CN102570877B - Single-phase inverter - Google Patents

Single-phase inverter Download PDF

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CN102570877B
CN102570877B CN201110452095.7A CN201110452095A CN102570877B CN 102570877 B CN102570877 B CN 102570877B CN 201110452095 A CN201110452095 A CN 201110452095A CN 102570877 B CN102570877 B CN 102570877B
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switching tube
sinusoidal modulation
wave
modulation wave
conducting
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CN102570877A (en
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汪洪亮
赵为
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Sungrow Power Supply Co Ltd
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Sungrow Power Supply Co Ltd
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Abstract

The invention relates to a single-phase inverter which comprises a first switching tube, a second switching tube, a third switching tube, a fourth switching tube, a fifth switching tube, a sixth switching tube and a seventh switching tube. The positive terminal of a direct current (DC) power supply is connected with the negative terminal of the DC power supply through the first switching tube, the second switching tube, the seventh switching tube and the fourth switching tube which are sequentially in series connection with one another; the positive terminal of the DC power supply is connected with the negative terminal of the DC power supply through the fifth switching tube, the sixth switching tube, the third switching tube and the fourth switching tube which are sequentially in series connection with one another; a second terminal of the second switching tube and a second terminal of the sixth switching tube are alternating current (AC) output ends of the single-phase inverter; the second switching tube is in reverse parallel connection with a second diode; the third switching tube is in reverse parallel connection with a third diode; the sixth switching tube is in reverse parallel connection with a sixth diode; and the seventh switching tube is in reverse parallel connection with a seventh diode. According to the single-phase inverter provided by the embodiment of the invention, the quality of the output power of the inverter can be improved.

Description

A kind of single-phase inverter
Technical field
The present invention relates to electric and electronic technical field, particularly a kind of single-phase inverter.
Background technology
According to the difference of inverter applications occasion and control mode, can be divided into from net type inverter and grid type inverter.In grid type inverter, according to whether, with transformer, can be divided into transformer isolation type inverter and inverter without transformer again.Inverter without transformer, due to plurality of advantages such as its system configuration are simple, efficiency is high, volume is little, cost is low, has obtained development fast, has become the main flow of photovoltaic middle low power.
Inverter without transformer is due to the electrical isolation that can not realize between direct current input source and AC load, and leakage problem is one of key index of its reliability.And traditional H4 topology can not have been taken into account leakage current and high efficiency two aspect problems simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of single-phase inverter, for improving the output quality of power supply of inverter; And modulation strategy that single-phase inverter is applied to unity power factor and/or the modulation strategy of demand reactive power occasion are further provided.
The invention provides a kind of single-phase inverter, comprising: the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube;
The anode of DC power supply connects the negative terminal of DC power supply by the first switching tube, second switch pipe, the 7th switching tube, the 4th switching tube of connecting successively; The anode of DC power supply connects the negative terminal of DC power supply by the 5th switching tube, the 6th switching tube, the 3rd switching tube, the 4th switching tube of connecting successively;
The ac output end that the second end of the second end of second switch pipe and the 6th switching tube is described single-phase inverter;
Second switch pipe reverse parallel connection the second diode, the 3rd switching tube reverse parallel connection the 3rd diode, the 6th switching tube reverse parallel connection the 6th diode, and the 7th switching tube reverse parallel connection the 7th diode.
Preferably, described single-phase inverter also comprises filter circuit, and described filter circuit comprises the first inductance, the second inductance;
The second end of described second switch pipe is connected the second end of described the 6th switching tube by the first inductance, AC load and second inductance of connecting successively.
Preferably, when described single-phase inverter is applied to the occasion of unity power factor, six corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube.
Preferably, when the positive half cycle of output voltage, sequential working is once in each carrier cycle for the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd operation mode; When the negative half period of output voltage, sequential working is once in each carrier cycle for the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th operation mode.
Preferably, the conducting clock signal of described first and third switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switching tube conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th, seven switching tubes compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tubes cut-offs; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube conductings, otherwise described the 5th, seven switching tubes cut-offs;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switching tube compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off.
The present invention also provides a kind of single-phase inverter, comprising: the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube;
The anode of DC power supply connects the negative terminal of DC power supply by the first switching tube, second switch pipe, the 7th switching tube, the 4th switching tube of connecting successively; The anode of DC power supply connects the negative terminal of DC power supply by the 5th switching tube, the 6th switching tube, the 3rd switching tube, the 4th switching tube of connecting successively;
The ac output end that the second end of the second end of second switch pipe and the 6th switching tube is described single-phase inverter;
The first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube be reverse parallel connection the first diode, the second diode, the 3rd diode, tetrode, the 5th diode, the 6th diode and the 7th diode respectively.
Preferably, described single-phase inverter also comprises filter circuit, and described filter circuit comprises the first inductance, the second inductance;
The second end of described second switch pipe is connected the second end of described the 6th switching tube by the first inductance, AC load and second inductance of connecting successively.
Preferably, when described single-phase inverter is applied to the occasion of unity power factor, six corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube.
