CN102618847A - Metal organic chemical vapor deposition reaction system - Google Patents
Metal organic chemical vapor deposition reaction system Download PDFInfo
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- CN102618847A CN102618847A CN2012101279022A CN201210127902A CN102618847A CN 102618847 A CN102618847 A CN 102618847A CN 2012101279022 A CN2012101279022 A CN 2012101279022A CN 201210127902 A CN201210127902 A CN 201210127902A CN 102618847 A CN102618847 A CN 102618847A
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Abstract
The invention relates to a metal organic chemical vapor deposition reaction system, in particular to an ultraviolet-assisted metal organic chemical vapor deposition reaction system, which comprises a reaction chamber, a rinsing device which is arranged on the top part inside the reaction chamber and a heating device which is arranged on the bottom part of the reaction chamber, and the metal organic chemical vapor deposition reaction system also comprises quartz windows on two side walls of the reaction chamber and an ultraviolet light source assembly which is opposite to the quartz windows and is fixed on the outer wall of the reaction chamber. The system has a simple structure and is convenient to disassemble and maintain, uniformity in radiation can be achieved, chemical reaction activity can be stimulated, the reaction temperature can be reduced, and the glass can be prevented from being deformed in high temperature.
Description
Technical field
The present invention relates to a kind of metal organic chemical vapor deposition reactive system, relate to the long-pending reactive system of a kind of ultraviolet assisted metalorganic chemical vapor deposition specifically.
Background technology
The glass of transparent conductive oxide (TCO) thin film deposition has very wide application prospect in opto-electronic devices such as FPD and solar cell.For example; With the doping ZnO be the TCO glass of representative in thin-film solar cells such as silica-based, cadmium telluride, copper-indium-galliun-selenium as preceding electrode or back electrode; Increase of the absorption of photoelectricity conversion coating through improving transmittance and scattering of light, and then improve electricity conversion sunshine.
The adulterated zno-based conductive film of boron (B) is widely used in the preparation of thin-film solar cells owing to have the abundant advantage of higher transmittance, good electrical conductivity and raw material sources.People such as
proposes to adopt the adulterated zno-based TCO of low-pressure chemical vapor deposition (LPCVD) technology preparation B film the earliest; Utilize their method to prepare and have the B-ZnO film that the pyramid pattern falls into the high permeability of photosensitiveness, very be suitable as the preceding electrode and the back electrode of thin-film solar cells.U.S. Pat 20080093420 has proposed a kind of LPCVD system and method that is used for the B-ZnO transparent conductive film of suitability for industrialized production.Wherein, The LPCVD system that is adopted comprises assemblies such as loading stage, preheating cavity, process cavity, cooling chamber, relieving platform and glass passback device; Through optimization to processing condition; Prepare the ZnO film that mist degree is 10-25%, this film is used for silicon-based film solar cells, and the stabilization efficiency of its assembly can reach 10%.
UV-light is that a kind of photon energy is between the electromagnetic radiation of 3eV to 124eV; Corresponding wavelength is 10-400nm; In the chemical vapor deposition processes of film, be aided with activation or decomposition that UV-irradiation can promote precursor molecules; Thereby help reducing temperature of reaction, improve speed of reaction, and then improve the thin film physics chemical property.U.S. Pat 20090251884 has been described a kind of method of on polymer substrate, using the adulterated ZnO transparent conductive film of UV assistant chemical vapor deposition technology preparation.They find: do not exist under the light-struck situation of UV, sedimentary ZnO film specific conductivity is lower on polymeric matrix; And under the ultraviolet source irradiation of high voltage mercury lamp, the easier and PVDF matrix bond of the adulterated ZnO film of Al by chemical Vapor deposition process forms obtains higher specific conductivity (1 * 10
-3Ω cm) and higher transmittance (in the transmitance of visible region greater than 90%), yet this invention lays particular emphasis on the method for UV assisted CVD on polymer substrate more, but not mentioned concrete preparation system and equipment.
Summary of the invention
The present invention provides a kind of ultraviolet assisted metalorganic chemical vapor deposition to amass reactive system, and it is simple in structure and be beneficial to demolition and maintenance, can homogeneous radiation, excite chemical reactivity, and reduce temperature of reaction, help preventing that glass from producing deformation under too high temperature.
For solving the problems of the technologies described above, technical scheme of the present invention is following:
A kind of metal organic chemical vapor deposition reactive system; Comprise reaction chamber, be positioned at the spray equipment of reaction chamber inner top and be positioned at the heating unit of reaction chamber inner bottom part, also comprise symmetric quartz window that does not absorb UV luminous energy and corresponding with the quartz window outside ultraviolet source assembly of being located on the wall of chamber, reaction chamber both sides of chamber wall that is fixed in.
