CN102593306B - Light emitting diode crystal grain, manufacture method thereof and light emitting diode packaging structure - Google Patents
Light emitting diode crystal grain, manufacture method thereof and light emitting diode packaging structure Download PDFInfo
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- CN102593306B CN102593306B CN201110004141.7A CN201110004141A CN102593306B CN 102593306 B CN102593306 B CN 102593306B CN 201110004141 A CN201110004141 A CN 201110004141A CN 102593306 B CN102593306 B CN 102593306B
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- conduction region
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Abstract
The invention provides a light emitting diode crystal grain which comprises a substrate, a semiconductor luminescence structure, a transparent conducting layer and an insulating layer. The substrate comprises a first conduction region and a second conduction region which are mutually insulated. The semiconductor luminescence structure comprises a conductive substrate and a P type III family nitride semiconductor layer. The conductive substrate of the conductive substrate is fixed on the second conduction region of the substrate. The transparent conducting layer is connected with the first conduction region of the substrate and the P type III family nitride semiconductor layer. The transparent conducting layer and the second conduction region of the substrate are electrically insulated. The insulating layer enables the transparent conducting layer and other parts of the semiconductor luminescence structure apart from the P type III family nitride semiconductor layer to be insulated. At a light extraction side of the above light emitting diode crystal grain, there is no need to set a thick metal electrode and a solder ball which shade light, and light extraction efficiency of the light emitting diode crystal grain is raised. The invention also discloses a manufacture method of the light emitting diode crystal grain and a light emitting diode packaging structure.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof.
Background technology
In the prior art, package structure for LED generally need to be beaten gold thread so that the electrode of LED crystal particle is electrically connected to the weld pad of substrate, and bright dipping one side of LED crystal particle need to arrange corresponding thick metal electrode and soldered ball to be connected with gold thread.Yet soldered ball and thick metal electrode can shut out the light, thus the light extraction efficiency of reduction LED crystal particle and whole package structure for LED.
Summary of the invention
In view of this, be necessary the LED crystal particle that provides a kind of light extraction efficiency higher.
A kind of LED crystal particle, comprise substrate, semiconductor light emitting structure, transparency conducting layer and insulating barrier, substrate comprises the first conduction region and second conduction region of mutually insulated, semiconductor light emitting structure is for vertically conducting structure, semiconductor light emitting structure comprises conductive substrates and P type group iii nitride semiconductor layer, conductive substrates and P type group iii nitride semiconductor layer lay respectively at the two ends of semiconductor light emitting structure, the conductive substrates of semiconductor light emitting structure is fixed on the second conduction region of substrate, the first conduction region of transparency conducting layer connection substrate and P type group iii nitride semiconductor layer, the second conduction region electric insulation of transparency conducting layer and substrate, this insulating barrier makes other SI semi-insulations except P type group iii nitride semiconductor layer of transparency conducting layer and semiconductor light emitting structure.
Bright dipping one side of above-mentioned LED crystal particle needn't arrange thick metal electrode and the soldered ball of shading, thereby improves the light extraction efficiency of LED crystal particle.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Accompanying drawing explanation
Fig. 1 is the generalized section of the package structure for LED in embodiment of the present invention.
Fig. 2 is that in a better embodiment of the present invention, semiconductor light emitting structure is fixed on the generalized section after substrate.
Fig. 3 forms the generalized section after insulating barrier in Fig. 2.
Fig. 4 forms the generalized section after first window and Second Window in Fig. 3.
Fig. 5 forms the generalized section after transparency conducting layer in Fig. 4.
Fig. 6 is the generalized section of the package structure for LED in another execution mode of the present invention.
Fig. 7 is that in another better embodiment of the present invention, semiconductor light emitting structure is fixed on the generalized section after substrate.
Fig. 8 forms the generalized section after insulating barrier in Fig. 7.
Fig. 9 forms the generalized section after first window and Second Window in Fig. 8.
Figure 10 forms the generalized section after transparency conducting layer in Fig. 9.
Figure 11 is the generalized section of the package structure for LED in another better embodiment of the present invention.
Main element symbol description
Package structure for LED 10,20
Pedestal 11,21
The first weld pad 111,211
The second weld pad 112,212
LED crystal particle 12,22
Packaging body 13
Substrate 14,24
The first conduction region 141,241
The second conduction region 142,242
Insulating material 143
Semiconductor light emitting structure 15,25
Conductive substrates 151,251
Bragg reflecting layer 152,252
N-type group iii nitride semiconductor layer 153,253
Active layer 154,254
P type gallium nitride layer 156
P type aluminium gallium nitride alloy layer 155
P type group iii nitride semiconductor layer 157,257
Insulating barrier 16,26
First window 161,261
Second Window 162,262
Transparency conducting layer 17,27
The first covering part 171,271
Connecting portion 172,272
The second covering part 173,273
The 3rd weld pad 213
The 3rd conduction region 243
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1, the package structure for LED 10 that embodiment of the present invention provides comprises pedestal 11, LED crystal particle 12 and packaging body 13.The first weld pad 111 and second weld pad 112 of mutually insulated are set on pedestal 11.
See also Fig. 5, LED crystal particle 12 comprises substrate 14, semiconductor light emitting structure 15, insulating barrier 16 and transparency conducting layer 17.Substrate 14 comprises that the first conduction region 141 of mutually insulated and 142, the first conduction regions 141, the second conduction region are connected by insulating material 143 with the second conduction region 142.
Semiconductor light emitting structure 15 is for vertically conducting structure, comprise the conductive substrates 151, Bragg reflecting layer 152, N-type group iii nitride semiconductor layer 153, active layer 154 and the P type group iii nitride semiconductor layer 157 that stack gradually, conductive substrates 151 and P type group iii nitride semiconductor layer 157 lay respectively at the two ends of semiconductor light emitting structure 15.Conductive substrates 151 is fixed on the second conduction region 142 of substrate 14.Bragg reflecting layer 152 upwards reflexes to P type group iii nitride semiconductor layer 157 1 side by the light of active layer 154 downward directive conductive substrates 151, thereby improves light extraction efficiency.In the present embodiment, P type group iii nitride semiconductor layer 157 comprises P type gallium nitride layer 156 and P type aluminium gallium nitride alloy layer 155, and N-type group iii nitride semiconductor layer 153 is n type gallium nitride.
Between the first conduction region 141 of transparency conducting layer 17 connection substrates 14 and P type group iii nitride semiconductor layer 157.Insulating barrier 16 makes arbitrary lateral wall insulation of transparency conducting layer 17 and semiconductor light emitting structure 15, and insulating barrier 16 makes transparency conducting layer 17 and semiconductor light emitting structure 15 other SI semi-insulations except P type group iii nitride semiconductor layer 157.Furthermore, insulating barrier 16 insulate transparency conducting layer 17 and the second conduction region 142 of substrate 14.In the present embodiment, transparency conducting layer 17 adopts transparent metal, indium tin metal oxide or carbon nano-tube film wherein a kind of; Insulating barrier 16 adopts silicon dioxide or silicon nitride, and insulating barrier 16 preferably adopts transparent electrical insulating material.
Insulating barrier 16 covers semiconductor light emitting structure 15 and substrate 14, insulating barrier 16 has first window 161 and Second Window 162, first window 161 is positioned at P type group iii nitride semiconductor layer 157 and makes part P type group iii nitride semiconductor layer 157 exposed, and Second Window 162 is positioned at the first conduction region 141 of substrate 14 and makes the first conduction region 141 exposed.Transparency conducting layer 17 comprises the first covering part 171, connecting portion 172 and the second covering part 173, the first covering part 171 covers the first window 161 of insulating barrier 16, the second covering part 173 covers the Second Window 162 of insulating barrier 16, and connecting portion 172 is connected between the first covering part 171 and the second covering part 173.
LED crystal particle 12 is fixed on pedestal 11, the coated LED crystal particle 12 of packaging body 13.In the present embodiment, the first conduction region 141 of the substrate 14 of LED crystal particle 12 is fixed on the first weld pad 111 of pedestal 11, the second conduction region 142 of substrate 14 is fixed on the second weld pad 112 of pedestal 11, external power source applies voltage to the first weld pad 111 and the second weld pad 112, and LED crystal particle 12 can be luminous.
Above-mentioned package structure for LED 10 need not be beaten gold thread, thick metal electrode and the soldered ball of shading needn't be set on the P type group iii nitride semiconductor layer 157 of LED crystal particle 12, be thick metal electrode and the soldered ball that bright dipping one side of LED crystal particle 12 needn't arrange shading, more light can penetrate LED crystal particle 12, thereby improves the light extraction efficiency of LED crystal particle 12 and whole package structure for LED 10.Furthermore, package structure for LED 10 does not have gold thread, thereby avoids in use gold thread to break, and extends the useful life of package structure for LED 10 and improves its use reliability.Further, LED crystal particle 12 by heat conductivility preferably metal material be directly connected with the weld pad of pedestal 11, the heat that LED crystal particle 12 produces can be dispersed in outside air faster.
See also Fig. 2 to Fig. 5, the manufacture method of a kind of LED crystal particle 12 that embodiment of the present invention provides comprises following step:
Substrate 14 is provided, and this substrate 14 comprises the first conduction region 141 and second conduction region 142 of mutually insulated.
Semiconductor light emitting structure 15 is provided, this semiconductor light emitting structure 15 is for vertically conducting structure, this semiconductor light emitting structure 15 comprises conductive substrates 151, Bragg reflecting layer 152, N-type group iii nitride semiconductor layer 153, active layer 154 and the P type group iii nitride semiconductor layer 157 stacking gradually, and the conductive substrates of semiconductor light emitting structure 15 151 is fixed on the second conduction region 142 of substrate 14.
On substrate 14 and semiconductor light emitting structure 15, form insulating barrier 16, the method that forms insulating barrier 16 can adopt physical vapor deposition or chemical vapor deposition.
On insulating barrier 16, form first window 161 and Second Window 162, first window 161 is positioned at P type group iii nitride semiconductor layer 157 and makes P type group iii nitride semiconductor layer 157 exposed, and Second Window 162 is positioned at the first conduction region 141 of substrate 14 and makes the first conduction region 141 exposed.The method of removing insulating barrier 16 can adopt dry ecthing or wet etching.
Form transparency conducting layer 17, the first conduction region 141 and P type group iii nitride semiconductor layer 157 of transparency conducting layer 17 connection substrates 14.This transparency conducting layer 17 comprises the first covering part 171, connecting portion 172 and the second covering part 173, the first covering part 171 covers the first window 161 of insulating barrier 16, the second covering part 173 covers the Second Window 162 of insulating barrier 16, and connecting portion 172 is connected between the first covering part 171 and the second covering part 173.The method that forms transparency conducting layer 17 can adopt plating, change the methods such as plating, sputter, electron beam or evaporation.
Refer to Fig. 6 and Figure 10, the package structure for LED 20 that another better embodiment of the present invention provides, be with a upper execution mode difference, the first weld pad 211, the second weld pad 212 and the 3rd weld pad 213 of mutually insulated are set on pedestal 21, and substrate 24 comprises the first conduction region 241, the second conduction region 242 and the 3rd conduction region 243 of mutually insulated.
The conductive substrates 251 of semiconductor light emitting structure 25 is fixed on the second conduction region 242 of substrate 24.The first conduction region 241 and P type group iii nitride semiconductor layer 257 of transparency conducting layer 27 connection substrates 24, and the 3rd conduction region 243 and P type group iii nitride semiconductor layer 257 of transparency conducting layer 27 connection substrates 24.
