液晶显示面板制造过程中放入隔垫物,在保持液晶面板盒厚的同时,还能够防止了隔垫物倾倒,保证了液晶面板的显示效果。 [0034] TFT array substrate according to an embodiment of the present invention, the semiconductor active layer 11 located above the gate line 21 having a groove structure, a display panel manufacturing process can be placed in a subsequent spacers of the liquid crystal, the liquid crystal panel holding cassette thick, it is also possible to prevent the spacer was poured, the display performance of the liquid crystal panel.

[0035] 实施例二 [0035] Second Embodiment

[0036] 下面通过附图3〜图13所示,对本发明实施例提供的TFT阵列基板的制造方法进行说明。 [0036] Next, as shown by figures 3 ~ 13, a method of manufacturing the TFT array substrate according to the present invention is provided will be described. 在本实施例中图4〜图13均为与图2相同的截面位置。 FIG April to the same embodiment in FIG. 13 and FIG. 2 are cross-sectional position in the present embodiment. 如图3所示,方法步骤包括: As shown in FIG 3, the method comprising the step of:

[0037] S301、在玻璃基板上沉积金属层,通过构图工艺处理得到栅线11和栅极12。 [0037] S301, a metal layer is deposited on a glass substrate, to obtain the gate line 11 and the gate 12 by a patterning process.

[0038] 如图4所示,可以使用磁控溅射方法,在玻璃基板10上制备一层厚度在1000人至7000人的金属薄膜层。 [0038] As shown in FIG 4, using a magnetron sputtering method, to a thickness of 10 on a glass substrate prepared in the 7,000 to 1,000 a metal thin film layer. 金属材料通常可以采用钥、铝、铝镍合金、钥钨合金、铬、或铜等金属,也可以使用上述几种材料薄膜的组合结构。 Key may be commonly used metal material, aluminum, aluminum-nickel alloys, keyhole tungsten alloy, chromium, copper, or the like, may be used in combination with the above-described structure of several thin film of material. 然后,用掩模版通过曝光、显影、刻蚀、剥离等第一次构图工艺处理,在玻璃基板10的一定区域上形成多条横向的栅线11和与栅线相连的栅极12。 Then, a plurality of transverse gate line 11 and the gate 12 is connected to the gate line in a certain area of ​​the glass substrate 10 with the mask by the exposure, development, etching, peeling, step one patterning process.

[0039] S302、在栅线11和栅极12上形成栅绝缘层20。 [0039] S302, the gate insulating layer 20 is formed on the gate line 11 and the gate 12.

[0040] 如图5所不,可以利用化学汽相沉积法(Plasma EnhancedChemical VaporDeposition, PECVD)在栅线11、栅极I2上沉积厚度为1000人至6000人的栅极绝缘层沈,栅绝缘层20的材料通常是氮化硅,也可以使用氧化硅和氮氧化硅等。 [0040] FIG. 5 is not possible using chemical vapor deposition method (Plasma EnhancedChemical VaporDeposition, PECVD) in the gate line 11, the gate electrode 1000 is I2 is deposited to a thickness of the gate insulating layer sink 6000, a gate insulating layer material 20 is typically silicon nitride, and silicon oxide may be silicon oxynitride.

[0041] S303、在栅绝缘层20上涂布有源层41 (在本实施例中,将首先涂覆在整个基板上的称为有源层,将该有源层经刻蚀后构成TFT的部分称为半导体有源层)。 [0041] S303, the active layer is coated on the gate insulating layer 2041 (in the present embodiment, the first called active coating layer on the entire substrate, the active layer is etched after the TFT the part is called the semiconductor active layer).

[0042] 如图6所示,可以通过溅射方法连续沉积厚度为50 ~ 1000 A金属氧化物薄膜作为有源层41。 [0042] As shown in FIG. 6, it may be continuously deposited with a thickness of 50 ~ 1000 A metal oxide thin film as an active layer 41 by a sputtering method.

[0043] S304、在有源层41上涂布数据金属层42。 [0043] S304, the active layer 41 is coated on the data metal layer 42.

