CN102577136A - Radio frequency power amplifier with linearizing predistorter - Google Patents
Radio frequency power amplifier with linearizing predistorter Download PDFInfo
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- CN102577136A CN102577136A CN2009801619849A CN200980161984A CN102577136A CN 102577136 A CN102577136 A CN 102577136A CN 2009801619849 A CN2009801619849 A CN 2009801619849A CN 200980161984 A CN200980161984 A CN 200980161984A CN 102577136 A CN102577136 A CN 102577136A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0425—Circuits with power amplifiers with linearisation using predistortion
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Abstract
A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
Description
Background technology
Radio frequency (RF) transmitter, generally include power amplifier such as those transmitters that in mobile radiotelephone hand-held set (being also referred to as cellular telephone) and other portable wireless transceivers, comprise.This power amplifier is the last level of transmitter circuit normally.In the transmitter of some types, realize that it is very important that linear power amplifies.But various factors possibly hinder linear operation.For example; In such transmitter that in the mobile radiotelephone hand-held set of some types, generally includes; Wherein, this power amplifier receives the output of up-conversion mixer, and this frequency mixer big relatively signal of output usually can be driven into power amplifier in the nonlinear operation.Increasing the power amplifier electric current is to be used for promoting a technology in the linear operation of this transmitter, but it is not all to work finely in all cases.
Shown in Fig. 1-2; In such transmitter that in the mobile radiotelephone hand-held set of some types, generally includes; Power amplifier 10 generally includes some amplifier driving stages or part 12,14,16 etc., at least one in these, comprises in response to RF input voltage signal 20 (V_IN) mutual conductance (Gm) amplifier of output radio frequency (RF) current signal 18 (I_OUT) such as amplifier driving stage 14.Can control the gain that the biasing voltage signal 22 (V_BIAS) that provides via RF choke 24 comes control power amplifiers 10.Though (not shown in Fig. 1-2, the circuit in the mobile radiotelephone hand-held set generates biasing voltage signal 22 in response to the various operating conditions of needs adjustment transmitter power output in order to know.) as shown in Figure 2, the mos field effect transistor (MOSFET) that trsanscondutance amplifier transistor 26 is normally arranged in the circuit with the common source configuration.RF input voltage signal 20 is coupled to the grid of transistor 26 via coupling capacitor 28.For the clear and not shown current source circuit that is coupled to transistor 26, but with ellipsis (" ... ") symbol is indicated this current source circuit.This MOSFET produces non-linear current signal 18 when being driven by big relatively signal, as reduce such as mobility, speed is saturated and the result of the nonlinear transistor effect of input capacitance.The Known designs trsanscondutance amplifier comes with the current level operation that increases, and also promotes linear operation to a certain extent to attempt the satisfying noiseproof feature demand.But increasing electric current separately can not provide enough overdrive voltages at gate-source knot place usually, to present linear output current signal 18.The technology that is known as degeneration can make up with the current technique of above-mentioned increase, and is linear with further promotion, but this degeneration has hindered the use as the biasing voltage signal 22 of amplifier gain control.And the electric current of the increase in mobile radiotelephone hand-held set power amplifier is tending towards battery quickly.
Promote trsanscondutance amplifier linear with the mode that did not consume multiple current, degradation amplifier noise performance or sacrifice bias voltage controllable gain property expectation.
Summary of the invention
Embodiments of the invention relate to a kind of power amplifier circuit, comprise amplifier MOSFET and predistorter MOSFET.This amplifier MOSFET has via linear coupling capacitor and is coupled to first bias voltage and is coupled to the gate terminal of input voltage signal.(" coupling " meaning at the term of this use is to connect via zero or more intermediary element.) provide the amplifier MOSFET source electrode of amplifier output current signal and drain electrode end to be coupled to reference voltage and current source or place (sink) such as ground or supply voltage.Said predistorter MOSFET is connected between the gate terminal and second biasing voltage signal of amplifier MOSFET.Source electrode and the drain electrode end of said predistorter MOSFET are joined together, and make its gate terminal place at amplifier MOSFET that nonlinear capacitance is provided.
The grid-source voltage of amplifier MOSFET is the input voltage signal that electric capacity ground is divided between the combined non-linearity electric capacity of the linear coupling capacitance of input and amplifier MOSFET and predistorter MOSFET.Therefore, the grid-source voltage of amplifier MOSFET is non-linear or predistortion.This predistortion promotes to eliminate the distortion that caused by amplifier MOSFET or non-linear.
Based on browsing following accompanying drawing and detailed description, other system of the present invention, method, feature and advantage will be or become obvious to those skilled in the art.
Description of drawings
Can come to understand better the present invention with reference to accompanying drawing.Assembly in the accompanying drawing is not necessarily proportional, but stresses to place in order clearly to illustrate principle of the present invention.In addition, in the drawings, like reference numerals is specified corresponding part in different views.
Fig. 1 is the block diagram with known power amplifier system of at least one transconductance stage.
Fig. 2 is the sketch map of a part of transconductance stage of the power amplifier system of Fig. 1.
Fig. 3 is the sketch map according to the part of the transconductance stage of the power amplifier system of example embodiment of the present invention.
Fig. 4 is the sketch map according to the part of the transconductance stage of the power amplifier system of another example embodiment of the present invention.
Fig. 5 is the sketch map according to the part of the transconductance stage of the power amplifier system of another example embodiment of the present invention.
Fig. 6 is the sketch map according to the part of the transconductance stage of the power amplifier system of another example embodiment of the present invention.
Fig. 7 is the improved figure that is illustrated in the trsanscondutance amplifier linearity.
Fig. 8 is the block diagram that has according to the mobile radiotelephone hand-held set of the power amplifier system of example embodiment of the present invention.
Fig. 9 is the transmitter block diagram partly of the mobile radiotelephone hand-held set of Fig. 7.
Embodiment
As shown in Figure 3, the mutual conductance (g of such RF power amplifier that can in the mobile radiotelephone hand-held set of for example some types, comprise jointly
m) amplifier circuit 30 that comprises is exported RF current signal 32 (I_OUT) in response to RF input voltage signal 34 (V_IN) in the level.Amplifier circuit 30 comprises amplifier MOSFET 36 and predistorter MOSFET 38.In the embodiment shown in fig. 3, amplifier MOSFET 36 is n raceway groove (NMOS) devices, and predistorter MOSFET 38 is p raceway groove (PMOS) devices.
The gate terminal of amplifier MOSFET 36 is coupled to first biasing voltage signal 40 (V_BIAS) via RF choke 42.The gate terminal of amplifier MOSFET 36 also is coupled to input voltage signal 34 via linear coupling capacitor 44.The source terminal of amplifier MOSFET 36 is connected to ground.The drain electrode end of amplifier MOSFET 36 is connected to current source circuit, and it is for clear and not shown, but with ellipsis (" ... ") symbol is indicated this current source circuit.
The source electrode of predistorter MOSFET 38 connects together with drain electrode end, defines (non-linear) electric capacity thus effectively.Predistorter MOSFET 38 is connected between the gate terminal and second biasing voltage signal 46 (V_BIAS_PMOS) of amplifier MOSFET 36; So that the gate terminal of predistorter MOSFET 38 is connected to the gate terminal of amplifier MOSFET 36, and the source electrode of predistorter MOSFET 38 and drain electrode end are connected to second biasing voltage signal 46.The biasing of predistorter MOSFET 38 makes its gate terminal place at amplifier MOSFET 36 that nonlinear capacitance is provided.
Select the size of second biasing voltage signal 46 and predistorter MOSFET 38, so that the capacitor of the mode behavior on the contrary of the input capacitor unilateral act of the combination definition of the nonlinear capacitance of the nonlinear capacitance of predistorter MOSFET 38 and amplifier MOSFET 36 and amplifier MOSFET 36.But, notice that the nonlinear capacitance of predistorter 38 is not only offset the nonlinear capacitance of amplifier MOSFET 36.But the grid-source voltage of amplifier MOSFET 36 is the input voltage signal 34 that electric capacity ground is divided between the combined non-linearity electric capacity of linear coupling capacitance 44 devices and predistorter MOSFET 38 and amplifier MOSFET 38.Therefore, the grid-source voltage of amplifier MOSFET 36 is non-linear or predistortion.The distortion of this predistortion counteracting amplifier MOSFET 36 or non-linear.Can come to understand better this effect with reference to following formula.
In existing transconductance amplifier circuit such as amplifier driving stage 14 shown in Figure 2:
(1)V_GS
26＝V_IN*[C
28/(C
28+C
26GG)]，
Wherein, V_GS
26Be the grid-source voltage of amplifier MOSFET 26, C
28Be the electric capacity of coupling capacitor 28, and C
26GGBe the electric capacity of amplifier MOSFET 26 in its gate terminal;
(2)I_OUT＝Gm
26*V_GS
26＝Gm
26*V_IN*[C
28/(C
28GG+C
26GG)]，
Wherein, Gm
26It is the mutual conductance of amplifier MOSFET 26; And.
(3)Gm
eff＝Gm
26*[C
28GG/(C
28GG+C2
6GG)]，
Wherein, Gm
EffIt is effective mutual conductance of amplifier driving stage 14.
From formula (3), can find out that the product (wherein, these are non-linear uncorrelated each other) that non-linear mutual conductance and nonlinear capacitance are divided causes non-linear effective mutual conductance (Gm of making up
Eff).
On the contrary, in the above with reference in the figure 3 described example transconductance amplifier circuits 30:
(4)I_OUT＝Gm
36*V_GS
36＝Gm
36*V_IN*[C
44/(C
44+C
36GG+C
38GG)]，
Gm wherein
36Be the mutual conductance of amplifier MOSFET 36, V_GS
36Be the grid-source voltage of amplifier MOSFET 36, C
44Be the linear capacitance of coupling capacitor 44, C
36GGBe the nonlinear capacitance of amplifier MOSFET 36 at its gate terminal place, and C
38GGBe the nonlinear capacitance of predistorter MOSFET 38 at its gate terminal place; And
(5)Gm
eff＝Gm
36*[C
44/(C
44+C
36GG+C
38GG)]，
Wherein, Gm
EffIt is effective mutual conductance of amplifier circuit 30.
From formula (5), can find out that the product that non-linear mutual conductance and nonlinear capacitance are divided (wherein, these non-linear adjustment to cancel each other out) causes linear effectively mutual conductance (Gm
Eff).The size that can be through selecting MOSFET 38 and the value of second bias voltage 46 are adjusted the nonlinear capacitance of predistorter MOSFET 38.Total nonlinear capacitance of predistorter 38 and total nonlinear capacitance of amplifier MOSFET 36 should be caught similar each other,, have similar nonlinear characteristic that is.Can confirm to cause the maximum of the nonlinear operation of amplifier circuit 30 to reduce and cause the combination of value of size and second bias voltage 46 of the similar each other predistorter MOSFET 38 of total nonlinear capacitance of total nonlinear capacitance and amplifier MOSFET 36 of predistorter MOSFET 38 through experience or through any other suitable mode.Can pass through circuit simulation, promptly use common available emulator software, through software mode on suitable workstation computer (not shown) to circuit modeling, the estimation of experimentizing property.In emulation, the length of second bias voltage 46 and predistorter MOSFET 38 and width can sweep away the scope of the value that is relative to each other, and can observe how linear or action non-linearly of amplifier circuit 30, and notice optimum value.In this way, the those skilled in the art that the present invention relates to can be fast and are easily confirmed one of size and second bias voltage 46 of predistorter MOSFET 38 or both appropriate values.As an example, amplifier MOSFET 36 can be 4.80 microns wide and 0.24 micron long; Predistorter MOSFET 38 can be 6.72 microns wide and 0.24 micron long; And second bias voltage 46 can be 650 millivolts.First bias voltage 40 can be for example 1.1 volts.
The amplifier circuit 48 of replacement has been shown among Fig. 4.Mutual conductance (the g of such RF power amplifier that can in the mobile radiotelephone hand-held set of for example some types, comprise jointly
m) amplifier circuit 48 that comprises is exported RF current signal 50 (I_OUT) in response to RF input voltage signal 52 (V_IN) in the level.Amplifier circuit 48 comprises amplifier MOSFET 54 and predistorter MOSFET 56.In the embodiment shown in fig. 4, amplifier MOSFET 54 is p raceway groove (PMOS) devices, and predistorter MOSFET56 is n raceway groove (NMOS) device.
The gate terminal of amplifier MOSFET 54 is coupled to first biasing voltage signal 58 (V_BIAS) via RF choke 60.The gate terminal of amplifier MOSFET 54 also is coupled to input voltage signal 52 via linear coupling capacitor 62.The source terminal of amplifier MOSFET 54 is connected to supply voltage (VCC).The drain electrode end of amplifier MOSFET 54 is connected to the current sink circuit, and it is for clear and not shown, but with ellipsis (" ... ") symbol is indicated this current sink circuit.
