CN102572323B - Image sensor pixel circuit - Google Patents
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- CN102572323B CN102572323B CN201110445011.7A CN201110445011A CN102572323B CN 102572323 B CN102572323 B CN 102572323B CN 201110445011 A CN201110445011 A CN 201110445011A CN 102572323 B CN102572323 B CN 102572323B
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Abstract
The invention provides an image sensor pixel circuit which comprises a photocurrent generating unit and a photocurrent sensing unit. The photocurrent generating unit comprises a photosensitive diode and a first transistor; the anode of the photosensitive diode is grounded, and the cathode is connected with a source/drain electrode of the first transistor; the source/drain electrode of the first transistor is connected with an operating voltage; the photocurrent sensing unit comprises a magnet-sensitive resistor and a second transistor; the magnet-sensitive resistor is arranged in an inducted magnetic field generated by the photo-generated current of the photocurrent generating unit; the first end of the magnet-sensitive resistor is connected with an operation voltage, and the second end is connected with a source/drain electrode of the second transistor; and the source/drain electrode of the second transistor is the output end of the photocurrent sensing unit. Because the intensity of polarization of the magnet-sensitive resistor is used to record data, the information will never lose after the image sensor pixel circuit is deenergized.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of image sensor pixel circuit.
Background technology
Cmos image sensor is the manufacture of a kind of CMOS of use manufacturing process, the optical signalling of image is converted to the semiconductor device of the signal of telecommunication for transmission and processing.Cmos image sensor is generally made up of photosensitive region and signal processing circuit.Common cmos image sensor is active pixel type imageing sensor (APS) at present, is wherein divided into again three pipe imageing sensors (3T) and the large class of four pipe imageing sensors (4T) two.
Shown in accompanying drawing 1A, be the image element circuit structure of prior art Plays 3T type imageing sensor, comprise light sensitive diode D0, reset transistor M1, amplifier transistor M2 and row selecting transistor M3.The plus earth of light sensitive diode D0, negative pole connects the source electrode of reset transistor M1, and the drain electrode of reset transistor M1 meets operating voltage Vdd, and grid connects reseting controling signal; The grid of amplifier transistor M2 connects the common link of the positive pole of light sensitive diode D0 and the source electrode of reset transistor M1, and drain electrode meets operating voltage Vdd, and source electrode connects the source electrode of row selecting transistor M3; The drain electrode of row selecting transistor M3 is output, and grid connects row and selects control signal.
Image element circuit shown in accompanying drawing 1A, in the time of work, first resets, and then exposes, and finally reads.First the homing action carrying out refers to reset transistor M1 grid is added to high level, makes its conducting, and A point voltage is reset to operating voltage Vdd.The exposure actions of then carrying out is the N that utilizes the light sensitive diode D0(that is positioned at circuit surface to be formed by N-type heavily doped region and P type light doping section
+-P knot forms) depletion region serve as photoelectron collecting zone, in the time that incident light irradiates photosensitive area, produce electron hole pair, wherein photohole can be shifted to P type doped region final inflow place end under internal electric field orders about, light induced electron is shifted to N-type heavily doped region under internal electric field effect, A point voltage is declined, and light signal is stronger, A point voltage declines more.The action of reading of finally carrying out is that amplifier transistor M2 by being operated in the range of linearity amplifies voltage signal and by row selecting transistor M3, A point voltage signal read.So the value of the voltage of output has just reflected the power of the light signal of light sensitive diode D0 institute perception.
Shown in accompanying drawing 1B, be the image element circuit structure of prior art Plays 4T type imageing sensor, comprise light sensitive diode D0, capacitor C, reset transistor M1, amplifier transistor M2, row selecting transistor M3 and transfering transistor M4.The source electrode of transfering transistor M4 connects the common link of the positive pole of light sensitive diode and the source electrode of reset transistor M1, the source electrode of drain electrode connection amplifier transistor M2, and grid switches through and moves control signal; The drain electrode of shifting transistor M4 is switched through in one end of capacitor C, other end ground connection.In image element circuit shown in accompanying drawing 1B, the collected photoelectron of its A point only in the time that transfering transistor M4 opens, just can be stored in the capacitor C that floating diffusion region F orders, and playback mode is after this identical with the 3T type dot structure shown in accompanying drawing 1A.
In prior art, no matter be 3T or 4T type image element circuit, at least there is following shortcoming: due to the photosensitive area that conventionally adopts PN junction diode to form, in the time adopting 3T type or 4T type reading circuit, after reading and resetting, photoelectron all flows into Vdd end, has not existed; Even if do not carry out reset operation, photoelectron also can lose electric charge because reading the parasitic capacitance RC electric discharge of node, therefore cannot after power down, preserve muchly information.
In addition, adopt 4T type dot structure in radiation environment time, the electric charge of FD point storage is easily subject to causing from the radiation of substrate the impact of charge carrier, causes serious noise.
Summary of the invention
Technical problem to be solved by this invention is, a kind of image sensor pixel circuit is provided, and ensures still can keep the signal of telecommunication of pixel not lose after image element circuit power down, and can read the picture element signal before power down after restoring electricity.
In order to address the above problem, the invention provides a kind of image sensor pixel circuit, comprise photoelectric current generation unit and photoelectric current sensing unit; Described photoelectric current generation unit comprises light sensitive diode and the first transistor, the plus earth of described light sensitive diode, and the negative pole of light sensitive diode connects the source/drain electrode of the first transistor, and the leakage/source electrode of the first transistor connects operating voltage; Described photoelectric current sensing unit comprises mistor and transistor seconds, described mistor is arranged in the Induced magnetic field that the photogenerated current of photoelectric current generation unit produces, the first end of described mistor connects operating voltage, the second end connects the source/drain electrode of transistor seconds, and the leakage/source electrode of transistor seconds is the output of photoelectric current sensing unit.
Optionally, described image element circuit further comprises a signal conversion unit, and the input of described signal conversion unit is connected to the output of photoelectric current sensing unit, for the current signal of photoelectric current sensing unit output is converted into voltage signal.
Optionally, described signal conversion unit comprises the 3rd transistor and the 4th transistor, described the 3rd transistorized source/grounded drain, and leakage/source electrode is connected with grid and altogether as the input of described signal conversion unit; Described the 4th transistorized grid is connected to the 3rd transistorized leakage/source electrode and grid link altogether, the output that the 4th transistorized leakage/source electrode is described signal conversion unit, and source/drain electrode is connected to operating voltage.
Optionally, described mistor comprises by the first magnetosphere, insulating barrier and the second magnetosphere and stacks gradually the three-decker forming; The first magnetosphere and the second magnetospheric material are selected from the one in iron oxide or rare earth or ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is aluminium oxide; Described the first magnetosphere and the second magnetospheric material are CoFeB material.
Optionally, described mistor is arranged in the wiring layer that forms transistorized semiconductor substrate surface.
The invention has the advantages that, adopt the polarization intensity size of mistor to carry out record data, therefore after power down, information forever can not be lost, until it is polarized by external magnetic field again, therefore this is a kind of non-volatile memories structure, recover the view data before power down if want after power down, need only close so the first transistor and open transistor seconds, directly carry out read operation; And the NDRW non-destructive read write mode of mistor has determined that it can carry out read-write operation many times in theory, and extended the useful life of image element circuit.
Further, mistor is arranged in the surperficial wiring layer of Semiconductor substrate, therefore in radiation environment, can not be subject to impact device electric property being caused due to carrier accumulation in radiogenic substrate silicon, therefore can be applied to the occasions such as cosmic space.
Brief description of the drawings
Accompanying drawing 1A is the image element circuit structure of prior art Plays 3T type imageing sensor;
Accompanying drawing 1B is the image element circuit structure of prior art Plays 4T type imageing sensor;
Accompanying drawing 2 is circuit diagrams of image sensor pixel circuit described in this embodiment;
Accompanying drawing 3 is mistors and form the position relationship schematic diagram between transistorized Semiconductor substrate described in accompanying drawing 2.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of image sensor pixel circuit provided by the invention is elaborated.
