CN102543170A - Method for realizing low power consumption of phase change memory - Google Patents

Method for realizing low power consumption of phase change memory Download PDF

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CN102543170A
CN102543170A CN2012100366413A CN201210036641A CN102543170A CN 102543170 A CN102543170 A CN 102543170A CN 2012100366413 A CN2012100366413 A CN 2012100366413A CN 201210036641 A CN201210036641 A CN 201210036641A CN 102543170 A CN102543170 A CN 102543170A
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current
time
resistance
reset
phase transition
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CN102543170B (en
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王瑞哲
洪红维
李秦
黄崇礼
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BAMC-BEIJING Corp
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Abstract

The invention discloses a method for realizing lower power consumption of a phase change memory, comprising the following steps of: A, carrying out electric property detection on a material of the phase change memory, so as to obtain first time of changing resistance of the phase change memory from high to low and a first maximum current and a first minimum current which are used for retaining a crystallization temperature of a phase change material, second time of changing the resistance of the phase change memory from low to high and a second maximum current and a second minimum current which are used for retaining a fusion temperature of the phase change material; and B, when the phase change memory is set (SET), inputting a SET current, wherein the SET current is gradually increased from the first minimum current to the first maximum current within the first time and then is gradually decreased to 0; and when the phase change memory is reset (RESET), inputting a RESET current to the phase change memory, wherein the RESET current is gradually decreased from the second maximum current to the second minimum current and is switched off. With the adoption of the method disclosed by the invention, the power consumption of the phase change memory can be obviously reduced.

Description

A kind of method that realizes the phase transition storage low-power consumption
Technical field
The present invention relates to phase transition storage, particularly a kind of method that realizes the phase transition storage low-power consumption.
Background technology
Along with the develop rapidly of nanometer technology, it is more and more littler that the size of storer also becomes.Under the background that CMOS technology integrated level promotes, phase transition storage after late 1960s proposes, the swift and violent development of having got back.In numerous storeies, phase transition storage has embodied at a high speed, the characteristic of low pressure and low-power consumption.
The performance of phase transition storage mainly is that the phase-state change by reversible phase-change material determines, reaches two kinds of different electrical state of high resistant and low-resistance of material through realizing noncrystal realization with the polycrystal two states.Usually with amorphous state presentation logic " 1 ", crystalline state presentation logic " 0 " is stored data.
Write data to phase transition storage if desired; Promptly to make of the transformation of phase transition storage generation amorphous state to crystalline state; Or make phase transition storage generation crystalline state to amorphous transformation, and need import a set operation (SET) electric current to phase-change material, perhaps import operation (RESET) electric current of resetting.
Operate corresponding temperature requirement in order to satisfy SET operation and RESET, desirable be carried in power waveform on the phase transition storage shown in Fig. 1 a.Traditional method is that the SET and the RESET current waveform that utilize current mirror to produce shown in Fig. 2 a are realized corresponding power consumption demand.Shown in Fig. 2 a, no matter be SET electric current or RESET electric current, the time from initial time t20 to t22 or the process from t20 to t21, the current value I that heating part flows through aOr I bBe constant.Wherein, the SET electric current also has from t22 to t23 one to be reduced to 0 process gradually, and the RESET electric current then turn-offs rapidly at t21, reduces to 0.
Shown in Fig. 2 b, the resistance (R in the SET/RESET process of phase transition storage H/ R L) be to change along with change of time.Like this, the power consumption of generation is shown in Fig. 2 c: at resistance (R H/ R L) in the process that changes, the power of generation just correspondingly changes with resistance variations.
In order to satisfy resistance value under lower situation; Temperature still can reach the temperature of crystallization; Therefore choosing of constant current value can be bigger; The power that can reach with the low resistance resistance is that benchmark is chosen, and so just can guarantee no matter how resistance changes the temperature or the above temperature of fusing that can maintain more than the crystallization.