Source electrode and the drain electrode end of predistorter MOSFET 56 are joined together, and define (non-linear) electric capacity thus effectively.Predistorter MOSFET 56 is connected between the gate terminal and second biasing voltage signal 64 (V_BIAS_NMOS) of amplifier MOSFET 54; So that the gate terminal of predistorter MOSFET 56 is connected to the gate terminal of amplifier MOSFET 54, and the source electrode of predistorter MOSFET 56 and drain electrode end are connected to second biasing voltage signal 64.This biasing of predistorter MOSFET 56 makes its gate terminal place at amplifier MOSFET 54 that nonlinear capacitance is provided.
Select the size of second biasing voltage signal 64 and predistorter MOSFET 56, so that the capacitor of the mode behavior on the contrary of the input capacitor unilateral act of the combination definition of the nonlinear capacitance of the nonlinear capacitance of predistorter MOSFET 56 and amplifier MOSFET 54 and amplifier MOSFET 54.The distortion of this predistortion counteracting amplifier MOSFET 54 or non-linear.
The amplifier circuit 66 of another replacement has been shown among Fig. 5.Mutual conductance (the g of such RF power amplifier that can in some mobile radiotelephone hand-held sets for example, comprise jointly
m) amplifier circuit 66 that comprises is exported RF current signal 68 (I_OUT) in response to RF input voltage signal 70 (V_IN) in the level.Amplifier circuit 66 comprises amplifier MOSFET 72 and predistorter MOSFET 74.In the embodiment shown in fig. 5, amplifier MOSFET 72 is n raceway groove (NMOS) devices, and predistorter MOSFET74 is n raceway groove (NMOS) device.
The gate terminal of amplifier MOSFET 72 is coupled to first biasing voltage signal 76 (V_BIAS) via RF choke 78.The gate terminal of amplifier MOSFET 72 also is coupled to input voltage signal 70 via linear coupling capacitor 80.The source terminal of amplifier MOSFET 72 is connected to ground.The drain electrode end of amplifier MOSFET 72 is connected to current source circuit, and it is for clear and not shown, but with ellipsis (" ... ") symbol is indicated this current source circuit.
Source electrode and the drain electrode end of predistorter MOSFET 74 are joined together, and define (non-linear) electric capacity thus effectively.Predistorter MOSFET 74 is connected between the gate terminal and second biasing voltage signal 82 (V_BIAS_NMOS) of amplifier MOSFET 72; So that the gate terminal of predistorter MOSFET 74 is connected to said second biasing voltage signal 82, and the source electrode of predistorter MOSFET 74 and drain electrode end are connected to the gate terminal of amplifier MOSFET 72.This biasing of predistorter MOSFET 74 makes its gate terminal place at amplifier MOSFET 72 that nonlinear capacitance is provided.
Select the size of second biasing voltage signal 82 and predistorter MOSFET 74, so that the capacitor of the mode behavior on the contrary of the input capacitor unilateral act of the combination definition of the nonlinear capacitance of the nonlinear capacitance of predistorter MOSFET 74 and amplifier MOSFET 72 and amplifier MOSFET 72.The distortion of this predistortion counteracting amplifier MOSFET 72 or non-linear.
Following formula is applied to embodiment shown in Figure 5:
(6)I_OUT＝Gm
72*V_GS
72＝Gm
72*V_IN*[C
80/(C
80+{C
72GG+(C
74DD+C
74SS)})]，
Gm wherein
36Be the mutual conductance of amplifier MOSFET 36, V_GS
36Be the grid-source voltage of amplifier MOSFET 36, C
44Be the linear capacitance of coupling capacitor 44, C
72GGBe the nonlinear capacitance of amplifier MOSFET 72 at its gate terminal place, and C
74DDBe the nonlinear capacitance of predistorter MOSFET 36 at its drain electrode end place, and C
74SSBe the nonlinear capacitance of predistorter MOSFET 38 at its source terminal place; And
(7)Gm
eff＝Gm
72*[C
80/(C
80+{C
72GG+(C
74DD+C
74SS)})]，
Wherein, Gm
EffIt is effective mutual conductance of amplifier circuit 66.
From formula (7), can find out that the product that non-linear mutual conductance and nonlinear capacitance are divided (wherein, these non-linear adjustment to cancel each other out) causes linear effectively mutual conductance (Gm
Eff).The size that can be through selecting MOSFET 74 and/or the value of second bias voltage 82 are adjusted the nonlinear capacitance of predistorter MOSFET 74.
