CN102610555A - Nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified - Google Patents
Nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified Download PDFInfo
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- CN102610555A CN102610555A CN2011102664431A CN201110266443A CN102610555A CN 102610555 A CN102610555 A CN 102610555A CN 2011102664431 A CN2011102664431 A CN 2011102664431A CN 201110266443 A CN201110266443 A CN 201110266443A CN 102610555 A CN102610555 A CN 102610555A
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Abstract
The invention discloses a nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified, which is improved based on the original silicon carbide thin film preparation technology. Hydrocarbon replaces ammonia, and nitrogen and the like act as reaction gases, thus a nitrogen-free silicon carbide thin film can be prepared, the danger for generating photoresist modification in the subsequent process for being contacted with the photoresist (optical resist) is prevented, further the consistency of semiconductor interconnection critical dimension is ensured effectively, meanwhile, the quality of the deposited silicon carbide thin film is improved, and the technology process is simple and is easy to control.
Description
Technical field
The present invention relates to the semiconductor fabrication technical field, relate to a kind of no fire sand thin-film technique of avoiding the photoresistance sex change specifically.
Background technology
In integrated circuit technology, the silicon dioxide that thermal stability, anti-moisture resistance are arranged is the important dielectric material that metal interconnected circuit chien shih is used always.In the past, the main book metallic aluminium of the material of interconnection line in the chip, still; Along with the direction of semiconductor element towards microminiaturization develops, the number of interconnection line also increases thereupon in the chip, causes RC to postpone (RC Delay; R is meant resistance; C is meant electric capacity) generation, delayed the transmission speed of signal, and then influenced the performance of chip.
Postpone in order to reduce RC in the prior art, develop into and use the metallic copper that can effectively reduce conductor resistance to replace the material of metallic aluminium as interconnection line.And therefore advantage such as metallic copper also has the fusing point height, and resistance coefficient is lower, has obtained using widely in practice.Simultaneously, the material that uses low-k (Low k, wherein, k is the tolerance of the dielectric constant of material) is to reduce dead resistance.But; Because the material of low-k and the adhesiveness of copper interconnecting line are relatively poor; Generally between low-k and copper interconnecting line, use one deck carborundum films layer in the practice; To have good adhesiveness between the material that guarantees low-k and the copper interconnecting line, simultaneously, silica membrane also can be used as the diffusion impervious layer and the etching stop layer of copper.Wherein, The traditional handicraft of the formation of above-mentioned carborundum films is following: at first; In the substrate that contains low dielectric constant films and copper interconnecting line with ammonia and nitrogen preliminary treatment, to remove the lip-deep Cu oxide of copper interconnecting line, then; Use ethyl-trimethyl silane (Trimethylsilane-3MS) or tetramethylsilane (Tetramethylsilane-4MS) and ammonia as reacting gas again, utilize chemical vapour deposition technique in described substrate, to form one deck carborundum diaphragm.Because employed in the above-mentioned processing step is to contain reacting gas such as ammonia nitrogen gas to handle substrate; Cause in the carborundum films of deposit and contain certain nitrogen element; Therefore; In follow-up and the process that contacts photoresistance, may produce the danger of photoresistance sex change, the photoresistance sex change then can have a strong impact on the consistency of semiconductor interconnect critical size in follow-up processing procedure.
Summary of the invention
The object of the present invention is to provide a kind of carborundum films technology of avoiding the photoresistance sex change, it can effectively avoid traditional nitrogenous photoresistance sex change problem that carborundum films brought, and improves the quality of carborundum films, and technical process is simple and easy to control.
For solving above-mentioned purpose, technical scheme provided by the present invention is:
A kind of carborundum films technology of avoiding the photoresistance distortion wherein, comprises the steps:
Step S1: be formed with copper interconnecting line in the low dielectric constant films that in a substrate, is deposited;
Step S2: with the surperficial Cu oxide that is produced of the mixture gas treatment interconnection line that includes hydrocarbon and hydrogen;
Step S3: the hybrid reaction gas with including hydrocarbon and silane deposits one deck carborundum films on said low dielectric constant films, and carborundum films covers on the copper interconnecting line simultaneously.
The above-mentioned carborundum films technology of avoiding the photoresistance sex change wherein, deposits one deck carborundum films with chemical vapour deposition technique among the described step S3 in said substrate.
The above-mentioned carborundum films technology of avoiding the photoresistance distortion, wherein, the silane among the said step S3 is ethyl-trimethyl silane.
The above-mentioned carborundum films technology of avoiding the photoresistance distortion, wherein, the silane among the said step S3 is tetramethylsilane.
A kind of no fire sand thin-film technique of avoiding the photoresistance sex change of the present invention is improved on the preparation technology's of original carbonized film basis, replaces ammonia with hydrocarbon; Nitrogen etc. are as reacting gas; Can make the carborundum films of no nitrogen, avoid in follow-up and process that photoresistance (photoresist) contacts, producing the danger of photoresistance sex change; And then effectively guaranteed the consistency of semiconductor interconnect critical size; Simultaneously, improved the quality of the carborundum films of institute's deposit, technical process is simple and easy to control.
Description of drawings
Fig. 1 is a kind of flow chart of avoiding the no fire sand thin-film technique of photoresistance sex change of the present invention;
Fig. 2 a to 2c is of the present invention a kind of cross-sectional view of avoiding the no fire sand thin-film technique of photoresistance sex change shown in Figure 1.
Embodiment
Come a kind of no fire sand thin-film technique of photoresistance sex change of avoiding of the present invention is done explanation in further detail below in conjunction with Figure of description and embodiment.
Just be based on existing carborundum films technology and proposing a kind of various execution modes of avoiding the no fire sand thin-film technique of photoresistance sex change of the present invention.
Shown in Fig. 1 and Fig. 2 a-2c, a kind of carborundum films technology of avoiding the photoresistance distortion of the present invention comprises the steps:
Step S1: provide one include low dielectric constant films 110 and copper interconnecting line 120 substrate 130; Described in background technology; Because low dielectric constant films 110 is as effectively can effectively reducing parasitic capacitance; And copper can effectively reduce dead resistance as the material of interconnection line; Therefore, usually low dielectric constant films 110 is applied between the copper interconnecting line 120 as insulating material, with effective minimizing RC delay in the practice.But, because low dielectric constant films 110 materials are loose, therefore; Adhesiveness between itself and the copper interconnecting line 120 is relatively poor; Therefore, need follow-up technology between low dielectric constant films 110 and copper interconnecting line 120, to cover one deck carborundum films 140, so that keep good adhesiveness between low dielectric constant films 110 and the copper interconnecting line 120; Simultaneously, the silica membrane of institute's deposit is also at diffusion impervious layer that can be used as copper and etching stop layer.
Step S2: with the mixture gas treatment copper interconnecting line 120 that includes hydrocarbon and hydrogen, to remove the Cu oxide that forms on the copper interconnecting line 120; Wherein, for the high-quality carborundum films 140 of deposit one deck on the low dielectric constant films that includes copper interconnecting line 120 110, at first should remove formed Cu oxide on the copper interconnecting line 120.Wherein, use hydrocarbon (C in the present invention
XH
Y) and hydrogen as reacting gas, to remove Cu oxide; Simultaneously, because in this pre-treatment step, because the gas that does not use any nitrogenous element ammonia (NH for example
3) etc., therefore, can not contain any nitrogen element in the substrate 130.
Step S3: the hybrid reaction gas with including hydrocarbon and silane deposits one deck carborundum films 140 on low dielectric constant films 110, simultaneously, and carborundum films 140 covering copper interconnection lines 120.Wherein, Owing to all have good adhesiveness between carborundum films 140 and low dielectric constant films 110 and the copper interconnecting line 120; Therefore, the reacting gas with chemical vapour deposition technique deposit carborundum films 140 in substrate 130 comprises hydrocarbon (C in this step
XH
Y) and ethyl-trimethyl silane/tetramethylsilane.And, owing to also do not comprise the gas of any nitrogenous element in this step, therefore, in the carborundum films 140 of final institute deposit any nitrogen element also can not appear.
