CN102565143B - On-line testing structure for polycrystalline silicon material residual stress - Google Patents

On-line testing structure for polycrystalline silicon material residual stress Download PDF

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CN102565143B
CN102565143B CN201210003497.3A CN201210003497A CN102565143B CN 102565143 B CN102565143 B CN 102565143B CN 201210003497 A CN201210003497 A CN 201210003497A CN 102565143 B CN102565143 B CN 102565143B
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pointer
polysilicon
deflection
pointers
polycrystalline silicon
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CN102565143A (en
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李伟华
张卫青
蒋明霞
周再发
刘海韵
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Southeast University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/0047—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes measuring forces due to residual stresses

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Abstract

The invention discloses an on-line testing structure for polycrystalline silicon material residual stress, which includes three polycrystalline silicon deflecting pointers with identical basic structures, wherein the three polycrystalline silicon deflecting pointers are arranged in a triangular way with the pointers pointed to the center, and the initial deflection directions of the pointers under the residual stress action are controlled so as to enable the interval retaining and interval variation to effectively reflect the size and quality of the residual stress; the manufacturing technology of the testing structure is simple without any special machining requirements; and thermal drive is adopted during the testing, and the testing parameters are the resistances of the drive beam before and after the thermal driving. Even though the thermal expansion principle is adopted during the use, the measuring instrument doesn't need the coefficient of thermal expansion, so that the measurement result is free from the error caused by on-line testing the coefficient of thermal expansion. The invention has the advantages that the testing structure is simple, the electric signal loading and measuring are convenient, and the calculating method is stable.

Description

Polycrystalline silicon material unrelieved stress in situ rest structure
Technical field
The present invention relates to a kind of polycrystalline silicon material unrelieved stress in situ rest structure, belong to MEMS (micro electro mechanical system) (MEMS) material parameter on-line testing technical field.
Background technology
Performance and the material parameter of micro electro mechanical device have close relationship, impact due to process, some material parameters will change, and the uncertain factor that these are caused by processing technology will make device design and performance prediction occur uncertain and unsettled situation.Material parameter on-line testing object is just to measure in real time the micro electro mechanical device material parameter of being manufactured by concrete technology, the stability of technique is monitored, and by parameter feedback to deviser to design revise.Therefore the on-line testing of, not leaving processing environment and adopting common apparatus to carry out becomes the necessary means of process monitoring.In situ rest structure adopts the method for electrical stimuli and electrical measurement conventionally, by electrical quantities numerical value and targetedly computing method obtain the physical parameter of material.
Polysilicon is the important and basic material of manufacturing micro electro mechanical device structure, conventionally adopts the manufacture of chemical vapor deposition (CVD) method to obtain.Polycrystalline silicon material will produce internal stress and have unrelieved stress in manufacturing process.Unrelieved stress is divided into compressive stress and tension stress.After micro electromechanical structure is released, unrelieved stress, by causing structure to occur initial deformation or producing the impact on other materials parameter, produces actual performance departing from design performance.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of in situ rest structure of polycrystalline silicon material unrelieved stress.
Technical scheme: for achieving the above object, a kind of polycrystalline silicon material unrelieved stress in situ rest structure of the present invention, comprises three polysilicon deflection pointers, three polysilicon deflection pointers comprise that respectively polysilicon drives beam, polysilicon pointer He Mao district; Three polysilicon deflection pointers are " product " font to be placed, and polysilicon pointer all points to center; Lower left quarter polysilicon deflection pointer is identical with right lower quadrant polysilicon deflection pointer structure, with the vertical center line of test structure left and right mirror to, top polysilicon deflection pointer is positioned at center, pointer direction is contrary with the left and right polysilicon deflection pointer of bottom; Whole test structure be produced on dielectric substrate Shang，Chu Mao district and on metal electrode outside, after structure is released, drive beam and pointer all in suspended state, so that discharge unrelieved stress free-extension and deflection.
Three of left, center, right pointer tip spacing is subject to the effect of polysilicon unrelieved stress different, and a left side-pointer tip spacing is not subject to the impact of polysilicon unrelieved stress, in-right pointer tip spacing changes with size and the character of polysilicon unrelieved stress.
In described lower left quarter polysilicon deflection pointer, drive in Mao district, beam one end and Mao district, pointer one end and be manufactured with respectively metal electrode; In described right lower quadrant polysilicon deflection pointer, drive in Mao district, beam one end and Mao district, pointer one end and be manufactured with respectively metal electrode; In described top polysilicon deflection pointer, only in Mao district, pointer one end, be manufactured with metal electrode.
The polysilicon of described three polysilicon deflection pointers drives beam length to equate.
Beneficial effect: polycrystalline silicon material unrelieved stress in situ rest structure of the present invention, by three identical polysilicon deflection pointers of basic structure being to " product " font, arrange, and utilize the suffered polysilicon unrelieved stress of these pointers to affect identical feature, size and the character of unrelieved stress can be measured effectively, method of testing is to utilize the driving beam of current flow heats deflection pointer to make its expansion, and and then push pointer deflection, measure the impact of unrelieved stress on amount of deflection.Adopt the present invention to test polysilicon unrelieved stress, method is simple, testing apparatus requirement is low, and process is synchronizeed with micro electro mechanical device, there is no special processing request, meets the requirement of on-line testing completely.Computing method in the present invention only limit to simple mathematical formula, although employing expansion principle, but measure to calculate and do not need thermal expansivity, the impact of error while having avoided on-line testing thermal expansivity on measurement result, has that test structure is simple, electric signal loads and measure the advantages such as easy, computing method are stable.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of polycrystalline silicon material unrelieved stress in situ rest structure of the present invention;
Fig. 2 is the A-A sectional view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
As depicted in figs. 1 and 2, polycrystalline silicon material unrelieved stress in situ rest structure of the present invention, comprise three deflection pointers that basic structure is identical, each deflection pointer comprises that 101,103,105, pointers 102,104,106 and two vertical with driving beam 101,103,105 of driving beam of a level are fixed on formation ，Liang Gemao district, substrate Shang Mao district and have fixed respectively driving one end of beam 101,103,105 and one end of pointer 102,104,106.The main body of test structure is formed by polycrystalline silicon material manufacture.
Three polysilicon deflection pointers are " product " font to be placed, and pointer 102,104,106 all points to center; The polysilicon deflection pointer on top comprises driving beam 101, the metal electrode 118 on pointer 102，Mao district 107,108 and anchor district 108; The polysilicon deflection pointer of lower left quarter comprises driving beam 103, the metal electrode 113,114 in pointer 104，Mao district 109,110 and anchor district; The polysilicon deflection pointer of right lower quadrant comprises driving beam 105, the metal electrode 115,116 in pointer 106，Mao district 111,112 and anchor district.The polysilicon deflection pointer of lower left quarter and right lower quadrant is identical, and with the symmetrical placement of center line of pointer 102, the center line of pointer 102 is vertical center lines of whole test structure.Whole test structure is produced in dielectric substrate 117, Chu Mao district and on metal electrode outside, after structure is released, drive beam 101,103,105 and pointer 102,104,106 all in suspended state, so that these parts discharge unrelieved stress retractable and deflection.
Drive the length of beam 101,103,105 to be L 2, after structure discharges this beam will because of unrelieved stress occur initial flexible and and then push pointer 102,104 and 106 around its turning axle deflection because basic structure is identical, the deflection angle therefore producing because of unrelieved stress is identical.To respective anchors district, 108,110,111 distance is L to the center line that drives beam 101,103,105 vertical direction 5.
Pointer 104,106 length are L 1; Pointer 102 length equal L 1+ L 4, L 4for pointer 102 and pointer 104,106 overlap length in the vertical direction, much smaller than L 1.The head of pointer 102 is the rectangle that a width is larger, and the object that width increases is in order to keep a larger distance between Shi Mao district 110 and 111, to facilitate the use of test probe.