Preferably, at the positive half cycle of output voltage, sequential working is once in each carrier cycle for the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd operation mode; At the negative half period of output voltage, sequential working is once in each carrier cycle for the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th operation mode.
Preferably, the conducting clock signal of described first and third switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switching tube conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th, seven switching tubes compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tubes cut-offs; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube conductings, otherwise described the 5th, seven switching tubes cut-offs;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switching tube compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 4th switching tube cut-off.
Preferably, when described single-phase inverter is applied to the occasion of demand reactive power, eight corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube;
The 7th operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply negative busbar, the 4th diode, the 3rd diode, AC load, the second diode, then be divided into two-way, one road electric current is flowed through the first diode to DC power supply positive bus-bar, and another road electric current is flowed through the 5th diode to DC power supply positive bus-bar;
The 8th operation mode: five, six, seven, four switching tube conductings, the cut-off of rest switch pipe; Electric current flow through DC power supply negative busbar, the 4th diode, the 7th diode, AC load, the 6th diode, then be divided into two-way, one road electric current is flowed through the 5th diode to DC power supply positive bus-bar, and another road electric current is flowed through the first diode to DC power supply positive bus-bar.
Preferably, the conducting clock signal of described the first switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switching tube conducting, otherwise described the first switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is less than described triangular carrier, and the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe;
The conducting clock signal of described the 3rd switching tube compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is greater than described triangular carrier, and described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and described triangular carrier compare generation, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, in the 5th switching tube cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switching tube conducting, otherwise described the 5th switching tube cut-off;
The conducting clock signal of described the 6th switching tube compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is less than described triangular carrier, and described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off;
The conducting clock signal of described the 7th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is greater than described triangular carrier, and described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off.
Preferably, the conducting clock signal of described the first switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switching tube conducting, otherwise described the first switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switching tube cut-off;
The conducting clock signal of described second switch pipe is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe;
The conducting clock signal of described the 3rd switching tube is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave; In the 5th switching tube cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switching tube conducting, otherwise described the 5th switching tube cut-off;
The conducting clock signal of described the 6th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off;
The conducting clock signal of described the 7th switching tube is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off.
Compared with prior art, the present invention has the following advantages:
Described in the embodiment of the present invention, single-phase inverter adopts above-mentioned new topological structure---when described single-phase inverter is applied to the occasion of unity power factor, second switch pipe reverse parallel connection the second diode, the 3rd switching tube reverse parallel connection the 3rd diode, the 6th switching tube reverse parallel connection the 6th diode, and the 7th switching tube reverse parallel connection the 7th diode.Topological structure for single-phase inverter described in the embodiment of the present invention, can be by adopting unipolarity multiple-frequency modulation strategy when being applied to the occasion of unity power factor, the equivalent switching frequency of output is doubled, thereby realize the output quality of power supply that improves inverter.
Further, diode of the equal reverse parallel connection of each switching tube of single-phase inverter described in the embodiment of the present invention, described in the embodiment of the present invention, single-phase inverter just can meet two kinds of modulation strategies under unity power factor occasion and demand reactive power occasion like this.And while adopting the modulation strategy of demand reactive power, even if the modulation strategy that described single-phase inverter work at present in unity power factor state, does not need to carry out demand reactive power yet switches to the modulation strategy of unity power factor.
Further scheme, for new topological structure, by adopting unipolarity multiple-frequency modulation strategy, the equivalent switching frequency of output is doubled, further reduce output current ripple, improved the output quality of power supply of inverter, reduced the volume of filter inductance, thereby reduced the loss on filter inductance, and solved the leakage problem of single-phase non-isolated photovoltaic DC-to-AC converter simultaneously.
Accompanying drawing explanation
Fig. 1 is the topological diagram of single-phase inverter described in first embodiment of the invention;
Fig. 2 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the first operation mode;
Fig. 3 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the second operation mode;
Fig. 4 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 3rd operation mode;
Fig. 5 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 4th operation mode;
Fig. 6 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 5th operation mode;
Fig. 7 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 6th operation mode;
Fig. 8 is the topological diagram of single-phase inverter described in second embodiment of the invention;
Fig. 9 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the first operation mode;
Figure 10 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the second operation mode;
Figure 11 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 3rd operation mode;
Figure 12 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 4th operation mode;
Figure 13 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 5th operation mode;
Figure 14 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 6th operation mode;
Figure 15 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 7th operation mode;
Figure 16 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 8th operation mode.
Figure 17 is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under unity power factor occasion described in first and second embodiment of the present invention;
Figure 18 is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under the first demand reactive power occasion described in second embodiment of the invention;
Figure 19 is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under the second demand reactive power occasion described in second embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
The technical problem to be solved in the present invention is to provide a kind of single-phase inverter, improves the output quality of power supply of inverter, reduces the ripple of inductive current, has solved the problem of leakage current; And modulation strategy that single-phase inverter is applied to unity power factor and/or the modulation strategy of reactive power occasion are further provided.
With reference to Fig. 1, it is the topological diagram of single-phase inverter described in first embodiment of the invention.
