CN102560436A - Vapor deposition equipment - Google Patents

Vapor deposition equipment Download PDF

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Publication number
CN102560436A
CN102560436A CN2010105999358A CN201010599935A CN102560436A CN 102560436 A CN102560436 A CN 102560436A CN 2010105999358 A CN2010105999358 A CN 2010105999358A CN 201010599935 A CN201010599935 A CN 201010599935A CN 102560436 A CN102560436 A CN 102560436A
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sub
spiral winding
vapor deposition
deposition apparatus
processing chamber
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CN2010105999358A
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CN102560436B (en
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张秀川
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The invention provides vapor deposition equipment which comprises a technological chamber and an induction heating coil arranged at the outer part of the technological chamber, wherein the induction heating oil comprises at least two sub-spiral coils which are connected in series and have consistent spiral directions; and the space between adjacent sub-spiral coils is adjustable. The space between adjacent sub-spiral coils is adjusted to adjust temperature distribution in the technological chamber, so that the temperature distribution in the technological chamber tends to be uniform and a uniform technological result can be further obtained.

Description

A kind of vapor deposition apparatus
Technical field
The present invention relates to the microelectronic processing technique field, particularly, relate to a kind of vapor deposition apparatus.
Background technology
Metal organic chemical compound vapor deposition (Metal Organic Chemical Vapor Deposition; Hereinafter to be referred as MOCVD) technology is that the organometallics that utilizes that grows up the sixties in 20th century carries out a kind of compound semiconductor vapour phase epitaxy new technology that metal transports; This technology can accurately be controlled the thickness and the component of epitaxial film on nanoscale; And be applicable to batch process, become the main means of production of photoelectric device at present.
See also Fig. 1, be a kind of schematic block diagram of typical MOCVD equipment.This equipment mainly comprises: integral parts such as processing chamber, airing system and exhaust treatment system.Wherein, as the core component of MOCVD equipment, the structure design of processing chamber and assembly thereof will produce decisive influence for processing quality and equipment productive rate; The quality that especially, can in processing chamber, obtain evenly, temperature field distribution stably will directly determine processing quality.
At present, the MOCVD equipment heating units that adopt a kind of load coil as processing chamber more.See also Fig. 2, be a kind of principle schematic of MOCVD equipment induction heating commonly used.In processing chamber 1 outer setting of this equipment the load coil 2 of helix structure is arranged, this load coil 2 adopts integrated mode to process, thereby its fixed in shape and non-adjustable.In technological process; Be connected with high frequency induction current in the load coil 2, thereby produce inducedmagnetic field 3 in that processing chamber 1 is inner, and be intermediary with inducedmagnetic field 3; Generate eddy current in the heating object in processing chamber 1, thereby play the effect of this object of heating.
Though aforesaid device can be realized certain heat effect by load coil 2,, there is drawback simultaneously inevitably in it.
Because the induction heating effect that when processing can't be considered practical application in the above-mentioned load coil 2, is produced, thereby cause between the Distribution of Magnetic Field of inducedmagnetic field distribution range that this load coil 2 produced processing chamber 1 in and perfect condition existence easily than the problem of large deviation.Situation for example shown in Figure 2, the inducedmagnetic field 3 that load coil 2 is produced in processing chamber 1 demonstrate the intermediate density height, on/the low density phenomenon in following two ends; Usually, the higher eddy current that the zone produced of magnetic density is also stronger, thereby causes near the temperature processing chamber 1 two ends to be lower than the temperature of region intermediate, and then influences the homogeneity of thin film deposition processes.And the generation of this problem mainly is inhomogeneous the causing of coil-span owing to load coil 2, yet because the spacing of above-mentioned load coil is all non-adjustable, therefore can't effectively regulate the temperature distribution situation in the above-mentioned processing chamber.
Summary of the invention
For addressing the above problem, the present invention provides a kind of vapor deposition apparatus, and it can produce equally distributed magnetic field in processing chamber, thereby each assembly in the processing chamber is carried out induction heating equably.
For this reason, the present invention provides a kind of vapor deposition apparatus, comprises the load coil that processing chamber is outside with being arranged at processing chamber.Wherein, load coil comprises at least 2 sub-spiral windings that be cascaded and the hand of spiral is consistent, and the spacing of adjacent sub-spiral winding is adjustable, through the spacing of regulating adjacent sub-spiral winding the temperature distribution in the processing chamber is regulated.
Wherein, between adjacent sub-spiral winding, be provided with adjustable jig, sub-spiral winding be cascaded and the spacing of antithetical phrase spiral winding is regulated by adjustable jig.
Wherein, adjustable jig comprises rail plate and coil connection section, and the coil connection section is used for sub-spiral winding is fixed in rail plate slidably.
Preferably, comprise two coil connection sections in the same adjustable jig, be used for connecting respectively the end of adjacent sub-spiral winding, through regulating distance and the spacing of regulon spiral winding of two coil connection sections on rail plate.
Preferably, the slidably direction of rail plate is consistent with the pitch direction of sub-spiral winding.
Wherein, rail plate comprises chute, and the coil connection section comprises the holding bolt that runs through chute, and the end of sub-spiral winding has the connecting hole suitable with holding bolt.
Wherein, the relative position between adjustable jig and the processing chamber is fixed.
Wherein, adjustable jig adopts electro-conductive material to process.Preferably, the material of adjustable jig employing comprises copper, silver.
Wherein, above-mentioned vapor deposition apparatus comprises the organometallics chemical vapor depsotition equipment.
The present invention has following beneficial effect:
Vapor deposition apparatus provided by the present invention comprises processing chamber and is arranged at the outside load coil of processing chamber; This load coil comprises at least 2 sub-spiral windings that be cascaded and the hand of spiral is consistent, and the spacing of each adjacent sub-spiral winding is adjustable.When processing chamber being carried out induction heating by this load coil; Can regulate the spacing of each the sub-spiral winding in the load coil according to the temperature distribution situation in the processing chamber; Thereby make the distribution of the inducedmagnetic field in the processing chamber be tending towards even; And then the temperature distribution in the processing chamber is tending towards evenly, the final process results comparatively uniformly that obtains.
Description of drawings
Fig. 1 is a kind of schematic block diagram of typical MOCVD equipment;
Fig. 2 is a kind of principle schematic of MOCVD equipment induction heating commonly used.;
Fig. 3 is the fundamental diagram of a specific embodiment of vapor deposition apparatus provided by the invention;
Fig. 4 A is the structural representation of the adjustable jig among Fig. 3; And
Fig. 4 B is the vertical view of adjustable jig shown in Fig. 4 A.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, load coil provided by the invention and the vapor deposition apparatus of using this load coil are described in detail below in conjunction with accompanying drawing.
Vapor deposition apparatus provided by the present invention comprises the load coil that processing chamber is outside with being arranged at processing chamber; This load coil is a volution; It comprises at least 2 sub-spiral windings that be cascaded and the hand of spiral is consistent, and the spacing of adjacent sub-spiral winding is adjustable.In a specific embodiment, can between each sub-spiral winding, adjustable jig be set, by this adjustable jig each sub-spiral winding is cascaded, and the spacing of adjacent sub-spiral winding is regulated.
See also Fig. 3, be the fundamental diagram of a specific embodiment of vapor deposition apparatus provided by the invention.This vapor deposition apparatus comprises processing chamber 1, is arranged on processing chamber 1 load coil 2 on every side.Load coil 2 is made up of a plurality of (shown in Fig. 3 being 4) sub-spiral winding, and integral body structure in the shape of a spiral; Each sub-spiral winding is short spirane structure and hand of spiral unanimity.In addition, in the present embodiment, the number of turn of each sub-spiral winding is identical and be a circle, thereby after sub-spiral winding is serially connected with each, makes each adjustable jig 4 that is used for the connexon spiral winding roughly be in the sustained height direction.And; Because each circle of load coil 2 is an independently sub-spiral winding; Therefore; Each coil-span in the load coil 2 all can accurately be regulated, thereby effectively improves the homogeneity of the inducedmagnetic field in the processing chamber 1, and then improves the homogeneity of processing chamber 1 being carried out induction heating.When practical application, can know the temperature contrast that whether exists in the processing chamber 1 on the vertical direction through the TP that is arranged in the processing chamber 1; If; Can specifically find the position of corresponding sub-regulating winding according to the temperature deviation position; Afterwards the adjustable jig 4 at these sub-spiral winding two ends or any end place is regulated; Thereby change both sides that this sub-spiral winding is adjacent or the spacing between the sub-spiral winding of a side wherein, reaching the purpose that strengthens or weaken the magneticstrength of corresponding position in the processing chamber 1, and then the temperature of regulating this place.More specifically, when the temperature of a certain position is higher in finding processing chamber 1, then can the spacing of this pairing sub-spiral winding in position be transferred greatly, reducing the magnetic density at this place, thereby reduce the temperature at this place; Vice versa.The rest may be inferred, realizes the most at last the adjusting in magnetic field everywhere in the processing chamber 1, thereby make the temperature of each position in the processing chamber 1 be tending towards even.
