CN102543644A - 干法刻蚀设备反应腔的上部电极 - Google Patents
干法刻蚀设备反应腔的上部电极 Download PDFInfo
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- CN102543644A CN102543644A CN2010105963322A CN201010596332A CN102543644A CN 102543644 A CN102543644 A CN 102543644A CN 2010105963322 A CN2010105963322 A CN 2010105963322A CN 201010596332 A CN201010596332 A CN 201010596332A CN 102543644 A CN102543644 A CN 102543644A
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- upper electrode
- dry etching
- metal
- reaction cavity
- etching device
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CN2010105963322A CN102543644A (zh) | 2010-12-20 | 2010-12-20 | 干法刻蚀设备反应腔的上部电极 |
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CN2010105963322A CN102543644A (zh) | 2010-12-20 | 2010-12-20 | 干法刻蚀设备反应腔的上部电极 |
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CN102543644A true CN102543644A (zh) | 2012-07-04 |
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CN2010105963322A Pending CN102543644A (zh) | 2010-12-20 | 2010-12-20 | 干法刻蚀设备反应腔的上部电极 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111893537A (zh) * | 2020-07-16 | 2020-11-06 | 合肥微睿光电科技有限公司 | 一种通过改变装挂方式提高大尺寸上部电极板阳极氧化膜均匀性的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087341A (en) * | 1984-03-23 | 1992-02-11 | Anelva Corporation | Dry etching apparatus and method |
US20010050147A1 (en) * | 1999-01-20 | 2001-12-13 | Makoto Nawata | Plasma etching system |
CN1512551A (zh) * | 2002-10-31 | 2004-07-14 | ��ķ�о�����˾ | 用于蚀刻介质材料的方法 |
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2010
- 2010-12-20 CN CN2010105963322A patent/CN102543644A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087341A (en) * | 1984-03-23 | 1992-02-11 | Anelva Corporation | Dry etching apparatus and method |
US20010050147A1 (en) * | 1999-01-20 | 2001-12-13 | Makoto Nawata | Plasma etching system |
CN1512551A (zh) * | 2002-10-31 | 2004-07-14 | ��ķ�о�����˾ | 用于蚀刻介质材料的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111893537A (zh) * | 2020-07-16 | 2020-11-06 | 合肥微睿光电科技有限公司 | 一种通过改变装挂方式提高大尺寸上部电极板阳极氧化膜均匀性的方法 |
CN111893537B (zh) * | 2020-07-16 | 2021-06-22 | 合肥微睿光电科技有限公司 | 一种通过改变装挂方式提高大尺寸上部电极板阳极氧化膜均匀性的方法 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |