CN102593253B - Method for preparing heterogeneous crystal silicon solar battery passivation layer - Google Patents
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- CN102593253B CN102593253B CN201210042843.9A CN201210042843A CN102593253B CN 102593253 B CN102593253 B CN 102593253B CN 201210042843 A CN201210042843 A CN 201210042843A CN 102593253 B CN102593253 B CN 102593253B
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Abstract
The invention relates to a method for preparing a heterogeneous crystal silicon solar battery passivation layer. The method comprises the following steps of: preparing a hydrogenated silicon nitride layer by adopting a hot filament chemical vapor deposition method, and taking silane as a silica source and ammonia gas as a nitrogen source; or preparing a hydrogenated silicon oxynitride layer by adopting the hot filament chemical vapor deposition method, and taking the silane as the silicon source, the ammonia gas as the nitrogen source, and nitrogen oxide or carbon dioxide as an oxygen source. The method for preparing the heterogeneous crystal silicon solar battery passivation layer has the characteristics of high gas source utilization ratio, high growth rate, few interface defect state and the like, and the passivation effect of a prepared film is superior to that of a film which is prepared by a plasma-assisted chemical vapor deposition method, so that the method is favorable for increasing the efficiency of a hetero-junction solar battery.
Description
Technical field
The invention belongs to the preparation field of solar cell passivation layer, particularly a kind of preparation method of heterojunction crystal silicon solar battery passivation layer.
Background technology
Heterojunction crystal silicon solar battery is the existing crystal silicon solar battery structure of very potential replacement, becomes one of technology of solar cell device main product.Current heterojunction crystal silicon solar battery technology, the most outstanding with SANYO GS company, the efficiency of its battery produced reaches 23%.Other Duo Jia research institutions, as Hagen, Germany university, regenerative resource National Laboratory of the U.S. etc., the hetero-junction solar cell efficiency of preparation also all achieves good result.
Heterojunction crystal silicon battery it is highly important that the performance of its passivation layer to its performance impact.At present its passivation material is hydrogenation non crystal silicon film prepared by plasma-assisted chemical vapour deposition method or hot filament CVD substantially, and Ha Gen university selects the standby hydro-oxidation silicon thin film of plasma-assisted chemical vapour deposition legal system also to achieve good result as its passivation material.
Hot filament CVD is compared to plasma-assisted chemical vapour deposition, and few to the damage at interface during deposit film, source of the gas utilance is high, and the film hydrogen content of preparation is high, so have better passivation effect.The method is at silicon-based thin film solar cell, and the application of the aspects such as the anti-reflecting layer of crystal silicon battery has achieved good result, also achieves good effect preparing in the hydrogenation non crystal silicon film of heterojunction.
Summary of the invention
The features such as technical problem to be solved by this invention is to provide a kind of preparation method of heterojunction crystal silicon solar battery passivation layer, and it is high that the method has source of the gas utilance, and growth rate is fast, and boundary defect state is few.
The preparation method of a kind of heterojunction crystal silicon solar battery passivation layer of the present invention, comprising:
Adopt hot filament CVD, using silane as silicon source, using ammonia as nitrogenous source, air pressure is 0.2Pa ~ 10Pa, and underlayer temperature is 150 DEG C ~ 300 DEG C, and hot-wire temperature is 1800 DEG C ~ 2200 DEG C, the distance of substrate and heated filament is 3 ~ 10cm, and thickness is 2 ~ 10nm, obtained hydrogenated silicon nitride layer;
Or, adopt hot filament CVD, using silane as silicon source, using ammonia as nitrogenous source, using nitrogen oxide or carbon dioxide as oxygen source, air pressure is 0.2Pa ~ 10Pa, underlayer temperature is 150 DEG C ~ 300 DEG C, and hot-wire temperature is 1800 DEG C ~ 2200 DEG C, and the distance of substrate and heated filament is 3 ~ 10cm, thickness is 2 ~ 10nm, obtained hydrogenated silicon oxynitride layer.
For improving the performance of prepared passivation layer, described hydrogenated silicon nitride layer or hydrogenated silicon oxynitride layer carry out annealing in process: under inert gas or hydrogen shield atmosphere, or in vacuum environment, in 200 ~ 600 DEG C of insulation 1 ~ 4h.
Beneficial effect
Compared to use plasma-assisted chemical vapour deposition legal system for passivation layer, it is high that the present invention has source of the gas utilance, growth rate is fast, the features such as boundary defect state is few, and because the H content in silicon thin film prepared by the present invention is higher, so the passivation effect of the film of preparation is better than the standby film of plasma-assisted chemical vapour deposition legal system, be conducive to the raising of hetero-junction solar cell efficiency.
Accompanying drawing explanation
Fig. 1 is the heterojunction crystal silicon battery structural representation of two-sided heterojunction structure;
Fig. 2 is the heterojunction crystal silicon battery structural representation of one side heterojunction structure;
Wherein, 1 is metal grid lines; 2 is tco layers; 3 is emitters; 4 is passivation layers; 5 is crystal silicon chips; 6 is passivation layers; 7 is BSF layers; 8 is metal electrode layers.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment 1
Two-sided heterojunction crystal silicon solar battery as shown in Figure 1, adopt P-type crystal silicon chip, reaction chamber is put into after carrying out cleaning and texturing process in surface, respectively at the hydrogenated silicon nitride layer that the two sides of crystal silicon chip deposition 5nm is thick, 4 layers in corresponding diagram 1 and 6 layers, adopt silane and ammonia as source of the gas, heated filament is 5.0cm to the distance of substrate, hot-wire temperature is 2000 DEG C, silicon 200 DEG C, deposition pressure 1.0Pa; Carry out 300 DEG C subsequently, be incubated the vacuum annealing process of 1 hour; Then adopt the method for plasma-assisted chemical vapour deposition on silicon chip, deposit emitter layer and BSF layer, material adopts the hydrogenated amorphous silicon layer of the phosphorus doping that 15nm is thick and the thick boron doped hydrogenated amorphous silicon layer of 12nm respectively; Adopt the method for magnetron sputtering to distinguish the two sides deposition tco layer of silicon chip again, material adopts the ITO layer that 200nm is thick again; Finally adopt the method preparation conduction grid line of silk screen printing, material adopts low-temperature silver slurry, carries out 120 DEG C after printing, the annealing in process of insulation 10min.
