CN102569044B - 二极管sf芯片的制造方法 - Google Patents
二极管sf芯片的制造方法 Download PDFInfo
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- CN102569044B CN102569044B CN201110440409.1A CN201110440409A CN102569044B CN 102569044 B CN102569044 B CN 102569044B CN 201110440409 A CN201110440409 A CN 201110440409A CN 102569044 B CN102569044 B CN 102569044B
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- silicon chip
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000009792 diffusion process Methods 0.000 claims abstract description 51
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001962 electrophoresis Methods 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 239000011574 phosphorus Substances 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 239000012459 cleaning agent Substances 0.000 claims abstract description 5
- 239000004576 sand Substances 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 27
- 238000006396 nitration reaction Methods 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000428 dust Substances 0.000 claims description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 claims description 2
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000007771 core particle Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000003892 spreading Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011084 recovery Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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Abstract
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Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110440409.1A CN102569044B (zh) | 2011-12-24 | 2011-12-24 | 二极管sf芯片的制造方法 |
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CN201110440409.1A CN102569044B (zh) | 2011-12-24 | 2011-12-24 | 二极管sf芯片的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102569044A CN102569044A (zh) | 2012-07-11 |
CN102569044B true CN102569044B (zh) | 2014-07-30 |
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CN201110440409.1A Active CN102569044B (zh) | 2011-12-24 | 2011-12-24 | 二极管sf芯片的制造方法 |
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CN (1) | CN102569044B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102983078B (zh) * | 2012-12-11 | 2015-07-22 | 鞍山市华辰电力器件有限公司 | 一种整流二极管的制作方法 |
CN104201102B (zh) * | 2014-08-28 | 2017-12-12 | 苏州启澜功率电子有限公司 | 一种快恢复二极管frd芯片及其制作工艺 |
CN109309000A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种gpp芯片镀金方法 |
CN109755117B (zh) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作frgpp芯片的方法 |
CN109755113B (zh) * | 2017-11-01 | 2021-08-10 | 天津环鑫科技发展有限公司 | 一种调节扩散气氛的一次扩散工艺 |
CN112309855A (zh) * | 2019-07-26 | 2021-02-02 | 株洲中车时代半导体有限公司 | 一种快恢复二极管的制造方法 |
CN113223953B (zh) * | 2021-03-31 | 2022-09-27 | 青岛惠科微电子有限公司 | 一种快恢复芯片的制造方法、制造设备和快恢复芯片 |
CN114724936A (zh) * | 2022-03-30 | 2022-07-08 | 青岛惠科微电子有限公司 | 半导体器件的制备方法及半导体器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907181A (en) * | 1995-06-09 | 1999-05-25 | Samsung Electronics Co., Ltd. | Tapered dielectric microelectronic structures and associated methods |
CN101593693A (zh) * | 2009-06-19 | 2009-12-02 | 常州银河电器有限公司 | 制作高压双向触发二极管的方法 |
CN102087976A (zh) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | 一种快恢复二极管frd芯片及其生产工艺 |
CN102169833A (zh) * | 2011-03-17 | 2011-08-31 | 苏州固锝电子股份有限公司 | 一种低功耗二极管制造工艺 |
-
2011
- 2011-12-24 CN CN201110440409.1A patent/CN102569044B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907181A (en) * | 1995-06-09 | 1999-05-25 | Samsung Electronics Co., Ltd. | Tapered dielectric microelectronic structures and associated methods |
CN101593693A (zh) * | 2009-06-19 | 2009-12-02 | 常州银河电器有限公司 | 制作高压双向触发二极管的方法 |
CN102087976A (zh) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | 一种快恢复二极管frd芯片及其生产工艺 |
CN102169833A (zh) * | 2011-03-17 | 2011-08-31 | 苏州固锝电子股份有限公司 | 一种低功耗二极管制造工艺 |
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Effective date of registration: 20161223 Address after: 213000 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee after: Changzhou Star Sea Electronics Co., Ltd. Address before: 213022 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee before: Changzhou Star Sea Electronics Co., Ltd. Patentee before: Changzhou Star Sea Technolgy Co.,Ltd. |
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Address after: 213022 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee after: Changzhou Xinghai Electronic Limited by Share Ltd Address before: 213000 Changzhou, Jiangsu new North District, Tianmu Lake Road, No. 1 Patentee before: Changzhou Star Sea Electronics Co., Ltd. |