CN102623512B - Fast soft recovery diode and method for producing same - Google Patents
Fast soft recovery diode and method for producing same Download PDFInfo
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- CN102623512B CN102623512B CN201110456082.7A CN201110456082A CN102623512B CN 102623512 B CN102623512 B CN 102623512B CN 201110456082 A CN201110456082 A CN 201110456082A CN 102623512 B CN102623512 B CN 102623512B
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Abstract
A fast soft recovery diode comprises at least two fast diodes which are connected in parallel. The fast soft recovery diode is characterized in that the reverse recovery time of the fast diodes in the parallel combination is trra= (0.1-0.9) trrb, wherein the trra refers to the reverse recovery time of one large fast diode, and the trrb refers to the reverse recovery time of optional one of the rest fast diodes. A method for producing the fast soft recovery diode is characterized in that at least two fast diodes conforming to the reverse recovery time trra= (0.1-0.9) trrb are parallelly combined to form the fast soft recovery diode. The fast soft recovery diode is simple in processing and low in cost, and has a soft recovery property.
Description
Technical field
The present invention relates to a kind of quick soft-recovery diode and production method thereof.
Background technology
Along with the development of power electronic technology, the application of various frequency changer circuits constantly expands, and the reverse recovery time of these circuit requirement fast diodes is short, and QRR is few, and has soft recovery characteristics.Figure 1 shows that inversion typical case main circuit, in its switch inversion transfer process, the interference of generation is in the time of output rectifier diode D1 or D2 cut-off.In the time that diode D1 or D2 all have hard recovery characteristics, this diode is in transformer leakage inductance and junction capacitance, under the resonance of distributed capacitance, can produce very high switching current burr or voltage glitch at switching tube IGBT two ends, and high more than added reverse voltage, by the output of severe jamming circuit and circuit itself, also can endanger load and inherently safe.
All PN junction diodes, in the time of conduction forward current, all store electric charge by the form with few son.When adding after reverse voltage on the diode in conducting, during due to conducting, in base, storage has a large amount of minority carriers, therefore these minority carriers will be extracted out completely or are neutralized during to cut-off and need certain hour, the recovery that is reverse blocking capability need to be through after a while, this process is exactly reversely restoring process, and it is trr reverse recovery time that this process timing definition used occurs.
Fig. 2 is diode reverse recovery current oscillogram, be made up of its reverse recovery time two parts: trr=tA+tB, memory time, tA was that knot edge minority carrier density reaches for zero time, recombination time, tB exhausted or time that compound residual charge is required, conventional tB/tA determines oppositely recovery softness factor S, and its S is larger, and soft recovery characteristics is better.Improve the softness factor S of diode, can significantly reduce decrease speed dirr/dt, inverse peak current IRM and the peak-inverse voltage VRM of reverse recovery current, greatly improve the reliability and stability of power device and circuit.
At present, softness factor S is high, the quick soft-recovery diode that soft recovery characteristics is good, and the one, select suitable minority carrier life time control method to produce, as expanded gold vessel part or electron irradiation device; The 2nd, produce by the structural design of improving diode, as epitaxial diode grooving structure and extension double-basis plot structure device etc.But all there is following problem in them: be all to carry out technological transformation for chip structure itself, make complex process, difficulty of processing is large, and product cost is high.
Summary of the invention
The present invention solves the problem that above-mentioned prior art quick soft-recovery diode exists, and a kind of new quick soft-recovery diode and production method thereof are provided, and its processing is simple, and cost is low, and soft recovery characteristics is good.
For achieving the above object, the present invention is by the following technical solutions:
A kind of quick soft-recovery diode, formed by least two fast diode parallel combinations, it is characterized in that: in described parallel combination, have the reverse recovery time of each fast diode: trra=(0.1-0.9) trrb, wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes.
Preferably, in described parallel combination, be the reverse recovery time of each fast diode: trra=(0.3-0.5) trrb, and wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes.
The production method of a kind of quick soft-recovery diode of the present invention, is characterized in that:
(a) choose at least two fast diodes, and have its reverse recovery time: trra=(0.1-0.9) trrb, wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes;
(b) the selected equal parallel combination of above-mentioned each fast diode is formed to a kind of quick soft-recovery diode.