Visible by Fig. 2 c, when being become high resistant by low resistance, resistance value perhaps becomes low-resistance process from high resistance, and the power consumption that a part then can occur has just produced heat, and these power consumptions belong to redundant power consumption.And high resistance and low-resistance resistance in the rank that differs on the technological level of present stage more than 1000 times, so the redundant power that produces is also just very big.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of method that realizes the phase transition storage low-power consumption.
The invention provides a kind of method that realizes the phase transition storage low-power consumption; Comprise: A, the material of a phase transition storage is carried out electrical property detect, obtain: the resistance of this phase transition storage by high resistance to very first time that low resistance changes with keep first maximum current and first minimum current of phase-change material Tc; And the resistance of this phase transition storage is by second time and second maximum current and second minimum current of keeping phase-change material temperature of fusion of low resistance to the high resistance variation.
When B, execution set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to said first maximum current from said first minimum current gradually in the said very first time, be reduced to 0 gradually then; Carry out when resetting (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offed after said second maximum current reduces to said second minimum current gradually in said second time.
Preferably, said material to phase transition storage carries out electrical property and detects and to be: detect through the material of experiment to phase transition storage.
Preferably, in the steps A further with the very first time, first maximum current and first minimum current, substitution formula (1):
I＝I aa+k 1t (1)
Calculate the rate of rise k of SET electric current 1Wherein: Iaa substitution first minimum current, I substitution first maximum current, the t substitution very first time.
The electric current of SET described in the step B increases to said first maximum current from said first minimum current gradually in the said very first time: the rate of rise k that will calculate the SET electric current 1, initial current Iaa and current time t substitution formula (1); Obtain each current value I constantly; Said initial current Iaa is set to first minimum current.
Preferably, further detect the high resistance R of phase transition storage in the steps A HWith low-resistance value R LEstablishing the SET current maxima among the step B is Ia, then
I then AaWith I aProportionate relationship be greater than or equal to
Figure BDA0000136518710000031
Preferably, in the steps A further with second time, second maximum current and second minimum current, substitution formula (2):
I＝I b-k 2t (2)
Calculate the descending slope k of RESET electric current 2Wherein: I bSubstitution second maximum current, I substitution second minimum current, second time of t substitution.
The electric current of RESET described in the step B reduces to turn-off after said second minimum current from said second maximum current in said second time gradually: rate of rise k2, the second maximum current I that will calculate the RESET electric current bWith current time t substitution formula (2), obtain each current value I constantly; And when second time arrived, turn-off the RESET electric current.
Preferably, establishing the RESET current minimum among the step B is I Bb, then
I then BbWith I bProportionate relationship be greater than or equal to
Figure BDA0000136518710000032
Preferably; In the said steps A; The different fall time that further writes through change, with phase-change material during the different resistance value that forms note, resistance that satisfies needed maximum in the side circuit and minimum resistance are connected into straight line; Or get the wherein average line of numerical value, obtain the resistance variations slope k of phase transition storage in SET and RESET process rAnd k f
The resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R H-k rt (3)；
R＝R L+k ft (4)；
Among the said step B, with the resistance variations slope k of phase transition storage in SET and RESET process rAnd k f, high resistance R H, low-resistance value R LWith current time t difference substitution formula (3) and (4), obtain each resistance value R constantly in SET and the RESET process, draw power diagram in order to calculate each power constantly.
Visible by above-mentioned technical scheme; The method of this realization phase transition storage of the present invention low-power consumption; According to electrical property testing result to phase-change memory material, when carrying out the SET operation, the SET electric current to the phase transition storage input from little to big variation; When carrying out the RESET operation, the RESET electric current to the phase transition storage input from big to little variation.Because the present invention is the electrical property testing result according to phase-change memory material, to corresponding SET electric current and the RESET electric current that changes of phase transition storage input, facts have proved, compared with prior art obviously reduced power consumption.
Description of drawings
Fig. 1 is the ideal waveform figure of SET electric current and RESET current power;
Fig. 2 a is the oscillogram of prior art SET electric current and RESET electric current;
Fig. 2 b is the resistance variations figure of prior art phase transition storage in the SET/RESER process;
Fig. 2 c is the power diagram of prior art SET electric current and RESET electric current;
Fig. 3 a in the present invention's one preferred embodiment to the process flow diagram of SET current processing;
Fig. 3 b is to the process flow diagram of RESET current processing in Fig. 3 a illustrated embodiment;
Fig. 4 a is SET electric current and a RESET current waveform figure in Fig. 3 a illustrated embodiment;
Fig. 4 b is the resistance variations figure of phase transition storage in the SET/RESER process in Fig. 3 a illustrated embodiment;
Fig. 4 c is the power diagram of SET electric current and RESET electric current in Fig. 3 a illustrated embodiment;
Fig. 5 is the power of SET variable-current generation in Fig. 3 a illustrated embodiment and the power comparison diagram that the SET steady current produces;
Fig. 6 is the power of RESET variable-current generation in Fig. 3 a illustrated embodiment and the power comparison diagram that the RESET steady current produces.
Embodiment
Following with reference to the accompanying drawing specific embodiment that develops simultaneously, the present invention is elaborated.
The invention provides a kind of method that realizes the phase transition storage low-power consumption; This method comprises two aspects: at first; Material to the phase transition storage on the side circuit carries out the electrical property detection, obtains: the resistance of this phase transition storage is by the very first time and first maximum current and first minimum current of keeping phase-change material Tc of high resistance to the low resistance variation; And the resistance of this phase transition storage is by second time and second maximum current and second minimum current of keeping phase-change material temperature of fusion of low resistance to the high resistance variation.
Then, when carrying out set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to said first maximum current from said first minimum current gradually in the said very first time, be reduced to 0 gradually then; When carrying out replacement (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offed after said second maximum current reduces to said second minimum current gradually in said second time.
Below a specific embodiment of the present invention is elaborated.
In the present embodiment, at first the material of the phase transition storage of a side circuit is carried out electrical property and detects, obtained following parameter through concrete experiment:
1, the high resistance R of this phase transition storage HWith low resistance R L
2, the resistance of this phase transition storage is by high resistance R HTo low resistance R LThe very first time T that changes 1And keep the first maximum current I of phase-change material Tc 11With first minimum current I 12
3, the resistance of this phase transition storage is by low resistance R LTo high resistance R HSecond time T that changes 2And keep the second maximum current I of phase-change material temperature of fusion 21With second minimum current I 22
And,, calculated the rate of rise k of SET electric current through following mode 1, the RESET electric current descending slope k 2, and the resistance variations slope k of this phase transition storage in SET and RESET process rAnd k f
1, with very first time T 1, the first maximum current I 11With first minimum current I 12, substitution formula (1):
I＝I aa+k 1t (1)
Calculate the rate of rise k of SET electric current 1
Wherein: Iaa substitution first minimum current I 11, the I substitution first maximum current I 12, t substitution very first time T 1
2, with very first time T 2, the second maximum current I 21With second minimum current I 22, substitution formula (2):
I＝I b-k 2t (2)
Calculate the descending slope k of RESET electric current 2
Wherein: I bThe substitution second maximum current I 21, I substitution second minimum current I 22, t substitution second time T 2
3, detect the resistance variations slope k of this phase transition storage in SET and RESET process rAnd k f
The slope k of resistance variations rAnd k fNeed confirm through actual experiment; The different fall time that at first can write through change, with phase-change material during the different resistance value that forms note because resistance variations might not can be a straight line; But curve; But also it doesn't matter, can resistance that satisfy needed maximum in the side circuit and minimum resistance be connected into straight line, or get the wherein average line of numerical value; Just can become the slope curve of needed resistance variations among the present invention, promptly obtain the resistance variations slope k of this phase transition storage in SET and RESET process rAnd k fLike this, the resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R H-k rt (3)；
R＝R L+k ft (4)；
In the present embodiment, whether realized low-power consumption with checking, obtained the resistance variations slope k in SET and the RESET process in order to obtain following formula (5) and formula (6) and calculating SET and RESET power rAnd k fIn the practical application, need not checking for the phase transition storage of producing same circuits by batch and whether realized low-power consumption, only need to detect the rate of rise k that obtains the SET electric current 1Descending slope k with the RESET electric current 2Get final product.
In the practical application,, therefore to carry out the electrical property detection of phase transition storage respectively to different side circuits because the electrical property of phase transition storage is different in different side circuits.
In the present embodiment, shown in Fig. 3 a, after SET starts working, carry out following steps to the process of this phase transition storage input SET electric current:
Step 301, setting initial current I=I Aa, initial current I in this step AaBe set to first minimum current I 12, resistance value R is set to high resistance R H
Suppose that maximum SET electric current is I a(can be set to the first maximum current I 11), I then AaAnd I aProportionate relationship should satisfy formula (5)
I aa / I a > = R L R H - - - ( 5 )
Step 302, import current SET current value to phase transition storage.
The current value of input is exactly initial current value I for the first time Aa
Step 303, with the rate of rise k of SET electric current 1Adjustment is to the input current value of phase transition storage.
Promptly use formula (1) to calculate adjusted SET current value I.
I＝I aa+k 1t (1)
Step 304, judge that whether current SET current value I is more than or equal to maximum SET electric current I a, if then execution in step 305; Otherwise, return execution in step 302.
Step 305, the SET electric current is reduced to 0 gradually.
The realization and the prior art of this step are identical, repeat no more here.
Shown in Fig. 4 a, Fig. 4 b and Fig. 4 c.Suppose in the present embodiment, the resistance of phase transition storage in the process of SET from R H(such as 10M Ω) is to R L(such as 10K Ω) linear change, slope is Kr, and transformation period is from 0 to t32, and the variation function is R=R H-k rT.
At first the initial current value with the SET electric current is set at I Aa, so at initial time, corresponding phase transformation resistance is R H, can obtain initial power P through power calculation Min=I Aa 2R HAt this formed power of moment is can be so that temperature reaches the power of Tc.
With the slope k with the SET electric current then 1Speed rise to time t32 gradually, the variation function is formula (1), is increased to the t32 point when the time, when just resistance value reached minimum situation, current value was set at current value I a, obtain P=I through rating formula a 2R LAlso be can be at the formed power of this moment point so so that temperature reaches the power of Tc.That is to say I AaWith I aProportionate relationship should satisfy formula (5) and can maintain power on initial time and concluding time two points and can both reach the above power of Tc.In the process from t32 to t33, owing to phase transition storage is in the crystallization process, so the SET electric current is lowered slowly.
In order to obtain corresponding power relation accurately, according to P=I 2R joins concrete current values and the SET change in current time supposed, with each function expression substitution.The time shaft variable is changed from 0 to 500ns, and be step-length, set electric current I then with 1ns aValue be 1mA, initial high electric current R HBe 10M Ω, be reduced to low resistance R in 500ns time internal linear LBe 10K.
Through setting these variablees, can make a power function figure, as shown in Figure 5.The power function that in 500ns, produced for original steady current of the power function 1 of linear change wherein, the power function 2 of curvilinear motion then are the power functions that the SET electric current by above-mentioned linear change is produced.
Can find out on the power diagram that is produced by curvilinear motion SET electric current 2; The power that when initial time and concluding time, is produced is minimum, but this power is the lowest power that begins to set, and just can make the power of temperature maintenance at Tc point; Except these two time points; The power of remainder is all very high, but to compare original power all very little, and it is very big to differ multiple.So can find out from this Fig. 5, when guaranteeing to accomplish the SET operation, present embodiment has reached the purpose that reduces redundant power.
In the present embodiment, shown in Fig. 3 b, after RESET starts working, carry out following steps to the process of this phase transition storage input RESET electric current:
Step 306, setting initial current I=I b, initial current I in this step bBe set to the second maximum current I 21, resistance value R is set to low-resistance value R L
Suppose that minimum RESET electric current is I Bb, I then BbAnd I bProportionate relationship should satisfy formula (6)
I bb / I b > = R L R H - - - ( 6 )
Step 307, import current current value to phase transition storage.
The current value of input is exactly initial current value I for the first time b
Step 308, with the descending slope k of RESET electric current 2Adjustment is to the input current value of phase transition storage.
Promptly use formula (2) to calculate adjusted RESET current value I.
I＝I b-k 2t (2)
Step 309, judge that whether current RESET current value I is smaller or equal to minimum RESET electric current I Bb(can be set to second minimum current I 22), if then execution in step 310; Otherwise, return execution in step 307.
Step 310, the RESET electric current is turn-offed rapidly.
The realization and the prior art of this step are identical, repeat no more here.
Shown in Fig. 4 a, Fig. 4 b and Fig. 4 c.Suppose in the present embodiment, the resistance of phase transition storage in the process of RESET from R L(such as 10K Ω) is to R H(such as 10M Ω) linear change, slope is k f, transformation period is from 0 to t31, and the variation function is R=R L+ k fT.
At first the initial current value with RESET is set at I b, so at this time, corresponding phase transformation resistance is R L, can obtain P through power calculation Min=I b 2R LAt this formed power of moment is can be so that temperature reaches the power of temperature of fusion.
With the slope k with the RESET electric current then 2Speed drop to time t31 gradually, the variation function is I=I b-k 2T, when the time reached t31, just resistance value reached the highest situation, and current value is set at I Bb, obtain P through rating formula Min=I Bb 2R HAlso be can be at this formed power of moment so so that temperature reaches the power of temperature of fusion.That is to say I BbWith I bProportionate relationship should satisfy formula (6) and can maintain power on initial time and concluding time two points and can both reach the above power of temperature of fusion.
In the RESET EO because phase change resistor is in amorphous state and need temperature be lowered rapidly, so need be at the t31 place cut-off current rapidly, reached cool effect.
In order to obtain power relation accurately, can the transformation period of concrete current values and RESET be joined, each function expression is updated to horse-power formula P=I 2R.The transformation period of RESET being set at 50ns, and the time shaft variable is changed from 0 to 50ns, is step-length with 1ns.Set initial current I then bValue be 10mA, initial low resistance R LBe 10K Ω, rise to R in 50ns time internal linear HBe 10M Ω.
Through setting these variablees, it is as shown in Figure 6 to make a power function figure, and wherein the power function 1 of linear change is original steady current I bThe power function that is produced, the power function 2 of curvilinear motion then are the power functions that the RESET electric current by linear change is produced.
Power function curve 2 by the RESET electric current of linear change is produced can be found out; The power that when initial time and concluding time, is produced is minimum, but this power is the lowest power that begins to set, and just can make the power of temperature maintenance at fusing point; Except these two time points; The power of remainder is all very high, but to compare original power all very little, and it is very big to differ multiple.So the present invention has reduced redundant power under the prerequisite that guarantees the RESET operation.
Visible by the above embodiments, use the power consumption that phase transition storage can be obviously lowered in the present invention.

Claims (8)

1. a method that realizes the phase transition storage low-power consumption is characterized in that, comprising:
A, the material of a phase transition storage carried out electrical property detect, obtain:
The resistance of this phase transition storage is by the very first time and first maximum current and first minimum current of keeping phase-change material Tc of high resistance to the low resistance variation; And
The resistance of this phase transition storage is by second time and second maximum current and second minimum current of keeping phase-change material temperature of fusion of low resistance to the high resistance variation;
When B, execution set (SET) operation, to this phase transition storage input SET electric current, this SET electric current increases to said first maximum current from said first minimum current gradually in the said very first time, be reduced to 0 gradually then;
Carry out when resetting (RESET) operation, to this phase transition storage input RESET electric current, this RESET electric current turn-offed after said second maximum current reduces to said second minimum current gradually in said second time.
2. the method for claim 1 is characterized in that: said material to a phase transition storage carries out electrical property and detects and be: detect through the material of experiment to a phase transition storage.
