CN102572323A - Image sensor pixel circuit - Google Patents
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- CN102572323A CN102572323A CN2011104450117A CN201110445011A CN102572323A CN 102572323 A CN102572323 A CN 102572323A CN 2011104450117 A CN2011104450117 A CN 2011104450117A CN 201110445011 A CN201110445011 A CN 201110445011A CN 102572323 A CN102572323 A CN 102572323A
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Abstract
The invention provides an image sensor pixel circuit which comprises a photocurrent generating unit and a photocurrent sensing unit. The photocurrent generating unit comprises a photosensitive diode and a first transistor; the anode of the photosensitive diode is grounded, and the cathode is connected with a source/drain electrode of the first transistor; the source/drain electrode of the first transistor is connected with an operating voltage; the photocurrent sensing unit comprises a magnet-sensitive resistor and a second transistor; the magnet-sensitive resistor is arranged in an inducted magnetic field generated by the photo-generated current of the photocurrent generating unit; the first end of the magnet-sensitive resistor is connected with an operation voltage, and the second end is connected with a source/drain electrode of the second transistor; and the source/drain electrode of the second transistor is the output end of the photocurrent sensing unit. Because the intensity of polarization of the magnet-sensitive resistor is used to record data, the information will never lose after the image sensor pixel circuit is deenergized.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of image sensor pixel circuit.
Background technology
Cmos image sensor is the manufacturing of a kind of CMOS of use manufacturing process, converts the optical signalling of image into the signal of telecommunication for transmission and the semiconductor device handled.Cmos image sensor generally is made up of photosensitive region and signal processing circuit.Common cmos image sensor is an active pixel type imageing sensor (APS) at present, wherein is divided into two big types of three pipe imageing sensors (3T) and four pipe imageing sensors (4T) again.
Be the image element circuit structure of standard 3T type imageing sensor in the prior art shown in the accompanying drawing 1A, comprise light sensitive diode D0, reset transistor M1, amplifier transistor M2 and row selecting transistor M3.The plus earth of light sensitive diode D0, negative pole connect the source electrode of reset transistor M1, and the drain electrode of reset transistor M1 meets operating voltage Vdd, and grid connects reseting controling signal; The grid of amplifier transistor M2 connects the common link of source electrode of positive pole and the reset transistor M1 of light sensitive diode D0, and drain electrode meets operating voltage Vdd, and source electrode connects the source electrode of row selecting transistor M3; The drain electrode of row selecting transistor M3 is an output, and grid connects capable selected control system signal.
Image element circuit shown in the accompanying drawing 1A at first resets when work, makes public then, reads at last.The homing action that at first carries out is meant reset transistor M1 grid is added high level, makes its conducting, and the A point voltage is reset to operating voltage Vdd.The exposure actions of carrying out then is to utilize the light sensitive diode D0 the be positioned at circuit surface (N that can be formed by N type heavily doped region and P type light doping section
+-P knot constitutes) depletion region serve as the photoelectron collecting zone; When incident light irradiation photosensitive area, produce electron hole pair, wherein photohole can be shifted to P type doped region and final inflow place end under internal electric field orders about; Light induced electron is then shifted to N type heavily doped region under the internal electric field effect; The A point voltage is descended, and light signal is strong more, the A point voltage descends many more.The action of carrying out at last of reading is voltage signal is amplified and through row selecting transistor M3 A point voltage signal to be read through the amplifier transistor M2 that is operated in the range of linearity.So the value of the voltage of output has just reflected the power of the light signal of light sensitive diode D0 institute perception.
Be the image element circuit structure of standard 4T type imageing sensor in the prior art shown in the accompanying drawing 1B, comprise light sensitive diode D0, capacitor C, reset transistor M1, amplifier transistor M2, row selecting transistor M3 and transfering transistor M4.The source electrode of transfering transistor M4 connects the positive pole of light sensitive diode and the common link of the source electrode of reset transistor M1, and the source electrode of drain electrode connection amplifier transistor M2, grid switch through and move control signal; The drain electrode of one termination transfering transistor M4 of capacitor C, other end ground connection.In the image element circuit shown in the accompanying drawing 1B, the collected photoelectron of its A point just can be stored on the capacitor C that floating diffusion region F orders only when transfering transistor M4 opens, and playback mode after this is identical with the 3T type dot structure shown in the accompanying drawing 1A.
No matter be 3T or 4T type image element circuit in the prior art; At least there is following shortcoming: because the photosensitive area that usually adopts the PN junction diode to form, when adopting 3T type or 4T type reading circuit, after reading and resetting; Photoelectron all flows into the Vdd end, has not existed; Even if do not carry out reset operation, photoelectron also can lose electric charge because of the parasitic capacitance RC discharge of reading node, therefore can't after power down, preserve information muchly.
In addition, when in radiation environment, adopting 4T type dot structure, FD point charge stored receives the influence that causes charge carrier from the radiation of substrate easily, causes severe noise.
Summary of the invention
Technical problem to be solved by this invention is, a kind of image sensor pixel circuit is provided, and guarantees still can keep the signal of telecommunication of pixel not lose after the image element circuit power down, and after restoring electricity, can read the picture element signal before the power down.
In order to address the above problem, the invention provides a kind of image sensor pixel circuit, comprise photoelectric current generation unit and photoelectric current sensing unit; Said photoelectric current generation unit comprises light sensitive diode and the first transistor, the plus earth of said light sensitive diode, and the negative pole of light sensitive diode connects the source/drain electrode of the first transistor, and the leakage/source electrode of the first transistor connects operating voltage; Said photoelectric current sensing unit comprises mistor and transistor seconds; Said mistor is arranged in the magnetic field of inducting that photogenerated current produced of photoelectric current generation unit; First end of said mistor connects operating voltage; Second end connects the source/drain electrode of transistor seconds, and the leakage/source electrode of transistor seconds is the output of photoelectric current sensing unit.
Optional, said image element circuit further comprises a signal conversion unit, the input of said signal conversion unit is connected to the output of photoelectric current sensing unit, is used for the current signal of photoelectric current sensing unit output is converted into voltage signal.
Optional, said signal conversion unit comprises the 3rd transistor and the 4th transistor, and the said the 3rd transistorized source/grounded drain, leakage/source electrode are connected with grid and as the input of said signal conversion unit altogether; The said the 4th transistorized grid is connected to the 3rd transistorized leakage/source electrode and grid is total to link, and the 4th transistorized leakage/source electrode is the output of said signal conversion unit, and source/drain electrode is connected to operating voltage.
Optional, said mistor comprises by first magnetosphere, insulating barrier and second magnetosphere and stacks gradually the three-decker that constitutes; First magnetosphere and the second magnetospheric material are selected from a kind of in iron oxide or rare earth or the ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is an aluminium oxide; Said first magnetosphere and the second magnetospheric material are the CoFeB material.
Optional, said mistor is arranged in the wiring layer that forms transistorized semiconductor substrate surface.
The invention has the advantages that; Adopt the polarization intensity size of mistor to come record data, therefore information forever can not lost after power down, is polarized by the external magnetic field once more up to it; Therefore this is a kind of non-volatile memories structure; If after power down, want to recover the view data before the power down, need only close the first transistor so and open transistor seconds, directly carry out read operation and get final product; And the NDRW non-destructive read write mode of mistor has determined it can carry out read-write operation many times in theory, makes obtain prolonging the useful life of image element circuit.
Further; Mistor is arranged in the wiring layer on surface of Semiconductor substrate; Therefore in radiation environment, can not receive because carrier accumulation and influence that the device electric property is caused in the radiogenic substrate silicon, so can be applied to occasion such as cosmic space.
Description of drawings
Accompanying drawing 1A is the image element circuit structure of standard 3T type imageing sensor in the prior art;
Accompanying drawing 1B is the image element circuit structure of standard 4T type imageing sensor in the prior art;
Accompanying drawing 2 is circuit diagrams of the said image sensor pixel circuit of this embodiment;
Accompanying drawing 3 is that the position between accompanying drawing 2 said mistors and the transistorized Semiconductor substrate of formation concerns sketch map.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to image sensor pixel circuit provided by the invention.
As do not have specified otherwise, and this embodiment alleged " connecing " refers to all that with " connection " electricity connects, meaning the rear and front end mouth is conducting on electricity.
Be the circuit diagram of the said image sensor pixel circuit of this embodiment shown in the accompanying drawing 2, this circuit diagram comprises photoelectric current generation unit 21, photoelectric current sensing unit 22 and signal conversion unit 23.The workflow of image element circuit is divided into exposure, samples and reads three phases.
Photoelectric current generation unit 21 comprises light sensitive diode D0 and the first transistor T1, the plus earth of said light sensitive diode D0, and negative pole connects the source electrode of the first transistor T1.The drain electrode of the first transistor T1 meets operating voltage end Vdd.Photoelectric current generation unit 21 is used to produce photogenerated current Ip.At exposure stage, will produce electron hole pair in the light sensitive diode D0, wherein photoelectron is piled up in the N type heavily doped region among the light sensitive diode D0, i.e. and the source electrode of the first transistor T1, and photoelectron quantity is proportional to intensity of illumination.During sampling; Grid at the first transistor T1 applies high level; Make the first transistor T1 conducting; So the photoelectron stream that is deposited in the first transistor T1 source electrode is to drain electrode; On the electric path of photoelectric current generation unit 21, produce one and be proportional to photoelectron number purpose photogenerated current
; Wherein e is an electron charge, and n is the photoelectron number, and t is transfer time.This photogenerated current Ip has produced the magnetic field B of inducting (being generally helical magnetic field) around it, this magnetic field B of inducting will have influence on the electrical state of photoelectric current sensing unit 22.
Photoelectric current sensing unit 22 comprises mistor R0 and transistor seconds T2; Said mistor R0 is arranged in the magnetic field B of inducting that the photogenerated current Ip of photoelectric current generation unit 21 produced; First end of said mistor R0 connects operating voltage end Vdd; Second end connects the drain electrode of transistor seconds T2, and the source electrode of transistor seconds T2 is the output of photoelectric current sensing unit 22.In the employing stage, the magnetic field B of inducting can be magnetized mistor R0.So-called mistor is meant the quasi-resistance that resistance value changes with the surrounding magnetic field Strength Changes.In this embodiment, photogenerated current Ip is big more, and the polarization intensity of mistor R0 is big more, and magneto-resistor is just more little, in other embodiment, also can mistor R0 increases with the increase of photogenerated current Ip.In sample phase, the size of mistor R0 has write down the power of optical charge signal, has accomplished signals sampling.Signal was read in the stage; Adding low level on the grid with the first transistor T1 closes it; On the grid of transistor seconds T2, add simultaneously high level it is opened, formed one this moment by operating voltage end Vdd, mistor R0 electric path to transistor seconds T2.Wherein the equivalent resistance of transistor seconds T2 is very little with respect to mistor R0, so the read current Im in the electric path depends primarily on the magneto-resistor size of mistor R0.The source electrode of transistor seconds T2 is the output of photoelectric current sensing unit 22, this output output read current Im.When the first transistor T1 opens in the said process, characterize the power of light signal through the induced field of photogenerated current Ip generation.In this simultaneously; The photoelectron that accumulates in the photodiode negative pole flows into vdd terminal through the first transistor T1; Therefore the mistor R0 in this circuit need not reset after a complete work period finishes, and this also is a significant advantage of the more traditional 4T type of this embodiment drive circuit.
In this embodiment; Said mistor R0 comprises by first magnetosphere, insulating barrier and second magnetosphere and stacks gradually the three-decker that constitutes; First magnetosphere and the second magnetospheric material are selected from a kind of in iron oxide or rare earth or the ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is an aluminium oxide.Mistor R0 can be with near the variation in magnetic field it, himself resistance of corresponding change, thereby the size of record current.First magnetosphere of the superiors is free magnetic layers, can be polarized by the external magnetic field, and polarization intensity depends on external magnetic field strength that its material is ferromagnet or rare earth magnet normally, like CoFeB etc.; The centre is a very thin insulating barrier, normally alumina materials A lO
xSecond magnetosphere of lower floor is a fixed magnetic layer, and it is invariable that its magnetic direction keeps, and material can be identical with free magnetic layer.In addition; Away from the surface of insulating barrier one extra play and can also be set further at fixed magnetic layer and pin down layer; Above-mentioned two-layer magnetic is opposite, and extra play can adopt the ruthenium layer, involves layer and can adopt the CoFeB magnetic material; Its polarised direction is opposite with the fixed magnetic layer polarised direction, further the polar orientation of held stationary magnetosphere magnetic.
Through very thin (several atomic layer) intermediate insulating layer, and the power of tunneling effect has just determined the size of magneto-resistor to electronics among the mistor R0 with quantum tunneling effect.If free magnetic layer (first magnetosphere) is identical with the polarised direction of fixed magnetic layer (second magnetosphere), the free magnetic layer polarization intensity is big more so, and electronics will tend to tunnelling more and cross insulating barrier, and resistance is just more little; Otherwise when the free magnetic layer polarization intensity hour, electronics just is difficult for tunnelling, reflects that magneto-resistor is just bigger.Free magnetic layer and fixed magnetic layer use the CoFeB material, can magneto resistive ratio be increased to more than 200%.So-called magneto resistive ratio is meant the value of the maximum value excursion of magneto-resistor divided by magneto-resistor, and the big more explanation resistance variations of magneto-resistor is sensitiveer, and sample effect is good more.
Because the storage medium of mistor R0 is with its magneto-resistor size, promptly the polarization intensity size is come record data, and therefore information forever can not lost after power down, polarized by the external magnetic field once more up to it, so this is a kind of non-volatile memories structure.If after power down, want to recover the view data before the power down, need only close the first transistor T1 so, open transistor seconds T2, directly carry out read operation and get final product.
And the above-mentioned NDRW non-destructive read write mode of mistor R0 has determined it can carry out read-write operation many times in theory, makes obtain prolonging the useful life of image element circuit.
It is voltage signal that the output signal of CMOS integrated circuit requires usually; So said image element circuit further comprises optional signal conversion unit 23; The input of said signal conversion unit 23 is connected to the output of photoelectric current sensing unit 22; Be the source electrode of transistor seconds T2, be used for the read current Im of photoelectric current sensing unit 22 outputs is converted into voltage signal.
In this embodiment, said signal conversion unit comprises the 3rd transistor T 3 and the 4th transistor T 4.The source ground of said the 3rd transistor T 3, drain electrode are connected with grid and as the input of said signal conversion unit 23 altogether.The grid of said the 4th transistor T 4 is connected to the 3rd transistor drain and grid is total to link, and draining is the output of said signal conversion unit 23, and source electrode selects transistor T 5 to be connected to operating voltage Vdd through row.The 3rd transistor T 3 converts the read current Im that imports into specific gate voltage as current mirror transistor, and through the 4th transistor T 4 outputs one voltage signal as the source class follower.The effect of row selecting transistor T5 is when a plurality of image element circuits constitute pel array, need select output line by line, when choosing this pixel and be expert at, the grid of row selecting transistor T5 is added high level, drives this pixel cell and exports signal.
