CN102569287A - Semiconductor light source module and manufacturing method thereof - Google Patents

Abstract

A semiconductor light source module and a method for manufacturing the same are provided. The semiconductor light source module comprises a substrate, a Zener diode and a light emitting diode. The substrate is provided with a groove. The Zener diode is arranged in the groove. The light emitting diode is arranged on the substrate and is electrically connected with the Zener diode. The projection range of the light-emitting diode covers the groove.

Description

Semiconductor light source module and manufacturing method thereof

technical field

The present invention relates to a semiconductor light source module and its manufacturing method, and in particular to a semiconductor light source module combined with light-emitting diodes and Zener diodes and its manufacturing method.

Background technique

With the development of semiconductor technology, various semiconductor light sources are constantly being introduced. For example, a light-emitting diode produces electroluminescence through the combination of electrons and holes within it. The wavelength of the light of the light-emitting diode is related to the type of semiconductor material and the dopant used. Light-emitting diodes have the advantages of high efficiency, long life, not easy to break, high switching speed, high reliability, etc., so that light-emitting diodes have been widely used in various electronic products.

Light-emitting diodes are made into individual grains using semiconductor equipment. In some designs, in order to increase the stability of the light-emitting diode, some passive components are also fabricated through semiconductor equipment, so that the light-emitting diode and the passive component are combined to improve the stability of the light-emitting diode.

Contents of the invention

The invention relates to a semiconductor light source module and a manufacturing method thereof, which utilizes the design of grooves so that passive components such as Zener diodes can be embedded in a substrate without increasing the thickness of the substrate. In addition, in the manufacturing process, the step of embedding the Zener diode can be completed directly by using packaging equipment, without requiring expensive semiconductor equipment, and greatly reducing the manufacturing cost.

According to an aspect of the present invention, a semiconductor light source module is provided. The semiconductor light source module includes a substrate, a Zener diode and a light emitting diode (LED). The substrate has a groove. The zener diode is arranged in the groove. The light emitting diode is arranged on the substrate and is electrically connected with the Zener diode. The projection range of the LEDs covers the groove.

According to another aspect of the present invention, a method for manufacturing a semiconductor light source module is provided. The manufacturing method of the semiconductor light source module includes the following steps. A substrate is provided. The substrate has a groove. A zener diode is arranged in the groove. A light emitting diode is arranged on the substrate. The LED is electrically connected to the Zener diode. The projection range of the LEDs covers the groove.

In order to make the above content of the present invention more obvious and easy to understand, the following specific examples are given in conjunction with the accompanying drawings, and are described in detail as follows:

Description of drawings

FIG. 1 is a schematic diagram of a semiconductor light source module.

2-10 are schematic diagrams of the manufacturing method of the semiconductor light source module of the present embodiment.

FIG. 11 is a schematic diagram of another semiconductor light source module.

FIG. 12 is a schematic diagram of another semiconductor light source module.

FIG. 13 is a schematic diagram of another semiconductor light source module.

FIG. 14 is a schematic diagram of another semiconductor light source module.

FIG. 15 is a schematic diagram of another semiconductor light source module.

FIG. 16 is a schematic diagram of another semiconductor light source module.

FIG. 17 is a schematic diagram of another semiconductor light source module.

FIG. 18 is a schematic diagram of another semiconductor light source module.

Description of main component symbols:

100, 200, 300, 400, 500, 600, 700, 800, 900: semiconductor light source module

110, 210, 310, 410, 510, 610, 710, 810, 910: substrate

110a, 210a, 310a, 410a, 610a, 710a, 810a: first surface

110b, 510b, 610b, 710b, 810b: second surface

111, 311, 411, 511, 611, 711, 811: groove

111a, 511a, 611a: bottom surface

111b, 311b, 411b, 711b, 811b: side walls

111c: opening

112: silicon oxide layer

113: photoresist layer

114: first concave hole

115: Second concave hole

116: First through hole

117: Second through hole

118: The third through hole

119: The fourth through hole

120, 220, 320, 420, 520, 620, 720, 820, 920: Zener diodes

120a, 220a, 420a, 620a, 820a: third surface

120b, 320b, 420b, 520b, 620b, 720b, 820b: fourth surface

130, 230, 330, 430, 530, 630, 730, 830, 930: LED

140, 240, 440, 640, 840: primary filling material

150: Second filling material

160: transparent sealant

170, 370, 470, 570, 670, 770, 870: the first wire

180, 280, 380, 480, 580, 680, 780, 880: Second wire

D111, D114, D115, D120, D150, D170, D180: Thickness

W111: Width

Detailed ways

The following examples are provided for detailed description, and the examples are only used as examples for illustration and will not limit the scope of protection of the present invention. In addition, the drawings in the embodiments omit unnecessary components to clearly show the technical characteristics of the present invention.

Please refer to FIG. 1 , which shows a schematic diagram of a semiconductor light source module 100 . The semiconductor light source module 100 includes a substrate 110 , a Zener diode (zener diode) 120 and a light emitting diode (light emitting diode, LED) 130 . The substrate 110 is used for carrying components and laying circuits, such as a silicon substrate or a laminated substrate. The Zener diode 120 has a circuit voltage stabilizing function, can adjust the operating voltage and serve as an electrostatic discharge (ESD) protection circuit. The light-emitting diode 130 is used to emit light, and its material is, for example, aluminum gallium arsenide (AlGaAs), aluminum gallium phosphide (AlGaP), aluminum indium gallium phosphide (AlGaInP), gallium arsenide phosphide (GaAsP), gallium phosphide (GaP ), gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum gallium nitride (AlGaN).

As shown in FIG. 1 , the substrate 110 has a groove 111 . The Zener diode 120 is disposed in the groove 111 . The LED 130 is disposed on the substrate 110 and is electrically connected to the Zener diode 120 . The projection range of the LED 130 covers the groove 111 . The Zener diode 120 can be disposed in the substrate 110 only by using packaging equipment such as die placement, glue sealing, and reflow soldering, without using complex and expensive semiconductor equipment. The process of using packaging equipment not only has the advantages of low cost, but also has the advantages of high yield and fast speed.

As far as the design of the groove 111 is concerned, the groove 111 can be a flat-bottomed cone-shaped structure, a pointed-bottomed cone-shaped structure or a columnar structure. In this embodiment, the groove 111 is a flat-bottomed cone-shaped structure. That is to say, the groove 111 has a bottom surface 111a and a side wall 111b, the bottom surface 111a is substantially flat, the side wall 111b is substantially inclined to the bottom surface 111a, and the width W111 of the groove 111 gradually increases from the bottom surface 111a to the opening 111c .

In addition, the depth D111 of the groove 111 is greater than the thickness D120 of the Zener diode 120 , so that the Zener diode 120 can be completely accommodated in the groove 111 . In this way, the Zener diode 120 can be embedded in the substrate 110 without increasing the volume of the semiconductor light source module 100 .

In addition, the semiconductor light source module 100 further includes a first filling material 140 , a second filling material 150 , a transparent sealant 160 , a first wire 170 and a second wire 180 . The materials of the first filling material 140 , the second filling material 150 and the transparent sealant 160 may be epoxy resin, polyurethane, silicone, acrylic resin or polyester. The materials of the first filling material 140 , the second filling material 150 and the transparent sealant 160 may be the same, two of them may be the same, or all three of them may be different. Designers can make choices based on technological requirements.

The first filling material 140 is filled in the groove 111 and covers the Zener diode 120 to protect the Zener diode 120 from moisture or particles. In this embodiment, the first filling material 140 completely fills the groove 111 .

The second filling material 150 is disposed on the first filling material 140 to fill the gap between the first filling material 140 and the LED 130 so that the LED 130 can be well supported.

The transparent sealant 160 covers the LED 130 to protect the LED 130 from moisture or particle pollution. The transparent sealant 160 is transparent, so that light from the LED 130 can pass through the transparent sealant 160 . The surface of the transparent encapsulant 160 is arc-shaped, so that the refracted light can be emitted in a larger angle range.

As far as the arrangement of the light emitting diode 130 is concerned, the light emitting diode 130 can be connected to the substrate 110 by flip chip bonding or wire bond. In this embodiment, the LED 130 is connected to the substrate 110 in a flip-chip bonding manner.

The substrate 110 has a first surface 110a and a second surface 110b opposite to each other. The opening 111c of the groove 111 is located on the first surface 110a. The Zener diode 120 has a third surface 120a and a fourth surface 120b opposite to each other. The third surface 120 a is adjacent to the opening 111 c of the groove 111 . The fourth surface 120b is adjacent to the bottom surface 111a of the groove 111 .

Regarding the first wire 170 and the second wire 180 , the first wire 170 and the second wire 180 are used to electrically connect the Zener diode 120 and the LED 130 . The first wire 170 and the second wire 180 can extend from the same surface of the Zener diode 120 , or extend from different surfaces of the Zener diode 120 . The paths of the first wire 170 and the second wire 180 are not limited to one method. In this embodiment, both the first wire 170 and the second wire 180 are connected to the LED 130 from the fourth surface 120b.

As shown in FIG. 1 , the first wire 170 extends from the fourth surface 120b of the Zener diode 120, passes through the bottom surface 111a of the groove 111 and the second surface 110b, and then lays along the second surface 110b and penetrates the second surface 110b. After connecting with the first surface 110a, the light emitting diode 130 is electrically connected. Similarly, the second wire 180 extends from the fourth surface 120b of the Zener diode 120, passes through the bottom surface 111a of the groove 111 and the second surface 110b, is laid along the second surface 110b, and penetrates the second surface 110b and the first surface 110b. The surface 110a is electrically connected to the LED 130 .

Part of the first wire 170 and part of the second wire 180 on the first surface 110a have certain thicknesses D170, D180, so the light emitting diode 130 is not flat against the first surface 110a. When the thickness D150 of the second encapsulation material 150 is substantially equal to the thicknesses D170 and D180 of the first lead 170 and the second lead 180 on the first surface 110a, the second encapsulation material 150 substantially fills the space between the LED 130 and the first surface 110a. There is a space between them, so as to give enough supporting force to the light emitting diode 130 .

Regarding the manufacturing method of the semiconductor light source module 100 , please refer to FIGS. 2 to 10 , which are schematic diagrams of the manufacturing method of the semiconductor light source module 100 in this embodiment. First, as shown in FIG. 2 , a substrate 110 is provided. The material of the substrate 110 is silicon, for example. The substrate 110 is subjected to a high temperature furnace tube process, so that the substrate 110 is covered by the silicon oxide layer 112 .

Next, as shown in FIG. 3 , a photoresist layer 113 is formed. After the photoresist layer 113 is exposed and developed, the silicon oxide layer 112 is etched using the patterned photoresist layer 113 as a mask.

Then, as shown in FIGS. 3-4 , the photoresist layer 113 is removed, and the first surface 110a of the substrate 110 is etched using the patterned silicon oxide layer 112 as a mask. In this step, the substrate 110 is etched with a groove 111 , a first concave hole 114 and a second concave hole 115 . The depths D111 , D114 and D115 of the groove 111 , the first concave hole 114 and the second concave hole 115 are substantially the same. At this time, the first concave hole 114 and the second concave hole 115 do not pass through.

Next, as shown in FIGS. 4-5, a first through hole 116 and a second through hole 117 are etched from the second surface 110b of the substrate 110 corresponding to the first concave hole 114 and the second concave hole 115, and the A third through hole 118 and a fourth through hole 119 are etched on the second surface 110 b of the substrate 110 corresponding to the groove 111 .

Then, as shown in FIG. 6 , the substrate 110 is subjected to the high temperature furnace tube process again, so that the walls of the first through hole 116 , the second through hole 117 , the third through hole 118 and the fourth through hole 119 are coated with the silicon oxide layer 112 . covered by.

Next, as shown in FIG. 7, an electroplating process is performed on the third through hole 118, part of the second surface 110b, and the first through hole 116 to form a first wire 170; and on the fourth through hole 119, part of the An electroplating process is performed on the second surface 110b and the second through hole 117 to form the second wire 180 .

Then, as shown in FIG. 8 , the Zener diode 120 is disposed in the groove 111 , and the first filling material 140 is filled in the groove 111 to cover the Zener diode 120 .

