CN102590949A - Side-coupled dual-channel optical waveguide transmission system for photonic crystal - Google Patents
Side-coupled dual-channel optical waveguide transmission system for photonic crystal Download PDFInfo
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- CN102590949A CN102590949A CN2012100219433A CN201210021943A CN102590949A CN 102590949 A CN102590949 A CN 102590949A CN 2012100219433 A CN2012100219433 A CN 2012100219433A CN 201210021943 A CN201210021943 A CN 201210021943A CN 102590949 A CN102590949 A CN 102590949A
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Abstract
A side-coupled dual-channel optical waveguide transmission system for a photonic crystal relates to a microstructural photonic crystal element in the field of optical technology, and solves the problem of large scattering resulting from high roughness of the existing photonic crystal waveguide. An efficient coupling structure for the photonic crystal waveguide and a traditional optical device or an external light source is provided. The system comprises a waveguide layer, a low refractive index buried layer and a substrate layer, wherein the waveguide layer is arranged at the upper part of the low refractive index buried layer, the lower part of the low refractive index buried layer is connected with the substrate layer; a mode that multiple photonic crystal resonant cavities are connected in parallel is adopted, electromagnetic waves are coupled in a photonic crystal waveguide defect area by a coupling area of a waveguide area II, and the coupling efficiency is high; and as the upper parts of the photonic crystal resonant cavities, corresponding to point defects, are distributed with coupling medium columns, the coupling efficiency is further improved. The whole photonic crystal waveguide is integrated on one substrate without external optical elements, so that a photonic crystal waveguide structure is more compact, is smaller in size and is higher in the integration degree.
Description
Technical field
The present invention relates to a kind of microstructure photonic crystal element in the optical technical field, be specifically related to a kind of photonic crystal limit coupled double channel waveguide transmission system.
Background technology
Photonic crystal is by the material with differing dielectric constant, arranges the artificial microstructure that forms in space periodicity.In recent years; Photoelectric functional device based on photon crystal material has obtained paying close attention to widely; Utilize the forbidden photon band and the photon local characteristic of photonic crystal; Photonic crystal photoelectric devices such as photon crystal wave-guide, wave filter, photoswitch, coupling mechanism have been seen in report, for the realization integrated and all-optical network of extensive photoelectricity in future is laid a good foundation.
Photonic crystal is the artificial microstructure that the medium period property arrangement by different refractivity forms, because Bragg diffraction, electromagnetic wave can be modulated and form band structure when electromagnetic wave was propagated therein, and this band structure is called photonic band gap.Band gap, i.e. photon band gap possibly appear between the photonic band gap.Owing to have no in the band gap attitude to exist, frequency drops on the propagation that is under an embargo of electromagnetic wave in the band gap.If introducing dielectric defective or dielectric are unordered in photonic crystal, photon local phenomenon can appear, in photon band gap, will form the corresponding defects energy level, the light of CF can occur in this defect level.Through in complete 2 D photon crystal, introducing defective, destroy forbidden photon band, introduce defect state, can be used to make the 2 D photon crystal function element.If the inlead defective is promptly removed number row medium post in complete 2 D photon crystal; The electromagnetic wave of corresponding frequencies just can only be propagated in this line defect so; Leaving line defect will decay rapidly, can make photon crystal wave-guide through inlead defective in 2 D photon crystal.
Efficient coupling between realization photon crystal device and traditional optical device or light source has great significance for the realization of following all-optical network.Yet because the photon crystal device size is less, in the coupling process of photon crystal device and traditional optical device or light source, coupling area and coupling efficiency all are difficult to promote.In recent years, method such as method of geometrical optics and evanescent wave coupling is suggested to realize efficient coupling.Method of geometrical optics is through using external geometric optics such as condenser lens and lens fiber to focus the light into the photon crystal device incident end face to realize the method for coupling.Yet it is very difficult wanting to focus the light on the photon crystal device yardstick.In addition, the geometrical optics coupling process does not improve the coupling area of system fundamentally, and too much the introducing of external device can make system architecture complicated, is unfavorable for integrated with other devices.Simultaneously, the caused reflection of external optical device, scattering loss and interpolation loss meeting reduce the coupling efficiency of system.The evanescent wave coupling process utilize evanescent wave to produce and the principle of coupling with light from the top coupled of device to device, thereby improved coupling area greatly.The evanescent wave method also is faced with some problems; External calibration that the graded index fiber that for example uses in the processing of specific graded index fiber, the coupling process and the distance parameter of photon crystal device are difficult to control, needs are accurate and regulating system and external calibration adjustments system are to the problems such as influence of integrated level, and these have all limited the application of evanescent wave coupling process.Therefore, press for that a kind of efficient is high, integrated level is high, simple to operate and can realize photon crystal device the method that efficiently is coupled with traditional optical device or light source.
Summary of the invention
The present invention proposes a kind of photonic crystal limit coupled double channel waveguide transmission system that can realize efficient coupling between photon crystal wave-guide and traditional optical device or external light source.
Photonic crystal limit coupled double channel waveguide transmission system, this system comprises ducting layer, low-refraction buried regions and substrate layer, and ducting layer is positioned at low-refraction buried regions top, and low-refraction buried regions bottom links to each other with substrate layer; It is characterized in that; Said ducting layer comprises waveguide one district, defect area and waveguide two districts; Said waveguide one district is made up of a plurality of medium post periodic arrangement, the joining place distribution delegation defective media post in waveguide one district and waveguide two districts, and this row defective media post constitutes defect area; Said waveguide two district outermost distribution delegation couplant posts; This row couplant post constitutes the coupled zone, and comprises the point defect that a plurality of edges are parallel to the arrangement of defect area direction in waveguide two districts, and each point defect and medium post on every side and outmost couplant post constitute photonic crystal resonant cavity; A plurality of photonic crystal resonant cavities are related, and the corresponding position, point defect top in each photonic crystal resonant cavity is distributed with the second couplant post and the first couplant post successively.
Principle of work of the present invention: the present invention adopts the mode of multi-photon crystal resonator cavity parallel connection, and the coupled zone through waveguide two districts is coupled into the photon crystal wave-guide defect area with electromagnetic wave, thereby reaches the purpose that improves coupling area, the coupling efficiency height; Simultaneously, because the raising of coupling area also is that operations such as prefocus and aligning are provided convenience before the coupling.Because photonic crystal resonant cavity top and point defect corresponding position are distributed with the couplant post, have further improved coupling efficiency.In addition, whole photon crystal wave-guide is integrated on the same substrate, does not need external optical element, makes that photonic crystal waveguide structure is compacter, volume is littler, and has higher integrated level.
Beneficial effect of the present invention: broadside coupled structure is adopted in waveguide of the present invention, has selected a plurality of photonic crystal resonant cavity parallel connections, can when guaranteeing coupling efficiency, be that light source prefocus and alignment function facilitate.Whole in addition photonic crystal limit coupled double channel waveguide transmission system is integrated on the same substrate, does not need external optical element, thereby makes that photonic crystal limit coupled double channel waveguide transmission system is compacter, volume is littler and have higher integrated level.Compare with other coupling process, photonic crystal of the present invention limit coupled double channel waveguide transmission system has the efficient height, volume is little, simple in structure and the integrated level advantages of higher.The exposure of applying electronic bundle adds the processing of ICP lithographic method, makes photonic crystal limit coupled double channel waveguide transmission system that advantages such as machining precision is high, surfaceness is low arranged, and has solved the big problem of bringing because of roughness is higher of scattering.The synchrotron radiation X-ray photoetching technique combined with grinding, polishing technology carries out that remove the marginarium and side dressing, can be in the process of removing the marginarium effective protection photonic crystal limit coupled double channel waveguide transmission system structure.
Description of drawings
Fig. 1 is a photonic crystal of the present invention limit coupled double channel waveguide transmission system main body floor map;
Fig. 2 is photonic crystal of the present invention limit coupled double channel waveguide transmission system waveguide two district's part synoptic diagram;
Fig. 3 a, 3b, 3c are that coupling efficiency is with medium column parameter change curve;
Fig. 4 is a photonic crystal of the present invention limit coupled double channel waveguide transmission system main body schematic three dimensional views;
Fig. 5 is the required reticle synoptic diagram of etching scribe line;
Fig. 6 a～6g is the required scribe line technological process synoptic diagram of preparation scribing;
Fig. 7 a～7f is the technological process synoptic diagram of preparation lanthanum aluminate post;
Fig. 8 a～8f is the technological process synoptic diagram of the strict medium post of processing dimension;
Fig. 9 a～9f removal devices marginarium is to obtain the technological process synoptic diagram of photonic crystal limit coupled double channel waveguide transmission system at last.
