CN102570049A - Graphene-based electromagnetic absorber - Google Patents

Graphene-based electromagnetic absorber Download PDF

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CN102570049A
CN102570049A CN2012100060501A CN201210006050A CN102570049A CN 102570049 A CN102570049 A CN 102570049A CN 2012100060501 A CN2012100060501 A CN 2012100060501A CN 201210006050 A CN201210006050 A CN 201210006050A CN 102570049 A CN102570049 A CN 102570049A
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graphene
silicon substrate
electromagnetic wave
substrate
centronucleus
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陆卫兵
姜韵
朱薇
董正高
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Southeast University
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Southeast University
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Abstract

The invention relates to a graphene-based electromagnetic absorber which comprises a silicon substrate and a silica substrate, wherein the silicon substrate and the silica substrate are overlapped. The silicon substrate is provided with stepped round holes, the silica substrate is provided with stepped projections matched with the stepped round holes, and the stepped projections are embedded into the stepped round holes. The silica substrate is provided with a graphene layer, one electrode of a bias voltage source is applied to the silicon substrate, and the other electrode is applied to the graphene layer. The graphene-based electromagnetic absorber can capture and absorb electromagnetic waves at a plurality of frequency points by designing the thicknesses of different areas of the silicon substrate and proper bias voltage. The graphene-based electromagnetic absorber has the advantages of simple structure, light weight and easiness in integration, and can be used for energy collection, local heating, etc.

Description

Electromagnetic wave absorber based on Graphene
Technical field
The present invention relates to a kind of electromagnetic wave absorber that uses Graphene to realize, relating in particular to a kind of dielectric constant based on Graphene can regulate and control the electromagnetic wave absorber that this characteristic realizes through gate voltage.Through designing suitable structure, this absorber can advance specific zone to electro-magnetic wave absorption, produces heat.
Background technology
2009; The Cui Tiejun of Southeast China university professor and Chen Qiang teach Na Ruimanuo and Kiel thank to dimension theory try out; Utilize the novel artificial electromagnetic material manufactured and designed " black hole " of under microwave frequency, working (" An omnidirectional electromagnetic absorber made of metamaterials; " New J.Phys.12,063,006 2010).The electromagnetism black hole have a wide range of applications the field with and important researching value.
Since finding Graphene in 2004, caused the research interest that people are strong.Professor G.W.Hanson proposes; The conductivity of Graphene can be by the Kubo formulate (" Dyadic Green ' s functions and guided surface waves for a surface conductivity model of graphene; " J.Appl.Phys.103 (6); 064302,2008).
Figure BDA0000129965340000011
Figure BDA0000129965340000012
Wherein-e is an electron charge,
Figure BDA0000129965340000013
Be Planck's constant, f d(ε)=1/ (1+exp [(ε-μ c)/(k BT)] be that Fermi's dirac distributes k) BBe Boltzmann constant, ω is an angular frequency, μ cBe chemical potential, Γ representes scattered power, and T representes temperature.Can know that by above-mentioned formula the conductivity of Graphene is along with the variation of chemical potential changes.Different electrical conductivity corresponding again different dielectric constants, their corresponding relation is: Re (ε G, eqThe σ of)=- G, i/ ω Δ+ε 0≈-σ G, i/ ω Δ, Im (ε G, eq)=σ G, r/ ω Δ, the loss of Graphene do | Im (ε G, eq)/Re (ε G, eq) |.So we can obtain the dielectric constant that we want through the chemical potential that changes Graphene, thereby can obtain different refractive indexes.Based on the above, Graphene is a kind of ideal material that can be used for making electromagnetic wave absorber.The relation of Graphene chemical potential and gate voltage is:
Figure BDA0000129965340000014
Wherein, ε 0, ε rRepresent air and sio respectively 2Dielectric constant, t is sio 2Thickness, so thereby we can be through changing the dielectric constant that chemical potential that gate voltage change Graphene changes Graphene.Up to now, still unmanned use Graphene designs electromagnetic wave absorber.
Summary of the invention
Technical problem: the present invention provides a kind of electromagnetic wave absorber based on Graphene; When incident electromagnetic wave runs into apparatus of the present invention; Electromagnetic wave will be caught by this device, be directed the entering centronucleus then, absorbed by centronucleus; Electromagnetic wave can not come out from centronucleus again, and light will be converted into heat energy at the centronucleus place.
The present invention adopts following technical scheme:
A kind of electromagnetic wave absorber based on Graphene; Comprise: silicon substrate that is superimposed together and silicon dioxide substrates; On silicon substrate, be provided with the stairstepping circular hole; On silicon dioxide substrates, be provided with the stairstepping projection suitable, and in the said stairstepping projection embedding stairstepping circular hole, on silicon dioxide substrates, be provided with graphene layer with the stairstepping circular hole.
The present invention is nethermost to be silicon substrate, spreads silicon dioxide substrates above the silicon substrate, repaves graphene layer above the silicon dioxide substrates, and a utmost point of bias voltage source is added on the silicon substrate, and another utmost point is added on the Graphene.The thickness of zones of different silicon substrate is different, and the silicon substrate of different-thickness has caused the silicon dioxide of different-thickness, thereby under same bias voltage, the chemical potential that the Graphene of zones of different is sensed is different.So the Graphene on the zones of different has different dielectric constants.When the dielectric constant on these zones satisfies certain concerning, just can realize catching absorption to electromagnetic.
With the prior art ratio, the present invention has the following advantages:
1, the present invention has realized the electromagnetic wave absorber based on Graphene first
2, this electromagnetic wave absorber based on Graphene passes through the thickness of design of Si substrate zones of different and suitable bias voltage, can work in a plurality of frequencies.
3, this is based on the electromagnetic wave absorber of Graphene, and is simple in structure, in light weight, is easy to integratedly, can be used for collecting multiple uses such as the energy, localized heating.
Description of drawings:
Fig. 1 is a schematic diagram of the present invention, and Graphene comprises centronucleus 5 zones and shell 6 zones, and centronucleus 5 zones are silicon substrate 7 pairing Graphene zones, and shell 6 zones are silicon substrate 8 pairing Graphene zones.When the dielectric constants in centronucleus 5 zone and shell 6 zones satisfy following relational expression (I), catch absorption to electromagnetic with regard to realizing.
&epsiv; ( r ) = &epsiv; b , r > R b &epsiv; b &times; ( R b r ) 2 &epsiv; c + i&gamma; , r < R c , R c &le; r &le; R b , - - - ( 1 )
Fig. 2 is a structural representation of the present invention, comprises silicon substrate 1 among the figure, silicon dioxide substrates 2, Graphene 3.One utmost point of bias voltage source 4 is added on the silicon substrate, and another utmost point is added on the Graphene.
Fig. 3 is the vertical view of silicon substrate 1; The be etched stairstepping circular hole of different-thickness of silicon substrate; Dielectric constant to satisfy Graphene corresponding on the silicon substrate area 7 possesses centronucleus 5 zones of satisfying relational expression (I); The dielectric constant of corresponding Graphene possesses shell 6 zones of satisfying relational expression (I) on the silicon substrate area 8, and the loss in centronucleus 5 zones is very big.
Fig. 4 is point source simulation result figure, and by visible among the figure, the spherical wave that the some source forcing rises is being directed entering centronucleus 5 through shell 6 time, absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Fig. 5 is the figure as a result of a branch of smooth emulation of center, by visible among the figure, when a branch of light of center incides shell 6, all can be directed entering centronucleus 5, is absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Fig. 6 is the figure as a result of a branch of smooth emulation of center lower side position, by visible among the figure, when a branch of light of center lower side position incides shell 6, all can be directed entering centronucleus 5, is absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Embodiment:
A kind of electromagnetic wave absorber based on Graphene; Comprise: the silicon substrate 1 and the silicon dioxide substrates 2 that are superimposed together; On silicon substrate 1, be provided with the stairstepping circular hole; On silicon dioxide substrates 2, be provided with the stairstepping projection suitable, and in the said stairstepping projection embedding stairstepping circular hole, on silicon dioxide substrates 2, be provided with graphene layer 3 with the stairstepping circular hole.
One utmost point of bias voltage source 4 is added on the Graphene, and another utmost point is added on the silicon substrate.In the zones of different etching of silicon substrate different thickness, like this, the silicon dioxide substrates that is layered on above the silicon substrate just has different thickness in the zone of correspondence.According to formula:
Figure BDA0000129965340000031
Figure BDA0000129965340000032
And the formula of Graphene gate voltage and silicon dioxide thickness:
Figure BDA0000129965340000033
We just can make Graphene centronucleus zone and the regional dielectric constant of shell satisfy relational expression (I), and the loss in Graphene centronucleus zone be very big through the thickness of design of Si substrate and suitable bias voltage.According to the above, just can realize this invention based on the electromagnetic wave absorber of Graphene.

Claims (2)

1. electromagnetic wave absorber based on Graphene; It is characterized in that; Comprise: silicon substrate that is superimposed together (1) and silicon dioxide substrates (2), on silicon substrate (1), be provided with the stairstepping circular hole, on silicon dioxide substrates (2), be provided with the stairstepping projection suitable with the stairstepping circular hole; And said stairstepping projection is embedded in the stairstepping circular hole, on silicon dioxide substrates (2), is provided with graphene layer (3).
2. a kind of electromagnetic wave absorber based on Graphene according to claim 1 is characterized in that, the size of each regional thickness of described silicon substrate and bias voltage can be regulated, to change the frequency of electro-magnetic wave absorption.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406201A (en) * 2015-12-15 2016-03-16 华东师范大学 Microwave reflector antenna provided with graphene optical co-axial window
CN105932426A (en) * 2016-05-30 2016-09-07 东南大学 Ultra-thin electromagnetic wave absorber based on electrolyte-regulated graphene

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CN102291970A (en) * 2011-05-06 2011-12-21 东南大学 Single frequency band microwave absorber and multiple frequency band microwave absorber
KR101097175B1 (en) * 2010-07-09 2011-12-22 아주대학교산학협력단 Saturable absorber comprising monolayer graphene and manufacturing method of the same
WO2011162955A2 (en) * 2010-06-22 2011-12-29 The Trustees Of The University Of Pennsylvania Manipulating and routing optical signal narrow paths on graphene and graphene as a platform for metamaterials
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EP2381756A2 (en) * 2010-04-26 2011-10-26 Nitto Denko Corporation Electromagnetic wave absorber
WO2011162955A2 (en) * 2010-06-22 2011-12-29 The Trustees Of The University Of Pennsylvania Manipulating and routing optical signal narrow paths on graphene and graphene as a platform for metamaterials
KR101097175B1 (en) * 2010-07-09 2011-12-22 아주대학교산학협력단 Saturable absorber comprising monolayer graphene and manufacturing method of the same
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105406201A (en) * 2015-12-15 2016-03-16 华东师范大学 Microwave reflector antenna provided with graphene optical co-axial window
CN105406201B (en) * 2015-12-15 2018-05-15 华东师范大学 A kind of microwave reflection surface antenna of graphene-containing Optical Coaxis window
CN105932426A (en) * 2016-05-30 2016-09-07 东南大学 Ultra-thin electromagnetic wave absorber based on electrolyte-regulated graphene

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Application publication date: 20120711