CN102593026B - The method of the coefficient of coup of measure floating gate device - Google Patents
The method of the coefficient of coup of measure floating gate device Download PDFInfo
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- CN102593026B CN102593026B CN201210049220.4A CN201210049220A CN102593026B CN 102593026 B CN102593026 B CN 102593026B CN 201210049220 A CN201210049220 A CN 201210049220A CN 102593026 B CN102593026 B CN 102593026B
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Abstract
A kind of method of the coefficient of coup of measure floating gate device, by the port corresponding to the control gate of floating-gate device, selection grid, source region, Semiconductor substrate is measured two-by-two, obtain the grid keeping corresponding cause leakage current constant in the case of, relational expression between the voltage variety of two corresponding ports, according to the plurality of relational expression, obtain control gate, select grid, source region, the Semiconductor substrate coefficient of coup respectively and between floating boom.The method of the measure floating gate device of the present invention is simple, by multiple relational expressions, solves multiple unknown number, can calculate the element adjacent with the floating-gate device coefficient of coup to it easily and effectively；Only needing 23 test ports for measuring the test equipment of the coefficient of coup of described floating-gate device, the requirement to described test equipment is relatively low.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to the coupled systemes of a kind of measure floating gate device
The method of number.
Background technology
The grid surrounded by silicon dioxide insulating layer completely in floating-gate device, without drawing outside wire, in suspension
State, is referred to as floating boom.Common floating-gate device such as nonvolatile memory, even if in power failure
After remain to keep the information in memory element, be widely used in every field, such as embedded system,
PC and peripheral hardware, telecommunications switch, cell phone, network interconnection device, voice, image, data storage
Series products etc..
Refer to Fig. 1, the nonvolatile memory of prior art includes (for convenience, only illustrating in figure
One memory element of nonvolatile memory):
Semiconductor substrate 100；
Being positioned at the grid structure on described Semiconductor substrate 100 surface, described grid structure includes the most discrete
First sub-grid structure (sign) and the second sub-grid structure (sign), and both pass through interlayer
Dielectric layer 103 is isolated, wherein, described first sub-grid structure include the first insulating barrier 105, be positioned at described
The floating boom (floating gate) 107 on the first insulating barrier 105 surface, it is positioned at the second of described floating boom 107 surface
Insulating barrier 109 and be positioned at the control gate (control gate) 111 on described second insulating barrier 109 surface；
Described second sub-grid structure includes the 3rd insulating barrier 113 and is positioned at the choosing on described 3rd insulating barrier 113 surface
Select grid 115；
Laying respectively at source electrode 101 and the drain electrode 102 of described grid structure both sides, wherein said source electrode 101 is positioned at
First sub-grid structure side, and be connected with the first conductive plunger 117, described drain electrode 102 is positioned at the second son
Grid structure side, and be connected with the second conductive plunger 119；
Wordline (not shown), electrically connects with described selection grid 115, is used for selecting corresponding memory element；
Bit line (not shown), electrically connects, for reading writing information to described with described second conductive plunger 119
Memory element.
Due to floating boom 107 periphery element control gate 111, select grid 115, source electrode 101, first to conduct electricity to insert
Plug 117, Semiconductor substrate 100, drain electrode the 102, second conductive plunger 119 etc. all have coupling to floating boom 107
Effect, therefore, although floating boom 107 is not directly connected with external circuit, but when control gate 111, choosing
Select grid 115, source electrode the 101, first conductive plunger 117, Semiconductor substrate 100, drain electrode the 102, second conduction
During one or more applying voltage in connector 119 port such as grade, floating boom 107 also has certain voltage,
Cause the grid in floating-gate device to send a telegraph stream to change, wayward, thus cause the performance of floating-gate device
Unstable.
In order to make the stable performance of floating-gate device, one of them critically important factor makes in floating-gate device exactly
Grid to send a telegraph stream little, and keep constant.How to make the grid in floating-gate device cause current constant, measure
To the coefficient of coup (mutual inductance between two circuit and the electricity of these two circuit between floating boom 107 and each element
The ratio of the geometrical mean of sense) become most important.
