CN102620826B - There is the optical sensor being integrated in IR-cut interference filter on chip and color filter - Google Patents
There is the optical sensor being integrated in IR-cut interference filter on chip and color filter Download PDFInfo
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- CN102620826B CN102620826B CN201210022790.4A CN201210022790A CN102620826B CN 102620826 B CN102620826 B CN 102620826B CN 201210022790 A CN201210022790 A CN 201210022790A CN 102620826 B CN102620826 B CN 102620826B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
Subject application relates to the optical sensor having the IR be integrated on chip and end interference filter and color filter.The present invention describes the technology in order to supply light sensor, and described optical sensor comprises the patterned IR integrated with patterned look pass filter and ends interference filter.In one or more embodiments, described optical sensor comprises the substrate with a surface.Form in the described surface of described substrate the IR being configured to stop infrared light and end interference filter.Described optical sensor also comprises one or more look pass filters be positioned over above described IR cut-off interference filter or below.Described look pass filter is configured to filter the light in limited wavelength spectrum is passed through to visible ray and arrives one or more photoelectric detectors described.In one embodiment, square one-tenth cushion and described cushion are configured to be encapsulated multiple look pass filter to promote that described IR ends the formation of interference filter on said surface.
Description
Technical field
There is the optical sensor being integrated in IR-cut interference filter on chip and color filter.
Background technology
Such as smart phone, flat computer, digital media player etc. electronic installation adopts optical sensor to control the manipulation of the several functions provided by described device more and more.For example, optical sensor can by electronic installation in order to detect ambient light conditions to control the brightness of the display screen of described device.Typical optical sensor adopts the such as photoelectric detector such as photodiode, phototransistor, and it converts received light to electric signal (such as, curtage).But the response of this little photoelectric detector can be subject to the impact of the existence of infrared (IR) light (electromagnetic radiation with the wavelength being greater than about 700 nanometers (nm) that such as, can be detected by photoelectric detector).For example, the optical sensor of electronic installation can indicate surrounding environment than its actual conditions " brighter ", because around through lighting environment contain than normally large ratio infrared light (such as, when by around artificial light supply through lighting environment etc.).
Summary of the invention
Describe a kind of optical sensor, it comprises the IR cut-off interference filter and at least one look pass filter that are integrated in and chip (such as, is integrated on the nude film of described optical sensor).In one or more embodiments, described optical sensor comprises the semiconductor device (such as, nude film) comprising substrate.Photoelectric detector (such as, photodiode, phototransistor etc.) is formed close to the surface of described substrate in described substrate.Above described photoelectric detector, settle IR to end interference filter.Described IR ends interference filter and is configured to filter at least roughly stop that infrared light arrives described photoelectric detector to the infrared light carrying out the light that freely described optical sensor receives.At least one the look pass filter of the absorption filter such as usually making a frequency band of infrared light and visible ray pass through is positioned over described IR to end above interference filter or below.Described look pass filter is configured to filter to make the light in limited wavelength spectrum (such as, having the light of the wavelength between first wave length and second wave length) pass through and arrive at least one in described photoelectric detector to the visible ray received by described optical sensor.Described photoelectric detector also can comprise one or more transparent photoelectric detecting devices, one or more transparent photoelectric detecting devices described are configured to receive the light do not filtered by look pass filter, allow described transparent photoelectric detecting device to detect ambient light environment whereby.The surface of ending interference filter or look pass filter (such as, absorption filter) at IR forms cushion to promote respectively to form described look pass filter or IR cut-off interference filter.
There is provided this abstract of invention to introduce the conceptual choice hereafter further described in a specific embodiment by reduced form herein.This abstract of invention is not intended to identify that key feature or the key character of subject matter are advocated by institute, is not intended for use to assist the scope determining advocated subject matter yet.
Accompanying drawing explanation
With reference to accompanying drawing, embodiment is described.Use identical reference numerals can indicate similar or equivalent items in different instances in description and each figure.
Figure 1A is the schematic section cross-sectional side view with the optical sensor of IR cut-off interference filter, multiple look pass filter and cushion of graphic extension embodiment according to the present invention embodiment.
Figure 1B is the schematic section cross-sectional side view with the optical sensor of IR cut-off interference filter, multiple look pass filter and cushion of graphic extension embodiment according to the present invention embodiment, and wherein said optical sensor comprises further and ends the periphery formation of interference filter and cushion to stop the dark mirror edge that infrared and visible ray enters around described IR.
Fig. 2 A is the schematic section cross-sectional side view with the optical sensor of IR cut-off interference filter, multiple look pass filter and cushion of graphic extension embodiment according to the present invention embodiment, and a part for wherein said cushion is removed and described multiple look pass filter is formed in the region wherein removing described cushion.