Pointer 102 and 104 design pitch are g 1, pointer 102 and 106 design pitch are g 2.
In Mao district 108,109,110,111 and 112, made respectively metal electrode 118,113,114,115 and 116, wherein, metal electrode 114 extends to always and drives on beam 103, metal electrode 115 extends to always and drives on beam 105, while making heat driven work, effectively heating region length is L 2-L 3.
Polycrystalline silicon material unrelieved stress in situ rest structure of the present invention, principle is as follows:
Because the existing unrelieved stress of polysilicon will make to drive beam 101,103 to produce initial length after structure discharges, change, and then make pointer 102,104 that initial deflection occur.But because under same nature and big or small unrelieved stress effect, deflection and deflection angle numerical value that pointer 102 and 104 produces the contrary direction that pivots are identical, so the spacing of pointer end can remain unchanged, and is still g 1.Similarly, unrelieved stress will make to drive beam 105 after structure discharges, to produce initial length variation, and then make pointer 106 that initial deflections occur, and yawing moment is contrary with pointer 104.Because the direction that pivots of pointer 102 and pointer 106 is identical, result makes actual pitch because of unrelieved stress off-design value g 2if unrelieved stress is compressive stress, actual pitch is less than g 2if unrelieved stress is tension stress, actual pitch is greater than g 2.
The present invention adopts heat to drive deflection pointer rotary work mode.Between metal electrode 113 and metal electrode 114, apply electric current, make to drive L in beam 103 2-L 3there is thermal expansion in part, the clockwise deflection of push pointer 104, while coming in contact with pointer 102 when the tip of pointer 104, the pointer 104 clockwise deflections in tip apart from g 1.Between metal electrode 115 and metal electrode 116, apply electric current, make to drive L in beam 105 2-L 3there is thermal expansion in part, deflection that push pointer 106 is counterclockwise suppose that the actual range of the pointer 106 counterclockwise deflections in tip is g when the tip of pointer 106 and pointer 102 come in contact.Obviously, because the effect of unrelieved stress, the distance g of 106 most advanced and sophisticated deflections will be not equal to g 2.If there is g, equal g 2situation, mean that unrelieved stress is 0.
Test structure of the present invention adopts basic micro-electromechanical processing technology to complete, and the manufacturing process of test structure is described with typical two-layer polysilicon microcomputer electric surface processing technology below.
Select N-type semiconductor silicon chip, the silicon dioxide layer of heat growth 100 nano thickness, deposit the silicon nitride of one deck 500 nano thickness, formation dielectric substrate 117 by low-pressure chemical vapor deposition process.Adopt the polysilicon of low-pressure chemical vapor deposition process deposition one deck 300 nanometers and carry out N-type heavy doping to make this layer of polysilicon become conductor, by photoetching process etching, form the part in anchor district.Use low-pressure chemical vapor deposition process deposits the phosphorosilicate glass (PSG) of 2000 nano thickness, forms the figure in anchor district by photoetching process.The polysilicon that utilizes low-pressure chemical vapor deposition process deposit one deck 2000 nano thickness, carries out N-type heavy doping to polysilicon, the thickness sum that the thickness in photoetching process formation polycrystalline silicon material unrelieved stress in situ rest structure figure ，Mao district is twice polysilicon.Adopt in stripping technology Mao district and form metal electrode figure.Finally by corrosion phosphorosilicate glass releasing structure.
Whether method of testing of the present invention is simple, adopts simple variable current source as driving source, adopt common two pointers of multimeter monitoring to come in contact, and adopts ohmmeter measuring resistance, and detailed process is as follows:
1), test process
Test process divides several stages to carry out:
1. at room temperature measure the resistance between metal electrode 113 and metal electrode 114 (or metal electrode 115, metal electrode 116), be designated as R ∞;
2. between metal electrode 113 and metal electrode 114, apply the electric current of slow increase, and monitor the resistance between metal electrode 118 and metal electrode 114, when this resistance is when infinity becomes finite value, show that pointer 104 has occurred to contact with pointer 102, stops the increase of heating current;
Resistance when 3. measuring pointer 102 and pointer 104 and coming in contact between metal electrode 113 and metal electrode 114, is designated as R tL, close the electric current between metal electrode 113 and metal electrode 114, make pointer 104 revolutions depart from pointer 102;
4. between metal electrode 115 and metal electrode 116, apply the electric current of slow increase, and monitor the resistance between metal electrode 108 and metal electrode 115, when this resistance is when infinity becomes finite value, show that pointer 106 has occurred to contact with pointer 102, stops the increase of heating current;
Resistance when 5. measuring pointer 106 and pointer 102 and coming in contact between metal electrode 115 and metal electrode 116, is designated as R tR, close the electric current between metal electrode 113 and metal electrode 114, make pointer 106 revolutions depart from pointer 102;
2), calculate the thermal expansivity of polycrystalline silicon material
It is L that polysilicon drives length on beam 103 2-L 3the resistance R of part tLwith medial temperature variation delta T on it lpass be:
R TL = R ∞ ( 1 + a 1 Δ T L + a 2 Δ T L 2 )
A in formula 1, a 2for the temperature coefficient of polysilicon resistance, medial temperature variation delta T lwhile coming in contact for pointer 102 and 104, heat drives L on beam 103 2-L 3the medial temperature of part and room temperature poor.
By elementary heat expansion relation, heat drives the length variations Δ L of beam 103 l=(L 2-L 3) α Δ T l, wherein, α is the thermal expansivity of polycrystalline silicon material, so have:
α = ΔL L ( L 2 - L 3 ) · ΔT L
In like manner, on polysilicon driving beam 105, length is L 2-L 3the resistance R of part tRwith medial temperature variation delta T on it rpass be:
R TR = R ∞ ( 1 + a 1 Δ T R + a 2 ΔT R 2 )
In formula, Δ T rwhile coming in contact for pointer 102 and pointer 106, heat drives L on beam 105 2-L 3the medial temperature of part and room temperature poor.And have:
α = Δ L R ( L 2 - L 3 ) · ΔT R
Solve:
Having there are some researches show can be by measuring the temperature coefficient a of polysilicon resistance 1, a 2, therefore, by a 1, a 2as known quantity, process.
By the R measuring ∞and R tLsubstitution resistance formula, is obtained by the radical formula of quadratic equation:
ΔT L = - a 1 ± a 1 2 + 4 a 2 k L 2 a 2 , In formula, k L = R TL - R ∞ R ∞ .
When polysilicon resistance is negative temperature coefficient, before radical sign, get "-" number; When polysilicon resistance is positive temperature coefficient (PTC), before radical sign, get "+" number;
Drive beam 103 length variations Δ L lby geometric relationship, obtained:
ΔL L = g 1 · L 5 L 1
In like manner, by the R measuring ∞and R tRsubstitution resistance formula, is obtained by the radical formula of quadratic equation:
ΔT R = - a 1 ± a 1 2 + 4 a 2 k R 2 a 2 , In formula, k R = R TR - R ∞ R ∞ .
When polysilicon resistance is negative temperature coefficient, before radical sign, get "-" number; When polysilicon resistance is positive temperature coefficient (PTC), before radical sign, get "+" number;
Drive beam 105 length variations Δ L rby geometric relationship, obtained:
Figure BDA0000129166920000059
in formula, g is the most advanced and sophisticated distance of actual deflection counterclockwise of pointer 106.
By thermal expansivity relational expression, obtain:
ΔL R = ΔT R · ΔL L ΔT L
Therefore have:
g = L 1 · ΔT R · ΔL L L 5 · ΔT L
Variable or be physical dimension in formula, or be available measurement calculated value, therefore, the distance g of the most advanced and sophisticated actual deflection counterclockwise of pointer 106 can be calculated and be obtained by above formula.
By g value, can obtain Δ L r, therefore, the strain stress being produced by unrelieved stress in driving beam is:
ϵ = ΔL L - ΔL R 2 · L 2
Unrelieved stress σ is:
σ＝E·ε
E is the Young modulus of polycrystalline silicon material.
If ε=0, represents in polysilicon without unrelieved stress; If ε > 0, represents that polysilicon unrelieved stress is compressive stress; If ε < 0, represents that polysilicon unrelieved stress is tension stress.
The present invention makes spacing maintenance and spacing change size and the character that can effectively react unrelieved stress by the control of pointer initial deflection direction under unrelieved stress effect; The manufacture craft of this test structure is simple, there is no special processing request; During test, adopt heat to drive, measurement parameter is before and after heat drives, to drive the resistance of beam.In use, although adopt expansion principle, measuring to calculate does not need thermal expansivity, the impact of the error while having avoided on-line testing thermal expansivity on measurement result in the present invention.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (3)

1. a polycrystalline silicon material unrelieved stress in situ rest structure, it is characterized in that: comprise three polysilicon deflection pointers, three polysilicon deflection pointers comprise that respectively polysilicon drives beam (101,103,105), polysilicon pointer (102,104,106) He Mao district; Three polysilicon deflection pointers are " product " font to be placed, and pointer (102,104,106) all points to center; Lower left quarter polysilicon deflection pointer is identical with right lower quadrant polysilicon deflection pointer structure, with the vertical center line of test structure left and right mirror to, the center line of top polysilicon deflection pointer is the vertical center line of whole test structure, pointer (104, the 106) opposite direction of the left and right polysilicon deflection pointer of its pointer (102) direction and bottom; It is upper that whole test structure is produced on dielectric substrate (117), after structure is released, drives beam (101,103,105) and pointer (102,104,106) all in suspended state, so that discharge unrelieved stress free-extension and deflection.
2. polycrystalline silicon material unrelieved stress in situ rest structure according to claim 1, it is characterized in that: in described lower left quarter polysilicon deflection pointer, drive in Mao district, beam (103) one end (109) and Mao district, pointer (104) one end (110) and be manufactured with respectively metal electrode (113,114), and the metal electrode (114) in Mao district, pointer (104) one end (110) extends on driving beam (103) always; In described right lower quadrant polysilicon deflection pointer, drive in Mao district, beam (105) one end (112) and Mao district, pointer (106) one end (111) and be manufactured with respectively metal electrode (116,115), and the metal electrode (115) in Mao district, pointer (106) one end (111) extends on driving beam (105) always.
3. polycrystalline silicon material unrelieved stress in situ rest structure according to claim 1, is characterized in that: the driving beam of described three polysilicon deflection pointers (101,103,105) is equal in length.
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CN102565143B (en) * 2012-01-06 2014-01-29 东南大学 On-line testing structure for polycrystalline silicon material residual stress
CN105021331A (en) * 2014-04-29 2015-11-04 上海理工大学 Method for measuring residual stress of polycrystalline material based on X-ray diffraction full spectrum
CN104034604B (en) * 2014-06-03 2016-04-06 东南大学 Thin film silicon material residual stress test structure in dielectric substrate
CN104034449B (en) 2014-06-03 2016-04-13 东南大学 Membraneous material residual stress test structure and method
CN104034583B (en) * 2014-06-03 2016-06-08 东南大学 Thin-film material Poisson's ratio test structure and method
CN104122012B (en) * 2014-06-05 2016-08-24 东南大学 The test structure of a kind of polysilicon membrane residual stress and method of testing thereof
CN106248280B (en) * 2016-08-22 2018-03-20 东南大学 A kind of On-line Measuring Method and measurement apparatus of conductive film material residual stress
CN106404826B (en) * 2016-10-24 2019-03-22 河海大学 A kind of thermal-expansion coefficient of polycrystalline silicon thin film extracting method based on resonance characteristic
CN109238523B (en) * 2018-08-17 2021-02-02 成都振芯科技股份有限公司 Device and method for measuring residual stress of wafer
CN110133106B (en) * 2019-06-05 2021-07-27 河南理工大学 Vibration damage measuring instrument for power transmission line

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