CN102593716A - Operating method of optical fiber semiconductor laser integrated module - Google Patents
Operating method of optical fiber semiconductor laser integrated module Download PDFInfo
- Publication number
- CN102593716A CN102593716A CN2011100064885A CN201110006488A CN102593716A CN 102593716 A CN102593716 A CN 102593716A CN 2011100064885 A CN2011100064885 A CN 2011100064885A CN 201110006488 A CN201110006488 A CN 201110006488A CN 102593716 A CN102593716 A CN 102593716A
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- laser diode
- optical fiber
- semiconductor laser
- diode pipe
- pipe bar
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses an operating method of an optical fiber semiconductor laser integrated module. A laser diode pipe strip in the optical fiber semiconductor laser integrated module is fixed on a copper base and is locked by using a cathode connection wire; an NTC (Negative Temperature Coefficient) temperature sensor mounting hole is arranged on the base; a positive terminal on a circuit board is connected with the copper base, and a negative terminal is connected with the cathode connection wire; the diode is connected and disconnected at large current to generate reverse electromotive force to prevent the laser diode pipe strip from being punctured by large current; a relay maintains disconnection after starting up; when the positive terminal and the negative terminal switch on, the machine starts a self-check program to open the relay, and the laser diode piping is activated through current to light; a power optical fiber is connected with the copper base through an FC (Fiber Channel) interface to lead out the light from the laser diode pipe strip.
Description
Technical field
The present invention relates to a kind of optical fiber semiconductor laser integration module method of work, it is worked under identical voltage and current, is much smaller than the caloric value of existing apparatus; Thereby reduce the power consumption of laser diode; Improve its useful life, reach 15000 hours, in addition the infrared laser of its output; Wavelength is more stable, has improved operating efficiency greatly.
Technical background
Semiconductor laser diode in the optical fiber semiconductor laser integration module is different from the congenerous product has several big characteristics.For example: volume is little; Than the solid-state laser of similar helium neon laser or neodymium-doped yttrium-aluminum garnet solid state laser, his volume is littler, can save installing space effectively, improves the ease of its maintenance and repair; Simultaneously it can control light intensity through Control current, make whole Optical devices applicability with can be handling stronger.When the wavelength of the semiconductor laser diode output that has these characteristics was short, they were used as the light source of optical recording, storage apparatus.Simultaneously, when their ripple was long, they were used as the light source of optical communication.And in the time of their high-output power, they are used as the solids finishing and use.At present, general laser diode structure is by laser diode pipe bar, and copper pedestal, stainless steel stent, NTC temperature sensor installing hole, driving power plate, FC interface, optical fiber are formed.
For the laser diode in the optical fiber semiconductor laser integration module, the control room of wavelength is important.The more important thing is that it needs an extra device to remove to be dissipated in the heat that produces when optical module operates,, will get rid of towards the outside rapidly by the heat that ambient temperature causes the temperature raising to be produced simultaneously for better control wavelength.As a result, in order to satisfy this requirement, people put forward a lot of different packaging structures, and in these structures, when optical fiber semiconductor laser integration module device was activated, producing heat can be discharged rapidly.But conventional art is controlled the influence that method of temperature always is controlled by Heat Conduction Material efficient through heat abstractor, can only be effective at short notice, can't thoroughly solve the high problem of temperature when using for a long time, and normally use thereby influence module.
Summary of the invention
In order to overcome the influence that the heat radiation of existing fiber semiconductor laser module brings to its life-span, wavelength; Patent of the present invention provides a kind of new optical fiber semiconductor laser integration module method of work; Caloric value is little during its work, thereby solves the drawback that conventional module is in the past brought.For solving the technical scheme that its technical problem adopts be: it is that the laser diode pipe bar in the optical fiber semiconductor module is fixed on the copper pedestal with thermolysis, locks with cathode connection again, is reserved with NTC temperature sensor installing hole on the pedestal.Positive terminal on the wiring board links to each other with the copper pedestal, and negative terminal links to each other with cathode connection.Diode switches on and off at big electric current, and protection laser diode pipe bar is not punctured by big electric current when producing big inverse electromotive force.Relay keeps opening circuit after start, and whether the various environmental changes when machine begins the self-check program analog operation are consistent with preliminary setting parameter with the contrast actual parameter.
When positive terminal negative terminal energized, machine startup self-detection program is opened relay, and current activation laser diode pipe bar makes it luminous.Power Fiber links to each other with the copper pedestal through the FC interface, and the photoconduction that laser diode pipe bar is sent goes out.