Fig. 2 B is the schematic section cross-sectional side view with the optical sensor of IR cut-off interference filter, multiple look pass filter and cushion of graphic extension embodiment according to the present invention embodiment, a part for wherein said cushion is removed and described multiple look pass filter is formed in the region wherein removing described cushion, and the periphery that wherein said optical sensor comprises further around described IR cut-off interference filter is formed to stop the dark mirror edge that infrared and visible ray enters.
Fig. 3 A is the schematic top plan view of the optical sensor of graphic extension Figure 1A and 2A.
Fig. 3 B is the schematic top plan view of the optical sensor of graphic extension Figure 1B and 2B.
Fig. 4 is with the process flow diagram of exemplary embodiment graphic extension according to the exemplary process for making the optical sensor with IR cut-off interference filter, multiple look pass filter and cushion of the present invention.
Fig. 5 is with the process flow diagram of exemplary embodiment graphic extension according to another exemplary process for making the optical sensor with IR cut-off interference filter, multiple look pass filter and cushion of the present invention.
Embodiment
general introduction
In order to filter infrared light, optical sensor can adopt infrared block optical filter to reduce the transmission of infrared light, makes visible ray pass through and arrive the photodetector array of described optical sensor simultaneously.This little IR barrier filter is made up of IR cut material, and described IR cut material is applied to described encapsulation in outside after making optical sensor package.This configuration not only stops that infrared light arrives photodiode effectively, and roughly reduction arrives the amount of the infrared light of the infrared detector of described optical sensor.Therefore, gained optical sensor reduces the susceptibility of infrared light.In addition, visible light sensor can adopt subtracting techniques (such as, subtraction circuit) to remove infrared light with wafer scale.But, along with the light detected in limited wavelength spectrum (such as, " blueness " light, " green " light, " redness " light etc.) need more photoelectric detector, spacing constraint limits continuation and utilizes the die area that can be used for look pass filter, photoelectric detector and subtraction circuit on the same chip.
Therefore, describe a kind of optical sensor, it comprises the IR cut-off interference filter and at least one look pass filter that are integrated in and chip (such as, is integrated on the nude film of described optical sensor).In this way, described IR ends that interference filter can patterned infrared light arrives the infrared detector of described optical sensor to make it not stop.In one or more embodiments, described optical sensor is made as the semiconductor device comprising the nude film with substrate.The such as photoelectric detector such as photodiode, phototransistor is formed close to the surface of described substrate in described substrate.Surface close to described substrate settles described IR to end interference filter above described photoelectric detector.Described IR ends interference filter and is configured to filter at least roughly stop that infrared light arrives described photoelectric detector to the infrared light carrying out the light that freely described optical sensor receives.But end interference filter by forming described IR over the substrate, described IR ends interference filter and can patternedly make it not stop that infrared light arrives the infrared detector of described optical sensor.One or more look pass filters are positioned over described IR to end above interference filter or below.For example, can to end on interference filter or described IR ends below interference filter and forms look pass filter (such as, red, green, blue color filter) on the surface of described substrate at IR.Described look pass filter is configured to filter to make the light in limited wavelength spectrum (such as, having the light of the wavelength between first wave length and second wave length) pass through and arrive at least one in described photoelectric detector to the visible ray received by described optical sensor.Described photoelectric detector also can comprise one or more transparent photoelectric detecting devices, one or more transparent photoelectric detecting devices described are configured to receive the light do not filtered by look pass filter, allow described transparent photoelectric detecting device to detect ambient light environment whereby.
With wafer scale on a surface of the substrate square one-tenth cushion to promote that forming described IR during the making of optical sensor ends interference filter and look pass filter.In one embodiment, the surface of described substrate forms described look pass filter.Then described cushion is applied to the surface of described substrate above look pass filter.Described cushion roughly encapsulates described look pass filter to protect described optical filter and carry out complanation to wafer during further treatment step.Above described cushion, form IR end interference filter and be patterned.In another embodiment, on the surface of described substrate, first form described IR end interference filter.Then above described IR cut-off interference filter, described cushion is applied to the surface of described substrate and forms look pass filter above described cushion.Described cushion can be removed at least partially after the described look pass filter of formation.Therefore described cushion serves as and carries out complanation to form the sacrifice layer of described look pass filter to wafer.
The formation dark mirror edge, periphery of interference filter also can be ended around IR.Described dark mirror edge is configured at least roughly eliminate and does not end the light of interference filter to the shock on described photoelectric detector through IR.
In the following discussion, first the exemplary embodiment comprising the IR be integrated on chip and end the optical sensor of interference filter and at least one look pass filter is described.Then discussing can in order to the exemplary program of example of making optical sensor.
exemplary embodiment
The optical sensor 100 of Figure 1A to 3B graphic extension embodiment according to the present invention embodiment.As demonstrated, optical sensor 100 comprises the semiconductor device comprising the nude film with substrate 102.Substrate 102 supplies the base material in order to form one or more electronic installations via the various manufacturing technology of such as photoetching, implanted ions, deposition, etching etc.Substrate 102 can comprise N-shaped silicon (such as, with V group element (such as, phosphorus, arsenic, antimony etc.) doped silicon to be to give described silicon supply N-shaped charge carriers daughter element) or p-type silicon is (such as, with IIIA race element (such as, boron etc.) doped silicon to give described silicon supply p-type charge carriers daughter element).Substrate 102 can be made up of one or more insulation courses 104 further and can comprise silicon dioxide layer 104A and silicon nitride layer 104B.
Substrate 102 is illustrated as there is surface 106.Photoelectric detector (showing photoelectric detector 108,118,120) array is formed with close to surface 106 in substrate 102.Photoelectric detector 108,118,120 in described array can configure in many ways.For example, photoelectric detector 108,118,120 can be made up of photoelectric sensor diode, phototransistor etc.In one embodiment, photoelectric detector 108,118,120 can detect light and provide signal in response to described light.Photoelectric detector 108,118,120 can provide signal based on the intensity of detected light by converting light to curtage.Therefore, once photoelectric detector 108,118,120 is exposed to light, multiple free electron just can be produced to form electric current.Photoelectric detector 108,118,120 is configured to detect the light in both visible light and infrared light spectrum.As used herein, the present invention expects that the electromagnetic radiation occurred in visible light and infrared light spectrum included in term " light ".Visible light (visible ray) is included in the electromagnetic radiation occurred to the wavelength coverage of about 750 (750) nanometers from about 390 (390) nanometers.Similarly, infrared light spectrum (infrared light) comprises the electromagnetic radiation of wavelength in from about 700 (700) nanometers to the scope of about 300,000 (300,000) nanometer.In some embodiments, complementary metal oxide semiconductor (CMOS) (CMOS) manufacturing technology can be utilized to form photoelectric detector 108,118,120.
Look pass filter 110 is illustrated as close to surface 106.Look pass filter 110 is configured to filter to make the light in limited wavelength spectrum (such as, having the light of the wavelength between first wave length and second wave length) pass through and arrive at least one in photoelectric detector 108 to the visible ray received by optical sensor 100.In one embodiment, look pass filter 110 can comprise absorption filter, and it allows the visible ray in limited wavelength spectrum to pass described optical filter, stops the visible ray in (such as, absorbing or reflection) second wave length spectrum simultaneously.Therefore, look pass filter 110 can be roughly transparent for the visible ray in first wave length spectrum and for roughly opaque in second wave length spectrum.
Multiple patterned look pass filter 110 can be provided.For example, optical sensor 100 can comprise and is configured to filter visible ray and makes to have the first limited wavelength (such as, wavelength between first wave length and second wave length) the first look pass filter 110A of passing through of the light of spectrum, be configured to filter visible ray and make to there is the second limited wavelength (such as, wavelength between the 3rd wavelength and the 4th wavelength) the second look pass filter 110B of passing through of the light of spectrum, and be configured to filter visible ray and make to there is the 3rd wavelength (such as, wavelength between the 5th wavelength and the 6th wavelength) the 3rd look pass filter 110C that passes through of the light of spectrum, etc..In illustrated example, optical sensor 100 is made up of the array of following three kinds of not homochromy pass filters 110: first (blueness) look pass filter 110A, it is configured to transmission " blueness " visible ray (such as, having the visible ray of the wavelength between about 450 (450) nanometers and about 475 (475) nanometers); Second (green) look pass filter 110B, it is configured to transmission " green " visible ray (such as, having the visible ray of the wavelength between about 495 (495) nanometers and about 570 (570) nanometers); And the 3rd (redness) look pass filter 110C, it is configured to transmission " redness " visible ray (such as, having the visible ray of the wavelength between about 620 (620) nanometers and about 750 (750) nanometers).The present invention's expection can adopt other visible photochromic pass filter 110.Look pass filter 110 also can make infrared light pass through.For example, can provide and be configured to the look pass filter 110 that transmission has the visible ray of the limited wavelength spectrum be usually associated with the color of cyan, magenta, yellow etc.Look pass filter 110 is optionally arranged in above photoelectric detector 108 to allow institute to want the visible ray in limited wavelength spectrum to pass look pass filter 110 and arrive photoelectric detector 108.For example, as as shown in Figure 1A to 2B, first look pass filter 110A is positioned above the first photoelectric detector 108A, and the second look pass filter 110B is positioned above the second photoelectric detector 108B, and the 3rd optical filter 110C is positioned above the 3rd photoelectric detector 108C.
In embodiment illustrated in Figure 1A to 2B, the applicable deposition technique of such as spin coating and photo-patterning is used to form look pass filter 110 above surface 106.In exemplary embodiment, look pass filter 110 has the thickness of about one (1) micron.But the present invention's expection has the look pass filter 110 of smaller or greater thickness also for possible.Look pass filter 110 can be formed to be at once held in appropriate location by look pass filter 110 after completing deposition technique on adhesion layer 112.
Look pass filter 110 and IR end interference filter 116 and combine, because look pass filter 110 also may make infrared light pass through.In Fig. 2 A and 2B, IR is ended interference filter 116 be illustrated as be formed at substrate 102 surface 106 on the top of photoelectric detector 108.IR ends interference filter 116 and is configured to filter at least roughly stop that infrared light arrives photoelectric detector to the infrared light carrying out the light that free optical sensor receives.For example, in exemplary embodiment, can provide and can stop and be incident in infrared light on photoelectric detector 108 (such as, light in infrared spectrum) 50 (50) to 100 (100) about percent simultaneously cause at least greatly visible ray (such as, light in visible spectrum) by (such as, making to be greater than 50 (50) about percent to pass through) and arrive photoelectric detector 108 IR end interference filter 116.But aforementioned value (such as, represent end the percent value of the ratio of infrared light that interference filter 116 stops and/or pass through by IR) can be depending on the application-specific requirement of optical sensor 100.Therefore, the present invention's expection can stop that the IR of the infrared light of higher or lower ratio and/or the visible ray of the higher or lower ratio of transmission ends interference filter 116.
IR ends interference filter 116 and can configure in many ways.In one embodiment, IR ends the sandwich construction that interference filter 116 can comprise at least two kinds of different materials comprising different refractivity.IR ends interference filter 116 and can be about five (5) to 15 (15) micron thickness and/or about 70 (70) to 120 (120) individual thickness.In specific embodiments, IR cut-off interference filter 116 can be about ten (10) micron thickness and/or about 90 (90) to 100 (100) individual thickness.But the present invention expects that IR ends interference filter 116 and can have other structure (such as, the number of layer) and/or thickness.
In one or more embodiments, optical sensor 100 can be configured to comprise one or more infrared detectors 118 (such as, be formed at the photoelectric detector 108 in the substrate 102 of optical sensor 100 nude film, it is configured to detect the light in infrared spectrum).These photoelectric detectors 118 as the proximity transducer be implemented in electronic installation a part detect can (for example) by infrared transmitter (such as, infrarede emitting diode (LED)) infrared light (light such as, in infrared spectrum) launched.Therefore, IR ends interference filter 116 and can patternedly make it not to be blocked on infrared detector 118 to infrared light (such as, light in infrared spectrum) reception, increasing optical sensor whereby to the susceptibility of infrared light improves the performance of device adopting optical sensor 100 (proximity transducer such as, in electronic installation).
Cushion 114 is formed to promote to end the integrated of interference filter 116 and/or look pass filter 110 to IR during the making of optical sensor 100 above the surface 106 of substrate 102.In the embodiment shown in Figure 1A and 1B, the surface 106 of substrate 102 forms look pass filter 110.For example, be formed at surface 106 on adhesion layer 112 on form look pass filter 110.Then cushion 114 is applied to the surface 106 of substrate 102 above look pass filter 110.In this embodiment; cushion 114 is roughly encapsulated look pass filter 110 and is formed to protect described optical filter and carry out complanation to wafer during further treatment step to form IR cut-off interference filter 116, IR cut-off interference filter 116 and be patterned in above cushion 114.In the embodiment shown in Fig. 2 A and 2B, on the surface 106 of substrate 102, first form IR end interference filter 116.Then the surface 106 above interference filter 116, cushion 114 being applied to substrate 102 is ended at IR.Cushion 114 serves as and carries out complanation to be formed at the accurate sacrifice layer of the look pass filter 110 above cushion 114 to wafer.In this embodiment, above IR cut-off interference filter 116, adhesion layer 112 is formed.Then look pass filter 110 can be formed on adhesion layer 112.Before forming look pass filter 110, via lithographic patterning techniques or etching technique at least partially patterning is carried out to cushion 114.The remainder of cushion 114 can be removed after forming look pass filter 110.Visible and the infrared light of cushion 114 transmission.In one or more embodiments, cushion 114 can be made up of polymeric layer (such as benzocyclobutene (BCB) polymkeric substance).But the present invention's expection can use other to be encapsulated padded coaming.
The array of photoelectric detector 108 can comprise one or more transparent photoelectric detecting devices 120 being configured to receive the light do not filtered by look pass filter 110 further.As illustrated, transparent photoelectric detecting device 120 can be positioned to make in substrate 102 it to be positioned IR to end below interference filter 110 but not to be positioned at below look pass filter 110.Therefore, transparent photoelectric detecting device 120 detects the light (such as, from the light of visible spectrum) in the spectrum of the wavelength corresponding to several visible colors.In this way, transparent photoelectric detecting device 120 can be used to detect visible ambient light conditions when there is not infrared interference.
Transparent photoelectric detecting device 120 can configure in many ways.For example, as other photoelectric detector 108 in array, transparent photoelectric detecting device 120 can comprise the photodiode, phototransistor etc. that can detect light by light being converted to curtage.In one embodiment, the signal (such as, curtage) produced by transparent photoelectric detecting device 120 is the institute's detected intensity (such as, proportional with it) based on received visible ray.Therefore, the intensity of surrounding's lighting level that the portable electron device (displaying) that transparent photoelectric detecting device 120 can be used to detect wherein be integrated with optical sensor 100 is outside.The gained tolerance of ambient light intensity can be utilized by the various application programs run in described portable electron device.For example, the application program of described portable electron device can control the brightness of display screen based on ambient light intensity.
In Figure 1B, 2B and 3B, illustrated optical sensor 100 comprises the dark mirror edge 122 being configured at least roughly eliminate the shock of light on photoelectric detector 108 not ending interference filter 116 through IR further.Dark mirror edge 122 is formed by the opaque material of not transmitted light (visible ray and infrared light).In fig. ib, dark mirror edge 122 is shown as and is formed at above IR cut-off interference filter 116 and cushion 114, make it cover the edge of IR cut-off interference filter 116 and cushion 114.In fig. 2b, dark mirror edge 122 is shown as is formed at IR and ends above interference filter 116 but below cushion 114.As shown in Figure 3 B, dark mirror edge 122 can end the surrounding location of interference filter 116 around IR.Dark mirror edge 122 also can cover the edge of cushion 114 roughly to stop that light passes the edge (see Figure 1B) of cushion 114.But the present invention expects that dark mirror edge 122 can be depending on application and requires and have multiple patterns.
Insulating material 124 can be applied to provide insulation and the protection of the various structures (such as, photoelectric detector 108, look pass filter 110, cushion 114, interference filter 116 etc.) to sensor 100 above the surface 106 of substrate 102.In one or more embodiments, insulating material 124 is epoxide resin material.But, can to use and the present invention expects other insulating material.
As discussed above, transparent photoelectric detecting device 120 can be arranged together through the photoelectric detector 108 of the light of look pass filter 110 (such as, absorption filter) with reception.In embodiment illustrated in Fig. 3 A and 3B, show that transparent photoelectric detecting device 120 is positioned in one or more unit (clear sensor unit 302) arranged together with the unit (color sensor unit 304) containing the photoelectric detector 108 received through the light of look pass filter 110.Therefore, in illustrated embodiment, optical sensor 100 can comprise unit 302, the array 306 of 304, it has one or more clear sensor unit 302 not comprising look pass filter 110, comprise the first look pass filter 110A (such as, blue look pass filter) one or more the first color sensor unit 304A, comprise the second look pass filter 110B (such as, green look pass filter) one or more the second color sensor unit 304B, comprise the 3rd look pass filter 110C (such as, red look pass filter) one or more the 3rd unit 304C, etc..As mentioned above, the present invention expects that optical sensor 100 can adopt various visible photochromic pass filter 110.Therefore, color sensor unit 304 can comprise and is configured to the look pass filter 110 of light that transmission has cyan, magenta, yellow etc. color.
In various embodiments, optical sensor 100 described herein can be configured to detect ambient light environment and/or provide infrared light detection (such as, with for use as proximity transducer).Look pass filter 110 is configured to filter visible ray and makes the light in limited wavelength spectrum pass through and arrive corresponding light photodetector 108.Photoelectric detector 108 based on light intensity and produce signal (such as, current value).IR ends interference filter 116 and is configured to filter roughly to stop that infrared light arrives photoelectric detector 108 to infrared light.Transparent photoelectric detecting device 120 detect ambient light conditions when there is not color filtration and based on detected visible ray intensity and produce signal (such as, current value).The signal produced by photoelectric detector 108 and transparent photoelectric detecting device 120 can by other circuit arrangement and/or application program in order to control the various aspects (such as, the brightness of the display screen of control device is to turn off backlight thus to save battery life etc.) of portable electron device.Infrared detector 118 can detect infrared light (light such as, in infrared spectrum) and based on detected infrared light intensity and produce signal (such as, current value).The signal produced by infrared detector 118 can by other circuit arrangement and/or application program in order to control the various aspects of portable electron device.For example, infrared light can be launched by infrared transmitter (such as, infrarede emitting diode (LED)) and be detected by the infrared detector 118 of the optical sensor 100 of the part as the infrared image sensor be implemented in electronic installation or proximity transducer.IR ends interference filter 116 and can patternedly make it not stop by the reception of infrared detector 118 pairs of infrared lights, to increase optical sensor whereby to the susceptibility of infrared light and improves the performance of device adopting optical sensor 100.
exemplary manufacturing process
Below discuss the exemplary technique described for making optical sensor, described optical sensor comprises the IR cut-off interference filter and at least one look pass filter that are integrated in and chip (such as, is integrated on the nude film of described optical sensor).In hereafter described embodiment, utilize rear end complementary metal oxide semiconductor (CMOS) (CMOS) treatment technology to make described optical sensor.But the present invention's expection can use other semiconductor chip fabrication/encapsulation technology (such as wafer-class encapsulation (WLP) etc.) to make according to optical sensor of the present invention.
Fig. 4 describes the technique 400 for making optical sensor (in such as Figure 1A, 1B, 3A and 3B illustrated and exemplary optical sensor 100 as described above) with exemplary embodiment.In illustrated technique 400, in the substrate of wafer, form one or more photoelectric detectors (frame 402).Mentioned by the discussion of Figure 1A and 1B, described substrate can comprise N-shaped silicon (such as, with V group element (such as, phosphorus, arsenic, antimony etc.) doped silicon to be to give described silicon supply N-shaped charge carriers daughter element) or p-type silicon is (such as, with IIIA race element (such as, boron etc.) doped silicon to give described silicon supply p-type charge carriers daughter element).Therefore, described substrate supply is in order to the base material of the photoelectric detector and other electronic installation that form described optical sensor.Described photoelectric detector can comprise using and be applicable to manufacturing technology (such as photoetching, implanted ions, deposition, etching etc.) and be formed at photodiode, phototransistor etc. in the substrate of wafer.In one or more embodiments, at least one photoelectric detector in multiple photoelectric detector can comprise the infrared detector being configured to detect infrared light (light in infrared spectrum).
One or more look pass filters of square one-tenth (frame 404) on a surface of the substrate.For example, in various embodiments, can form described look pass filter at adhesive layer, described adhesion layer is configured to described look pass filter to adhere to described look pass filter surface formed thereon (frame 406).As shown in Figure 1A and 1B, described look pass filter can be made with corresponding light photodetector to aim to filter the light received by described photoelectric detector.When being formed, described look pass filter can have the thickness of about one (1) micron.But the present invention's expection has the look pass filter of smaller or greater thickness also for possible.
In illustrated technique 400, above described look pass filter, form cushion and IR cut-off interference filter (frame 408).Square one-tenth IR ends interference filter (frame 410) on the buffer layer.Then square one-tenth cushion on a surface of the substrate, makes described cushion roughly encapsulate or is encapsulated described look pass filter (frame 412).Mentioned by the discussion of Figure 1A and 1B, described cushion can be made up of polymkeric substance (such as based on the polymkeric substance of BCB) and applicable deposition technique can be used to be formed.
Described IR ends interference filter and can patternedly further make it not stop by the reception of the infrared detector be formed in substrate to infrared light (such as, the light in infrared spectrum), described in the discussion at frame 402.For example, in exemplary embodiment, described IR ends interference filter can comprise the sandwich construction comprising and have different refractivity separately and stop two kinds of different materials of infrared light to form interference effect.In this little embodiment, can use respective sputter deposition techniques on wafer, form IR and end each layer of interference filter and use resist lift-off technology to carry out patterning to each layer described.But the present invention's expection can adopt other technology, including but not limited to: chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE) and ald (ALD).When being formed, described IR ends interference filter and can be about five (5) to about 15 (15) micron thickness and/or about 70 (70) to 120 (120) individual thickness.But the present invention expects that described IR ends interference filter and can have other structure and/or thickness.Utilize cushion to promote that IR ends the formation of interference filter and/or look pass filter.