If no special instructions, this embodiment alleged " connecing " all refers to that with " connection " electricity connects, and mean rear and front end mouth is conducting in electricity.
Shown in accompanying drawing 2, be the circuit diagram of image sensor pixel circuit described in this embodiment, this circuit diagram comprises photoelectric current generation unit 21, photoelectric current sensing unit 22 and signal conversion unit 23.The workflow of image element circuit is divided into exposure, samples and read three phases.
Photoelectric current generation unit 21 comprises light sensitive diode D0 and the first transistor T1, the plus earth of described light sensitive diode D0, and negative pole connects the source electrode of the first transistor T1.The drain electrode of the first transistor T1 meets operating voltage end Vdd.Photoelectric current generation unit 21 is for generation of photogenerated current Ip.At exposure stage, in light sensitive diode D0, will produce electron hole pair, wherein photoelectron is piled up in the N-type heavily doped region in light sensitive diode D0, i.e. and the source electrode of the first transistor T1, and photoelectron quantity is proportional to intensity of illumination.When sampling, grid at the first transistor T1 applies high level, make the first transistor T1 conducting, be proportional to photoelectron number object photogenerated current so the photoelectron stream that is deposited in the first transistor T1 source electrode to drain electrode, produces one in the electric path of photoelectric current generation unit 21
, wherein e is electron charge, and n is photoelectron number, and t is transfer time.This photogenerated current Ip has produced an Induced magnetic field B(and has been generally helical magnetic field around it), this Induced magnetic field B will have influence on the electrical state of photoelectric current sensing unit 22.
Photoelectric current sensing unit 22 comprises mistor R0 and transistor seconds T2, described mistor R0 is arranged in the Induced magnetic field B that the photogenerated current Ip of photoelectric current generation unit 21 produces, the first end of described mistor R0 connects operating voltage end Vdd, the second end connects the drain electrode of transistor seconds T2, and the source electrode of transistor seconds T2 is the output of photoelectric current sensing unit 22.In the employing stage, Induced magnetic field B can magnetize mistor R0.So-called mistor, refers to the quasi-resistance that resistance value changes with surrounding magnetic field Strength Changes.In this embodiment, photogenerated current Ip is larger, and the polarization intensity of mistor R0 is larger, and magneto-resistor is just less, in other embodiment, also can increase with the increase of photogenerated current Ip by mistor R0.In sample phase, the size of mistor R0 has recorded the power of optical charge signal, has completed the sampling of signal.Signal was read in the stage, by adding low level on the grid of the first transistor T1, it is closed, on the grid of transistor seconds T2, add high level simultaneously it opened, now formed one by operating voltage end Vdd, mistor R0 the electric path to transistor seconds T2.Wherein the equivalent resistance of transistor seconds T2 is very little with respect to mistor R0, and therefore the read current Im in electric path depends primarily on the magneto-resistor size of mistor R0.The source electrode of transistor seconds T2 is the output of photoelectric current sensing unit 22, this output output read current Im.When in said process, the first transistor T1 opens, the induced field producing by photogenerated current Ip characterizes the power of light signal.In this simultaneously, the photoelectron that is gathered in photodiode negative pole flows into vdd terminal by the first transistor T1, therefore the mistor R0 in this circuit does not need to reset after a complete work period finishes, and this is also a significant advantage of the more traditional 4T type of this embodiment drive circuit.
In this embodiment, described mistor R0 comprises by the first magnetosphere, insulating barrier and the second magnetosphere and stacks gradually the three-decker forming, the first magnetosphere and the second magnetospheric material are selected from the one in iron oxide or rare earth or ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is aluminium oxide.Mistor R0 can be with near the variation in magnetic field it, himself resistance of corresponding change, thereby the size of record current.The first magnetosphere of the superiors is free magnetic layers, can be polarized by external magnetic field, and polarization intensity depends on external magnetic field strength, and its material is ferromagnet or rare earth magnet normally, as CoFeB etc.; Centre is a very thin insulating barrier, normally alumina materials A lO
x; The second magnetosphere of lower floor is fixed magnetic layer, and it is invariable that its magnetic direction keeps, and material can be identical with free magnetic layer.In addition, away from the surface of insulating barrier, one extra play and can also be further set at fixed magnetic layer and pin down layer, above-mentioned two-layer magnetic is contrary, extra play can adopt ruthenium layer, involve layer and can adopt CoFeB magnetic material, its polarised direction is contrary with fixed magnetic layer polarised direction, further stablizes the polar orientation of fixed magnetic layer magnetic.