In sum, a kind of no fire sand thin-film technique of avoiding the photoresistance sex change of the present invention is improved on the preparation technology's of original carbonized film basis; Replace ammonia with hydrocarbon, nitrogen etc. can make the carborundum films of no nitrogen as reacting gas; Avoided in follow-up and process that photoresistance (photoresist) contacts; Produce the danger of photoresistance sex change, and then effectively guaranteed the consistency of semiconductor interconnect critical size, simultaneously; Improved the quality of the carborundum films of institute's deposit, technical process is simple and easy to control.
Should be pointed out that foregoing is enumerating of specific embodiment of the present invention, equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; And above-mentioned specific embodiment is not to be used for limiting practical range of the present invention, and promptly all equivalent transformation and modifications of doing according to content of the patent of the present invention all fall into protection scope of the present invention.
Claims (4)
1. a carborundum films technology of avoiding the photoresistance distortion is characterized in that, comprises the steps:
Step S1: be formed with copper interconnecting line in the low dielectric constant films that in a substrate, is deposited;
Step S2: with the surperficial Cu oxide that is produced of the mixture gas treatment interconnection line that includes hydrocarbon and hydrogen;
Step S3: the hybrid reaction gas with including hydrocarbon and silane deposits one deck carborundum films on said low dielectric constant films, and carborundum films covers on the copper interconnecting line simultaneously.
2. the carborundum films technology of avoiding the photoresistance sex change as claimed in claim 1 is characterized in that, in said substrate, deposits one deck carborundum films with chemical vapour deposition technique among the described step S3.
3. the carborundum films technology of avoiding the photoresistance distortion as claimed in claim 1 is characterized in that the silane among the said step S3 is ethyl-trimethyl silane.
4. the carborundum films technology of avoiding the photoresistance distortion as claimed in claim 1 is characterized in that the silane among the said step S3 is tetramethylsilane.
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| CN2011102664431A CN102610555A (en) | 2011-09-09 | 2011-09-09 | Nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified |
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| CN2011102664431A CN102610555A (en) | 2011-09-09 | 2011-09-09 | Nitrogen-free silicon carbide thin film technology for preventing photoresist from being modified |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333248B1 (en) * | 1999-11-11 | 2001-12-25 | Nec Corporation | Method of fabricating a semiconductor device |
| US20040087139A1 (en) * | 2002-11-04 | 2004-05-06 | Applied Materials, Inc. | Nitrogen-free antireflective coating for use with photolithographic patterning |
| US20040084680A1 (en) * | 2002-10-31 | 2004-05-06 | Hartmut Ruelke | Barrier layer for a copper metallization layer including a low k dielectric |
| US20070264843A1 (en) * | 2006-05-09 | 2007-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation and applications of nitrogen-free silicon carbide in semiconductor manufacturing |
| CN101419915A (en) * | 2007-10-09 | 2009-04-29 | 应用材料股份有限公司 | Methods to obtain low k dielectric barrier with superior etch resistivity |
-
2011
- 2011-09-09 CN CN2011102664431A patent/CN102610555A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333248B1 (en) * | 1999-11-11 | 2001-12-25 | Nec Corporation | Method of fabricating a semiconductor device |
| US20040084680A1 (en) * | 2002-10-31 | 2004-05-06 | Hartmut Ruelke | Barrier layer for a copper metallization layer including a low k dielectric |
| US20040087139A1 (en) * | 2002-11-04 | 2004-05-06 | Applied Materials, Inc. | Nitrogen-free antireflective coating for use with photolithographic patterning |
| US20070264843A1 (en) * | 2006-05-09 | 2007-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation and applications of nitrogen-free silicon carbide in semiconductor manufacturing |
| CN101419915A (en) * | 2007-10-09 | 2009-04-29 | 应用材料股份有限公司 | Methods to obtain low k dielectric barrier with superior etch resistivity |
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Application publication date: 20120725 |