CN102569655A - Nitrogen-side gallium nitride napped-side solar battery and production method thereof - Google Patents

Nitrogen-side gallium nitride napped-side solar battery and production method thereof Download PDF

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CN102569655A
CN102569655A CN2012100108445A CN201210010844A CN102569655A CN 102569655 A CN102569655 A CN 102569655A CN 2012100108445 A CN2012100108445 A CN 2012100108445A CN 201210010844 A CN201210010844 A CN 201210010844A CN 102569655 A CN102569655 A CN 102569655A
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冯倩
李倩
郝跃
邢涛
王强
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Xidian University
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Abstract

The invention discloses a nitrogen-side gallium nitride napped-side solar battery and a production method thereof, which mainly solve the problems of the present solar battery that the efficiency is low and the cost is high. The nitrogen-side gallium nitride napped-side solar battery comprises a sapphire substrate (1), aluminum nitride (AlN) buffering layer (2), an extension layer (3), a cathode (4), an organic polymer layer (5) and an anode (6), wherein the AlN buffering layer (2) adopts metal-organic chemical vapor deposition (MOCVD) growth, and the thickness is 150nm to 200nm; the extension layer (3) adopts a nitrogen surface n-GaN grown by the MOCVD with the thickness of 2 to 3 micrometers and the electronic density of 1.0*1017cm<-3> to 2.0*1018cm<-3>, the surface which is contacted with the organic polymer layer (5) is a recess napped surface, the density of the recesses is 1.0*107cm<-2> to 4.0*108cm<-2>, and the depth is 450 nm to 1.5 micrometers; the cathode (4) is formed by depositing titanium (Ti) and aluminum (Al) on the nitrogen side n-GaN layer; the organic polymer layer (5) is formed by spin coating on the surface of the nitrogen side n-GaN layer, and the thickness is 50 to 80nm; and the anode (6) is formed by depositing gold Au on the organic polymer layer (5). The process is simple, the cost is low, the photoelectric conversion efficiency is high, and the nitrogen-side gallium nitrode napped-side solar battery and the production method can be used for the commercial and civil power generation systems.

Description

Nitrogen surface gallium nitride matte solar cell and preparation method thereof
Technical field
The invention belongs to microelectronics technology, particularly a kind of solar cell, i.e. nitrogen surface gallium nitride matte solar cell.Specifically growth one deck crystal orientation is the nitrogen face n-GaN layer of [0001] on sapphire; Utilize the KOH solution of dilution that matteization carry out in the surface of nitrogen face GaN; GaN surface spin coating one deck electroconductive organic film after matteization forms good Schottky contacts, realizes photovoltaic property.
Technical background
Development of modern industry has strengthened demands for energy on the one hand, causes energy crisis, in the use of conventional energy resource, discharges great amount of carbon dioxide gas on the other hand, causes global " greenhouse effect ".For this reason, the dependence to conventional energy resource is tried hard to break away from by various countries, and the accelerated development regenerative resource is as a kind of very important regenerative resource.Safe and reliable, noiseless, pollution-free that solar energy has, energy is available anywhere, and not limited by the region; Need not consume fuel, mechanical rotating part, failure rate is low; Easy maintenance can unattended duty, and the construction period is short; Scale is random, need not the frame transmission line, and can make countries in the world be full of keen interest with advantages such as building combine easily to utilizing solar power generation.
Solar cell mainly is made up of light absorbing zone, electron transfer layer, hole transmission layer and two electrodes of negative and positive.After on the light absorbing zone of solar light irradiation at battery; Light absorbing zone absorbs solar photon and forms electron-hole pair through photon excitation and since in build electromotive force effect, excite the electronics of formation to arrive negative electrode through electron transfer layer; And the hole arrives anode through hole transmission layer; Make negative and positive the two poles of the earth form electrical potential difference, i.e. the output voltage of solar cell, thus realize by the conversion of luminous energy to electric energy.Traditional solar cell is divided into two kinds of inorganic solar cell and organic solar batteries basically.
The material of inorganic solar cell light absorbing zone, electron transfer layer and hole transmission layer is an inorganic material.For example wide because of its absorption spectrum ranges with the solar cell of silicon and GaAs preparation, carrier mobility is high, and diffusion length is long; Thermal stability is high; Characteristics such as mechanical strength is big and higher photoelectric conversion efficiency is arranged, but this inorganic solar cell cost is high, and toxicity is big; Material source is rare, is difficult to large-scale application.
The light absorbing zone of organic photovoltaic cell, electron transfer layer and hole transmission layer are organic material.It is low for example to be with dye-sensitized cell and organic polymer that the organic solar batteries of representative has a cost, and processing technology is simple, and is in light weight, characteristics such as ultra-thin and flexible, absorption coefficient height, very suitable large-area preparation and personalized application; But the mobility of charge carrier rate is crossed low than little 3 one magnitude of inorganic material in this organic substance material; Exciton diffusion length is short to be 10nm; Can't absorb 60% the infrared part energy that has accounted for whole energy in the solar spectrum, make that the photoelectric conversion efficiency of organic solar batteries is lower.Characteristics such as for this reason, people attempt the inorganic material absorption spectrum ranges is wide, and carrier mobility is high, and diffusion length is long, and thermal stability is high, and mechanical strength is big and organic advantages get up to prepare inorganic-organic mixed solar cell.
At present research is more is based on semiconductor material with wide forbidden band ZnO and TiO 2Hybrid solar cell; Though they do not absorb in visible-range; But has higher electronic transmission performance, synthesis technique is simple, with low cost; Low, the good stability of toxicity, the advantage that useful life is long has potential using value in inorganic nano-crystal-polymer solar battery field.Especially TiO 2Nano material, it can be prepared into the continuous structure of nanoporous, makes whole organic polymer can be filled in the middle of the pore, has not only reduced the thickness of device greatly, and has improved the open circuit voltage and the fill factor, curve factor of device, with the exception of this, TiO 2Can also be used as the optics separate layer, the efficient that helps to collect more electronics and then improve device.
Except TiO 2Outside two kinds of semiconductor material with wide forbidden band of ZnO, gallium nitride (GaN) material that also has developed recently to get up, it belongs to direct gap semiconductor, and it is wide to have a forbidden band, and carrier mobility is high, and thermal conductivity is high, and is high pressure resistant, high temperature resistant, anticorrosive, outstanding advantage such as radioresistance; But the hybrid solar cell of processing at present not only production cost is high, and its photoelectric conversion efficiency is still lower, the conversion efficiency less than 40% that it is maximum.
Summary of the invention
The objective of the invention is to deficiency, propose nitrogen surface gallium nitride matte solar cell and preparation method thereof,, enlarge its range of application under relatively low cost, to improve the efficient of mixing solar cell to above-mentioned prior art.
The technical thought that realizes the object of the invention is; Utilize nitrogen face GaN material in alkaline solution, to be easy to realize the characteristics of corrosion area; Through the surperficial suede raising organic macromolecule polymer compactedness of GaN, improve the performance of mixing solar cell, its technical scheme is following:
