CN102539092A - 检测mocvd反应系统情况的方法 - Google Patents
检测mocvd反应系统情况的方法 Download PDFInfo
- Publication number
- CN102539092A CN102539092A CN2010106197528A CN201010619752A CN102539092A CN 102539092 A CN102539092 A CN 102539092A CN 2010106197528 A CN2010106197528 A CN 2010106197528A CN 201010619752 A CN201010619752 A CN 201010619752A CN 102539092 A CN102539092 A CN 102539092A
- Authority
- CN
- China
- Prior art keywords
- mocvd
- reactive system
- reaction chamber
- situation
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010619752.8A CN102539092B (zh) | 2010-12-29 | 2010-12-29 | 检测mocvd反应系统情况的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010619752.8A CN102539092B (zh) | 2010-12-29 | 2010-12-29 | 检测mocvd反应系统情况的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102539092A true CN102539092A (zh) | 2012-07-04 |
CN102539092B CN102539092B (zh) | 2014-08-27 |
Family
ID=46346537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010619752.8A Active CN102539092B (zh) | 2010-12-29 | 2010-12-29 | 检测mocvd反应系统情况的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102539092B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1319146A (zh) * | 1998-04-20 | 2001-10-24 | 东京电子有限公司 | 化学气相沉积室钝化方法 |
US20070020903A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Hybrid PVD-CVD system |
US20070167007A1 (en) * | 2006-01-18 | 2007-07-19 | Macronix International Co., Ltd. | Methods for symmetric deposition of a metal layer in the fabrication of a semiconductor device |
CN101281076A (zh) * | 2007-04-06 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | 一种自动检查气相沉积设备反应腔是否漏气的方法 |
CN101736310A (zh) * | 2008-11-13 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 应用于钨化学气相沉积工艺的气体传输系统 |
CN101881687A (zh) * | 2010-05-28 | 2010-11-10 | 上海宏力半导体制造有限公司 | 半导体制造平台的泄漏检测装置、其使用方法及其平台 |
-
2010
- 2010-12-29 CN CN201010619752.8A patent/CN102539092B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1319146A (zh) * | 1998-04-20 | 2001-10-24 | 东京电子有限公司 | 化学气相沉积室钝化方法 |
US20070020903A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Hybrid PVD-CVD system |
US20070167007A1 (en) * | 2006-01-18 | 2007-07-19 | Macronix International Co., Ltd. | Methods for symmetric deposition of a metal layer in the fabrication of a semiconductor device |
CN101281076A (zh) * | 2007-04-06 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | 一种自动检查气相沉积设备反应腔是否漏气的方法 |
CN101736310A (zh) * | 2008-11-13 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 应用于钨化学气相沉积工艺的气体传输系统 |
CN101881687A (zh) * | 2010-05-28 | 2010-11-10 | 上海宏力半导体制造有限公司 | 半导体制造平台的泄漏检测装置、其使用方法及其平台 |
Also Published As
Publication number | Publication date |
---|---|
CN102539092B (zh) | 2014-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI825319B (zh) | 氣相反應器系統 | |
US10663336B2 (en) | Processing chamber gas detection system and operation method thereof | |
US10502651B2 (en) | Creating a mini environment for gas analysis | |
US7165443B2 (en) | Vacuum leakage detecting device for use in semiconductor manufacturing system | |
CN102539092B (zh) | 检测mocvd反应系统情况的方法 | |
TWI621193B (zh) | 製程腔室氣體偵測系統及其操作方法 | |
CN110542518B (zh) | 一种胶粘组合件密封性能测试方法和设备 | |
CN101281076A (zh) | 一种自动检查气相沉积设备反应腔是否漏气的方法 | |
CN111599706A (zh) | 在线侦测腔体漏率的方法、半导体工艺机台 | |
CN105390363A (zh) | 一种高密度等离子体机台的管路装置 | |
CN111579172B (zh) | 反应腔室泄漏监测方法以及装置、半导体设备系统 | |
CN104425301B (zh) | 一种监测光刻胶粘结层hmds异常的方法 | |
US20230273532A1 (en) | Exhaust gas monitor for photoresist adhesion control | |
JP2001214888A (ja) | 真空排気装置及び方法 | |
US11788923B2 (en) | Method for detecting gas tightness of furnace tube device | |
US6985222B2 (en) | Chamber leakage detection by measurement of reflectivity of oxidized thin film | |
KR100932118B1 (ko) | 반도체 제조설비의 진공 시스템 | |
JP2004363522A (ja) | 半導体製造装置および半導体装置の製造方法 | |
Knechtel | Characterization and qualification of wafer-bonded MEMS devices | |
CN115683482A (zh) | 一种腔室漏率检测方法和一种集簇式半导体工艺设备 | |
CN117423629A (zh) | 一种晶圆背面残存膜质检测方法及检测装置 | |
KR20050066757A (ko) | 반도체 제조 설비용 진공 장치 | |
JP2005175122A (ja) | 半導体製造装置及び半導体装置の製造方法 | |
TW200809953A (en) | Gas pipe design used in the connection of high-density plasma apparatus | |
KR20060018048A (ko) | 반도체 제조설비의 개스리크 감지장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130619 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130619 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130619 Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |