CN102601723A - Grinding method for semi-conductor device - Google Patents
Grinding method for semi-conductor device Download PDFInfo
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- CN102601723A CN102601723A CN2011100234316A CN201110023431A CN102601723A CN 102601723 A CN102601723 A CN 102601723A CN 2011100234316 A CN2011100234316 A CN 2011100234316A CN 201110023431 A CN201110023431 A CN 201110023431A CN 102601723 A CN102601723 A CN 102601723A
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Abstract
A grinding method for a semi-conductor device comprises the following steps that a grinding pad is arranged, and solid particles generated in the grinding process are arranged on the surface of the grinding pad; a repair wafer is placed on the grinding pad, a polycrystalline silicon layer in contact with the grinding pad is formed on the surface of the repair wafer, and the surface of the polycrystalline silicon layer has a certain roughness; and grinding solution is added on the grinding pad for grinding, and the polycrystalline silicon layer adsorbs the solid particles on the surface of the grinding pad. According to the grinding method, the solid particles filled in a gap between abrasive blocks on the surface of the grinding pad can be fast removed, thereby prolonging the service life of the grinding pad and improving the grinding speed and the grinding quality of the wafer.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly a kind of Ginding process of semiconductor devices.
Background technology
In semiconductor fabrication process,, also corresponding increasingly high to the flatening process requirement of crystal column surface along with the Highgrade integration and the miniaturization of semiconductor devices.In 45 nanometers and following technology, because fixed polishing is that abrasive material is fixed on the grinding pad, and the abrasive material surface pressure processed the concaveconvex shape of rule, make abrasive material be evenly distributed on whole grinding pad surface, therefore can obtain better grinding effect; Therefore fixed polishing replaces the traditional chemical mechanical milling method gradually, comes that crystal column surface is carried out flatening process and makes crystal column surface obtain higher flatness.
The solidified abrasive grinding method; Be that abrasive material and grinding pad are combined; Form the grinding pad that the surface has the array pattern of abrasive material piece; Like the grinding pad of being introduced in the United States Patent (USP) 20020049027, then the solidified abrasive grinding pad is placed on the grinding table, the abradant surface that wafer is placed on the solidified abrasive grinding pad grinds.The process of lapping of existing solidified abrasive grinding method, as shown in Figure 1, input cylinder 1051 is transported to solidified abrasive grinding pad 102 on the grinding table 101 with output roller 1052, and with the wetting solidified abrasive grinding pad of grinding agent 102 surfaces; Wafer 103 is absorbed and fixed on the grinding head 104, and its surface is contacted with solidified abrasive grinding pad 102 surfaces; Start power drive; Grinding table 101 drives the underspin commentaries on classics in the rotation of bearing 100; Wafer 103 also rotates under grinding head 104 drives of rotation, and itself and grinding pad 102 are done relative motion, makes that wafer 103 surfaces abrasive material pieces continuous and grinding pad 102 surfaces rub and quilt is ground.
As shown in Figure 2; In the existing solidified abrasive grinding method; Along with the carrying out of grinding, the solid particle 200 in the abrasive material piece can dissociate out gradually and cram in the abrasive material block gap on grinding pad 102 surfaces, destroys the array pattern of original abrasive material piece; Cause grinding rate decline and crystal column surface to be increased the service life of having reduced grinding pad by the probability that solid particle scratches.
Summary of the invention
The problem that the present invention solves provides a kind of Ginding process of semiconductor devices, prolongs the service life of grinding pad in the solidified abrasive grinding method, improves grinding rate and reduces crystal column surface by the probability of scratch.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of Ginding process of semiconductor devices may further comprise the steps: grinding pad is provided, and said grinding pad surface has the solid particle that produces in the process of lapping; To repair wafer and be positioned on the grinding pad, said reparation crystal column surface is formed with the polysilicon layer that contacts with grinding pad, and said polysilicon layer surface has certain roughness; On grinding pad, add lapping liquid, grind, the solid particle on said polysilicon layer absorption grinding pad surface.
Preferably, the surperficial roughness Ra of said polysilicon layer is 500～2500 dusts.
Preferably, said lapping liquid is an alkaline solution.
Preferably, said alkaline solution is a kind of of proline, alanine or amion acetic acid or its combination.
Preferably, said grinding pad grind the milling time of polysilicon layer be 2～6 minutes/inferior.
Preferably, the said grinding pad grinding rate that grinds polysilicon layer less than 50 dusts/minute.
Preferably, the pH value of said lapping liquid is less than the isoelectric point of polysilicon layer.
Preferably, said solid particle is ceria, silica or silicon nitride.
Preferably, the isoelectric point of said solid particle is less than the pH value of lapping liquid.
Compared with prior art, the present invention has the following advantages:
The reparation wafer that utilizes the surface to have the certain roughness polysilicon layer is repaired grinding pad, and said polysilicon layer is contacted with solid particle on the grinding pad, and the solid particle of cramming in abrasive material block array gap, grinding pad surface is removed totally;
Further, isoelectric point be meant amphion electrically charged pH value because of solution is different changes, when amphion positive and negative charge numerical value equated, the pH value of solution was its isoelectric point; When the pH of solution value during greater than isoelectric point, ion is with electronegative; When pH value of solution value during less than isoelectric point, ion is with positively charged.Among the present invention, the pH value of lapping liquid is less than the isoelectric point of polysilicon, and the isoelectric point of solid particle is less than the pH value of lapping liquid; Therefore, polysilicon layer is positively charged, and solid particle is electronegative, and according to electric charge there is a natural attraction between the sexes characteristic, solid particle is attracted on the polysilicon layer and removes, thereby prolongs the service life of grinding pad, improves grinding wafer speed and Grinding Quality.
Description of drawings
Fig. 1 is a solidified abrasive grinding method lapping device sketch map;
Fig. 2 is the structural representation that the grinding pad surface is crammed by solid particle;
Fig. 3 is the specific embodiment flow chart of semiconductor devices Ginding process of the present invention;
Fig. 4 is the structural representation of the reparation wafer of semiconductor devices Ginding process of the present invention;
Fig. 5 is the sketch map of semiconductor devices Ginding process grinding and repairing wafer of the present invention;
Fig. 6 is that reparation wafer of the present invention is removed the process sketch map of cramming at the solid particle on grinding pad surface.
The specific embodiment
In the solidified abrasive grinding method, the effect that crystal column surface grinds depends primarily on the quality of grinding pad surface abrasive material, and the change of the damage of abrasive material or surperficial abrasive material block array all can cause grinding rate decline and increase crystal column surface by the probability of scratch.The inventor finds that the abrasive material that has now on the grinding pad mainly mixes the abrasive material piece convexity of suppressing formation rule by cerium oxide particles and resin adhesive, the protruding formation of said abrasive material piece abrasive material block array pattern; In process of lapping, because wafer and abrasive material be under the effect of pressure, phase mutual friction, extruding; The abrasive material block array receives the shearing force of different directions, and the solid particle that just dissociates gradually is such as ceria; And cram in the gap of the surperficial abrasive material block array of grinding pad; Destroy the pattern of abrasive material block array, the grinding pressure that makes crystal column surface receive changes, and causes grinding rate to descend; And free solid particle has also increased the probability of crystal column surface grinding scratch.
To the problems referred to above, the inventor has proposed a kind of solution through researching and analysing, and be specially: as shown in Figure 3, step S11 provides grinding pad, and said grinding pad surface has the solid particle that produces in the process of lapping; Step S12 will repair wafer and be positioned on the grinding pad, and said reparation crystal column surface is formed with the polysilicon layer that contacts with grinding pad, and said polysilicon layer surface has certain roughness; Step S13 adds lapping liquid on grinding pad, grind, the solid particle on said polysilicon layer absorption grinding pad surface.
Ginding process of the present invention; Because the polysilicon layer surface has certain roughness (roughness); And polysilicon layer can not produce loss because of grinding pad grinds basically; Its each grinding is lost less than 50 dusts, and the solid particle that makes polysilicon layer in process of lapping, will cram in the abrasive material block gap of grinding pad surface is removed, and makes the grinding pad surface reappear the array pattern of regular abrasive material piece; Further, because the isoelectric point (isoelectric point) of polysilicon is 10.8, the pH value of lapping liquid is 9～10; The isoelectric point of solid particle is less than 9, as ceria be 6.8, silica is 2.2, polysilicon belt positive charge in lapping liquid; The solid particle of cramming in the abrasive material block gap of grinding pad surface is electronegative, so the two can attract each other, and makes solid particle be adsorbed on the polysilicon layer; Thereby it is the grinding pad removing surface is clean; When having avoided follow-up grinding wafer, cram in the gap of grinding pad surface abrasive material piece, reduce grinding rate and the grinding scratch that causes crystal column surface because of abrasive grains.
Below in conjunction with accompanying drawing the specific embodiment of Ginding process of the present invention is described in detail.
Step S11 provides grinding pad, and said grinding pad surface has the solid particle that produces in the process of lapping.
With reference to shown in Figure 1; Said grinding pad 102 is followed successively by rigid layer, tack coat, abrasive material from bottom to upper strata; Said abrasive material is by solid particles such as silica, ceria, alundum (Al, carborundum, boron carbide, zirconia, diamonds and resin adhesive is fixed forms; Solid particle commonly used is a ceria, and particle diameter is between 100～1000 nanometers; The tiny abrasive material block array that the three-dimensional structure of given shapes such as that the abrasive material surface of said fixed formation has is cylindrical, hemispherical, taper shape and pyramid forms.
Said solid particle is in the process of grinding wafer, to produce, and the process of specifically grinding wafer is as shown in Figure 1: at first utilize input cylinder 1051 with output roller 1052 grinding pad 102 to be transported on the grinding table 101; Wafer 103 is absorbed and fixed on the grinding head 104, and wafer 103 surfaces are contacted with grinding pad 102 surfaces; Then lapping liquid is outputed to grinding pad 102 surfaces through solution conveyor tube, lapping liquid is riddled between wafer 103 and the grinding pad 102; Through power drive, grinding table 101 is rotated, and drive said grinding pad 102 and rotate together; Simultaneously, drive grinding head 104 and rotate, drive wafer 103 rotations of absorption on the grinding head 104, thereby make wafer 103 and grinding pad 102 do relative motion, grind.
Because the abrasive material block array on grinding pad 102 surfaces and the constantly friction of wafer 103 surfaces, extruding, under the effect of horizontal and vertical shearing force, the solid particles such as ceria in the abrasive material piece just can spin off gradually; Along with the carrying out of grinding, the solid particle that solid particle that detaches in the abrasive material piece and wafer 103 surface grindings are got off is more and more, and under the extruding of grinding pad 102 and wafer 103 contact-making surfaces, crams in the gap of the abrasive material block array on grinding pad 102 surfaces.As shown in Figure 2, solid particle 200 is crammed in the gap of grinding pad 102 surperficial abrasive material block arrays, has influenced the grinding pressure of wafer 103 surfaces with grinding pad 102, has reduced the grinding rate of wafer 103.Generally after grinding 5～10 wafer, just have a lot of solid particles and cram in the gap of grinding pad surface abrasive material block array, thus the grinding rate of appreciable impact wafer.
Step S12 will repair wafer and be positioned on the grinding pad, and said reparation crystal column surface is formed with the polysilicon layer that contacts with grinding pad, and said polysilicon layer surface has certain roughness.
As shown in Figure 4, the said reparation wafer 300 concrete technologies that form are: on Semiconductor substrate 301, form polysilicon layer 302, said polysilicon layer surface has certain roughness.The growing method of said polysilicon layer can be Low Pressure Chemical Vapor Deposition (LPCVD), plasma enhanced chemical vapor deposition method (PECVD), rapid heat chemical vapour deposition process (RTCVD) or other semiconductive thin film formation methods; Parameters such as temperature, air-flow through the control chemical vapour deposition (CVD) make the polysilicon layer surface of formation be formed with certain roughness, and said roughness characterizes with arithmetic mean deviation roughness (Ra), and scope is 500～2500 dusts, preferred 1500 dusts.
In the present embodiment, said roughness (roughness) is meant the uneven degree of microcosmos geometric shape that less spacing that the polysilicon layer surface has and peak valley are formed, and also is surface roughness.The method for expressing of surface roughness has following three kinds: (1) Ra: arithmetic average deviation roughness.Finger is from the contour curve that characterizes face, and intercepting is measured length L for one section, and is the x axle with coarse dark center line in this length, and the vertical line of getting center line is the y axle, and then coarse curve can be used y=f (x) expression.With the center line is that benchmark is with the lower curve reflexed.Whole curve the contain areas of computer center's line top behind reflexed divided by measuring length, promptly get roughness value more then, and institute's value is a unit with μ m generally, is the interior arithmetic average deviation roughness value of this sign planar survey length range.(2) Rs: maximum height roughness.By intercepting datum length L on the surface curve as measuring length; Peak and minimum point from this length inner curve; When drawing line respectively parallel, apart from being maximal roughness, just measure the distance of vertically measuring peak and minimum point in the length between this two wires with the curve average line.(3) Rz: 10 mean roughness.As measuring length, obtain the 3rd high crest and the 3rd dark trough by intercepting datum length L on the surface curve, two parallel lines that draw respectively, two parallel line spacings are 10 average roughness value Rz, and its value is a unit with μ m generally.For the roughness of microcosmic surface, generally adopt Ra or Rz to characterize.
In the present embodiment, through default, can make grinding system after grinding 5～10 wafer, 1～2 reparation of Automatic Extraction wafer is placed on the grinding pad and grinds.
Step S13 adds lapping liquid on grinding pad, grind, the solid particle on said polysilicon layer absorption grinding pad surface.
As shown in Figure 5; The detailed process of grinding and repairing wafer 300 is following: will repair wafer 300 and be absorbed and fixed on the grinding head 104; Utilize the up-down of grinding head 104, grinding pad 102 surperficial contacts the on making the polysilicon layer of repairing wafer 300 surfaces and being placed on grinding table (Fig. 5 is not shown); On grinding pad 102, add lapping liquid, lapping liquid is filled between polysilicon layer and grinding pad 102 surfaces; Apply downward pressure through grinding head 104 to repairing wafer 300; Start power drive, make grinding head 300 and grinding table rotation, repair wafer 300 and grinding pad 102 relative motions, grind.
As shown in Figure 6; In the present embodiment; Has certain roughness owing to repair the polysilicon layer 301 on wafer 300 surfaces; Make that with when grinding pad 102 surface contact polysilicon layer 301 can be deep enough in the surperficial abrasive material block array gap of grinding pad 102, thereby the solid particle 200 that will cram in abrasive material block array gap clears out.Further, what the abrasive material block arrays on said grinding pad 102 surfaces played abrasive action mainly is cerium oxide particles, and it has polysilicon and well stops effect, makes that the grinding rate of repairing wafer is very little, be generally less than 50 dusts/minute; The time of grinding and repairing wafer is each 2～6 minutes, preferred 3 minutes/inferior; Therefore, each grinding and repairing wafer, the loss of its polysilicon layer is less than 50 dusts.
In the present embodiment, said lapping liquid is an alkaline solution, and the pH value is 9～10; The composition of said alkaline solution is a kind of of proline, alanine or amion acetic acid or its combination, preferred proline.Because said solid particle is electronegative in lapping liquid, polysilicon layer is then positively charged, and therefore according to the principle of opposite sex attraction of electric charge, solid particle is attracted on the polysilicon layer and is removed.
This be because the isoelectric point of said solid particle less than the pH value of lapping liquid, the isoelectric point of polysilicon is then greater than the pH value of lapping liquid, thus make solid particle and polysilicon layer electrically charged polarity opposite.So-called isoelectric point, be meant amphion electrically charged pH value because of solution is different changes, when amphion positive and negative charge numerical value equated, the pH value of solution was its isoelectric point; When the pH of solution value during greater than isoelectric point, ion is with electronegative; When pH value of solution value during less than isoelectric point, ion is with positively charged.Said solid particle comprises ceria, silica and silicon nitride; Their isoelectric point is all less than the pH value of lapping liquid; As the isoelectric point of ceria be 6.8, silica then is 2.2, and the isoelectric point of said polysilicon is 10.8, the pH value of lapping liquid is 9～10; Also be the pH value of the isoelectric point of solid particle less than lapping liquid, electronegative; And the isoelectric point of polysilicon layer is positively charged greater than the pH value of lapping liquid.
In the present embodiment, cram situation, can increase the reparation milling time, perhaps adopt the sheet number that increases the grinding and repairing wafer, increase repairing effect, such as repairing wafer by 2 of continuously grindings in abrasive material block array gap, grinding pad surface according to solid particle.
