CN102614897A - 一种提高硫化锌材料光催化活性的退火处理方法 - Google Patents

一种提高硫化锌材料光催化活性的退火处理方法 Download PDF

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CN102614897A
CN102614897A CN2012100636450A CN201210063645A CN102614897A CN 102614897 A CN102614897 A CN 102614897A CN 2012100636450 A CN2012100636450 A CN 2012100636450A CN 201210063645 A CN201210063645 A CN 201210063645A CN 102614897 A CN102614897 A CN 102614897A
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zns
annealing
annealing treatment
zinc sulfide
treatment method
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黄丰
洪杨平
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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Abstract

本发明公开了一种提高硫化锌材料光催化产氢活性的退火处理方法。本发明提供了S气氛退火处理ZnS纳米材料,由于水热合成的ZnS纳米材料含有较多S空位缺陷,利用氢氧焰将ZnS材料和S粉密封在真空石英管中,加热一定温度退火,使S原子填充到S空位中去,消除材料的晶格内部缺陷。本方法极大地提高了ZnS材料的光催化产氢活性,对ZnS材料在光催化的实际应用能产生重要的影响。

Description

一种提高硫化锌材料光催化活性的退火处理方法
技术领域
本发明涉及在S气氛条件下对ZnS材料进行退火处理以提高其光催化产氢活性。
背景技术
ZnS是一种直接带隙的II-VI族宽禁带半导体,理论上具有很强的光生载流子产生效率。研究表明,ZnS纳米材料是一类有潜在商业应用前景的光催化剂,可以用于利用光能在水中制氢(I.Tsuji,J.Am.Chem.Soc.,2004,126,13406-13413)、醛及衍生物的光还原(S.Yanagida,Chem.Lett.,1985,1,141-144)、卤代苯脱卤(S.Kohtani,Chem.Lett.,2005,34,1056-1057)等方面。
一般说来,作为一种直接宽带隙半导体材料,ZnS的光生载流子产生速率理论上要远远高于TiO2,因此,理论上ZnS应有和商用TiO2可比拟的光催化效率。例如,在降解污染物分子的研究方面,一些研究表明,某些特殊形貌的ZnS纳米材料,的确显示出比TiO2更好的光催化降解活性。另外,在ZnS材料光催化产氢方面,一些研究也注意到即使没有负载Pt,ZnS也能显示很好的紫外光催化产氢活性。此外,基于ZnS本身只能对紫外光响应(带隙3.5ev),许多学者做了不少有益的尝试从而使得ZnS得以在可见光区域响应,来提高其光催化产氢效率(A.Kudo and M.Sekizawa,Catal Lett,1999,58,241-243;J.Zhang,J.G.Yu,Y.M.Zhang,Q.Li and J.R.Gong,Nano.Lett.,2011,11,4774;H.Chan Youn,The Journal of Physical Chemistry,1988,92,6320-6327)。然而,在当前的ZnS光催化制氢的研究中,对材料的晶格完整度因素如何影响其光催化制氢效率却鲜有报道。而从本质上说,材料的结晶度的好坏会影响电子和空穴在材料中的迁移和复合,从而对光生电子和空穴的有效分离,乃至于最终的产氢效率产生重要影响。因此研究结晶度对ZnS半导体材料光催化产氢效率的影响及影响规律,不仅有助于从基础科研角度深入理解ZnS半导体材料光催化制氢的机制,而且对如何通过材料的设计和调控,开发具有高产氢活性的ZnS材料具有重大的实际意义。
发明内容
本发明的目的在于提供一种对ZnS材料的退火处理方法提高其光催化产氢活性。
本发明采用如下技术方案:一种硫化锌纳米材料退火处理的方法,退火过程采用硫气氛。所述的退火过程包括如下步骤:将硫化锌颗粒和硫粉真空密封,加热速率为每小时100℃,退火温度在150℃到500℃之间,退火时间1小时到10小时。
本发明的原理为:通常认为光生载流子(电子和空穴)容易被各种形式的缺陷(晶格内部缺陷和表面缺陷)所捕获,导致光生载流子从内部扩散到表面的几率下降,影响光催化反应的进行。表面缺陷通常可以通过表面包裹剂钝化消除,而内部缺陷却很难。通过对材料进行适当温度的退火可以在不改变材料化学成分的前提下促进材料的晶格原子的调整,减少其缺陷。ZnS材料由于其晶格能较低(-3319kJ/mol-1),容易形成孪晶、堆垛层错、S空位缺陷等,通过对其进行S气氛退火处理,不但可以促进其晶格原子的调整,同时可以通过补充S原子达到消除S空穴缺陷的目的。材料内部缺陷的减少有利于提高其结晶度,降低光生电子空穴对的复合,进而提高材料的光催化活性。
本发明的有益效果:通过在S气氛条件下对ZnS材料退火可以有效去除材料晶格内部的缺陷。通过测定发现150℃退火温度下能够得到较好的材料结晶度,进一步对其进行光催化制氢实验,发现相比未退火处理样品材料的光催化产氢活性有了明显的提高。
具体实施方式
实施例1:
100mgS粉和150mgZnS纳米颗粒分装在两个不同的干净小石英管(一端密封)中,再把两个小石英管套在一个大的石英管(一端密封)中,对此石英管抽真空至管中压强降至10-1Pa以下,再用氢氧焰密封。加热密封好的石英管至150℃,维持在此温度下退火1h、2h、3h。退火后的样品尺寸通过谢乐公式计算,比表面积通过比表面积吸附仪(ASAP 2020)测定,光催化产氢量用气相色谱仪(GC-14C,Shimadzu)检测,结果见表1。可以看到相比未退火样品,S气氛下150℃退火3h的样品光催化产氢活性提高了将近50%。
表1S气氛下150℃退火0-3h样品的尺寸、比表面积和产氢活性
  样品   退火条件   尺寸(nm)  比表面积(m2g-1) 产氢速率(μmolh-1g-1)
  S0   未退火   7.8   100.2   1230
  S150-1h   150℃1h   7.9   96.9   1450
  S150-2h   150℃2h   8.0   94.8   1723
  S150-3h   150℃3h   8.0   95.6   1399
实施例2:
150mgZnS纳米颗粒装在石英管(一端密封)中,对此石英管抽真空至管中压强降至10-1Pa以下,再用氢氧焰密封。加热密封好的石英管至150℃,维持在此温度下退火1h、2h、3h。退火后的样品尺寸通过谢乐公式计算,比表面积通过比表面积吸附仪(ASAP 2020)测定,光催化产氢量用气相色谱仪(GC-14C,Shimadzu)检测,结果见表2。可以看到相比未退火样品,真空气氛下150℃退火3h的样品光催化产氢活性略有提高。
表2真空气氛下150℃退火0-3h样品的尺寸、比表面积和产氢活性
  样品   退火条件   尺寸(nm)  比表面积(m2g-1) 产氢速率(μmolh-1g-1)
  S0   未退火   7.8   100.2   1230
  S150-1h   150℃1h   7.7   98.9   1240
  S150-2h   150℃2h   8.0   98.8   1238
  S150-3h   150℃3h   8.1   96.6   1243

Claims (2)

1.一种硫化锌纳米材料退火处理的方法,其特征在于:退火过程采用硫气氛。
2.如权利要求1所述的硫化锌纳米材料退火处理的方法,其特征在于:所述的退火过程包括如下步骤:将硫化锌颗粒和硫粉真空密封,加热速率为每小时100℃,退火温度在150℃到500℃之间,退火时间1小时到10小时。 
CN2012100636450A 2012-03-12 2012-03-12 一种提高硫化锌材料光催化活性的退火处理方法 Pending CN102614897A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107265495A (zh) * 2017-07-20 2017-10-20 济南大学 非模板法制备硫化锌微球
CN110003892A (zh) * 2019-05-15 2019-07-12 齐鲁工业大学 一种修饰的溶胶凝胶法制备CdS/ZnS量子点及其光催化析氢应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065994A2 (en) * 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS
CN102181847A (zh) * 2011-04-14 2011-09-14 山东大学 一种醇热沉积铜锌锡硫薄膜的方法
CN102251235A (zh) * 2011-07-07 2011-11-23 中南大学 一种铜锌锡硫薄膜的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065994A2 (en) * 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company CZTS/Se PRECURSOR INKS AND METHODS FOR PREPARING CZTS/Se THIN FILMS AND CZTS/Se-BASED PHOTOVOLTAIC CELLS
CN102668021A (zh) * 2009-11-25 2012-09-12 E·I·内穆尔杜邦公司 CZTS/Se前体油墨及用于制备CZTS/Se薄膜和基于CZTS/Se的光伏电池的方法
CN102181847A (zh) * 2011-04-14 2011-09-14 山东大学 一种醇热沉积铜锌锡硫薄膜的方法
CN102251235A (zh) * 2011-07-07 2011-11-23 中南大学 一种铜锌锡硫薄膜的制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
曹广军等: "氧化锌薄膜热退火特性的研究", 《压电与声光》 *
胡益培等: "ZnS纳米材料的光致发光和光催化性能", 《扬州大学学报(自然科学版)》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107265495A (zh) * 2017-07-20 2017-10-20 济南大学 非模板法制备硫化锌微球
CN110003892A (zh) * 2019-05-15 2019-07-12 齐鲁工业大学 一种修饰的溶胶凝胶法制备CdS/ZnS量子点及其光催化析氢应用
CN110003892B (zh) * 2019-05-15 2022-03-04 齐鲁工业大学 一种修饰的溶胶凝胶法制备CdS/ZnS量子点及其光催化析氢应用

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