CN102531581A - Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof - Google Patents

Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof Download PDF

Info

Publication number
CN102531581A
CN102531581A CN2011104571501A CN201110457150A CN102531581A CN 102531581 A CN102531581 A CN 102531581A CN 2011104571501 A CN2011104571501 A CN 2011104571501A CN 201110457150 A CN201110457150 A CN 201110457150A CN 102531581 A CN102531581 A CN 102531581A
Authority
CN
China
Prior art keywords
microwave
medium
value
dielectric constant
tio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011104571501A
Other languages
Chinese (zh)
Other versions
CN102531581B (en
Inventor
黄丹
许赛卿
唐春宝
谭金刚
张斌
易祖阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiaxing Jiali Electronic Co., Ltd.
Original Assignee
JIAXING JIALI ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIAXING JIALI ELECTRONIC CO Ltd filed Critical JIAXING JIALI ELECTRONIC CO Ltd
Priority to CN201110457150.1A priority Critical patent/CN102531581B/en
Publication of CN102531581A publication Critical patent/CN102531581A/en
Application granted granted Critical
Publication of CN102531581B publication Critical patent/CN102531581B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention belongs to the technical field of material science and more particularly relates to a microwave dielectric ceramic with an intermediate dielectric constant and a high Q value and a preparation method thereof. The expression formula of the microwave dielectric ceramic with the intermediate dielectric constant and the high Q value is as follows: xCaasr1-aTiO3-(1-x)SmbY(1-b)AlO3+y wt% of BO, wherein BO is one or mixture of more of MnO2, WO3, CeO2, Nb2O5, TiO2, Fe2O3 and Ta2O3; x is more than or equal to 0.6 and is less than or equal to 0.8, a is more than or equal to 0.01 and is less than or equal to 0.2, b is more than or equal to 0.4 and less than or equal to 1, and y is more than or equal to 0 and is less than or equal to 3. The microwave dielectric ceramic provided by the invention has the characteristics of intermediate dielectric constant, high Q value, adjustable temperature coefficient of resonance frequency and the like; the dielectric constant is 42-50 and the Qf value is 30000-40000 GHz; the serialization of the temperature coefficient of the resonance frequency can be realized and Tf is more than or equal to -10 and is less than or equal to +10 ppm, so that the microwave dielectric ceramic provided by the invention can be used for manufacturing microwave frequency devices with high powder and high stability, including a filter, a duplexer, a combiner and the like. Therefore, the microwave dielectric ceramic with the intermediate dielectric constant and the high Q value and the preparation method thereof, provided by the invention, have a great application value in industry.