The amplifier circuit 84 of another replacement has been shown among Fig. 6.Mutual conductance (the g of such RF power amplifier that can in the mobile radiotelephone hand-held set of for example some types, comprise jointly
m) amplifier circuit 84 that comprises is exported RF current signal 86 (I_OUT) in response to RF input voltage signal 88 (V_IN) in the level.Amplifier circuit 84 comprises amplifier MOSFET 90 and predistorter MOSFET 92.In the embodiment shown in fig. 6, amplifier MOSFET 90 is p raceway groove (PMOS) devices, and predistorter MOSFET 92 is p raceway groove (PMOS) devices.
The gate terminal of amplifier MOSFET 90 is coupled to first biasing voltage signal 94 (V_BIAS) via RF choke 96.The gate terminal of amplifier MOSFET 90 also is coupled to input voltage signal 88 via linear coupling capacitor 98.The source terminal of amplifier MOSFET 90 is connected to supply voltage (VCC).The drain electrode end of amplifier MOSFET 90 is connected to electric current and leaks (current drain) circuit, and it is for clear and not shown, but with ellipsis (" ... ") symbol is indicated this current source circuit.
Source electrode and the drain electrode end of predistorter MOSFET 92 are joined together, and define (non-linear) electric capacity thus effectively.Predistorter MOSFET 92 is connected between the gate terminal and second biasing voltage signal 100 (V_BIAS_PMOS) of amplifier MOSFET 90; So that the gate terminal of predistorter MOSFET 92 is connected to second biasing voltage signal 100, and the source electrode of predistorter MOSFET 92 and drain electrode end are connected to the gate terminal of amplifier MOSFET 90.This biasing of predistorter MOSFET 92 makes its gate terminal place at amplifier MOSFET 90 that nonlinear capacitance is provided.
Select the size of second biasing voltage signal 100 and predistorter MOSFET 92, so that the capacitor of the mode behavior on the contrary of the input capacitor unilateral act of the combination definition of the nonlinear capacitance of the nonlinear capacitance of predistorter MOSFET 92 and amplifier MOSFET 90 and amplifier MOSFET 90.The distortion of this predistortion counteracting amplifier MOSFET 90 or non-linear.
Illustrate the improved linearity of the trsanscondutance amplifier of the above-mentioned type among Fig. 7.The mutual conductance of the characteristic of the existing amplifier circuit of normally shown in Figure 2 such (Gm) the 99th, non-linear, and normally above-mentioned example RF power amplifier circuit 30,48,66 and 84 or effective mutual conductance (Gm of the characteristic of other this amplifier circuits that the present invention relates to
Eff) the 101st, more linear.
Like Fig. 8 and shown in Figure 9, above-mentioned example RF power amplifier circuit 30,48,66 and 84 or other this amplifier circuits that the present invention relates in any one can be included in mobile radio communications equipment 102, such as in the cell phone handset.Equipment 102 comprises radio frequency (RF) subsystem 104, antenna 106, baseband subsystems 108 and user interface part 110.RF subsystem 104 comprises transmitter part 112 and receiver part 114.The input of the output of transmitter part 112 and receiver part 114 is coupled to antenna 106 via front-end module 116, and this front-end module 116 allows to transmit simultaneously the RF signal and the RF signal that offers the reception of receiver part 114 through the transmission that is produced by transmitter part 112.But for the part of transmitter part 112, the above-mentioned element of listing can be the type that is included in traditionally in this mobile radio communications equipment.As traditional element, those of ordinary skills with fine understanding involved in the present invention and therefore be not described in detail at this.But; Unlike the conventional transmitter part of this mobile radio communications equipment, transmitter part 112 comprises or the power amplifier system 118 of more transconductance stage with other this amplifier circuits that possess above-mentioned example amplifier circuit 30,48,66 and 84 (not shown among Fig. 7-8) or the present invention relates to.Though should be noted that under the background of the example embodiment that relates to mobile radio communication apparatus and described the present invention, the present invention perhaps can realize in comprising other equipment of RF transmitter.