In one or more embodiments, the edge of the periphery and/or cushion that can end interference filter around IR provides dark mirror edge (frame 414) roughly to eliminate the shock of light on photoelectric detector not ending interference filter through IR.Described dark mirror edge is formed by the opaque material (such as, metal/oxide multilayer etc.) of not transmitted light (visible ray and infrared light).Multiple technologies (such as via deposition/patterning techniques etc.) can be used to form described dark mirror edge.For example, sputter and photoresist lift-off technology can be utilized to form described dark mirror edge.
Fig. 5 describes the technique 500 for making optical sensor (exemplary optical sensor 100 illustrated in such as Fig. 2 A, 2B, 3A and 3B) with exemplary embodiment.In illustrated technique 500, in the substrate of wafer, again form one or more photoelectric detectors (frame 502).As described in the discussion of Fig. 4, described substrate supply is in order to the base material of the photoelectric detector and other electronic installation that form optical sensor.
Form IR in the surface of described substrate and end interference filter (frame 504).In illustrated technique 500, directly form described IR on a surface of the substrate and end interference filter.In one or more embodiments, can again provide dark mirror edge (frame 506) roughly to eliminate the shock of light on photoelectric detector not ending interference filter through described IR around the periphery of IR cut-off interference filter.Formed and end interference filter around IR at least in part and end the overlapping cushion of interference filter (frame 508) with described IR at least in part.Described in the discussion at above Fig. 2 A and 2B, described cushion serves as in order to allow to carry out complanation to promote the accurate sacrificial buffer layers of the formation of look pass filter to IR cut-off interference filter.
Then end above interference filter and/or cushion at IR and form adhesion layer (frame 510).Then end above interference filter at IR and form one or more look pass filters (frame 512).As described in the frame 404 of Fig. 4 and the discussion of frame 406, described look pass filter can be made with corresponding light photodetector to aim to filter the light received by described photoelectric detector (as shown in Fig. 2 A and 2B).Can form one or more look pass filters (frame 514) at adhesive layer, described adhesion layer is configured to look pass filter be adhered to described look pass filter surface formed thereon.
As mentioned, rear end complementary metal oxide semiconductor (CMOS) (CMOS) treatment technology can be utilized to make described optical sensor.Therefore, photoelectric detector, look pass filter, cushion and IR cut-off interference filter can be formed by wafer scale.After this described wafer cut into one or more nude films and individually encapsulate each nude film to form optical sensor.Also can after formation described photoelectric detector, look pass filter, cushion and IR end interference filter, use wafer-class encapsulation (WLP) technology to process wafer further and cut described wafer to form one or more optical sensors.
conclusion
Although describe subject matter with the language being exclusively used in architectural feature and/or technological operation, should be understood that the subject matter defined in the dependent claims may not be limited to special characteristic as described above or action.But special characteristic as described above and action are disclosed as the exemplary forms implementing described claims.
Claims (20)
1. an optical sensor, it comprises:
Substrate, it has a surface;
Multiple photoelectric detector, it to be formed in described substrate and to be configured to detect light and provide signal in response to described light;
One or more look pass filter, it is placed in described surface and is configured to filter the light in limited wavelength spectrum is passed through to visible ray and arrive the one or more photoelectric detectors in described photoelectric detector;
Cushion, it is placed in described surface and makes described cushion at least encapsulate described one or more look pass filter; And
IR ends interference filter, and it to be placed in above described cushion and to be configured to filter at least to stop that infrared light arrives described photoelectric detector to infrared light,
At least one in wherein said photoelectric detector comprises transparent photoelectric detecting device, and described transparent photoelectric detecting device is configured to receive the light that do not filtered by described one or more look pass filter to detect ambient light environment.
2. optical sensor according to claim 1, wherein said cushion comprises polymkeric substance.
3. optical sensor according to claim 1, it is that patternable IR ends interference filter that wherein said IR ends interference filter.
4. optical sensor according to claim 1, it comprises the adhesion layer be placed between described surface and described one or more look pass filter further.
5. optical sensor according to claim 1, it comprises further:
Insulation course, it is placed in described surface and makes described insulation course encapsulate described one or more look pass filter, described cushion and described IR cut-off interference filter.
6. optical sensor according to claim 1, the dark mirror edge that its edge comprising the periphery and described cushion of ending interference filter around described IR is further formed, described dark mirror edge is configured at least eliminate and does not end the shock of the light of interference filter through described IR and at least stop the described edge of light through described cushion.
