CN102559192A - Etching liquid for etching microwave dielectric film and preparation method thereof - Google Patents
Etching liquid for etching microwave dielectric film and preparation method thereof Download PDFInfo
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- CN102559192A CN102559192A CN2011104559980A CN201110455998A CN102559192A CN 102559192 A CN102559192 A CN 102559192A CN 2011104559980 A CN2011104559980 A CN 2011104559980A CN 201110455998 A CN201110455998 A CN 201110455998A CN 102559192 A CN102559192 A CN 102559192A
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- etching
- dielectric film
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- preparation
- hno
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Links
- 238000005530 etching Methods 0.000 title claims abstract description 36
- 239000007788 liquid Substances 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 229910004039 HBF4 Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 23
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011505 plaster Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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Abstract
An etching liquid for etching a microwave dielectric film and a preparation method thereof relate to the technical field of microelectronics. The etching solution comprises the following components in percentage by mass: HBF4∶HNO3∶H2O is 1: x: 5, wherein x is more than or equal to 0.5 and less than or equal to 3; among them, HBF4The concentration of is 3.2% -9.6%, and HNO3The concentration of is 65-68%. The invention has the advantages that the microwave dielectric film containing rare earth oxide etched by the invention has clear edge and small side etching ratio.
Description
Technical field
The present invention relates to microelectronics technology, particularly the electric thin technology of preparing.
Background technology
Be applied to the thin dielectric film of microwave integrated circuit, higher dielectric constant ε must be arranged
r, high quality factor Q and low temperature coefficient of resonance frequency τ
fThe size of microwave device and the DIELECTRIC CONSTANTS of microwave material
rSquare root be inversely proportional to, so ε
rBig more, might reduce the volume of microwave equipment more.All there is loss in any thin dielectric film, leads under loss and the negligible situation of radiation loss at electricity, and Q equals 1/tan δ, and tan δ is a dielectric loss.τ
fWhen being defined as 1 ℃ of temperature variation, the change of resonance frequency amount, general microwave equipment all requires alap τ
fThe microwave-medium that contains rare earth oxide has good performance performance during as bulk; If can prepare the microwave-medium film close, be applied to have important effect to the integrated and filmization that realizes microwave circuit in the microwave integrated circuit with the ceramic body material property.
Micrographicsization is one of microwave film key technologies for application that contains rare earth oxide, and the microwave-medium thin film micrographics method that contains rare earth oxide commonly used is an etching.The dielectric film that dry etching contains rare earth oxide have figure transform precision high with characteristics such as the big area etching homogeneity is good, but required equipment is expensive, etch rate is low, to lower conducting dome Pt poor selectivity and be prone to cause the charing of photoresist material mask and be difficult to removal.Wet etching is that a kind of cost is low, the film pattern method that etch rate is fast, and for the figure of characteristic dimension greater than 3 μ m, wet etching can yet be regarded as a kind of economy and practical film pattern method.
About the etching of dielectric film, the wet etching liquid of Chinese patent ZL200810045321.8 report uses hydrofluoric acid, water and HNO
3Mixing solutions, this etching liquid can only etching contain the dielectric film of rare earth oxide, has greatly limited the application that contains the rare earth oxide dielectric film.
Summary of the invention
Technical problem to be solved by this invention is that a kind of etching liquid and preparation method that etching contains the microwave-medium film of rare earth oxide that be used for is provided.
The technical scheme that the present invention solve the technical problem employing is, is used for the etching liquid of etching microwave dielectric film, it is characterized in that, calculates by quality ratio, and its component is:
HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein.
The present invention also provides a kind of preparation method who is used for the etching liquid of etching microwave dielectric film, it is characterized in that, comprises the steps:
The first step preparation mass ratio is 5%～20% hydrofluoric acid solution HF: H
2O=1: a (1≤a≤7);
Second step preparation mass ratio is 5.4%～12.9% H
3BO
3Solution, H
3BO
3: H
2O=3: b (20≤b≤52.2);
The 3rd step is with HF solution and the H of disposing in step 1, the step 2
3BO
3Solution is pressed the mixed of mass ratio 1: c (1.2≤c≤2.8), stirs, and fully after the cooling, sealing was placed 2 hours, obtains concentration and be 3.2%～9.6% fluoborate solution;
The 4th step added certain amount of H NO in the fluoborate solution that step 3 prepares
3And stir, obtaining the film etching liquid, component is (mass ratio): HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein.
The invention has the beneficial effects as follows that adopts etching of the present invention contains rare earth oxide microwave-medium film, edge clear, lateral erosion is than little.
Description of drawings
Fig. 1 is for adopting BNST etching effect figure of the present invention.
Fig. 2 is HNO in the etching liquid
3The graph of relation of content and etch rate.
Fig. 3 is BNST film EDS figure before the etching.
Fig. 4 is BNST film EDS figure after the etching.
Embodiment
Adopt etching BaO-Nd of the present invention
2O
3-Sm
2O
3-TiO
2System's (being called for short BNST) microwave-medium thin-film material.The etching liquid starting material are: hydrofluoric acid (HF); Boric acid (H
3BO
3); Nitric acid (HNO
3); Water (H
2O).
Configuration proportion and step:
The first step preparation mass ratio is 20% HF solution, HF: H
2O=1: 1.
Second step preparation mass ratio is 12.9%H
3BO
3Solution, H
3BO
3: H
2O=3: 20 (needing 60 ℃ heating in water bath).
The 3rd step preparation fluoborate solution (HBF
4), 20%HF: 12.9%H
3BO
3=1: 1.2.12.9%H
3BO
3Solution pour in the plastic containers that fill 20% HF solution, the limit bevelling stirs with sticking plaster, can emit a large amount of heat in this reaction process, plastic containers need be placed in the cold water.After the solution cooling for preparing, plastic containers are taken out from cold water, placed two hours the sealing back.
The 4th step preparation HNO
3Quality than scope be 0.5～3 contain rare earth oxide microwave-medium film etching liquid, component is: HBF
4: HNO
3: H
2O=1: x: 5, wherein 0.5≤x≤3 add certain amount of H NO in the fluoborate solution for preparing
3And stir with sticking plaster.HNO in the etching liquid
3The relation of content and etch rate such as Fig. 2.
Fig. 3 is a BNST film EDS image before the etching, can know that by figure each component of BNST film all exists and do not have an impurity element.Fig. 4 is the BNST film EDS image after the employing etching of the present invention, can know that by figure each component of BNST film all is etched totally.
Claims (2)
1. be used for the etching liquid of etching microwave dielectric film, it is characterized in that, calculate by quality ratio, its component is:
HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein;
Wherein, HBF
4Concentration be 3.2%～9.6%, HNO
3Concentration be 65%～68%.
2. the preparation method who is used for etching microwave dielectric film etching liquid as claimed in claim 1 is characterized in that, comprises the steps:
Step 1 preparation mass ratio is 5%～20% hydrofluoric acid solution HF: H
2O=1: a;
Step 2 preparation mass ratio is 5.43%～12.96% H
3BO
3Solution, H
3BO
3: H
2O=3: b;
Step 3 is with HF solution and the H of disposing in step 1, the step 2
3BO
3Solution is pressed the mixed of mass ratio 1: c, stirs, and fully after the cooling, sealing is placed, and obtains concentration and be 3.2%～9.6% fluoborate solution;
Step 4 adds certain amount of H NO in the fluoborate solution that step 3 prepares
3And stir, obtaining the film etching liquid, component is (mass ratio): HBF
4: HNO
3: H
2O=1: x: 5,0.5≤x≤3 wherein;
The scope of aforementioned a, b, c is: 1≤a≤7,20≤b≤52.2,1.2≤c≤2.8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104559980A CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquid for etching microwave dielectric film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104559980A CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquid for etching microwave dielectric film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102559192A true CN102559192A (en) | 2012-07-11 |
| CN102559192B CN102559192B (en) | 2013-12-04 |
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ID=46405829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104559980A Expired - Fee Related CN102559192B (en) | 2011-12-30 | 2011-12-30 | Etching liquid for etching microwave dielectric film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102559192B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994817A (en) * | 1975-07-28 | 1976-11-30 | Rockwell International Corporation | Etchant for etching silicon |
| SU836213A1 (en) * | 1977-12-21 | 1981-06-07 | Ордена Трудового Красного Знамениинститут Химии И Химической Технологииан Литовской Ccp | Aqueus solution for pickling aluminium and its alloys |
-
2011
- 2011-12-30 CN CN2011104559980A patent/CN102559192B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994817A (en) * | 1975-07-28 | 1976-11-30 | Rockwell International Corporation | Etchant for etching silicon |
| SU836213A1 (en) * | 1977-12-21 | 1981-06-07 | Ордена Трудового Красного Знамениинститут Химии И Химической Технологииан Литовской Ccp | Aqueus solution for pickling aluminium and its alloys |
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| Publication number | Publication date |
|---|---|
| CN102559192B (en) | 2013-12-04 |
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