Description

The high Q value of a kind of medium dielectric constant microwave medium microwave-medium ceramics and preparation method thereof
Technical field
The invention belongs to materials science field, relate in particular to the high Q value of a kind of medium dielectric constant microwave medium microwave-medium ceramics and preparation method thereof.
Background technology
Microwave-medium ceramics is one type and is applied to microwave frequency band (300MHz～300GHz), in Circuits System, bring into play the pottery of a series of circuit functions such as media isolated, Medium Wave Guide and dielectric resonance.The resonator, wave filter, antenna, the duplexer equifrequent device that make with microwave-medium ceramics can be widely used in various fields such as radio communication, satellite-signal reception, various radar system, global satellite-signal navigationsystem; The tremendous development of communication base station, digital TV receiving system etc. in recent years particularly, centering dielectric constant and high Q value microwave-medium ceramics demand is increasing, and also have higher requirement simultaneously: specific inductivity should be bigger, to reduce the size of devices size; The Qf value should be high more good more, to reduce the dielectric loss of microwave device; Temperature coefficient of resonance frequency is answered seriation, to satisfy the variant prodn demand, reaches the stability of product with the temperature variation performance.
At present, the high Q value of reported medium dielectric constant microwave medium microwave dielectric material system and dielectric properties are following: (1) BaTi 4O 9, ε r≈ 38, Qf=30000～40000GHz, τ f ≈+14ppm/ ℃; (2) Ba 2Ti 9O 20, ε r≈ 39, Qf=32000～40000GHz, τ f ≈ 4ppm/ ℃; (3) (Zr, Sn) TiO 4, ε r≈ 37～39, Qf=32000～40000GHz, τ f ≈-4～+ 12ppm/ ℃.Above-mentioned materials ε rAll below 40, in order to prepare ε rGreater than 40, high Q value microwave dielectric ceramic materials, the present invention selects big specific inductivity (Ca, Sr) TiO for use 3Material and high Q value (Sm, Y) AlO 3Material carries out compound, successfully prepares ε rThe high Q value of=42～50 medium dielectric constant microwave medium microwave dielectric material.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, a purpose that provides provides and a kind of specific inductivity is 42～50, high Q value, the high Q value of medium dielectric constant microwave medium microwave-medium ceramics that temperature coefficient of resonance frequency is adjustable.Another object of the present invention provides a kind of preparation method of the above-mentioned high Q value of medium dielectric constant microwave medium microwave-medium ceramics.
In order to realize first above-mentioned purpose, the technical scheme that the present invention adopted is following:
The high Q value of a kind of medium dielectric constant microwave medium microwave-medium ceramics, the composition of raw materials expression formula of this microwave-medium ceramics is: xCa aSr 1-aTiO 3+ (1-x) Sm bY (1-b)AlO 3+ ywt%BO; Wherein,
0.6≤x≤0.8；
0.01≤a≤0.3；
0.4≤b≤1；
0≤y≤3, y is for accounting for xCaTi aO 3+ (1-x) Sm bY (1-b)AlO 3Mass percent;
Said BO is MnO 2, WO 3, CeO 2, Nb 2O 5, TiO 2, Fe 2O 3, Ta 2O 3In one or more mix.
As preferably, 0.68≤x in the composition of raw materials of above-mentioned microwave-medium ceramics≤0.75; 0.01≤a≤0.2; 0.6≤b≤0.9; 0≤y≤1.
Remake to preferably 0.01≤a in the composition of raw materials of above-mentioned microwave-medium ceramics≤0.05; 0.6≤b≤0.8; 0≤y≤0.7.
In order to realize second above-mentioned purpose, the technical scheme that the present invention adopted is following:
The high Q value of above-mentioned medium dielectric constant microwave medium microwave-medium ceramics preparation method, this method be successively as follows:
1) with starting material CaCO 3, SrCO 3, TiO 2, Sm 2O 3, Y 2O 3And Al 2O 3Heat-treated 2 hours at 400 ℃～1000 ℃;
2) with CaCO 3, SrCO 3, TiO 2Press Ca aSr 1-aTiO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1100～1200 ℃, and pre-burning is 2.5～3.5 hours in the air atmosphere, synthetic Ca aSr 1-aTiO 3
