CN102572320A - Method for reducing height of CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor module and CMOS image sensor module - Google Patents
Method for reducing height of CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor module and CMOS image sensor module Download PDFInfo
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- CN102572320A CN102572320A CN2011103852832A CN201110385283A CN102572320A CN 102572320 A CN102572320 A CN 102572320A CN 2011103852832 A CN2011103852832 A CN 2011103852832A CN 201110385283 A CN201110385283 A CN 201110385283A CN 102572320 A CN102572320 A CN 102572320A
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Abstract
The invention provides a method for reducing height of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor module and a CMOS image sensor module. The corresponding method comprises the steps of: dividing a photosensitive array into two or more than two arrays, using the sum of resolution of all photosensitive arrays as resolution of the CMOS image sensor module and setting the photosensitive array divided as an independent optical imaging system; processing an analog signal captured by each photosensitive array to obtain an image signal; and processing images of the image signals of the photosensitive arrays and splicing the images of the photosensitive arrays processed to an integral image. In the invention, a large area high resolution photosensitive array in a chip is cut to form a plurality of small resolution photosensitive arrays which are the same in area and resolution. Each photosensitive array uses the independent optical system to image so as to reduce the height of the module without changing the resolution of the CMOS image sensor module.
Description
Technical field
The present invention relates to a kind of method and cmos image sensor module that reduces cmos image sensor module height, belong to technical field of image processing.
Background technology
Along with making rapid progress of cmos image sensor product technology development, high-resolution cmos image sensor begins to dominate the market gradually, shows more high pixel image processing, and more clear picture becomes easy.But thing followed problem is the pixel magnitude of cmos image sensor to improve constantly, and the size of unit picture element reduces the volume, particularly chip height more and more difficult of cmos image sensor chip also progressively near optical limit on the chip.And at present the product of focus---the portable set with camera function is more and more responsive to the volume of image sensor chip module the most in cmos image sensor market; Particularly 3G uses mobile phone, dual camera mobile phone, video telephone or the like, and just the direction towards high-resolution, ultra-thin fuselage develops.
As shown in Figure 1, be the structural representation of the cmos image sensor of prior art, what the footprint area ratio was maximum in the chip is photosensitive array, and shows that according to recent discovering the height of cmos image sensor module is directly proportional with the area of photosensitive array.Therefore at present various product is numerous and confused pursues increasingly high cmos image sensor pixel resolution, must cause the increase of photosensitive array area, increases chip module height and volume simultaneously, and the cost and the range of application of chip all produced tremendous influence.
Summary of the invention
The invention provides a kind of method and cmos image sensor module that reduces cmos image sensor module height, the area that is used for solving the cloudy photosensitive array of existing imageing sensor increases and the also problem of increase thereupon of the chip module height that causes and volume.
The objective of the invention is to realize through following technical scheme:
Reduce the method for cmos image sensor module height, comprising:
Photosensitive array is divided into two or more,, and sets independently optical imaging system for the photosensitive array of each division the resolution sum of whole photosensitive arrays resolution as said cmos image sensor module;
The analog signal that each photosensitive array is caught is handled, obtained picture signal;
The picture signal of photosensitive array is carried out image processing, and the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
A kind of cmos image sensor module comprises:
Be divided into two or more photosensitive array, and the photosensitive array of each division is provided with independently optical imaging system;
Analog circuit is used to receive the analog signal that photosensitive array catches and handles, and obtains picture signal and sends;
Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
Technical scheme by the invention described above provides can be found out, small size high resolution CMOS image sensor module of the present invention is through carrying out cutting with the large tracts of land high-resolution photosensitive array in the chip; Make it to become a plurality of areas little resolution photosensitive array identical with resolution, each photosensitive array adopts the separate optical system imaging, because imageing sensor module height is directly proportional with the photosensitive array area; After the high-resolution photosensitive array was by cutting, the area of the photosensitive array that each is little all dwindled, and highly also dwindles thereupon; Therefore; In this way, under the situation of the resolution that does not change the cmos image sensor module, the module height is reduced.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skill in the art; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is existing high resolution CMOS image sensor modular structure figure of the prior art;
The schematic flow sheet of the method for the reduction cmos image sensor module height that Fig. 2 provides for the specific embodiment of the invention;
The cmos image sensor modular structure sketch map that Fig. 3 provides for the specific embodiment of the invention one;
The cmos image sensor modular structure sketch map that Fig. 4 provides for the specific embodiment of the invention two;
The cmos image sensor modular structure sketch map that Fig. 5 provides for the specific embodiment of the invention three.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills belong to protection scope of the present invention not making the every other embodiment that is obtained under the creative work prerequisite.
This embodiment provides a kind of method that reduces cmos image sensor module height, and is as shown in Figure 2, specifically can comprise:
Step 21 is divided into two or more with photosensitive array, with the resolution sum of the whole photosensitive arrays resolution as said cmos image sensor module, and sets independently optical imaging system for the photosensitive array of each division.
Step 22 is handled the analog signal that each photosensitive array is caught, and obtains picture signal.
Step 23 is carried out image processing with the picture signal of photosensitive array, and the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
This embodiment also provides a kind of small size high resolution CMOS image sensor module of setting up according to the method for above-mentioned reduction cmos image sensor module height, comprising:
Be divided into two or more photosensitive array, and the photosensitive array of each division is provided with independently optical imaging system;
Analog circuit is used to receive the analog signal that photosensitive array catches and handles, and obtains picture signal and sends;
Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
The basic principle of the method for the reduction cmos image sensor module height that this embodiment provides is through with a plurality of areas of large tracts of land high-resolution photosensitive array cutting the becoming little resolution photosensitive array identical with resolution in the chip; And be directly proportional with the photosensitive array area according to imageing sensor module height, dwindle the module height.It can be applicable to 3G and uses mobile phone, and the dual camera mobile phone is in the design of camera module and production of ultra-thin type such as video telephone.Through concrete embodiment the present invention is described further below.
Embodiment one
As shown in Figure 3; The small size high resolution CMOS image sensor module of present embodiment comprises photosensitive array; Analog circuit and digital circuit, wherein: photosensitive array quantity is 4, all the resolution sum of photosensitive array is the resolution of this cmos image sensor module; Analog circuit is used to receive the analog signal of photosensitive array, sends to digital circuit after finishing dealing with; Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
Preferably, digital circuit and photosensitive array and analog circuit are integrated in the same module.
Preferably, the shared analog circuit of all 4 photosensitive arrays and a digital circuit.
The module integrated level of present embodiment is high, and can be applicable to 3G and use mobile phone, the dual camera mobile phone, ultra-thin type such as video telephone, and simple when being integrated in system platform, its external circuit connected mode is identical with the single photosensitive array module of prior art.
Embodiment two
As shown in Figure 4, the small size high resolution CMOS image sensor module of present embodiment comprises photosensitive array and analog circuit, and digital circuit is not integrated in this module.Wherein: photosensitive array quantity is 4, and all the resolution sum of photosensitive array is the resolution of this cmos image sensor module; Analog circuit is used to receive the analog signal of photosensitive array, and each photosensitive array all has one to one analog circuit accomplish analog, sends to digital circuit after finishing dealing with.Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
The module of present embodiment partly is placed in digital circuit in another chip, and is not integrated with photosensitive array and analog circuit, is that the photosensitive array partial design is simple, and is convenient to digital circuit and partly increases other digital signal processing modules.
Embodiment three
As shown in Figure 5; The small size high resolution CMOS image sensor module of present embodiment comprises photosensitive array; Analog circuit and digital circuit, wherein: photosensitive array quantity is 4, all the resolution sum of photosensitive array is the resolution of this cmos image sensor module; Analog circuit is used to receive the analog signal of photosensitive array, sends to digital circuit after finishing dealing with; Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
Preferably; Analog circuit quantity is 4; Digital circuit quantity is 4, and each photosensitive array all digital circuit and the analog circuit with unique is corresponding, and every suit has comprised the Circuits System of photosensitive array, analog circuit and digital circuit can independently accomplish image taking and work of treatment.