7. an optical sensor, it comprises:
Substrate, it has a surface;
Multiple photoelectric detector, it is formed in described substrate, and described photoelectric detector is configured to detect light and provide signal in response to described light;
IR ends interference filter, and it is formed at described surface and is configured to filter at least to stop that infrared light arrives described photoelectric detector to infrared light;
One or more look pass filter, it is formed close to described IR ends interference filter and is configured to filter the light in limited wavelength spectrum is passed through to visible ray and arrives the one or more photoelectric detectors in described photoelectric detector; And
Cushion, its described surface being formed at described substrate to promote that described IR ends the formation of at least one in interference filter or described look pass filter,
Wherein said photoelectric detector comprises transparent photoelectric detecting device, and described transparent photoelectric detecting device is configured to receive the light that do not filtered by described one or more look pass filter to detect ambient light environment.
8. optical sensor according to claim 7, the dark mirror edge that its edge comprising the periphery and described cushion of ending interference filter around described IR is further formed, described dark mirror edge is configured at least eliminate and does not end the shock of the light of interference filter through described IR and at least stop the described edge of light through described cushion.
9. optical sensor according to claim 7, it comprises further and is formed at described surface for the adhesion layer be held in by described one or more look pass filter in appropriate location.
10. optical sensor according to claim 9, wherein said one or more look pass filter is formed on described adhesion layer, described cushion is formed at described surface and makes described cushion encapsulate described one or more look pass filter, and described IR cut-off interference filter is formed at above described cushion at least in part.
11. optical sensors according to claim 7, wherein said photoelectric detector comprises at least one in photodiode or phototransistor.
12. optical sensors according to claim 7, it is that patternable IR ends interference filter that wherein said IR ends interference filter.
13. 1 kinds of methods for the formation of optical sensor, it comprises:
Form multiple photoelectric detector in the substrate, described photoelectric detector is configured to detect light and provide signal in response to described light;
The one or more look pass filter of square one-tenth on a surface of the substrate, described one or more look pass filter is configured to filter the light in limited wavelength spectrum is passed through to visible ray and arrive the one or more photoelectric detectors in described photoelectric detector;
Cushion is formed close to described surface; And
Square one-tenth IR ends interference filter on said surface, and described IR ends interference filter and is configured at least stop that infrared light arrives described photoelectric detector,
Wherein said photoelectric detector comprises transparent photoelectric detecting device, and described transparent photoelectric detecting device is configured to receive the light that do not filtered by described one or more look pass filter to detect ambient light environment.
14. methods according to claim 13, wherein form described one or more look pass filter and comprise further:
Square one-tenth adhesion layer on said surface, described adhesion layer is configured to described one or more look pass filter to be held in appropriate location; And
Described adhesion layer is formed described one or more look pass filter.
15. methods according to claim 14, it comprises further:
Form described cushion in the described surface of described substrate, make described cushion encapsulate described one or more look pass filter to protect described one or more look pass filter and to make it insulate; And
Form described IR in the surface of described cushion and end interference filter,
Wherein said IR end interference filter at least with described one or more look pass filter coextensive.
16. methods according to claim 14, it comprises further:
Form described IR in the described surface of described substrate and end interference filter;
Forming described cushion makes it end interference filter around described IR at least in part and be positioned in the part on surface of described IR cut-off interference filter;
At least partially complanation is carried out to described cushion;
The another part on the described surface of described IR cut-off interference filter forms described adhesion layer; And
Described adhesion layer is formed described one or more look pass filter.
17. methods according to claim 13, wherein said cushion comprises benzocyclobutene BCB polymkeric substance.
18. methods according to claim 13, it comprises further and ends interference filter and described cushion formation dark mirror edge around described IR, and described dark mirror edge is configured at least eliminate and does not end the light of interference filter to the shock on described photoelectric detector through described IR.
19. methods according to claim 13, wherein form described photoelectric detector, described one or more look pass filter, described cushion and described IR with wafer scale and end interference filter, and wherein after this described wafer is cut into one or more nude film, individually encapsulate at least one in described nude film to form optical sensor.
20. methods according to claim 13, wherein form described photoelectric detector, described one or more look pass filter, described cushion and described IR with wafer scale and end interference filter, and wherein use wafer-class encapsulation WLP process described wafer further and cut described wafer to form one or more optical sensor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| US13/014,549 US8598672B2 (en) | 2011-01-26 | 2011-01-26 | Light sensor having IR cut interference filter with color filter integrated on-chip |
| US13/014,549 | 2011-01-26 |
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| CN102620826A CN102620826A (en) | 2012-08-01 |
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| US20140035012A1 (en) | 2014-02-06 |
| CN102620826A (en) | 2012-08-01 |
| US8598672B2 (en) | 2013-12-03 |
| DE102012001481A1 (en) | 2012-07-26 |
| US8809099B2 (en) | 2014-08-19 |
| US20120187512A1 (en) | 2012-07-26 |
| US9129874B1 (en) | 2015-09-08 |
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