CN102615738A

CN102615738A - Process for separating metal layers from nonconductive substrate by high-voltage discharge

Info

Publication number: CN102615738A
Application number: CN2012101007530A
Authority: CN
Inventors: 魏冠然; 王天安
Original assignee: Individual
Current assignee: Individual
Priority date: 2012-04-09
Filing date: 2012-04-09
Publication date: 2012-08-01

Abstract

The invention relates to a process for separating metal layers from a nonconductive substrate by high-voltage discharge, which is characterized in that the surface of the metal thin layers of the nonconductive substrate is subjected to high-voltage discharge. The process has the advantages that the process of removing the metal thin layers on the nonconductive substrate is a physical process and has no company of chemical reaction. Therefore, the process avoids secondary pollution. Separating degree is in proportion to separating time, so that adjustment of engineering parameters is convenient. The process (a reaction rate equation is needed in the chemical treatment, so parameters troublesome to adjust) is low in energy consumption and low in operation cost. Taking optical disks as an example, chemical treatment expends about 500 yuan/t. treatment cost calculated according to experiment data of the process is not more than 100 yuan/t. The process requires no chemical material or sewage drainage requirement but electric energy, so that application of the process to engineering is insusceptible to geographic factors.

Description

A kind of electrion separates the technology of thin metal layer on the non-conductive matrix

Technical field

The present invention relates to the technology that a kind of electrion separates thin metal layer on the non-conductive matrix.

Background technology

At present along with informationalized arrival; Increasing electronic product gets into life, and the thing followed is that the waste electronic product of a large amount of update becomes reluctant electronic waste, because in these electronic wastes; It much is the integrated circuit base plate that contains metal, noble metal; The surface is coated with the working of plastics of thin metal layer and a large amount of CDs that contains matcoveredn and metallic reflector, as realizing environmental protection, and the then just recovery recycling of electronic waste 100%.But carry out when handling above-mentioned discarded object, the most headachy problem is a separating metal thin layer how.General employing is chemical method now; As when handling CD; Earlier CD is carried out fragmentation, drop into acid solution (mainly being nitric acid) and soak, the protective layer of optical disc surface and metallic reflector are promptly dissolved behind the certain hour; After PC (Merlon) the matrix taking-up washing with CD, can be used for reproducing grain and produce a PC raw material.Though on reclaiming, regarded the recovery of the makrolon material of CD as; But its secondary pollution that causes is very big; Utilize strong acid to reclaim simultaneously, can corrode CD PC matrix, make that the PC reclaimed materials is of low quality; Domestic optical disc process technology all adopts chemical method at present, causes many local environmental pollutions that produce.It two also has and adopts the mechanical grinding method, and this method is only applicable to complete CD disc, polishes off through the protective layer and the metallic reflector of emery wheel with the CD panel surface, and left is exactly the PC matrix of granulation to be recycled.But it is only applicable to complete CD disc, and bruting process is big to the PC matrix loss of CD, and the rate of recovery is low; Can the part metals reflecting layer be pressed in the PC matrix in the bruting process; Influence PC and reclaim quality, only there is correlative study in the mechanical grinding method at present, and practical applications is not arranged as yet.At present many in addition recyclings that also has the ABS plastic plated item also only limit to chemical method; The same with aforesaid CD chemical method; Because of using strong acid, secondary pollution is very big, and strong acid can corrode the ABS matrix; Make that the ABS reclaimed materials is of low quality, and chemical method is also to be the ABS plated item recycling technology of domestic unique research at present and application.Therefore at present the chemical method that only limits to have secondary pollution for the offal treatment that contains the non-conductive matrix of thin metal layer reclaims, and is a big obstacle of current green recycling economy, demands developing the processing method that makes new advances urgently to solve present problem.