3. the method for claim 1 is characterized in that: in the steps A further with the very first time, first maximum current and first minimum current, substitution formula (1):
I＝I aa+k 1t (1)
Calculate the rate of rise k of SET electric current 1
Wherein: Iaa substitution first minimum current, I substitution first maximum current, the t substitution very first time;
The electric current of SET described in the step B increases to said first maximum current from said first minimum current gradually in the said very first time:
With the rate of rise k that calculates the SET electric current 1, initial current Iaa and current time t substitution formula (1); Obtain each current value I constantly; Said initial current Iaa is set to first minimum current.
4. method as claimed in claim 3 is characterized in that: the high resistance R that further detects phase transition storage in the steps A HWith low-resistance value R L
Establishing the SET current maxima among the step B is Ia, then
I then AaWith I aProportionate relationship be greater than or equal to
Figure FDA0000136518700000021
5. method as claimed in claim 4 is characterized in that: in the steps A further with second time, second maximum current and second minimum current, substitution formula (2):
I＝I b-k 2t (2)
Calculate the descending slope k of RESET electric current 2
Wherein: I bSubstitution second maximum current, I substitution second minimum current, second time of t substitution;
The electric current of RESET described in the step B reduces to turn-off after said second minimum current from said second maximum current in said second time gradually:
With the rate of rise k2 that calculates the RESET electric current, the second maximum current I bWith current time t substitution formula (2), obtain each current value I constantly; And when second time arrived, turn-off the RESET electric current.
6. method as claimed in claim 5 is characterized in that:
Establishing the RESET current minimum among the step B is I Bb, then
I then BbWith I bProportionate relationship be greater than or equal to
Figure FDA0000136518700000022
7. method as claimed in claim 6; It is characterized in that: in the said steps A; The different fall time that further writes through change, with this phase-change material during the different resistance value that forms note, resistance that satisfies needed maximum in the side circuit and minimum resistance are connected into straight line; Or get the wherein average line of numerical value, obtain the resistance variations slope k of phase transition storage in SET and RESET process rAnd k f
The resistance variations curve of phase transition storage in SET and RESET process is respectively formula (3) and formula (4):
R＝R H-k rt (3)；
R＝R L+k ft (4)。
8. method as claimed in claim 7 is characterized in that: among the said step B, with the resistance variations slope k of phase transition storage in SET and RESET process rAnd k f, high resistance R H, low-resistance value R LWith current time t difference substitution formula (3) and (4), obtain each resistance value R constantly in SET and the RESET process, draw power diagram in order to calculate each power constantly.
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CN104882161A (en) * 2014-02-28 2015-09-02 复旦大学 Resistive random access memory and write operation method thereof
CN108597558A (en) * 2018-04-23 2018-09-28 中国科学院上海微系统与信息技术研究所 It is preferred that the system and method for phase transition storage write-operation current
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CN1610951A (en) * 2001-12-28 2005-04-27 英特尔公司 Method and apparatus to program a phase change memory
CN1588664A (en) * 2004-08-06 2005-03-02 中国科学院上海微系统与信息技术研究所 Characterization emthod for convertable phase change material electric property
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CN104882161A (en) * 2014-02-28 2015-09-02 复旦大学 Resistive random access memory and write operation method thereof
CN104882161B (en) * 2014-02-28 2017-07-11 复旦大学 A kind of resistor-type random-access memory and its write operation method
CN108597558A (en) * 2018-04-23 2018-09-28 中国科学院上海微系统与信息技术研究所 It is preferred that the system and method for phase transition storage write-operation current
CN108597558B (en) * 2018-04-23 2020-10-20 中国科学院上海微系统与信息技术研究所 System and method for optimizing write operation current of phase change memory
WO2021181173A1 (en) * 2020-03-13 2021-09-16 International Business Machines Corporation Phase change memory having gradual reset
GB2609776A (en) * 2020-03-13 2023-02-15 Ibm Phase change memory having gradual reset

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