Single-phase inverter described in first embodiment of the invention, comprising: the first switch transistor T A1, second switch pipe TA2, the 3rd switch transistor T A3, the 4th switch transistor T 4, the 5th switch transistor T B1, the 6th switch transistor T B2 and the 7th switching tube TB3.
The anode of DC power supply connects the negative terminal of DC power supply by the first switch transistor T A1, second switch pipe TA2, the 7th switching tube TB3, the 4th switch transistor T 4 of connecting successively; The anode of DC power supply connects the negative terminal of DC power supply by the 5th switch transistor T B1, the 6th switch transistor T B2, the 3rd switch transistor T A3, the 4th switch transistor T 4 of connecting successively;
The ac output end that the second end of the second end of second switch pipe TA2 and the 6th switch transistor T B2 is described single-phase inverter.The second end of the second end of second switch pipe TA2 and the 6th switch transistor T B2 can be connected with AC load.Described AC load is specifically as follows electrical network.
When described single-phase inverter is applied to the occasion of unity power factor, second switch pipe TA2 reverse parallel connection the second diode DA2, the 3rd switch transistor T A3 reverse parallel connection the 3rd diode DA3, the 6th switch transistor T B2 reverse parallel connection the 6th diode DB2, and the 7th switching tube TB3 reverse parallel connection the 7th diode DB3.
The anode of DC power supply (DC power supply positive bus-bar) connects the negative terminal (DC power supply negative busbar) of DC power supply by the first capacitor C 1.
Described in first embodiment of the invention, single-phase inverter adopts above-mentioned new topological structure---when described single-phase inverter is applied to the occasion of unity power factor, second switch pipe TA2 reverse parallel connection the second diode DA2, the 3rd switch transistor T A3 reverse parallel connection the 3rd diode DA3, the 6th switch transistor T B2 reverse parallel connection the 6th diode DB2, and the 7th switching tube TB3 reverse parallel connection the 7th diode DB3.Topological structure for single-phase inverter described in first embodiment of the invention, can be by adopting unipolarity multiple-frequency modulation strategy when being applied to the occasion of unity power factor, the equivalent switching frequency of output is doubled, thereby realize the output quality of power supply that improves inverter.
It should be noted that, in the embodiment of the present invention, the first switch transistor T A1, second switch pipe TA2, the 3rd switch transistor T A3, the 4th switch transistor T 4, the 5th switch transistor T B1, the 6th switch transistor T B2 and the 7th switching tube TB3 all can manage for IGBT.The first end of described the first switch transistor T A1, second switch pipe TA2, the 3rd switch transistor T A3, the 4th switch transistor T 4, the 5th switch transistor T B1, the 6th switch transistor T B2 and the 7th switching tube TB3 is collector electrode, and the second end is emitter.
Described the first switch transistor T A1, second switch pipe TA2, the 3rd switch transistor T A3, the 4th switch transistor T 4, the 5th switch transistor T B1, the 6th switch transistor T B2 and the 7th switching tube TB3 can also be the semiconductor device such as MOSFET.
Described in the embodiment of the present invention, the filter circuit of single-phase inverter specifically can adopt L-type filter, can also adopt LC type or LCL mode filter as filter circuit.
Referring to Fig. 1, single-phase inversion implement body can comprise that the first inductance L 1, the second inductance L 2, as filter circuit, further can also comprise the second capacitor C described in first embodiment of the invention.
Described second switch pipe TA2 is connected to the common port of described the 6th switch transistor T B2 and the 3rd switch transistor T A3 with the common port of the 7th switching tube TB3 by the first inductance L 1, electrical network VG and second inductance L 2 of connecting successively.The second capacitor C and electrical network VG are parallel with one another.
With reference to Fig. 2 to Fig. 7, Fig. 2 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the first operation mode; Fig. 3 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the second operation mode; Fig. 4 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 3rd operation mode; Fig. 5 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 4th operation mode; Fig. 6 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 5th operation mode; Fig. 7 be described in first embodiment of the invention single-phase inverter in the corresponding topological diagram of the 6th operation mode.
Described in first embodiment of the invention, single-phase inverter can be applied to the occasion of unity power factor.When described in first embodiment of the invention, single-phase inverter is applied to the modulation strategy of occasion of unity power factor, current circuit is referring to shown in Fig. 2 to Fig. 7, corresponding six operation modes (being heavy line during conducting, is fine line while there is no conducting):
The first operation mode: first, second, third and fourth switch transistor T A1, TA2, TA3, T4 conducting, rest switch pipe all ends; Referring to Fig. 2, electric current is through DC power supply positive bus-bar → the first switch transistor T A1 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3 → four switch transistor T 4 → DC power supply negative busbar;
The second operation mode: the second, four switch transistor T A2, T4 conducting, rest switch pipe all ends; Referring to Fig. 3, electric current is through the 6th diode DB2 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → six diode DB2.
The 3rd operation mode: first and third switch transistor T A1, TA3 conducting, rest switch pipe all ends; Referring to Fig. 4, electric current is through the 3rd switch transistor T A3 → seven diode DB3 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3.
The 4th operation mode: five, six, seven, four switch transistor T B1, TB2, TB3 conducting, rest switch pipe all ends; Referring to Fig. 5, electric current is through DC power supply positive bus-bar → five switch transistor T B1 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3 → four switch transistor T 4 → direct current negative busbar.
The 5th operation mode: six, four switch transistor T B2, T4 conducting, rest switch pipe all ends; Referring to Fig. 6, electric current is through second diode DA2 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L 1 → the second diode DA2.
The 6th operation mode: five, seven switching tube TB1, TB3 conducting, rest switch pipe all ends; Referring to Fig. 7, electric current is through the 7th switching tube TB3 → three diode DA3 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3.
Described in first embodiment of the invention, single-phase inverter is applied under unity power factor occasion, voltage and current same-phase (is voltage and is timing electric current for just, when voltage is negative, electric current is for negative), when voltage is positive half cycle, in the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd each carrier cycle of operation mode, sequential working once; When voltage is negative half period, in the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th each carrier cycle of operation mode, sequential working once.
Sinusoidal modulation wave as herein described is power frequency, and triangular carrier is high frequency, and for example triangular carrier is 20kHz.
Referring to Figure 17, this figure is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under unity power factor occasion described in first and second embodiment of the present invention.
The conducting clock signal of described first and third switch transistor T A1, TA3 compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switch transistor T A1, TA3 conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switch transistor T A1, TA3 cut-off;
The conducting clock signal of described second switch pipe TA2 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described second switch pipe TA2 conducting, otherwise described second switch pipe TA2 cut-off; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe TA2 cut-off;
The conducting clock signal of described the 4th switch transistor T 4 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switch transistor T 4 cut-offs; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switch transistor T 4 conductings, otherwise described the 4th switch transistor T 4 cut-offs;
The conducting clock signal of described the 5th, seven switching tube TB1, TB3 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tube TB1, TB3 cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube TB1, TB3 conducting, otherwise described the 5th, seven switching tube TB1, TB3 cut-off;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switch transistor T B2 compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switch transistor T B2 cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switch transistor T B2 conducting, otherwise described the 6th switch transistor T B2 cut-off.
Described in first embodiment of the invention, single-phase inverter has been constructed new circuit topology, introduce one pole multiple-frequency modulation, in conjunction with Figure 17, can see by adopting one pole multiple-frequency modulation, the equivalent switching frequency of exporting Vo is doubled, thus can be so that output current ripple further reduces, improved the output quality of power supply of inverter, reduce the volume of filter inductance, thereby reduced the loss on filter inductance, and solved the leakage problem in multiple-frequency modulation application of policies simultaneously.
Referring to Fig. 8, this figure is the topological diagram of single-phase inverter described in second embodiment of the invention.
Described in second embodiment of the invention, the difference of single-phase inverter and the first embodiment is: when described single-phase inverter is applied to the occasion of unity power factor and/or the occasion of demand reactive power, the first switch transistor T A1, second switch pipe TA2, the 3rd switch transistor T A3, the 4th switch transistor T 4, the 5th switch transistor T B1, the 6th switch transistor T B2 and the 7th switching tube TB3 be reverse parallel connection the first diode DA1, the second diode DA2, the 3rd diode DA3, the 4th diode D4, the 5th diode DB1, the 6th diode DB2 and the 7th diode DB3 respectively.
Described in second embodiment of the invention, single-phase inverter not only can be applied to the occasion of unity power factor, can also be applied to the occasion of demand reactive power.
Referring to Fig. 9 to Figure 14, Fig. 9 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the first operation mode; Figure 10 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the second operation mode; Figure 11 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 3rd operation mode; Figure 12 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 4th operation mode; Figure 13 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 5th operation mode; Figure 14 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 6th operation mode.
When described in second embodiment of the invention, single-phase inverter is applied to the modulation strategy of occasion of unity power factor, current circuit is referring to shown in Fig. 9 to Figure 14, corresponding six operation modes (being heavy line during conducting, is fine line while there is no conducting):
The first operation mode: first, second, third and fourth switch transistor T A1, TA2, TA3, T4 conducting, rest switch pipe all ends; Referring to Fig. 9, electric current is through DC power supply positive bus-bar → the first switch transistor T A1 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3 → four switch transistor T 4 → DC power supply negative busbar;
The second operation mode: the second, four switch transistor T A2, T4 conducting, rest switch pipe all ends; Referring to Figure 10, electric current is through the 6th diode DB2 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → six diode DB2.
The 3rd operation mode: first and third switch transistor T A1, TA3 conducting, rest switch pipe all ends; Referring to Figure 11, electric current is through the 3rd switch transistor T A3 → seven diode DB3 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3.
The 4th operation mode: five, six, seven, four switch transistor T B1, TB2, TB3 conducting, rest switch pipe all ends; Referring to Figure 12, electric current is through DC power supply positive bus-bar → five switch transistor T B1 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3 → four switch transistor T 4 → direct current negative busbar.
The 5th operation mode: six, four switch transistor T B2, T4 conducting, rest switch pipe all ends; Referring to Figure 13, electric current is through second diode DA2 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L 1 → the second diode DA2.