Said spray equipment comprises gas distributor and mixed gas spray chamber etc.; Material mixed gas gets into from inlet mouth, arrives through gas distributor and mixes the gas spray chamber, after matrix arrives the heating unit top; Raw mix drenches the sieve aperture ejection of chamber lower surface from mixing gas blowout; Arrive heated matrix surface, carry out chemical reaction, form the TCO film.Said matrix can be glass or organic polymer.
Said quartz window is removably mounted on the wall of chamber from the outside through sealing element, and sealing element can be a silica gel circle etc., is used for completely cutting off outside atmosphere and the intravital process gas in chamber, and disassembly, cleaning are so easily safeguarded, and needn't frequently be opened reaction chamber.If the ultraviolet source assembly is installed in the chamber, then do not need quartz window, but this situation extremely is unfavorable for the clean and maintenance of ultraviolet source assembly.The condition that satisfy quartz window length and position can shine the reaction zone between spray equipment and the heating unit fully for the incident UV-light, and definite saying so shines and mix gas blowout pouring chamber lower surface to the reaction zone between the matrix.Said mixed gas blowout is drenched chamber lower surface and is placed the distance between the body upper surface on the heating unit to be approximately 10mm-200mm.
Said ultraviolet source assembly comprises uv lamp and reflection unit.Said reflection unit comprises reflector and lampshade again, and reflector is generally aluminum alloy material, and lampshade is detachable.
The xsect of said reflector is a parabolic type, and length is not less than the printing opacity width of quartz window.
Printing opacity width and its axis that said uv lamp length is not less than quartz window are positioned on the reflector xsect parabolic focus position, make the light the send parallel reaction zone that evenly incides in the reaction chamber in plate reflection back that is reflected.Because the film forming speed of matrix surface and even its quality depend on the activity of precursor molecules in the reaction zone to a great extent; Therefore receive thermal activation and further be activated at reaction zone from mixing reactant that the gas spray chamber comes out, in matrix surface deposition film forming from the UV-irradiation that ultraviolet source sends.
The wavelength region of the ultraviolet source of said ultraviolet source assembly emission is about 100-400nm, and power is about 500-2000W.
Said reaction chamber is generally cold wall type, and the reaction pressure scope is about 10-10000Pa, and temperature of reaction is less than or equal to 200 ℃.
In addition, the UV-light incident direction is vertical with the matrix transmission direction, and the setting of ultraviolet source assembly does not influence the transmission of glass.
A kind of metal organic chemical vapor deposition reactive system of the present invention; Provided the concrete structure of ultraviolet source component application in the metal organic chemical vapor deposition reaction, the while is simple in structure and be beneficial to demolition and maintenance, through in the reaction cavity both sides ultraviolet subsystem being set all; Implement the UV uniform irradiation at reaction zone; The chemical reactivity of reaction zone species is excited, surface chemical reaction is taken place under lower temperature more easily, thereby reduce the temperature of reaction of matrix surface; Help not only preventing that glass from producing deformation under too high temperature, also help the energy consumption that reduces in the production process.
Description of drawings
Fig. 1 is a system architecture synoptic diagram of the present invention;
Fig. 2 is the structural representation of ultraviolet source assembly;
Fig. 3 is the right TV structure synoptic diagram of Fig. 2 medium ultraviolet light source assembly.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation.
A kind of metal organic chemical vapor deposition reactive system; As shown in Figure 1; Comprise reaction chamber, be positioned at the spray equipment of reaction chamber inner top and be positioned at the heating unit 10 of reaction chamber inner bottom part, comprise that also the symmetric quartz window of being located on chamber, the reaction chamber both sides wall 11 that does not absorb UV luminous energy 5 and corresponding with quartz window 5 is fixed in the outside ultraviolet source assembly of chamber wall 11.
Spray equipment comprises gas distributor 7 and mixed gas spray chamber 6 etc.; Material mixed gas such as zinc ethyl, borine, water get into from inlet mouth 8, arrive through gas distributor 7 and mix gas spray chamber 6, after matrix 9 arrives heating unit 10 tops; Raw mix is from mixing the sieve aperture ejection of gas spray chamber 6 lower surfaces; Arrive heated matrix 9 surfaces, carry out chemical reaction, form the TCO film.Wherein, matrix 9 is a glass.
Quartz window 5 is removably mounted on the chamber wall 11 through the silica gel circle from the outside, is used for completely cutting off outside atmosphere and the intravital process gas in chamber, and disassembly, cleaning are so easily safeguarded, and needn't frequently be opened reaction chamber.The condition that satisfy quartz window 5 length and position can shine the reaction zone between spray equipment and the heating unit 10 fully for the incident UV-light.Mix gas spray chamber 6 lower surfaces and place the distance between matrix 9 upper surfaces on the heating unit 10 to be approximately 50mm.
Like Fig. 2, shown in 3, the ultraviolet source assembly comprises uv lamp 3 and reflection unit etc.Reflection unit comprises reflector 2 and lampshade 1 again, and reflector 2 is an aluminum alloy material, and lampshade 1 is detachable.In addition, also comprise flat 4 in the ultraviolet source assembly.
