CN102532904B - Organic silicon heat radiation material and preparation method thereof - Google Patents

Organic silicon heat radiation material and preparation method thereof Download PDF

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Publication number
CN102532904B
CN102532904B CN 201110447227 CN201110447227A CN102532904B CN 102532904 B CN102532904 B CN 102532904B CN 201110447227 CN201110447227 CN 201110447227 CN 201110447227 A CN201110447227 A CN 201110447227A CN 102532904 B CN102532904 B CN 102532904B
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China
Prior art keywords
parts
heat radiation
preparation
organic silicon
radiation material
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Expired - Fee Related
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CN 201110447227
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Chinese (zh)
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CN102532904A (en
Inventor
王红玉
王建斌
陈田安
解海华
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Yantai Darbond Technology Co Ltd
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Yantai Darbond Technology Co Ltd
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Priority to CN 201110447227 priority Critical patent/CN102532904B/en
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Abstract

The invention relates to a paste organic silicon heat radiation material and a preparation method of the paste organic silicon heat radiation material. The heat radiation material comprises the following ingredients in parts by weight: 100 parts of simethicone, 2 to 10 parts of wetting agents, 5 to 15 parts of gas-phase silicon dioxide, 400 to 700 parts of alumina, 100 to 120 parts of aluminium hydroxide, 20 to 40 parts of melamine and 80 to 120 parts of aluminum nitride. The on-site operation is realized, the operability and the plasticity are good, and in addition, the hand sticking is avoided.

Description

A kind of organic silicon heat radiation material and preparation method thereof
Technical field
The present invention relates to a kind of hot material, especially relate to a kind of organosilicon in paste form heat sink material for filling between electronic package and the scatterer.
Background technology
Along with the generally application of high-power electronic component, heat radiation more and more becomes the important factor that affects product life.These elements constantly gather heat in long-time use procedure, if the heat that produces in time can not be derived, will greatly shorten the life-span of these devices, and then affect the life-span of product.Paste heat sink material wettability is good, and thermal resistance is little, and good heat dissipation effect is easy to use, more and more is applied in heater members and the radiating element.
In some application scenarios, site operation requires good operability, and product is tack-free, also needs good plasticity.
Summary of the invention
Technical problem to be solved by this invention provides a kind of organosilicon in paste form heat sink material, the paste heat sink material can conveniently be filled the slit between electronic package and the scatterer, and on-site construction operations, wettability, plasticity are good, and product is tack-free, thermal resistance is little, good heat dissipation effect.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of organic silicon heat radiation material comprises each raw material of following weight part: 100 parts of dimethyl silicone oils, 2~10 parts of wetting agents, 5~15 parts of aerosils, 400~700 parts in aluminum oxide, 100~120 parts of aluminium hydroxide parts, 20~40 parts of trimeric cyanamides, 80~120 parts of aluminium nitride.
Described wetting agent is γ-(2,3-epoxy the third oxygen) propyl trimethoxy silicane, adds wetting agent and can effectively reduce the product thermal resistance.
The invention has the beneficial effects as follows: the organosilicon in paste form heat sink material can be used for filling the slit between electronic package and the scatterer, plays adhesive effect, itself has certain hardness, flowability, tension type and tack-free, good operability.
The present invention also provides a kind of preparation method of organic silicon heat radiation material, may further comprise the steps: (1) joins dimethyl silicone oil 100 parts of (parts by weight), aluminum oxide 400~700 parts of (parts by weight), aluminium hydroxide 100~120 parts of (parts by weight), trimeric cyanamide 20~40 parts of (parts by weight), aluminium nitride 80~120 parts (parts by weight) in the stirring tank and stirs, stir and vacuumize after 2 hours, vacuum tightness is less than-0.9Kg/cm 2, wherein whipping temp is 100~120 ℃, churning time 4 hours, and mixing speed is 300rpm~500rpm; (2) be cooled to room temperature, add aerosil and wetting agent after stirring, stir, obtain the paste material, wherein churning time is 30 minutes, and mixing speed is 600rpm~1000rpm.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
Embodiment 1
Pressing dimethyl-silicon weight of oil 100 calculates for unit
With 100 parts of dimethyl silicone oils, 400 parts in aluminum oxide, 80 parts of aluminium nitride, 100 parts in aluminium hydroxide, 20 parts of trimeric cyanamides, join in the stirring tank 100~120 ℃ of lower stirrings 4 hours, vacuumize, rotating speed is 300rpm.Cool to room temperature adds 2 parts of 5 parts of aerosils and wetting agents after stirring, stirred 30 minutes, and rotating speed is 600rpm; Obtain paste material.
Embodiment 2
Pressing dimethyl-silicon weight of oil 100 calculates for unit
With 100 parts of dimethyl silicone oils, 525 parts in aluminum oxide, 100 parts of aluminium nitride, 100 parts in aluminium hydroxide, 25 parts of trimeric cyanamides, join in the stirring tank 100~120 ℃ of lower stirrings 4 hours, stir and vacuumize after 2 hours, rotating speed is 500rpm.Cool to room temperature adds 7 parts of 10 parts of aerosils and wetting agents after stirring, stirred 30 minutes, and rotating speed is 1000rpm; Obtain paste material.
Embodiment 3
Pressing dimethyl-silicon weight of oil 100 calculates for unit
With 100 parts of dimethyl silicone oils, 650 parts in aluminum oxide, 122 parts of aluminium nitride, 108 parts in aluminium hydroxide, 40 parts of trimeric cyanamides, join in the stirring tank 100~120 ℃ of lower stirrings 4 hours, vacuumize, rotating speed is 400rpm.Cool to room temperature adds 10 parts of 15 parts of aerosils and wetting agents after stirring, stirred 30 minutes, and rotating speed is 700rpm; Obtain paste material.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. organic silicon heat radiation material, it is characterized in that, comprise each raw material of following parts by weight: 100 parts of dimethyl silicone oils, 2~10 parts of wetting agents, 5~15 parts of aerosils, 400~700 parts in aluminum oxide, 100~120 parts in aluminium hydroxide, 20~40 parts of trimeric cyanamides, 80~120 parts of aluminium nitride.
2. organic silicon heat radiation material according to claim 1 is characterized in that, described wetting agent is γ-(2,3-epoxy the third oxygen) propyl trimethoxy silicane.
3. the preparation method of an organic silicon heat radiation material is characterized in that, may further comprise the steps:
(1) dimethyl silicone oil 100 weight parts, aluminum oxide 400~700 weight parts, aluminium hydroxide 100~120 weight parts, trimeric cyanamide 20~40 weight parts, aluminium nitride 80~120 weight parts are joined in the stirring tank and stir, vacuumize;
(2) be cooled to room temperature, add aerosil 5~15 weight parts and wetting agent 2~10 weight parts after stirring, stir, obtain paste material.
4. preparation method according to claim 3 is characterized in that, the described whipping temp of step (1) is 100~120 ℃, churning time 4 hours, and mixing speed is 300rpm~500rpm.
5. preparation method according to claim 3 is characterized in that, the described churning time of step (2) is 30 minutes, and mixing speed is 600rpm~1000rpm.
6. according to claim 3 to 5 each described preparation methods, it is characterized in that the described vacuum tightness that vacuumizes of step (1) is for less than-0.9Kg/cm 2
CN 201110447227 2011-12-28 2011-12-28 Organic silicon heat radiation material and preparation method thereof Expired - Fee Related CN102532904B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110447227 CN102532904B (en) 2011-12-28 2011-12-28 Organic silicon heat radiation material and preparation method thereof