3) with Sm 2O 3, Y 2O 3And Al 2O 3Press Sm bY (1-b)AlO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1150～1300 ℃, and pre-burning is 2.5～3.5 hours in the air atmosphere, synthetic Sm bY (1-b)AlO 3
4) with synthetic Ca aSr 1-aTiO 3, Sm bY (1-b)AlO 3Press described prescription second batch with starting material BO, mixed 18～30 hours, obtain porcelain after the oven dry with the wet ball-milling method; Add the granulation of 5wt% poly (vinyl alcohol) binder to this porcelain, at 4～6MPa pressure pressed disk, at 1400～1500 ℃, sintering is 3～8 hours in the air atmosphere, obtains the high Q value of described medium dielectric constant microwave medium microwave dielectric ceramic materials.
The present invention who adopts above-mentioned prescription and technology to form is through SrCO 3Part replaces CaCO 3, guaranteeing effectively to have improved specific inductivity under the bigger situation of Qf value; Pass through Y 2O 3Part replaces Sm 2O 3, can effectively improve the Q value; The introducing that oxide compound BO is an amount of can effectively improve the Q value and be lowered into the burning temperature; The present invention can obtain ε r=42～50, the Qf value is 30000～40000 GHz, temperature coefficient of resonance frequency is adjustable (10≤Tf≤+ 10ppm) microwave dielectric ceramic materials.Through starting material are heat-treated, can effectively improve powder purity in the technology of the present invention, reach the purpose that improves the Qf value with active; This material technology process is easy to control, and favorable reproducibility is applicable to scale operation.
Description of drawings
Fig. 1 is the SEM figure of embodiment 4 obtained porcelain body sections.
Embodiment
Below in conjunction with specific embodiment the present invention is described further.
At first with starting material CaCO 3, SrCO 3, TiO 2, Sm 2O 3, Y 2O 3And Al 2O 3Heat-treated 2 hours at 400 ℃～1000 ℃.
Secondly with CaCO 3, SrCO 3, TiO 2Press Ca aSr 1-aTiO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1100～1200 ℃, and pre-burning is 3 hours in the air atmosphere, synthetic Ca aSr 1-aTiO 3With Sm 2O 3, Y 2O 3And Al 2O 3Press Sm bY (1-b)AlO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1150～1300 ℃, and pre-burning is 3 hours in the air atmosphere, synthetic Sm bY (1-b)AlO 3
Then with synthetic Ca aSr 1-aTiO 3, Sm bY (1-b)AlO 3Press the described prescription second batch of claim 1 with starting material BO, mixed 18～30 hours, obtain porcelain after the oven dry with the wet ball-milling method.Add the granulation of 5wt% Z 150PH (PVA) tackiness agent to this porcelain; Press down at 5MPa pressure and to process diameter 20mm, the disk of thickness 11～13mm is at 1400～1500 ℃; Sintering is 3～8 hours in the air atmosphere, obtains the high Q value of medium dielectric constant microwave medium microwave dielectric ceramic materials.
Table 1 shows and constitutes prescription composition of the present invention, and table 2 shows corresponding processing condition and dielectric properties.
Table 1 prescription is formed
Figure 828747DEST_PATH_IMAGE002
Table 2 processing condition and dielectric properties
Numbering Thermal treatment temp (℃) One-tenth burning temperature (℃) ε r Qf Tf
1 400 1500 42.5 42000 -1.7
2 400 1500 42.6 41200 -2.1
3 400 1500 43.1 40200 0.1
4 600 1480 44.5 40000 1.1
5 600 1480 45.2 39600 2.5
6 600 1480 45.8 39000 3.0
7 800 1450 47.5 34600 4.1
8 800 1480 46.8 38200 3.5
9 800 1450 47.0 35800 3.8
10 800 1450 47.1 34800 3.6
11 1000 1450 47.3 33000 3.5
12 1000 1450 47.7 33900 3.8
(result is as shown in Figure 1 for scanning electron microscope, the SEM) microscopic appearance of observation embodiment 4 porcelain body sections with sem.As can be seen from the figure, the porcelain body section is fine and close, and the existence of a small amount of small pore is only arranged, and meets the fine and close characteristic of high Q material porcelain body.
The foregoing description has been illustrated technical conceive of the present invention and characteristics, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change and modify, and all should be encompassed within protection scope of the present invention.