Battery of the present invention; Comprise from bottom to top: Sapphire Substrate, AlN resilient coating, epitaxial loayer, negative electrode, organic polymer layers and anode; It is characterized in that epitaxial loayer adopts nitrogen face n-GaN; And the contact-making surface place of this nitrogen face n-GaN layer and organic polymer layers adopts suede structure, and promptly nitrogen face n-GaN surface is covered with depression, and the density of its depression is 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is 450nm-1.5 μ m.
Prepare the method for the above-mentioned battery of the present invention, comprise the steps:
(1) on Sapphire Substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 150-200nm;
(2) on the AlN resilient coating, adopting MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer;
(3) specimen material that will grow behind the nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10-15min;
(4) in beaker, adding concentration is the KOH solution of 15%-25%; Be heated to 70-90 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 3-5min, the sample after cleaning material is put into KOH solution carry out surface corrosion 10-20min, it is 1 * 10 that formation has density 7Cm -2-4 * 10 8Cm -2, the degree of depth is the depression of 450nm-1.5 μ m, accomplishes the surperficial matteization of nitrogen face n-GaN epitaxial loayer, treats that sample cooling back washes with deionized water;
(5) sample after the surperficial matteization is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitute negative electrode;
(6) sample after will annealing is placed on the photoresist spinner; At nitrogen face n-GaN laminar surface spin coating one layer thickness is the organic polymer that 50-80nm, process diameter filter for the 450nm filter; With the 3000-3500rpm revolution; Behind the rotation 50-90s, sample is placed on the hot plate under 120 ℃ toasts 10min again, make the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts;
(7) sample that will accomplish above-mentioned preparation flow is put into Au and the organic polymer layers that thermal evaporation station deposit one layer thickness is 100nm and is formed the anode that Schottky contacts constitutes device, accomplishes the preparation of matte hybrid solar cell.
The present invention compared with prior art has following advantage:
1) the present invention is owing to select for use nitrogen face n-GaN as electron transfer layer, and its electron mobility is than ZnO, TiO 2Higher, the life-span of electronics is longer, and the electronics that negative electrode is collected is more, makes the short circuit current of battery bigger.
2) the present invention is because the suede structure that is covered with depression is adopted on the nitrogen face n-GaN surface that contacts with organic polymer; With respect to smooth contact-making surface in the existing mixing solar cell, this matte makes nitrogen face GaN layer and organic contact area increase on the one hand, and the absorption area of light is increased; Thereby improve the utilance of light; Effectively reduced the interface on the other hand to sun reflection of light, improved the absorption of interface, the efficient of photoexcitation carrier is improved light; The external quantum efficiency of solar cell improves, and the photoelectric conversion efficiency of solar cell also improves thereupon.
3) to use the KOH of high temperature fused state to corrode with respect to gallium face GaN; The nitrogen face GaN that the present invention adopts can realize corrosion in the KOH dilute solution; Etching time and temperature are easy to control, the corrosion area breadth depth ratio is big; The not only easy abundant filling that realizes surperficial suedeization but also help organic polymer improves Solar cell performance.
4) the present invention adopts high conductivity, high transmission rate, and the organic polymer of high work function and nitrogen face n-GaN form the hybrid solar cell of Schottky junction structure, and with low cost with respect to the inorganic solar cell of tradition, technology is simple, and carrier collection efficient is high.
Description of drawings
Fig. 1 is the structure chart of nitrogen surface gallium nitride solar cell of the present invention;
Fig. 2 is a process chart of the present invention.
Embodiment
With reference to Fig. 1, nitrogen surface gallium nitride matte solar battery structure of the present invention comprises: Sapphire Substrate 1, AlN resilient coating 2, epitaxial loayer 3, negative electrode 4, organic polymer 5 and anode 6 from bottom to top.Wherein, AlN resilient coating 2 adopts the growth of MOCVD method, and thickness is 150-200nm; Epitaxial loayer 3 is nitrogen face n-GaN, adopts the growth of MOCVD method, and thickness is that 2-3 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3, and the contact-making surface place of this nitrogen face n-GaN layer and organic polymer layers adopts the suede structure be covered with depression, and the density of its depression is 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is 450nm-1.5 μ m; Negative electrode 4 be on nitrogen face n-GaN layer successively the Al of the Ti of deposit 20nm and 80nm form; Organic polymer 5 is to filter for the 450nm filter through diameter, and the nitrogen face n-GaN surface spin coating after making negative electrode forms, and thickness is 50-80nm; Anode 6 is Au of the 100nm of deposit on organic polymer layers.
With reference to Fig. 2, the method for making battery of the present invention provides following three kinds of embodiment:
Embodiment 1, comprises the steps:
Step 1, on Sapphire Substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 150nm, its process conditions are: temperature is 1050 ℃, NH 3Be 3500sccm, TMAl is 30sccm, and the time is 30min.
Step 2, on the AlN resilient coating, adopting MOCVD method growth thickness is that 2 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer, process conditions are: temperature is 1020 ℃, NH 3Be 5000sccm, TEGa is 220sccm, and the time is 2 hours following carrying out.
Step 3 is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively with the specimen material behind the growth nitrogen face n-GaN epitaxial loayer, repeat 2 times after with deionized water ultrasonic cleaning 10min.
Step 4; Adding concentration is 15% KOH solution in beaker; Be heated to 80 ℃ with the general-purpose heating furnace, with thermocouple thermo detector thermometric and control the general-purpose heating furnace at any time, treat that solution temperature keeps balance 5min after; Sample after cleaning put into 15% KOH solution and carry out surface corrosion 20min, form that to have density be 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is the depression of 450nm-800nm, accomplishes the surperficial matteization of nitrogen face n-GaN epitaxial loayer, treats that sample cooling back washes with deionized water.
