CN102534713A - Electroplating machine annealing chamber gas pipeline - Google Patents
Electroplating machine annealing chamber gas pipeline Download PDFInfo
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- CN102534713A CN102534713A CN2012100487668A CN201210048766A CN102534713A CN 102534713 A CN102534713 A CN 102534713A CN 2012100487668 A CN2012100487668 A CN 2012100487668A CN 201210048766 A CN201210048766 A CN 201210048766A CN 102534713 A CN102534713 A CN 102534713A
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Abstract
The invention provides an electroplating machine annealing chamber gas pipeline which comprises a plurality of annealing chambers and a gas main pipeline, wherein the gas main pipeline is connected with the annealing chambers through a plurality of gas branched pipelines; and the joint of each gas branched pipeline and the gas main pipeline is provided with a mass flowmeter. The mass flowmeters leading to the annealing chambers are added to the gas pipeline of the original annealing module to accurately control the ratio of gas leading to each chamber, so that the physical properties of the annealed copper film approach to conformity, thereby bringing about stable metallic copper interconnection lines.
Description
Technical field
The present invention relates to SIC and make the field, and be particularly related to a kind of plating board anneal chamber gas piping.
Background technology
Along with the continuous progress of integrated circuit fabrication process, the improving constantly of chip integration, copper-connection has replaced the main flow interconnection technique of aluminium interconnection becoming VLSI in making.As the surrogate of aluminium, copper conductor can improve the integrated level of chip, improves device density, improves clock requency and reduces power consumption and cost.
The electro-coppering board of main flow mainly is made up of three modules now, electroplates module, side washing module and annealing module.The module of wherein annealing is that the copper film after electroplating is heat-treated, and main effect is the regrowth of copper crystal grain, discharges stress and reduces resistivity, guarantees to obtain the stable copper film of physical property.Annealing module after copper is electroplated generally can be connected with heat transfer gas (being generally helium), reducing gas (be generally hydrogen, hydrogen itself also is heat transfer gas) and Purge gas (nitrogen).
The annealing modular gas piping plan design of present a certain electro-coppering main flow equipment is illustrated in fig. 1 shown below:
Its pipeline on gas main 10, be equipped with mass flowmeter (mass flow controller, MFC) 20, then from gas piping 10 is led to up the module in annealing from the bottom up, through cavity 31,32,33,34,35.Such pipeline structure; When the molecular weight of gas is more or less the same in pipeline is suitable; If but the molecular weight gas in the pipeline differs bigger; Such design can cause, cloth many more that molecular weight ratio is less toward top, and this situation is particularly evident when number of cavities is more and more.To cause like this annealing in the module, the gas ratio in the different cavitys is a difference to some extent, and this will finally show on the copper film after annealing.Be that cavity is got over up, it is many more that heat-conducting gas distributes, and that anneals and carry out like this is also abundant more, and the stress after causing annealing is big more, and so just feasible copper thin film physics characteristic of from different cavitys, coming out is difference to some extent.Because the interconnected number of plies of copper cash of logic chip is many in the semi-conductor, the product that has might reach more than 10 layers, so might bring storage effect, stress is exaggerated and causes fragment or stress migration aspect problem.
In sum; Existing plating equipment annealing module; The defective of gas piping design aspect will be brought the difference of annealing back copper film properties; And along with the continuous propelling with technology node that increases of the interconnection number of plies, this difference also can be exaggerated, and possibly bring the stress migration of copper-connection to lose efficacy in the time of serious.
Summary of the invention
The present invention proposes a kind of plating board anneal chamber gas piping; Through in the gas piping of original annealing module, increasing the mass flowmeter that leads to each anneal chamber; Come accurately control to lead to the gas ratio of each cavity; Thereby the copper thin film physics character after the annealing is reached unanimity, bring stable metallic copper interconnection line.
In order to achieve the above object, the present invention proposes a kind of plating board anneal chamber gas piping, comprising:
A plurality of anneal chamber;
The gas main road is connected in said a plurality of anneal chamber through a plurality of gas branch pipelines, wherein,
Said each gas branch pipeline and junction, gas main road are provided with mass flowmeter.
Further, the quantity of said anneal chamber is 2 to 10.
Further, said gas main road delivering gas is heat transfer gas, reducing gas and Purge gas.
Further, said heat transfer gas is a helium, and said reducing gas is a hydrogen, and said Purge gas is a nitrogen.
Further, be provided with mass flowmeter equally on the said gas main road.
The present invention proposes a kind of plating board anneal chamber gas piping; Through in the gas piping of original annealing module, increasing the mass flowmeter that leads to each anneal chamber, come accurately control to lead to the gas ratio of each cavity, through optimization design to plating after annealing module; Gas content in the annealing process is controlled accurately; Thereby control the characteristic of copper film accurately, obtain our needed consistence and the excellent copper film of physical property at last, reduce potential stress defective.
Description of drawings
Shown in Figure 1 is the annealing modular gas piping plan of electro-coppering main flow equipment in the prior art.
Fig. 2 is said for the plating board anneal chamber gas piping structure figure of the present invention's first preferred embodiment.
Fig. 3 is said for the plating board anneal chamber gas piping structure figure of the present invention's second preferred embodiment.
Embodiment
In order more to understand technology contents of the present invention, special act specific embodiment also cooperates appended graphic explanation following.
The present invention reaches independent and accurate effect of regulating process parameter through the independence control to each anneal chamber gas flow; Thereby reduce the influence of potential stress migration; The metal copper film that brings characteristic one to make peace stable; Please refer to Fig. 2, Fig. 2 is said for the plating board anneal chamber gas piping structure figure of the present invention's first preferred embodiment.The present invention proposes a kind of plating board anneal chamber gas piping, comprising: a plurality of anneal chamber 300; Gas main road 100 is connected in said a plurality of anneal chamber 300 through a plurality of gas branch pipelines 400, and wherein, said each gas branch pipeline 400 is provided with mass flowmeter 200 with 100 junctions, gas main road.
The preferred embodiment according to the present invention; The quantity of said anneal chamber is 2 to 10, and the quantity that present embodiment adopts is 5 anneal chamber 310,320,330,340,350, and said gas main road 100 delivering gas are heat transfer gas, reducing gas and Purge gas; Further; Said heat transfer gas is a helium, and said reducing gas is a hydrogen, and said Purge gas is a nitrogen.
The preferred embodiment according to the present invention is provided with mass flowmeter 200 on the said gas main road 100 equally, reaches gas main road 100 and all is provided with mass flowmeter 200 with gas branch line 400, realizes the control respectively to the cavity gas flow.
Please refer to Fig. 3 again, Fig. 3 is said to be the plating board anneal chamber gas piping structure figure of the present invention's second preferred embodiment.Pattern is erect in stack for the design of anneal chamber can be as shown in Figure 2; Also can adopt the form of tiling shown in Figure 3; Gas piping also can be designed to gas main road 100 and all be provided with mass flowmeter 200 with gas branch line 400 under this design conditions equally, perhaps only is provided with mass flowmeter 200 at gas branch pipeline 400.
In sum; The present invention proposes a kind of plating board anneal chamber gas piping; Through in the gas piping of original annealing module, increasing the mass flowmeter that leads to each anneal chamber, come accurately control to lead to the gas ratio of each cavity, through optimization design to plating after annealing module; Gas content in the annealing process is controlled accurately; Thereby control the characteristic of copper film accurately, obtain our needed consistence and the excellent copper film of physical property at last, reduce potential stress defective.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (5)
1. electroplate board anneal chamber gas piping for one kind, it is characterized in that, comprising:
A plurality of anneal chamber;
The gas main road is connected in said a plurality of anneal chamber through a plurality of gas branch pipelines, wherein,
Said each gas branch pipeline and junction, gas main road are provided with mass flowmeter.
2. plating board anneal chamber gas piping according to claim 1 is characterized in that the quantity of said anneal chamber is 2 to 10.
3. plating board anneal chamber gas piping according to claim 1 is characterized in that said gas main road delivering gas is heat transfer gas, reducing gas and Purge gas.
4. plating board anneal chamber gas piping according to claim 3 is characterized in that said heat transfer gas is a helium, and said reducing gas is a hydrogen, and said Purge gas is a nitrogen.
5. plating board anneal chamber gas piping according to claim 1 is characterized in that said gas main is provided with mass flowmeter on the road equally.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100487668A CN102534713A (en) | 2012-02-28 | 2012-02-28 | Electroplating machine annealing chamber gas pipeline |
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| CN2012100487668A CN102534713A (en) | 2012-02-28 | 2012-02-28 | Electroplating machine annealing chamber gas pipeline |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016033997A (en) * | 2014-07-31 | 2016-03-10 | 株式会社ニューフレアテクノロジー | Vapor growth device and vapor growth method |
| JP2016092311A (en) * | 2014-11-07 | 2016-05-23 | 株式会社ニューフレアテクノロジー | Vapor growth device and vapor growth method |
| CN112410518A (en) * | 2019-08-23 | 2021-02-26 | 盛美半导体设备(上海)股份有限公司 | Air inlet device of annealing cavity |
| CN112410693A (en) * | 2019-08-23 | 2021-02-26 | 盛美半导体设备(上海)股份有限公司 | Air inlet device of annealing cavity |
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| JPS51128610A (en) * | 1975-05-02 | 1976-11-09 | Nippon Steel Corp | A method for reduction of steel strips in reduction furnace of continu ous heat treatment lines for steel plates for plating |
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| CN201562667U (en) * | 2009-08-04 | 2010-08-25 | 中芯国际集成电路制造(上海)有限公司 | Annealing device |
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- 2012-02-28 CN CN2012100487668A patent/CN102534713A/en active Pending
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| JPS51128610A (en) * | 1975-05-02 | 1976-11-09 | Nippon Steel Corp | A method for reduction of steel strips in reduction furnace of continu ous heat treatment lines for steel plates for plating |
| JPH0945628A (en) * | 1995-07-28 | 1997-02-14 | Nec Corp | Semiconductor processing equipment |
| JPH10158843A (en) * | 1996-12-06 | 1998-06-16 | Furukawa Electric Co Ltd:The | Vapor phase growth system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016033997A (en) * | 2014-07-31 | 2016-03-10 | 株式会社ニューフレアテクノロジー | Vapor growth device and vapor growth method |
| US10132001B2 (en) | 2014-07-31 | 2018-11-20 | Nuflare Technology, Inc. | Vapor phase growth apparatus and vapor phase growth method |
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| CN112410518A (en) * | 2019-08-23 | 2021-02-26 | 盛美半导体设备(上海)股份有限公司 | Air inlet device of annealing cavity |
| CN112410693A (en) * | 2019-08-23 | 2021-02-26 | 盛美半导体设备(上海)股份有限公司 | Air inlet device of annealing cavity |
| CN112410693B (en) * | 2019-08-23 | 2023-11-03 | 盛美半导体设备(上海)股份有限公司 | Annealing chamber air inlet device |
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Application publication date: 20120704 |