Insulating barrier 26 makes arbitrary lateral wall insulation of transparency conducting layer 27 and semiconductor light emitting structure 25, be that insulating barrier 26 makes transparency conducting layer 27 and semiconductor light emitting structure 25 other SI semi-insulations except P type group iii nitride semiconductor layer 257, and insulating barrier 26 insulate transparency conducting layer 27 and the second conduction region 242 of substrate 24.Insulating barrier 26 covers semiconductor light emitting structure 25 and substrate 24, insulating barrier 26 has first window 261 and Second Window 262, first window 261 is positioned at P type group iii nitride semiconductor layer 257 and makes part P type group iii nitride semiconductor layer 257 exposed, Second Window 262 is positioned at the first conduction region 241 and the 3rd conduction region 243 of substrate 24, Second Window 262 make the first conduction region 241 and the 3rd conduction region 243 exposed.
Transparency conducting layer 27 comprises the first covering part 271, connecting portion 272 and the second covering part 273, the first covering part 271 covers the first window 261 of insulating barrier 26, the second covering part 273 covers the Second Window 262 of insulating barrier 26, and connecting portion 272 is connected between the first covering part 271 and the second covering part 273.
The first conduction region 241 of the substrate 24 of LED crystal particle 22 is fixed on the first weld pad 211 of pedestal 21, the second conduction region 242 of substrate 24 is fixed on the second weld pad 212 of pedestal 21, and the 3rd conduction region 243 of substrate 24 is fixed on the 3rd weld pad 213 of pedestal 21.
See also Fig. 7 to Figure 10, the manufacture method of a kind of LED crystal particle 22 that another better embodiment of the present invention provides comprises following step:
Substrate 24 is provided, and this substrate 24 comprises the first conduction region 241, the second conduction region 242 and the 3rd conduction region 243, and wherein insulate with the first conduction region 241, the 3rd conduction region 243 respectively in the second conduction region 242, and the first conduction region 241 and the 3rd conduction region 243 conduct.
Semiconductor light emitting structure 25 is provided, this semiconductor light emitting structure 25 is for vertically conducting structure, this semiconductor light emitting structure 25 comprises conductive substrates 251, Bragg reflecting layer 252, N-type group iii nitride semiconductor layer 253, active layer 254 and the P type group iii nitride semiconductor layer 257 stacking gradually, and the conductive substrates of semiconductor light emitting structure 25 251 is fixed on the second conduction region 242 of substrate 24.
On substrate 24 and semiconductor light emitting structure 25, form insulating barrier 26, the method that forms insulating barrier 26 can adopt physical vapor deposition or chemical vapor deposition.
On insulating barrier 26, form first window 261 and Second Window 262, first window 261 is positioned at P type group iii nitride semiconductor layer 257 and makes P type group iii nitride semiconductor layer 257 exposed, Second Window 262 is positioned at the first conduction region 241 and the 3rd conduction region 243 of substrate 24, Second Window 262 make the first conduction region 241 and the 3rd conduction region 243 exposed.The method of removing insulating barrier 26 can adopt dry ecthing or wet etching.
Form transparency conducting layer 27, the first conduction region 241 and P type group iii nitride semiconductor layer 257 of transparency conducting layer 27 connection substrates 24, and the 3rd conduction region 243 and P type group iii nitride semiconductor layer 257 of transparency conducting layer 27 connection substrates 24.This transparency conducting layer 27 comprises the first covering part 271, connecting portion 272 and the second covering part 273, the first covering part 271 covers the first window 261 of insulating barrier 26, the second covering part 273 covers the Second Window 262 of insulating barrier 26, and connecting portion 272 is connected between the first covering part 271 and the second covering part 273.The method that forms transparency conducting layer 27 can adopt plating, change the methods such as plating, sputter, electron beam or evaporation.
Figure 11 illustrates the package structure for LED 30 that another better embodiment of the present invention provides.Be with a upper execution mode difference: package structure for LED 30 comprises LED crystal particle 32 and packaging body 33, packaging body 33 is positioned on the substrate 34 of LED crystal particle 32 and directly semiconductor light emitting structure 35, insulating barrier 36 and the transparency conducting layer 37 of coated this LED crystal particle 32.
Claims (12)
1. a LED crystal particle, comprise semiconductor light emitting structure and transparency conducting layer, semiconductor light emitting structure is for vertically conducting structure, semiconductor light emitting structure comprises conductive substrates and P type group iii nitride semiconductor layer, conductive substrates and P type group iii nitride semiconductor layer lay respectively at the two ends of semiconductor light emitting structure, it is characterized in that: also comprise substrate and insulating barrier, substrate comprises the first conduction region and second conduction region of mutually insulated, the tabular substrate of the common formation in the first conduction region and the second conduction region, the conductive substrates of semiconductor light emitting structure is fixed on the second conduction region of substrate, the first conduction region of transparency conducting layer connection substrate and P type group iii nitride semiconductor layer, the second conduction region electric insulation of transparency conducting layer and substrate, this insulating barrier makes other SI semi-insulations except P type group iii nitride semiconductor layer of transparency conducting layer and semiconductor light emitting structure.
2. LED crystal particle as claimed in claim 1, it is characterized in that: insulating barrier covers semiconductor light emitting structure and substrate, insulating barrier has first window and Second Window, first window is positioned at P type group iii nitride semiconductor layer and makes P type group iii nitride semiconductor layer exposed, Second Window is positioned at the first conduction region of substrate and makes the first conduction region exposed, transparency conducting layer comprises the first covering part, connecting portion and the second covering part, the first covering part covers the first window of insulating barrier, the second covering part covers the Second Window of insulating barrier, connecting portion is connected between the first covering part and the second covering part.
3. LED crystal particle as claimed in claim 1, it is characterized in that: this semiconductor light emitting structure also comprises Bragg reflecting layer, N-type group iii nitride semiconductor layer and active layer, conductive substrates, Bragg reflecting layer, N-type group iii nitride semiconductor layer, active layer and P type group iii nitride semiconductor layer stack gradually.
4. LED crystal particle as claimed in claim 1, is characterized in that: this insulating barrier makes the lateral wall insulation of transparency conducting layer and semiconductor light emitting structure.
5. LED crystal particle as claimed in claim 1, is characterized in that: the material of this conductive substrates is carborundum or silicon.
6. LED crystal particle as claimed in claim 1, is characterized in that: substrate also comprises the 3rd conduction region, the 3rd conduction region and the second conduction region electric insulation, the 3rd conduction region of transparency conducting layer connection substrate and P type group iii nitride semiconductor layer.
7. LED crystal particle as claimed in claim 6, it is characterized in that: insulating barrier covers semiconductor light emitting structure and substrate, insulating barrier has first window and Second Window, first window is positioned at P type group iii nitride semiconductor layer and makes P type group iii nitride semiconductor layer exposed, Second Window be positioned at the first conduction region and the 3rd conduction region of substrate and make the first conduction region and the 3rd conduction region exposed, transparency conducting layer comprises the first covering part, connecting portion and the second covering part, the first covering part covers the first window of insulating barrier, the second covering part covers the Second Window of insulating barrier, connecting portion is connected between the first covering part and the second covering part.
8. a package structure for LED, comprise pedestal, LED crystal particle and packaging body, LED crystal particle is fixed on pedestal, this LED crystal particle of packaging body coats, is characterized in that: this LED crystal particle is the LED crystal particle described in any one in claim 1 to 7.