The 6th operation mode: five, seven switching tube TB1, TB3 conducting, rest switch pipe all ends; Referring to Figure 14, electric current is through the 7th switching tube TB3 → three diode DA3 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3.
Described in second embodiment of the invention, single-phase inverter is applied under unity power factor occasion, voltage and current same-phase (is voltage and is timing electric current for just, when voltage is negative, electric current is for negative), when voltage is positive half cycle, sequential working is once in each carrier cycle for the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd operation mode; When voltage is negative half period, sequential working is once in each carrier cycle for the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th operation mode.
Referring to Figure 17, this figure is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under unity power factor occasion described in first and second embodiment of the present invention.
Described in second embodiment of the invention, single-phase inverter is applied to the modulation strategy of the occasion of unity power factor:
The conducting clock signal of described first and third switch transistor T A1, TA3 compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switch transistor T A1, TA3 conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switch transistor T A1, TA3 cut-off;
The conducting clock signal of described second switch pipe TA2 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described second switch pipe TA2 conducting, otherwise described second switch pipe TA2 cut-off; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe TA2 cut-off;
The conducting clock signal of described the 4th switch transistor T 4 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switch transistor T 4 cut-offs; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switch transistor T 4 conductings, otherwise described the 4th switch transistor T 4 cut-offs;
The conducting clock signal of described the 5th, seven switching tube TB1, TB3 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tube TB1, TB3 cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube TB1, TB3 conducting, otherwise described the 5th, seven switching tube TB1, TB3 cut-off;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switch transistor T B2 compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switch transistor T B2 cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switch transistor T B2 conducting, otherwise described the 6th switch transistor T B2 cut-off.
Described in second embodiment of the invention, single-phase inverter has been constructed new circuit topology, introduce one pole multiple-frequency modulation, in conjunction with Figure 17, can see by adopting one pole multiple-frequency modulation, the equivalent switching frequency of exporting Vo is doubled, thus can be so that output current ripple further reduces, improved the output quality of power supply of inverter, reduce the volume of filter inductance, thereby reduced the loss on filter inductance, solved the leakage problem in multiple-frequency modulation application of policies.
Described in second embodiment of the invention, single-phase inverter is applied to the occasion of demand reactive power.
Referring to Fig. 9 to Figure 16, Fig. 9 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the first operation mode; Figure 10 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the second operation mode; Figure 11 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 3rd operation mode; Figure 12 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 4th operation mode; Figure 13 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 5th operation mode; Figure 14 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 6th operation mode; Figure 15 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 7th operation mode; Figure 16 be described in second embodiment of the invention single-phase inverter in the corresponding topological diagram of the 8th operation mode.
When described in second embodiment of the invention, single-phase inverter is applied to the modulation strategy of occasion of demand reactive power, current circuit is referring to shown in Fig. 9 to Figure 16, corresponding eight operation modes (being heavy line during conducting, is fine line while there is no conducting):
The first operation mode: first, second, third and fourth switch transistor T A1, TA2, TA3, T4 conducting, rest switch pipe all ends; Referring to Fig. 9, electric current is through DC power supply positive bus-bar → the first switch transistor T A1 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3 → four switch transistor T 4 → DC power supply negative busbar;
The second operation mode: the second, four switch transistor T A2, T4 conducting, rest switch pipe all ends; Referring to Figure 10, electric current is through the 6th diode DB2 → second switch pipe TA2 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → six diode DB2.
The 3rd operation mode: first and third switch transistor T A1, TA3 conducting, rest switch pipe all ends; Referring to Figure 11, electric current is through the 3rd switch transistor T A3 → seven diode DB3 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → three switch transistor T A3.
The 4th operation mode: five, six, seven, four switch transistor T B1, TB2, TB3 conducting, rest switch pipe all ends; Referring to Figure 12, electric current is through DC power supply positive bus-bar → five switch transistor T B1 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3 → four switch transistor T 4 → direct current negative busbar.
The 5th operation mode: six, four switch transistor T B2, T4 conducting, rest switch pipe all ends; Referring to Figure 13, electric current is through second diode DA2 → six switch transistor T B2 → the second inductance L 2 → electrical network VG → the first inductance L 1 → the second diode DA2.
The 6th operation mode: five, seven switching tube TB1, TB3 conducting, rest switch pipe all ends; Referring to Figure 14, electric current is through the 7th switching tube TB3 → three diode DA3 → the second inductance L 2 → electrical network VG → the first inductance L the 1 → seven switching tube TB3.
The 7th operation mode: first, second, third and fourth switch transistor T A1, TA2, TA3, T4 conducting, rest switch pipe all ends.Referring to Figure 15, electric current through DC power supply negative busbar → four diode D4 → three diode DA3 → the second inductance L 2 → electrical network VG → the first inductance L 1 → the second diode DA2 →, then be divided into two-way, one road electric current, the first diode DA1 → DC power supply positive bus-bar of flowing through, another road electric current the 5th diode DB1 → DC power supply positive bus-bar of flowing through.