But, the method that prior art measures the coefficient of coup is complex, or can only record floating boom and choosing
Select the coefficient of coup between grid, or to need to test all element institutes having coupling with floating boom right simultaneously
The port answered, method of testing is complicated, and the requirement to test equipment is the highest, the most simple and effective measurement
In floating-gate device, the coefficient of coup between floating boom and each element becomes the problem needing solution badly.
Summary of the invention
The problem that the embodiment of the present invention solves is to provide the method for the coefficient of coup of a kind of measure floating gate device,
Can the coefficient of coup between floating boom and each element in simple and effective measure floating gate device.
For solving the problems referred to above, the method for the coefficient of coup of the measure floating gate device of the embodiment of the present invention includes:
Semiconductor substrate is provided；Described semiconductor substrate surface is formed with grid structure, described grid structure
Including the first the most discrete sub-grid structure and the second sub-grid structure, and both pass through interlayer dielectric layer
Isolation, wherein, described first sub-grid structure include being positioned at interlayer dielectric layer surface the first insulating barrier,
It is positioned at the floating boom of described first surface of insulating layer, is positioned at second insulating barrier on described floating boom surface, Yi Jiwei
Control gate in described second surface of insulating layer；Described second sub-grid structure includes being positioned at interlayer dielectric layer
3rd insulating barrier on surface and the selection grid being positioned at described 3rd surface of insulating layer；Described grid structure both sides
Semiconductor substrate in be formed with source region and drain region；
To control gate, select the port corresponding to grid, source region, Semiconductor substrate to measure two-by-two, obtain
The grid that must keep corresponding cause leakage current constant in the case of, the voltage variety of two corresponding ports it
Between relational expression；
According to the plurality of relational expression, obtain control gate, select grid, source region, Semiconductor substrate respectively with
The coefficient of coup between floating boom.
Alternatively, described to control gate, select the port corresponding to grid, source region, Semiconductor substrate to carry out
The method measured two-by-two includes:
Selection grid and Semiconductor substrate are placed in floating state, execute at the port corresponding to control gate and source region
Making alive, measures the first grid and causes leakage current, adjust respectively and put on port corresponding to control gate and source region
Voltage, it is thus achieved that when keeping first grid cause leakage current constant, the voltage variety of the port corresponding to control gate
And the first relational expression between the voltage variety of the port corresponding to source region: VControl×CR1+VSource 1×CR4=0,
Wherein, VControlThe voltage variety of the port corresponding to control gate, VSource 1Hold corresponding to corresponding source region
The voltage variety of mouth, CR1For the coefficient of coup between control gate and floating boom, CR4For between source region and floating boom
The coefficient of coup；
Apply constant voltage at the port corresponding to control gate, select the end corresponding to grid and source region simultaneously
Mouth applies voltage, measures second gate and causes leakage current, and adjustment puts on and selects grid and the corresponding end of source region respectively
The voltage of mouth, it is thus achieved that when keeping second gate cause leakage current constant, select the change in voltage of port corresponding to grid
Amount and source region corresponding to port voltage variety between the second relational expression: VChoosing×CR2+VSource 2×CR4=0,
Wherein, VChoosingFor selecting the voltage variety of the port corresponding to grid, VSource 2Hold corresponding to corresponding source region
The voltage variety of mouth, CR2For selecting the coefficient of coup between grid and floating boom；
Constant voltage is applied, at the end corresponding to Semiconductor substrate and source region at the port corresponding to control gate
Mouth applies voltage, measures the 3rd grid and causes leakage current, and adjustment puts on Semiconductor substrate and source region is right respectively
The voltage of the port answered, it is thus achieved that when keeping the 3rd grid cause leakage current constant, Semiconductor substrate corresponding ports
The 3rd relational expression: V between port voltage variable quantity corresponding to voltage variety and source regionSubstrate×CR3+VSource
3×CR4=0, wherein, VSubstrateThe voltage variety of the port corresponding to Semiconductor substrate, VSource 3For accordingly
Source region corresponding to the voltage variety of port, CR3For the coefficient of coup between Semiconductor substrate and floating boom.
Alternatively, described constant voltage is 0V or 1～2V.
Alternatively, the electricity port corresponding to control gate, selection grid, source region, Semiconductor substrate applied
Pressure is for-2～-4V.