In this embodiment, in order further to improve the radiation resistance of image element circuit, said mistor R0 is arranged in the wiring layer that forms transistorized semiconductor substrate surface.Be that said mistor R0 and the position that forms between the transistorized Semiconductor substrate 300 concern sketch map shown in the accompanying drawing 3; Further comprised the first transistor T1 and transistor seconds T2 in the Semiconductor substrate, mistor R0 further comprises first magnetosphere 311, insulating barrier 313, second magnetosphere 312, top electrode 321 and bottom electrode 322.The material of first magnetosphere 311 and second magnetosphere 312 is CoFeB, and the material of insulating barrier 313 is AlO
x, the material of top electrode 321 and bottom electrode 322 is a metal.Above-mentioned three level stack structure and upper/lower electrode all are arranged in the wiring layer on Semiconductor substrate 300 surfaces, and are connected (detailed annexation please refer to the circuit diagram shown in the accompanying drawing 2) through metal lead wire 351 and 352 with the first transistor T1 and transistor seconds T2 formation electricity.The purpose that it is pointed out that accompanying drawing 3 only is to show the position relation between the three, so the first transistor T1 and transistor seconds T2 are only drawn out structure outline, does not make shows in detail.The advantage of above-mentioned set-up mode is; Mistor R0 is arranged in the wiring layer on surface of Semiconductor substrate 300; Therefore in radiation environment, can not receive because carrier accumulation and influence that the device electric property is caused in the radiogenic substrate silicon, so can be applied to occasion such as cosmic space.
More than in the relevant transistorized annexation, source electrode all can be exchanged with drain electrode, does not have influence on normal signal logic in principle.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (7)
1. an image sensor pixel circuit is characterized in that, comprises photoelectric current generation unit and photoelectric current sensing unit; Said photoelectric current generation unit comprises light sensitive diode and the first transistor, the plus earth of said light sensitive diode, and the negative pole of light sensitive diode connects the source/drain electrode of the first transistor, and the leakage/source electrode of the first transistor connects operating voltage; Said photoelectric current sensing unit comprises mistor and transistor seconds; Said mistor is arranged in the magnetic field of inducting that photogenerated current produced of photoelectric current generation unit; First end of said mistor connects operating voltage; Second end connects the source/drain electrode of transistor seconds, and the leakage/source electrode of transistor seconds is the output of photoelectric current sensing unit.
2. image sensor pixel circuit according to claim 1; It is characterized in that; Said image element circuit further comprises a signal conversion unit; The input of said signal conversion unit is connected to the output of photoelectric current sensing unit, is used for the current signal of photoelectric current sensing unit output is converted into voltage signal.
3. image sensor pixel circuit according to claim 1; It is characterized in that; Said signal conversion unit comprises the 3rd transistor and the 4th transistor, and the said the 3rd transistorized source/grounded drain, leakage/source electrode are connected with grid and as the input of said signal conversion unit altogether; The said the 4th transistorized grid is connected to the 3rd transistorized leakage/source electrode and grid is total to link, and the 4th transistorized leakage/source electrode is the output of said signal conversion unit, and source/drain electrode is connected to operating voltage.
4. image sensor pixel circuit according to claim 1 is characterized in that, said mistor comprises by first magnetosphere, insulating barrier and second magnetosphere and stacks gradually the three-decker that constitutes.
5. image sensor pixel circuit according to claim 4 is characterized in that, first magnetosphere and the second magnetospheric material are selected from a kind of in iron oxide or rare earth or the ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is an aluminium oxide.
6. image sensor pixel circuit according to claim 5 is characterized in that, said first magnetosphere and the second magnetospheric material are the CoFeB material.
7. image sensor pixel circuit according to claim 1 is characterized in that, said mistor is arranged in the wiring layer that forms transistorized semiconductor substrate surface.
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| CN201110445011.7A CN102572323B (en) | 2011-12-28 | 2011-12-28 | Image sensor pixel circuit |
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| CN111800094A (en) * | 2020-07-17 | 2020-10-20 | 中山大学 | Sensor signal reading circuit |
| CN113138695A (en) * | 2021-04-20 | 2021-07-20 | 京东方科技集团股份有限公司 | Detection substrate, signal acquisition method thereof and display device |
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| CN102572323B (en) | 2014-12-10 |
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