Summary of the invention

The objective of the invention is to solve in the prior art and thin metal layer on the non-conductive matrix is separated existing the problems referred to above, provide a kind of electrion to separate the technology of thin metal layer on the non-conductive matrix with chemical method.The present invention designs the technology that a kind of electrion separates thin metal layer on the non-conductive matrix, it is characterized in that: electrion is carried out on the thin metal layer surface to non-conductive matrix.It is characterized in that: the end at the thin metal layer of non-conductive matrix is provided with high voltage discharge electrode, at the other end of the thin metal layer of non-conductive matrix earthing pole is set, and high voltage discharge electrode connects high voltage source.It is characterized in that: the non-conductive matrix that contains thin metal layer of crushed granular is passed through between two parallel poles, and an electrode is the high voltage discharge electrode that connects high voltage source, and another root electrode is the earthing pole of ground connection.It is characterized in that: when the thin metal layer of complete CD-ROM CD is separated, at the center high voltage discharge electrode is set, annular earthing pole is set in the outer ring, the discharge voltage of the high voltage source that is connect is 60 ~ 80kV, electric current 1-3mA, discharge time 8 ~ 12s.It is characterized in that: to the non-conductive matrix fragment that contains metal coating (like the ABS plated item; When thin metal layer CD fragment etc.) separates; The discharge voltage of the high voltage source that high-voltage discharging electrode connect of parallel pole is polar plate spacing (cm) * 10kV, electric current 5-20mA, discharge time 8 ~ 12s.Advantage of the present invention is that the process of thin metal layer on the non-conductive matrix of separation is a physical process, without chemical reaction.Therefore this technology does not produce secondary pollution.Separation degree and time are proportional, are convenient to engineering parameter and regulate.The energy consumption of (chemical Treatment will be considered reaction rate equation, and parameter regulation is loaded down with trivial details) this technology is lower, and operating cost is cheap.With the CD is example, about 500 yuan/ton of chemical Treatment expense, and the experimental data of this technology infers that the disposal cost that is no more than 100 yuan/ton.This technology only need be used electric energy, need not industrial chemicals, blowdown demand also useless.Therefore practical applications does not receive geographical factor affecting.

Description of drawings

Fig. 1 is the structural representation of a processes complete CD of the present invention, and Fig. 2 is one of the present invention and handles the structural representation of pulverizing CD.

Below in conjunction with accompanying drawing and construction embodiment the present invention is made detailed operation instruction.

The specific embodiment

A kind of electrion separates the technology of thin metal layer on the non-conductive matrix, it is characterized in that: electrion is carried out on the thin metal layer surface to non-conductive matrix.It is characterized in that: the end at the thin metal layer of non-conductive matrix is provided with high voltage discharge electrode, at the other end of the thin metal layer of non-conductive matrix earthing pole is set, and high voltage discharge electrode connects high voltage source.It is characterized in that: the non-conductive matrix that contains thin metal layer of crushed granular is passed through between two parallel poles, and an electrode is the high voltage discharge electrode that connects high voltage source, and another root electrode is the earthing pole of ground connection.It is characterized in that: when the thin metal layer of complete CD-ROM CD is separated, at the center high voltage discharge electrode is set, annular earthing pole is set in the outer ring, the discharge voltage of the high voltage source that is connect is 60 ~ 80kV, electric current 1-3mA, discharge time 8 ~ 12s.It is characterized in that: to the non-conductive matrix fragment that contains metal coating (like the ABS plated item; When thin metal layer CD fragment etc.) separates; The discharge voltage of the high voltage source that high-voltage discharging electrode connect of parallel pole is polar plate spacing (cm) * 10kV, electric current 5-20mA, discharge time 8 ~ 12s.

For the method for processes complete CD shown in Figure 1, CD 1 is placed in the annular electrode 2, central electrode 3 is a discharge electrode, the annular electrode of border is an earthing pole.Discharge voltage 60 ~ the 80kV that adopts, electric current 1-3mA, discharge time 8 ~ 12s.The protective layer of general CD-ROM optical disc surface and metallic reflector are just peeled off fully and are come off.Above-mentioned technological parameter carries out actual test adjusting according to the brand and the type of CD.When electric shock is peeled off, can dry at optical disc surface, the carried away by air movement of generation is peeled off protective layer and the metallic reflector fragment that splits away off.Electric shock finishes, and what stay in the rear electrode circle is the PC matrix, by carried away by air movement and what reclaim is the mixing fragment of protective layer and metallic reflector.The mixing fragment of protective layer that reclaims and metallic reflector can carry out the high-voltage electric shock Separation and Recovery again.

For the method for processing pulverizing CD shown in Figure 2, with CD-ROM CD fragment 4 (also can be VCD, DVD, BD etc., the protective layer under ABS plated item, CD come off and the mixing fragment of metallic reflector).

Flow process: process object is carried out Mechanical Crushing, carve according to recycle object differently, the fragmentation of should classifying such as being that the CD of target should be divided into one type of fragmentation to reclaim PC, and is that the plated item of target should be divided into another kind of fragmentation to reclaim ABS.Under the drive of certain speed air-flow; Particle is to two parallel discharge plate 5 intermediary movementses, discharge of two pole plates, a ground connection; Particle is through parallel discharge plate centre the time; Promptly peeled off by high-voltage electric shock and be that conductive metal powder and non-conductive matrix, high-voltage electric shock peel off the conductive metal powder that finishes and non-conductive substrate mixture through cyclone separator, methods such as electrostatic field sorting are separated.Technological parameter is by parallel discharge plate spacing, the unit interval treating capacity, the decision of factors such as the characteristic of process object, general discharge voltage is: polar plate spacing (cm) * 10kV, electric current 5-20mA, discharge time 8 ~ 12s.

Except that above-mentioned to the separating the embodiment of CD; Separation method of the present invention is being used for having on the non-conductive matrix structure article that cover thin metal layer equally with CD, like the ABS plated item, and the non-conductive plated item of NCVM etc.; Certainly also need be when actual treatment according to the used material and the thickness of properties of materials and electrodeposited coating; And, take all factors into consideration the set discharge voltage of technology of the present invention, electric current and discharge time with reference to electroplating technique, obtain the optimal separation effect.

Claims

1. technology that electrion separates thin metal layer on the non-conductive matrix, it is characterized in that: electrion is carried out on the thin metal layer surface to non-conductive matrix.

2. the technology of separating thin metal layer on the non-conductive matrix by the described a kind of electrion of claim 1; It is characterized in that: the end at the thin metal layer of non-conductive matrix is provided with high voltage discharge electrode; The other end at the thin metal layer of non-conductive matrix is provided with earthing pole, and high voltage discharge electrode connects high voltage source.

3. the technology of separating thin metal layer on the non-conductive matrix by the described a kind of electrion of claim 1; It is characterized in that: the non-conductive matrix that contains thin metal layer of crushed granular is passed through between two parallel poles; An electrode is the high voltage discharge electrode that connects high voltage source, and another root electrode is the earthing pole of ground connection.

4. the technology of separating thin metal layer on the non-conductive matrix by the described a kind of electrion of claim 2; It is characterized in that: when the thin metal layer of complete CD-ROM CD is separated; At the center high voltage discharge electrode is set, annular earthing pole is set in the outer ring, the discharge voltage of the high voltage source that is connect is 60 ~ 80kV; Electric current 1-3mA, discharge time 8 ~ 12s.

5. the technology of separating thin metal layer on the non-conductive matrix by the described a kind of electrion of claim 3; It is characterized in that: to the non-conductive matrix fragment that contains metal coating (like the ABS plated item; When thin metal layer CD fragment etc.) separates; The discharge voltage of the high voltage source that high-voltage discharging electrode connect of parallel pole is polar plate spacing (cm) * 10kV, electric current 5-20mA, discharge time 8 ~ 12s.