CN102559192B - Etching liquor used for etching microwave dielectric film and preparation method thereof - Google Patents
Etching liquor used for etching microwave dielectric film and preparation method thereof Download PDFInfo
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- CN102559192B CN102559192B CN2011104559980A CN201110455998A CN102559192B CN 102559192 B CN102559192 B CN 102559192B CN 2011104559980 A CN2011104559980 A CN 2011104559980A CN 201110455998 A CN201110455998 A CN 201110455998A CN 102559192 B CN102559192 B CN 102559192B
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Abstract
The invention provides etching liquor used for etching a microwave dielectric film and a preparation method thereof, relating to the technical field of micro electronics. The etching liquor provided by the invention comprises the components of HBF4, HNO3 and H2O in mass ratio of being 1: x: 5, wherein x is more than or equal to 0.5 and less than or equal to 3, the concentration of HBF4 is 3.2-9.6%, and the concentration of HNO3 is 65-68%. The etching liquor provided by the invention has the beneficial effect that the rare-earth-containing oxide microwave dielectric film etched by adopting the etching liquor provided by the invention has clear edge and low lateral erosion ratio.
Description
Technical field
The present invention relates to microelectronics technology, particularly the electric thin technology of preparing.
Background technology
Be applied to the thin dielectric film of microwave integrated circuit, higher DIELECTRIC CONSTANT ε must be arranged
r, high quality factor Q and low temperature coefficient of resonance frequency τ
f.The size of microwave device and the DIELECTRIC CONSTANT ε of microwave material
rSquare root be inversely proportional to, so ε
rLarger, more likely reduce the volume of microwave equipment.All there is loss in any thin dielectric film, at electricity, leads in loss and the negligible situation of radiation loss, and Q equals 1/tan δ, and tan δ is dielectric loss.τ
fWhile being defined as 1 ℃ of temperature variation, the variable quantity of resonant frequency, general microwave equipment all requires alap τ
f.Good performance performance is arranged during as bulk containing the microwave-medium of rare earth oxide, if can prepare the microwave dielectric film close with the ceramic body material property, be applied to will there is important effect to the integrated and filming that realizes microwave circuit in microwave integrated circuit.
Pattern is that the microwave dielectric film pattern method containing rare earth oxide commonly used is etching containing one of gordian technique of the microwave film application of rare earth oxide.Dry etching has the characteristics such as the high and big area etching homogeneity of graphics precision is good containing the dielectric film of rare earth oxide, but required equipment is expensive, etch rate is low, to bottom electrode Pt poor selectivity and easily cause the charing of photoresist material mask and be difficult to removal.Wet etching is that a kind of cost is low, and the film pattern method that etch rate is fast is greater than the figure of 3 μ m for characteristic dimension, wet etching can yet be regarded as a kind of economy and practical film pattern method.
About the etching of dielectric film, the wet etching liquid of Chinese patent ZL200810045321.8 report is used hydrofluoric acid, water and HNO
3Mixing solutions, this etching liquid can only etching containing the dielectric film of rare earth oxide, greatly limited the application containing the rare earth oxide dielectric film.
Summary of the invention
Technical problem to be solved by this invention is that a kind of etching liquid and preparation method who contains the microwave dielectric film of rare earth oxide for etching is provided.
The technical scheme that the present invention solve the technical problem employing is, the etching liquid for etching microwave dielectric film, is characterized in that, calculates by quality ratio, and its component is:
HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein.
The present invention also provides a kind of preparation method of the etching liquid for etching microwave dielectric film, it is characterized in that, comprises the steps:
The hydrofluoric acid solution HF that the first step preparation mass ratio is 5%～20%: H
2O=1: a (1≤a≤7);
The H that second step preparation mass ratio is 5.4%～12.9%
3BO
3Solution, H
3BO
3: H
2O=3: b (20≤b≤52.2);
The 3rd step is by HF solution and the H of configuring in step 1, step 2
3BO
3The ratio of solution in mass ratio 1: c (1.2≤c≤2.8) is mixed, and stirs, fully cooling after, sealing is placed 2 hours, obtains the fluoborate solution that concentration is 3.2%～9.6%;
Add a certain amount of HNO in the fluoborate solution that the 4th step prepares to step 3
3And stir, obtaining the film etching liquid, component is (mass ratio): HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein.
The invention has the beneficial effects as follows, adopt etching of the present invention containing the rare earth oxide microwave dielectric film, edge clear, lateral erosion is than little.
The accompanying drawing explanation
Fig. 1 is for adopting BNST etching effect figure of the present invention.
Fig. 2 is HNO in etching liquid
3The graph of relation of content and etch rate.
Fig. 3 is BNST film EDS figure before etching.
Fig. 4 is BNST film EDS figure after etching.
Embodiment
Adopt etching BaO-Nd of the present invention
2O
3-Sm
2O
3-TiO
2System's (being called for short BNST) microwave dielectric film material.The etching liquid starting material are: hydrofluoric acid (HF); Boric acid (H
3BO
3); Nitric acid (HNO
3); Water (H
2O).
Configuration proportion and step:
The HF solution that the first step preparation mass ratio is 20%, HF: H
2O=1: 1.
Second step preparation mass ratio is 12.9%H
3BO
3Solution, H
3BO
3: H
2O=3: 20 (needing the heating in water bath of 60 ℃).
The 3rd step preparation fluoborate solution (HBF
4), 20%HF: 12.9%H
3BO
3=1: 1.2.12.9%H
3BO
3Solution pour in the plastic containers of the HF solution that fills 20%, the limit bevelling stirs with sticking plaster, in this reaction process, can emit a large amount of heat, plastic containers need be placed in cold water.After the solution prepared is cooling, plastic containers are taken out from cold water, place two hours after sealing.
The 4th step preparation HNO
3Quality is 0.5～3 than scope containing rare earth oxide microwave dielectric film etching liquid, and component is: HBF
4: HNO
3: H
2O=1: x: 5, wherein 0.5≤x≤3 add a certain amount of HNO in the fluoborate solution prepared
3And stir evenly with sticking plaster.HNO in etching liquid
3The relation of content and etch rate is as Fig. 2.
Fig. 3 is BNST film EDS image before etching, and each component of BNST film all exists and there is no an impurity element as seen from the figure.Fig. 4 is the BNST film EDS image after employing etching of the present invention, and each component of BNST film all is etched totally as seen from the figure.
Claims (1)
1. for the preparation method of the etching liquid of etching microwave dielectric film, it is characterized in that, calculate by quality ratio, the etching liquid component is:
HBF
4: HNO
3: H
2O=1:x:5, wherein 0.5≤x≤3;
Wherein, HBF
4Concentration be 3.2%～9.6%, HNO
3Concentration be 65%～68%;
The preparation method comprises the steps:
The hydrofluoric acid solution that step 1 preparation mass ratio is 5%～20%, i.e. HF:H
2O=1:a, 1≤a≤7;
The H that step 2 preparation mass ratio is 5.4%～12.9%
3BO
3Solution, i.e. H
3BO
3: H
2O=3:b, 20≤b≤52.2;
Step 3 is by HF solution and the H of preparing in step 1, step 2
3BO
3The solution ratio of 1:c in mass ratio mixes, and 1.2≤c≤2.8, stir, fully cooling after, sealing is placed, and obtains the fluoborate solution that concentration is 3.2%～9.6%;
Add a certain amount of HNO in the fluoborate solution that step 4 prepares to step 3
3And stir, obtain the film etching liquid, in mass ratio, component is: HBF
4: HNO
3: H
2O=1:x:5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104559980A CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquor used for etching microwave dielectric film and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104559980A CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquor used for etching microwave dielectric film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102559192A CN102559192A (en) | 2012-07-11 |
| CN102559192B true CN102559192B (en) | 2013-12-04 |
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ID=46405829
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|---|---|---|---|
| CN2011104559980A Active CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquor used for etching microwave dielectric film and preparation method thereof |
Country Status (1)
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994817A (en) * | 1975-07-28 | 1976-11-30 | Rockwell International Corporation | Etchant for etching silicon |
| SU836213A1 (en) * | 1977-12-21 | 1981-06-07 | Ордена Трудового Красного Знамениинститут Химии И Химической Технологииан Литовской Ccp | Aqueus solution for pickling aluminium and its alloys |
-
2011
- 2011-12-30 CN CN2011104559980A patent/CN102559192B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994817A (en) * | 1975-07-28 | 1976-11-30 | Rockwell International Corporation | Etchant for etching silicon |
| SU836213A1 (en) * | 1977-12-21 | 1981-06-07 | Ордена Трудового Красного Знамениинститут Химии И Химической Технологииан Литовской Ccp | Aqueus solution for pickling aluminium and its alloys |
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|---|---|
| CN102559192A (en) | 2012-07-11 |
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