CN102569191A - 半穿半反液晶显示器的阵列基板制造方法 - Google Patents
半穿半反液晶显示器的阵列基板制造方法 Download PDFInfo
- Publication number
- CN102569191A CN102569191A CN2012100567910A CN201210056791A CN102569191A CN 102569191 A CN102569191 A CN 102569191A CN 2012100567910 A CN2012100567910 A CN 2012100567910A CN 201210056791 A CN201210056791 A CN 201210056791A CN 102569191 A CN102569191 A CN 102569191A
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- pixel electrode
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- liquid crystal
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100567910A CN102569191B (zh) | 2012-03-06 | 2012-03-06 | 半穿半反液晶显示器的阵列基板制造方法 |
PCT/CN2012/072166 WO2013131284A1 (zh) | 2012-03-06 | 2012-03-11 | 半穿半反液晶显示器的阵列基板制造方法 |
US13/509,996 US8673663B2 (en) | 2012-03-06 | 2012-03-11 | Method for manufacturing array substrate of transflective liquid crystal display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100567910A CN102569191B (zh) | 2012-03-06 | 2012-03-06 | 半穿半反液晶显示器的阵列基板制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569191A true CN102569191A (zh) | 2012-07-11 |
CN102569191B CN102569191B (zh) | 2013-09-04 |
Family
ID=46414262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012100567910A Expired - Fee Related CN102569191B (zh) | 2012-03-06 | 2012-03-06 | 半穿半反液晶显示器的阵列基板制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102569191B (zh) |
WO (1) | WO2013131284A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738080A (zh) * | 2012-07-20 | 2012-10-17 | 深圳市华星光电技术有限公司 | 具有嵌入式光伏电池的阵列基板的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100134397A1 (en) * | 2008-11-28 | 2010-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2010164874A (ja) * | 2009-01-19 | 2010-07-29 | Fujitsu Ltd | 電子署名方法、電子署名プログラムおよび電子署名装置 |
CN101957526A (zh) * | 2009-07-13 | 2011-01-26 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100792300B1 (ko) * | 2005-11-11 | 2008-01-07 | 비오이 하이디스 테크놀로지 주식회사 | 반투과형 액정표시장치의 어레이기판 제조방법 |
CN101621039B (zh) * | 2008-07-01 | 2011-02-09 | 中华映管股份有限公司 | 像素结构的制作方法以及像素结构 |
CN101661199B (zh) * | 2008-08-27 | 2011-12-28 | 北京京东方光电科技有限公司 | 半透过式液晶显示装置的阵列基板制造方法 |
CN101807550B (zh) * | 2009-02-18 | 2013-05-22 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
CN101840892B (zh) * | 2010-04-16 | 2012-04-18 | 华映视讯(吴江)有限公司 | 反射式液晶显示面板的薄膜晶体管基板及其制作方法 |
CN102148195B (zh) * | 2010-04-26 | 2013-05-01 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
-
2012
- 2012-03-06 CN CN2012100567910A patent/CN102569191B/zh not_active Expired - Fee Related
- 2012-03-11 WO PCT/CN2012/072166 patent/WO2013131284A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100134397A1 (en) * | 2008-11-28 | 2010-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2010164874A (ja) * | 2009-01-19 | 2010-07-29 | Fujitsu Ltd | 電子署名方法、電子署名プログラムおよび電子署名装置 |
CN101957526A (zh) * | 2009-07-13 | 2011-01-26 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738080A (zh) * | 2012-07-20 | 2012-10-17 | 深圳市华星光电技术有限公司 | 具有嵌入式光伏电池的阵列基板的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013131284A1 (zh) | 2013-09-12 |
CN102569191B (zh) | 2013-09-04 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Manufacturing method of array substrate of semi-penetration and semi-reflection liquid crystal display Effective date of registration: 20190426 Granted publication date: 20130904 Pledgee: Bank of Beijing Limited by Share Ltd Shenzhen branch Pledgor: Shenzhen Huaxing Optoelectronic Technology Co., Ltd. Registration number: 2019440020032 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201016 Granted publication date: 20130904 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: Shenzhen China Star Optoelectronics Technology Co.,Ltd. Registration number: 2019440020032 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130904 Termination date: 20210306 |
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CF01 | Termination of patent right due to non-payment of annual fee |