The 8th operation mode: five, six, seven, four switch transistor T B1, TB2, TB3, T4 conducting, the cut-off of rest switch pipe.Referring to Figure 16, electric current is through DC power supply negative busbar → four diode D4 → seven diode DB3 → the first inductance L 1 → electrical network VG → the second inductance L the 2 → six diode DB2, then be divided into two-way, one road electric current the 5th diode DB1 → DC power supply positive bus-bar of flowing through, another road electric current first diode DA1 → DC power supply positive bus-bar of flowing through.
Due to the existence of above-mentioned eight operation modes of demand reactive power occasion, so each switching tube all needs reverse parallel connection to have a diode, so that above-mentioned current channel to be provided.
Described in second embodiment of the invention, single-phase inverter is applied to the occasion of the first demand reactive power, in same-phase, (being voltage and being timing electric current may be for just may be for not negative yet for the occasion electric current and voltage of demand reactive power, electric current may be for just also may be for negative when negative for voltage), therefore needing Reliable guarantee voltage is timing, for electric current provides two circulation paths, is that now the first operation mode and the 7th operation mode exist simultaneously; There is (being second, six switch transistor T A2, TB2 conducting simultaneously) in the second operation mode and the 5th operation mode simultaneously.While guaranteeing that voltage is negative, also for electric current provides two circulation paths, be that now the 4th operation mode and the 8th operation mode exist simultaneously, there is (being the 3rd, seven switching tube TA3, TB3 conducting simultaneously) in the 3rd operation mode and the 6th operation mode simultaneously.
Referring to Figure 18, this figure is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under the first demand reactive power occasion described in second embodiment of the invention.
Now, the conducting sequential of corresponding seven switching tubes of modulation strategy is:
The conducting clock signal of described the first switch transistor T A1 compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switch transistor T A1 conducting, otherwise described the first switch transistor T A1 cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switch transistor T A1 cut-off;
The conducting clock signal of described second switch pipe TA2 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is less than described triangular carrier, described second switch pipe TA2 conducting, otherwise described second switch pipe TA2 cut-off;
The conducting clock signal of described the 3rd switch transistor T A3 compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is greater than described triangular carrier, and described the 3rd switch transistor T A3 conducting, otherwise described the 3rd switch transistor T A3 cut-off;
The conducting clock signal of described the 4th switch transistor T 4 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and described triangular carrier compare generation, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switch transistor T 4 conductings, otherwise described the 4th switch transistor T 4 cut-offs; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switch transistor T 4 conductings, otherwise described the 4th switch transistor T 4 cut-offs;
The conducting clock signal of described the 5th switch transistor T B1 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, in the 5th switch transistor T B1 cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switch transistor T B1 conducting, otherwise described the 5th switch transistor T B1 cut-off;
The conducting clock signal of described the 6th switch transistor T B2 compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is less than described triangular carrier, and described the 6th switch transistor T B2 conducting, otherwise described the 6th switch transistor T B2 cut-off;
The conducting clock signal of described the 7th switching tube TB3 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is greater than described triangular carrier, described the 7th switching tube TB3 conducting, otherwise described the 7th switching tube TB3 cut-off.
Described in second embodiment of the invention, single-phase inverter is applied to the occasion of the second demand reactive power, in same-phase, (being voltage and being timing electric current may be for just may be for not negative yet for the occasion electric current and voltage of demand reactive power, electric current may be for just also may be for negative when negative for voltage), therefore needing Reliable guarantee voltage is timing, for electric current provides two circulation paths, is that now the first operation mode and the 7th operation mode exist simultaneously; There is (being second, seven switching tube TA2, TB3 conducting simultaneously) in the second operation mode and the 6th operation mode simultaneously; While guaranteeing that voltage is negative, also for electric current provides two circulation paths, be that now the 4th operation mode and the 8th operation mode exist simultaneously, there is (being the 3rd, six switch transistor T A3, TB2 conducting simultaneously) in the 3rd operation mode and the 5th operation mode simultaneously.
Referring to Figure 19, this figure is the conducting sequential schematic diagram that single-phase inverter is applied to seven switching tubes under the second demand reactive power occasion described in second embodiment of the invention.
Now, the conducting sequential of corresponding seven switching tubes of modulation strategy is:
The conducting clock signal of described the first switch transistor T A1 compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switching tube conducting, otherwise described the first switch transistor T A1 cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switch transistor T A1 cut-off;
The conducting clock signal of described second switch pipe TA2 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise described second switch pipe TA2 cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described second switch pipe TA2 conducting, otherwise described second switch pipe TA2 cut-off;
The conducting clock signal of described the 3rd switch transistor T A3 is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the 3rd switching tube conducting, otherwise described the 3rd switch transistor T A3 cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 3rd switch transistor T A3 conducting, otherwise described the 3rd switch transistor T A3 cut-off;
The conducting clock signal of described the 4th switch transistor T 4 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switch transistor T 4 cut-offs; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switch transistor T 4 conductings, otherwise described the 4th switch transistor T 4 cut-offs;
The conducting clock signal of described the 5th switch transistor T B1 compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave; In the 5th switch transistor T B1 cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switch transistor T B1 conducting, otherwise described the 5th switch transistor T B1 cut-off;
The conducting clock signal of described the 6th switch transistor T B2 is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 6th switch transistor T B2 conducting, otherwise described the 6th switch transistor T B2 cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switch transistor T B2 conducting, otherwise described the 6th switch transistor T B2 cut-off;
The conducting clock signal of described the 7th switching tube TB3 is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 7th switching tube TB3 conducting, otherwise described the 7th switching tube TB3 cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 7th switching tube TB3 conducting, otherwise described the 7th switching tube TB3 cut-off.