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Application Number Priority Date Filing Date Title
CN 201110447227 CN102532904B (en) 2011-12-28 2011-12-28 Organic silicon heat radiation material and preparation method thereof

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CN102532904A CN102532904A (en) 2012-07-04
CN102532904B true CN102532904B (en) 2013-04-24

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107442658A (en) * 2017-06-20 2017-12-08 太仓市兴港金属材料有限公司 A kind of preparation technology of high-efficiency radiator
CN115058232A (en) * 2022-06-09 2022-09-16 昆山纳诺新材料科技有限公司 Preparation method of low-cost heat-conducting paste

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610725A (en) * 2001-12-27 2005-04-27 英特尔公司 Chain extension for thermal materials
CN1986643A (en) * 2005-12-23 2007-06-27 富准精密工业(深圳)有限公司 Silicone grease composition
CN101928461A (en) * 2010-08-10 2010-12-29 席俊峰 Heat-conducting material
CN102181271A (en) * 2011-01-24 2011-09-14 重庆大学 Binary mixed nano heat-conducting silicone grease for heat dissipation of high-power LED (light-emitting diode) lamp and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101044207A (en) * 2004-10-18 2007-09-26 株式会社日本矿油 Silicone composition for heat dissipation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610725A (en) * 2001-12-27 2005-04-27 英特尔公司 Chain extension for thermal materials
CN1986643A (en) * 2005-12-23 2007-06-27 富准精密工业(深圳)有限公司 Silicone grease composition
CN101928461A (en) * 2010-08-10 2010-12-29 席俊峰 Heat-conducting material
CN102181271A (en) * 2011-01-24 2011-09-14 重庆大学 Binary mixed nano heat-conducting silicone grease for heat dissipation of high-power LED (light-emitting diode) lamp and preparation method thereof

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Application publication date: 20120704

Assignee: Yantai Debang Advanced Silicon Materials Co.,Ltd.

Assignor: Yantai Darbond Technology Co., Ltd.

Contract record no.: 2013370000195

Denomination of invention: Organic silicon heat radiation material and preparation method thereof

Granted publication date: 20130424

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Record date: 20130822

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