Useful technique effect of the present invention is: form a kind of quick soft-recovery diode by the fast diode parallel combination at least two reverse recovery times with trra=(0.1-0.9) trrb relation, its processing is simple, cost is low, and the raising of softness factor S, and soft recovery characteristics is good.
brief description of the drawings
Fig. 1 is inversion typical case main circuit diagram.
Fig. 2 is fast diode reverse recovery current oscillogram.
Fig. 3 is the fast diode reverse recovery current oscillogram of larger reverse recovery time.
Fig. 4 is the fast diode reverse recovery current oscillogram of less reverse recovery time.
Fig. 5 is the reverse recovery current oscillogram of a kind of quick soft-recovery diode of the present invention.
embodiment
A kind of quick soft-recovery diode, formed by two fast diode parallel combinations, in this parallel combination, have the reverse recovery time of each fast diode: trra=(0.1-0.9) trrb, and wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes.Preferred trra=(0.3-0.5) trrb,
The present invention will form a kind of quick soft-recovery diode after a less fast diode of trra reverse recovery time and the larger fast diode parallel combination of other reverse recovery time of trrb, and its softness factor S improves, and soft recovery characteristics is good.
With reference to the accompanying drawings, the present invention is elaborated:
In Fig. 3 and Fig. 4, its reverse recovery time trr1=tA1+tB1, trr2=tA2+tB2, and memory time tA1 > tA2, recombination time tB1 > tB2, inverse peak current IRM1 > IRM2.
In Fig. 5, I3 is the reverse recovery current waveform of a kind of quick soft-recovery diode of the present invention, it is two stack result after fast diode parallel connection, its reverse recovery time trr3=trr1, and trr3=tA3+tB3, inverse peak current is IRM3, oppositely recovers softness factor S 3=tB3/tA3; I1 and I2 are respectively the reverse recovery current waveform of common fast diode, and it oppositely recovers softness factor S 1=tB1/tA1, S2=tB2/tA2.
Relatively I3 and I1 and I2 reverse recovery current oscillogram can obtain, tA1 > tA3 > tA2, tB3 > tB1 > tB2, IRM3 > IRM1, tB3/tA3 > tB1/tA1.Therefore, the reverse recovery softness factor S 3 > S1 of a kind of quick soft-recovery diode of the present invention, softness factor S 3 is improved, and soft recovery characteristics improves.
And, when the reverse recovery time of each fast diode in quick soft-recovery diode parallel combination of the present invention be: when trra=(G.3-0.5) trrb, its soft recovery effects is relatively good.As trr1 > trr2, when IRM2 > IRM1, its effect also will be better.
In like manner, a kind of quick soft-recovery diode of the present invention, also can be made up of more than two fast diode parallel combination, and in parallel combination, will have the reverse recovery time of each fast diode simultaneously: trra=(0.1-0.9) trrb.
Because be all extremely short the reverse recovery time of fast diode, actual track is difficult to detect and defines figure the reverse recovery time of described diode, and the tester of prior art all cannot directly be measured.But in the inversion typical case main circuit shown in Fig. 1, the impact of the softness of two output rectifier diode D1 or D2 in circuit is mainly reflected in switching tube IGBT two end switch instantaneous current spikes or voltage glitch.Therefore, be paired into D1 or D2 grouping and be connected on Fig. 1 circuit by the fast diode of multiple reverse recovery time is combined respectively, then use current spikes or the voltage glitch size of oscilloscope read switch pipe IGBT two end switch, then compare the softness that can judge output rectifier diode D1 or D2.
For example: select a 200A inverter type welder, put a magnet ring at the switching tube IGBT of its inverter circuit (as shown in Figure 1) output, on magnet ring, coiling 10 encloses, and connects a resistance at coil two ends, connects oscilloscope at these resistance two ends.Then by the fast diode of three kinds of different reverse recovery times respectively between two parallel combination become on D1 or D2 connecting circuit, the more corresponding welding machine when work switching tube IGBT two ends of reading open or close instantaneous electric current burr.
D1 in Fig. 1 and D2 all elect a kind of quick soft-recovery diode of the present invention as, and D1 is made up of two fast diode D11 and D12 parallel combination, and D2 is made up of two fast diode D21 and D22 parallel combination.Trr reverse recovery time of three kinds of fast diodes is respectively 30ns, 50ns and 70ns, and according to the form below combination is selected:
Obtain oscilloscope test result and show (number of squares);
A group: upper 1.5 lattice; Lower 1.2 lattice
B group: upper 1.3 lattice; Lower 1.1 lattice
C group: upper 1.6 lattice; Lower 1.3 lattice
D group: upper 1.8 lattice; Lower 1.6 lattice
E group: upper 2.1 lattice; Lower 2.0 lattice
F group: upper 2.3 lattice; Lower 2.2 lattice
From above-mentioned oscilloscope test result, as the D11 and 912 of parallel combination, or D21 is while being identical with trr reverse recovery time of D22, and it is higher that switching tube IGBT two ends open or close instantaneous current spikes; This recovery characteristics that shows D1 and D2 is harder.
As D11 and D12, or D21 is while being different from trr reverse recovery time of D22, and it is lower that switching tube IGBT two ends open or close instantaneous current spikes.It shows that D1 and D2 have good soft recovery characteristics.And in D1 or D2 when trra=reverse recovery time (0.4-0.43) trrb of two fast diodes of parallel combination, its soft recovery characteristics is best.The definition of trra and trrb is described above.
Therefore, a kind of quick soft-recovery diode of the present invention, can be formed by least two fast diode parallel combinations, condition be in parallel combination the reverse recovery time of each fast diode have: trra=(0.1-0.9) trrb, and do not need complicated production technology processing, implement simply, cost is low.Wherein the definition of trra and trrb is described above.
Should be understood that: above-described embodiment is just to explanation of the present invention, and any innovation and creation that do not exceed within the scope of connotation of the present invention, within all falling into protection scope of the present invention.
Claims (3)
1. a quick soft-recovery diode, formed by least two fast diode parallel combinations, it is characterized in that: in described parallel combination, have the reverse recovery time of each fast diode: trra=(0.1-0.9) trrb, wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes.
2. a kind of quick soft-recovery diode as claimed in claim 1, it is characterized in that: in described parallel combination, be the reverse recovery time of each fast diode: trra=(0.3-0.5) trrb, wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes.
3. the production method of a kind of quick soft-recovery diode as claimed in claim 1, is characterized in that:
(a) choose at least two fast diodes, and have its reverse recovery time: trra=(0.1-0.9) trrb, wherein trra is the reverse recovery time of a less fast diode; Trrb is the reverse recovery time of all the other any fast diodes;
(b) the selected equal parallel combination of above-mentioned each fast diode is formed to a kind of quick soft-recovery diode.
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| CN201110456082.7A CN102623512B (en) | 2011-12-18 | 2011-12-18 | Fast soft recovery diode and method for producing same |
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| CN201110456082.7A CN102623512B (en) | 2011-12-18 | 2011-12-18 | Fast soft recovery diode and method for producing same |
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| CN102623512B true CN102623512B (en) | 2014-10-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789779A (en) * | 1994-10-31 | 1998-08-04 | Nec Corporation | IGFET circuit preventing parasitic diode current |
| CN201438466U (en) * | 2009-06-16 | 2010-04-14 | 深圳市晶导电子有限公司 | ultra-fast recovery diode |
| CN201440416U (en) * | 2009-06-16 | 2010-04-21 | 深圳市晶导电子有限公司 | Fast recovery diode |
| CN102130580A (en) * | 2011-03-30 | 2011-07-20 | 艾默生网络能源系统北美公司 | Totem-pole bridgeless power factor correction circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000236663A (en) * | 1999-02-16 | 2000-08-29 | Sony Corp | Switching power supply circuit |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789779A (en) * | 1994-10-31 | 1998-08-04 | Nec Corporation | IGFET circuit preventing parasitic diode current |
| CN201438466U (en) * | 2009-06-16 | 2010-04-14 | 深圳市晶导电子有限公司 | ultra-fast recovery diode |
| CN201440416U (en) * | 2009-06-16 | 2010-04-21 | 深圳市晶导电子有限公司 | Fast recovery diode |
| CN102130580A (en) * | 2011-03-30 | 2011-07-20 | 艾默生网络能源系统北美公司 | Totem-pole bridgeless power factor correction circuit |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-236663A 2000.08.29 |
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Effective date of registration: 20220402 Address after: 321400 No. 317, Daqiao South Road, Wuyun street, Jinyun County, Lishui City, Zhejiang Province Patentee after: Zhejiang boxing Electronics Co.,Ltd. Address before: 321400 Zhejiang County of Jinyun Province town of Wu Yun Bridge Road No. 317 Patentee before: Zhou Lijing |