Embodiment
Embodiment one, combination Fig. 1 to Fig. 5 explain this embodiment; Photonic crystal limit coupled double channel waveguide transmission system; This system comprises ducting layer, low-refraction buried regions 7 and substrate layer 8, and ducting layer is positioned at low-refraction buried regions 7 tops, and low-refraction buried regions 7 bottoms link to each other with substrate layer 8; Said ducting layer comprises waveguide one district 1, defect area and waveguide two districts 2; Said waveguide one district 1 is made up of a plurality of medium post 9 periodic arrangement; The joining place distribution delegation defective media post 10 in waveguide one district 1 and waveguide two districts 2; This row defective media post constitutes defect area, said waveguide two district outermost distribution delegation couplant posts 12, and this row couplant post constitutes coupled zone 3; And comprise a plurality of edges in waveguide two districts 2 and be parallel to the point defect 6 that defect area 10 directions are arranged, each point defect 6 and medium post 9 on every side and outmost couplant post 12 constitute photonic crystal resonant cavities 4; A plurality of photonic crystal resonant cavity 4 associations, the corresponding position, point defect 6 top in each photonic crystal resonant cavity 4 is distributed with the second couplant post 13 and the first couplant post 11 successively.Said photonic crystal resonant cavity is identical with the photon crystal wave-guide response frequency.
The radius of a plurality of medium posts 9 in the described waveguide of this embodiment one district 1 is r.
The radius r of the described coupled zone of this embodiment medium post 12
4Be greater than or less than the radius r of medium post 9.
The described point defect 6 of this embodiment is r by radius
1 Medium post 5 constitute, defect area is r by radius
5The medium post constitute; r
1With r
5Value identical.
The described point defect 6 of this embodiment is perhaps removed the space that one or more medium posts form for the defective that the radius that in photonic crystal, changes one or more medium posts forms in photonic crystal.
This embodiment is that example to this embodiment elaborate with the lanthanum aluminate post as the medium post to the electromagnetic wave of 1550nm.In conjunction with shown in Figure 2; In order to reach the purpose of coupling; The present invention utilizes the 4 pairs of light beams in five parallel resonance chambeies efficiently to be coupled, and the coupling length of device can be that light source prefocus and alignment function facilitate when guaranteeing coupling efficiency about 15 μ m at this moment.Requirement radius to the lanthanum aluminate post in complete photon crystal structure is optimized in the manufacturing process, and wherein, the lanthanum aluminate post that constitutes photonic crystal limit coupled double channel waveguide transmission system main body is the tetragonal structure, and its lattice period is 510nm.Incident light incident from the coupled zone; Through the first couplant post 11 on five parallel resonance chambeies 4 and top thereof, the efficient coupling of the second couplant post 13; Defect area is advanced in optically-coupled; Be coupled into electromagnetic wave two-way propagation in defect area of defect area, and by the left and right sides passage outgoing simultaneously of photon crystal wave-guide.
For the electromagnetic wave of 1550nm, constitute the medium column radius r=102nm of photon crystal wave-guide main body.
Shown in Fig. 3 a, 3b, 3c:
Radius r when the medium post 5 that constitutes point defect
1=51nm, the radius r of the first couplant post 11
2=120nm, the radius r of the second couplant post 13
3=260nm, the radius r of coupled zone medium post 12
4=230nm, the medium column radius r of defect area 10
5During=51nm, photonic crystal limit coupled double channel waveguide transmission system can realize 95.47% coupling efficiency.
Radius r when the medium post 5 that constitutes point defect
1=51nm, the radius r of the first couplant post 11
2=240nm, the radius r of the second couplant post 13
3=100nm, the radius r of coupled zone medium post 12
4=150nm, the medium column radius r of defect area 10
5During=51nm, photonic crystal limit coupled double channel waveguide transmission system can realize 90.54% coupling efficiency.
Radius r when the medium post 5 that constitutes point defect
1=51nm, the radius r of the first couplant post 11
2=230nm, the radius r of the second couplant post 13
3=100nm, the radius r of coupled zone medium post 12
4=100nm, the medium column radius r of defect area 10
5During=51nm, photonic crystal limit coupled double channel waveguide transmission system can realize 85.9% coupling efficiency.
Radius r when the medium post 5 that constitutes point defect
1=51nm, the radius r of the first couplant post 11
2=80nm, the radius r of the second couplant post 13
3=110nm, the radius r of coupled zone medium post 12
4=110nm, the medium column radius r of defect area 10
5During=51nm, photonic crystal limit coupled double channel waveguide transmission system can realize 82.35% coupling efficiency.
Radius r when the medium post 5 that constitutes point defect
1=51nm, the radius r of the first couplant post 11
2=130nm, the radius r of the second couplant post 13
3=90nm, the radius r of coupled zone medium post 12
4=120nm, the medium column radius r of defect area 10
5During=51nm, photonic crystal limit coupled double channel waveguide transmission system can realize 81.74% coupling efficiency.