As shown in Figure 8, in transmitter part 112, power amplifier system 118 receives the output of upconverter 120, the output of this upconverter 120 and then reception modulator 122.Can be through adjusting the gain that one or more power control signals 124 come control power amplifiers system 118.Power control circuit 126 can generate control signal 124 in a conventional manner in response to various operating conditions, understands very much like this area.Bias voltage generator circuit (for clear and not shown) in the power amplifier system 118 can produce above-mentioned first and second biasing voltage signals in response to power control signal 124.As stated, can control any the gain in example amplifier circuit 30,48,66 and 84 through adjusting its first biasing voltage signal.Though in this example embodiment; Circuit through in the power amplifier system 118 generates the first and second bias voltage control signals; But in other embodiments, any other suitable part of any other circuit in the transmitter part 112 or mobile radio communication apparatus 102 can generate first and second biasing voltage signals.
Though described various embodiment of the present invention, those of ordinary skills will understand more embodiment and execution mode is possible within the scope of the invention.Therefore, do not limit the present invention, except in accompanying claims.
Claims (13)
1. power amplifier circuit that is used for radio frequency (RF) transmitter comprises:
Amplifier mos field effect transistor (MOSFET); Have via linear capacitance and be coupled to first bias voltage and be coupled to the gate terminal of input voltage signal; One in source terminal and the drain electrode end is coupled to reference voltage; In source terminal and the drain electrode end another is coupled to current circuit, and wherein, in said source terminal and the drain electrode end one provides output current signal in response to input voltage signal; And
Predistorter MOSFET is connected between the gate terminal and second biasing voltage signal of amplifier MOSFET, and the source terminal of said predistorter MOSFET is connected to the drain electrode end of said predistorter MOSFET.
2. according to the power amplifier circuit of claim 1, wherein:
Said amplifier MOSFET is n raceway groove (NMOS) device, and the source terminal of said amplifier MOSFET is coupled to the ground reference voltage, and the drain electrode end of said amplifier MOSFET is coupled to current source circuit; And
Said predistorter MOSFET is p raceway groove (PMOS) device, and the source terminal of said predistorter MOSFET and drain electrode end are connected to second biasing voltage signal, and the gate terminal of said predistorter MOSFET is connected to the gate terminal of said amplifier MOSFET.
3. according to the power amplifier circuit of claim 1, wherein:
Said amplifier MOSFET is p raceway groove (PMOS) device, and the source terminal of said amplifier MOSFET is coupled to the power supply reference voltage, and the drain electrode end of said amplifier MOSFET is coupled to the current sink circuit; And
Said predistorter MOSFET is n raceway groove (NMOS) device, and the source terminal of said predistorter MOSFET and drain electrode end are connected to second biasing voltage signal, and the gate terminal of said predistorter MOSFET is connected to the gate terminal of said amplifier MOSFET.
4. according to the power amplifier circuit of claim 1, wherein:
Said amplifier MOSFET is n raceway groove (NMOS) device, and the source terminal of said amplifier MOSFET is coupled to the ground reference voltage, and the drain electrode end of said amplifier MOSFET is coupled to current source circuit; And
Said predistorter MOSFET is n raceway groove (NMOS) device, and the source terminal of said predistorter MOSFET and drain electrode end are connected to the gate terminal of amplifier MOSFET, and the gate terminal of said predistorter MOSFET is connected to said second biasing voltage signal.
5. according to the power amplifier circuit of claim 1, wherein:
Said amplifier MOSFET is p raceway groove (PMOS) device, and the source terminal of said amplifier MOSFET is coupled to the power supply reference voltage, and the drain electrode end of said amplifier MOSFET is coupled to the current sink circuit; And
Said predistorter MOSFET is p raceway groove (PMOS) device, and the source terminal of said predistorter MOSFET and drain electrode end are connected to the gate terminal of said predistorter MOSFET, and the gate terminal of said predistorter MOSFET is connected to said second biasing voltage signal.
6. according to the power amplifier circuit of claim 1, wherein, said amplifier MOSFET has the nonlinear capacitance of the nonlinear capacitance that is substantially equal to said predistorter MOSFET.
7. according to the method for claim 6, wherein, said predistorter MOSFET has the nonlinear capacitance of the nonlinear capacitance that is substantially similar to said amplifier MOSFET.
8. according to the method for claim 7, wherein, the combination of the said predistorter MOSFET size and the second biasing voltage signal value has defined the nonlinear capacitance with the input capacitance behavior on the contrary of said amplifier MOSFET.