9. a LED crystal particle manufacture method, it comprises the following steps:
Substrate is provided, and this substrate comprises the first conduction region and second conduction region of mutually insulated, the tabular substrate of the common formation in the first conduction region and the second conduction region;
Semiconductor light emitting structure is provided, this semiconductor light emitting structure is for vertically conducting structure, semiconductor light emitting structure comprises conductive substrates and P type group iii nitride semiconductor layer, conductive substrates and P type group iii nitride semiconductor layer lay respectively at the two ends of semiconductor light emitting structure, the conductive substrates of semiconductor light emitting structure are fixed on the second conduction region of substrate;
On substrate and semiconductor light emitting structure, form insulating barrier;
On insulating barrier, form first window and Second Window, first window is positioned at P type group iii nitride semiconductor layer and makes P type group iii nitride semiconductor layer exposed, and Second Window is positioned at the first conduction region of substrate and makes the first conduction region exposed;
Form transparency conducting layer, the first conduction region of transparency conducting layer connection substrate and P type group iii nitride semiconductor layer.
10. LED crystal particle manufacture method as claimed in claim 9, it is characterized in that: this transparency conducting layer comprises the first covering part, connecting portion and the second covering part, the first covering part covers the first window of insulating barrier, the second covering part covers the Second Window of insulating barrier, and connecting portion is connected between the first covering part and the second covering part.
11. LED crystal particle manufacture methods as claimed in claim 9, it is characterized in that: substrate also comprises the 3rd conduction region, the 3rd conduction region and the second conduction region electric insulation, Second Window is positioned at the 3rd conduction region of substrate and makes the 3rd conduction region exposed, the 3rd conduction region of transparency conducting layer connection substrate and P type group iii nitride semiconductor layer, transparency conducting layer comprises the first covering part, connecting portion and the second covering part, the first covering part covers the first window of insulating barrier, the second covering part covers the Second Window of insulating barrier, connecting portion is connected between the first covering part and the second covering part.
12. 1 kinds of package structure for LED, comprise LED crystal particle and packaging body, it is characterized in that: this LED crystal particle is the LED crystal particle described in any one in claim 1 to 7, packaging body is positioned on the substrate of LED crystal particle and semiconductor light emitting structure, insulating barrier and the transparency conducting layer of coated this LED crystal particle.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110004141.7A CN102593306B (en) | 2011-01-10 | 2011-01-10 | Light emitting diode crystal grain, manufacture method thereof and light emitting diode packaging structure |
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| CN201110004141.7A CN102593306B (en) | 2011-01-10 | 2011-01-10 | Light emitting diode crystal grain, manufacture method thereof and light emitting diode packaging structure |
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| CN102593306A CN102593306A (en) | 2012-07-18 |
| CN102593306B true CN102593306B (en) | 2014-12-10 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2694495Y (en) * | 2003-09-11 | 2005-04-20 | 兆亨科技股份有限公司 | Light emitting diode with compound reflection construction |
| CN1835256A (en) * | 2005-03-02 | 2006-09-20 | 冲数据株式会社 | Semiconductor composite apparatus,led,led printing head and imaging device |
| CN101358715A (en) * | 2008-09-10 | 2009-02-04 | 和谐光电科技（泉州）有限公司 | Packaging technology for white light LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7883910B2 (en) * | 2009-02-03 | 2011-02-08 | Industrial Technology Research Institute | Light emitting diode structure, LED packaging structure using the same and method of forming the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2694495Y (en) * | 2003-09-11 | 2005-04-20 | 兆亨科技股份有限公司 | Light emitting diode with compound reflection construction |
| CN1835256A (en) * | 2005-03-02 | 2006-09-20 | 冲数据株式会社 | Semiconductor composite apparatus,led,led printing head and imaging device |
| CN101358715A (en) * | 2008-09-10 | 2009-02-04 | 和谐光电科技（泉州）有限公司 | Packaging technology for white light LED |
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| CN102593306A (en) | 2012-07-18 |
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Granted publication date: 20141210 Termination date: 20210110 |