In the present embodiment; Has certain roughness owing to repair the polysilicon layer of crystal column surface; Make that the jut of polysilicon layer can go deep in the gap of grinding pad surface abrasive material block array the solid particle of cramming in abrasive material block array gap being cleared in the process of lapping; Make the grinding pad surface reappear original abrasive material block array pattern, guarantee the grinding rate of wafer.Further, the abrasive material of grinding pad mainly is to be made up of ceria, stops effect and ceria has good grinding to polysilicon layer; Therefore, in the present embodiment, repair in the grinding wafer process; The polysilicon layer loss of repairing crystal column surface is very little, and each the grinding lost less than 50 dusts; Thereby guarantee that polysilicon layer has certain roughness all the time in repairing process of lapping, improve repairing effect, and can not introduce a large amount of impurity.
Ginding process provided by the invention is positioned on the grinding pad through the reparation wafer that will have the certain roughness polysilicon layer and grinds, and the solid particle that remains in the abrasive material block array gap, grinding pad surface is eliminated away; Simultaneously; Be utilized in the alkaline lapping liquid, solid particle is electronegative, and polysilicon layer is positively charged; The two can attract each other; Make solid particle be attracted on the polysilicon layer, thus the grinding pad removing surface is clean, prevent the grinding rate decline of subsequent wafer and increase the problem of grinding the scratch probability.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. the Ginding process of a semiconductor devices is characterized in that, may further comprise the steps:
Grinding pad is provided, and said grinding pad surface has the solid particle that produces in the process of lapping;
To repair wafer and be positioned on the grinding pad, said reparation crystal column surface is formed with the polysilicon layer that contacts with grinding pad, and said polysilicon layer surface has certain roughness;
On grinding pad, add lapping liquid, grind, the solid particle on said polysilicon layer absorption grinding pad surface.
2. Ginding process according to claim 1 is characterized in that, the roughness Ra on said polysilicon layer surface is 500～2500 dusts.
3. Ginding process according to claim 1 is characterized in that, said lapping liquid is an alkaline solution.
4. Ginding process according to claim 3 is characterized in that, said alkaline solution is a kind of of proline, alanine or amion acetic acid or its combination.
5. Ginding process according to claim 1 is characterized in that, the milling time that said grinding pad grinds said polysilicon layer be 2～6 minutes/inferior.
6. Ginding process according to claim 1 is characterized in that, the grinding rate that said grinding pad grinds said polysilicon layer less than 50 dusts/minute.
7. according to claim 1 or 3 described Ginding process, it is characterized in that the pH value of said lapping liquid is less than the isoelectric point of said polysilicon layer.
8. Ginding process according to claim 1 is characterized in that, said solid particle is ceria, silica or silicon nitride.
9. Ginding process according to claim 1 is characterized in that, the isoelectric point of said solid particle is less than the pH value of lapping liquid.
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| CN201110023431.6A CN102601723B (en) | 2011-01-20 | 2011-01-20 | Grinding method for semi-conductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106625031A (en) * | 2015-10-30 | 2017-05-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103444A (en) * | 2005-01-19 | 2008-01-09 | 安集微电子（上海）有限公司 | Cmp polishing system and abrasive solution |
| US20080287041A1 (en) * | 2005-11-08 | 2008-11-20 | Freescale Semiconductor, Inc. | System and Method for Removing Particles From a Polishing Pad |
| CN101352834A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad collating unit and grinding pad collating method |
| CN101722475A (en) * | 2008-10-22 | 2010-06-09 | 宋健民 | CMP pad dressers with hybridized abrasive surface and related methods |
| US20100240285A1 (en) * | 2009-03-17 | 2010-09-23 | Satoko Seta | Polishing apparatus and method of manufacturing semiconductor device using the same |
-
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- 2011-01-20 CN CN201110023431.6A patent/CN102601723B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103444A (en) * | 2005-01-19 | 2008-01-09 | 安集微电子（上海）有限公司 | Cmp polishing system and abrasive solution |
| US20080287041A1 (en) * | 2005-11-08 | 2008-11-20 | Freescale Semiconductor, Inc. | System and Method for Removing Particles From a Polishing Pad |
| CN101352834A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad collating unit and grinding pad collating method |
| CN101722475A (en) * | 2008-10-22 | 2010-06-09 | 宋健民 | CMP pad dressers with hybridized abrasive surface and related methods |
| US20100240285A1 (en) * | 2009-03-17 | 2010-09-23 | Satoko Seta | Polishing apparatus and method of manufacturing semiconductor device using the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106625031A (en) * | 2015-10-30 | 2017-05-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing method |
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