CN102584234B - Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof - Google Patents

Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof Download PDF

Info

Publication number
CN102584234B
CN102584234B CN201210064340.1A CN201210064340A CN102584234B CN 102584234 B CN102584234 B CN 102584234B CN 201210064340 A CN201210064340 A CN 201210064340A CN 102584234 B CN102584234 B CN 102584234B
Authority
CN
China
Prior art keywords
hours
equal
znnb
powder
cuo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210064340.1A
Other languages
Chinese (zh)
Other versions
CN102584234A (en
Inventor
赵敏
童建喜
许赛卿
唐春宝
黄丹
谭金刚
张斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiaxing Jiali Electronic Co., Ltd.
Original Assignee
JIAXING JIALI ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIAXING JIALI ELECTRONIC CO Ltd filed Critical JIAXING JIALI ELECTRONIC CO Ltd
Priority to CN201210064340.1A priority Critical patent/CN102584234B/en
Publication of CN102584234A publication Critical patent/CN102584234A/en
Application granted granted Critical
Publication of CN102584234B publication Critical patent/CN102584234B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses an environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic which has the following formula: Li1+m-nNb1-m-3nTim+4nO3+awt%ZnNb2O6+bwt%MnCO3+cwt%CuO+dwt%Bi2O3+ewt%Li2CO3, wherein m is more than or equal to 0.05 and less than or equal to 0.2, n is more than or equal to 0.05 and less than or equal to 0.175, a is more than or equal to 0 but less than and equal to 10, b is more than or equal to 0 and less than or equal to 4, c is more than 0 and less than or equal to 4, d is more than or equal to 0 and less than or equal to 4, e is more than 0 and less than or equal to 6, and a, b, c, d and e are a mass fraction. In the formula, ZnNb2O3 is added to adjust the frequency temperature coefficient, so that the frequency temperature coefficient of the Li1+m-nNb1-m-3nTim+4nO3 ceramic approaches to zero; and the combined use of MnCO3, CuO, Bi2O3 and Li2O3 which conform to the environmental requirements can reduce the sintering temperature of the Li1+m-nNb1-m-3nTim+4nO3 ceramic to be below 900 DEG C, so as to achieve the effect of co-firing with a high electric conductivity silver electrode and also maintain excellent microwave dielectric property (epsilon is equal to 50 to 75, Qf is more than 4000 GHz). The ceramic material can be applied to manufacture high-pass filters, Baluns, Balun filters and other chip-type multilayer microwave ceramic elements in wireless communication.