From the above, diode of the equal reverse parallel connection of each switching tube of single-phase inverter described in second embodiment of the invention, described in second embodiment of the invention, single-phase inverter just can meet two kinds of modulation strategies under unity power factor occasion and demand reactive power occasion like this.And when the modulation strategy of employing demand reactive power, even if the modulation strategy that described single-phase inverter work at present in unity power factor state, does not need to carry out demand reactive power yet switches to the modulation strategy of unity power factor.
Described in the embodiment of the present invention, single-phase inverter has been constructed new circuit topology, introduce one pole multiple-frequency modulation, in conjunction with shown in Figure 17 to 19, can see by adopting one pole multiple-frequency modulation, the equivalent switching frequency of exporting Vo is doubled, thus can be so that output current ripple further reduces, improved the output quality of power supply of inverter, reduce the volume of filter inductance, thereby reduced the loss on filter inductance, solved the leakage problem in multiple-frequency modulation application of policies.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.

Claims (10)

1. a single-phase inverter, is characterized in that, comprising: the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube;
The anode of DC power supply connects the negative terminal of DC power supply by the first switching tube, second switch pipe, the 7th switching tube, the 4th switching tube of connecting successively; The anode of DC power supply connects the negative terminal of DC power supply by the 5th switching tube, the 6th switching tube, the 3rd switching tube, the 4th switching tube of connecting successively;
The ac output end that the second end of the second end of second switch pipe and the 6th switching tube is described single-phase inverter;
Second switch pipe reverse parallel connection the second diode, the 3rd switching tube reverse parallel connection the 3rd diode, the 6th switching tube reverse parallel connection the 6th diode, and the 7th switching tube reverse parallel connection the 7th diode;
When described single-phase inverter is applied to the occasion of unity power factor, six corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube.
2. single-phase inverter according to claim 1, is characterized in that, described single-phase inverter also comprises filter circuit, and described filter circuit comprises the first inductance, the second inductance;
The second end of described second switch pipe is connected the second end of described the 6th switching tube by the first inductance, AC load and second inductance of connecting successively.
3. single-phase inverter according to claim 1, is characterized in that,
When the positive half cycle of output voltage, sequential working is once in each carrier cycle for the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd operation mode; When the negative half period of output voltage, sequential working is once in each carrier cycle for the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th operation mode.
4. single-phase inverter according to claim 1, is characterized in that,
The conducting clock signal of described first and third switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switching tube conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th, seven switching tubes compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tubes cut-offs; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube conductings, otherwise described the 5th, seven switching tubes cut-offs;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switching tube compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off.
5. a single-phase inverter, is characterized in that, comprising: the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube;
The anode of DC power supply connects the negative terminal of DC power supply by the first switching tube, second switch pipe, the 7th switching tube, the 4th switching tube of connecting successively; The anode of DC power supply connects the negative terminal of DC power supply by the 5th switching tube, the 6th switching tube, the 3rd switching tube, the 4th switching tube of connecting successively;
The ac output end that the second end of the second end of second switch pipe and the 6th switching tube is described single-phase inverter;
The first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, the 5th switching tube, the 6th switching tube and the 7th switching tube be reverse parallel connection the first diode, the second diode, the 3rd diode, tetrode, the 5th diode, the 6th diode and the 7th diode respectively;
When described single-phase inverter is applied to the occasion of unity power factor, six corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube;
When described single-phase inverter is applied to the occasion of demand reactive power, eight corresponding operation modes are respectively:
The first operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the first switching tube, second switch pipe, AC load, the 3rd switching tube, the 4th switching tube, DC power supply negative busbar;
The second operation mode: the second, four switching tube conductings, rest switch pipe all ends; Electric current flow through the 6th diode, second switch pipe, AC load, the 6th diode;
The 3rd operation mode: first and third switching tube conducting, rest switch pipe all ends; Electric current flow through the 3rd switching tube, the 7th diode, AC load, the 3rd switching tube;
The 4th operation mode: five, six, seven, four switching tube conductings, rest switch pipe all ends; Electric current flow through DC power supply positive bus-bar, the 5th switching tube, the 6th switching tube, AC load, the 7th switching tube, the 4th switching tube, direct current negative busbar;
The 5th operation mode: six, four switching tube conductings, rest switch pipe all ends; Electric current flow through the second diode, the 6th switching tube, AC load, the second diode;
The 6th operation mode: five, seven switching tube conductings, rest switch pipe all ends; Electric current flow through the 7th switching tube, the 3rd diode, AC load, the 7th switching tube;
The 7th operation mode: first, second, third and fourth switching tube conducting, rest switch pipe all ends; Electric current flow through DC power supply negative busbar, the 4th diode, the 3rd diode, AC load, the second diode, then be divided into two-way, one road electric current is flowed through the first diode to DC power supply positive bus-bar, and another road electric current is flowed through the 5th diode to DC power supply positive bus-bar;
The 8th operation mode: five, six, seven, four switching tube conductings, the cut-off of rest switch pipe; Electric current flow through DC power supply negative busbar, the 4th diode, the 7th diode, AC load, the 6th diode, then be divided into two-way, one road electric current is flowed through the 5th diode to DC power supply positive bus-bar, and another road electric current is flowed through the first diode to DC power supply positive bus-bar.