In the present embodiment; Above-mentioned adjustable jig 4 comprises rail plate and is fixed in the coil connection section on the above-mentioned rail plate slidably; By this coil connection section two adjacent sub-spiral windings are connected on the rail plate slidably, the spacing of each sub-spiral winding are regulated through the position of regulating winding connection section on rail plate.In addition; Above-mentioned rail plate and coil connection section also have the effect that realizes electrical connection between the adjacent sub-spiral winding that makes simultaneously; Thereby the rail plate of the adjustable jig 4 of above-mentioned formation and coil connection section all should adopt the material that is easy to conduct electricity to process, and for example can select the metallic conductor of copper, silver etc.
In a preferred embodiment; Slidably direction that can above-mentioned rail plate is set to the direction with the pitch direction basically identical of each sub-spiral winding; That is: make the slip direction of coil connection section consistent, thereby help coil-span is regulated fast and accurately with the adjustable direction of coil-span.
In another embodiment, can also the relative position of each adjustable jig and processing chamber be fixed.The advantage that is provided with like this is, when regulating the spacing of a certain sub-spiral winding, can avoid adjacent with it sub-spiral winding is caused interference.The concrete measure that is adopted as for fixing each adjustable jig for example can be realized by conventional means such as insulating support; And, can take to be respectively the mode that each adjustable jig is provided with insulating support, also can take all adjustable jigs are fixed in the mode on the same insulating support, thereby this insulating support and all adjustable jigs are set to integrative-structure.
In a further advantageous embodiment, can also automatic-adjusting device be set, thereby realize online adjusting each spacing in the load coil for each adjustable jig.
Though it is pointed out that in above-mentioned embodiment shown in Figure 3, the length that constitutes each sub-spiral winding of load coil 2 is set to equate and be the structure of a circle, and the present invention is not limited thereto; In practical application, the technician fully can be as required and each sub-spiral winding is set to multiturn, and length that can each sub-spiral winding is set to unequal.In addition; Quantity for the sub-spiral winding that constitutes same load coil 2 also is not limited to the quantity in the foregoing description, as long as the quantity of the sub-spiral winding of the same load coil of formation equals or then all should be regarded as protection scope of the present invention more than 2.
See also Fig. 4, be the structural representation of the adjustable jig that adopted in the vapor deposition apparatus provided by the invention.As shown in Figure 4, a kind of chute structure of rail plate 41 concrete employings of this adjustable jig; Correspondingly, coil connection section 42 adopts a kind of holding bolt structure that runs through said chute, and this holding bolt is connected with a fitting nut after passing said chute.Correspondingly, can be provided with and the suitable connecting hole of above-mentioned holding bolt in the end of sub-spiral winding, thereby sub-spiral winding is connected with this holding bolt.When the spacing that needs the antithetical phrase spiral winding is regulated; Only need unscrew above-mentioned holding bolt and fitting nut; Holding bolt is moved in above-mentioned chute, and the above-mentioned holding bolt/nut of after holding bolt arrives the desired position, screwing get final product to fix.
Be understood that easily; When the spacing of using above-mentioned adjustable jig antithetical phrase spiral winding is regulated; Can adopt multiple different regulative mode; For example: can be through regulating two positions of coil connection section on rail plate simultaneously, thus change distance and the spacing of regulon spiral winding between the two; Also can only regulate position and the spacing of regulon spiral winding of one of them coil connection section on rail plate; And other mode that is easy to realize.
In addition, though the quantity of the coil connection section in the adjustable in the present embodiment jig is set to two, the present invention is not limited thereto; For example a plurality of coil connection sections can also be set on same adjustable jig, thereby through sub-spiral winding being connected the adjusting that realizes antithetical phrase spiral winding spacing on the different coil connection sections.
In sum, in the vapor deposition apparatus provided by the invention, the load coil of adjustable distance is arranged in the processing chamber outer setting.This load coil comprises at least 2 sub-spiral windings and the adjustable jig that is used to be connected each sub-spiral winding.The coil connection section that is used for connexon spiral winding end on each adjustable jig can move on the pitch direction of said sub-spiral winding, thereby can realize the regulatory function to the spacing of each sub-spiral winding.Therefore; When application vapor deposition apparatus provided by the invention carries out the substrate treatment process; Can be according to the temperature distribution situation in the processing chamber, the spacing of the sub-spiral winding that is in processing chamber different positions place is regulated, thereby regulate the Distribution of Magnetic Field in the processing chamber and make it to be tending towards even; Distribute and make it to be tending towards with the temperature field of regulating each position in the processing chamber and evenly finally can obtain uniform process results.
In practical application, this vapor deposition apparatus for example can be a chemical vapor depsotition equipment (CVD), particularly, can be organometallics chemical vapor depsotition equipment (MOCVD) etc.
It is understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.

Claims (10)

1. vapor deposition apparatus; Comprise the load coil that processing chamber is outside with being arranged at said processing chamber; It is characterized in that; Said load coil comprises at least 2 sub-spiral windings that be cascaded and the hand of spiral is consistent, and the spacing of adjacent sub-spiral winding is adjustable, through the spacing of regulating adjacent sub-spiral winding the temperature distribution in the said processing chamber is regulated.
2. vapor deposition apparatus according to claim 1 is characterized in that, between adjacent sub-spiral winding, is provided with adjustable jig, by said adjustable jig said sub-spiral winding is cascaded and the spacing of antithetical phrase spiral winding is regulated.
3. vapor deposition apparatus according to claim 2 is characterized in that, said adjustable jig comprises rail plate and coil connection section, and said coil connection section is used for said sub-spiral winding is fixed in said rail plate slidably.
4. vapor deposition apparatus according to claim 3; It is characterized in that; Comprise two said coil connection sections in the same said adjustable jig; Be used for connecting respectively the end of adjacent sub-spiral winding, through regulating the spacing that the distance of said two coil connection sections on said rail plate regulated said sub-spiral winding.
5. according to claim 3 or 4 described vapor deposition apparatus, it is characterized in that the slidably direction of said rail plate is consistent with the pitch direction of said sub-spiral winding.
6. according to claim 3 or 4 described vapor deposition apparatus; It is characterized in that; Said rail plate comprises chute, and said coil connection section comprises the holding bolt that runs through said chute, and the end of said sub-spiral winding has and the suitable connecting hole of said holding bolt.
7. vapor deposition apparatus according to claim 2 is characterized in that, the relative position between said adjustable jig and the said processing chamber is fixed.
8. vapor deposition apparatus according to claim 2 is characterized in that, said adjustable jig adopts electro-conductive material to process.
9. vapor deposition apparatus according to claim 8 is characterized in that, the material that said adjustable jig adopts comprises copper, silver.
10. according to any described vapor deposition apparatus among the claim 1-9, it is characterized in that said vapor deposition apparatus comprises the organometallics chemical vapor depsotition equipment.
CN201010599935.8A 2010-12-13 2010-12-13 Vapor deposition equipment Active CN102560436B (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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CN102560436B CN102560436B (en) 2014-07-16

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103578905A (en) * 2012-07-30 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 Inductively coupled plasma processing device
CN104470017A (en) * 2014-12-11 2015-03-25 河北同光晶体有限公司 Induction heating coil device
CN105200515A (en) * 2015-09-24 2015-12-30 山东大学 Induction coil for SiC single-crystal growth furnace and application thereof
CN109600873A (en) * 2018-11-23 2019-04-09 中国科学院半导体研究所 Adjustable induction coil device
CN113943974A (en) * 2016-11-04 2022-01-18 洛佩诗公司 Reactor for epitaxial deposition and heating method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216420A (en) * 1985-03-22 1986-09-26 Toshiba Mach Co Ltd Vapor phase growth device
JP2987512B2 (en) * 1990-08-14 1999-12-06 日本酸素株式会社 CVD equipment
CN1648283A (en) * 2004-01-30 2005-08-03 三星电子株式会社 Plasma chemical vapor deposition system and method for coating both sides of substrate
CN1820545A (en) * 2003-05-23 2006-08-16 Mrl工业公司 Retention mechanism for heating coil of high temperature diffusion furnace
CN101502168A (en) * 2006-08-07 2009-08-05 马塞尔-布加蒂股份有限公司 Apparatus for porous material densification

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216420A (en) * 1985-03-22 1986-09-26 Toshiba Mach Co Ltd Vapor phase growth device
JP2987512B2 (en) * 1990-08-14 1999-12-06 日本酸素株式会社 CVD equipment
CN1820545A (en) * 2003-05-23 2006-08-16 Mrl工业公司 Retention mechanism for heating coil of high temperature diffusion furnace
CN1648283A (en) * 2004-01-30 2005-08-03 三星电子株式会社 Plasma chemical vapor deposition system and method for coating both sides of substrate
CN101502168A (en) * 2006-08-07 2009-08-05 马塞尔-布加蒂股份有限公司 Apparatus for porous material densification

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103578905A (en) * 2012-07-30 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 Inductively coupled plasma processing device
CN103578905B (en) * 2012-07-30 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Inductively coupled plasma processing equipment
CN104470017A (en) * 2014-12-11 2015-03-25 河北同光晶体有限公司 Induction heating coil device
CN104470017B (en) * 2014-12-11 2016-02-03 河北同光晶体有限公司 A kind of load coil device
CN105200515A (en) * 2015-09-24 2015-12-30 山东大学 Induction coil for SiC single-crystal growth furnace and application thereof
CN113943974A (en) * 2016-11-04 2022-01-18 洛佩诗公司 Reactor for epitaxial deposition and heating method thereof
US11834753B2 (en) 2016-11-04 2023-12-05 Lpe S.P.A. Reactor for epitaxial deposition with a heating inductor with movable turns
CN109600873A (en) * 2018-11-23 2019-04-09 中国科学院半导体研究所 Adjustable induction coil device

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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No.

Patentee after: Beijing North China microelectronics equipment Co Ltd

Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South

Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing

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