Alternatively, the 4th relational expression: CR is also included1+CR2+CR3+CR4=1.
Alternatively, also include: the first conductive plunger, be connected with described source electrode；Second conductive plunger, with
Described drain electrode is connected；Wordline, electrically connects with described second sub-grid structure, is used for selecting to store accordingly
Unit；Bit line, electrically connects and vertical with described wordline with described second conductive plunger, is used for reading and writing letter
Breath is to described memory element.
Compared with prior art, embodiments of the invention have the advantage that
To control gate, select the port corresponding to grid, source region, Semiconductor substrate to measure two-by-two, obtain
The grid that must keep corresponding cause leakage current constant in the case of, the voltage variety of two corresponding ports it
Between relational expression, described relational expression includes the coefficient of coup between corresponding ports and floating boom；According to institute
State multiple relational expression, obtain control gate, select grid, source region, Semiconductor substrate respectively and between floating boom
The coefficient of coup.On the one hand, the method for measure floating gate device is simple, by multiple relational expressions, solves multiple
Unknown number, can calculate the element adjacent with the floating-gate device coefficient of coup to it easily and effectively；
On the other hand, in embodiments of the invention, the test of the coefficient of coup for measuring described floating-gate device sets
For only needing 2-3 test port, the requirement to described test equipment is relatively low.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the memory element of the nonvolatile memory of prior art；
Fig. 2 is the schematic flow sheet of the method for the coefficient of coup of the measure floating gate device of the embodiment of the present invention.
Detailed description of the invention
As described in background, the method for the coefficient of coup of the measure floating gate device of prior art is the most multiple
Miscellaneous, the requirement to test equipment is the highest, it is impossible to floating boom and each unit in simple and effective measure floating gate device
The coefficient of coup between part.
Through research, inventor finds the method for the coefficient of coup of a kind of measure floating gate device, the most only needs
To measure the port of 2-3 element simultaneously, i.e. can get floating boom and the coupled systemes of each element in floating-gate device
Number.Not only method of testing is simple, and less demanding to test equipment, can simple and effective obtain
The coefficient of coup between floating boom and each element in floating-gate device.
Refer to Fig. 2, the method for the coefficient of coup of measure floating gate device in embodiments of the invention, including:
Step S201, it is provided that Semiconductor substrate；Described semiconductor substrate surface is formed with grid structure, institute
State grid structure and include the sub-grid structure of the most discrete first and the second sub-grid structure, and both pass through
Interlayer dielectric layer is isolated, and wherein, described first sub-grid structure includes being positioned at the of interlayer dielectric layer surface
One insulating barrier, be positioned at described first surface of insulating layer floating boom, be positioned at described floating boom surface second insulation
Layer and be positioned at the control gate of described second surface of insulating layer；Described second sub-grid structure includes being positioned at
3rd insulating barrier on interlayer dielectric layer surface and the selection grid being positioned at described 3rd surface of insulating layer；Described grid
Source region and drain region it is formed with in the Semiconductor substrate of electrode structure both sides；
Step S203, to control gate, selects the port corresponding to grid, source region, Semiconductor substrate to carry out two
Two measure, it is thus achieved that the grid keeping corresponding cause leakage current constant in the case of, the electricity of two corresponding ports
Relational expression between pressure variable quantity；
Step S205, according to the plurality of relational expression, obtains control gate, selects grid, source region, quasiconductor
The substrate coefficient of coup respectively and between floating boom.
Coupling in an embodiment of the present invention, as a example by nonvolatile memory, to measure floating gate device
The method of coefficient carries out exemplary illustrated.
Concrete, refer to Fig. 1, it is provided that nonvolatile memory, the storage of described nonvolatile memory
Unit includes:
Semiconductor substrate 100；
Being positioned at the grid structure on described Semiconductor substrate 100 surface, described grid structure includes the most discrete
First sub-grid structure (sign) and the second sub-grid structure (sign), and both pass through interlayer
Dielectric layer 103 is isolated；
Laying respectively at source electrode 101 and the drain electrode 102 of described grid structure both sides, wherein said source electrode 101 is positioned at
First sub-grid structure side, and be connected with the first conductive plunger 117, described drain electrode 102 is positioned at the second son
Grid structure side, and be connected with the second conductive plunger 119；
Wordline (not shown), electrically connects with described second sub-grid structure, is used for selecting to store accordingly
Unit；
Bit line (not shown), electrically connects and vertical with described wordline with described second conductive plunger 119,
For reading writing information to described memory element.