Electronics in mistor R0 is with quantum tunneling effect by very thin (several atomic layer) intermediate insulating layer, and the power of tunneling effect has just determined the size of magneto-resistor.If free magnetic layer (the first magnetosphere) is identical with the polarised direction of fixed magnetic layer (the second magnetosphere), free magnetic layer polarization intensity is larger so, and electronics will more tend to tunnelling and cross insulating barrier, and resistance is just less; Otherwise when free magnetic layer polarization intensity hour, electronics is just difficult for tunnelling, reflects that magneto-resistor is just larger.Free magnetic layer and fixed magnetic layer use CoFeB material, magneto resistive ratio can be increased to more than 200%.So-called magneto resistive ratio refers to that the maximum value excursion of magneto-resistor is divided by the value of magneto-resistor, and the larger explanation resistance variations of magneto-resistor is sensitiveer, and sample effect is better.
Because the storage medium of mistor R0 is with its magneto-resistor size, polarization intensity size is carried out record data, and therefore after power down, information forever can not be lost, until it is polarized by external magnetic field again, therefore this is a kind of non-volatile memories structure.Recover the view data before power down if want after power down, need only close so the first transistor T1, open transistor seconds T2, directly carry out read operation.
And the above-mentioned NDRW non-destructive read write mode of mistor R0 has determined that it can carry out read-write operation many times in theory, and extended the useful life of image element circuit.
It is voltage signal that the output signal of CMOS integrated circuit requires conventionally, therefore described image element circuit further comprises optional signal conversion unit 23, the input of described signal conversion unit 23 is connected to the output of photoelectric current sensing unit 22, be the source electrode of transistor seconds T2, be converted into voltage signal for the read current Im that photoelectric current sensing unit 22 is exported.
In this embodiment, described signal conversion unit comprises the 3rd transistor T 3 and the 4th transistor T 4.The source ground of described the 3rd transistor T 3, drain electrode is connected with grid and altogether as the input of described signal conversion unit 23.The grid of described the 4th transistor T 4 is connected to the 3rd transistorized drain electrode and grid link altogether, drains as the output of described signal conversion unit 23, and source electrode selects transistor T 5 to be connected to operating voltage Vdd by row.The 3rd transistor T 3, as current mirror transistor, is converted to specific gate voltage by the read current Im of input, and exports a voltage signal by the 4th transistor T 4 as source class follower.The effect of row selecting transistor T5 is in the time that multiple image element circuits form pel array, need to select line by line to export, and in the time choosing this pixel and be expert at, the grid of row selecting transistor T5 is added to high level, drives this pixel cell output signal.
In this embodiment, in order further to improve the radiation resistance of image element circuit, described mistor R0 is arranged in the wiring layer that forms transistorized semiconductor substrate surface.It shown in accompanying drawing 3, is the position relationship schematic diagram between described mistor R0 and the transistorized Semiconductor substrate 300 of formation, Semiconductor substrate has further comprised the first transistor T1 and transistor seconds T2, and mistor R0 further comprises the first magnetosphere 311, insulating barrier 313, the second magnetosphere 312, top electrode 321 and bottom electrode 322.The material of the first magnetosphere 311 and the second magnetosphere 312 is CoFeB, and the material of insulating barrier 313 is AlO
x, the material of top electrode 321 and bottom electrode 322 is metal.Above-mentioned three level stack structure and upper/lower electrode are all arranged in the wiring layer on Semiconductor substrate 300 surfaces, and are connected (detailed annexation please refer to the circuit diagram shown in accompanying drawing 2) by metal lead wire 351 and 352 with the first transistor T1 and transistor seconds T2 formation electricity.The object that it is pointed out that accompanying drawing 3 is only to show the position relationship between three, therefore the first transistor T1 and transistor seconds T2 are only drawn out to structure outline, does not make shows in detail.The advantage of above-mentioned set-up mode is, mistor R0 is arranged in the surperficial wiring layer of Semiconductor substrate 300, therefore in radiation environment, can not be subject to impact device electric property being caused due to carrier accumulation in radiogenic substrate silicon, therefore can be applied to the occasions such as cosmic space.
In relevant transistorized annexation, source electrode and drain electrode all can be exchanged, and do not have influence in principle normal signal logic above.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. an image sensor pixel circuit, is characterized in that, comprises photoelectric current generation unit and photoelectric current sensing unit; Described photoelectric current generation unit comprises light sensitive diode and the first transistor, the plus earth of described light sensitive diode, and the negative pole of light sensitive diode connects the source/drain electrode of the first transistor, and the leakage/source electrode of the first transistor connects operating voltage; Described photoelectric current sensing unit comprises mistor and transistor seconds, described mistor is arranged in the Induced magnetic field that the photogenerated current of photoelectric current generation unit produces, the first end of described mistor connects operating voltage, the second end connects the source/drain electrode of transistor seconds, and the leakage/source electrode of transistor seconds is the output of photoelectric current sensing unit.
2. image sensor pixel circuit according to claim 1, it is characterized in that, described image element circuit further comprises a signal conversion unit, the input of described signal conversion unit is connected to the output of photoelectric current sensing unit, for the current signal of photoelectric current sensing unit output is converted into voltage signal.
3. image sensor pixel circuit according to claim 2, it is characterized in that, described signal conversion unit comprises the 3rd transistor and the 4th transistor, described the 3rd transistorized source/grounded drain, and leakage/source electrode is connected with grid and altogether as the input of described signal conversion unit; Described the 4th transistorized grid is connected to the 3rd transistorized leakage/source electrode and grid link altogether, the output that the 4th transistorized leakage/source electrode is described signal conversion unit, and source/drain electrode is connected to operating voltage.
4. image sensor pixel circuit according to claim 1, is characterized in that, described mistor comprises by the first magnetosphere, insulating barrier and the second magnetosphere and stacks gradually the three-decker forming.
5. image sensor pixel circuit according to claim 4, is characterized in that, the first magnetosphere and the second magnetospheric material are selected from the one in iron oxide or rare earth or ferro-cobalt boron alloy independently of one another, and the material of insulating barrier is aluminium oxide.
6. image sensor pixel circuit according to claim 5, is characterized in that, described the first magnetosphere and the second magnetospheric material are ferro-cobalt boron alloy material.
7. image sensor pixel circuit according to claim 1, is characterized in that, described mistor is arranged in the wiring layer that forms transistorized semiconductor substrate surface.
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| CN105388353B (en) * | 2015-11-26 | 2018-03-30 | 中国工程物理研究院电子工程研究所 | A kind of antinoise SOI transistor photoelectric current test system |
| CN111800094A (en) * | 2020-07-17 | 2020-10-20 | 中山大学 | Sensor signal reading circuit |
| CN113138695B (en) * | 2021-04-20 | 2024-03-15 | 京东方科技集团股份有限公司 | Detection substrate, signal acquisition method thereof and display device |
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| US6653154B2 (en) * | 2001-03-15 | 2003-11-25 | Micron Technology, Inc. | Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure |
| US7508434B2 (en) * | 2005-06-28 | 2009-03-24 | Motorola, Inc. | Image sensor architecture employing one or more floating gate devices |
| JP5422985B2 (en) * | 2008-12-08 | 2014-02-19 | ソニー株式会社 | Pixel circuit, solid-state imaging device, and camera system |
| CN101902583B (en) * | 2009-05-26 | 2013-03-13 | 英属开曼群岛商恒景科技股份有限公司 | Image sensor and high-conversion-gain and low-noise pixel readout circuit |
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