As shown in Figure 4, photon crystal wave-guide device of the present invention is that preparation dozens of to hundreds of tactic lanthanum aluminate posts form in substrate.Substrate is made up of silicon dioxide buried regions (low-index layer) 102 and substrate silicon 101.The lanthanum aluminate post is prepared on the silicon dioxide buried regions, lanthanum aluminate post height h
1=220nm, silicon dioxide buried regions thickness h
2=3 μ m, substrate silicon thickness h 3=600 μ m.
Fig. 5 is the required reticle synoptic diagram of etching scribe line.Reticle is that the length of side is the square structure of A=2cm, and square structure is divided into 16 square junior units, and each unit is elongated to be a=0.5cm.The photonic crystal limit coupled double channel waveguide transmission system that is designed is made in the junior unit, can get 16 groups of photonic crystal limit coupled double channel waveguide transmission systems through the scribing single exposure.
Embodiment two, combination Fig. 6 to Fig. 9 explain this embodiment, and this embodiment is the concrete manufacturing process of embodiment one described photonic crystal limit coupled double channel waveguide transmission system:
The first step, the required scribe line of preparation scribing;
(A) be that 600 μ m are thick to substrate silicon 101, clean is carried out in substrate (shown in Fig. 6 a) of growth 3 μ m thick silicon dioxide buried regions 102 on it;
(B) shown in Fig. 6 b, on silicon dioxide buried regions 102, utilize Prepared by Sol Gel Method one deck lanthanum aluminate film 103;
(C) shown in Fig. 6 c, on lanthanum aluminate film 103, making a layer thickness is the photoresist film 104 of 2-3 μ m;
(D) structure that step (C) is completed is dried by the fire before putting into baking oven;
(E) shown in Fig. 6 d, photoresist film 104 is carried out uv-exposure, obtain and the identical figure of the required reticle of etching scribe line;
(F) shown in Fig. 6 e,, obtain making the required photoresist mask structure of scribe line through development, post bake;
(G) shown in Fig. 6 f, the photoresist mask structure that step (F) is made carries out ICP (inductively coupled plasma etching) etching, and etching depth is 4 μ m; Shown in Fig. 6 g, remove photoresist film 104 and obtain scribing sheet groove structures;
Second step, the required mask of preparation ICP etching lanthanum aluminate post;
(H) shown in Fig. 7 a, 7b, on the scribing sheet groove structures that step (G) prepares, making a layer thickness is the photoresist film 201 of 100nm;
(I) structure of step (H) preparation being accomplished is dried by the fire before putting into baking oven;
(J) shown in Fig. 7 c, the photoresist film 201 for preparing is carried out electron beam exposure;
(K) shown in Fig. 7 d,, obtain making the required ICP photoresist mask structure of photonic crystal limit coupled double channel waveguide transmission system agent structure through development, post bake;
In the 3rd step, make photonic crystal limit coupled double channel waveguide transmission system agent structure;
(L) shown in Fig. 7 e, the ICP photoresist mask structure that step (K) is made carries out the ICP etching, and etching depth is 220nm, obtains lanthanum aluminate post 9;
(M) shown in Fig. 7 f, the photoresist on the lanthanum aluminate post 9 is removed, and cleaned;
In the 4th step, the lanthanum aluminate post that requires dimensional accuracy to be higher than (10nm) is processed separately:
(N) shown in Fig. 8 a, 8b, on the photonic crystal waveguide structure that step (M) obtains, apply one deck photoresist 301 as protective seam;
(O) shown in Fig. 8 c, 8d; Photoresist 301 to preparing carries out optical exposure, development; Obtain the photoresist mask structure; Come out in the lanthanum aluminate post of needs processing (comprise coupled zone medium post 12, the first couplant post 11, the second couplant post 13, defect area medium post and constitute the medium post 5 of point defect, among the figure be example with medium post 5) region;
(P) shown in Fig. 8 e, 8f, the lanthanum aluminate post that utilizes FIB (FIB) technology that needs are processed carries out high-precision processing makes it reach required size, removes photoresist;
In the 5th step, remove the marginarium;
(Q) shown in Fig. 9 a, 9b, the device architecture surface-coated PMMA layer 401 that obtains in step (P);
(R) shown in Fig. 9 c, 9d, PMMA layer 401 is carried out the synchrotron radiation X-ray exposure, develops, on the photon crystal wave-guide zone of device architecture, make a protective seam;
(S), promptly obtain 16 photonic crystal waveguide structures that constitute by lanthanum aluminate post 9 according to the scribe line scribing;
(T) shown in Fig. 9 e, the device architecture that step (S) obtains is put into wafer lapping machine, carry out the side with different polishing fluids respectively and grind and polish, removal devices structural edge district also makes device side smooth;
(U) shown in Fig. 9 f, remaining PMMA layer 401 is carried out the synchrotron radiation X-ray exposure, clean through development removal PMMA protective seam and to it then, obtain photonic crystal of the present invention limit coupled double channel waveguide transmission system.