Wherein, described first sub-grid structure includes the first insulating barrier 105, is positioned at described first insulating barrier
The floating boom (floating gate) 107 on 105 surfaces, be positioned at described floating boom 107 surface the second insulating barrier 109,
And it is positioned at the control gate (control gate) 111 on described second insulating barrier 109 surface；Described second son
Grid structure includes the 3rd insulating barrier 113 and is positioned at the selection grid 115 on described 3rd insulating barrier 113 surface,
Described wordline electrically connects with described selection grid 115.
Through research, inventor finds, due to control gate 111, selection grid 115, source electrode 101, partly leads
Body substrate 100, drain electrode 102 are all insulated with floating boom 107, described control gate 111, selection grid 115, source
Pole 101, Semiconductor substrate 100, drain electrode 102 constitute electric capacity with floating boom 107 respectively, when control gate 111,
Select grid 115, source electrode the 101, first conductive plunger 117, Semiconductor substrate 100, drain electrode 102, second
During one or more applying voltage in conductive plunger 119 port such as grade, due to the coupling of electric capacity, floating
Though grid 107 are not directly connected with external circuit, also tool on floating boom 107 can be made by above-mentioned coupling
There is certain voltage.
After further research, inventor finds, from the point of view of discrete component, floating boom 107 is coupled by it
Make floating boom 107 with voltage, grid can be affected and cause leakage current, but for multiple elements, permissible
By controlling the voltage of each element, the impact making each element produce the coupling of floating boom 107 is mutually supported
Disappear, so that the grid of floating-gate device cause leakage current and keep constant.To this end, firstly the need of determine each element with
The coefficient of coup of floating boom 107, effectively to control grid cause leakage current (the Gate induced drain in floating-gate device
Leakage, GIDL) constant.
But, owing to it is had the element of coupling more by floating boom 107 periphery, described grid are caused electric leakage
The element element that predominantly distance floating boom 107 is nearer that stream impact is bigger, the coupling i.e. and between floating boom 107
The element that syzygy number is bigger.In an embodiment of the present invention, control gate 111, selection grid 115, quasiconductor
Close together between substrate 100, source electrode 101 and floating boom 107, coupling is relatively big, and drain 102 by
In from floating boom 107 farther out, coupling is less.
In embodiments of the invention, mainly measure and floating boom 107 is coupled bigger several elements and floating boom 107
Between the coefficient of coup.To control gate 111, select grid 115, source region 101, Semiconductor substrate 100 institute
Corresponding port is measured two-by-two, it is thus achieved that the grid keeping corresponding cause leakage current constant in the case of, institute is right
Relational expression between the voltage variety of two ports answered.
Incorporated by reference to reference to Fig. 1 and Fig. 2, in embodiments of the invention, to control gate 111, select grid 115,
Port corresponding to source region 101, Semiconductor substrate 100 is measured two-by-two, it is thus achieved that the grid keeping corresponding cause
In the case of leakage current is constant, the method for the relational expression between the voltage variety of two corresponding ports,
Including:
First, selection grid 115 and Semiconductor substrate 100 are placed in floating state, in control gate 111 and source
Port corresponding to district 101 applies voltage, measures the first grid and causes leakage current (GIDL1), in order to keep the
It is constant that one grid cause leakage current, when the voltage of the port adjusted corresponding to control gate 111, and source region 101 institute
The voltage of corresponding port also can occur respective change, it is thus achieved that when first grid cause leakage current is constant, control gate
The voltage variety V of the port corresponding to 111ControlVoltage variety V with the port corresponding to source region 101Source 1Between the first relational expression: VControl×CR1+VSource 1×CR4=0, wherein, VControlRight for control gate 111
The voltage variety of the port answered, VSource 1The voltage variety of port corresponding to corresponding source region 101,
CR1For the coefficient of coup between control gate 111 and floating boom 107, CR4For between source region 101 and floating boom 107
The coefficient of coup.