Description

A kind of environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof
Technical field
The invention belongs to microwave-medium ceramics field, relate in particular to a kind of environment-friendly type low temperature sintering high-dielectric constant microwave-medium pottery and preparation method thereof.
Background technology
In recent years, develop rapidly along with microelectronics information technology, the needs of complete electronic set aspect miniaturization, portable, multi-functional, digitizing, high frequency and high reliability, high-performance, have promoted the future development of electronic component to microminiaturized, integrated and high frequency.LTCC Low Temperature Co-fired Ceramic(LTCC) technology has realized the design requirementss such as device volume is little, compact construction, multifunction, stable performance, become the mainstream technology of passive integration, become the developing direction in passive device field and the point of economic increase of new components and parts industry.In order to meet microminiaturized needs, to reduce as far as possible the size of device, wherein the size of resonator and the square root of specific inductivity are inversely proportional to, therefore to reduce the size of tank circuit, require specific inductivity to want high, the temperature coefficient of resonance frequency τ that therefore finds high-k, low-loss and be high-quality-factor Qf value (GHz) and go to zero f, LTCC microwave-medium ceramics is people's study hotspot.
Li 2o-Nb 2o 5-TiO 2the M-Phase(Li that system exists 1+m-nnb 1-m-3nti m+4no 3) solid solution range has excellent microwave dielectric property (ε r=50 ~ 78, Qf is up to 9000GHz, τ fcan seriation), be a kind of microwave dielectric material of excellent performance.In addition, with BaO-TiO 2, BaO-Nd 2o 3-TiO 2, CaO-Li 2o-Sm 2o 3-TiO 2, CaO-Sm 2o 3-TiO 2deng high dielectric constant material, (sintering temperature is all 1300 ℃compare above) Li 2o-Nb 2o 5-TiO 2there is lower sintering temperature (approximately 1100 ℃), by a small amount of doping, can realize low-temperature sintering.
At present both at home and abroad to Li 2o-Nb 2o 5-TiO 2the low-temperature sintering of system material has some research reports, and wherein, patent ZL200910042201.7 discloses by adding V 2o 5, H 3bO 3or Li 2o and V 2o 5mixture realize Li 2o-Nb 2o 5-TiO 2the low-temperature sintering of system; Patent ZL200710060654.3 discloses by adding B 2o 3, Bi 2o 3, CuO and Pb 3o 4-SiO 2-Bi 2o 3-ZnO-TiO 2-B 2o 3glass powder reduces Li 2o-Nb 2o 5-TiO 2system sintering temperature; " the Effect of Li that DongHeonKang etc. deliver at S ℃ of iety > > of < < Journal of the European Ceramic 26 volume 2117-2121 pages in 2006 2o-V 2o 5on the low temperature sintering and microwave dielectric properties of Li 1.0nb 0.6ti 0.5o 3ceramics " in a literary composition by adding Li 2o-V 2o 5realize Li 1.0nb 0.6ti 0.5o 3low temperature burn sintering.About Li 2o-Nb 2o 5-TiO 2in the report of system, reduce its sintering temperature greatly mainly with adding low melting point, the cooling auxiliary agent adding generally includes: V 2o 5, containing Pb glass auxiliary agent, B 2o 3, H 3bO 3wherein one or more.V wherein 2o 5, containing the starting material Pb of Pb glass, have severe toxicity, can not meet the environmental protection needs of increasingly paying attention to.In addition B, 2o 3and H 3bO 3tackiness agent in easily filling a prescription with curtain coating, dispersion agent etc. react, and are difficult for making casting slurry.Therefore, the low-temperature sintering Li that can be made into casting slurry of preparation environment-friendly type 2o-Nb 2o 5-TiO 2it is particularly important that ceramic powder seems.
Summary of the invention
The object of the invention is to overcome the shortcoming and defect of prior art, an object of the present invention is to provide a kind of environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic, this stupalith for can 900 ℃ of dense sinterings, high-k, low-dielectric loss, level off to zero frequency-temperature coefficient, can burn altogether, can be made into microwave dielectric material casting slurry, that meet environmental requirement with electrode in the silver metal of high conductivity.An object of the present invention is to provide the preparation method of above-mentioned stupalith.
In order to realize first above-mentioned object, the present invention has adopted following technical scheme:
An environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic, its composition formula is:
Li 1+m-nNb 1-m-3nTi m+4nO 3+awt%ZnNb 2O 6+bwt%MnCO 3+cwt%CuO?+dwt%Bi 2O 3+ewt%?Li 2CO 3
Wherein: 0.05≤m≤0.2,0.05≤n≤0.175,0≤a≤10,0≤b≤4,0<c≤4,0≤d≤4,0<e≤6, a, b, c, d and e are massfraction.
As further improvement, the composition formula of described media ceramic is:
LiNb 0.6Ti 0.5O 3+awt%ZnNb 2O 6?+bwt%?MnCO 3?+cwt%?CuO+dwt%?Bi 2O 3+ewt%?Li 2CO 3
0≤a≤8 wherein, 0.5≤b≤4,0.5≤c≤4,0≤d≤2,0<e≤4, a, b, c, d and e are massfraction.
In order to realize second above-mentioned object, the present invention has adopted following technical scheme:
Prepare an above-mentioned environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic, the method comprises the following steps:
1. by analytical pure Li 2cO 3, Nb 2o 5, TiO 2at 120 ~ 140 ℃, dry after 20 ~ 30 hours by Li 1+m-nnb 1-m-3nti m+4no 3chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic Li 2o-Nb 2o 5-TiO 2base-material, it is stand-by that pre-burned base-material is crossed 40 mesh sieves;
2. by analytical pure ZnO, Nb 2o 5at 120 ~ 140 ℃, dry after 20 ~ 30 hours by ZnNb 2o 6chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic ZnNb 2o 6, pre-burned ZnNb 2o 6with 40 eye mesh screens, sieve;
3. by above-mentioned pre-burned Li 2o-Nb 2o 5-TiO 2, ZnNb 2o 6and MnCO 3, CuO, Bi 2o 3, Li 2cO 3by proportioning Li 1+m-nnb 1-m-3nti m+4no 3+ awt%ZnNb 2o 6+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3weigh, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.3 ~ 1.6:5 ~ 7, in horizontal ball mill, mix 18 ~ 24 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, add the granulation of 5wt% poly (vinyl alcohol) binder, briquetting under 4 ~ 6MPa pressure, sintering in 850 ~ 900 ℃ of air atmosphere, be incubated 2 ~ 4 hours, obtain stupalith of the present invention.
The present invention who adopts above-mentioned formula and technique to form, can obtain ε r=50 ~ 78, Qf>4000GHz, temperature coefficient of resonance frequency τ f~ 0 Temperature Firing Microwave Dielectric Ceramics, performance index meet the design requirements of multi-layer RF components and parts completely.The present invention has following characteristics:
1. in formula, add ZnNb 2o 6regulating frequency temperature factor, makes Li 2o-Nb 2o 5-TiO 2the frequency-temperature coefficient τ of pottery flevel off to zero;
2. compound interpolation MnCO 3, CuO, Bi 2o 3, Li 2cO 3, make Li 2o-Nb 2o 5-TiO 2pottery can be 900 ℃dense sintering, regulates each auxiliary agent content, can realize the common burning of pottery and Ag inner electrode, meets the basic demand of chip multilayer microwave device;
3. the sintering aid that the present invention adopts meets environmental requirement;
4. simple, stable, the favorable reproducibility of material technology of the present invention;
5. material of the present invention has been applied to produce, can prepare the chip multilayer microwave ceramic components such as Hi-pass filter in cableless communication, Ba Lun, Ba Lun wave filter with this material.
Accompanying drawing explanation
Fig. 1 is formula number 5(m=0.1 in embodiment, n=0.1, a=6, b=0.5, c=1, d=0.25, e=2) LiNb that obtains under 900 ℃ of sintering temperatures 0.6ti 0.5o 3the stereoscan photograph of pottery.
Fig. 2 is for being used formula number 4(m=0.1 in embodiment, n=0.1, a=4, b=1.5, c=1.5, d=0.5, e=2) the Ba Lun wave filter profile photo (50 times of magnifications) made of material.
Embodiment
embodiment 1
1. by analytical pure Quilonum Retard (Li 2cO 3), Niobium Pentxoxide (Nb 2o 5), titanium dioxide (TiO 2) 130 ℃lower baking was pressed LiNb after 24 hours 0.6ti 0.5o 3(being m=0.1, n=0.1) chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.7:5, in horizontal ball mill, mix 24 hours, the slurry mixing is after 80 ℃ of oven dry, and in 850 ℃ of air atmosphere, pre-burning is 4 hours, synthetic LiNb 0.6ti 0.5o 3, pre-burned LiNb 0.6ti 0.5o 3with 40 eye mesh screens, sieve.
2. by analytical pure zinc oxide (ZnO), Niobium Pentxoxide (Nb 2o 5) at 130 ℃, dry after 24 hours by ZnNb 2o 6chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5:5, in horizontal ball mill, mix 24 hours, the slurry mixing is after 80 ℃ of oven dry, in 800 ℃ of air atmosphere, pre-burning is 4 hours, synthesizes ZnNb 2o 6, pre-burned ZnNb 2o 6with 40 eye mesh screens, sieve.
3. by above-mentioned pre-burned LiNb 0.6ti 0.5o 3and ZnNb 2o 6and MnCO 3, CuO, Bi 2o 3, Li 2cO 3press LiNb 0.6ti 0.5o 3+ awt%ZnNb 2o 6+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3(specifically filling a prescription in Table 1) forms weighing, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5:7, ball milling mixes 24 hours, the slurry mixing is after 80 ℃ of oven dry, add the granulation of 5wt% polyvinyl alcohol (PVA) tackiness agent, under 4 ~ 6MPa pressure, being pressed into diameter is 20mm, the nahlock that thickness is 8 ~ 9mm, sintering in 900 ℃ of air atmosphere, is incubated and within 3 hours, obtains stupalith of the present invention.
After sintering, the volume density of nahlock sample records by Archimedes's method, adopts the grain morphology feature of Japanese Hitachi S4800 field emission scanning electron microscope (FESEM) observing samples sinter section.After sample surfaces polishing, adopting Agilent 8719ET(50MHz ~ 13.5GHz) network analyzer surveys its microwave dielectric property.The frequency-temperature coefficient τ of sample fin 25 ~ 80 ℃ of temperature ranges, record, and by formula τ f=(f 80-f 25)/(f 25* 55) calculate, wherein f 80and f 25it is respectively the resonance center frequeH at 80 ℃ and 25 ℃.
Table 1 shows density in embodiment, microwave dielectric property (test frequency is 3GHz) and component relationship.
Table 1
Numbering m n a b c d e Density (g/cm 3） ε r Qf(GHz) τ f ppm/℃)
1 0.1 0.1 4 0 1.5 1.5 2 4.09 64.29 5340 15
2 0.1 0.1 4 0.5 1 1 2 4.02 64.76 4492 9
3 0.1 0.1 6 1 0.5 1 2 4.03 67.57 4568 8
4 0.1 0.1 4 1.5 1.5 0.5 2 4.10 65.39 4282 9
5 0.1 0.1 6 0.5 1 0.25 2 4.07 66.30 4576 12
embodiment 2
1. by forming Li 1.095nb 0.375ti 0.8o 3(m=0.1, n=0.175) 1. synthesizes Li through embodiment 1 step 1.095nb 0.375ti 0.8o 3base-material.
2. by forming ZnNb 2o 6through embodiment 1 step, 2. synthesize ZnNb 2o 6.
3. by synthetic Li 1.095nb 0.375ti 0.8o 3and ZnNb 2o 6and MnCO 3, CuO, Bi 2o 3, Li 2cO 3press Li 1.095nb 0.375ti 0.8o 3+ awt%ZnNb 2o 6+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3(specifically filling a prescription in Table 2) is 3. pressed into nahlock through embodiment 1 step, and sintering in 900 ℃ of air atmosphere is incubated and within 3 hours, obtains stupalith of the present invention.
Performance measurement method is with embodiment 1, and test result is 3GHz as shown 2(test frequency).
Table 2
Numbering m n a b c d e Density (g/cm 3） ε r Qf(GHz) τ f ppm/℃)
6 0.1 0.175 8 0.5 1 1 2 3.96 60.34 7432 11
7 0.1 0.175 10 1.5 1 0.5 2 3.90 59.21 7649 9
embodiment 3
1. by forming Li 1.025nb 0.675ti 0.4o 3(m=0.1, n=0.075) 1. synthesizes Li through embodiment 1 step 1.025nb 0.675ti 0.4o 3.
2. by synthetic Li 1.025nb 0.675ti 0.4o 3and MnCO 3, CuO, Bi 2o 3, Li 2cO 3press Li 1.025nb 0.675ti 0.4o 3+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3(specifically filling a prescription in Table 3) is 3. pressed into nahlock through embodiment 1 step, and sintering in 900 ℃ of air atmosphere is incubated and within 3 hours, obtains stupalith of the present invention.
Performance measurement method is with embodiment 1, and test result is 3GHz as shown 3(test frequency).
Table 3
Numbering m n a b c d e Density (g/cm 3） ε r Qf(GHz) τ f(ppm/℃)
8 0.1 0.075 0 1.5 1.5 0 2 4.15 70.15 3965 7
9 0.1 0.075 0 1.5 1 0.25 2 4.14 70.63 3840 8
Above-described embodiment has been illustrated technical conceive of the present invention and feature, can not limit the scope of the invention with this.All equivalences that spirit is done according to the present invention change and modify, within all should being encompassed in protection scope of the present invention.