Next, as shown in FIG. 9 , fill the second filling material 150 on the first filling material 140, and arrange the light emitting diode 130 on the substrate 110, so that the second filling material 150 is disposed on the first filling material 140 and the light emitting diode 130 between.

Then, as shown in FIG. 10 , a transparent sealant 160 is disposed on the LED 130 . So far, the Zener diode 120 is successfully embedded in the substrate 110 , and the Zener diode 120 and the LED 130 are also electrically connected and packaged. Through the manufacturing method of this embodiment, the Zener diode 120 can be embedded in the equipment of the packaging process, and can be completed without expensive semiconductor equipment.

In addition, please refer to FIG. 11 , which shows a schematic diagram of another semiconductor light source module 200 . In one embodiment, the second wire 280 of the semiconductor light source module 200 may extend from the third surface 220a of the Zener diode 220, and extend substantially vertically to the surface of the first filling material 240 and then lay on the part of the substrate 210. The first surface 210 a is electrically connected to the light emitting diode 230 .

Furthermore, please refer to FIG. 12 , which shows a schematic diagram of another semiconductor light source module 300 . In one embodiment, the first wire 370 and the second wire 380 of the semiconductor light source module 300 can extend from the fourth surface 320b of the Zener diode 320, and lay on the side wall 311b of the groove 311 and part of the first wire. The surface 310 a is electrically connected to the LED 330 .

In addition, please refer to FIG. 13 , which shows a schematic diagram of another semiconductor light source module 400 . In one embodiment, the first wire 470 of the semiconductor light source module 400 may extend from the fourth surface 420b of the Zener diode 420, and lay on the sidewall 411b of the groove 411 and a part of the first surface 410a of the substrate 410, The light emitting diode 430 is electrically connected. The second wire 480 of the semiconductor light source module 400 can extend from the third surface 420a of the zener diode 420, and extend substantially vertically to the surface of the first filling material 440, and then lay on a part of the first surface 410a for electrical performance. Light emitting diode 130 is connected.

Furthermore, please refer to FIG. 14 , which shows a schematic diagram of another semiconductor light source module 500 . In one embodiment, the substrate 510 of the semiconductor light source module 500 can be set upside down. The first wire 570 and the second wire 580 can extend from the fourth surface 520b of the Zener diode 520, and after passing through the bottom surface 510a of the groove 511 and the second surface 510b of the substrate 510, they are laid along the second surface 510b to provide electrical properties. Connect LED 530 .

Furthermore, please refer to FIG. 15 , which shows a schematic diagram of another semiconductor light source module 600 . In an embodiment, the substrate 610 of the semiconductor light source module 600 can be set upside down. The first wire 670 extends from the fourth surface 620b of the Zener diode 620 , passes through the bottom surface 611a of the groove 611 and the second surface 610b of the substrate 610 and is laid along the second surface 610b to electrically connect the LED 630 . The second wire 680 may extend from the third surface 620a of the zener diode 620, and extend substantially vertically to the surface of the first filling material 640, and after being laid along a part of the first surface 610a of the substrate 610, penetrate the first surface. 610 a and the second surface 610 b are electrically connected to the light emitting diode 630 .

Furthermore, please refer to FIG. 16 , which shows a schematic diagram of another semiconductor light source module 700 . In one embodiment, the substrate 710 of the semiconductor light source module 700 can be set upside down. The first wire 770 and the second wire 780 may extend from the fourth surface 720b of the zener diode 720, and lay behind the side wall 711b of the groove 711 and a part of the first surface 710a of the substrate 710, and pass through the first surface 710a. and the second surface 710b to be electrically connected to the light emitting diode 730 .

In addition, please refer to FIG. 17 , which shows a schematic diagram of another semiconductor light source module 800 . In one embodiment, the substrate 810 of the semiconductor light source module 800 can be set upside down. The first wire 870 may extend from the fourth surface 820b of the Zener diode 820, and lay on the sidewall 811b of the groove 811 and a part of the first surface 810a of the substrate 810, and then penetrate the first surface 810a and the second surface 810b. , to electrically connect the LED 830 . The second wire 880 can extend from the third surface 820a of the zener diode 820, and extend substantially vertically to the surface of the first filling material 840, and then lay on a part of the first surface 810a of the substrate 810, and penetrate the first surface. 810 a and the second surface 810 b are electrically connected to the light emitting diode 830 .