Concrete, select the port of grid 115 and Semiconductor substrate 100 correspondence not apply voltage, controlling
The port of grid 111 correspondence applies-2V voltage, applies-4V voltage at the port corresponding to source region 101, surveys
It is 1nA that the first grid between amount control gate 111 and source region 101 causes leakage current (GIDL1), then changes
The voltage of the port of control gate 111 correspondence, is adjusted to-3V by it by-2V, measures and causes in the described first grid
Under conditions of leakage current is constant, the voltage of the port of source region 101 correspondence.Such as, the first grid is kept to cause leakage
Electric current 1nA is constant, and the voltage of the port of source region 101 correspondence needs to be adjusted to-3.5V, i.e. control gate 111
The voltage variety V of corresponding portControl=-1V, the voltage variety V of the port corresponding to source region 101Source 1=0.5V, the first relational expression is-1 × CR1+0.5×CR4=0.
Secondly, apply constant voltage at the port corresponding to control gate 111, select grid 115 and source simultaneously
Port corresponding to district 101 applies voltage, measures second gate and causes leakage current (GIDL2), it is thus achieved that keep the
When two grid cause leakage currents are constant, the voltage variety V of selection port corresponding to grid 115ChoosingWith source region 101
The voltage variety V of corresponding portSource 2Between the second relational expression: VChoosing×CR2+VSource 2×CR4=0,
Wherein, VChoosingFor selecting the voltage variety of the port corresponding to grid 115, VSource 2For corresponding source region 101
The voltage variety of corresponding port, CR2For selecting the coefficient of coup between grid 115 and floating boom 107.
Concrete, port corresponding to control gate 111 applies constant 1V voltage, such as 0V or
1～2V, the port of Semiconductor substrate 100 correspondence does not apply voltage, executes at the port selecting grid 115 correspondence
Add-2V voltage, apply-4V voltage at the port corresponding to source region 101, record selection grid 115 and source region
It is 1.5nA that second gate between 101 causes leakage current (GIDL2), then changes and selects grid 115 correspondence
The voltage of port, is adjusted to-3V by it by-2V, measures and causes leakage current constant (GIDL2) at described second gate
Under conditions of, the voltage of the port of source region 101 correspondence.Such as, second gate is kept to cause leakage current 1.5nA
Constant, the voltage of the port of source region 101 correspondence needs to be adjusted to-3V, i.e. selects the end corresponding to grid 115
The voltage variety V of mouthChoosing=-1V, the voltage variety V of the port corresponding to source region 101Source 2=1V, the
Two relational expressions are-1 × CR2+1×CR4=0.
Finally, apply constant voltage at the port corresponding to control gate 111, simultaneously in Semiconductor substrate 100
Apply voltage with the port corresponding to source region 101, measure the 3rd grid and cause leakage current (GIDL3), it is thus achieved that protect
Hold the 3rd grid cause leakage current constant time, the voltage variety V of the port of Semiconductor substrate 100 correspondenceSubstrateWith
The voltage variety V of the port corresponding to source region 101Source 3Between the 3rd relational expression: VSubstrate×CR3+VSource
3×CR4=0, VSubstrateThe voltage variety of the port corresponding to Semiconductor substrate 100, VSource 3For accordingly
The voltage variety of port, CR corresponding to source region 1013For the coupling between Semiconductor substrate 100 and floating boom 107
Syzygy number.
It should be noted that in an embodiment of the present invention, partly leading although described 3rd grid cause leakage current
Produce between body substrate 100 and source region 101, but the size that described 3rd grid cause leakage current can be by floating boom 107
On the impact of voltage.
Concrete, port corresponding to control gate 111 applies constant 1V voltage, such as 0V or
1～2V, select the port of grid 115 correspondence not apply voltage, the port of Semiconductor substrate 100 correspondence applies
-2V voltage, applies-4V voltage at the port corresponding to source region 101, records Semiconductor substrate 100 and source
It is 1.2nA that the 3rd grid between district 101 cause leakage current (GIDL3), then changes Semiconductor substrate 100
The voltage of corresponding port, is adjusted to-3V by it by-2V, measures at described 3rd grid cause leakage current constant
(GIDL3) under conditions of, the voltage of the port of source region 101 correspondence.Such as, second gate is kept to cause electric leakage
1.2nA is constant for stream, and the voltage of the port of source region 101 correspondence needs to be adjusted to-2V, i.e. Semiconductor substrate 100
The voltage variety V of corresponding portChoosing=-1V, the voltage variety V of port corresponding to source region 101Source 2=2V,
3rd relational expression is-1 × CR3+2×CR4=0.