Claims (3)

1. an environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic, is characterized in that its composition formula is:
Li 1+m-nNb 1-m-3nTi m+4nO 3+awt%ZnNb 2O 6+bwt%MnCO 3+cwt%CuO?+dwt%Bi 2O 3+ewt%?Li 2CO 3
Wherein: 0.05≤m≤0.2,0.05≤n≤0.175,0≤a≤10,0≤b≤4,0<c≤4,0≤d≤4,0<e≤6, a, b, c, d and e are massfraction; Described ceramic preparation method comprises the following steps:
1. by analytical pure Li 2cO 3, Nb 2o 5, TiO 2at 120 ~ 140 ℃, dry after 20 ~ 30 hours by Li 1+m-nnb 1-m-3nti m+4no 3chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic Li 2o-Nb 2o 5-TiO 2base-material, it is stand-by that pre-burned base-material is crossed 40 mesh sieves;
2. by analytical pure ZnO, Nb 2o 5at 120 ~ 140 ℃, dry after 20 ~ 30 hours by ZnNb 2o 6chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic ZnNb 2o 6, pre-burned ZnNb 2o 6with 40 eye mesh screens, sieve;
3. by above-mentioned pre-burned Li 2o-Nb 2o 5-TiO 2, ZnNb 2o 6and MnCO 3, CuO, Bi 2o 3, Li 2cO 3by proportioning Li 1+m-nnb 1-m-3nti m+4no 3+ awt%ZnNb 2o 6+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3weigh, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.3 ~ 1.6:5 ~ 7, in horizontal ball mill, mix 18 ~ 24 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, add the granulation of 5wt% poly (vinyl alcohol) binder, briquetting under 4 ~ 6MPa pressure, sintering in 850 ~ 900 ℃ of air atmosphere, be incubated 2 ~ 4 hours, obtain described stupalith.
2. a kind of environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic according to claim 1, is characterized in that its composition formula is:
LiNb 0.6Ti 0.5O 3+awt%ZnNb 2O 6?+bwt%?MnCO 3?+cwt%?CuO+dwt%?Bi 2O 3+ewt%?Li 2CO 3
0≤a≤8 wherein, 0.5≤b≤4,0.5≤c≤4,0≤d≤2,0<e≤4, a, b, c, d and e are massfraction.
3. a method of preparing environment-friendly type low-temperature sintered high-epsilon microwave dielectric ceramic claimed in claim 1, is characterized in that the method comprises the following steps:
1. by analytical pure Li 2cO 3, Nb 2o 5, TiO 2at 120 ~ 140 ℃, dry after 20 ~ 30 hours by Li 1+m-nnb 1-m-3nti m+4no 3chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic Li 2o-Nb 2o 5-TiO 2base-material, it is stand-by that pre-burned base-material is crossed 40 mesh sieves;
2. by analytical pure ZnO, Nb 2o 5at 120 ~ 140 ℃, dry after 20 ~ 30 hours by ZnNb 2o 6chemical formula weighs, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.5 ~ 1.8:5 ~ 7, in horizontal ball mill, mix 24 ~ 30 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, in 800 ~ 900 ℃ of air atmosphere, pre-burning is 4 ~ 6 hours, synthetic ZnNb 2o 6, pre-burned ZnNb 2o 6with 40 eye mesh screens, sieve;
3. by above-mentioned pre-burned Li 2o-Nb 2o 5-TiO 2, ZnNb 2o 6and MnCO 3, CuO, Bi 2o 3, Li 2cO 3by proportioning Li 1+m-nnb 1-m-3nti m+4no 3+ awt%ZnNb 2o 6+ bwt%MnCO 3+ cwt%CuO+dwt%Bi 2o 3+ ewt%Li 2cO 3weigh, by load weighted powder by powder: industrial spirit: zirconia ball weight ratio is: 1:1.3 ~ 1.6:5 ~ 7, in horizontal ball mill, mix 18 ~ 24 hours, the slurry mixing is after 70 ~ 90 ℃ of oven dry, add the granulation of 5wt% poly (vinyl alcohol) binder, briquetting under 4 ~ 6MPa pressure, sintering in 850 ~ 900 ℃ of air atmosphere, be incubated 2 ~ 4 hours, obtain described stupalith.
CN201210064340.1A 2012-03-13 2012-03-13 Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof Active CN102584234B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210064340.1A CN102584234B (en) 2012-03-13 2012-03-13 Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210064340.1A CN102584234B (en) 2012-03-13 2012-03-13 Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102584234A CN102584234A (en) 2012-07-18
CN102584234B true CN102584234B (en) 2014-04-16

Family

ID=46473574

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210064340.1A Active CN102584234B (en) 2012-03-13 2012-03-13 Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102584234B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104446465B (en) * 2014-08-28 2017-09-22 云南云天化股份有限公司 A kind of ceramic material and preparation method thereof, polytetrafluoroethylene (PTFE) ceramic composite and preparation method thereof and substrate
CN104692800B (en) * 2015-02-04 2016-08-24 桂林理工大学 A kind of temperature-stable unleaded huge dielectric constant ceramic material
CN105693241B (en) * 2016-02-22 2018-05-04 济南大学 High quality factor lithium magnesium niobium series microwave dielectric ceramic and preparation method thereof
US10160689B2 (en) 2016-07-12 2018-12-25 Shenzhen Sunlord Electronics Co., Ltd. CBS-based LTCC material and preparation method thereof
CN106187141B (en) * 2016-07-12 2019-06-28 深圳顺络电子股份有限公司 A kind of CBS system LTCC material and preparation method thereof
CN106495690A (en) * 2016-10-20 2017-03-15 邓湘凌 Superelevation biology dielectric oxidation zircon ceramic and preparation method thereof
CN108373318A (en) * 2018-05-29 2018-08-07 江西人民输变电有限公司 A kind of processing method of positioning antenna microwave-medium function ceramics
CN112592160B (en) * 2020-12-23 2022-05-24 嘉兴佳利电子有限公司 Complex-phase low-temperature co-fired ceramic material and preparation method thereof
CN114573333B (en) * 2022-02-28 2023-06-09 嘉兴佳利电子有限公司 Low-temperature co-fired ceramic material of low-dielectric wollastonite and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101215159A (en) * 2007-12-28 2008-07-09 天津大学 Low-temperature sintering low-loss high frequency medium ceramic and preparing method thereof
CN101381230A (en) * 2008-10-14 2009-03-11 浙江大学 Low temperature sintering high-dielectric constant microwave-medium ceramics material and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101215159A (en) * 2007-12-28 2008-07-09 天津大学 Low-temperature sintering low-loss high frequency medium ceramic and preparing method thereof
CN101381230A (en) * 2008-10-14 2009-03-11 浙江大学 Low temperature sintering high-dielectric constant microwave-medium ceramics material and preparation method thereof

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
AlbinaBorisevich Peter K. Davies.Microwave dielectric properties of Li1+x-yM1-x-3yTix+4yO3 (M=Nb5+
Jian-Xi Tong et.al..Low-Temperature Firing and Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.84Ti0.16]O3-d Ceramics for LTCC Applications.《J. Am. Ceram. Soc.》.2007,第90卷(第3期),845-849.
Low-Temperature Firing and Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.84Ti0.16]O3-d Ceramics for LTCC Applications;Jian-Xi Tong et.al.;《J. Am. Ceram. Soc.》;20071231;第90卷(第3期);845-849 *
Microwave dielectric properties of Li1+x-yM1-x-3yTix+4yO3 (M=Nb5+, Ta5+) solid solutions;Albina Borisevich, Peter K. Davies;《Journal of the European Ceramic Society》;20011231;第21卷;1719-1722 *
低温烧结ZnNb2O6/TiO2复合陶瓷的制备及介电性能研究;张启龙 等;《材料科学与工程学报》;20031031;第21卷(第5期);694-696 *
张启龙 等.低温烧结ZnNb2O6/TiO2复合陶瓷的制备及介电性能研究.《材料科学与工程学报》.2003,第21卷(第5期),694-696.

