CN202487776U - Grapheme-based electromagnetic wave absorber - Google Patents
Grapheme-based electromagnetic wave absorber Download PDFInfo
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- CN202487776U CN202487776U CN2012200108559U CN201220010855U CN202487776U CN 202487776 U CN202487776 U CN 202487776U CN 2012200108559 U CN2012200108559 U CN 2012200108559U CN 201220010855 U CN201220010855 U CN 201220010855U CN 202487776 U CN202487776 U CN 202487776U
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- electromagnetic wave
- graphene
- silicon substrate
- grapheme
- wave absorber
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Abstract
A grapheme-based electromagnetic wave absorber comprises a silicon substrate and a silica substrate that are laminated together. The silicon substrate is provided with stepped circular holes and the silica substrate is equipped with stepped protrusions matching the stepped circular holes. The stepped protrusions are embedded into the stepped circular holes. A grapheme layer is arranged on the silica substrate. One pole of an offset voltage source is disposed on the silicon substrate and the other pole of the offset voltage source is disposed on the grapheme. Through a design of thickness and appropriate offset voltage in different areas of the silicon substrate, the grapheme-based electromagnetic wave absorber can capture and absorb electromagnetic waves at various frequency points. The grapheme-based electromagnetic wave absorber is simple in structure, light in weight and easy in integration, can be used for energy collection, partial heating and many other purposes.
Description
Technical field
The utility model relates to a kind of electromagnetic wave absorber that uses Graphene to realize, relating in particular to a kind of dielectric constant based on Graphene can regulate and control the electromagnetic wave absorber that this characteristic realizes through gate voltage.Through designing suitable structure, this absorber can advance specific zone to electro-magnetic wave absorption, produces heat.
Background technology
2009; The Cui Tiejun of Southeast China university professor and Chen Qiang teach Na Ruimanuo and Kiel thank to dimension theory try out; Utilize the novel artificial electromagnetic material manufactured and designed " black hole " of under microwave frequency, working (" An omnidirectional electromagnetic absorber made of metamaterials; " New J.Phys.12,063,006 2010).The electromagnetism black hole have a wide range of applications the field with and important researching value.
Since finding Graphene in 2004, caused the research interest that people are strong.Professor G.W.Hanson proposes; The conductivity of Graphene can be by the Kubo formulate (" Dyadic Green ' s functions and guided surface waves for a surface conductivity model of graphene; " J.Appl.Phys.103 (6); 064302,2008).
Wherein-e is an electron charge,
Be Planck's constant, f
d(ε)=1/ (1+exp [(ε-μ
c)/(k
BT)] be that Fermi's dirac distributes k)
BBe Boltzmann constant, ω is an angular frequency, μ
cBe chemical potential, Γ representes scattered power, and T representes temperature.Can know that by above-mentioned formula the conductivity of Graphene is along with the variation of chemical potential changes.Different electrical conductivity corresponding again different dielectric constants, their corresponding relation is: Re (ε
G, eqThe σ of)=-
G, i/ ω Δ+ε
0≈-σ
G, i/ ω Δ, Im (ε
G, eq)=σ
G, r/ ω Δ, the loss of Graphene do | Im (ε
G, eq)/Re (ε
G, eq) |.So we can obtain the dielectric constant that we want through the chemical potential that changes Graphene, thereby can obtain different refractive indexes.Based on the above, Graphene is a kind of ideal material that can be used for making electromagnetic wave absorber.The relation of Graphene chemical potential and gate voltage is:
Wherein, ε
0, ε
rRepresent air and sio respectively
2Dielectric constant, t is sio
2Thickness, so thereby we can be through changing the dielectric constant that chemical potential that gate voltage change Graphene changes Graphene.Up to now, still unmanned use Graphene designs electromagnetic wave absorber.
The utility model content
Technical problem: the utility model provides a kind of electromagnetic wave absorber based on Graphene; When incident electromagnetic wave runs into the utility model device; Electromagnetic wave will be caught by this device, be directed the entering centronucleus then, absorbed by centronucleus; Electromagnetic wave can not come out from centronucleus again, and light will be converted into heat energy at the centronucleus place.
The utility model adopts following technical scheme:
A kind of electromagnetic wave absorber based on Graphene; Comprise: silicon substrate that is superimposed together and silicon dioxide substrates; On silicon substrate, be provided with the stairstepping circular hole; On silicon dioxide substrates, be provided with the stairstepping projection suitable, and in the said stairstepping projection embedding stairstepping circular hole, on silicon dioxide substrates, be provided with graphene layer with the stairstepping circular hole.
The utility model is nethermost to be silicon substrate, spreads silicon dioxide substrates above the silicon substrate, repaves graphene layer above the silicon dioxide substrates, and a utmost point of bias voltage source is added on the silicon substrate, and another utmost point is added on the Graphene.The thickness of zones of different silicon substrate is different, and the silicon substrate of different-thickness has caused the silicon dioxide of different-thickness, thereby under same bias voltage, the chemical potential that the Graphene of zones of different is sensed is different.So the Graphene on the zones of different has different dielectric constants.When the dielectric constant on these zones satisfies certain concerning, just can realize catching absorption to electromagnetic.
With the prior art ratio, the utlity model has following advantage:
1, the utility model has been realized the electromagnetic wave absorber based on Graphene first
2, this electromagnetic wave absorber based on Graphene passes through the thickness of design of Si substrate zones of different and suitable bias voltage, can work in a plurality of frequencies.
3, this is based on the electromagnetic wave absorber of Graphene, and is simple in structure, in light weight, is easy to integratedly, can be used for collecting multiple uses such as the energy, localized heating.
Description of drawings
Fig. 1 is the schematic diagram of the utility model, and Graphene comprises centronucleus 5 zones and shell 6 zones, and centronucleus 5 zones are silicon substrate 7 pairing Graphene zones, and shell 6 zones are silicon substrate 8 pairing Graphene zones.When the dielectric constants in centronucleus 5 zone and shell 6 zones satisfy following relational expression (I), catch absorption to electromagnetic with regard to realizing.
Fig. 2 is the structural representation of the utility model, comprises silicon substrate 1 among the figure, silicon dioxide substrates 2, Graphene 3.One utmost point of bias voltage source 4 is added on the silicon substrate, and another utmost point is added on the Graphene.
Fig. 3 is the vertical view of silicon substrate 1; The be etched stairstepping circular hole of different-thickness of silicon substrate; Dielectric constant to satisfy Graphene corresponding on the silicon substrate area 7 possesses centronucleus 5 zones of satisfying relational expression (I); The dielectric constant of corresponding Graphene possesses shell 6 zones of satisfying relational expression (I) on the silicon substrate area 8, and the loss in centronucleus 5 zones is very big.
Fig. 4 is point source simulation result figure, and by visible among the figure, the spherical wave that the some source forcing rises is being directed entering centronucleus 5 through shell 6 time, absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Fig. 5 is the figure as a result of a branch of smooth emulation of center, by visible among the figure, when a branch of light of center incides shell 6, all can be directed entering centronucleus 5, is absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Fig. 6 is the figure as a result of a branch of smooth emulation of center lower side position, by visible among the figure, when a branch of light of center lower side position incides shell 6, all can be directed entering centronucleus 5, is absorbed by centronucleus 5, and electromagnetic wave can not come out from centronucleus 5 again.
Embodiment
A kind of electromagnetic wave absorber based on Graphene; Comprise: the silicon substrate 1 and the silicon dioxide substrates 2 that are superimposed together; On silicon substrate 1, be provided with the stairstepping circular hole; On silicon dioxide substrates 2, be provided with the stairstepping projection suitable, and in the said stairstepping projection embedding stairstepping circular hole, on silicon dioxide substrates 2, be provided with graphene layer 3 with the stairstepping circular hole.
One utmost point of bias voltage source 4 is added on the Graphene, and another utmost point is added on the silicon substrate.In the zones of different etching of silicon substrate different thickness, like this, the silicon dioxide substrates that is layered on above the silicon substrate just has different thickness in the zone of correspondence.According to formula:
And the formula of Graphene gate voltage and silicon dioxide thickness:
We just can make Graphene centronucleus zone and the regional dielectric constant of shell satisfy relational expression (I), and the loss in Graphene centronucleus zone be very big through the thickness of design of Si substrate and suitable bias voltage.According to the above, just can realize this utility model based on the electromagnetic wave absorber of Graphene.
Claims (1)
1. electromagnetic wave absorber based on Graphene; It is characterized in that; Comprise: silicon substrate that is superimposed together (1) and silicon dioxide substrates (2), on silicon substrate (1), be provided with the stairstepping circular hole, on silicon dioxide substrates (2), be provided with the stairstepping projection suitable with the stairstepping circular hole; And said stairstepping projection is embedded in the stairstepping circular hole, on silicon dioxide substrates (2), is provided with graphene layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200108559U CN202487776U (en) | 2012-01-11 | 2012-01-11 | Grapheme-based electromagnetic wave absorber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200108559U CN202487776U (en) | 2012-01-11 | 2012-01-11 | Grapheme-based electromagnetic wave absorber |
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| Publication Number | Publication Date |
|---|---|
| CN202487776U true CN202487776U (en) | 2012-10-10 |
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ID=46962167
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| CN2012200108559U Expired - Fee Related CN202487776U (en) | 2012-01-11 | 2012-01-11 | Grapheme-based electromagnetic wave absorber |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570049A (en) * | 2012-01-11 | 2012-07-11 | 东南大学 | Graphene-based electromagnetic absorber |
| CN108732794A (en) * | 2018-04-27 | 2018-11-02 | 北京大学 | Terahertz switch based on periodical graphene-structured absorption characteristic and control method |
| CN111262043A (en) * | 2018-12-03 | 2020-06-09 | 桂林电子科技大学 | Terahertz adjustable wave absorber based on Dirac semimetal |
-
2012
- 2012-01-11 CN CN2012200108559U patent/CN202487776U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102570049A (en) * | 2012-01-11 | 2012-07-11 | 东南大学 | Graphene-based electromagnetic absorber |
| CN108732794A (en) * | 2018-04-27 | 2018-11-02 | 北京大学 | Terahertz switch based on periodical graphene-structured absorption characteristic and control method |
| CN108732794B (en) * | 2018-04-27 | 2020-01-21 | 北京大学 | Terahertz switch based on periodic graphene structure absorption characteristics and control method |
| CN111262043A (en) * | 2018-12-03 | 2020-06-09 | 桂林电子科技大学 | Terahertz adjustable wave absorber based on Dirac semimetal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 Termination date: 20130111 |