Step 5 is put into thermal evaporation station with the sample after the surperficial matteization, and the Al of the Ti of deposit 20nm and 80nm forms good Ohmic contact successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitutes negative electrode.
Step 6; Use diameter to filter as the 450nm filter organic polymer PEDOT:PSS solution, the sample after will annealing again is placed on the photoresist spinner, drops in nitrogen face n-GaN laminar surface with sharp mouth suction pipe uniformly crossing the PEDOT:PSS solution that filters; Till covering whole plane to solution; With the 3300rpm revolution, rotate 70s then, forming thickness is the PEDOT:PSS organic membrane of 50nm; Again sample is placed on the hot plate under 120 ℃ baking 10min to remove organic solvent, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts.
Step 7; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; Deposit one layer thickness is the Au of 100nm and the anode that organic polymer layers forms good Schottky contacts formation device on organic polymer PEDOT:PSS, accomplishes the making of whole matte hybrid solar cell.
Embodiment 2, comprise the steps:
Step 1 is 1050 ℃ in temperature, NH 3Be 3500sccm, TMAl is 30sccm, and the time is under the process conditions of 30min, and adopting MOCVD method growth thickness on Sapphire Substrate is the AlN resilient coating of 150nm.
Step 2 adopts the MOCVD method, is 1020 ℃ in temperature, NH 3Be 5000sccm, TEGa is 220sccm, and the time is that growth thickness is that 2 μ m, electron concentration are 1.0 * 10 on the AlN resilient coating under 2 hours the process conditions 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer.
Step 3 is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively with the sample behind the growth nitrogen face n-GaN epitaxial loayer, repeat 2 times after with deionized water ultrasonic cleaning 15min.
Step 4; The concentration that adding prepares in beaker is 20% KOH solution; Be heated to 85 ℃ with the general-purpose heating furnace, with thermocouple thermo detector thermometric and control the general-purpose heating furnace at any time, treat that solution temperature keeps balance 5min after; It is that 20% KOH solution carries out surface corrosion 15min that the sample after cleaning material is put into above-mentioned concentration, forms that to have density be 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is the depression of 0.6-1.1 μ m, accomplishes the surperficial matteization of nitrogen face n-GaN epitaxial loayer, treats that sample cooling back washes with deionized water.
Step 5 is put into thermal evaporation station with the sample after the surperficial matteization, and the Al of the Ti of deposit 20nm and 80nm forms good Ohmic contact successively on nitrogen face n-GaN layer, then sample is put into annealing furnace, at 600 ℃ of annealing 1min down, constitutes negative electrode.
Step 6; Use diameter to filter as the 450nm filter organic polymer PEDOT:PSS solution, the sample after will annealing again is placed on the photoresist spinner, drips full whole nitrogen face n-GaN surface with sharp mouth suction pipe uniformly crossing the PEDOT:PSS solution that filters; With 3000 revolutions; Forming thickness behind the rotation 60s is the PEDOT:PSS organic membrane of 60nm, sample is placed on the hot plate under 120 ℃ toasts 10min again, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts.
Step 7; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; Deposit one layer thickness is the Au of 100nm and the anode that organic polymer layers forms good Schottky contacts formation device on organic polymer PEDOT:PSS, accomplishes the preparation of matte hybrid solar cell.
Embodiment 3, comprise the steps:
Steps A, adopting MOCVD method growth thickness on Sapphire Substrate is the AlN resilient coating of 200nm, the process conditions of growth are: temperature is 1050 ℃, NH 3Be 3500sccm, TMAl is 30sccm, and the time is 40min.
Step B, adopting MOCVD method growth thickness on the AlN resilient coating is that 3 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer, process conditions are: temperature is 1020 ℃, NH 3Be 5000sccm, TEGa is 220sccm, and the time is 3 hours.
Step C puts into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively with the specimen material behind the growth nitrogen face n-GaN epitaxial loayer, repeat 2 times after with deionized water ultrasonic cleaning 12min.
Step D; The concentration that adding prepares in beaker is 25% KOH solution; Be heated to 90 ℃ with the general-purpose heating furnace, with thermocouple thermo detector thermometric and control the general-purpose heating furnace at any time, treat that solution temperature keeps balance 3min after; It is that 25% KOH solution carries out surface corrosion 20min that the sample after cleaning material is put into above-mentioned concentration, forms that to have density be 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is the depression of 0.9-1.5 μ m, accomplishes the surperficial matteization of nitrogen face n-GaN epitaxial loayer, treats that sample cooling back washes with deionized water.
Step e is put into thermal evaporation station with the sample after the surperficial matteization, and the Al of the Ti of deposit 20nm and 80nm forms good Ohmic contact successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitutes negative electrode.
Step F; Use diameter to filter as the 450nm filter organic polymer PANI solution, the sample after will annealing again is placed on the photoresist spinner, drips full whole nitrogen face n-GaN laminar surface with sharp mouth suction pipe uniformly crossing the PANI solution that filters; Revolution with 2500rpm; Forming thickness behind the rotation 80s is the PANI organic membrane of 80nm, sample is placed on the hot plate under 120 ℃ toasts 10min again, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts.
Step G; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; Deposit one layer thickness is the Au of 100nm and the anode that organic polymer layers forms good Schottky contacts formation device on organic polymer PANI, accomplishes the making of matte hybrid solar cell.