Laser diode in the optical fiber semiconductor laser module is worked under identical voltage and current; Caloric value than original device is much smaller, thereby reduces the power consumption of optical fiber semiconductor laser module laser diode, improves its useful life; Reach 15000 hours; The infrared laser of its output in addition, wavelength is more stable, has improved operating efficiency greatly.
Description of drawings
Further specify the present invention below in conjunction with accompanying drawing and embodiment.
Fig. 1 is a structure drawing of device of the present invention;
Fig. 2 semiconductor laser module diode vertical view;
Embodiment
Laser diode pipe bar 1 with reference in figure 1, the 2 optical fiber semiconductor laser modules is fixed on the copper pedestal 2, locks with cathode connection 3 again.Positive terminal 7 on the wiring board links to each other with copper pedestal 2, and negative terminal 8 links to each other with cathode connection 3.Diode 5 is in order to switch on and off at big electric current, to protect laser diode pipe bar not punctured by big electric current when producing big inverse electromotive force.The effect of relay 6 be after start, keep opening circuit, whether the various environmental changes when machine begins the self-check program analog operation consistent with preliminary setting parameter with the contrast actual parameter.
When positive terminal 7, negative terminal 8 energized, machine opens relay 6 through the startup self-detection program, and current activation laser diode pipe bar 1 makes it luminous.Power Fiber 9 links to each other with the copper pedestal through FC interface 10, and the photoconduction that laser diode pipe bar is sent goes out.
Above execution mode shows; Through a kind of optical fiber semiconductor laser integration module method of work that patent of the present invention provides, can overcome the influence that the heat radiation of existing fiber semiconductor laser integration module brings to the laser diode life-span in the optical fiber semiconductor laser module.
Claims (1)
1. optical fiber semiconductor laser integration module method of work; It is that the laser diode pipe bar in a kind of optical fiber semiconductor laser integration module is fixed on the copper pedestal with thermolysis; Lock with cathode connection again, be reserved with NTC temperature sensor installing hole on the pedestal.Positive terminal on the wiring board links to each other with the copper pedestal, and negative terminal links to each other with cathode connection.Diode switches on and off at big electric current, and protection laser diode pipe bar is not punctured by big electric current when producing big inverse electromotive force.Relay keeps opening circuit after start.When positive terminal negative terminal energized, machine startup self-detection program is opened relay, and current activation laser diode pipe bar makes it luminous.Power Fiber links to each other with the copper pedestal through the FC interface, and the photoconduction that laser diode pipe bar is sent goes out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100064885A CN102593716A (en) | 2011-01-13 | 2011-01-13 | Operating method of optical fiber semiconductor laser integrated module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100064885A CN102593716A (en) | 2011-01-13 | 2011-01-13 | Operating method of optical fiber semiconductor laser integrated module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102593716A true CN102593716A (en) | 2012-07-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100064885A Pending CN102593716A (en) | 2011-01-13 | 2011-01-13 | Operating method of optical fiber semiconductor laser integrated module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102593716A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2602516Y (en) * | 2002-12-16 | 2004-02-04 | 中国科学院光电技术研究所 | Power supply, refrigeration, heat emission, and temperature control system special for semiconductor laser |
| CN2636459Y (en) * | 2003-07-17 | 2004-08-25 | 中国电子科技集团公司第十三研究所 | High power semiconductor laser wire array of high efficiency packaging structure |
| CN1812213A (en) * | 2006-02-24 | 2006-08-02 | 清华大学 | Passive radiating small heat sink semiconductor laser bar |
| CN101017956A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Encapsulation structure and method of the high-speed semiconductor light emission component |
| US20080303127A1 (en) * | 2007-06-05 | 2008-12-11 | Mitsubishi Electric Corporation | Cap-less package and manufacturing method thereof |
-
2011
- 2011-01-13 CN CN2011100064885A patent/CN102593716A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2602516Y (en) * | 2002-12-16 | 2004-02-04 | 中国科学院光电技术研究所 | Power supply, refrigeration, heat emission, and temperature control system special for semiconductor laser |
| CN2636459Y (en) * | 2003-07-17 | 2004-08-25 | 中国电子科技集团公司第十三研究所 | High power semiconductor laser wire array of high efficiency packaging structure |
| CN101017956A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Encapsulation structure and method of the high-speed semiconductor light emission component |
| CN1812213A (en) * | 2006-02-24 | 2006-08-02 | 清华大学 | Passive radiating small heat sink semiconductor laser bar |
| US20080303127A1 (en) * | 2007-06-05 | 2008-12-11 | Mitsubishi Electric Corporation | Cap-less package and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 武斌等: "非制冷980nm半导体激光器封装设计与热特性分析", 《中国激光》, vol. 36, no. 4, 30 April 2009 (2009-04-30) * |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20120718 |