The described electromagnetic wave of this embodiment gets into the coupled system that is made up of a plurality of photonic crystal resonant cavity parallel connections from the coupled zone in waveguide two districts; The electromagnetic wave identical with parallelly connected photonic crystal resonant cavity and photon crystal wave-guide response frequency is coupled the medium post and efficiently is coupled into defect area through several parallelly connected photonic crystal resonant cavities; Because the left-right symmetric property of device, the electromagnetic wave that is coupled into defect area can two-way propagation in defect area, and identical by the electromagnetic wave energy of two passage outgoing about photon crystal wave-guide.The described photonic crystal of this embodiment limit coupled double channel waveguide transmission system also can be used as the waveguide of a kind of type of T efficiently.
The invention is not restricted to above-mentioned embodiment, photon crystal wave-guide also can be its alloytype, like W3 type, W5 type; Middle defect area can be to remove delegation or the formation of multirow medium post in the photonic crystal, perhaps is made up of the delegation or the multirow medium post that are greater than or less than waveguide one district, waveguide two district's medium posts; Waveguide two class mark defectives can be made up of a different medium post of size, also can be made up of a plurality of size different medium posts, also can constitute through removing one or more medium posts; Coupled zone medium post can be greater than or less than other medium posts with first, second couplant column dimension.Therefore, every any simple deformation of on claim 1 technical scheme of the present invention basis, making all the invention is intended within the protection domain.
Claims (5)
1. photonic crystal limit coupled double channel waveguide transmission system, this system comprises ducting layer, low-refraction buried regions (7) and substrate layer (8), and ducting layer is positioned at low-refraction buried regions (7) top, and low-refraction buried regions (7) bottom links to each other with substrate layer (8); It is characterized in that; Said ducting layer comprises waveguide one district (1), defect area and waveguide two districts (2); Said waveguide one district (1) is made up of a plurality of medium posts (9) periodic arrangement, the joining place distribution delegation defective media post (10) in waveguide one district (1) and waveguide two districts (2), and this row defective media post constitutes defect area; Said waveguide two district outermost distribution delegation couplant posts (12); This row couplant post constitutes coupled zone (3), and comprises the point defect (6) that a plurality of edges are parallel to the arrangement of defect area (10) direction in waveguide two districts (2), and each point defect (6) and medium post (9) on every side and outmost couplant post (12) constitute photonic crystal resonant cavity (4); A plurality of photonic crystal resonant cavities (4) association, point defect (6) corresponding position, top in each photonic crystal resonant cavity (4) is distributed with the second couplant post (13) and the first couplant post (11) successively.
2. photonic crystal according to claim 1 limit coupled double channel waveguide transmission system is characterized in that, the radius of a plurality of medium posts (9) in said waveguide one district 1 is r.
3. photonic crystal according to claim 1 limit coupled double channel waveguide transmission system is characterized in that, the radius r of said coupled zone medium post (12)
4Be greater than or less than the radius r of medium post (9).
4. photonic crystal according to claim 1 limit coupled double channel waveguide transmission system is characterized in that said point defect (6) is r by radius
1Medium post (5) constitute, defect area is r by radius
5The medium post constitute; r
1With r
5Value identical.
5. photonic crystal according to claim 1 limit coupled double channel waveguide transmission system; It is characterized in that said point defect (6) is perhaps removed the space that one or more medium posts form for the defective that the radius that in photonic crystal, changes one or more medium posts forms in photonic crystal.
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| CN201210021943.3A CN102590949B (en) | 2012-01-31 | 2012-01-31 | Side-coupled dual-channel optical waveguide transmission system for photonic crystal |
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| CN107359496A (en) * | 2016-04-01 | 2017-11-17 | 三菱电线工业株式会社 | Mode stripper constructs and constructed using the mode stripper transmission method of the laser carried out |
| CN111194422A (en) * | 2017-03-30 | 2020-05-22 | 威福光学有限公司 | Waveguide for augmented reality or virtual reality displays |
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| CN101252407A (en) * | 2008-04-03 | 2008-08-27 | 上海交通大学 | Wave decomposing multiplexer based on two-dimension photon crystal |
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