CN102605429B - Method for preparing one-dimensional nanowires by tin whisker growth - Google Patents
Method for preparing one-dimensional nanowires by tin whisker growth Download PDFInfo
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- CN102605429B CN102605429B CN201210068606.XA CN201210068606A CN102605429B CN 102605429 B CN102605429 B CN 102605429B CN 201210068606 A CN201210068606 A CN 201210068606A CN 102605429 B CN102605429 B CN 102605429B
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Abstract
The invention discloses a method for preparing one-dimensional nanowires by tin whisker growth, which includes: depositing a metal layer on a substrate and forming stripe-like nano-scale thin metal wires by photoetching process; and connecting two ends of each thin metal wire to electrodes, and energizing to promote accelerated growth of whiskers on the metal layer to obtain the one-dimensional nanowires. The diameter and length of the thin nanowires can be controlled effectively, the grown one-dimensional nanowires are even in diameter and directly grown on the substrate, and connection in three-dimensional packaging is facilitated.
Description
Technical field
The present invention relates to micro-electronic manufacturing and nano material manufacture field, concrete ground says it is a kind of method manufacturing one-dimensional nano line.
Technical background
Nano material general reference is by the molecular solid material of size nanoparticle between 0.1 ~ 100nm, comprises nanoparticle, nanofiber, nano thin-film and nanometer blocks of solid.The special construction level that nanoparticle has, impart its much special character and function, as surface effects, quantum size effect, small-size effect, macro quanta tunnel effect, Dielectric confinement effect etc., these special physical propertiess make nano material present much peculiar character and show the performance of some excellence, make it in various fields, particularly there is great using value the aspect such as optics, electricity, magnetics, biology, pottery, chemical industry, medical science, catalysis.Nano material is divided into zero dimension, one dimension, two and three dimensions nano material by yardstick.Monodimension nanometer material comprises nano wire, nanotube etc.
The topmost method of current synthetic metals nano wire is template, and template can regulate and control the pattern of final product very well, and is easy to obtain the consistent nano material array of orientation, but its aftertreatment is more loaded down with trivial details.Also have crystal seed method in addition, the synthetic metals nano wires such as microwave, ultrasonic assistant reduction method, laser radiation method, electrochemical deposition method and hydrothermal method, but these methods are all difficult to the diameter and the length that control nano wire.
Summary of the invention
The invention discloses a kind of method utilizing tin one of the main divisions of the male role in traditional opera length to prepare one-dimensional nano line, accurately can control diameter and the length of nano wire, obtain uniform nanometer fine rule.
Utilize the long method preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera, it is characterized in that, comprise the following steps:
(1) at substrate surface depositing metal layers;
(2) utilize photoetching development and metal level etching process, form many nano level metal fine rules at substrate surface;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule;
(4) zone of oxidation on metal fine surface is removed;
(5) by the two ends receiving electrode energising of metal fine, promote that metal fine surface growth metal whisker obtains one-dimensional metal nano wire.
Further, described step (2) is specially: first at layer on surface of metal spin coating photoresist material, then the mask plate of nano level striped design is adopted to carry out photoetching to it, development obtains many nanoscale lithography glue fine rules again, the metal level beyond substrate surface photoresist material fine rule is fallen in final etching, obtains nano level metal fine rule.
Further, described step (3) is specially: at the whole surperficial spin coating photoresist material of substrate, utilizes litho developing process to remove the photoresist material on metal fine surface.
Further, described metal level is any one in Cd, Sn, Zn, Al or Ag.
Further, also substrate is placed in heating unit before described step (5) energising, after utilizing heating unit to make substrate intensification metal level easily grow the temperature of whisker, then to metal fine insulation energising.
Further, substrate is placed in vacuum environment when being energized by described step (5).
Technique effect of the present invention is embodied in: the present invention mainly make use of the long characteristic of tin one of the main divisions of the male role in traditional opera, and photoetching control tin palpus size and energising are accelerated tin one of the main divisions of the male role in traditional opera length and prepared one-dimensional metal nano wire.Because the nano level fine rule grown out is that one dimension connects, each grain size is identical, so diameter is very even, this is that other are prepared one-dimensional nano line and are beyond one's reach.The diameter of nano wire effectively can be controlled by photoetching process.Not only can promote nanowire growth by step mode, and effectively can also control the length of nano wire.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of naked silicon chip of the present invention;
Fig. 2 is that the present invention deposits and electroplates the schematic diagram adding thick metal layers;
Fig. 3 is the schematic diagram after the present invention's first time photoetching development;
Fig. 4 is the schematic diagram that the present invention erodes bare metal;
Fig. 5 is the schematic diagram after the photoetching of the present invention's second time;
Fig. 6 is the schematic diagram of the 1-dimention nano metal wire obtained after the present invention is energized;
Fig. 7 is surface metal fine rule of the present invention and two ends land pattern schematic diagram.
Embodiment:
Below in conjunction with accompanying drawing, the present invention is elaborated.
Tin must be a kind of monocrystalline whiskers of stanniferous coating surface autonomous growth.At different temperatures, tin must speed of growth difference.Experiment shows, increases to 10 in current density
4a/cm
2time will there is ELECTROMIGRATION PHENOMENON, ELECTROMIGRATION PHENOMENON atom of shape near anode gathers the internal compressive stress adding tin coating, accelerates tin one of the main divisions of the male role in traditional opera long.Experiment finds, also has this phenomenon for metals such as Cd, Zn, Al, Ag.Based on this discovery, the present invention attempts utilizing electromigration to accelerate whisker growth to prepare one-dimensional nano line.
Utilize the long method preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera, comprise the following steps:
(1) first at deposition on substrate thin metal layer, then metal level is thickeied with electroplating technology, as shown in accompanying drawing (1) and (2); Substrate can adopt silicon substrate, gallium arsenide substrate or glass substrate, and metal level is any one in Cd, Sn, Zn, Al or Ag.
(2) at layer on surface of metal spin coating thin photoresist, the mask plate of nano level striped design is utilized to carry out photoetching, development obtains many nanoscale lithography glue fine rules (see figure (3)) again, the metal level beyond substrate surface photoresist material fine rule is fallen in final etching, obtains nano level metal fine rule (see figure (4)); The quantity and spacing of metal fine determines according to the number of nanowires of required preparation;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule, specific implementation is: at the whole surperficial spin coating photoresist material of substrate (see figure (5)), litho developing process is utilized to remove the photoresist material on metal fine surface, as shown in accompanying drawing (6);
(4) remove the zone of oxidation on metal fine surface, for the growth of metal whiskers is removed the obstacles, save time, so far complete sample making;
(5) by the two ends receiving electrode energising of metal fine, promote that metal fine surface growth metal whisker obtains one-dimensional metal nano wire, as shown in accompanying drawing (7).Consider that often kind of the fastest required temperature of metal whisker growth is different, also substrate is placed in heating unit before energising, after utilizing heating unit to make substrate intensification metal level easily grow the temperature of whisker, then to metal fine insulation energising.Also can being in vacuum environment by sample when being energized, avoiding burning on the one hand, the diameter of whisker can be reduced on the other hand to a certain extent.Current density controls the speed of growth of nano wire.
Claims (3)
1. utilize the long method preparing one-dimensional nano line of tin one of the main divisions of the male role in traditional opera, it is characterized in that, comprise the following steps:
(1) at substrate surface depositing metal layers;
(2) utilize photoetching development and metal level etching process, form many nano level metal fine rules at substrate surface;
(3) spin coating photoresist material between substrate surface adjacent metal fine rule;
(4) zone of oxidation on metal fine surface is removed;
(5) by the two ends receiving electrode energising of metal fine, promote that metal fine surface growth metal whisker obtains one-dimensional metal nano wire;
Described step (2) is specially: first at layer on surface of metal spin coating photoresist material, then the mask plate of nano level striped design is adopted to carry out photoetching to it, development obtains many nanoscale lithography glue fine rules again, the metal level beyond substrate surface photoresist material fine rule is fallen in final etching, obtains nano level metal fine rule;
Described step (3) is specially: at the whole surperficial spin coating photoresist material of substrate, utilizes litho developing process to remove the photoresist material on metal fine surface;
Described metal level is any one in Cd, Sn, Zn, Al or Ag.
2. the method utilizing tin one of the main divisions of the male role in traditional opera length to prepare one-dimensional nano line according to claim 1, it is characterized in that, also substrate is placed in heating unit before described step (5) energising, after utilizing heating unit to make substrate intensification metal level easily grow the temperature of whisker, then to metal fine insulation energising.
3. the method utilizing tin one of the main divisions of the male role in traditional opera length to prepare one-dimensional nano line according to claim 1, it is characterized in that, substrate is placed in vacuum environment when being energized by described step (5).
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
| CN101924202A (en) * | 2010-09-08 | 2010-12-22 | 武汉理工大学 | Single nanowire electrochemical device and assembly and in-situ characterization method thereof |
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| US7455757B2 (en) * | 2001-11-30 | 2008-11-25 | The University Of North Carolina At Chapel Hill | Deposition method for nanostructure materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101363721A (en) * | 2008-09-12 | 2009-02-11 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for quickly testing growth of tin crystal whisker |
| CN101924202A (en) * | 2010-09-08 | 2010-12-22 | 武汉理工大学 | Single nanowire electrochemical device and assembly and in-situ characterization method thereof |
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