The junior unit that every suit in the module of present embodiment can be accomplished image taking and work of treatment separately can cut out separately and become independently cmos image sensor chip.When not carrying out cutting, this module still can be used as the high resolution CMOS image sensor chip and uses.
Technical scheme by the invention described above provides can be found out, small size high resolution CMOS image sensor module of the present invention is through carrying out cutting with the large tracts of land high-resolution photosensitive array in the chip; Make it to become a plurality of areas little resolution photosensitive array identical with resolution, each photosensitive array adopts the separate optical system imaging, because imageing sensor module height is directly proportional with the photosensitive array area; After the high-resolution photosensitive array was by cutting, the area of the photosensitive array that each is little all dwindled, and highly also dwindles thereupon; Therefore; In this way, under the situation of the resolution that does not change the cmos image sensor module, the module height is reduced.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (7)
1. reduce the method for cmos image sensor module height, it is characterized in that, comprising:
Photosensitive array is divided into two or more,, and sets independently optical imaging system for the photosensitive array of each division the resolution sum of whole photosensitive arrays resolution as said cmos image sensor module;
The analog signal that each photosensitive array is caught is handled, obtained picture signal;
The picture signal of photosensitive array is carried out image processing, and the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
2. the method for reduction cmos image sensor module height according to claim 1; It is characterized in that; Each said photosensitive array independently uses module internal corresponding simulating circuit and digital circuit collaborative work; Perhaps, all photosensitive arrays shared module internal corresponding simulating circuit and digital circuit.
3. the method for reduction cmos image sensor module height according to claim 1; It is characterized in that; When each said photosensitive array independently used module internal corresponding simulating circuit and digital circuit, the Circuits System that every suit in the module is comprised photosensitive array, analog circuit and digital circuit all was divided into low resolution cmos image sensor module and independently finishes the work.
4. a cmos image sensor module is characterized in that, comprising:
Be divided into two or more photosensitive array, and the photosensitive array of each division is provided with independently optical imaging system;
Analog circuit is used to receive the analog signal that photosensitive array catches and handles, and obtains picture signal and sends;
Digital circuit; Comprise image processing module and image mosaic module; Said image processing module is used to receive the picture signal of the photosensitive array that analog circuit sends; And carry out image processing, said image mosaic module is used for the image mosaic of the photosensitive array of finishing dealing with is become a complete image.
5. cmos image sensor module according to claim 4 is characterized in that, said digital circuit and photosensitive array and analog circuit are integrated in the same module, perhaps, and two modules in said digital circuit and photosensitive array office.
6. cmos image sensor module according to claim 4 is characterized in that, each said photosensitive array independently uses analog circuit and digital circuit collaborative work, perhaps all said photosensitive array common analog circuit and digital circuits.