Claims (4)

1. the high Q value of a medium dielectric constant microwave medium microwave-medium ceramics is characterized in that the composition of raw materials expression formula of this microwave-medium ceramics is: xCa aSr 1-aTiO 3+ (1-x) Sm bY (1-b)AlO 3+ ywt%BO; Wherein,
0.6≤x≤0.8；
0.01≤a≤0.3；
0.4≤b≤1；
0≤y≤3, y is for accounting for xCaTi aO 3+ (1-x) Sm bY (1-b)AlO 3Mass percent;
Said BO is MnO 2, WO 3, CeO 2, Nb 2O 5, TiO 2, Fe 2O 3, Ta 2O 3In one or more mix.
2. the high Q value of a kind of medium dielectric constant microwave medium according to claim 1 microwave-medium ceramics is characterized in that 0.68≤x≤0.75 in the composition of raw materials of this microwave-medium ceramics; 0.01≤a≤0.2; 0.6≤b≤0.9; 0≤y≤1.
3. the high Q value of a kind of medium dielectric constant microwave medium according to claim 2 microwave-medium ceramics is characterized in that 0.01≤a≤0.05 in the composition of raw materials of this microwave-medium ceramics; 0.6≤b≤0.8; 0≤y≤0.7.
4. preparation method who prepares like claim 1 or the high Q value of 2 or 3 described medium dielectric constant microwave medium microwave-medium ceramics is characterized in that this method is successively as follows:
1) with starting material CaCO 3, SrCO 3, TiO 2, Sm 2O 3, Y 2O 3And Al 2O 3Heat-treated 2 hours at 400 ℃～1000 ℃;
2) with CaCO 3, SrCO 3, TiO 2Press Ca aSr 1-aTiO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1100～1200 ℃, and pre-burning is 2.5～3.5 hours in the air atmosphere, synthetic Ca aSr 1-aTiO 3
3) with Sm 2O 3, Y 2O 3And Al 2O 3Press Sm bY (1-b)AlO 3The chemical formula batching, the wet ball-milling method was mixed 18～30 hours, and the oven dry back is at 1150～1300 ℃, and pre-burning is 2.5～3.5 hours in the air atmosphere, synthetic Sm bY (1-b)AlO 3
4) with synthetic Ca aSr 1-aTiO 3, Sm bY (1-b)AlO 3Press described prescription second batch with starting material BO, mixed 18～30 hours, obtain porcelain after the oven dry with the wet ball-milling method; Add the granulation of 5wt% poly (vinyl alcohol) binder to this porcelain, at 4～6MPa pressure pressed disk, at 1400～1500 ℃, sintering is 3～8 hours in the air atmosphere, obtains the high Q value of described medium dielectric constant microwave medium microwave dielectric ceramic materials.
CN201110457150.1A 2011-12-31 2011-12-31 Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof Active CN102531581B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110457150.1A CN102531581B (en) 2011-12-31 2011-12-31 Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110457150.1A CN102531581B (en) 2011-12-31 2011-12-31 Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102531581A true CN102531581A (en) 2012-07-04
CN102531581B CN102531581B (en) 2014-06-11

Family

ID=46339778

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110457150.1A Active CN102531581B (en) 2011-12-31 2011-12-31 Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102531581B (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104211397A (en) * 2014-09-16 2014-12-17 桂林理工大学 Temperature stable type microwave dielectric ceramic Nb2VY3O12 with ultralow dielectric constant
CN104211391A (en) * 2014-09-27 2014-12-17 桂林理工大学 Low-temperature sintering temperature-stable medium dielectric constant microwave dielectric ceramic Bi3La5Ti7O26 and preparation method thereof
CN104311029A (en) * 2014-09-27 2015-01-28 桂林理工大学 Temperature-stable type microwave dielectric ceramic Bi<2>La<4>Ti<5>O19 having middle dielectric constant
CN105198428A (en) * 2015-09-07 2015-12-30 桂林理工大学 Ultralow-dielectric constant microwave dielectric ceramic Sm2YV3O12 with high thermal stability and low loss
CN105198430A (en) * 2015-09-08 2015-12-30 桂林理工大学 High-quality factor ultralow-dielectric constant microwave dielectric ceramic CeYV2O8
CN105198427A (en) * 2015-09-07 2015-12-30 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic Ce2YV3O12
CN105198431A (en) * 2015-09-08 2015-12-30 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic La2YV3O12
CN105399422A (en) * 2015-12-15 2016-03-16 广东国华新材料科技股份有限公司 STLA microwave dielectric ceramic material and preparation method and application thereof
CN110734284A (en) * 2019-11-11 2020-01-31 深圳顺络电子股份有限公司 medium high Q microwave medium ceramic material and preparation method thereof
CN110790576A (en) * 2019-11-29 2020-02-14 广东风华高新科技股份有限公司 Microwave ceramic powder material and preparation method thereof
CN111377706A (en) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 Microwave dielectric ceramic material, dielectric ceramic block and microwave communication equipment
CN111384517A (en) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 Dielectric filter, communication equipment, dielectric resonator and preparation method
CN111517779A (en) * 2019-02-03 2020-08-11 苏州艾福电子通讯股份有限公司 Improved microwave dielectric ceramic powder and preparation method and application thereof
CN112759382A (en) * 2021-01-17 2021-05-07 苏州研资工业技术有限公司 Microwave dielectric ceramic and preparation method thereof
CN113773070A (en) * 2021-09-14 2021-12-10 天津大学 Temperature-stable high-dielectric-constant microwave dielectric ceramic material and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process
CN1626475A (en) * 2002-09-27 2005-06-15 广东风华高新科技集团有限公司 Anti reductive powder of media ceramics and preparation method, as well as method in use for preparing ceramic capacitor in multiple layers
CN101786879A (en) * 2010-01-05 2010-07-28 湖北大学 Low-loss microwave medium ceramic with complex-phase structure and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1626475A (en) * 2002-09-27 2005-06-15 广东风华高新科技集团有限公司 Anti reductive powder of media ceramics and preparation method, as well as method in use for preparing ceramic capacitor in multiple layers
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process
CN101786879A (en) * 2010-01-05 2010-07-28 湖北大学 Low-loss microwave medium ceramic with complex-phase structure and preparation method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
《Journal of the European Ceramic Society》 20061218 Eung Soo Kim et al. Effects of structural characteristics on microwave dielectric properties of (1-x)Ca0.85Nd0.1TiO3-xLnAlO3 (Ln = Sm, Er and Dy) ceramics 第3006页左栏第3段，第3010页左栏第1段 1-4 第27卷, *
EUNG SOO KIM ET AL.: "Effects of structural characteristics on microwave dielectric properties of (1-x)Ca0.85Nd0.1TiO3–xLnAlO3 (Ln = Sm, Er and Dy) ceramics", 《JOURNAL OF THE EUROPEAN CERAMIC SOCIETY》, vol. 27, 18 December 2006 (2006-12-18) *
姚义俊等: "掺杂Y2O3，Sm2O3对氧化铝瓷介电性能的影响", 《材料科学与工程学报》, vol. 27, no. 4, 31 August 2009 (2009-08-31) *

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104211397A (en) * 2014-09-16 2014-12-17 桂林理工大学 Temperature stable type microwave dielectric ceramic Nb2VY3O12 with ultralow dielectric constant
CN104211397B (en) * 2014-09-16 2016-04-06 桂林理工大学 Temperature-stable ultralow dielectric microwave dielectric ceramic Nb 2vY 3o 12
CN104211391B (en) * 2014-09-27 2016-04-06 桂林理工大学 Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic Bi 3la 5ti 7o 26
CN104211391A (en) * 2014-09-27 2014-12-17 桂林理工大学 Low-temperature sintering temperature-stable medium dielectric constant microwave dielectric ceramic Bi3La5Ti7O26 and preparation method thereof
CN104311029A (en) * 2014-09-27 2015-01-28 桂林理工大学 Temperature-stable type microwave dielectric ceramic Bi<2>La<4>Ti<5>O19 having middle dielectric constant
CN105198428A (en) * 2015-09-07 2015-12-30 桂林理工大学 Ultralow-dielectric constant microwave dielectric ceramic Sm2YV3O12 with high thermal stability and low loss
CN105198427A (en) * 2015-09-07 2015-12-30 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic Ce2YV3O12
CN105198430A (en) * 2015-09-08 2015-12-30 桂林理工大学 High-quality factor ultralow-dielectric constant microwave dielectric ceramic CeYV2O8
CN105198431A (en) * 2015-09-08 2015-12-30 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic La2YV3O12
CN105399422A (en) * 2015-12-15 2016-03-16 广东国华新材料科技股份有限公司 STLA microwave dielectric ceramic material and preparation method and application thereof
CN111377706A (en) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 Microwave dielectric ceramic material, dielectric ceramic block and microwave communication equipment
CN111384517A (en) * 2018-12-31 2020-07-07 深圳市大富科技股份有限公司 Dielectric filter, communication equipment, dielectric resonator and preparation method
CN111517779A (en) * 2019-02-03 2020-08-11 苏州艾福电子通讯股份有限公司 Improved microwave dielectric ceramic powder and preparation method and application thereof
CN110734284A (en) * 2019-11-11 2020-01-31 深圳顺络电子股份有限公司 medium high Q microwave medium ceramic material and preparation method thereof
CN110790576A (en) * 2019-11-29 2020-02-14 广东风华高新科技股份有限公司 Microwave ceramic powder material and preparation method thereof
CN112759382A (en) * 2021-01-17 2021-05-07 苏州研资工业技术有限公司 Microwave dielectric ceramic and preparation method thereof
CN113773070A (en) * 2021-09-14 2021-12-10 天津大学 Temperature-stable high-dielectric-constant microwave dielectric ceramic material and preparation method thereof
CN113773070B (en) * 2021-09-14 2023-03-10 天津大学 Temperature-stable high-dielectric-constant microwave dielectric ceramic material and preparation method thereof

Also Published As

Publication number Publication date
CN102531581B (en) 2014-06-11

Similar Documents

Publication Publication Date Title
CN102531581B (en) Microwave dielectric ceramic with intermediate dielectric constant and high Q value and preparation method thereof
CN111825441B (en) Garnet ferrite material with high dielectric constant and high saturation magnetization, and preparation method and application thereof
CN103351160A (en) Microwave dielectric ceramic and preparation method thereof
CN101830697A (en) Medium-temperature sintered high-Q medium microwave ceramics and preparation method thereof
CN108863322A (en) A kind of low dielectric microwave media ceramic and preparation method thereof
CN109231967A (en) Bi2O3-B2O3Binary system microwave dielectric ceramic materials and preparation method thereof
CN113896530B (en) Modified NiO-Ta with stable temperature 2 O 5 Microwave-based dielectric ceramic material and preparation method thereof
CN105693235B (en) High dielectric microwave medium ceramic material and preparation method thereof
CN105198423A (en) Sr-La-Al-based microwave dielectric ceramic material and preparation method thereof
JP5812035B2 (en) Dielectric ceramic composition, dielectric ceramic and electronic component
CN107382314A (en) A kind of microwave-medium ceramics of barium base complex perovskite structure
CN102887708A (en) Microwave dielectric ceramic NaCa2(Mg1-xZnx)2V3O12 capable of sintering at low temperature and preparation method
CN108409325A (en) A kind of the high q-factor microwave dielectric ceramic materials preparation process and product of sintered at ultra low temperature
CN108793994A (en) A kind of donor doping microwave dielectric ceramic with medium dielectric constant and preparation method thereof
CN109354495A (en) Magnesium zirconium niobium antimony series microwave dielectric ceramic and preparation method and application
CN113072373A (en) Temperature-stable low-dielectric ceramic material suitable for 5G millimeter wave communication application and preparation method thereof
CN113248265A (en) Material for laminated high-frequency inductor and preparation method thereof
CN110627480B (en) MgO-Al2O3-GeO2Preparation method of ternary system microwave dielectric material
CN112794368A (en) Composite material with high magnetic permeability and low dielectric constant as well as preparation method and application thereof
CN103803971B (en) High-dielectric-constant microwave dielectric ceramic and preparation method thereof
CN112759383A (en) Microwave dielectric ceramic with medium dielectric constant and preparation method thereof
CN101734907B (en) Transition element doped barium-strontium titanate based composite ceramic and preparation method thereof
CN112266238A (en) Low dielectric constant ceramic material for microwave device and preparation method thereof
CN112898021B (en) Low-temperature sintered microwave dielectric material Mg2-xCoxV2O7And method for preparing the same
CN114804867B (en) Ceramic dielectric material suitable for hot-pressing sintering, ceramic device and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: 314003 Jiaxing City, Zhejiang Province Economic Development Zone Yong Wui street is the original Road No. 66

Patentee after: Jiaxing Jiali Electronic Co., Ltd.

Address before: 314003 Jiaxing Economic Development Zone, Tong Tong Street is the original road, No. 66, No.

Patentee before: Jiaxing Jiali Electronic Co., Ltd.