6. single-phase inverter according to claim 5, is characterized in that, described single-phase inverter also comprises filter circuit, and described filter circuit comprises the first inductance, the second inductance;
The second end of described second switch pipe is connected the second end of described the 6th switching tube by the first inductance, AC load and second inductance of connecting successively.
7. single-phase inverter according to claim 5, is characterized in that, when described single-phase inverter is applied to the occasion of unity power factor,
At the positive half cycle of output voltage, sequential working is once in each carrier cycle for the first operation mode of described single-phase inverter, the second operation mode, the first operation mode, the 3rd operation mode; At the negative half period of output voltage, sequential working is once in each carrier cycle for the 4th operation mode of described single-phase inverter, the 5th operation mode, the 4th operation mode, the 6th operation mode.
8. single-phase inverter according to claim 5, is characterized in that, when described single-phase inverter is applied to the occasion of unity power factor,
The conducting clock signal of described first and third switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described first and third switching tube conducting, otherwise described first and third switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described first and third switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the positive half period of the backward-wave of described sinusoidal modulation wave, described second switch pipe cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and described sinusoidal modulation wave and described triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th, seven switching tubes compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the negative half-cycle of the backward-wave of described sinusoidal modulation wave, and described the 5th, seven switching tubes cut-offs; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th, seven switching tube conductings, otherwise described the 5th, seven switching tubes cut-offs;
Conducting clock signal sinusoidal modulation wave and the triangular carrier of described the 6th switching tube compare generation; When the positive half period of described sinusoidal modulation wave, described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 4th switching tube cut-off.
9. single-phase inverter according to claim 5, is characterized in that, when described single-phase inverter is applied to the occasion of demand reactive power,
The conducting clock signal of described the first switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switching tube conducting, otherwise described the first switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switching tube cut-off;
The conducting clock signal of described second switch pipe compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is less than described triangular carrier, and the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe;
The conducting clock signal of described the 3rd switching tube compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is greater than described triangular carrier, and described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and described triangular carrier compare generation, when the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, in the 5th switching tube cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switching tube conducting, otherwise described the 5th switching tube cut-off;
The conducting clock signal of described the 6th switching tube compares generation by sinusoidal modulation wave and triangular carrier, when described sinusoidal modulation wave is less than described triangular carrier, and described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off;
The conducting clock signal of described the 7th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave, when the backward-wave of described sinusoidal modulation wave is greater than described triangular carrier, and described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off.
10. single-phase inverter according to claim 5, is characterized in that, when described single-phase inverter is applied to the occasion of demand reactive power,
The conducting clock signal of described the first switching tube compares generation by sinusoidal modulation wave and triangular carrier, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the first switching tube conducting, otherwise described the first switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave, described the first switching tube cut-off;
The conducting clock signal of described second switch pipe is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, the conducting of described second switch pipe, otherwise the cut-off of described second switch pipe;
The conducting clock signal of described the 3rd switching tube is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are greater than described triangular carrier, described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 3rd switching tube conducting, otherwise described the 3rd switching tube cut-off;
The conducting clock signal of described the 4th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 4th switching tube conducting, otherwise described the 4th switching tube cut-off;
The conducting clock signal of described the 5th switching tube compares generation by backward-wave and the triangular carrier of sinusoidal modulation wave; In the 5th switching tube cut-off described in the negative half-cycle of the backward-wave of described sinusoidal modulation wave; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 5th switching tube conducting, otherwise described the 5th switching tube cut-off;
The conducting clock signal of described the 6th switching tube is respectively by backward-wave and the triangular carrier of sinusoidal modulation wave, and sinusoidal modulation wave and triangular carrier compare generation; When the negative half-cycle of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off; When the negative half-cycle of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 6th switching tube conducting, otherwise described the 6th switching tube cut-off;
The conducting clock signal of described the 7th switching tube is respectively by sinusoidal modulation wave and triangular carrier, and the backward-wave of sinusoidal modulation wave and triangular carrier compare generation, when the positive half period of described sinusoidal modulation wave and described sinusoidal modulation wave are less than described triangular carrier, described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off; When the positive half period of backward-wave of described sinusoidal modulation wave and the backward-wave of described sinusoidal modulation wave are greater than described triangular carrier, described the 7th switching tube conducting, otherwise described the 7th switching tube cut-off.
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