7. cmos image sensor module according to claim 4; It is characterized in that; When each said photosensitive array independently used analog circuit and digital circuit, the Circuits System that every suit comprises photosensitive array, analog circuit and digital circuit was all divided and is divided into low resolution cmos image sensor module and independently finishes the work.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108401092A (en) * | 2017-02-04 | 2018-08-14 | 宁波舜宇光电信息有限公司 | Camera module and its molded case circuit board group part, circuit board and application |
CN108769499A (en) * | 2018-08-23 | 2018-11-06 | Oppo广东移动通信有限公司 | A kind of sensitive chip, camera module and electronic equipment |
CN108965674A (en) * | 2018-08-23 | 2018-12-07 | Oppo广东移动通信有限公司 | A kind of sensitive chip, camera module and electronic equipment |
CN109688301A (en) * | 2017-10-18 | 2019-04-26 | 宁波舜宇光电信息有限公司 | Photosensory assembly array and corresponding camera module array |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304282A (en) * | 2003-03-28 | 2004-10-28 | Fuji Photo Film Co Ltd | Digital camera and pixel information forming method |
CN1544990A (en) * | 2003-11-12 | 2004-11-10 | 浙江大学 | Imaging method as Dichronic imaging by four lens |
CN101094320A (en) * | 2006-06-19 | 2007-12-26 | 三星电机株式会社 | Camera module |
CN101115152A (en) * | 2006-07-27 | 2008-01-30 | 敦南科技股份有限公司 | Multi-channel image sensing module and sensing method |
US20080087799A1 (en) * | 2004-11-05 | 2008-04-17 | Toshinobu Sugiyama | Light Sensor And Pixel Selecting Method For Light Sensor |
CN101312201A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor and method for forming same |
CN101926171A (en) * | 2007-11-27 | 2010-12-22 | 卡普索影像股份有限公司 | Camera system with multiple pixel arrays on chip |
CN102158663A (en) * | 2011-04-15 | 2011-08-17 | 北京思比科微电子技术股份有限公司 | CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof |
-
2011
- 2011-11-28 CN CN2011103852832A patent/CN102572320A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304282A (en) * | 2003-03-28 | 2004-10-28 | Fuji Photo Film Co Ltd | Digital camera and pixel information forming method |
CN1544990A (en) * | 2003-11-12 | 2004-11-10 | 浙江大学 | Imaging method as Dichronic imaging by four lens |
US20080087799A1 (en) * | 2004-11-05 | 2008-04-17 | Toshinobu Sugiyama | Light Sensor And Pixel Selecting Method For Light Sensor |
CN101094320A (en) * | 2006-06-19 | 2007-12-26 | 三星电机株式会社 | Camera module |
CN101115152A (en) * | 2006-07-27 | 2008-01-30 | 敦南科技股份有限公司 | Multi-channel image sensing module and sensing method |
CN101312201A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor and method for forming same |
CN101926171A (en) * | 2007-11-27 | 2010-12-22 | 卡普索影像股份有限公司 | Camera system with multiple pixel arrays on chip |
CN102158663A (en) * | 2011-04-15 | 2011-08-17 | 北京思比科微电子技术股份有限公司 | CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108401092A (en) * | 2017-02-04 | 2018-08-14 | 宁波舜宇光电信息有限公司 | Camera module and its molded case circuit board group part, circuit board and application |
CN110089102A (en) * | 2017-02-04 | 2019-08-02 | 宁波舜宇光电信息有限公司 | Camera module and its molded case circuit board group part, circuit board and application |
US11039052B2 (en) | 2017-02-04 | 2021-06-15 | Ningbo Sunny Opotech Co., Ltd. | Camera module and molding circuit board assembly, circuit board and application thereof |
CN110089102B (en) * | 2017-02-04 | 2021-08-10 | 宁波舜宇光电信息有限公司 | Camera module and molded circuit board assembly thereof, circuit board and application |
US11451693B2 (en) | 2017-02-04 | 2022-09-20 | Ningbo Sunny Opotech Co., Ltd. | Camera module and molding circuit board assembly, circuit board and application thereof |
CN108401092B (en) * | 2017-02-04 | 2024-03-15 | 宁波舜宇光电信息有限公司 | Camera module, molded circuit board assembly thereof, circuit board and application |
CN109688301A (en) * | 2017-10-18 | 2019-04-26 | 宁波舜宇光电信息有限公司 | Photosensory assembly array and corresponding camera module array |
CN108769499A (en) * | 2018-08-23 | 2018-11-06 | Oppo广东移动通信有限公司 | A kind of sensitive chip, camera module and electronic equipment |
CN108965674A (en) * | 2018-08-23 | 2018-12-07 | Oppo广东移动通信有限公司 | A kind of sensitive chip, camera module and electronic equipment |
CN108769499B (en) * | 2018-08-23 | 2024-04-09 | Oppo广东移动通信有限公司 | Photosensitive chip, camera module and electronic equipment |
CN108965674B (en) * | 2018-08-23 | 2024-04-09 | Oppo广东移动通信有限公司 | Photosensitive chip, camera module and electronic equipment |
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Application publication date: 20120711 |