[0044] 如图7所示,可以采用与形成栅线11、栅极12相同的工艺在有源层41上涂布数据金属层42。 [0044] As shown in FIG 7, 11 may be employed, the same process as a gate electrode 12 is coated on the data metal layer 42 and the gate line is formed in the active layer 41.

[0045] S305、如图8所示,在数据金属层42上涂布光刻胶45。 [0045] S305, as shown in FIG 42 on the data metal layer 458 coated with a photoresist. [0046] S306、如图9所示,利用灰色调掩摸板或半透式掩摸板50对光刻胶45进行曝光,显影后形成光刻胶完全保留区域451、光刻胶半保留区域452和光刻胶完全去除区域。 [0046] S306, FIG. 9, the gray-tone mask or a transflective formwork formwork 50 pairs photoresist mask 45 is exposed photoresist completely-retained region 451 is formed after development, photoresist half-retained region 452 and photoresist completely removed region. 其中,在像素单元中,光刻胶完全保留区域451对应数据线15、源极13、漏极14,光刻胶半保留区域452对应栅线上方的除凹槽18之外的半导体有源层,光刻胶完全去除区域对应像素单元中的光刻胶完全保留区域和光刻胶半保留区域之外的区域,如像素电极、栅线以及半导体有源层位于栅线11上方的凹槽18。 Wherein, in the pixel unit, the photoresist completely-retained region 451 corresponding to data line 15, source electrode 13, drain electrode 14, the semiconductor active layer than the photoresist half-retained region 452 corresponding to the gate line side of the other recess 18 the photoresist is completely removed in the region corresponding to the pixel cells completely retained photoresist and photoresist region other than the semi-retained region, such as the pixel electrode, the gate line and the semiconductor active layer 11 above the groove 18 of the gate line .

[0047] S307、利用刻蚀工艺去除掉光刻胶完全去除区域的数据金属层42和有源层41,得到如图10所示的结构。 [0047] S307, the photoresist is removed using an etching process to completely remove the data metal layer 42 and the active layer region 41, resulting in the structure shown in Figure 10.

[0048] S308、利用等离子体灰化工艺去除掉光刻胶半保留区域452的光刻胶,得到如图11所示的结构,露出半导体有源层21上方的数据金属层42(在本实施例中,将首先涂覆在整个基板上的称为有源层,将该有源层经刻蚀后构成TFT的部分称为半导体有源层)。 [0048] S308, a plasma ashing process to remove the photoresist in the photoresist half-retained region 452, resulting in the structure shown in Figure 11, the semiconductor active layer 21 is exposed above the metal layer 42 of the data (in the present embodiment embodiment, the first coated on the entire substrate is referred to as active layer, this portion of the active layer of the TFT is referred etched semiconductor active layer).

[0049] S309、利用刻蚀工艺去除掉光刻胶半保留区域451的数据金属层42,得到如图12所示的结构。 [0049] S309, photoresist is removed with an etching process retained region half the data metal layer 451 is 42, the structure shown in FIG. 12.

[0050] S310、剥离掉光刻胶完全保留区域451的光刻胶45,如图13所示的结构,得到数据线15、源极13、漏极14及半导体有源层21。 [0050] S310, the photoresist is peeled off completely-retained region 451 of the photoresist 45, the structure shown in Figure 13, to obtain data line 15, source electrode 13, drain electrode 14 and the semiconductor active layer 21. 在图13中,还形成有位于栅线11上方的半导体有源层21上的凹槽18。 In Figure 13, the semiconductor active layer is further formed over the gate line 11 is located in a groove 18 on 21.

[0051] S311、在数据线15、源极13、漏极14上形成保护层19,得到如图2所示的TFT阵列 [0051] S311, the data line 15, source electrode 13, the protective layer 19 is formed on the drain electrode 14, to obtain a TFT array 2 shown in FIG.

基板结构。 The substrate structure.

[0052] S312、在保护层19上形成与漏极14连接的像素电极层16。 [0052] S312, the pixel electrode 16 is connected to the drain layer 14 on the protective layer 19.

