CN102586858A - Double-crucible device for growing single crystals through induction heating physical vapor phase transfer - Google Patents
Double-crucible device for growing single crystals through induction heating physical vapor phase transfer Download PDFInfo
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- CN102586858A CN102586858A CN2012100942850A CN201210094285A CN102586858A CN 102586858 A CN102586858 A CN 102586858A CN 2012100942850 A CN2012100942850 A CN 2012100942850A CN 201210094285 A CN201210094285 A CN 201210094285A CN 102586858 A CN102586858 A CN 102586858A
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Abstract
A double-crucible device for growing single crystals through induction heating physical vapor phase transfer belongs to the technical field of single crystal growth and particularly relates to a device for growing the single crystals through induction heating physical vapor phase transfer. The double-crucible device comprises a heat preservation drum; an outer crucible is arranged in the heat preservation drum; an inner crucible is arranged in the outer crucible; and single crystal raw materials and seed crystals are arranged in the inner crucible. Compared with the prior art adopting a single crucible, the device has the advantages that the consumption of crucible materials with high melting points can be greatly reduced, and when the inner crucible is taken out, a heat preservation material can not be scraped off, thereby the service life of the heat preservation material is prolonged.
Description
Technical field
The invention belongs to the single crystal growing technical field, particularly relate to the device of induction heating physical vapor transmission growing single-crystal.
Background technology
During induction heating physical vapor transmission method growing single-crystal, need to use materials with high melting point (for example: high purity graphite, metal tantalum, tungsten etc.) to make crucible, be used for splendid attire material source (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface).Generally all be with a crucible (being designated hereinafter simply as " single crucible ") at present, not only made heating element, but also made growth chamber, relatively simple for structure.But in order to satisfy the requirement of heating and temperature, the crucible size that the size of single crucible need be done more requiredly than simple charging is a lot of greatly, and when taking out the monocrystalline that generates, generally can only destroy crucible.Therefore, single crucible can only disposablely use, and this causes, and the consumption of HMP crucible material is big, the crucible cost is high.In addition, single crucible come out of the stove at every turn the time rub the lagging material that some are close to its outer wall easily, need replenish during shove charge once more, even process heat-preservation cylinder again.
Summary of the invention
The technical problem that the present invention will solve is to overcome the disposable use of crucible, the defect of high cost that existing single crucible causes, and a kind of pair of crucible device is provided, and outer crucible wherein can repeatedly use, and easy to operate, cost reduces.
In order to solve the problems of the technologies described above, the invention provides following technical scheme:
The device of a kind of pair of crucible induction heating physical vapor transmission growing single-crystal comprises heat-preservation cylinder, in said heat-preservation cylinder, is provided with outer crucible, in said outer crucible, is provided with interior crucible, and crystal raw material and seed crystal are positioned at crucible.
Crucible is provided with the crucible lid that is used to place seed crystal in said.
The present invention is applicable to the method for all induction heating physical vapor transmission method growing single-crystals, includes but not limited to silit, aluminium nitride AlN.
Apparatus of the present invention are to realize its function like this: during induction heating physical vapor transmission method growing single-crystal, use the co-axial materials with high melting point crucibles of inside and outside two covers (abbreviation " two crucible "), outer crucible is in order to satisfy the requirement of heating and temperature field, and size is bigger; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and size is less.Interior crucible is placed on the outer crucible bottom coaxially, and two crucibles all have the crucible lid to seal separately, and perhaps outer crucible also can not add the crucible lid, so that crucible in taking out.After the growth ending, crucible in from outer crucible, taking out is opened interior crucible, is taken out crystal ingot; And outer crucible is motionless, can repeatedly use.
Compare with the prior art of using single crucible, the present invention not only can significantly reduce the consumption of HMP crucible material, and interior crucible can not rub lagging material when taking out, thereby has prolonged the work-ing life of lagging material.In a word, apparatus of the present invention can be simplified technology, reduce cost.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification sheets, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural representation of the two crucible devices of the present invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein only is used for explanation and explains the present invention, and be not used in qualification the present invention.
Shown in Figure 1; The device of a kind of pair of crucible induction heating physical vapor transmission growing single-crystal; Comprise induction coil 4 and heat-preservation cylinder 1; In heat-preservation cylinder 1, be provided with outer crucible 2, crucible 3 in outer crucible 2, being provided with, crystal raw material 5 (being placed at the bottom of the crucible) is positioned at crucible 3 with seed crystal 6 (being contained in the crucible interior surface).Wherein, interior outer crucible all has the crucible lid to seal separately, and perhaps outer crucible also can not add crucible lid (shown in Figure 1), so that crucible in taking out.
Embodiment 1:
Use the grow single-crystal silicon carbide of 6 inch diameters of apparatus of the present invention and induction heating physical vapor transmission method.Use the co-axial high purity graphite crucibles of inside and outside two covers (being called for short " two crucible "), 200 millimeters of outer crucible internal diameters, 250 millimeters of external diameters, the outside is high 300 millimeters, inner chamber is high 250 millimeters; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and 160 millimeters of internal diameters, 180 millimeters of external diameters, the outside is high 160 millimeters, inner chamber is high 120 millimeters.Interior crucible is placed on the outer crucible bottom coaxially, and interior crucible has the sealing of crucible lid, and outer crucible does not add the crucible lid, so that crucible in taking out.After the growth ending, from outer crucible, take out interior crucible, cut the silit crystal ingot of interior crucible, taking-up 6 inch diameters; And outer crucible is motionless, can recycle.
Embodiment 2:
Use the grow aluminum-nitride single crystal of 1 inch diameter of apparatus of the present invention and induction heating physical vapor transmission method.Use the co-axial tantalum crucibles of inside and outside two covers (being called for short " two crucible "), 41 millimeters of outer crucible internal diameters, 80 millimeters of external diameters, the outside is high 80 millimeters, inner chamber is high 60 millimeters; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and internal diameter is 30 millimeters, 40 millimeters of external diameters, the outside is high 50 millimeters, inner chamber is high 40 millimeters.Interior crucible is placed on the outer crucible bottom coaxially, and interior outer crucible all has the sealing of crucible lid.After the growth ending, open the outer crucible lid, from outer crucible, take out interior crucible, cut the aluminum-nitride single crystal ingot of interior crucible, taking-up 1 inch diameter; And outer crucible is motionless, can recycle.
What should explain at last is: the above is merely the preferred embodiments of the present invention; Be not limited to the present invention; Although the present invention has been carried out detailed explanation with reference to previous embodiment; For a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the device of two crucible induction heating physical vapor transmission growing single-crystals; Comprise heat-preservation cylinder, it is characterized in that: in said heat-preservation cylinder, be provided with outer crucible, in said outer crucible, be provided with interior crucible; Interior outer crucible is coaxial, and crystal raw material and seed crystal are positioned at crucible.
2. the device of according to claim 1 pair of crucible induction heating physical vapor transmission growing single-crystal is characterized in that: crucible is provided with the crucible lid that is used to place seed crystal in said.
3. the device of according to claim 1 and 2 pair of crucible induction heating physical vapor transmission growing single-crystal, it is characterized in that: said carbon monocrystalline is silit or aluminium nitride AlN.
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| CN2012100942850A CN102586858A (en) | 2012-04-01 | 2012-04-01 | Double-crucible device for growing single crystals through induction heating physical vapor phase transfer |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105543966A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Compound insulation structure for single crystal growth of silicon carbide |
| CN105696082A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for annealing in furnace during growth of silicon carbide single crystals by PVT method |
| CN106395770A (en) * | 2016-06-30 | 2017-02-15 | 北京华进创威电子有限公司 | A purifying device and a purifying method for an aluminium nitride raw material |
| CN107829134A (en) * | 2017-11-22 | 2018-03-23 | 北京大学 | A kind of aluminum-nitride single crystal grower and method without seed crystal adhesive technology |
| CN108396384A (en) * | 2018-05-25 | 2018-08-14 | 深圳大学 | A kind of device and method preparing aluminum nitride crystal |
| CN109023513A (en) * | 2018-08-20 | 2018-12-18 | 深圳大学 | Prepare the Crucible equipment and method of aluminum nitride crystal |
| CN110067026A (en) * | 2019-04-26 | 2019-07-30 | 山东天岳先进材料科技有限公司 | A kind of single-crystal silicon carbide and its PVT long crystal method |
| CN110568008A (en) * | 2018-06-06 | 2019-12-13 | 耐驰-仪器制造有限公司 | measuring device and method for the thermal analysis of a sample |
| CN112877771A (en) * | 2021-01-04 | 2021-06-01 | 山西烁科晶体有限公司 | Crucible and method for single crystal growth |
| CN113215660A (en) * | 2021-05-07 | 2021-08-06 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Silicon carbide single crystal growth method capable of reducing heater loss |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105543966A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Compound insulation structure for single crystal growth of silicon carbide |
| CN105696082A (en) * | 2016-04-19 | 2016-06-22 | 北京世纪金光半导体有限公司 | Method for annealing in furnace during growth of silicon carbide single crystals by PVT method |
| CN106395770A (en) * | 2016-06-30 | 2017-02-15 | 北京华进创威电子有限公司 | A purifying device and a purifying method for an aluminium nitride raw material |
| CN107829134B (en) * | 2017-11-22 | 2020-06-26 | 北京大学 | Aluminum nitride single crystal growth device and method without seed crystal bonding technology |
| CN107829134A (en) * | 2017-11-22 | 2018-03-23 | 北京大学 | A kind of aluminum-nitride single crystal grower and method without seed crystal adhesive technology |
| CN108396384A (en) * | 2018-05-25 | 2018-08-14 | 深圳大学 | A kind of device and method preparing aluminum nitride crystal |
| CN110568008A (en) * | 2018-06-06 | 2019-12-13 | 耐驰-仪器制造有限公司 | measuring device and method for the thermal analysis of a sample |
| CN110568008B (en) * | 2018-06-06 | 2022-05-17 | 耐驰-仪器制造有限公司 | Measuring device and method for the thermal analysis of a sample |
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| CN110067026A (en) * | 2019-04-26 | 2019-07-30 | 山东天岳先进材料科技有限公司 | A kind of single-crystal silicon carbide and its PVT long crystal method |
| CN110067026B (en) * | 2019-04-26 | 2020-05-19 | 山东天岳先进材料科技有限公司 | Silicon carbide single crystal and PVT crystal growth method thereof |
| CN112877771A (en) * | 2021-01-04 | 2021-06-01 | 山西烁科晶体有限公司 | Crucible and method for single crystal growth |
| CN113215660A (en) * | 2021-05-07 | 2021-08-06 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Silicon carbide single crystal growth method capable of reducing heater loss |
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Application publication date: 20120718 |