It should be noted that the size of coupling is determined by the coefficient of coup, according to the definition of the coefficient of coup:
Mutual inductance between two circuit and the ratio of the geometrical mean of the inductance of these two circuit, be appreciated that element
The electric capacity constituted with floating boom with this element with the coefficient of coup of floating boom and the ratio of the total capacitance of floating-gate device have
Closing, in an embodiment of the present invention, the total capacitance of floating-gate device can be approximately equal to control gate 111, select grid
115, the electric capacity sum that source region 101, Semiconductor substrate 100 are constituted with floating boom 107 respectively, therefore, also
Including the 4th relational expression: the CR implied1+CR2+CR3+CR4=1.
Owing to aforementioned four relational expression is linear function, four unknown number CR1、CR2、CR3、CR4
Can solve very easily.
It should be noted that in other embodiments of the invention, source region 101 port can first be adjusted
Voltage, then adjust the voltage of control gate 111, constant to ensure that the first grid causes leakage current, or adjust again
Select the voltage of grid 115, constant to ensure that second gate causes leakage current, or adjust Semiconductor substrate 100 again
The voltage of corresponding port is constant to ensure that the 3rd grid cause leakage current.
It should be noted that in other embodiments of the invention, it is only necessary to use said method to obtain four
The individual equation with one unknown quantity about each coefficient of coup, can reach to solve the purpose of each coefficient of coup, measurement
Step does not has sequencing.
It should be noted that in other embodiments of the invention, if thinking to obtain more accurately all to floating
Grid have the element of coupling and the coefficient of coup of floating boom, it is also possible to use said method, obtain more coupling
Syzygy number and the relational expression of voltage variety, to solve all element and floating booms having coupling with floating boom
The coefficient of coup.
In an embodiment of the present invention, the method for the coefficient of coup of measure floating gate device is relatively simple, permissible
The coefficient of coup obtained in floating-gate device between floating boom and each element easily and effectively.Further, above-mentioned measurement
Method the most only need to measure the port of 2-3 element simultaneously, i.e. can get floating boom and each element in floating-gate device
The coefficient of coup.Not only method of testing is simple, and less demanding to test equipment, can simply have
The coefficient of coup obtained in floating-gate device between floating boom and each element of effect.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appoints
What those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure above
Technical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes off
From the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present invention
Simple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.
Claims (4)
1. the method for the coefficient of coup of a measure floating gate device, it is characterised in that including:
Semiconductor substrate is provided；Described semiconductor substrate surface is formed with grid structure, described grid structure
Including the first the most discrete sub-grid structure and the second sub-grid structure, and both pass through interlayer dielectric layer
Isolation, wherein, described first sub-grid structure include being positioned at interlayer dielectric layer surface the first insulating barrier,
It is positioned at the floating boom of described first surface of insulating layer, is positioned at second insulating barrier on described floating boom surface, Yi Jiwei
Control gate in described second surface of insulating layer；Described second sub-grid structure includes being positioned at interlayer dielectric layer
3rd insulating barrier on surface and the selection grid being positioned at described 3rd surface of insulating layer；Described grid structure both sides
Semiconductor substrate in be formed with source region and drain region；
To control gate, select the port corresponding to grid, source region, Semiconductor substrate to measure two-by-two, obtain
The grid that must keep corresponding cause leakage current constant in the case of, the voltage variety of two corresponding ports it
Between relational expression；
According to multiple relational expressions, obtain control gate, select grid, source region, Semiconductor substrate respectively with floating boom
Between the coefficient of coup；
Described to control gate, select the port corresponding to grid, source region, Semiconductor substrate to measure two-by-two
Method include:
Selection grid and Semiconductor substrate are placed in floating state, execute at the port corresponding to control gate and source region
Making alive, measures the first grid and causes leakage current, adjust respectively and put on port corresponding to control gate and source region
Voltage, it is thus achieved that when keeping first grid cause leakage current constant, the voltage variety of the port corresponding to control gate
And the first relational expression between the voltage variety of the port corresponding to source region: VControl×CR1+VSource 1×CR4=0,
Wherein, VControlThe voltage variety of the port corresponding to control gate, VSource 1Hold corresponding to corresponding source region
The voltage variety of mouth, CR1For the coefficient of coup between control gate and floating boom, CR4For between source region and floating boom
The coefficient of coup；
Apply constant voltage at the port corresponding to control gate, select the end corresponding to grid and source region simultaneously
Mouth applies voltage, measures second gate and causes leakage current, and adjustment puts on and selects grid and the corresponding end of source region respectively
The voltage of mouth, it is thus achieved that when keeping second gate cause leakage current constant, select the change in voltage of port corresponding to grid
Amount and source region corresponding to port voltage variety between the second relational expression: VChoosing×CR2+VSource 2×CR4=0,
Wherein, VChoosingFor selecting the voltage variety of the port corresponding to grid, VSource 2Hold corresponding to corresponding source region
The voltage variety of mouth, CR2For selecting the coefficient of coup between grid and floating boom；
Constant voltage is applied, at the end corresponding to Semiconductor substrate and source region at the port corresponding to control gate
Mouth applies voltage, measures the 3rd grid and causes leakage current, and adjustment puts on Semiconductor substrate and source region is right respectively
The voltage of the port answered, it is thus achieved that when keeping the 3rd grid cause leakage current constant, Semiconductor substrate corresponding ports
The 3rd relational expression: V between port voltage variable quantity corresponding to voltage variety and source regionSubstrate×CR3+VSource 3×CR4=0, wherein, VSubstrateThe voltage variety of the port corresponding to Semiconductor substrate, VSource 3For accordingly
Source region corresponding to the voltage variety of port, CR3For the coefficient of coup between Semiconductor substrate and floating boom；
Also include the 4th relational expression: CR1+CR2+CR3+CR4=1.
2. the method for the coefficient of coup of measure floating gate device as claimed in claim 1, it is characterised in that described
Constant voltage is 0V or 1～2V.
3. the method for the coefficient of coup of measure floating gate device as claimed in claim 1, it is characterised in that to control
Grid processed, the voltage selecting the port corresponding to grid, source region, Semiconductor substrate to apply are-2～-4V.
4. the method for the coefficient of coup of measure floating gate device as claimed in claim 1, it is characterised in that also wrap
Include: the first conductive plunger, be connected with described source region；Second conductive plunger, is connected with described drain region；
Wordline, electrically connects with described second sub-grid structure, is used for selecting corresponding memory element；Bit line,
Electrically connect and vertical with described wordline with described second conductive plunger, for reading writing information to described in deposit
Storage unit.
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| US5864501A (en) * | 1996-11-04 | 1999-01-26 | Hyundai Electronics Industries Co., Ltd. | Test pattern structure for endurance test of a flash memory device |
| CN101154666A (en) * | 2006-09-28 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor memory device and manufacturing method thereof |
| CN101866691A (en) * | 2010-04-29 | 2010-10-20 | 上海宏力半导体制造有限公司 | Method for obtaining capacitive coupling rate of flash memory cell |
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|---|---|---|---|---|
| US5912842A (en) * | 1995-11-14 | 1999-06-15 | Programmable Microelectronics Corp. | Nonvolatile PMOS two transistor memory cell and array |
| JP4972272B2 (en) * | 2004-03-30 | 2012-07-11 | セイコーインスツル株式会社 | Floating gate nonvolatile memory |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864501A (en) * | 1996-11-04 | 1999-01-26 | Hyundai Electronics Industries Co., Ltd. | Test pattern structure for endurance test of a flash memory device |
| CN101154666A (en) * | 2006-09-28 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor memory device and manufacturing method thereof |
| CN101866691A (en) * | 2010-04-29 | 2010-10-20 | 上海宏力半导体制造有限公司 | Method for obtaining capacitive coupling rate of flash memory cell |
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