In addition, please refer to FIG. 18 , which shows a schematic diagram of another semiconductor light source module 900 . In one embodiment, the LED 930 of the semiconductor light source module 900 may be connected to the substrate 910 by wire bonding.

Through the design of the above embodiments, the Zener diodes 120-920 can be embedded in the substrates 110-920 without increasing the thickness of the substrates 110-910. In addition, in the manufacturing process, the steps of embedding the Zener diodes 120-920 can be completed directly by using packaging equipment, without requiring expensive semiconductor equipment, and greatly reducing the manufacturing cost.

To sum up, although the present invention has been disclosed by the above embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims.

Claims (17)

1. optical semiconductor source module comprises:

One substrate has a groove;

One Zener diode is arranged in this groove; And

One light-emitting diode is arranged on this substrate, and electrically connects this Zener diode, and this groove is contained in the drop shadow spread of this light-emitting diode.

2. optical semiconductor source module as claimed in claim 1, wherein the degree of depth of this groove is greater than the thickness of this Zener diode.

3. optical semiconductor source module as claimed in claim 1 more comprises:

One first packing material is filled in this groove, and covers this Zener diode.

4. optical semiconductor source module as claimed in claim 3 more comprises:

One second packing material is arranged between this first packing material and this light-emitting diode.

5. optical semiconductor source module as claimed in claim 4, wherein the material of this first packing material is identical with the material of this second packing material.

6. optical semiconductor source module as claimed in claim 4, wherein the material of this first packing material is different with the material of this second packing material.

7. optical semiconductor source module as claimed in claim 1, wherein this light-emitting diode is connected with this substrate with the mode of chip bonding.

8. optical semiconductor source module as claimed in claim 1, wherein this light-emitting diode is connected with this substrate with the mode that routing engages.

9. optical semiconductor source module as claimed in claim 1, wherein this substrate has a first surface and a second surface, and the opening of this groove is positioned at this first surface, and this light-emitting diode is arranged at this first surface.

10. optical semiconductor source module as claimed in claim 1, wherein this substrate has a first surface and a second surface, and the opening of this groove is positioned at this first surface, and this light-emitting diode is arranged at this second surface.

11. optical semiconductor source module as claimed in claim 1; Wherein this Zener diode has one the 3rd relative surface and one the 4th surface; The 3rd surface is adjacent to the opening of this groove, and the 4th surface is adjacent to the bottom surface of this groove, and this optical semiconductor source module more comprises:

One first lead, the 4th surface is connected to this light-emitting diode certainly, to electrically connect this Zener diode and this light-emitting diode; And

One second lead, the 4th surface or the 3rd surface are connected to this light-emitting diode certainly, to electrically connect this Zener diode and this light-emitting diode.

12. optical semiconductor source module as claimed in claim 11; Wherein this first lead of part runs through bottom surface and this second surface of this groove; This first lead partly is layed in this second surface, and this first lead partly runs through this first surface and this second surface.

13. optical semiconductor source module as claimed in claim 11, wherein this first lead of part is layed in the sidewall of this groove, and this first lead partly is layed in this first surface.

14. optical semiconductor source module as claimed in claim 1, wherein this groove is a flat cone structure, a sharp base cone shape structure or a column structure.

15. the manufacturing approach of an optical semiconductor source module comprises:

One substrate is provided, and this substrate has a groove;

One Zener diode is set in this groove; And

One light-emitting diode is set on this substrate, this light-emitting diode electrically connects this Zener diode, and this groove is contained in the drop shadow spread of this light-emitting diode.

16. the manufacturing approach of optical semiconductor source module as claimed in claim 15 more comprises:

Fill one first packing material in this groove, and cover this Zener diode.

17. the manufacturing approach of optical semiconductor source module as claimed in claim 16 more comprises:

Fill one second packing material on this first packing material, so that this second packing material is arranged between this first packing material and this light-emitting diode.

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