Wherein the hydrogenated silicon nitride layer of annealed process can the dangling bonds of good passivation surface of crystalline silicon, and the defect in part hydrogen trap to silicon chip in passivation silicon chip.Again because this layer thickness only has 5nm, the photogenerated current that illumination produces passes by tunnelling mode, can not affect the conduction of battery.So this embodiment obtains the heterojunction crystal silicon battery of high conversion efficiency.
Embodiment 2
One side heterojunction crystal silicon solar battery as shown in Figure 2, adopts N-type silicon chip, and after cleaning and texturing is carried out on surface, first hot evaporation one deck Al film (in corresponding diagram 28 layers) overleaf, forms effective BSF layer after 600 DEG C of short annealings; Slice, thin piece is put into reaction chamber, the hydrogenated silicon oxynitride layer after deposition one deck 6nm, adopt silane, ammonia and nitrogen oxide as source of the gas, heated filament is 5.5cm to substrate distance, and hot-wire temperature is 2000 DEG C, silicon 200 DEG C, deposition pressure 2.0Pa; Carry out 300 DEG C subsequently, be incubated the vacuum annealing process of 1 hour; The method of hot-wire chemical gas-phase deposition is adopted to deposit the thick boron doped amorphous silicon layer of one deck 20nm, as the emitter of heterojunction solar cell subsequently; Magnetron sputtering method is adopted to deposit the ITO of one deck 200nm as tco layer; Adopt the method for silk screen printing to prepare the gate line electrode of battery, raw material adopts low-temperature silver slurry, carries out 120 DEG C after printing, the annealing in process of insulation 10min.
Hydrogenated silicon oxynitride layer in this embodiment further can be optimized the performance of passivation layer by the adjustment of composition, improves the passivation effect of passivation layer, thus optimizes the performance of heterojunction crystal silicon solar battery.
Claims (1)
1. a preparation method for heterojunction crystal silicon solar battery passivation layer, comprising:
Adopt hot filament CVD, using silane as silicon source, using ammonia as nitrogenous source, using nitrogen oxide or carbon dioxide as oxygen source, air pressure is 0.2Pa ~ 10Pa, and underlayer temperature is 150 DEG C ~ 300 DEG C, hot-wire temperature is 1800 DEG C ~ 2200 DEG C, the distance of substrate and heated filament is 3 ~ 10cm, and thickness is 2 ~ 10nm, obtained hydrogenated silicon oxynitride layer; Described hydrogenated silicon oxynitride layer carries out annealing in process: under inert gas or hydrogen shield atmosphere, or in vacuum environment, in 200 ~ 600 DEG C of insulation 1 ~ 4h.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI474488B (en) * | 2012-09-21 | 2015-02-21 | Ind Tech Res Inst | Solar cell |
| CN103383975A (en) * | 2013-06-20 | 2013-11-06 | 国电光伏有限公司 | Two-sided passivation efficient heterojunction battery and manufacturing method thereof |
| JP6655791B2 (en) * | 2016-08-25 | 2020-02-26 | パナソニックＩｐマネジメント株式会社 | Solar cell and method of manufacturing the same |
| CN107665928A (en) * | 2017-09-22 | 2018-02-06 | 浙江晶科能源有限公司 | A kind of method of crystal silicon solar batteries surface passivation |
| CN109273558B (en) * | 2018-08-27 | 2020-08-11 | 横店集团东磁股份有限公司 | Preparation method of chain wet black silicon battery piece with high conversion efficiency |
| CN109449227B (en) * | 2018-12-13 | 2023-12-15 | 江苏爱康能源研究院有限公司 | Crystalline silicon heterojunction solar cell electrode structure with laminated intrinsic layer and preparation method thereof |
| FR3098343B1 (en) * | 2019-07-01 | 2021-06-04 | Commissariat Energie Atomique | Passivation process |
| CN115241326B (en) * | 2022-07-26 | 2024-06-04 | 拉普拉斯(无锡)半导体科技有限公司 | Solar cell passivation structure, preparation method, preparation device and application thereof |
| CN115233184A (en) * | 2022-07-26 | 2022-10-25 | 拉普拉斯(无锡)半导体科技有限公司 | Hydrogenated amorphous silicon oxide film, preparation method and application thereof |
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| WO2009061322A1 (en) * | 2007-11-09 | 2009-05-14 | Midwest Research Institute | Low-temperature junction growth using hot-wire chemical vapor deposition |
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Effective date of registration: 20160812 Address after: 225400 Jiangsu city of Taizhou Province Branch Road, Taixing city high tech Industrial Park on the west side Patentee after: China wisdom (Taixing) Power Technology Co., Ltd. Address before: 201108 Shanghai, Minhang District Jin Road, room 4299, No. 208 Patentee before: Shanghai CIIC Optical Fiber Communication Co., Ltd. |