Claims (4)

1. nitrogen surface gallium nitride matte solar cell; Comprise from bottom to top: Sapphire Substrate (1), AlN resilient coating (2), epitaxial loayer (3), negative electrode (4), organic polymer layers (5) and anode (6); It is characterized in that epitaxial loayer (3) adopts nitrogen face n-GaN; And the contact-making surface place of this nitrogen face n-GaN layer and organic polymer layers adopts suede structure, and promptly nitrogen face n-GaN surface is covered with depression, and the density of its depression is 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is 450nm-1.5 μ m.
2. the manufacture method of a nitrogen surface gallium nitride matte hybrid solar cell comprises the steps:
(1) on Sapphire Substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 150-200nm;
(2) on the AlN resilient coating, adopting MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer;
(3) sample that will grow behind the nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10-15min;
(4) in beaker, adding concentration is the KOH solution of 15%-25%; Be heated to 70-90 ℃ with the general-purpose heating furnace; With thermocouple thermo detector thermometric and control the general-purpose heating furnace at any time, treat that solution temperature keeps balance 3-5min after, sample after cleaning is put into KOH solution carries out surface corrosion 10-20min; Make the contact-making surface place of nitrogen face n-GaN layer and organic polymer layers form the suede structure that is covered with depression, the density of this depression is 1 * 10 7Cm -2-4 * 10 8Cm -2, the degree of depth is 450nm-1.5 μ m, treats that sample cooling back washes with deionized water;
(5) sample after the surperficial matteization is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitute negative electrode;
(6) sample after will annealing is placed on the photoresist spinner; At nitrogen face n-GaN laminar surface spin coating one layer thickness is the organic polymer that 50-80nm, process diameter filter for the 450nm filter; With the 2500-3500rpm revolution; Behind the rotation 50-90s, sample is placed on the hot plate under 120 ℃ toasts 10min again, make the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts;
(7) sample that will accomplish above-mentioned preparation flow is put into Au and the organic polymer layers that thermal evaporation station deposit one layer thickness is 100nm and is formed the anode that Schottky contacts constitutes device, accomplishes the making of matte hybrid solar cell.
3. the manufacture method of hybrid solar cell according to claim 2, wherein the described employing of step (1) MOCVD method growth thickness is the AlN resilient coating of 150-200nm, is to be 1050 ℃ in temperature, NH 3Be 3500sccm, TMAl is 30sccm, and the time is to carry out under the process conditions of 30-40min.
4. the manufacture method of hybrid solar cell according to claim 2, wherein the described employing of step (2) MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10 17Cm -3-2.0 * 10 18Cm -3Nitrogen face n-GaN epitaxial loayer, be to be 1020 ℃ in temperature, NH 3Be 5000sccm, TEGa is 220sccm, and the time is to carry out under 2-3 hour the process conditions.
CN201210010844.5A 2012-01-14 2012-01-14 Nitrogen-side gallium nitride napped-side solar battery and production method thereof Expired - Fee Related CN102569655B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109638105A (en) * 2018-12-05 2019-04-16 北京北达智汇微构分析测试中心有限公司 A kind of gallium oxide Hylobitelus xiaoi of PEDOT:PSS transparent electrode

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Publication number Priority date Publication date Assignee Title
JPH05335614A (en) * 1992-06-03 1993-12-17 Idemitsu Kosan Co Ltd Photoelectric conversion element
CN101471424A (en) * 2007-12-26 2009-07-01 中国科学院半导体研究所 Organic inorganic composite solar battery based on polycrystal gallium arsenic film
CN102280591A (en) * 2011-08-08 2011-12-14 华南师范大学 Method for preparing organic-inorganic hybrid solar cell in the air

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335614A (en) * 1992-06-03 1993-12-17 Idemitsu Kosan Co Ltd Photoelectric conversion element
CN101471424A (en) * 2007-12-26 2009-07-01 中国科学院半导体研究所 Organic inorganic composite solar battery based on polycrystal gallium arsenic film
CN102280591A (en) * 2011-08-08 2011-12-14 华南师范大学 Method for preparing organic-inorganic hybrid solar cell in the air

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109638105A (en) * 2018-12-05 2019-04-16 北京北达智汇微构分析测试中心有限公司 A kind of gallium oxide Hylobitelus xiaoi of PEDOT:PSS transparent electrode

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