CN102543799A - Etching control method and control method for semiconductor manufacturing process - Google Patents
Etching control method and control method for semiconductor manufacturing process Download PDFInfo
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- CN102543799A CN102543799A CN201210030446XA CN201210030446A CN102543799A CN 102543799 A CN102543799 A CN 102543799A CN 201210030446X A CN201210030446X A CN 201210030446XA CN 201210030446 A CN201210030446 A CN 201210030446A CN 102543799 A CN102543799 A CN 102543799A
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Abstract
The invention provides an etching control method and a control method for a semiconductor manufacturing process. The etching control method comprises the following steps of: giving a transmission module air pressure alarm when the air pressure of a transmission module deviates; checking a transmission module air pressure alarm record in real time by using an equipment automatic system, and judging whether the transmission module air pressure alarm is given; under the condition that the transmission module air pressure alarm is given, immediately sending an operation stopping command to a machine table by the equipment automatic system; after the machine table receives the command, automatically stopping the operating process flow of a loading and unloading cavity by etching equipment, and stopping reaction of a defective wafer; and continuously processing the defective wafer. Compared with the prior art, the invention has the advantage that: by adoption of the technical scheme, scrapping of the wafer and failure of a device can be avoided to the greatest extent when the air pressure of the transmission module deviates.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the semiconductor fabrication process control method that the present invention relates to a kind of etching control method and adopted this etching control method.
Background technology
Etching is a field of semiconductor manufacture technology commonly used.Semiconductor etching device comprises that the model such as Lam company is the etching apparatus the equipment of 9400DFM and 9600DFMP.
In semiconductor etching process, among the delivery module TM of above-mentioned semiconductor etching device the air pressure skew can take place.At this moment, there is the risk that falls to having dust in the wafer that does not have to handle, further causes the etching failure thus.
When because former such as the family of power and influence is leaked thereby when causing air pressure skew (for example greater than 200mt) to take place; The equipment automatization system of the etching apparatus such as 9400DFM and 9600DFMP will suspend when pre-treatment batch wafer, but the not arrestment operation of equipment automatization system.
Particularly, as shown in Figure 1, wherein show the etching control method when the air pressure skew occurring according to prior art.
In state 1, the technology among the first loading unloading chamber LC1 is carried out, and this belongs to the normal process state.
On the other hand, in state 2, unloading is accomplished and is prepared in the second loading unloading chamber LC2 work; The second loading unloading chamber LC2 is state 3 from the vacuum gas filling to the atmosphere, if existence 4 is the separation valve door gas leakage of the second loading unloading chamber LC2 and delivery module TM at this moment, for example air pressure＞200mt of delivery module TM (state 5) can occur.Thus, 6 the delivery module air pressure warning that gets the hang of.
When the delivery module air pressure warning of state 6 occurs, suspend the wafer operation (state 7) of the first loading unloading chamber LC1.
After the second loading unloading chamber LC2 accomplished unloading, the second loading unloading chamber LC2 loading worked on (state 8), and the second loading unloading chamber LC2 bleeds, promptly from vacuum atmosphere (state 9), because state 4 makes the air pressure of delivery module TM become 90mt (state 10).After this, TM air pressure is eliminated (state 11) automatically.At last, the operation among the first loading unloading chamber LC1 continues (state 12).
But there is a problem in said process, becomes 90mt because system only makes wafer flow process operation suspend the stable gas pressure of waiting for delivery module TM when the air pressure skew takes place; So, if the wafer-process flow process continues after the stable gas pressure of delivery module TM, then might cause during the air pressure skew, falling to having the wafer of dust still to be processed, thereby stop etching reaction, cause the etching failure, cause wafer loss and component failure thus.
Summary of the invention
Technical problem to be solved by this invention is to have above-mentioned defective in the prior art, and a kind of semiconductor fabrication process control method that can when the skew of delivery module air pressure take place, avoid the etching control method of wafer loss and component failure as far as possible and adopt this etching control method is provided.
According to a first aspect of the invention, a kind of etching control method is provided, it comprises: when the skew of delivery module air pressure takes place, send the warning of delivery module air pressure; Utilize equipment automatization systems inspection delivery module air pressure warning record, determined whether the warning of delivery module air pressure; Existing under the situation of delivery module air pressure warning, send the order that stops technological process to board, etching machine is according to the order of equipment automatization system, and the technological process in the unloading chamber that stops to freight makes defective wafer stop reaction; Thereby the defective wafer of individual processing.
Preferably, said etching control method also comprises step: the defective wafer that screens is handled to eliminate defective, and the wafer that offsets subsequently except defective carries out normal process.
Preferably, the skew of delivery module air pressure is because (LC2&TM) isolating valve leakage of loading unloading chamber and delivery module causes.
According to a second aspect of the invention, a kind of semiconductor fabrication process control method is provided, has it is characterized in that adopting etching control method according to a first aspect of the invention.
Through adopting technical scheme of the present invention, compared with prior art, can, the skew of delivery module air pressure avoid wafer loss and component failure when taking place as far as possible.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the etching control method when the air pressure skew occurring according to prior art.
Fig. 2 schematically shows the etching control method when the air pressure skew occurring according to the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the etching control method when the air pressure skew occurring according to the embodiment of the invention.
As shown in Figure 2, state 1 to state 7 is identical with prior art shown in Figure 1.
That is, in state 1, the technology among the first loading unloading chamber LC1 is carried out, and this belongs to the normal process state.
On the other hand, in state 2, unloading is accomplished and is prepared in the second loading unloading chamber LC2 work; This is a state 3 to the second loading unloading chamber LC2 from the vacuum gas filling to the atmosphere; The separation valve door gas leakage of chamber LC2 and delivery module TM if existence 4 i.e. second loadings this moment are unloaded; When taking place simultaneously, air pressure＞200mt (state 5) of delivery module TM can appear at state 3 (the second loading unloading chamber LC2 is from the vacuum gas filling to the atmosphere) and state 4 (the separation valve door gas leakage of the second loading unloading chamber LC2 and delivery module TM).Thus, 6 the delivery module air pressure warning that gets the hang of.When the delivery module air pressure warning of state 6 occurs, suspend the wafer operation (state 7) of LC1.
Different with prior art shown in Figure 1 is, after the delivery module air pressure warning of state 6 occurs, and execution in step A: utilize the EAP of equipment automatization system real-time inspection delivery module air pressure warning record, determined whether the warning of delivery module air pressure.
Execution in step B under the situation that has the warning of delivery module air pressure: send board order out of service.
After this, execution in step C: after etching machine is received the order of EAP, stop the first loading unloading chamber LC1 technological process,, thereby make defective wafer stop reaction.
At last, execution in step D: the defective wafer of individual processing.
Utilize such scheme, detection system abnormality as soon as possible, and can avoid wafer loss as soon as possible.
Preferably, can handle to eliminate defective the defective wafer that screens among the step C, the wafer that offsets subsequently except defective carries out normal process.
Need to prove; Though the skew of delivery module air pressure is because the isolating valve leakage of the second loading unloading chamber LC2 and delivery module TM causes in the example that illustrates; But also possibly be that other reason causes obviously, and the present invention is useful equally to the delivery module air pressure skew that other reason causes.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (4)
1. etching control method is characterized in that comprising:
, the skew of delivery module air pressure sends the warning of delivery module air pressure when taking place;
Utilize equipment automatization system real-time inspection delivery module air pressure warning record, determined whether the warning of delivery module air pressure;
Under the situation that has the warning of delivery module air pressure; The equipment automatization system sends order out of service to board at once; After etching machine received orders, etching machines stopped loading unloading chamber operation process flow process automatically, and makes defective wafer stop reaction; Continue to handle defective wafer separately.
2. etching control method according to claim 1 is characterized in that also comprising step: the defective wafer that screens is handled to eliminate defective, and the wafer that offsets subsequently except defective carries out normal process.
3. etching control method according to claim 1 and 2 is characterized in that, the skew of delivery module air pressure is because the isolating valve leakage of loading unloading chamber and delivery module causes.
4. a semiconductor fabrication process control method is characterized in that having adopted according to the described etching control method of one of claim 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210030446XA CN102543799A (en) | 2012-02-10 | 2012-02-10 | Etching control method and control method for semiconductor manufacturing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210030446XA CN102543799A (en) | 2012-02-10 | 2012-02-10 | Etching control method and control method for semiconductor manufacturing process |
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| CN102543799A true CN102543799A (en) | 2012-07-04 |
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| CN201210030446XA Pending CN102543799A (en) | 2012-02-10 | 2012-02-10 | Etching control method and control method for semiconductor manufacturing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952775A (en) * | 2014-03-28 | 2015-09-30 | 株式会社荏原制作所 | Substrate processing method |
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2012
- 2012-02-10 CN CN201210030446XA patent/CN102543799A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952775A (en) * | 2014-03-28 | 2015-09-30 | 株式会社荏原制作所 | Substrate processing method |
| CN104952775B (en) * | 2014-03-28 | 2020-04-07 | 株式会社荏原制作所 | Substrate processing method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20140425 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20120704 |