The xsect of reflector 2 is a parabolic type, and length is not less than the printing opacity width of quartz window 5.
The wavelength region of the ultraviolet source of ultraviolet source assembly emission is about 100-400nm, and power is about 500-2000W.
Claims (10)
1. metal organic chemical vapor deposition reactive system; Comprise reaction chamber, be positioned at the spray equipment of reaction chamber inner top and be positioned at the heating unit of reaction chamber inner bottom part, it is characterized in that also comprising symmetric quartz window and corresponding with the quartz window outside ultraviolet source assembly of being located on the wall of chamber, reaction chamber both sides of chamber wall that is fixed in.
2. metal organic chemical vapor deposition reactive system according to claim 1 is characterized in that said quartz window is removably mounted on the wall of chamber from the outside through sealing element; The condition that satisfy quartz window length and position can shine the reaction zone between spray equipment and the heating unit fully for the incident UV-light.
3. metal organic chemical vapor deposition reactive system according to claim 1 is characterized in that said ultraviolet source assembly comprises uv lamp and reflection unit.
4. metal organic chemical vapor deposition reactive system according to claim 3 is characterized in that said reflection unit comprises reflector and lampshade.
5. metal organic chemical vapor deposition reactive system according to claim 4, the xsect that it is characterized in that said reflector is a parabolic type, length is not less than the printing opacity width of quartz window.
6. according to any described metal organic chemical vapor deposition reactive system among the claim 3-5, it is characterized in that said uv lamp axis is positioned on the reflector xsect parabolic focus position; Uv lamp length is not less than the printing opacity width of quartz window.
7. metal organic chemical vapor deposition reactive system according to claim 1 is characterized in that said spray equipment comprises gas distributor and mixed gas spray chamber.
8. metal organic chemical vapor deposition reactive system according to claim 7 is characterized in that said mixed gas blowout is drenched chamber lower surface and placed the distance between the body upper surface on the heating unit is 10mm-200mm.
9. metal organic chemical vapor deposition reactive system according to claim 1 is characterized in that the wavelength region of the ultraviolet source of said ultraviolet source assembly emission is 100-400nm, and power is 500-2000W.
10. metal organic chemical vapor deposition reactive system according to claim 1 is characterized in that said reaction chamber is a cold wall type, and the reaction pressure scope is 10-10000Pa, and temperature of reaction is less than or equal to 200 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101279022A CN102618847A (en) | 2012-04-26 | 2012-04-26 | Metal organic chemical vapor deposition reaction system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101279022A CN102618847A (en) | 2012-04-26 | 2012-04-26 | Metal organic chemical vapor deposition reaction system |
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| CN102618847A true CN102618847A (en) | 2012-08-01 |
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| CN2012101279022A Pending CN102618847A (en) | 2012-04-26 | 2012-04-26 | Metal organic chemical vapor deposition reaction system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115466939A (en) * | 2022-10-10 | 2022-12-13 | 中国科学院上海微系统与信息技术研究所 | Light modulation chemical vapor deposition device and method for modulating film growth temperature by using same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051748A (en) * | 1973-09-07 | 1975-05-08 | ||
| EP0334374A2 (en) * | 1988-03-24 | 1989-09-27 | Mitsubishi Materials Corporation | Process of forming a superconductive wiring strip in low temperature ambient |
| CN1798618A (en) * | 2003-06-05 | 2006-07-05 | 美国超能公司 | Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
| CN102899638A (en) * | 2012-09-27 | 2013-01-30 | 电子科技大学 | Gas spray head device for photo-assisted metal metallorganics chemical vapor deposition |
-
2012
- 2012-04-26 CN CN2012101279022A patent/CN102618847A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051748A (en) * | 1973-09-07 | 1975-05-08 | ||
| EP0334374A2 (en) * | 1988-03-24 | 1989-09-27 | Mitsubishi Materials Corporation | Process of forming a superconductive wiring strip in low temperature ambient |
| CN1798618A (en) * | 2003-06-05 | 2006-07-05 | 美国超能公司 | Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system |
| CN102899638A (en) * | 2012-09-27 | 2013-01-30 | 电子科技大学 | Gas spray head device for photo-assisted metal metallorganics chemical vapor deposition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115466939A (en) * | 2022-10-10 | 2022-12-13 | 中国科学院上海微系统与信息技术研究所 | Light modulation chemical vapor deposition device and method for modulating film growth temperature by using same |
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Owner name: BEIJING HANNENG CHUANGYU TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HANERGY TECHNOLOGY CO., LTD. Effective date: 20130911 |
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Effective date of registration: 20130911 Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Applicant after: Beijing Hanneng Chuangyu Technology Co., Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Applicant before: Hanergy Technology Co., Ltd. |
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