Also Published As

Publication number Publication date
CN102584234A (en) 2012-07-18

Similar Documents

Publication Publication Date Title
CN102584234B (en) Environment-friendly low-temperature sintered high-epsilon microwave dielectric ceramic and preparation method thereof
CN103396120B (en) Low-temperature sinterable molybdenum-based microwave dielectric ceramic Ba4Li2Mo2O11
CN103496964B (en) Low-temperature sintering microwave dielectric ceramic Ca3Bi(PO4)3 and preparation method thereof
CN104211391A (en) Low-temperature sintering temperature-stable medium dielectric constant microwave dielectric ceramic Bi3La5Ti7O26 and preparation method thereof
CN104003722A (en) Ultralow-dielectric constant microwave dielectric ceramic Li3AlV2O8 capable of being sintered at low temperature and preparation method thereof
CN103496973B (en) Low temperature sintered microwave dielectric ceramic BiTiNbO6 and preparation method thereof
CN103496981B (en) Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14W2O27 and preparation method thereof
CN103467095B (en) Low-temperature sinterable microwave dielectric ceramic SrCuV2O7 and preparation method thereof
CN103553612B (en) Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof
CN103496979B (en) Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof
CN101538159B (en) Microwave dielectric ceramic with medium dielectric constant sintered at low temperature and preparation method thereof
CN104045344A (en) Low temperature sinterable microwave dielectric ceramic Li2Zn3WO7 and preparation method thereof
CN103539449A (en) Microwave dielectric ceramic BiNbW2O10 capable of being sintered at low temperature and preparation method thereof
CN103496969B (en) Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14WO24 and preparation method thereof
CN104003721A (en) Microwave dielectric ceramic Li2W2Zn3O10 capable of being sintered at low temperature and preparation method thereof
CN103539445B (en) Microwave dielectric ceramic Zn2V3Bi3O14 capable of being subjected to low-temperature sintering as well as preparation method thereof
CN103496986B (en) Low temperature sintered microwave dielectric ceramic BiCa9V7O28 and preparation method thereof
CN103896572B (en) Temperature stable microwave dielectric ceramic Li3PO4 capable of being sintered at low temperature and preparation method of temperature stable microwave dielectric ceramic Li3PO4
CN104876572A (en) High-quality factor ultralow-dielectric constant microwave dielectric ceramic CaLi3La3Mo2O13
CN103496984B (en) Low temperature sintered microwave dielectric ceramic Bi2CaV2O9 and preparation method thereof
CN104003719A (en) Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof
CN104370544A (en) Temperature stable type microwave dielectric ceramic with ultra low dielectric constant capable of being sintered at low temperature and preparation method of temperature stable type microwave dielectric ceramic
CN103922721A (en) Low-temperature sintering available microwave dielectric ceramic Li4P2O7 and preparation method thereof
CN103896573B (en) Low temperature sintering temperature-stable microwave dielectric ceramic LiPO 3and preparation method thereof
CN103964848B (en) The microwave dielectric ceramic Li of sintered at ultra low temperature 2pVO 6and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: 314003 Jiaxing City, Zhejiang Province Economic Development Zone Yong Wui street is the original Road No. 66

Patentee after: Jiaxing Jiali Electronic Co., Ltd.

Address before: 314003 Jiaxing Economic Development Zone, Tong Tong Street is the original road, No. 66, No.

Patentee before: Jiaxing Jiali Electronic Co., Ltd.