9. according to the power amplifier circuit of claim 1, wherein, said power amplifier circuit is included in the mobile radio communication apparatus.
10. method that is used at radio frequency (RF) transmitter neutral line ground amplification RF signal comprises:
To the gate terminal of amplifier mos field effect transistor (MOSFET) input voltage signal is provided via straightline capacitor;
Gate terminal to amplifier MOSFET provides first bias voltage;
One in source terminal that is coupled to amplifier MOSFET and drain electrode end provides reference voltage;
In another of source terminal and drain electrode end, hold electric current, wherein, in said source terminal and the drain electrode end one provides output current signal in response to input voltage signal; And
Predistortion is carried out gate terminal and the voltage between the source terminal at predistortion device MOSFET; Predistortion device MOSFET is connected between the gate terminal and second biasing voltage signal of amplifier MOSFET, the source terminal of said predistortion device MOSFET is connected to the drain electrode end of said predistortion device MOSFET; Wherein, through making up predistortion that gate terminal and the voltage between the source terminal at predistortion device MOSFET are carried out the nonlinear capacitance of predistortion device MOSFET and the nonlinear capacitance of amplifier MOSFET.
11. according to the method for claim 10, wherein, predistortion voltage comprises the nonlinear capacitance that the nonlinear capacitance that is similar to said amplifier MOSFET is provided to said predistorter MOSFET.
12., wherein, provide the nonlinear capacitance of the nonlinear capacitance that is similar to said amplifier MOSFET to comprise the combination of selecting the predistorter MOSFET size and the second biasing voltage signal value to said predistorter MOSFET according to the method for claim 11.
13. according to the method for claim 12, wherein, the combination of the said predistorter MOSFET size and the second biasing voltage signal value has defined the nonlinear capacitance with the input capacitance behavior on the contrary of said amplifier MOSFET.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2009/054023 WO2011021995A1 (en) | 2009-08-17 | 2009-08-17 | Radio frequency power amplifier with linearizing predistorter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102577136A true CN102577136A (en) | 2012-07-11 |
| CN102577136B CN102577136B (en) | 2014-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980161984.9A Active CN102577136B (en) | 2009-08-17 | 2009-08-17 | Radio frequency power amplifier with linearizing predistorter |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2467943A4 (en) |
| KR (3) | KR101814352B1 (en) |
| CN (1) | CN102577136B (en) |
| HK (1) | HK1173003A1 (en) |
| WO (1) | WO2011021995A1 (en) |
Cited By (4)
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| CN103138688A (en) * | 2013-01-25 | 2013-06-05 | 中国科学院微电子研究所 | Circuit unit |
| CN103248597B (en) * | 2013-05-17 | 2017-02-22 | 上海无线通信研究中心 | Self-adaptive digital pre-distortion system based on reference signal and initialization correction method |
| CN107786173A (en) * | 2016-08-25 | 2018-03-09 | 株式会社村田制作所 | Power amplification circuit |
| CN110677132A (en) * | 2019-09-05 | 2020-01-10 | 广州穗源微电子科技有限公司 | Radio frequency linear power amplifier circuit |
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| US9350300B2 (en) | 2014-01-28 | 2016-05-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power amplifier |
| US20240305389A1 (en) * | 2023-03-09 | 2024-09-12 | Apple Inc. | Radio-frequency Power Detector with Non-linearity Cancellation |
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- 2009-08-17 KR KR1020127006858A patent/KR101719387B1/en active IP Right Grant
- 2009-08-17 EP EP09848548.5A patent/EP2467943A4/en not_active Withdrawn
- 2009-08-17 KR KR1020177007015A patent/KR101766628B1/en active IP Right Grant
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| CN110677132B (en) * | 2019-09-05 | 2020-09-25 | 广州穗源微电子科技有限公司 | Radio frequency linear power amplifier circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101719387B1 (en) | 2017-03-23 |
| KR101766628B1 (en) | 2017-08-08 |
| KR101814352B1 (en) | 2018-01-04 |
| EP2467943A4 (en) | 2013-12-18 |
| WO2011021995A1 (en) | 2011-02-24 |
| KR20120065350A (en) | 2012-06-20 |
| CN102577136B (en) | 2014-11-05 |
| KR20170032486A (en) | 2017-03-22 |
| KR20170032485A (en) | 2017-03-22 |
| EP2467943A1 (en) | 2012-06-27 |
| HK1173003A1 (en) | 2013-05-03 |
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