[0053] 具体的漏极14可以通过过孔与像素电极层16电连接。 [0053] Specifically the drain hole 14 may be electrically connected to the pixel electrode layer 16 through the via.

[0054] 本发明实施例提供的TFT阵列基板制造方法,利用形成数据线、源极、漏极的构图工艺,同时在栅线上方的半导体有源层上形成凹槽,以便将TFT阵列基板和彩膜基板之间的隔垫物放置于该凹槽内,防止隔垫物倾倒,提高液晶面板显示效果的目的。 [0054] The method of manufacturing a TFT array substrate according to an embodiment of the present invention, by using a data line, a source, a drain of the patterning process, while forming a recess in the semiconductor active layer on the gate line side, so that the TFT array substrate and spacers between the color filter substrate is placed in the recess, the purpose of preventing the spacer was poured, the liquid crystal panel to improve the display effect.

[0055] 另外,由于半导体有源层上的凹槽是在制造源、漏极的同时由一次构图工艺所得,因此没有增加额外的制造成本及工序。 [0055] Further, since the groove on the semiconductor active layer in the manufacturing source, the drain, while the resulting primary patterning process, so no additional manufacturing steps and costs.

[0056] 实施例三 [0056] Example three

[0057] 本发明实施例提供的液晶显示面板,如图14所示,包括对合成型的TFT阵列基板80和彩膜基板70,且该TFT阵列基板80为上述实施例二中提供的TFT阵列基板,其中,该TFT阵列基板80和彩膜基板70之间的隔垫物60位于TFT阵列基板80的半导体有源层41形成的凹槽18内。 [0057] an embodiment of the liquid crystal display panel of the present invention, a TFT array, the synthetic including a TFT array substrate 80 and the color filter substrate 70 and the TFT array substrate 80 is two in the above Example 14 provided in FIG. substrate, wherein the TFT array substrate 80 and the spacer 60 between the color filter substrate 70 is located within the recess 18 of the semiconductor active layer 80 of the TFT array substrate 41 is formed.

[0058] 本发明实施例提供的液晶显示面板,TFT阵列基板与彩膜基板之间的隔垫物放置于栅线上方的半导体有源层形成的凹槽内,在液晶面板受到外力挤压时,可以防止隔垫物倾倒触碰取向膜,从而提高了液晶面板的显示效果。 When the [0058] LCD according to an embodiment of the present invention, the spacer between the display panel, the TFT array substrate and the color filter substrate are placed in the grooves of the gate line side of the active semiconductor layer is formed, the liquid crystal panel pressed by an external force , can be prevented from touching the spacer poured alignment film, thereby improving the display effect of a liquid crystal panel.

[0059] 本发明实施例提供的液晶显示面板,TFT阵列基板与彩膜基板之间的隔垫物放置于栅线上方的所述半导体有源层形成的凹槽内,在液晶面板受到外力挤压时,防止隔垫物倾倒触碰取向膜,从而提高了液晶面板的显示效果。 [0059] an embodiment of the liquid crystal display panel of the present invention, the spacer between the TFT array substrate and the color filter substrate are placed in the grooves of the gate line side of the semiconductor active layer is formed by an external force to squeeze the liquid crystal panel when pressure against the touch spacer poured alignment film, thereby improving the display effect of a liquid crystal panel. [0060] 以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。 [0060] The above are only specific embodiments of the present invention, but the scope of the present invention is not limited thereto, any skilled in the art in the art within the technical scope of the present invention is disclosed, variations may readily occur or Alternatively, it shall fall within the protection scope of the present invention. 因此,本发明的保护范围应以所述权利要求的保护范围为准。 Accordingly, the scope of the present invention should be defined by the scope of the claims.

Claims (4)

1. 一种TFT阵列基板的制造方法,其特征在于,包括: 在形成有栅线、栅极、栅绝缘层的基板上涂布有源层; 在所述有源层上涂布数据金属层,通过构图工艺处理得到数据线、源极、漏极、半导体有源层和位于所述栅线上方的半导体有源层上的凹槽; 在所述数据线、源极、漏极上形成保护层; 在所述保护层上形成与所述漏极连接的像素电极层。 1. A method of manufacturing a TFT array substrate, characterized by comprising: an active layer formed on the coated substrate gate line, the gate, the gate insulating layer; applying data metal layer on the active layer , obtained by the patterning process data line, a source, a drain, a semiconductor active layer, and the groove on the semiconductor active layer side of the gate line; the data line, source electrode, the drain electrode is formed on the protective layer; forming the pixel electrode connected to the drain layer on the protective layer.
2.根据权利要求I所述的方法,其特征在于,在所述有源层上涂布数据金属层,通过构图工艺处理得到数据线、源极、漏极、半导体有源层和位于所述栅线上方的半导体有源层上的凹槽包括: 在所述有源层上涂布数据金属层; 在所述数据金属层上涂布光刻胶; 利用灰色调掩摸板或半透式掩摸板对所述光刻胶进行曝光,显影后形成光刻胶完全保留区域、光刻胶半保留区域和光刻胶完全去除区域;其中,在像素单元中,所述光刻胶完全保留区域对应数据线、源极、漏极,所述光刻胶半保留区域对应除凹槽区域之外的半导体有源层,所述光刻胶完全去除区域对应所述像素单元中的光刻胶完全保留区域和所述光刻胶半保留区域之外的区域; 利用刻蚀工艺去除掉所述光刻胶完全去除区域的数据金属层和有源层; 利用等离子体灰化工艺去除掉所述光刻胶半保 2. The method according to claim I, characterized in that the data in the coating metal layer on the active layer, the data lines obtained by a patterning process, the source electrode, the drain electrode, the semiconductor active layer, and grooves on the semiconductor active layer side of the gate line comprises: applying a data metal layer on the active layer; applying a photoresist on the data metal layer; using a gray-tone mask or a transflective formwork formwork mask exposing the photoresist, the photoresist completely-retained region is formed after development, photoresist half-retained regions completely removed and photoresist region; wherein in the pixel unit, the photoresist completely-retained area corresponding data line, a source, a drain, a photoresist half-retained region corresponding to the semiconductor active layer region other than the groove, the photoresist is completely removed in the region corresponding to the pixel unit photoresist completely retained and the region other than the photoresist half-retained region; using an etch process to remove the photoresist is completely removed data metal layer and the active layer region; using a plasma ashing process to remove the photoresist half-Paul 区域的光刻胶; 利用刻蚀工艺去除掉所述光刻胶半保留区域的数据金属层; 剥离掉所述光刻胶完全保留区域的光刻胶。 The regions of the photoresist; using an etch process to remove the photoresist semi data metal layer of a reserved area; peeling off the photoresist completely-retained region photoresist.
3. —种TFT阵列基板,包括:基板,和位于所述基板上的栅线、栅极、栅绝缘层、半导体有源层、数据线、源极、漏极、保护层,以及位于所述保护层上方的与所述漏极连接的像素电极层,其特征在于,所述栅线上方的半导体有源层上设有凹槽。 3 - Species TFT array substrate, comprising: a substrate, and the gate line located on the substrate, a gate electrode, a gate insulating layer, a semiconductor active layer, a data line, a source, a drain, a protective layer, and located a pixel electrode connected to the drain electrode layer over the protective layer, wherein the semiconductor active layer provided with a groove on the side of the gate line.
4. 一种液晶显示面板,包括对合成型的TFT阵列基板和彩膜基板,其特征在于,所述TFT阵列基板为权利要求3所述的TFT阵列基板,其中,所述TFT阵列基板和所述彩膜基板之间的隔垫物位于所述TFT阵列基板的半导体有源层形成的凹槽内。 A liquid crystal display panel, comprising synthetic TFT array substrate and the color filter substrate, wherein the TFT array substrate of the TFT array substrate as claimed in claim 3, wherein the TFT array substrate and the the semiconductor active layer within the recess between the spacer located in said color filter substrate of the TFT array substrate is formed.
CN2011103050259A 2011-10-10 2011-10-10 TFT array substrate, liquid crystal display panel method for manufacturing the array substrate CN102629581A (en)

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